177results about How to "Reduce crosstalk" patented technology

The invention provides a method for testing the dynamic strain of the surface of a rotating body in an electromagnetic environment. The method comprises the following steps: constructing a bridge by using strain gauges and acquiring dynamic characteristic data of the rotating part under actual constraint conditions; performing simulation calculation according to the dynamic characteristic data, and determining the optimal pasting position of the strain gauge; pasting a strain gauge and formulating a wiring scheme of a strain gauge wire; the strain gauge is connected with a voltage signal amplifier, the amplified signal is connected with a data acquisition system through a conductive slip ring, and the amplified strain signal is recorded and processed; acquiring strain signals in real time and taking the strain signals as test data, and performing whole-course test in a full-rotating-speed range to complete dynamic strain test on the surface of the rotating body. The system has high sensitivity, the sensitivity and the measurement precision of the system are improved through full-bridge configuration, larger output signals are provided, the full bridge can achieve temperature compensation through symmetrical circuit design, and the system has good linear output characteristics and facilitates signal processing and analysis within the strain range.

The invention relates to the technical field of audio noise reduction, in particular to an audio noise reduction method and system based on deep learning. The method comprises the following steps: acquiring original audio and sound production equipment operation data associated with the original audio; invalid audio elimination is carried out on the original audio, so that effective audio is generated; carrying out audio time alignment on the effective audio so as to generate a preprocessed standard audio; performing audio output mode detection on the preprocessed standard audio and the sound production equipment associated with the original audio to generate single-equipment output audio and multi-equipment output audio; audio period regular segmentation is carried out on single-device output audio, and single-device short-period output spectrum data and single-device long-period output spectrum data are generated. According to the invention, through invalid audio elimination, time alignment, layered noise extraction and abnormal noise identification, the accuracy and real-time performance of the noise reduction effect are improved.

The invention discloses a light field display system based on collimated light and multiple light control, and relates to the field of three-dimensional display. The system is provided with a diaphragm array layer which can limit the light emitting angle of a light source layer; the square lens array layer is arranged, light emitted by the light source layer can be converted into collimated light, and the directivity of the light is guaranteed; the orthogonal prism sheet layer is arranged, so that light rays are homogenized in two dimensions, and brightness balance of all parts of a final display area is ensured; pixel light rays are projected to different positions in a space through the light control grating layer, so that left and right eyes can see different image information respectively to form stereoscopic vision; the unidirectional diffusion layer is arranged above the light control grating layer, light rays are diffused in a unidirectional manner, and the same three-dimensional effect is generated at different positions in the vertical direction; and reverse compensation is carried out through a diffusion error compensation algorithm, so that observers at different positions can obtain consistent visual experience, and finally, a three-dimensional light field display effect with uniform brightness and low crosstalk is presented.

An electric connector comprises an insulating body and a first terminal module. The first terminal module comprises a plurality of first conductive terminals and a first grounding piece, each first conductive terminal comprises a first main body part and a first elastic arm, and the first elastic arm comprises a first butt joint part. The plurality of first conductive terminals comprise a first signal terminal group, a first grounding terminal and a second grounding terminal. The first grounding piece comprises a first body part, a first middle part, a first abutting elastic arm and a second abutting elastic arm. The first middle part is provided with a first contact lug contacted with the first elastic arm of the first grounding terminal and a second contact lug abutted against the first elastic arm of the second grounding terminal. The first abutting elastic arm comprises a first abutting part which abuts against the first elastic arm of the first grounding terminal. The second abutting elastic arm comprises a second abutting part which abuts against the first elastic arm of the second grounding terminal.

