47 results about "Avalanche photodiode" patented technology

An optical sensor includes an integrated circuit including an array of time-to-digital converters and a first array of interconnects connected to the array of time-to-digital converters. A plurality of single photon avalanche photodiode circuits includes a second interconnect. Each of the plurality of single photon avalanche photodiode circuits corresponds to a single pixel. The plurality of single photon avalanche photodiode circuits are individually arranged on the integrated circuit with the second interconnect of the plurality of single photon avalanche photodiode circuits connected to a corresponding one of the first interconnects of the integrated circuit.

The application provides an avalanche photodiode focal plane array pixel gain simulation method and device, the method comprises the following steps: respectively under dark field conditions and light field conditions, a varying bias voltage is applied to an avalanche photodiode focal plane array, and a dark current response curve and a photocurrent response curve of an anode current of a pixel unit in the focal plane array are obtained respectively; under different bias voltages, a signal difference between the dark current response curve and the photocurrent response curve is extracted, and the pixel gain of the pixel unit is determined according to the signal difference. The pixel gain simulation method provided by the application can accurately obtain the pixel gain and is suitable for a silicon-based APD focal plane detector array with different pixel unit structures. In addition, the method can reveal the influence of internal electric field distribution changes caused by factors such as bias voltage on the array gain, thereby providing a theoretical basis and technical path for device optimization design in actual application scenarios.

A distance measurement method which measures a distance by irradiating an object 3 with pulsed light from a pulsed fiber laser device 10, receiving reflected pulsed light of the irradiation pulsed light being reflected by the object, and converting a time interval from projection of the irradiation pulsed light to reception of the reflected pulsed light into a distance, includes detecting the irradiation pulsed light and the reflected pulsed light by an avalanche photodiode 21, calculating a peak value of the irradiation pulsed light based on the detection of the irradiation pulsed light, and controlling the peak value of the irradiation pulsed light to be generated so as to be constant based on the calculated peak value.

A photoelectric conversion device includes an avalanche photodiode, an output holding circuit configured to hold a light reception signal based on an output of the avalanche photodiode, a first logic circuit to which the light reception signal held in the output holding circuit and a first reference signal indicating a first weight amount are input, and a first accumulating circuit configured to hold a first count value obtained by accumulating an output of the first logic circuit. The first accumulating circuit resets the first count value for each first period. The first period is divided into a plurality of second periods. The first weight amount changes for each second period. The output holding circuit resets the light reception signal for each second period.

The application belongs to the technical field of random number generation, and particularly relates to a random signal generation device based on a saturable absorber semiconductor laser. The device comprises a random self-pulsation entropy source, a photodetector and a pulse amplitude quantization module. The random self-pulsation entropy source adopts a saturable absorber semiconductor laser (preferably a DFB-SA structure), generates optical pulses with random amplitudes and stable repetition periods by injecting a driving current in a gain region and applying a reverse bias voltage in an absorption region; the photodetector adopts a PIN photodiode or an avalanche photodiode to convert the optical pulses into corresponding electrical pulses; and the pulse amplitude quantization module comprises a differential comparator and a peak detection circuit, which quantizes the peak value of the electrical pulses in each pulse period by using a fixed threshold or an adaptive threshold to generate a random bit sequence. The application realizes high-speed and high-stability random signal generation without an external electric clock, an ADC and digital post-processing, and has a simple device structure, low power consumption and high integration.

This application discloses a signal receiving system, a signal processing method, and a detection chip. The signal receiving system includes a receiving array, N accumulation units, N buffer units, N event determination units, and a summarizing unit. The receiving array includes N receiving units. Each accumulation unit increments the photon count by one each time an avalanche breakdown occurs within a preset time period, obtaining a frame grayscale value for the corresponding pixel. The buffer units, upon receiving the current frame grayscale value of a corresponding pixel, store the current frame grayscale value and output the previous frame grayscale value. The event determination units determine whether an event has occurred for each pixel based on the difference between the current frame photon count value and the previous frame photon count value. The summarizing unit summarizes the difference, coordinates, and timestamp information corresponding to the pixels that have experienced events into event data. Through this method, an event camera can be implemented using a single-photon avalanche photodiode array.

