29 results about "Electro-absorption modulator" patented technology

The invention discloses a preparation method and structure of a photon integrated laser, and the method comprises the steps: dividing a device into seven functional regions, including two modulator regions, two gain regions, two front grating regions and a common rear grating region; an active material of a modulator region and a passive material of a grating region are respectively formed through two times of butt-joint growth; after sampling gratings are manufactured in the front grating area and the rear grating area, a cladding layer, a contact layer and a ridge waveguide structure grow, cantilever beam heat insulation structures are formed on the two sides of the ridge waveguide of the shared grating area, and finally electrodes of the rear functional areas are manufactured. Wavelength tuning of the two lasers is achieved by sharing the rear grating area, and the size of the lasers is effectively reduced; the cantilever beam structure of the rear grating area is utilized to effectively reduce heat conduction, improve wavelength tuning efficiency and reduce power consumption; through the double-end integrated electro-absorption modulator, bidirectional light emission of a single integrated chip is realized, signal modulation of different bidirectional light emission wavelengths can be carried out, and the utilization rate of optical fiber transmission is improved.

An electro-optical integrated circuit comprising an optical transmitter and an optical receiver is disclosed in which a monolithically integrated electro-absorption modulated laser (EML) can operate bi-directionally in both transmitter and receiver modes. Vertically stacked waveguides for lasers and electro-absorption modulators (EAMs) are provided. The laser and the EAM are optically coupled through a transverse conical vertical optical coupler. The EML includes monolithically integrated electronic circuitry, such as drivers and control electronics for driving the laser as the EML and the EAM in the transmitter mode. The control circuit includes a transimpedance amplifier (TIA). The EAM has a first portion and a second portion that may be independently biased. In receiver mode, the laser current is reduced near a threshold, a first portion of the EAM is biased to absorb residual laser light, while a second portion of the EAM provides photocurrent to the TIA as a photodiode receiver.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

The application discloses a phase-sensitive pre-amplification method based on an electro-absorption modulated laser, and is applied to a star-ground laser communication system receiving end. A distributed feedback laser in the electro-absorption modulated laser amplifies weak pump light after long distance transmission, and generates idler light under the nonlinear effect of a laser cavity; an electro-absorption modulator in the electro-absorption modulated laser detects phase error information between signal light, pump light and idler light, and constructs an optical injection phase-locked loop through a feedback loop, so that stable control of the three-wave phase relationship is realized. Under the phase stability condition, the output light of the electro-absorption modulated laser is fed into a later-stage nonlinear medium to complete phase-sensitive pre-amplification. The phase-sensitive pre-amplification method based on the electro-absorption modulated laser has the advantages of simple structure and easy integration, can realize pump light amplification, idler light generation and phase error suppression under the condition of weak pump light, and effectively improves the receiving sensitivity performance of the star-ground laser communication system.

The invention provides an electro-absorption modulator and an optical semiconductor device which are excellent in high extinction ratio characteristics and high-speed operation. The electro-absorption modulator includes: a semi-insulating semiconductor layer; a first electro-absorption modulator section including a first n-type semiconductor layer, a first absorption layer, and a first p-type semiconductor layer; a second electro-absorption modulator section including a second p-type semiconductor layer, a second absorption layer, and a second n-type semiconductor layer; a connection waveguide layer disposed between the first absorption layer and the second absorption layer; a first EA electrode electrically connected to the first p-type semiconductor layer and electrically connected to the outside; a second EA electrode electrically connected to the second n-type semiconductor layer and electrically connected to the outside; and a connection medium configured to electrically connect the first n-type semiconductor layer and the second p-type semiconductor layer to each other.

The invention discloses an EML COC device and a manufacturing method thereof.The EML COC device comprises a carrier substrate and an EML laser chip, and the upper surface of the carrier substrate is provided with a high-frequency positive electrode wire, a high-frequency negative electrode wire, a reference GND wire, a laser positive electrode bonding pad, a first resistor auxiliary disc and a second resistor auxiliary disc; the first resistor auxiliary disc is connected with the high-frequency cathode wire through a first resistor, the second resistor auxiliary disc is connected with the high-frequency anode wire through a second resistor, the EML laser chip comprises a chip substrate, the chip substrate is provided with an electro-absorption modulator anode, an electro-absorption modulator cathode, a laser anode and a laser cathode, and the electro-absorption modulator anode is connected with the electro-absorption modulator cathode. The EML laser chip is welded to the upper surface of the carrier substrate, the positive electrode of the electro-absorption modulator is electrically connected with the high-frequency positive electrode wire, the negative electrode of the electro-absorption modulator is electrically connected with the high-frequency negative electrode wire, the positive electrode of the laser is electrically connected with the laser positive electrode bonding pad, and the negative electrode of the laser is electrically connected with the reference GND wire.

