45 results about "Electro-absorption modulator" patented technology

The invention discloses a preparation method and a structure of a photonic integrated device, and the method comprises the steps: sequentially dividing a substrate into a front modulator region, a rear modulator region, a front grating region, a gain region and a rear grating region, and growing a first active layer after manufacturing a selected region epitaxial mask pattern in the gain region, the method comprises the following steps of: growing a first active layer in a front modulator region after mask etching operation, growing a second active layer in a front modulator region after mask etching operation, growing a third active layer in a grating region after mask etching operation, finally performing grating manufacturing, and completing manufacturing of a cladding layer, an electric contact layer, an inverted table shallow ridge waveguide structure, an electric isolation trench and an electrode. According to the method, integration of multiple materials is achieved through one-time selective area epitaxial growth and one-time butt joint growth, the material growth frequency is reduced, and the manufacturing cost is saved; the gain region and the rear modulator region realize forbidden band width offset through selective region epitaxial material growth, and multi-wavelength tuning and efficient modulation are realized through fluorescence wavelength difference design of each region, so that a solution can be provided for integration of a wide-wavelength tunable laser and a double-electro-absorption modulator.

The invention discloses a preparation method and structure of a photon integrated laser, and the method comprises the steps: dividing a device into seven functional regions, including two modulator regions, two gain regions, two front grating regions and a common rear grating region; an active material of a modulator region and a passive material of a grating region are respectively formed through two times of butt-joint growth; after sampling gratings are manufactured in the front grating area and the rear grating area, a cladding layer, a contact layer and a ridge waveguide structure grow, cantilever beam heat insulation structures are formed on the two sides of the ridge waveguide of the shared grating area, and finally electrodes of the rear functional areas are manufactured. Wavelength tuning of the two lasers is achieved by sharing the rear grating area, and the size of the lasers is effectively reduced; the cantilever beam structure of the rear grating area is utilized to effectively reduce heat conduction, improve wavelength tuning efficiency and reduce power consumption; through the double-end integrated electro-absorption modulator, bidirectional light emission of a single integrated chip is realized, signal modulation of different bidirectional light emission wavelengths can be carried out, and the utilization rate of optical fiber transmission is improved.

An electro-optical integrated circuit comprising an optical transmitter and an optical receiver is disclosed in which a monolithically integrated electro-absorption modulated laser (EML) can operate bi-directionally in both transmitter and receiver modes. Vertically stacked waveguides for lasers and electro-absorption modulators (EAMs) are provided. The laser and the EAM are optically coupled through a transverse conical vertical optical coupler. The EML includes monolithically integrated electronic circuitry, such as drivers and control electronics for driving the laser as the EML and the EAM in the transmitter mode. The control circuit includes a transimpedance amplifier (TIA). The EAM has a first portion and a second portion that may be independently biased. In receiver mode, the laser current is reduced near a threshold, a first portion of the EAM is biased to absorb residual laser light, while a second portion of the EAM provides photocurrent to the TIA as a photodiode receiver.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

The present disclosure relates to a monolithically integrated dual-wavelength transmitter for a passive optical network (PON), which may be suitable for both a gigabit PON (GPON) and a 10-gigabit-PON (XG-PON). The integrated transmitter includes two distributed feedback (DFB) lasers, a first DFB laser to emit a continuous first laser beam at a first wavelength along an optical path, and a second DFB laser to emit a modulated second laser beam at a second wavelength along the optical path in the same direction as the first DFB laser. The transmitter also includes an electro-absorption modulator (EAM) after the first DFB laser in the optical path, which is configured to modulate the first laser beam, and a distributed Bragg reflector (DBR) between the EAM and the second DFB laser in the optical path, which is configured to transmit light at the first wavelength

The application discloses a phase-sensitive pre-amplification method based on an electro-absorption modulated laser, and is applied to a star-ground laser communication system receiving end. A distributed feedback laser in the electro-absorption modulated laser amplifies weak pump light after long distance transmission, and generates idler light under the nonlinear effect of a laser cavity; an electro-absorption modulator in the electro-absorption modulated laser detects phase error information between signal light, pump light and idler light, and constructs an optical injection phase-locked loop through a feedback loop, so that stable control of the three-wave phase relationship is realized. Under the phase stability condition, the output light of the electro-absorption modulated laser is fed into a later-stage nonlinear medium to complete phase-sensitive pre-amplification. The phase-sensitive pre-amplification method based on the electro-absorption modulated laser has the advantages of simple structure and easy integration, can realize pump light amplification, idler light generation and phase error suppression under the condition of weak pump light, and effectively improves the receiving sensitivity performance of the star-ground laser communication system.

