900 results about "Floating diffusion" patented technology

To provide an image sensor in which the conversion gain (CG) is improved, the arrangement efficiency and size of pixel transistors are increased, and a metal wiring layer is reduced.SOLUTION: An image sensor of the present invention includes a pixel including two photodiodes (PDs) disposed on both sides in a first direction, a deep trench isolation (DTI) structure including an internal DTI structure that separates the two PDs in the pixel from each other and extends in a second direction that is orthogonal to the first direction and an external DTI structure that separates the pixels from each other and extends in the first direction or the second direction, a floating diffusion (FD) region that is disposed between a central part of the external DTI structure extending in the first direction and an edge of the internal DTI structure, and a transmission gate (TG) disposed adjacent to the FD region and disposed at least one by one in the PD. The two PDs in the pixel share the FD region.SELECTED DRAWING: Figure 2

An image sensing device includes a first photoelectric conversion element configured to overlap a left region of a first microlens, a second photoelectric conversion element configured to overlap a right region of the first microlens, a first floating diffusion region configured to accumulate photocharges received from at least one of the first photoelectric conversion element and the second photoelectric conversion element, a first transfer gate disposed at a top-left side of the first floating diffusion region and configured to transfer photocharges of the first photoelectric conversion element to the first floating diffusion region, and a second transfer gate disposed at a bottom-right side of the first floating diffusion region and configured to transfer photocharges of the second photoelectric conversion element to the first floating diffusion region.

A control method of a high gain image sensor is provided. A column bias current source and a column PMOS amplifier transistor are provided in a column signal readout unit, the column bias current source is connected to a column-common current output connecting line, a drain of the column PMOS amplifier transistor is connected to a column-common current input connecting line, and a gate of the column PMOS amplifier transistor is connected to the column-common current output connecting line, to acquire an amplified signal of a floating diffusion region of a readout row pixel unit on the column-common current input connecting line. An SHCG is achieved, and a dynamic range in a dark light scene is expanded. A device structure size in the column signal readout unit can be much larger than the transistor in the pixel, which results in better process consistency and more flexible adjustment of the conversion gain.

The invention provides a control method of a high-gain image sensor, which is characterized in that a column bias current source and a column PMOS (P-channel Metal Oxide Semiconductor) amplifier tube are arranged in a column signal reading unit, the column bias current source is connected with a current output connecting line shared by a column, and a drain electrode of the column PMOS amplifier tube is connected with a current input connecting line shared by the column; the grid electrode of the column PMOS amplifier tube is connected with the common current output connecting line of the column directly or through a capacitor, and an amplified signal of a floating diffusion region of a read-out pixel unit can be obtained on the common current input connecting line of the column, so that the ultrahigh conversion gain is realized, and the dynamic range in a dark light scene is expanded; the size of a device structure in the column signal reading unit can be far larger than that of a transistor in a pixel, the process consistency is better, and the conversion gain can be adjusted more flexibly; the switching between the SHCG mode and the STD mode is realized by driving the switch module in the column signal reading unit, the impact on a power supply and the ground is smaller during operation, and the circuit stability is improved.

A pixel circuit includes a pixel array and a color filter. The pixel array includes pixels arranged in rows and columns, and each pixel includes a photodiode configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photodiode to transfer the image charge out from the photodiode. The color filter array includes color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the pixels is coupled to a first readout circuit, and the plurality of pixels includes a first subset of the pixels not coupled to a second readout circuit and a second subset of the pixels coupled to the second readout circuit. Two diagonally arranged pixels are coupled together to share a floating diffusion, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

A time-of-flight pixel circuit includes a photodiode configured to generate charge in response to modulated light reflected from an object. First and second transfer transistors are coupled to the photodiode. The first transfer transistor transfers a first portion of charge from the photodiode in response to a first modulation signal and the second transfer transistor transfers a second portion of charge from the photodiode in response to a second modulation signal. The second modulation signal is an inverted first modulation signal. A first floating diffusion is coupled to the first transfer transistor to receive the first portion of charge in response to a first modulation signal. Each one of a first plurality of sample and hold transistors is coupled between a respective one of a first plurality of memory nodes and the first transfer transistor.

