The invention discloses a
coupling waveguide, a manufacture method thereof and a
semiconductor photoelectronic device applying the
coupling waveguide. The
coupling waveguide comprises a substrate, a lower waveguide cladding, a first waveguide core layer, an isolating layer, a second waveguide core layer and an upper waveguide cladding, wherein the second waveguide core layer is provided with a width transition section of which the transverse width is gradually changed along a
light guide direction. The manufacture method of the coupling waveguide comprises the following steps of: S1. carrying out primary
epitaxy for growing the lower waveguide cladding, the first waveguide core layer, the isolating layer and the second waveguide core layer in order; S2.
processing the second waveguide core layer to form the width transition section; and S3. carrying out secondary
epitaxy for forming the upper waveguide cladding. The
semiconductor photoelectronic device comprises an electroabsorption modulator or a
photodetector; and the transverse widths of the corresponding parts of the second waveguide core layer of the coupling waveguide and the electroabsorption modulator or the
photodetector are gradually narrowed along the
light guide direction. The distribution of all transverse light fields of the coupling waveguide can be adjusted according to the requirement, and thereby the distribution of a light
limiting factor of the device is optimized.