This invention discloses a method and structure for fabricating a photonic integrated device. The method includes: dividing a substrate sequentially into a pre-modulator region, a post-modulator region, a pre-grating region, a gain region, and a post-grating region; growing a first active layer after fabricating a selected-area epitaxial mask pattern in the gain region; growing a second active layer in the pre-modulator region after mask etching; growing a third active layer in the grating region after mask etching; finally, fabricating the grating; and completing the fabrication of the cladding, electrical contact layer, inverted shallow ridge waveguide structure, electrical isolation trench, and electrodes. This method achieves the integration of multiple materials through a single selected-area epitaxial growth and a single docking growth, saving material growth steps and reducing manufacturing costs. The gain region and post-modulator region achieve bandgap shift through selected-area epitaxial material growth, and the design of photofluorescence wavelength differences in each region enables multi-wavelength tuning and efficient modulation, providing a solution for the integration of wide-wavelength tunable lasers and dual-electric absorption modulators.

The invention provides an electro-absorption modulator and an optical semiconductor device which are excellent in high extinction ratio characteristics and high-speed operation. The electro-absorption modulator includes: a semi-insulating semiconductor layer; a first electro-absorption modulator section including a first n-type semiconductor layer, a first absorption layer, and a first p-type semiconductor layer; a second electro-absorption modulator section including a second p-type semiconductor layer, a second absorption layer, and a second n-type semiconductor layer; a connection waveguide layer disposed between the first absorption layer and the second absorption layer; a first EA electrode electrically connected to the first p-type semiconductor layer and electrically connected to the outside; a second EA electrode electrically connected to the second n-type semiconductor layer and electrically connected to the outside; and a connection medium configured to electrically connect the first n-type semiconductor layer and the second p-type semiconductor layer to each other.

The invention discloses an EML COC device and a manufacturing method thereof.The EML COC device comprises a carrier substrate and an EML laser chip, and the upper surface of the carrier substrate is provided with a high-frequency positive electrode wire, a high-frequency negative electrode wire, a reference GND wire, a laser positive electrode bonding pad, a first resistor auxiliary disc and a second resistor auxiliary disc; the first resistor auxiliary disc is connected with the high-frequency cathode wire through a first resistor, the second resistor auxiliary disc is connected with the high-frequency anode wire through a second resistor, the EML laser chip comprises a chip substrate, the chip substrate is provided with an electro-absorption modulator anode, an electro-absorption modulator cathode, a laser anode and a laser cathode, and the electro-absorption modulator anode is connected with the electro-absorption modulator cathode. The EML laser chip is welded to the upper surface of the carrier substrate, the positive electrode of the electro-absorption modulator is electrically connected with the high-frequency positive electrode wire, the negative electrode of the electro-absorption modulator is electrically connected with the high-frequency negative electrode wire, the positive electrode of the laser is electrically connected with the laser positive electrode bonding pad, and the negative electrode of the laser is electrically connected with the reference GND wire.

The present invention discloses a quantum dot electro-absorption modulator and its fabrication method. The electro-absorption modulator comprises, from bottom to top, an N-contact electrode layer, an InP substrate, an InP buffer layer, an InGaAsP lower confinement layer, a multi-periodic InAs quantum dot active layer, an InGaAsP upper confinement layer, an InP spacer layer, an InP cap layer, an InGaAs contact layer, and a P-contact electrode layer. InP semi-insulating layers are disposed on either side of the InP buffer layer, the InGaAsP lower confinement layer, and the multi-periodic InAs quantum dot active layer; InP barrier layers are disposed on either side of the InGaAsP upper confinement layer and the InP spacer layer; and BCB layers are disposed on either side of the P electrode. The electro-absorption modulator of the present invention can achieve a higher extinction ratio at a lower bias voltage while increasing its bandwidth.

An electro-absorption modulator 100 including a quantum well 102 configured to provide a variable electromagnetic absorption spectrum in response to an applied electric field, wherein the quantum well is a type-II quantum well comprising two material layers, each material layer having a graded material composition, such that the potential in each material layer varies as a function of position.

The utility model relates to a high-speed substrate for an electro-absorption modulator, which comprises a composite substrate, a radio frequency electrode is arranged on one side above the composite substrate, and the radio frequency electrode is connected with an electrode of the electro-absorption modulator through a gold wire; a resistance region is arranged on the other side above the composite substrate, and the resistance region comprises a first lead region and at least one resistance unit; wherein each resistor unit comprises a thin-film resistor and a second lead area; the resistor units are connected end to end, and the thin-film resistor of the resistor unit located in the head area is connected with the first lead area. According to the utility model, through the reasonable layout of the radio frequency electrode and the resistance region, various matching resistors required by the electro-absorption modulator can be simply and efficiently met, and the cost and period of product development are obviously reduced.