A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

In one example, a solid-state imaging device includes a pixel array with pixels arrayed in a matrix. The pixels include first pixels that respectively include a photoelectric conversion section that performs photoelectric conversion of incident light; a transfer transistor that controls transfer of a charge generated in the photoelectric conversion section; a floating diffusion region that accumulates the charge transferred from the photoelectric conversion section via the transfer transistor; and an amplification transistor that causes a voltage signal corresponding to the charge accumulated in the floating diffusion region to emerge in a signal line. The first pixels are arrayed in a first diagonal direction in the pixel array, and at least two of the first pixels arrayed in the first diagonal direction share one region defined as the floating diffusion region.

Provided is a solid-state imaging device capable of suitably forming a capacitor for a floating diffusion portion. A solid-state imaging device of the present disclosure includes: a first substrate; a photoelectric conversion unit provided in the first substrate; a floating diffusion portion provided in the first substrate; and a capacitor including a first electrode electrically connected or connectable to the floating diffusion portion, a second electrode different from the first electrode, and a ferroelectric film or an antiferroelectric film provided between the first electrode and the second electrode.

An image sensor includes a pixel array and a readout circuit. The pixel array includes a first unit pixel region including first, second and third sub-pixel regions having a first color filter, sequentially disposed along a first row line, and sharing a first floating diffusion region, and a second unit pixel region including a first, second and third sub-pixel regions having a second color filter, sequentially disposed along a second row line, and sharing a second floating diffusion region. The readout circuit includes a first analog-digital converter receiving a first pixel signal from the first unit pixel region through a first pixel signal output line and converting the first pixel signal into digital data, and a second analog-digital converter receiving a second pixel signal from the second unit pixel region through a second pixel signal output line and converting the second pixel signal into digital data, wherein at least one of the first unit pixel region and the second unit pixel region further includes a phase detection pixel region.

A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels each comprising two photodiodes, a floating diffusion coupled between the two photodiodes, and two transfer transistor coupled between the two photodiodes and the floating diffusion. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each pixel is coupled to a first readout circuit. The pixels include a second subset of the pixels coupled to a second readout circuit and a first subset of the pixels not coupled to the second readout circuit. Each pair of pixels arranged in two adjacent rows includes a first pixel included in the second subset of the pixels and a second pixel included in the first subset of the pixels and disposed underneath one of the color filters.

An image sensor includes a first semiconductor chip which extends in first and second directions that intersect each other, and having a pixel part including a plurality of pixel regions; and a second semiconductor chip including a circuit part electrically connected to the pixel part, on the first semiconductor chip. The pixel part includes a photodiode, a floating diffusion node which accumulates photocharges generated by the photodiode, and a first source follower which amplifies and outputs a signal corresponding to a change in potential of the floating diffusion node. The circuit part includes a first pre-charge selection transistor connected between a first node and a second node, a second pre-charge selection transistor connected to the first pre-charge selection transistor, and a pre-charge transistor which pre-charges the second node connected to the first source follower. The plurality of pixel regions share the pre-charge transistor.

The invention discloses an image sensor and a manufacturing method thereof, the image sensor comprises a substrate, a photodiode, a storage node and a floating diffusion region which are arranged in the substrate at intervals, the storage node is arranged between the photodiode and the floating diffusion region, and one side, close to the storage node, of the photodiode is in a step shape; the first transmission grid electrode comprises a vertical grid electrode and a plane grid electrode, the vertical grid electrode is arranged in the substrate between the photodiode and the storage node, and the plane grid electrode is arranged on the vertical grid electrode and part of the substrate; a second transfer gate disposed on the substrate between the storage node and the floating diffusion region; the shallow trench isolation structure is arranged around the first transmission grid electrode, the storage node, the second transmission grid electrode and the floating diffusion region in a surrounding manner; and the shading structure is arranged on the first transmission grid electrode, the storage node and part of the second transmission grid electrode. According to the invention, the pixel transmission sensitivity can be improved, the parasitic light response of the storage node is reduced, and the imaging quality of the image sensor is improved.