The invention relates to the technical field of laser, in particular to an on-chip series edge-emitting semiconductor laser array and a process method. The on-chip series edge-emitting semiconductor laser array sequentially comprises a semi-insulating substrate, a non-doped buffer layer, a P-type heavily doped layer, a P-type tunnel junction layer, an N-type tunnel junction layer, an N-type cladding, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type cladding and a P-type cover layer from bottom to top. Table surfaces on the two sides of each light-emitting unit are deeply etched to the P-type heavily doped layer, and a lateral current diffusion suppression groove is formed between the bottoms of any two adjacent light-emitting units. An on-chip series edge-emitting semiconductor laser array structure is adopted, the parasitic effect is reduced through coplanar electrode design, upper and lower electrodes can be prepared through a single process to reduce the cost, lateral current diffusion suppression grooves are formed between light-emitting units to reduce crosstalk, the light-emitting units are connected in series to work under the same injection current, and the light-emitting efficiency is improved. The requirements of a driving circuit can be effectively reduced, and light-emitting uniformity is improved.

The invention belongs to the technical field of integrated photonic devices, and discloses a total internal reflection light switch based on a phase change material and a use method thereof.The phase change material area is subjected to first pretreatment, the phase change material in the phase change material area is completely converted into an amorphous state from a crystalline state, and the phase change material in the phase change material area is subjected to second pretreatment; the difference value between the refractive index of the phase change material and the refractive index of the waveguide is greater than 0.6, and at the moment, the total internal reflection light switch is in a cross state; second pretreatment is carried out on the phase-change material area, the phase-change material in the phase-change material area is completely converted into a crystalline state from an amorphous state, the difference value between the refractive index of the phase-change material and the refractive index of the waveguide is 0-0.2, at the moment, the straight-through function of the total internal reflection optical switch is achieved, the power consumption of the optical switch is remarkably reduced, and the optical switch has a wide application prospect. Performance indexes of the optical switch are optimized, multi-mode optical signal transmission is achieved, and application of the optical switch in the fields of high-speed optical communication, optical interconnection and optical calculation is promoted.

The invention discloses a multi-channel holographic method based on a total-space dynamic switching metasurface. The method comprises the following steps: 1) constructing a nano-structure unit; 2) optimizing the structure parameters of the nano structure unit according to the incident light wavelength lambda; and 3) constructing a nano-structure array, wherein the nano-structure array comprises a plurality of nano-structure units. According to the invention, left-handed / right-handed circularly polarized light is set to be incident to the nano-structure array, and dynamic switching of four holographic channels is carried out by rotating a mask plate in a reflection space; in a transmission space, the relative positions of the two layers of nano-arrays are changed by translating the second layer of nano-structure array to obtain dynamic switching of the three holographic channels, and the seven holographic channels can be subjected to mutually independent and continuous phase regulation and control through the nano-bricks. According to the invention, full-space information utilization can be realized, multi-channel dynamic switching is realized, the information capacity of the device is increased, the functionality of the device is improved, and the device can be applied to the fields of large-capacity optical information storage and coding and the like.

The utility model relates to the technical field of electronic equipment, and discloses a circuit board and electronic equipment, the circuit board is provided with a differential signal hole group, and the hole group comprises a first signal hole pair and a second signal hole pair; wherein the two signal holes in the first signal hole pair are symmetrical about the first symmetry axis and located on different sides of the first symmetry axis, the first symmetry axis sequentially passes through the circle centers of the two signal holes in the second signal hole pair, and the first signal hole pair and the second signal hole pair are located on different sides of the first reference straight line respectively. The first reference straight line is perpendicular to the first symmetry axis. According to the circuit board and the electronic equipment provided by the invention, the crosstalk phenomenon between the differential hole pairs can be weakened, and the signal quality and the signal integrity are ensured.

The invention discloses a partition display system and method based on a polarization body holographic grating, and belongs to the technical field of display, and the system comprises a light source layer, a collimation optical layer, an electric control light diffusion layer, a polarization body holographic grating array layer and a liquid crystal display layer which are sequentially arranged from bottom to top; the light source layer can independently generate left-hand circularly polarized light and right-hand circularly polarized light; the collimating optical layer can convert light emitted by the light source layer into collimated light beams; the electric control light scattering layer has a transparent mode and a scattering mode which can be switched; the polarization body holographic grating array layer is formed by alternately arranging left-hand circular polarization gratings and right-hand circular polarization gratings; when the electric control light scattering layer is in a transparent mode, the liquid crystal display layer only performs rendering display on an area through which refracted light of the polarization body holographic grating array layer passes; and when the electric control light scattering layer is in a scattering mode, the liquid crystal display layer renders and displays all areas through which light passes. The invention has the advantages of high luminous efficiency utilization rate, low visual area crosstalk, ultra-thinness and the like.