A photoelectric conversion element includes: an avalanche photodiode; a first counter configured to count each of an output signal of the avalanche photodiode of a first pixel and an output signal of the avalanche photodiode of a second pixel; a calculation unit configured to generate third output signals from the output signal of the avalanche photodiode of the first pixel and the output signal of the avalanche photodiode of the second pixel; and a second counter circuit configured to count the number of third output signals.

Light-detecting device comprising: a first pixel circuit arrangement containing a first avalanche photodiode; a second pixel circuit arrangement that a second avalanche photodiode, a first delay circuit which has an input coupled to a cathode of the second avalanche photodiode, and a first circuit comprising a first input coupled to the cathode of the second avalanche photodiode and a second input coupled to an output of the first delay circuit; and a control circuit coupled to an output of the first circuit and configured to control a potential of an anode of the first avalanche photodiode based on the output of the first circuit.

This invention provides a semiconductor ultraviolet single-photon detector and its control method, relating to the field of single-photon detection technology. The semiconductor ultraviolet single-photon detector includes a silicon carbide single-photon avalanche photodiode, a readout circuit, a signal processing module, a temperature control module, a bias module, and an enable module. The readout circuit passively quenches the silicon carbide single-photon avalanche photodiode to generate a negative pulse avalanche signal; the signal processing module filters, amplifies, and distinguishes the negative pulse avalanche signal, converting it into a digital signal output; the temperature control module provides a stable temperature for the readout circuit; the bias module provides a DC bias voltage for the readout circuit based on internal and external temperature differences; and the enable module shields against strong external light signals and sets a dead time. The semiconductor ultraviolet single-photon detector of this invention has advantages such as small size, easy integration, stable performance, mild operating conditions, and easy array expansion.

Avalanche photodiode designs having separate absorption and multiplication regions are disclosed. The avalanche photodiode designs include a charge layer tailored to allow charge carrier transport from the absorption layer to the multiplication layer and reduce the dark current when the avalanche photodiode is reverse biased.

Optoelectronic sensor (10) for measuring the distance of an object (18) in a detection area (16) using a time-of-flight method, wherein the sensor (10) comprises a light transmitter (12) for emitting a light signal (14) into the detection area (16), a light receiver (22) with a first plurality of avalanche photodiodes (24) in Geiger mode for detecting received light (20) from the detection area (16), a second plurality of time-of-flight measuring units (28) for determining individual light times between the emission of a light signal (14) and the triggering of a detection event in an avalanche photodiode (24), and a control and evaluation unit (32) configured to collect individual light times in a histogram, to locate a useful light signal (44) in the histogram using a threshold (38), and to determine a distance value to the object (18) from the useful light signal (44).wherein the control and evaluation unit (32) is further configured to first estimate an ambient light level from the histogram and then, based on the ambient light level, to set the threshold (38) such that it lies above an expected exponentially decreasing number of noise and ambient light events with a safety margin, characterized in that the control and evaluation unit (32) maintains a first lookup table which assigns an ambient light level to a summed number of detection events and that the first lookup table is trained prior to the distance measurement by repeatedly exposing the light receiver (22) to a defined ambient light level with the light transmitter (12) inactive and determining the respective sum of the first bins of a histogram generated thereby.

