A method of manufacturing a semiconductor device using a scanner, wherein the scanner is capable of realizing a minimum pitch, wherein the minimum pitch is the smallest possible pitch for the scanner, the method including providing a semiconductor substrate, forming a first layer over the semiconductor substrate, forming a second layer over the first layer, patterning the second layer to form a plurality of second layer patterns, patterning the first layer to form a plurality of first layer patterns, performing a tone reversal to form a reversed tone for the second layer patterns, and etching the first layer patterns using the reversed tone as a mask, wherein the etched first layer patterns have a final pitch size, and wherein the final pitch is smaller than the minimum pitch.