The invention relates to the technical field of semiconductors, in particular to a multiplexing-based optical computing chip and a design method thereof.The multiplexing-based optical computing chip comprises a computing area formed by crossing a first waveguide and a second waveguide, and the computing area comprises a branch waveguide connected with the first waveguide and the second waveguide, a beam splitting part, an intensity modulation part and a first signal conversion part are sequentially arranged on the branch waveguide, the beam splitting part is used for splitting optical signals in a specific proportion, the intensity modulation part is used for modulating the signal intensity of the optical signals into a specific value, and the first signal conversion part is used for setting or maintaining the optical signals in a specific mode; the specific mode means that the optical signal has a specific polarization direction and / or a specific order; the second waveguide is provided with a calculation unit for calculating the sum of the optical powers of the plurality of optical signals. According to the multiplexing scheme provided by the invention, the data processing amount of the optical computing chip can be improved.

The invention discloses an integrated optical fiber sensor for measuring temperature strain at extreme high temperature, and the sensor comprises a crystal optical fiber which comprises a first optical fiber segment, a second optical fiber segment and a third optical fiber segment which are connected in sequence; the first optical fiber grating is formed in the first optical fiber section of the crystal optical fiber; the second optical fiber grating is formed in the second optical fiber section of the crystal optical fiber; wherein the diameters of the first optical fiber section and the third optical fiber section are the same, and the diameters of the second optical fiber section are different from those of the first optical fiber section and the second optical fiber section. The integrated optical fiber sensor can measure the temperature and the strain at the same time in an extremely high temperature environment. The invention further discloses a preparation method of the integrated optical fiber sensor.

The invention discloses a display panel and a display device. The display panel comprises a display area and a non-display area, the non-display area comprises a bending area arranged on one side of the display area and a first area arranged between the display area and the bending area, the array substrate comprises a first signal wire, and the first signal wire extends from the first area to the bending area; the touch layer is arranged on the array substrate and comprises a first wire and a second wire located on the side, away from the array substrate, of the first wire, the first wire is electrically connected with the second wire, the first wire continuously extends in the first area and covers at least part of the first area, the second wire extends from the display area to the bending area, and the second wire is electrically connected with the first wire. The second wire located on the side, close to the bending area, of the first area is electrically connected with the first signal wire, the first wire and the second wire are arranged in a layered mode, the first wire continuously extends in the first area, signal interference between the second wire and the array substrate can be reduced, and the touch effect of the display panel is improved.

The utility model discloses a quantum chip, layout structure and quantum computer, the quantum chip includes at least one quantum processor, each quantum processor includes the quantum bit and resonant cavity that are coupled in order on the signal transmission line, the resonant cavity includes the first port that is coupled with the external circuit, and the second port is coupled with the external circuit. And a quantum processor for inputting a first signal to the quantum processor and receiving an output signal of the quantum processor, the first signal including a driving signal for driving the quantum bit and a read input signal for measuring the quantum bit. The utility model has the advantage that the layout of the quantum chip can be optimized.

An image sensor, a method for forming a pixel, a pixel readout circuit, and a calibration method are disclosed. The image sensor comprises: a substrate, the substrate comprises a plurality of pixels, each pixel comprises a first photoelectric sensor device and a second photoelectric sensor device for converting an optical signal into an electrical signal; a plurality of deep trench isolation (DTI) structures, each DTI structure is arranged in a corresponding pixel in the substrate to isolate the first photoelectric sensor device from the second photoelectric sensor device of the corresponding pixel; and a plurality of metal gates (MG), the plurality of MGs are correspondingly arranged above the plurality of DTI structures, wherein, in each pixel, the second photoelectric sensor device is accommodated in the first photoelectric sensor device.