The utility model discloses a kind of photoelectric converter collocates optical filter's partial discharge detection and diagnosis device, comprising: SiPM optical sensor array, for capturing the optical signal generated by partial discharge, each sensor is composed of multiple parallel avalanche photodiode microcell;Multiple groups of optical filter, cover 300-800nm waveband, include 300-400nm, 400-500nm, 500-600nm, 600-700nm, 700-800nm five independent wavebands, the light transmittance of each waveband is greater than or equal to 90%, cutoff band attenuation is greater than or equal to 40dB;Signal processing unit, including transimpedance amplifier and decision tree analysis module, the transimpedance amplifier uses double power supply, gain is controlled by adjusting resistance RF and capacitor CF, the decision tree module is based on multispectral signal proportion and realizes discharge type classification;Sealing device, by epoxy resin integrated molding, inert gas is filled in inside, there is the center round hole for the installation of optical filter and the side hole of power supply / signal line goes out;Support unit, including upper and lower epoxy flat plate, interval 40mm, for fixing SiPM array and measured epoxy glass plate.

A photoelectric conversion device has an avalanche photodiode, and a counter counting and outputting the number of output signals from the avalanche photodiode until the number reaches the count number. An exposure time of the avalanche photodiode is controlled and a recharge cycle of the avalanche photodiode is controlled. Control is performed such that a ratio of the count number to the maximum number of times of recharging determined by a quotient obtained by dividing the exposure time by the recharge cycle is set to a first ratio in a first frame, and the ratio of the count number to the maximum number of times of recharging is set to a second ratio smaller than the first ratio in a second frame different from the first frame.

The present application provides avalanche photodiode, have: first semiconductor layer, have p type's conductivity type; Barrier layer, laminated in one side of first semiconductor layer, have p type's conductivity type; Light absorption layer, laminated in the opposite side of barrier layer with first semiconductor layer, have p type's conductivity type; Second semiconductor layer, laminated in the opposite side of light absorption layer with barrier layer; Multiplication layer, laminated in the opposite side of second semiconductor layer with light absorption layer, third semiconductor layer, laminated in the opposite side of multiplication layer with second semiconductor layer, have n type's conductivity type, first semiconductor layer, barrier layer, light absorption layer, second semiconductor layer and multiplication layer form first mesa, third semiconductor layer forms second mesa, second mesa is located in the inside than first mesa when looking from above, protrude than first mesa in the thickness direction, the doping concentration of barrier layer is above the doping concentration of light absorption layer, the doping concentration of second semiconductor layer is below the doping concentration of light absorption layer.

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

Aspects of the disclosure include a spatially distributed depth sensor array for vehicle sensing. An exemplary spatially distributed depth sensor array includes a 1 by N array of unit cells. Each unit cell includes a receive pixel having at least one single photon avalanche photodiode (SPAD) vertically stacked over at least one time-to-digital converter (TDC), a transmit pixel having at least one vertical cavity surface emitting laser (VCSEL), and a backplane. The receive pixel and the transmit pixel are integrated onto a surface of the backplane to define a respective unit cell. The backplane is configured to receive time-of-flight (TOF) signals from the at least one SPAD responsive to detection of a photon emitted from the at least one VCSEL.

This invention provides an n-type digital alloy material for the multiplication region of an avalanche photodiode and its preparation method. The digital alloy material comprises: a superlattice structure matching the crystal lattice of an InP substrate; the superlattice structure is formed by repeated stacking of single periodic units; each periodic unit comprises a layer, a first GaAsSb layer, an n-type Si-doped GaAsSb layer, and a second GaAsSb layer stacked sequentially; wherein the value of x ranges from 0.75 to 0.85; the thickness ratio between the layer, the first GaAsSb layer, the n-type Si-doped GaAsSb layer, and the second GaAsSb layer in a single periodic unit is 22:1:10:1. The digital alloy material and its preparation method provided by this invention can solve the problems of low n-type carrier concentration and narrow application range of n-type alloy materials in the multiplication region of avalanche photodiodes.

