480 results about "Avalanche photodiode" patented technology

The invention discloses a high-precision laser ranging system and method based on multi-frequency modulation, and relates to the field of laser ranging, and the system comprises a multi-frequency laser transmitting module which comprises generators of different frequency bands and can be independently regulated, rapidly switched and matched with a high-precision frequency modulation unit; the laser receiving and signal conditioning module is used for processing signals by using an avalanche photodiode, a low-noise preamplifier and the like; the signal processing and analyzing module is used for calculating the distance by means of a high-speed digital signal processor in combination with a multi-frequency distance measurement algorithm; a display and control module and a temperature compensation module are further included, the method comprises the steps of multi-frequency laser emission, receiving conditioning, signal processing, display control and temperature compensation, and high-precision distance measurement is achieved through fine operation according to environment and target characteristics. The method is high in distance measurement precision, and error compensation in a complex environment exceeds 90%; the adaptability is high, and automatic adjustment is achieved in different distances and environments; the real-time performance is good, and a result can be obtained within 10 milliseconds; operation is convenient, wireless and data management is supported, and laser ranging innovation is promoted.

The invention relates to a low-noise semiconductor photoelectric detector, and belongs to the technical field of photoelectric detection. The low-noise photoelectric detector is characterized by consisting of an avalanche photodiode (1) for normally receiving optical signals and a dark pixel avalanche photodiode (2). Through introduction of the dark pixel structure, background noise and interference are compensated under the condition that normal optical signal receiving is not affected, and the signal-to-noise ratio of the detector is improved. The method is suitable for measuring extremely weak optical signals, and can be widely applied to the fields of laser ranging, quantum communication, quantum key distribution, medical imaging and the like.

The invention provides a bias voltage providing circuit of an avalanche photodiode and a PON gateway, and relates to the technical field of optical communication. The bias voltage providing circuit of the avalanche photodiode comprises a bias voltage input unit, a bias voltage control input processing unit and an avalanche photodiode protection unit. When the illumination intensity of the target avalanche photodiode exceeds the preset illumination intensity, the photo-generated current of the target avalanche photodiode exceeds the preset current, and the avalanche photodiode protection unit responds to the situation that the photo-generated current of the target avalanche photodiode exceeds the preset current. The diode bias voltage applied to the target avalanche photodiode is reduced, so that the photo-generated current of the target avalanche photodiode is reduced, and overload protection of the target avalanche photodiode is completed. Based on the above content, the problem that the target avalanche photodiode is easy to damage due to overload in the prior art can be improved.

A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

The invention is suitable for the technical field of distance measurement, and provides a distance detection method and device for an underwater target, electronic equipment and a program product. The method is applied to a frequency-modulated continuous wave laser detection system, and a signal receiving end of the frequency-modulated continuous wave laser detection system comprises a two-dimensional matrix detector array composed of a plurality of single-photon avalanche photodiodes. The method comprises the following steps: transmitting a plurality of first laser signals with different frequencies to an underwater target through a signal transmitting end of a frequency-modulated continuous wave laser detection system; receiving second laser signals with different frequencies through a plurality of single-photon avalanche photodiodes; performing two-dimensional discrete synthesis processing on the second laser signals with different frequencies to obtain target echo signals; and determining the distance between the underwater target and the frequency-modulated continuous wave laser detection system according to the target echo signal. According to the frequency-modulated continuous wave laser detection system, a plurality of laser signals with different frequencies can be transmitted and received, so that the detection distance and the resolution ratio of an underwater target can be improved.

A visualization system for dynamically visualizing an eye includes a laser module operable for outputting a primary laser beam along a beam axis, a beam splitter positioned in the beam axis and configured to direct a first beam portion along the beam axis and a second beam portion along a detection axis that is orthogonal to the beam axis. A microelectromechanical system (MEMS) scanner is arranged on the beam axis and configured, in response to the first beam portion, to output a scanning laser along a visualization path. An avalanche photodiode (APD) detector receives the second beam portion. A 4F correlator optical system has a spatial filter arranged along the visualization path. An optional optical flat may be disposed between the eye and the 4F correlator optical system to achieve stereo parallax.

According to one embodiment of the present disclosure, a multipath interference correction system for a coaxial scanning LIDAR, includes a scanner driving unit configured to drive a scanner included in a coaxial scanning LIDAR and obtain a position signal of the scanner, a measurement light modulation signal input unit configured to obtain a demodulation signal of measurement light emitted from laser of the coaxial scanning LIDAR, a detection light input unit configured to receive detection light mixed with reflection light and multiple interference light from an avalanche photodiode of the coaxial scanning LIDAR and output a detection light signal, and a real-time processor for outputting a depth map based on the detection light signal, the demodulation signal of the measurement light, and the position signal of the scanner.