An image sensor including: a pixel array including pixels; and a logic circuit including a row decoder to drive selected pixels, a column decoder to vary exposure time periods for a portion of the selected pixels, and a readout circuit to obtain pixel signals from the selected pixels, wherein each of the pixels includes a photodiode, a first transfer transistor connected between the photodiode and a first floating diffusion region, a second transfer transistor connected between the first floating diffusion region and a second floating diffusion region, a first reset transistor and a switch transistor connected to each other in series between a power node and the first floating diffusion region, a second reset transistor connected between the power node and the second floating diffusion region, a source-follower transistor connected to the second floating diffusion region, and a select transistor connected to the source-follower transistor.

An image sensor may include an array of imaging pixels arranged in rows and columns. Each imaging pixel may include a photodiode, an overflow capacitor, an overflow transistor that is interposed between the photodiode and the overflow capacitor, a floating diffusion region, a transfer transistor that is interposed between the photodiode and the floating diffusion region, a voltage supply, and a reset transistor that is interposed between the floating diffusion region and the voltage supply. The voltage supply may provide a voltage at a first magnitude that is less than the pinning voltage for a first portion of a reset period and may provide the voltage at a second magnitude that is greater than the pinning voltage for a second portion of the reset period.

Image sensors with improved memory effect are disclosed herein. In one embodiment, a method for reducing image lag associated with a pixel included in a plurality of pixels is described. The pixel includes a photodiode, a first floating diffusion coupled to the photodiode through a transfer transistor, a second floating diffusion coupled to the first floating diffusion through a dual floating diffusion transistor, and a lateral overflow integration capacitor coupled between the second floating diffusion and a bias voltage source. The lateral overflow integration capacitor is further coupled to a pixel reference voltage source through a reset transistor. Operation of the pixel comprises an idle period and an integration period after the idle period. The method also includes configuring the lateral overflow integration capacitor to be either zero-biased or forward-biased during the idle period.

A photoelectric conversion device includes a pixel including a photoelectric conversion unit configured to generate charge by photoelectric conversion, a floating diffusion configured to hold charge transferred from the photoelectric conversion unit, and an output unit configured to output a signal corresponding to an amount of charge held in the floating diffusion, the pixel being enabled to switch a capacitance value of the floating diffusion, and a control unit configured to switch the capacitance value of the floating diffusion. The control unit is configured to set the floating diffusion to a first capacitance value when an absolute value of a power supply voltage supplied to the output unit is a first voltage and set the floating diffusion to a second capacitance value larger than the first capacitance value when the absolute value of the power supply voltage is a second voltage lower than the first voltage.

The utility model describes a pixel circuit and a pixel array of an image sensor, and the pixel circuit comprises a first photosensitive unit which is configured to receive an optical signal in a first exposure duration so as to generate a first image signal; a first floating diffusion node connected to the first photosensitive unit; the first transfer transistor is connected between the first photosensitive unit and the first floating diffusion node; the gain control circuit is connected with the first floating diffusion node so as to collect a second image signal generated under a second exposure time length and collect a third image signal generated under a third exposure time length, and the second exposure time length is smaller than the first exposure time length and smaller than the third exposure time length; the gain control circuit at least stores the third image signal in the overflow unit and then outputs the third image signal; the reset circuit is connected between the gain control circuit and the first power supply voltage; the readout circuit is connected to the first floating diffusion node. According to the pixel circuit, the dynamic range can be enlarged, and the problem of motion artifacts is solved.

A subpixel including at least one second-conductivity-type pinned photodiode layer that forms a p-n junction with a substrate semiconductor layer, at least one floating diffusion region, and at least one transfer gate stack structure. The at least one transfer gate stack structure may at least partially laterally surround the at least one second-conductivity-type pinned photodiode layer with a total azimuthal extension angle in a range from 240 degrees to 360 degrees around a geometrical center of the second-conductivity-type pinned photodiode layer. The at least one transfer gate stack structure may include multiple edges that overlie different segments of a periphery of the at least one second-conductivity-type pinned photodiode layer, and the floating diffusion region includes a portion located between the first edge and the second edge. In addition, multiple transfer gate stack structures and multiple floating diffusion regions may be present in the subpixel.

