A rapid frequency shift device and method for a semiconductor laser. The device includes a DBR laser, a reshaping mirror, a Faraday isolator, a half wave plate, a polarization beam splitter, a bi-pass AOM optical path, a saturated absorption optical path, a photoelectric detector, a phase locking demodulator circuit, a PID feedback circuit, a DDS signal generation circuit, a microcontroller, an analog-digital conversion circuit, a digital-analog conversion circuit and a laser current temperature control circuit. According to the invention, the rapid frequency shift of the DBR laser can be realized while the locking state is kept, the bi-pass AOM optical path is applied in a frequency-stabilized optical path, so that the luminous power loss of the main optical path for cooling is greatly reduced; the frequency precompensation technology is adopted to realize rapid frequency shift and remarkably lower the requirement of the rapid frequency shift for system feedback bandwidth, and besides, the design difficulty of the feedback circuit is reduced, the design is changed to be simple, economic and easy to realize, so that the wide-range rapid tuning can be realized even though the feedback bandwidth is lower.