An electro-absorption modulator 100 including a quantum well 102 configured to provide a variable electromagnetic absorption spectrum in response to an applied electric field, wherein the quantum well is a type-II quantum well comprising two material layers, each material layer having a graded material composition, such that the potential in each material layer varies as a function of position.

The application relates to a semiconductor chip and a manufacturing method thereof, which comprises a chip substrate 1 and an electro-absorption modulator EAM 2 arranged on the chip substrate 1; the electro-absorption modulator EAM 2 comprises a first substrate 201, a support column 202, a first active region 203 and a first upper waveguide region 204 arranged in sequence from bottom to top; the width of the support column 202 and the width of the first upper waveguide region 204 are both smaller than the width of the first active region 203. The application can effectively inhibit the deterioration of the sidewall to the electrical and optical properties, improve the bandwidth of the chip, reduce the interface dark current and defects, reduce the light loss of the chip and improve the light output power of the chip under the condition of reducing the reverse PN junction area.

Apparatus is disclosed for generating and modulating the power of a laser beam to be transmitted in an optical communication fiber. The apparatus includes a laser source and an electro-absorption modulator located on a common insulating or semi-insulating substrate. The laser source generates the laser beam. A high- frequency electrical signal encodes data to be transmitted by the modulated laser beam. The modulator is differentially driven by the electrical signal, which is terminated on the common substrate to minimize cross talk with other data channels. Traveling-wave electrodes connecting segments of the modulator and a termination network maintain electrical signal integrity and minimize losses.

The invention discloses a hybrid waveguide high-rate EML chip structure and a preparation method, and relates to the technical field of chips. The device specifically comprises a DFB laser and an EA electro-absorption modulator, the DFB laser is provided with a shallow ridge waveguide structure, the EA electro-absorption modulator is provided with a deep ridge waveguide structure, and the shallow ridge waveguide structure and the deep ridge waveguide structure jointly form a hybrid waveguide structure. According to the invention, a hybrid waveguide technology is adopted, and a high-power and high-reliability DFB discrete device and a low-capacitance, low-resistance and high-response-frequency EA analysis device can be obtained through the structural design of DFB shallow ridges and EA deep ridges, so that the effect of improving the modulation rate of an EML laser is achieved.

The present disclosure relates to thermal control systems, photonic memory fabrics, and electro-absorption modulators (EAMs). For example, the thermal control systems efficiently move data in a memory fabric based on utilizing and controlling thermally controlling optical components. As another example, the EAMs are instances of optical modulators used to efficiently move data within digital circuits while maintaining thermally-stable optical modulation across a wide temperature range.

The present invention relates to an electro-absorption modulated laser (EML) diode including a laser diode formed on one side of a substrate, an electro-absorption modulator (EAM) formed on the other side of the substrate, and an anti-parallel (AP) diode integrated with a bias and a radio frequency (RF) feeding line at a front stage of the EAM.

An optical modulation and amplification apparatus, an optical module, an optical network unit, and an optical communication system are provided. The optical modulation and amplification apparatus includes an electric absorption modulator and a semiconductor optical amplifier. The electric absorption modulator and the semiconductor optical amplifier share a same substrate and a same multi-layer material structure. The multi-layer material structure includes, from bottom to top, at least a first quantum well, an electron blocking layer, a second quantum well, and an upper separate confinement layer. The electric absorption modulator is configured to modulate injection light by using the first quantum well, and the semiconductor optical amplifier is configured to amplify the injection light by using the second quantum well.

An electro-optic device comprising a waveguide (WG)-device configured as an electro-absorption modulator (EAM) and electronics comprising an EAM driver. The electro-optic device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate comprising a first plurality of semiconductor layers forming InP heterojunction bipolar transistors of the electronics and a second plurality of semiconductor layers structured to form a PIN waveguide of the EAM, the PIN waveguide comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; and at least one of the n-layer structure and the p-layer structure comprises a mode extending layer.

