115results about How to "Reduce bias voltage" patented technology

A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer / spin injection layer (SIL) / spacer / PMA layer 1 / FGL / spacer / PMA layer 2 / capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer / SIL / spacer / PMA assist 1 / FGL / spacer / PMA assist 2 / capping layer configuration. SIL and PMA assist layers are laminates of (CoFe / Ni)x or the like.

A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer / spin injection layer (SIL) / spacer / PMA layer 1 / FGL / spacer / PMA layer 2 / capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer / SIL / spacer / PMA assist 1 / FGL / spacer / PMA assist 2 / capping layer configuration. SIL and PMA assist layers are laminates of (CoFe / Ni)x or the like.

A low-cost device for the detection of thermal neutrons. Thin layers of a material chosen for high absorption of neutrons with a corresponding release of ionizing particles are stacked in a multi-layer structure interleaved with thin layers of hydrogenated amorphous silicon PIN diodes. Some of the neutrons passing into the stack are absorbed in the neutron absorbing material producing neutron reactions with the release of high energy ionizing particles. These high-energy ionizing particles pass out of the neutron absorbing layers into the PIN diode layers creating electron-hole pairs in the intrinsic (I) layers of the diode layers; the electrons and holes are detected by the PIN diodes.

The invention discloses a liquid crystal display viewing angle controlling method, a liquid crystal display panel and a liquid crystal display. The method is used for the liquid crystal display panel including an array substrate and a color film substrate which are arranged in a form of paired boxes and comprises the following steps of: configuring a first planar transparent electrode in the color film substrate of the liquid crystal display panel, and configuring a second strip-shaped transparent electrode in the array substrate of the liquid crystal display panel, so as to form an edge electric field between the electrodes configured at the array substrate and the color film substrate through the first planar transparent electrode and the second strip transparent electrode; and controlling a display viewing angle of the liquid crystal display panel by controlling the formed edge electric field. According to the liquid crystal display viewing angle controlling method, the liquid crystal display panel and the liquid crystal display disclosed by the invention, the electrodes are respectively supplied in the color film substrate and the array substrate, and the controlling of a fringing field effect between the electrodes is utilized to enable a viewing angle of the liquid crystal display panel to be controllable, thus supplying the viewing angle controlling method for enabling the manufacturing process of the liquid crystal display panel to be simple.

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal, an input terminal for receiving an electrical current or being supplied with a voltage to be measured, a bipolar transistor having a base, an emitter and a collector, wherein a first PN junction is formed between the base and the collector and a second PN junction is formed between the base and the emitter, wherein the emitter is coupled to the input terminal and the base is coupled to the second voltage supply terminal, and wherein the first PN junction is designed for reverse biased operation as an avalanche diode, and a quenching and recharging circuit having a first terminal coupled to the first voltage supply terminal and a second terminal coupled to the collector of the bipolar transistors, the quenching and recharging circuit permitting operation of the first PN junction reverse biased above the breakdown voltage of the first PN junction.

A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.

The invention discloses a phase shift unit and a terahertz reflection-type liquid crystal phase shifter formed by the phase shift unit. The phase shift unit comprises a dielectric substrate, an electrode structure and a liquid crystal layer, wherein the dielectric substrate comprises two dielectric substrate bodies which are oppositely fixed and are parallel to each other; the electrode structure comprises two microstrip patch electrodes and a metal reflection electrode; the two microstrip patch electrodes are arranged on the opposite surfaces of the two dielectric substrate bodies respectively and are arranged in a mirror symmetry manner; the metal reflection electrode is arranged on the other surface of one dielectric substrate body; two sides of each microstrip patch electrode are connected with metal connection wires; a liquid crystal layer is arranged in the gap between the two dielectric substrate bodies; the terahertz reflection-type liquid crystal phase shifter comprises a plurality of phase shift units; and different DC bias voltage is added to each phase shift unit. According to the phase shift unit and the terahertz reflection-type liquid crystal phase shifter, the performance of the phase shift unit is improved; the phase shift range is greatly improved; meanwhile, the structure is simple; the preparation technology is easy to implement; the required bias voltage is relatively low; and the manufacturing cost is relatively low.

An image forming apparatus, which uses an electrostatic force to hold a recording medium during conveyance, includes a rotary belt, an image forming mechanism, a driving mechanism, a contact member in contact with the rotary belt, a charging mechanism and a controller. The controller may cause the contact member to be held in contact with the rotary belt, may cause the bias voltage to vary so as to reduce the electrostatic force during a time other than the image forming operation by the image forming mechanism, and may cause the driving mechanism to drive the rotary belt when the contact member is held in contact with the rotary belt.

