443 results about "Avalanche diode" patented technology

An integrated imager circuit comprising a monolithic array of single photon avalanche diodes (SPADs) for capturing an image of a scene when said scene is hit by an optical pulse, said array comprising: a plurality of SPADs connected to 2D readout circuits determines the intensity of the light reflected by said scene by counting the number of photons received by said SPADs during a period of time, a plurality of SPADs connected to 3D readout circuits determines the distance to said scene by determining the elapsed time between the emission of each pulse and reception of the corresponding reflected photons.

An apparatus and method for allowing avalanche photodiode based single-photon detectors to be driven by the same electrical circuit in gated and in free-running modes is proposed. The high-performance working of all the running modes relies on the capability of tuning the rise-time value of the electrical pulse driver which activates the avalanche photodiode in Geiger mode.

A Raman spectrometer that employs a time-gated single photon avalanche diode array as a sensor is described. The spectrometer can also perform fluorescence spectroscopy and laser induced breakdown spectroscopy (LIBS). A laser is used to provide an excitation signal to excite a specimen of interest. A spectrometer is used to separate the various intensities over a range of wavelengths, which are then caused to impinge on the array to be recorded. The time-gated single photon avalanche diode array is triggered in synchrony with the excitation signal so as to allow time resolution of the response of the sample of interest to the excitation. The array can be time-gated to resolve signals that have shorter durations as a function of time while excluding signals that have a longer time duration. Raman and LIBS signals can be observed even from specimens that fluoresce strongly.

A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode (105) in series with a second rectifier diode (106) also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (301). The die has a low resistivity buried diffused layer (303) having a first conductivity type disposed between a semiconductor substrate (301) having the opposite conductivity type and a high resistivity epitaxial layer (305) having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip (202) that has four solder bump pads (211-214). The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. §1.72(b).

The invention aims at providing a quenching and reading circuit for a single photon avalanche diode imaging device, which is composed of three modules including a quenching circuit, a holding circuit and a reading circuit, wherein the quenching circuit is used for generating a pulse signal having the same frequency with an incident photon signal, the holding circuit is used for generating a reset signal, the phase of the reset signal is different from the phase of quenching output, the frequency of the reset signal is the same with the frequency of the quenching output, and the reading circuit is used for performing count processing on the quenching output pulse signal and outputting the signal in a linear and logarithmic mode. Quenching processing is performed on an avalanche diode after photon incidence by utilizing the quenching circuit, pulse signal output with the same frequency as incident photons is generated and directly sent into the reading circuit, the reading circuit selects to output a final result in a linear or a logarithmic mode according to the control of a plus signal, and simultaneously the quenching output pulse is delayed to keep the frequency unchanged and the phase changed to serve as the reset signal for controlling the staring or stopping of quenching.

Disclosed is a single-photon-level resolution ratio sensor unit structure based on the standard CMOS technology. The single-photon-level resolution ratio sensor unit structure uses an SPAD. According to the single-photon-level resolution ratio sensor unit structure, basically, a deep N-well (3) is arranged above a P-type silicon substrate (4), a P-well area (2) is formed above the deep N-well (3) and wrapped by the deep N-well (3), an anode contact (9) is connected to the P-well area (2) through a heavy-doping P-well area (1), a cathode contact (10) is connected to an N-well area (6) and the deep N-well (3) through a heavy-doping N-well area (5), a shallow trench isolation area (7) is located between the P-well area (2) and the N-well area (6) to isolate a P-well from an N-well, a P-type doped protection ring (8) surrounds the shallow trench isolation area (7) so as to restrain dark noise caused by defects in shallow trench isolation, and a PN junction (11) is arranged between the bottom of the P-well area (2) and the deep N-well (3); the PN junction generates a high-voltage area when proper bias voltage is applied between the cathode and the anode, and an SPAD multiplication area is formed so as to explore photons; the breakdown voltage of the edge of the PN junction is higher than that of the SPAD plane multiplication area by controlling the concentration gradient of the deep N-well (3).

This invention relates to water works engineering safety protection equipments field and a dam leak position distribution light fiber temperature sensor monitoring apparatus and its method. The apparatus is formed by connecting the double-coupler, wavelength-division multiplex, snow-slide diode, main amplifier, sampling even device and sum device, computer, driver, laser diode and sensor cable. The sensor cable has two structures: one is the sensor light cable core of fiber, and the outer layer of the fiber is metal center protective cover, water-tight isolation layer, aramid fiber, outer protective layer; the other is heating sensor cable with isolation heating conductor in one of its structures. íí

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal, an input terminal for receiving an electrical current or being supplied with a voltage to be measured, a bipolar transistor having a base, an emitter and a collector, wherein a first PN junction is formed between the base and the collector and a second PN junction is formed between the base and the emitter, wherein the emitter is coupled to the input terminal and the base is coupled to the second voltage supply terminal, and wherein the first PN junction is designed for reverse biased operation as an avalanche diode, and a quenching and recharging circuit having a first terminal coupled to the first voltage supply terminal and a second terminal coupled to the collector of the bipolar transistors, the quenching and recharging circuit permitting operation of the first PN junction reverse biased above the breakdown voltage of the first PN junction.