The invention provides a single-photon detector gating signal generation system and generation method. The system comprises a bias voltage source; the gating circuit is provided with a first sine branch and a second sine branch, the first sine branch is configured to output a first sine voltage signal, and the second sine branch is configured to output a second sine voltage signal; the frequency of the first sinusoidal voltage signal is greater than that of the second sinusoidal voltage signal; the second sinusoidal voltage signal, the first sinusoidal voltage signal and the bias voltage signal are matched to generate a gating signal acting on the avalanche photodiode; based on the period of the first sinusoidal voltage signal, the gating signal has an amplitude greater than a preset value in a continuous first number of periods, and the gating signal does not have an amplitude greater than the preset value in a subsequent continuous second number of periods. The generated gating signal can accelerate the carrier removal process from the physical mechanism level, the post-pulse probability is suppressed, the required dead time is effectively shortened, and the data rate of the detector is further improved.

The invention provides a light detection apparatus and a distance measuring apparatus. A light detection device according to the present invention comprises: a first chip including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate including a plurality of pixels including avalanche photodiodes; a separation unit for separating the plurality of avalanche photodiodes from each other; and a plurality of concavo-convex portions, each of which is provided on the light incident side of the first semiconductor substrate with respect to each of the plurality of pixels. And a second chip including a second semiconductor substrate and a second wiring layer; wherein the first chip is bonded to the second chip, such that the first chip and the second chip face each other; moreover, each of the plurality of concave-convex parts is divided into four parts in a plan view.

The invention provides a detection system and method for an avalanche photodiode, and the system comprises an arbitrary signal generator, a laser, an adjustable attenuator, a time-to-digital converter and a test processor, the first output end of the arbitrary signal generator is connected with the laser, the laser is connected with the adjustable attenuator, and outputs a light pulse to the adjustable attenuator; the adjustable attenuator inputs the attenuated optical signal to the input end of the avalanche photodiode to be tested; a second output end of the arbitrary signal generator is connected with a time-to-digital converter; the time-to-digital converter receives an output signal of the avalanche photodiode to be tested; the test processor is connected with a to-be-tested avalanche photodiode and is used for debugging and configuring parameters of the to-be-tested avalanche photodiode; a to-be-detected avalanche photodiode is placed on the detection tool, and the detection tool and the semiconductor refrigerator are packaged together. According to the invention, the compatibility and integration degree of the system can be improved, the stability of the system is improved, and the sensitivity to detected photons is high.

A photoelectric conversion apparatus including a first substrate including a first semiconductor layer and a first wiring structure stacked on the first semiconductor layer, and a second substrate including a second semiconductor layer and a second wiring structure stacked on the second semiconductor layer, includes an avalanche photodiode arranged on the first semiconductor layer, a first resistive element arranged on the first substrate and connected to the avalanche photodiode, a waveform shaping portion arranged on the second semiconductor layer and configured to shape an output signal of the avalanche photodiode, and a second resistive element arranged on the first substrate and connected to the avalanche photodiode, the waveform shaping portion, and the first resistive element.

The invention provides an FSO multi-sensor fusion method based on unscented Kalman filtering and an RBF neural network, and the method comprises the steps: carrying out the unscented Kalman filtering time updating, and carrying out the measurement of a noise covariance adjustment mechanism and an event triggering mechanism based on light intensity self-adaption; the unscented Kalman filter measures and adjusts confidence weights of the infrared camera and the four-quadrant detector according to the channel state provided by the avalanche photodiode, and processes data output by the infrared camera and the four-quadrant detector according to the confidence weights; then, the posterior state estimation of the unscented Kalman filter at the current moment is output, and a position component is extracted and transmitted. Normalized light intensity reflecting channel quality is used as a key state to carry out synchronous estimation, an RBF neural network is used to carry out dynamic modeling and compensation on nonlinear errors of a four-quadrant detector, and a self-adaptive unscented Kalman filtering framework with a line learning capability is constructed. And finally, a virtual sensor output with high update rate, high precision and high sensitivity is generated.

The photoelectric conversion device includes a semiconductor layer provided with an avalanche photodiode, and an interconnection structure layer provided on a side of a first surface of the semiconductor layer. The interconnection structure layer includes an interconnection structure made of a metal material and overlapping with the avalanche multiplication region of the avalanche photodiode in a plan view. The interconnection structure includes a first interconnection, a second interconnection disposed farther from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection. An opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view. The second interconnection is disposed so as to overlap an entire of the opening in the plan view. The contact electrode is arranged around the opening in the plan view.