An avalanche photodiode (APD) includes a first electrode, a substrate layer, a buffer layer, a gain layer, a gradient layer, an absorption layer, a diffusion barrier layer, a contact layer, and a second electrode. The gain layer, the gradient layer, and the absorption layer are arranged vertically in sequence. The gain layer, the gradient layer, and the absorption layer are located between the buffer layer and the diffusion barrier layer. The gain layer includes at least two gain units, and the gain units are arranged in a stacked manner. Each of the gain units includes a multiplication layer and a charge layer that are arranged vertically. A distance between the charge layer and the gradient layer is less than a distance between the multiplication layer and the gradient layer.

Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.

The present application relates to a back-illuminated ultraviolet avalanche photodiode based on delta-doping and a preparation method thereof, comprising: an N-type doped silicon substrate layer; an intrinsic multiplication region I layer, an epitaxial P-type doped silicon layer and a P-type boron delta-doping layer which are sequentially stacked in a direction away from the N-type doped silicon substrate layer and located above the N-type doped silicon substrate layer; wherein the N-type doped silicon substrate layer is located at the back light side of the back-illuminated ultraviolet avalanche photodiode, the P-type boron delta-doping layer is located at the light side of the back-illuminated ultraviolet avalanche photodiode, and the P-type boron delta-doping layer is used to perform a surface passivation function; the intrinsic multiplication region I layer is configured to serve as an avalanche multiplication region under a reverse bias, and the epitaxial P-type doped silicon layer and the N-type doped silicon substrate layer respectively serve as electrodes located on both sides of the avalanche multiplication region to form a PIN junction structure. The device can systematically and cooperatively optimize the ultraviolet detector.

This invention relates to a photoelectric conversion device, a photoelectric conversion method, a computer program product, and a storage medium. The photoelectric conversion device includes a photoelectric conversion element comprising an avalanche photodiode for outputting a signal based on incident photons, and a counter for counting and outputting the number of output signals from the avalanche photodiode. It determines whether the number of output signals is equal to or greater than a threshold. The exposure time of the avalanche photodiode and the recharge cycle of the avalanche photodiode during the exposure time are controlled. At least one of the threshold, the exposure time, and the recharge cycle is controlled such that a maximum number of recharges determined based on the exposure time and the recharge cycle is greater than the threshold.

The present invention provides a photoelectric conversion device that can suppress changes in color even in environments where flashing light sources or light sources moving within a frame are used as illumination. [Solution] The photoelectric conversion device is characterized by comprising: an avalanche photodiode; a counter that counts and outputs the number of output signals from the avalanche photodiode until it reaches a saturation determination count; and a control unit that controls the exposure time of the avalanche photodiode and the recharge period of the avalanche photodiode, thereby setting a first pixel whose ratio to the saturation determination count with respect to the maximum recharge number, which is determined by the quotient obtained by dividing the exposure time by the recharge period, is a first ratio; and a second pixel whose ratio to the saturation determination count with respect to the maximum recharge number is a second ratio smaller than the first ratio.

This invention relates to a photoelectric conversion element, a photoelectric conversion device, and an apparatus. The photoelectric conversion element, disposed in a semiconductor layer having a first surface and a second surface opposite to the first surface, includes: a first semiconductor region of a first conductivity type, arranged to extend across a first depth relative to the first surface; a second semiconductor region of a second conductivity type, arranged to surround the first semiconductor region in a planar view and having a peak of impurity concentration at a second depth between the first surface and the first depth; and a third semiconductor region of a second conductivity type, arranged closer to the second surface than the first semiconductor region to the second surface, and forming an avalanche photodiode with the first semiconductor region. The boundary surface of the second semiconductor region on the second surface side is located closer to the first surface than the first depth to the first surface.