This invention provides a coolant flow channel plate, relating to the technical field of vehicle thermal management. It includes a cover plate fixed to the top of a main board, with the main board and cover plate welded together at their side edges to form an internal flow channel cavity. The cover plate has refrigeration unit inlet / outlet assemblies on its surface. The main board has, from left to right, a heater pump mounting port, a battery pump mounting port, and a motor pump mounting port. The circuits between the heater pump and battery pump mounting ports, and between the heater pump and motor pump mounting ports, within the internal flow channel cavity are each equipped with a first anti-heat-spreading section. The circuit between the motor pump and battery pump mounting ports forms a variable-diameter section, with a second anti-heat-spreading section at its front end. A guide section is provided on the circuit of the battery pump mounting port. This invention solves the problem of lacking anti-heat-spreading structures at the connection points of circuits in different temperature ranges, achieving the technical effects of reducing vehicle weight, reducing vehicle connection piping, reducing heat loss in the thermal management system, and improving thermal management efficiency.

The invention provides an amorphous alloy material, an elastomer structure and a six-dimensional force sensor. Specifically, the amorphous alloy material comprises Zr, Ta, V, Nb and M, and M is Cr, Al, Ti or Hf. The invention further provides application of the amorphous alloy material in a six-dimensional force sensor. The amorphous alloy material has high yield strength, low Young modulus and high elastic limit. When the amorphous alloy material is used for preparing the six-dimensional force sensor, the six-dimensional force sensor has the advantages of high sensitivity, high precision, wide range, low crosstalk and the like.

The application relates to the technical field of phased array radars, in particular to a phased array radio frequency front-end circuit. The circuit comprises a front-stage processing module, a first-stage power division network, an intermediate-stage bidirectional amplification network, a second-stage power division network and a final-stage multifunctional network which are sequentially electrically connected; an external radio frequency signal input end is electrically connected with an input end of the front-stage processing module; the first-stage power division network has four first branch output ends which are respectively electrically connected with input ends of the intermediate-stage bidirectional amplification network; an output end of the intermediate-stage bidirectional amplification network is electrically connected with an input end of the second-stage power division network; the second-stage power division network has sixteen second branch output ends which are respectively electrically connected with input ends of the final-stage multifunctional network. The phased array radio frequency front-end circuit of the application adopts a multistage power division network and a topological structure, reduces the insertion loss in the multiway signal distribution process, and meets the packaging demand of miniaturization of the phased array front end.

The present invention discloses a signal enhancement circuit based on an LPDDR5 / 5X transmitter, the signal enhancement circuit comprising: a parallel-to-serial conversion module for converting parallel low-speed data into serial high-speed data; a driving module for receiving the output of the parallel-to-serial conversion module and performing signal amplification; a signal enhancement module for enhancing the output signal of the driving module; wherein the output of the parallel-to-serial conversion module is connected to the input of the driving module, and the output of the driving module is connected to the output end of the signal enhancement module. The present invention solves the signal attenuation, inter-symbol interference (ISI) and crosstalk problems caused by packaging and PCB in high-speed data transmission by integrating a delay module, a voltage regulation module and fine PMOS and NMOS transistor control technology in the signal enhancement module, and optimizes the signal quality.

The present disclosure relates to an electronic display with in-pixel compensation and oxide drive transistors. The display pixel may include an organic light emitting diode, one or more emission transistors, a drive transistor, a gate setting transistor, a data loading transistor, and an initialization transistor. The drive transistor may be implemented as a semiconductor oxide transistor to mitigate threshold voltage hysteresis, thereby improving the first frame response at high refresh rates, reducing undesired brightness jumps at low refresh rates, and reducing image retention. The gate setting transistor may also be implemented as a semiconductor oxide transistor to reduce leakage at the gate terminal of the drive transistor. The initialization transistor may also be implemented as a semiconductor oxide transistor so that it can be controlled using a shared emission signal to reduce routing complexity. The remaining transistors in the pixel may be implemented as p-type silicon transistors. Display pixels configured in this manner can support in-pixel threshold voltage compensation and a conduction bias stress phase to further mitigate hysteresis.