A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the end surfaces; a semiconductor photodetector including a semiconductor substrate; and a wiring member electrically connected to the semiconductor photodetector. A length of the scintillator in the first direction is longer than that of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction. The semiconductor substrate includes a plurality of photodetection regions disposed in a first portion and first electrodes and a second electrode disposed in a second portion. Each of the photodetection regions includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.

A semiconductor element including an array in which a plurality of avalanche photodiodes is arranged includes a plurality of first electrodes configured to receive supply of a first voltage to be used by the plurality of avalanche photodiodes from outside, and at least one second electrode configured to receive supply of a second voltage from outside different from the first voltage. The plurality of first electrodes and the at least one second electrode are disposed outside the array. The at least one second electrode is disposed between one and another one of the plurality of first electrodes.

The present disclosure aims to provide a photoelectric conversion device capable of suppressing an increase in power consumption of a SPAD pixel. For example, a photoelectric conversion device may include an avalanche photodiode including an anode and a cathode in each pixel of a pixel array. The device may include a recharger configured to recharge the anode or the cathode once per unit exposure time, a gating circuit configured to generate a pulse signal based on an output of the avalanche photodiode at a plurality of different timings within the unit exposure time, and a counter configured to count the pulse signal from the gating circuit.

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

The present disclosure relates to a light reception element with which it is possible to perform inspection in a shorter time. Provided is a light reception element comprising a pixel array unit in which pixels are arranged in an array form, each of the pixels comprising an avalanche photodiode element, a waveform shaping circuit that shapes the output of the avalanche photodiode element into a pulse, and a counter circuit that counts a detection pulse outputted by the waveform shaping circuit or an inspection pulse outputted by an inspection pulse generation circuit, wherein the pixel has a determination circuit that determines whether the counter circuit is normal or not on the basis of a count value outputted from the counter circuit. The present disclosure can be applied, for example, to a light reception element in which a counter circuit for counting the number of photons is provided for each pixel.

To provide a light detection device with a plurality of avalanche photodiodes formed on a semiconductor substrate composed of compound semiconductor, improving both light detection sensitivity and light detection time resolution.SOLUTION: A light detection device comprises a first layer 10 composed of compound semiconductor, and a second layer 50 composed of silicon. The first layer 10 includes a plurality of avalanche photodiodes 20 disposed in a two-dimensional layout and operating in Geiger mode. The second layer 50 incudes a plurality of output units 30 which are overlapped on the first layer. Each output unit 30 has a quenching element 31. The quenching element 31 is serially connected to at least one of the plurality of avalanche photodiodes 20.SELECTED DRAWING: Figure 6

Photoelectric conversion devices and apparatuses are disclosed. An apparatus in which a photoelectric conversion unit is disposed on a semiconductor substrate including a first surface and a second surface on an opposite side of the first surface. The photoelectric conversion unit includes: a first region of a first conductivity type, the first region constituting a part of the first surface and being connected to a detection circuit configured to detect an avalanche breakdown; a second region of the first conductivity type, the second region disposed away from the first region; a third region of a second conductivity type opposite to the first conductivity type, the third region being disposed at a position closer to the second surface than the first region and the second region; and a fourth region disposed between the first region and the second region. The second and third regions serve as avalanche photodiodes. The first region and the second region are configured to be conductive to each other via the fourth region.

An avalanche photodiode sensor according to an embodiment includes a first semiconductor substrate and a second semiconductor substrate bonded to a first surface of the first semiconductor substrate, wherein the first semiconductor substrate includes a plurality of photoelectric conversion portions arranged in a matrix and an element separation portion for element-separating the plurality of photoelectric conversion portions from each other, the plurality of photoelectric conversion portions include a first photoelectric conversion portion, the element separation portion has a first element separation region and a second element separation region, the first photoelectric conversion portion is arranged between the first element separation region and the second element separation region, the first semiconductor substrate further includes a plurality of concave-convex portions arranged on a second surface opposite to the first surface and arranged between the first element separation region and the second element separation region, and the second semiconductor substrate includes a reading circuit connected to each of the photoelectric conversion portions.

Disclosed are a green laser phase rangefinder and a ranging method, which relate to the field of laser ranging. The rangefinder includes a direct digital synthesizer (DDS), a frequency mixing filter circuit, a microcontroller unit (MCU), a first amplifier circuit, an analog switch, a first laser beam module, a second laser beam module, a second amplifier circuit, an avalanche photodiode, a third amplifier circuit and band pass filter circuit, an analog-to-digital converter (ADC) module, a receiving lens, and a high-voltage circuit. A green laser diode is arranged in the first laser beam module; and a red laser diode is arranged in the second laser beam module. In the present disclosure, the green laser diode and the red laser diode are combined to implement ranging. The present disclosure features low power consumption, low costs, and high measurement accuracy.