The application belongs to the technical field of semiconductor manufacturing, and provides an avalanche photodiode and a preparation method thereof, wherein a transition layer structure is constructed by using an InGaAlAs quaternary material layer, the growth rate of the quaternary material layer in contact with an absorption layer is V2, the growth rate of the remaining quaternary material layer is V3, the growth rate of the absorption layer and other layers is V1, the avalanche photodiode is obtained by molecular beam epitaxy growth with V1=0.4 μm / h~0.8 μm / h, V2 / V1=1~1.1, and V3 / V1=1.5~2.5; V1 is small, which is helpful to improve the electrical performance, reduce the background concentration, reduce the surface defects, and provide a prerequisite for the smooth growth of the transition layer structure; V2 is close to V1, which can ensure the interface performance of the transition layer structure and the absorption layer; thus, by controlling V3 to be greatly improved, it is beneficial to improve the efficiency and realize the balance between high quality and high-speed production.

This provides a photoelectric conversion element, etc., capable of determining whether counting errors are occurring due to flashing light sources or light sources moving within a frame. [Solution] The photoelectric conversion element includes an avalanche photodiode, a first counter that counts the output signals of the avalanche photodiode of a first pixel and the avalanche photodiode of a second pixel, a calculation unit that generates a third output signal from the output signals of the avalanche photodiode of the first pixel and the avalanche photodiode of the second pixel, and a second counter circuit that counts the number of the third output signals.

This invention discloses a semiconductor data testing anomaly early warning method and system, relating to the field of integrated circuit testing technology. The method includes: performing a stepped voltage test on the chip under test by calibrating a purely electronic current signal, while simultaneously monitoring changes in drain current, substrate current increments, and voltage states; calculating hot carrier injection efficiency parameters based on drain current changes and substrate current increments, and combining these parameters with the voltage states to generate photon detection commands; driving an InGaAs avalanche photodiode array to collect photon pulse counts based on the photon detection commands, and calculating a chip damage risk index based on the hot carrier injection efficiency parameters and photon pulse counts to generate a risk assessment report. This invention calculates the chip damage risk index using hot carrier injection efficiency parameters and photon pulse counts, achieving dynamic damage quantification analysis by integrating electrical parameters and optical data, thus achieving holographic perception and early risk identification of chip anomalies.

Aspects of the present disclosure include spatially distributed depth sensor arrays for vehicle sensing. An example spatially distributed depth sensor array includes a 1 x N array of unit cells. Each unit cell includes a receiving pixel having at least one single photon avalanche photodiode (SPAD) vertically stacked above at least one time-to-digital converter (TDC), a transmitting pixel having at least one vertical cavity surface emitting laser (VCSEL), and a backplane. The receiving pixel and the transmitting pixel are integrated onto a surface of the backplane to define a respective unit cell. The backplane is configured to receive a time-of-flight (TOF) signal from the at least one SPAD in response to detecting a photon emitted from the at least one VCSEL.

The present invention relates to an avalanche photodiode (APD) subassembly and an APD device (200). The APD subassembly comprises a substrate (201), an n-type contact layer (203) formed on the substrate (201), a p-type contact layer (202), and an antimony-containing avalanche layer (206). The avalanche layer (206) is disposed between the n-type contact layer (203) and the p-type contact layer (203). The APD subassembly has a multi-stage structure including a first stage (207) and a second stage (208). The first stage (207) includes a p-type contact layer (202), and the second stage (208) includes an avalanche layer (206). The first layer (207) has a smaller cross-sectional area than the second layer (208), and its cross-sectional area is perpendicular to the direction from the substrate (201) to the p-type contact layer (202).

The present invention relates to an avalanche photodiode (APD) subassembly and an APD device (400). The APD subassembly comprises a substrate (401), a first contact layer (403) formed on the substrate (401), a second contact layer (402), and an antimony-containing avalanche layer (406). The avalanche layer (406) is disposed between the first contact layer (403) and the second contact layer (402). The first contact layer (403) is an n-type contact layer. The second contact layer (403) includes a p-type contact region (450) formed by diffusing zinc. The p-type contact region (450) has a smaller cross-sectional area than the avalanche layer (406), and its cross-sectional area is perpendicular to the direction from the substrate (401) to the second contact layer (402).