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

The invention discloses a display panel, a display device and a preparation method of the display panel. The display panel comprises a substrate, a filter layer, an isolation structure and a light emitting layer. The filter layer and the light-emitting layer are arranged on the two sides of the substrate respectively to form the display panel of a bottom light-emitting structure. The light emitted by the light emitting units is the same as the corresponding light filtering parts in color under the filtering action of the light filtering parts, and therefore color display of the display panel is achieved. The isolation structure is arranged on the substrate and forms the plurality of isolation openings in a surrounding manner, so that the light-emitting layer is separated to form the light-emitting units which are mutually disconnected, crosstalk of carriers in the light-emitting layer can be reduced, and the use performance of the display panel is improved.

This application discloses a sensor assembly, including an insulating substrate comprising a first surface and a second surface disposed opposite to each other; a surface acoustic wave (SAW) pressure sensor disposed on the first surface, the SAW pressure sensor comprising a piezoelectric lithium niobate layer and two pairs of interdigital transducers disposed on the surface of the piezoelectric lithium niobate layer, the piezoelectric lithium niobate layer having a cavity and a corresponding thinned sensitive membrane region, the two pairs of interdigital transducers being disposed around the thinned sensitive membrane region in mutually perpendicular directions; and a platinum resistance temperature sensor and an interdigital capacitance humidity sensor disposed on the second surface. By having the SAW pressure sensor, platinum resistance temperature sensor, and interdigital capacitance humidity sensor disposed opposite to each other on the insulating substrate, combined with the cavity formed on the piezoelectric lithium niobate layer, and the two pairs of interdigital transducers disposed in mutually perpendicular directions, the detection accuracy is improved and crosstalk is reduced.

This utility model relates to the field of circuit board packaging technology, and in particular to a circuit board and a solid-state drive. The circuit board provided by this utility model sets high-speed differential line pairs as inner layer traces, and uses vias / through holes through the pads of the high-speed differential lines to electrically connect the high-speed connector and the controller. Since the vias / through holes only need to pass through the pads, the number of wiring layers through which the vias / through holes pass is greatly reduced, which makes it possible to use back drilling process to better reduce the number of residual posts and shorten the length of residual posts, effectively reduce signal reflection or crosstalk, and improve signal quality.

The application provides a heart rate detection module and an electronic device; wherein the heart rate detection module comprises a light emitting element, a light receiving element and a Fresnel film; the light emitting element and the light receiving element are arranged in optical isolation, the Fresnel film is located on the same side of the light emitting element and the light receiving element, and the light emitting surface of the light emitting element faces the Fresnel film; the Fresnel film has a light absorbing medium therein, and the light absorbing medium is located between the light emitting element and the light receiving element in the direction perpendicular to the Fresnel film. According to the heart rate detection module and the electronic device provided by the application, the crosstalk phenomenon of the detection light emitted by the light emitting element in the Fresnel film can be reduced / attenuated, that is, the light leakage in the Fresnel film can be effectively inhibited to weaken the light noise of the heart rate measurement, and the signal-to-noise ratio of the heart rate detection module can be improved.

The utility model discloses a perpendicular stack formula low crosstalk VGA interface structure relates to VGA interface technical field, square slot is opened on the metal shielded plate, one side fixedly connected with the fixed plate of metal shielded plate, one side fixedly connected with the sliding block of fixed plate, be provided with the moving block on the fixed plate, be provided with the sliding slot on the moving block, the sliding slot is connected with sliding block slidingly, in the utility model, adopt VGA and DVI mixed double -deck design through comparison file, focus on the compatibility of different signal interface, do not carry out special optimization to space saving, and the scheme adopts pure VGA double -deck perpendicular stack structure, and multiple VGA interfaces are orderly layered arrangement in the vertical direction, and this design makes full use of the longitudinal space of equipment, and the horizontal occupation area on the circuit board is greatly reduced, and the equipment internal space utilization is effectively improved, realizes the function such as saving space, reducing crosstalk, improving durability.