The invention discloses a circuit for protecting an APD receiver. The circuit comprises the APD receiver, wherein the bias input end of the APD receiver is grounded through a first decoupling capacitor and a second decoupling capacitor, the bias input end of the APD receiver is connected with a first output end of a mirror image circuit, the input end of the mirror image circuit is connected with the output end of a boost control circuit, and the input end of the boost control circuit is connected with a microprocessor; the second output end of the mirror image circuit is grounded through a first resistor and meanwhile connected to the microprocessor; the microprocessor is connected with a signal losing LOS end of a limiting amplifier which is connected with a trans-impedance amplifier (TIA), the TIA is connected with the output end of the APD receiver, a second resistor is connected between the bias input end of the APD receiver and the first output end of the mirror image circuit, and the resistance value of the second resistor ranges from 10 K ohm to 100 K ohm. Through the circuit, an APD can be effectively protected against damage, the risk that a module loses efficacy is reduced, and the service life of the optical module is prolonged.

An improved non-sticking diamond-like nanocomposition includes networks of a-C:H and a-Si:O, wherein the H-concentration is between 85% and 125% of the C-concentration. The composition includes preferably 25 to 35 at % of C, 30 to 40 at % of H, 25 to 30 at % of Si, and 10 to 15 at % of O.

The invention discloses a radio frequency power amplifier integrated on a same chip. The radio frequency power amplifier comprises two stages of amplifying circuits. An automatic biasing cascode CMOS amplifier is adopted in the first-stage amplifying circuit, and a SiGe HBT connected through a common emitter is adopted in the second-stage amplifying circuit. According to the radio frequency power amplifier, the withstand voltage, the isolation and the bandwidth of the circuits can be improved, the voltage swing and working current of the circuits can be improved, the gain and the maximum output power of the circuits can be improved, the frequency performance of the power amplifier can be improved, full-chip integration can be achieved, and accordingly, the integration degree is improved, cost is reduced, and the application is simplified.

An optical receiver is provided as a device capable of detecting a small optical power with satisfactory accuracy and detecting the optical power in a wide dynamic range. In the optical receiver a bias generator applies a variable voltage to an avalanche photodiode (APD). First and second current sensors generate first and second detected signals according to a photocurrent. A controller calculates an optical power, using either one of the detected signals. The first current sensor includes a current mirror circuit and generates a first detected signal by measuring an electric current proportional to the photocurrent. The second current sensor is disposed between the bias generator and the current mirror circuit, and the maximum of the photocurrent detectable by this second current sensor is greater than the maximum of the photocurrent detectable by the first current sensor.

A mass airflow sensor is disclosed that includes a heating element comprising an upstream side and a downstream side. Two resistive temperature sensors are placed on each side of the heating element and assuming mass air / liquid flows in a direction from left to right. The resistors are configured electrically in a Wheatstone bridge configuration. A regulated voltage is applied across the mass flow sensing, Wheatstone bridge. The regulated voltage is set high enough to produce self-heating effects on the sensing bridge. The central heating element will also be heated. As mass air / liquid flows across the temperature sensors and the heating element, the upstream (RU1 and RU2) resistors are cooled and the downstream (RD1 and RD2) resistors are heated. The resistance in the resistive temperature sensors changes with temperature creating a differential voltage signal proportional to the regulated voltage applied to the sensing Wheatstone bridge and rate of mass air / liquid flow.

Here, we demonstrate new material / structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The desired properties of an optimum photodetector is achieved. Different variations are discussed, both in terms of structure and material.

A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.

The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. The programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

The invention discloses an LC voltage-controlled oscillator with dynamic bias adjustment. The LC voltage-controlled oscillator comprises a cross coupling pair, an LC resonant cavity, a frequency tuning module and a peak detection module, wherein two differential output ports of the cross coupling pair are respectively connected with two input ports of the LC resonant cavity, the frequency tuning module and the peak detection module in parallel, and the two differential output ports are used as output ports of the LC voltage-controlled oscillator; the differential input port of the cross coupling pair is connected with the output port of the peak detection module, and the cross coupling pair realizes dynamic bias adjustment according to the peak of the output signal detected by the peak detection module in real time. The working point of the core circuit is automatically adjusted along with the output signal after rapid oscillation starting, and the circuit efficiency is improved. And meanwhile, the current waveform is improved, the power is reduced, deterioration of phase noise is avoided, and an oscillator with excellent phase noise while rapid oscillation starting under low voltage and low power consumption is realized.