The application relates to a semiconductor chip and a manufacturing method thereof, which comprises a chip substrate 1 and an electro-absorption modulator EAM 2 arranged on the chip substrate 1; the electro-absorption modulator EAM 2 comprises a first substrate 201, a support column 202, a first active region 203 and a first upper waveguide region 204 arranged in sequence from bottom to top; the width of the support column 202 and the width of the first upper waveguide region 204 are both smaller than the width of the first active region 203. The application can effectively inhibit the deterioration of the sidewall to the electrical and optical properties, improve the bandwidth of the chip, reduce the interface dark current and defects, reduce the light loss of the chip and improve the light output power of the chip under the condition of reducing the reverse PN junction area.

Apparatus is disclosed for generating and modulating the power of a laser beam to be transmitted in an optical communication fiber. The apparatus includes a laser source and an electro-absorption modulator located on a common insulating or semi-insulating substrate. The laser source generates the laser beam. A high- frequency electrical signal encodes data to be transmitted by the modulated laser beam. The modulator is differentially driven by the electrical signal, which is terminated on the common substrate to minimize cross talk with other data channels. Traveling-wave electrodes connecting segments of the modulator and a termination network maintain electrical signal integrity and minimize losses.

The invention discloses a hybrid waveguide high-rate EML chip structure and a preparation method, and relates to the technical field of chips. The device specifically comprises a DFB laser and an EA electro-absorption modulator, the DFB laser is provided with a shallow ridge waveguide structure, the EA electro-absorption modulator is provided with a deep ridge waveguide structure, and the shallow ridge waveguide structure and the deep ridge waveguide structure jointly form a hybrid waveguide structure. According to the invention, a hybrid waveguide technology is adopted, and a high-power and high-reliability DFB discrete device and a low-capacitance, low-resistance and high-response-frequency EA analysis device can be obtained through the structural design of DFB shallow ridges and EA deep ridges, so that the effect of improving the modulation rate of an EML laser is achieved.

The present disclosure relates to thermal control systems, photonic memory fabrics, and electro-absorption modulators (EAMs). For example, the thermal control systems efficiently move data in a memory fabric based on utilizing and controlling thermally controlling optical components. As another example, the EAMs are instances of optical modulators used to efficiently move data within digital circuits while maintaining thermally-stable optical modulation across a wide temperature range.

The present invention relates to an electro-absorption modulated laser (EML) diode including a laser diode formed on one side of a substrate, an electro-absorption modulator (EAM) formed on the other side of the substrate, and an anti-parallel (AP) diode integrated with a bias and a radio frequency (RF) feeding line at a front stage of the EAM.

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provide an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. The EML may comprise monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

An optical modulation and amplification apparatus, an optical module, an optical network unit, and an optical communication system are provided. The optical modulation and amplification apparatus includes an electric absorption modulator and a semiconductor optical amplifier. The electric absorption modulator and the semiconductor optical amplifier share a same substrate and a same multi-layer material structure. The multi-layer material structure includes, from bottom to top, at least a first quantum well, an electron blocking layer, a second quantum well, and an upper separate confinement layer. The electric absorption modulator is configured to modulate injection light by using the first quantum well, and the semiconductor optical amplifier is configured to amplify the injection light by using the second quantum well.

According to the present invention, a Fabry-Perot laser (1) and an electro-absorption modulator (2) are formed on a semiconductor substrate (9). The Fabry-Perot laser (1) has an active layer (11), and generates laser light. The electro-absorption modulator (2) has an absorption layer (14) connected to the active layer (11), and modulates the laser light. At a connection portion (3) formed by the Fabry-Perot laser (1) and the electro-absorption modulator (2), the mesa width sharply changes from that of the Fabry-Perot laser (1) to that of the electro-absorption modulator (2).

A photonic integrated circuit (PIC) includes an integrated on-chip electro-absorption modulator (EAM) having a first electrode and a second electrode, the first electrode and second electrode including an anode and a cathode. The PIC includes at least a first biasing network electrically coupled to the first electrode for providing termination and biasing to the EAM. The first biasing network includes at least a first inductor formed on the PIC.

This invention discloses a method and structure for fabricating an integrated device. The method includes: dividing a substrate into a pre-modulator region, a post-modulator region, a pre-grating region, a gain region, and a post-grating region; fabricating a selected-area epitaxial mask pattern in the gain region, growing an AlInGaAs active layer in the region outside the mask pattern, and modulating the quantum well photofluorescence wavelength so that the wavelength of the modulator region is shorter than that of the gain region; removing the selected-area epitaxial mask pattern, and using quantum well hybridization technology to precisely control the quantum well photofluorescence wavelength of the pre-modulator region; growing an InGaAsP passive layer in the grating region using passive material bonding technology, and fabricating a sampling grating; finally forming a cladding layer, an electrical contact layer, and electrodes to achieve electrical isolation. This method solves the problem of integrating wide-wavelength tunable range with electrically absorbed modulator materials, simplifies the manufacturing process, reduces production costs, and provides a new solution for optical emission chips in optical communication and data center optical interconnects.