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

A device that detects single optical and radiation events and that provides improved blue detection efficiency and lower dark currents than prior silicon SSPM devices. The sensing element of the devices is a photodiode that may be used to provide single photon detection through the process of generating a self-sustained avalanche. The type of diode is called a Geiger photodiode or signal photon-counting avalanche diode. A CMOS photodiode can be fabricated using a “buried” doping layer for the P-N junction, where the high doping concentration and P-N junction is deep beneath the surface, and the doping concentration at the surface of the diode may be low. The use of a buried layer with a high doping concentration compared to the near surface layer of the primary P-N junction allows for the electric field of the depletion region to extend up near the surface of the diode. With a low doping concentration through the bulk of the diode, the induced bulk defects are limited, which may reduce the dark current. The resulting structure provides a diode with improved quantum efficiency and dark current.

The invention belongs to the technical field of electronic technologies and photoelectronic imaging technologies, in particular relates to a single-photon avalanche diode and a three-dimensional CMOS (Complementary Metal Oxide Semiconductor) image sensor based on the diode. The single-photon avalanche diode of the invention improves the traditional rectangular photosensitive PN junction into a regular octagon and can conveniently and simply weaken edge breakdown and improve gain uniformity. A two-dimensional pixel array of the three-dimensional CMOS image sensor based on the diode comprises unit pixels of the regular octagon-shaped single-photon avalanche diode and is arrayed in a honeycomb-shape, thereby being convenient for interpolation and improving resolution in horizontal and vertical direction.

An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels.

A surge suppression unit comprises connection circuitry for coupling the surge suppression unit in a communication cable. Surge suppression circuitry uses Silicon Avalanche Diodes (SADs) that couple power surges on the communication cable to ground. In one embodiment, the surge suppression unit includes multiple surge suppression modules configured for inserting into different slots in a same enclosure. The surge suppression modules can be quickly and easily inserted and then removed for connection with different communication cables

The inventioN discloses a CMOS image sensor technology-based NP type single-photon avalanche diode (SPAD). The basic structure of the SPAD comprises a deep N-well arranged above a P-type silicon substrate; a P-well formed above the deep N-well; a lightly-doped guard ring surrounding the P-well; a N+ region formed above the P-well and overlapped with the guard ring; a PN-junction formed between the N+ region and the P-well; a cathode electrode and an anode electrode respectively led out of the N+ and P+; a heavily-doped P-type region formed above the N+ region and the guard ring; a P-well surrounding the guard ring and a substrate electrode led out of the P+. According to the technical scheme of the invention, through forming the heavily-doped P-type region on the surface of the N+ region, the dark counting caused by defects on the interface of an NP-type SPAD device can be reduced. Based on the effective layout technique, the dark counting caused by defects in the STI is reduced. Based on the effective guard ring technique, the edge breakdown of the SPAD device is prevented. Through applying an appropriate bias voltage between the electrodes, the response within the blue band is enhanced.

The invention discloses a dual-channel laser detector of aerosol particles and a detection method. The detector is composed of a particles sample injection part and an optical sampling part which are connected, and a controlling and processing part composed of a power supply module (63), a gas control module (64), a detection module (65), a simulating module (66), a data module (67), an industrial control computer module (61) and a display (62) which is respectively electrically connected with a gas pressure sensor (17, 18), an airflow pump (07, 15), a laser (20), an ultraviolet laser (31), an avalanche diode (41) and a photoelectricity multiplication tube (50, 51). The method is that setting the working pressure ratio of the airflow pump, and according to the time difference and intensity of the signals twice output by the avalanche diode, acquiring the particle sizes of the aerosol particles, the distribution information of the particle spectrum and the information of biological active substance and riboflavin to generate corresponding images, then storing and transporting to the display to display. The invention can be used for real-time on-line detection of the aerosol particles in atmosphere.

A detector comprising a photodetector including a single photon avalanche diode (SPAD), wherein the SPAD comprises a wide band-gap semiconductor material, and a quenching circuit electrically coupled to the photodetector comprising a first device, wherein the first device comprises a wide band-gap semiconductor material having a band-gap of at least about 1.7 eV at about 26° C.

A surge-suppression system utilizing a hybrid design comprised of metal oxide varistors, silicon avalanche diodes, a fuse element, filter capacitor and multiple surge planes and surge paths to dissipate and divert transient over-voltages away from sensitive electronic equipment. These multiple surge conduction paths provide redundant parallel planes which optimize the skin-effect phenomena, which is the flow of electrical current at the conductor surface. This design provides a very low impedance which produces a high performance surge-suppression system.