This invention provides a specially structured PCB for a 77GHz millimeter-wave radar used in automobiles. The PCB includes a copper foil metal shielding layer, vias, high-frequency signal lines, grounding protection lines, low-frequency signal lines, power supply lines, and intermediate-frequency signal lines. By classifying and arranging signal transmission lines according to frequency in different areas and employing corresponding line structures and protection measures, this invention effectively reduces crosstalk between different signal lines, improves the accuracy and stability of signal transmission, and thus enhances the radar's detection accuracy. The metal shielding layers covering the top and bottom layers of the PCB, along with the metal shielding frame at the edges, form a robust electromagnetic shielding structure, effectively shielding against external electromagnetic interference and improving the radar board's anti-interference capability in complex electromagnetic environments, ensuring the normal operation of the radar system.

The invention relates to the technical field of semiconductors, and discloses a double-gate two-dimensional transistor for multifunctional storage and logic calculation, which comprises a substrate, a floating gate layer, a tunneling layer, a channel layer, a top gate insulating layer, a bottom gate electrode, a top gate electrode, a source electrode and a drain electrode, the substrate is an N-type single-polished silicon oxide wafer, the floating gate layer is a graphene layer, the tunneling layer is a hexagonal boron nitride layer, the channel layer is a molybdenum disulfide layer, and the top gate insulating layer is a hexagonal boron nitride layer; the floating gate layer is arranged on the upper surface of the substrate, the tunneling layer covers the upper surface of the floating gate layer, the channel layer is arranged on the upper surface of the tunneling layer, and the top gate insulating layer covers the upper surface of the channel layer. By means of a heterogeneous stack structure of h-BN / MoS graphene and a double-gate independent regulation and control mechanism, single device integration of light perception, nonvolatile storage and logic operation is achieved, additional splicing links of sensing, storage and calculation units in a traditional system are omitted, and a hardware architecture is greatly simplified.

There is provided a display device including: a display panel including pixels; a polarizing layer disposed on the display panel and configured to polarize light in a first polarization direction; a liquid crystal layer disposed on the polarizing layer and including liquid crystal molecules; a lens array disposed on the liquid crystal layer and including lenses; and a polarization pattern disposed between the lenses and polarizing the light in a second polarization direction crossing the first polarization direction.

The invention discloses a signal transmission circuit, a design method and a server, relates to the field of signal processing, and solves the problems of signal crosstalk and interference in current signal transmission. The signal transmission circuit is introduced into an adapter plate, the adapter plate comprises a plurality of input pins, a ground pin and output pins, and the input pins are connected with the output pins through signal wires; according to the adapter plate, the arrangement mode of the signal wires, the input pins and the ground pins is optimized according to the frequency and the importance degree of transmission signals, meanwhile, the newly added ground pins in the adapter plate provide backflow paths for other signals, electromagnetic radiation can be restrained, and the risk of crosstalk and electromagnetic interference between the signals can be reduced. Therefore, the signal transmission circuit provided by the invention can reduce the generation of electromagnetic interference, effectively reduce the crosstalk between signals, and ensure the accurate transmission of the signals.

The invention relates to the technical field of semiconductor display, and discloses an OLED display panel capable of reducing crosstalk. The anodes are arranged on the back plate at intervals; the pixel definition layers are arranged between the adjacent anodes; the second light-emitting layer is located on the anode and the pixel definition layer, and the second light-emitting layer comprises a double-color light-emitting material corresponding to a second type of sub-pixels; the charge generation layer is located on the second light-emitting layer and comprises a first region and a second region which are disconnected from each other, the first region is located above the first type of sub-pixels, and the second region is located above the second type of sub-pixels; the first light-emitting layer is located on the charge generation layer, and the first light-emitting layer comprises a monochromatic light-emitting material corresponding to the first type of sub-pixels; and a cathode layer on the first light emitting layer. The crosstalk problem between the sub-pixels is effectively reduced, the process difficulty is reduced, and the yield is improved.