The invention discloses a frequency agility broadband chirp signal generating device. After laser generated by a distributed feedback semiconductor laser passes through an optical splitter, a first optical path is subjected to fundamental frequency signal carrier suppression single side band modulation through two Mach-Zehnder modulators which are connected in parallel and then is subjected to light amplification and light splitting; the second optical path generates an optical frequency comb through the cascaded electro-absorption modulator, the frequency modulator and the electro-absorption modulator and then carries out wave division; an optical signal split by the first optical path and an optical signal split by the second optical path are respectively coupled and then are sent to an optical switch to realize optical signal agility, through photoelectric conversion and an emission antenna, generation of a large-span frequency agility broadband chirp signal is realized, and a high frequency band can reach a W wave band.

An electro-absorption modulator includes an optical waveguide element, a first microstrip line, a second microstrip line, and a termination resistor. The optical waveguide element includes an optical channel configured to transmit an optical wave. The first microstrip line is disposed on an upper surface of the optical waveguide element and connected to a microwave signal source to feed-in a microwave signal. The second microstrip line is disposed on the upper surface of the optical waveguide element and spaced from the first microstrip line. The termination resistor is connected to the second microstrip line. An electro-absorption modulated laser module including the electro-absorption modulator is also disclosed.

The invention provides a heterogeneous integrated electro-absorption modulated laser structure and a preparation method thereof, and relates to the technical field of novel semiconductor devices. The structure comprises an electro-absorption modulator, a semiconductor laser and an anti-reflection layer (114), the electro-absorption modulator comprises a substrate (101), a first N-type semiconductor layer (102), a first active region (103), a first P-type semiconductor layer (104) and a first heavily doped semiconductor contact layer (105), wherein the first N-type semiconductor layer (102), the first active region (103), the first P-type semiconductor layer (104) and the first heavily doped semiconductor contact layer (105) are sequentially stacked on the substrate (101); the semiconductor laser comprises a second N-type semiconductor layer (107), a grating layer (108), a second active region (109), a second P-type semiconductor layer (110) and a second heavily doped semiconductor contact layer (111) which are stacked on a substrate (101). An anti-reflection layer (114) is arranged between the electro-absorption modulator and the semiconductor laser; wherein the electro-absorption modulator and the semiconductor laser are respectively and independently prepared on different substrates in advance, and heterogeneous integration is realized through a micro transfer printing technology.

High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.

Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate propagation and modulation of an optical signal therethrough; a segmented structure comprising diode segments disposed on the waveguide; and an electrical transmission line operatively coupled to the diode segments. The electrical transmission line is configured to facilitate propagation of an electrical signal therethrough. The electrical transmission line includes a first transmission line rail and a second transmission line, where a first subset of diode segments is operatively coupled to the first transmission line rail and a ground rail, and a second subset of diode segments is operatively coupled to the second transmission line and the ground rail. The diode segments from the first subset are disposed alternately with the diode segments from the second subset.

Provided is an EA modulator and an EA-DFB laser having a structure for suppressing occurrence of stepping in mounting the EA modulator including a low dielectric constant material between a signal electrode pad and a GND electrode pad. The EA modulator according to the present disclosure is an electro-absorption optical modulator in which a low dielectric constant material is disposed between a signal electrode pad and a GND electrode pad, and the low dielectric constant material includes a notch recessed inward in a direction orthogonal to an optical axis direction.

The present application relates to the technical field of electro-absorption modulation laser, and provides a manufacturing method of electro-absorption modulation laser.In the butt joint growth manufacturing process, the mixing of As and Ga elements in the multi-quantum well layer at the butt joint of the distributed feedback laser and the electro-absorption modulator is realized by sputtering copper, the Cu element is mixed, the concentration of each element at the butt joint interface is balanced, so that the corrosion speed of the chemical solution is balanced, and the butt joint interface state is more flat; in the grating manufacturing step, the nano-imprint etching grating is adopted, the grating precision is high, and the nano-imprint template can be repeatedly used.The embodiment of the present application improves the wet etching butt joint interface state by inducing the mixing of Cu, As and Ga elements; the grating layer is manufactured by adopting the nano-imprint technology, and the grating precision and manufacturing efficiency are improved.