Apparatus is disclosed for generating and modulating the power of a laser beam to be transmitted in an optical communication fiber. The apparatus includes a laser source and an electro-absorption modulator located on a common insulating or semi-insulating substrate. The laser source generates the laser beam. A high- frequency electrical signal encodes data to be transmitted by the modulated laser beam. The modulator is differentially driven by the electrical signal, which is terminated on the common substrate to minimize cross talk with other data channels. Traveling-wave electrodes connecting segments of the modulator and a termination network maintain electrical signal integrity and minimize losses.

An electro-optic device comprising a waveguide (WG)-device configured as an electro-absorption modulator (EAM) and electronics comprising an EAM driver. The electro-optic device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate comprising a first plurality of semiconductor layers forming InP heterojunction bipolar transistors of the electronics and a second plurality of semiconductor layers structured to form a PIN waveguide of the EAM, the PIN waveguide comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; and at least one of the n-layer structure and the p-layer structure comprises a mode extending layer.

This invention relates to a 2.5D / 3D optoelectronic co-packaged device based on an electro-absorption modulator and its fabrication method, including a germanium-silicon electro-absorption modulator (1). This invention achieves a high-speed, high-bandwidth, and small-volume 2.5D / 3D optical engine for optical I / O using a TSV active silicon interposer board through optical interconnect architecture design for high-performance computing, expansion of single-fiber channel count using wavelength division multiplexing (WDM) technology, design of a high-performance germanium-silicon electro-absorption modulator that operates stably under multiple wavelengths, and development of an active interposer board process with high-quality selective epitaxial growth of single-crystal germanium-silicon material.

The invention discloses a preparation method and structure of an integrated device. The method comprises the following steps: dividing a substrate into a front modulator region, a rear modulator region, a front grating region, a gain region and a rear grating region; a selective area epitaxial mask pattern is manufactured in the gain area, an AlInGaAs active layer is grown in the area outside the mask pattern, the fluorescence wavelength of quantum well light is regulated and controlled, and the wavelength of the modulator area is made to be shorter than that of the gain area; removing a selective area epitaxial mask pattern, and accurately controlling the fluorescence wavelength of quantum well light in a front modulator area by using a quantum well hybrid technology; growing an InGaAsP passive layer in a grating region by using a passive material docking technology, and manufacturing a sampling grating; and finally, forming a cladding, an electric contact layer and an electrode to realize electric isolation. According to the method, the problem of integration of a wide wavelength tunable range and an electric absorption modulator material is solved, the manufacturing process is simplified, the production cost is reduced, and a new optical emission chip solution is provided for optical communication and data center optical interconnection.

The invention discloses a frequency agility broadband chirp signal generating device. After laser generated by a distributed feedback semiconductor laser passes through an optical splitter, a first optical path is subjected to fundamental frequency signal carrier suppression single side band modulation through two Mach-Zehnder modulators which are connected in parallel and then is subjected to light amplification and light splitting; the second optical path generates an optical frequency comb through the cascaded electro-absorption modulator, the frequency modulator and the electro-absorption modulator and then carries out wave division; an optical signal split by the first optical path and an optical signal split by the second optical path are respectively coupled and then are sent to an optical switch to realize optical signal agility, through photoelectric conversion and an emission antenna, generation of a large-span frequency agility broadband chirp signal is realized, and a high frequency band can reach a W wave band.

Apparatus is disclosed for generating and modulating the power of a laser beam to be transmitted in an optical communication fiber. The apparatus includes a laser source and an electro-absorption modulator located on a common insulating or semi-insulating substrate. The laser source generates the laser beam. A high-frequency electrical signal encodes data to be transmitted by the modulated laser beam. The modulator is differentially driven by the electrical signal, which is terminated on the common substrate to minimize cross talk with other data channels. Traveling-wave electrodes connecting segments of the modulator and a termination network maintain electrical signal integrity and minimize losses.

An electro-absorption modulator includes an optical waveguide element, a first microstrip line, a second microstrip line, and a termination resistor. The optical waveguide element includes an optical channel configured to transmit an optical wave. The first microstrip line is disposed on an upper surface of the optical waveguide element and connected to a microwave signal source to feed-in a microwave signal. The second microstrip line is disposed on the upper surface of the optical waveguide element and spaced from the first microstrip line. The termination resistor is connected to the second microstrip line. An electro-absorption modulated laser module including the electro-absorption modulator is also disclosed.