A pixel driver architecture for an active matrix OLED display, the pixel driver architecture comprising a voltage-programmed master pixel programming circuit, and a first plurality of current-programmed slave pixel driver circuits, each coupled to said master pixel programming circuit.

The present invention relates to compound semiconductor ESD protection devices using plural compound semiconductor E-FETs or compound semiconductor multi-gate E-FETs. The device comprises plural compound semiconductor E-FETs or multi-gate E-FETs, in which each of the gates is DC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through at least one first resister, and at least one of the gates is AC-connected to the source, drain, or an inter-gate region between two adjacent gates in the multi-gate E-FET through a gate capacitor.

The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

A static random access memory (SRAM) cell includes a SRAM circuit and a programmable resistor connected to a storage node of the SRAM circuit. The SRAM circuit can be any type of SRAM circuit, such as a 3T, negative differential resistance (NDR) transistor-based circuit, or a 6T (conventional SRAM) circuit. The programmable resistor can be formed in a metal layer above the SRAM circuit to minimize the area requirements for the memory cell. Just before shutdown of the SRAM cell, the resistance state of the programmable resistor is changed (if necessary) based on the data value stored at the storage node. The programmable resistor provides a non-volatile indication of the stored data value at the time of power off. Then, when power is restored to the SRAM cell, a data value based on the resistance state of the programmable resistor is written back into the SRAM circuit.

A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. In one embodiment, the varactor shunt switch can be used as passive sensor with the capability of being wireless.

The present invention provides a ferromagnetic tunnel magnetoresistive film which is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage V1, applied to one of the tunnel junctions. By employing half-metallic ferromagnets 11 and 12 in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

An electroabsorption modulated laser (EML) which uses coupling for chirp correction is disclosed.

A polymer microstructure with a tilted micropillar array and a method of fabricating the same. The tilted micropillar array is formed by adjusting the incident angle of the ion beam for the ion beam treatment using a PECVD method with low energy consumption. The tilt angle of the micropillars is adjusted to a desired angle by adjusting at least one of the incident angle, the irradiation time, and the magnitude of acceleration voltage of the ion beam for the ion beam treatment.

The invention discloses a rectification circuit for radio frequency electronic tags. The rectification circuit at least comprises N rectifying units, and each of the rectifying units is in a difference structure, thus full-wave rectification for signals is implemented and the utilization rate of the signals is increased, in addition, a bias voltage is offered to grids of rectifying tubes by arranging a bias voltage generating tube so that all the rectifying tubes are in a subthreshold state, and meanwhile, a grid stabilization capacitor is used for reducing the impact from grid-source parasitic capacitances of the rectifying tubes, thereby stabilizing a grid voltage and reducing the impact on the bias voltages of the grids, caused by the fluctuation of a source signal.

The invention is a new method for erasing a flash EEPROM memory device. The memory device has a first semiconductor region within a second semiconductor region, source and drain regions in the first semiconductor region, a well terminal inside the first semiconductor region, a charge storing layer electrically isolated from the first semiconductor region by a dielectric layer, and a control terminal electrically isolated from the charge storing layer by a inter layer dielectric. The method comprises the steps of: applying a first voltage bias of first polarity to the well terminal; allowing a first time period to elapse; applying a second voltage bias of second polarity opposite to the first polarity to the control terminal; resetting the first voltage bias to zero; allowing a second time period to elapse; and resetting the second voltage bias to zero.

The invention discloses a high-sensitivity multi-reflection optical absorbing device which comprises a reflection optical cavity, end covers, an intermediate infrared LED (Light Emitting Diode) light source and two photodiodes, wherein the end covers are connected to the upper end and the lower end of the reflection optical cavity in a sealing manner, an air inlet and an air outlet are respectively formed in the upper end cover and the lower end cover; the reflection optical cavity is a stainless steel cylindrical member, the inner wall of the reflection optical cavity is a diffuse reflection surface formed by gold plating after coarse grinding, the reflection optical cavity is provided with an optical inlet and two optical outlets along the axial direction of the side wall, the intermediate infrared LED light source is arranged in the optical inlet, and the photodiodes are arranged in the optical outlets. The high-sensitivity multi-reflection optical absorbing device is capable of effectively prolonging the length of a detection optical distance within a smaller space, has the characteristics of compact structure, convenience in regulation, stable light path, small influence by environment temperature, high sensitivity and detection precision, and the like, and is especially suitable for measuring concentration of hydrocarbon explosion gases in a ship cabin environment.