An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

To provide a photoelectric conversion device that has an avalanche photodiode and can suppress image quality deterioration, in a photoelectric conversion device, a photoelectric conversion element including an avalanche photodiode for photoelectrically converting an optical image, an image generation unit configured to generate a first image based on a signal acquired by the photoelectric conversion element, an acquisition unit configured to acquire first characteristic information of the photoelectric conversion element, and a correction processing unit configured to perform first correction processing on the first image by using the first characteristic information are provided, and in the correction processing unit, weighting of the first correction processing is made different according to a magnitude of a pixel signal in the first image.

A controller for an avalanche photodiode sensor, including circuitry configured to: control a latch circuit to store one or more least significant bits of a counter value of a counter circuit at the end of a first frame, wherein the counter circuit is configured to count exposure time intervals of a frame in which an avalanche photodiode pixel has generated a light detection event; enable readout of the one or more least significant bits from the latch circuit in a second frame following the first frame; and enable readout of one or more most significant bits of the counter value from the counter circuit in the second frame.

Provided is an image capture apparatus including an image capture element including an avalanche photodiode configured to photoelectrically convert an optical image and, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image signal based on an output signal from the image capture element, calculate, based on the image signal, a number of occurrences of avalanche amplification in the image capture element, store a cumulative value of the number of occurrences, and control a parameter related to exposure when it is determined that a brightness of an image based on the image signal is out of a predetermined range, in which the predetermined range is decided based on the cumulative value.

The invention discloses an avalanche photodiode and a detector. The avalanche photodiode comprises an epitaxial layer with a first doping type, a third semiconductor region, a fourth semiconductor region, a first semiconductor region with a second doping type, a second semiconductor region and a gettering region, the first semiconductor region is a cathode and is arranged on the first surface, the second semiconductor region wraps the periphery of the first semiconductor region, and the third semiconductor region and the first semiconductor region are at least partially overlapped in the direction from the first surface to the second surface to form a main junction; the gettering region is arranged on the epitaxial layer and is close to the second surface, the gettering region and the main junction are at least partially overlapped in the direction from the first surface to the second surface, and the gettering region and the third semiconductor region are arranged at intervals in the direction from the first surface to the second surface; a gap is formed between the fourth semiconductor region and the gettering region in the direction parallel to the first surface. The avalanche photodiode provided by the technical scheme of the invention can improve the sufficiency of gettering.

A photodetector (90) having an exposure surface (91) has a first photodiode array (1) having a first light entry surface (11) and a second photodiode array (2) having a second light entry surface (21). The first photodiode array (1) has an avalanche photodiode (10). The second photodiode array (2) has a non-amplifying photodiode (10). The first light entry surface (11) and the second light entry surface (21) form sub-surfaces of the exposure surface (91).

The present invention discloses a visible light communication device based on a power line carrier circuit and a communication method thereof. The device includes: an Ethernet interface circuit, a power line carrier circuit, a switching switch, a signal attenuation circuit, a light source driving circuit, a light source, an avalanche photodiode, a photoelectric conversion circuit, a linear amplifier circuit, and a power detection circuit. The switching switch can switch the signal transmission mode from visible light communication to power line communication when the optical communication quality is poor, thereby improving the stability of the communication system. The power line carrier circuit modulates the signal in various ways, including OFDM, QPSK, BPSK, and ROBO. Compared with traditional visible light communication systems using OOK modulation, the communication rate and stability are significantly improved. The power detection circuit, the signal attenuation circuit, and the light source driving circuit cooperate to effectively control the power of the transmitted signal, enabling the signal to be transmitted without distortion. In addition, the power line can be replaced with a wire, twisted pair, etc., further improving the anti-interference capability and mobility.

The present invention provides a novel near-infrared single-photon detection system. The system is characterized in that it is composed of a gated signal output circuit (1), a switch control signal circuit (2), a logic gate control circuit (3), a capacitor (4), a bias voltage generation circuit (5), a near-infrared single-photon avalanche photodiode (6) and a signal readout circuit (7), wherein the signal readout circuit is composed of an amplifier (71) and a resistor (72). The present invention can be used to solve the signal loss problem generated when the near-infrared single-photon avalanche diode collects light signals in a gated quenching mode; and can be widely used in the field of extremely weak light detection such as optical time domain reflectometry, laser radar detection and medical imaging.