The invention discloses a nonlinear distortion suppression method and device for an optical single-side-band transmitter based on an electro-absorption modulated laser. A digital pre-distortion model containing second-order nonlinearity and intermodulation distortion of a direct modulated laser and an electro-absorption modulator is established in a digital domain; and a cost function is constructed in combination with an actual output spectrum, and a model coefficient is adaptively iteratively updated, so that the optical single-side band signal output by the transmitting end realizes forward compensation on a main nonlinear component before transmission, and the transmission efficiency is improved on the premise that an additional optical device and a complex receiving end balance structure are not required to be increased. According to the optical single-side-band transmitter, nonlinear distortion and intermodulation distortion caused by cascade modulation are effectively suppressed, the linearity and the adjacent channel power ratio of the optical single-side-band signal are remarkably improved, the signal-to-noise ratio and the bit error rate performance of the system are improved, and the transmission capacity and the engineering practicability of the optical single-side-band transmitter in a medium-long-distance high-speed optical interconnection scene are enhanced.

Provided are an electro-absorption modulator and an optical semiconductor device which are excellent in high extinction ratio characteristics and high-speed operation. The electro-absorption modulator includes: a semi-insulating semiconductor layer; a first electro-absorption modulator section including a first n-type semiconductor layer, a first absorption layer, and a first p-type semiconductor layer; a second electro-absorption modulator section including a second p-type semiconductor layer, a second absorption layer, and a second n-type semiconductor layer; a connection waveguide layer arranged between the first absorption layer and the second absorption layer; a first EA electrode electrically connected to the first p-type semiconductor layer and electrically connected to an outside; a second EA electrode electrically connected to the second n-type semiconductor layer and electrically connected to the outside; and a connection medium configured to electrically connect the first n-type semiconductor layer and the second p-type semiconductor layer to each other.

Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate a propagation of an optical signal therethrough; a segmented traveling wave electrode structure comprising electrode segments disposed on the optical waveguide; and an electrical transmission line operatively coupled to the electrode segments via conducting bridges, wherein the electrical transmission line is configured to facilitate a propagation of an electrical signal therethrough, wherein the electrode segments are configured to overcome bandwidth and extinction ratio constraints of a lumped EAM.

The application relates to the technical field of optical communication, and provides a laser chip, which comprises an electro-absorption modulator and a semiconductor optical amplifier, further comprises a reflection grating for reflecting spontaneous emission light of the reflection semiconductor optical amplifier, the semiconductor optical amplifier is arranged on the light-emitting side of the electro-absorption modulator, the reflection grating is arranged in the area where the semiconductor optical amplifier is located, and the reflection grating is arranged close to the area where the electro-absorption modulator is located. A laser chip preparation method is also provided. Through the arrangement of the reflection grating, the spontaneous emission light of the semiconductor optical amplifier can be reflected, optical crosstalk is reduced, and signal quality is improved.

The invention relates to the technical field of high-speed optical communication components and driving circuits, in particular to a stability optimization method based on an electric absorption modulator in a specific bias voltage interval, which comprises the following steps: adjusting a parallel matching resistor of an EAM modulation port from 50 ohm to 70 ohm, and forming a stable working area with TDECQ fluctuation not exceeding 0.5 dB in a bias voltage interval of-1.3 V to-1.6 V. According to the invention, on the premise of not introducing an additional compensation circuit or a signal processing algorithm, the sensitivity of TDECQ to the bias voltage is significantly reduced, and the signal integrity, production consistency and environmental robustness of the light emitting module are improved.

Apparatus is disclosed for generating and modulating the power of a laser beam to be transmitted in an optical communication fiber. The apparatus includes a laser source and an electro-absorption modulator located on a common insulating or semi-insulating substrate. The laser source generates the laser beam. A high- frequency electrical signal encodes data to be transmitted by the modulated laser beam. The modulator is differentially driven by the electrical signal, which is terminated on the common substrate to minimize cross talk with other data channels. Traveling-wave electrodes connecting segments of the modulator and a termination network maintain electrical signal integrity and minimize losses.

A waveguide (WG)-device configured to modulate light and comprising a p type material, an i-type material and an n-type materials (a PIN waveguide), the waveguide device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate structured to form the PIN waveguide, the epitaxial layer stack comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material having an operational wavelength range located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure providing a mode-shaping functionality configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; wherein the mode-shaping functionality includes providing a mode-extending functionality in at least one of the n- layer structure and the p-layer structure.