A control circuitry region of a pixel sensor of a semiconductor device includes a plurality of conversion gain circuits that may be selectively activated and / or deactivated in various combinations to enable a plurality of sequential conversion gain operations to be performed across an exposure operation of the semiconductor device. The control circuitry region may include a first conversion gain circuit and a second conversion gain circuit that are connected to a floating diffusion node of the pixel sensor in parallel. The selectable parallel conversion gain circuits enable sequential conversion gain operations to be performed for the pixel sensor such that the capacitance in the pixel sensor may be gradually increased through the conversion gain operations. Gradually increasing the capacitance in the pixel sensor across the sequential conversion gain operations provides for smaller signal-to-noise ratio (SNR) drops, which enables a low SNR drop to be achieved for the pixel sensor.

An imaging device includes a pixel-circuit and a readout circuit. The pixel-circuit includes a photodetector. The readout circuit is configured to perform a series of iterations, each iteration including (i) accumulating an electrical charge in the photodetector during an integration time, (ii) transferring a portion of the electrical charge accumulated in the photodetector to a floating diffusion, the portion being less than all the electrical charge accumulated in the photodetector, and (iii) coupling a voltage of the floating diffusion to a storage capacitance, to subsequently, in a final iteration, transfer a remaining electrical charge from the photodetector, and to derive an output digital value, indicative of a total energy of the light incident on the photodetector over the series of iterations and the final iteration, from the voltage on the storage capacitance and from the remaining electrical charge transferred in the final iteration.

An optical device and a method of fabricating the same are disclosed. The optical device includes a first die layer and a second die layer. The first die layer includes a first substrate having a first surface and a second surface opposite to the first surface, first and second pixel structures, an inter-pixel isolation structure disposed in the first substrate and surrounding the first and second pixel structures, and a floating diffusion region disposed in the first substrate and between the first and second pixel structures. The second die layer includes a second substrate having a third surface and a fourth surface opposite to the third surface and a pixel transistor group disposed on the third surface of the second substrate and electrically connected to the first and second pixel structures.

An image sensor includes a logic die, including column readout circuits and bitlines connected to the column readout circuits. A sensor die is overlaid on the logic die. The image sensor includes an array of detector elements, each including a sensing circuit on the sensor die, which includes a photodiode, a floating diffusion node a charge sharing transistor coupled between the photodiode and the floating diffusion node, a reset transistor coupled to the floating diffusion node, and a source follower transistor. In each detector element, a pixel circuit on the logic die includes a select transistor, which has an input coupled to the output of the source follower and an output coupled to one of the bitlines. Two current memory circuits are coupled to the input of the select transistor and are configured to sense and output respective signals indicative of levels of noise in the detector element.

Pixels with multiple operating modes (and associated systems, devices, and methods) are disclosed herein. In one embodiment, a pixel arrangement includes a pixel including a first photosensor, a second photosensor, a floating diffusion, a first event vision sensor (EVS) connection coupling the pixel to first EVS readout circuitry and configured to receive first charge from the first photosensor, and a second EVS connection coupling the pixel to second EVS readout circuitry and configured to receive second charge from the second photosensor. The pixel further includes a first transfer transistor selectively coupling the first photosensor to the floating diffusion, a second transfer transistor selectively coupling the first photosensor to the first EVS connection, and a third transfer transistor selectively coupling the second photosensor to the floating diffusion. In some embodiments, the pixel further includes a fourth transfer transistor selectively coupling the second photosensor to the second EVS connection.

An image sensor structure including a substrate, a pixel structure, and a deep trench isolation (DTI) structure is provided. The substrate includes a first side and a second side opposite to each other. The pixel structure includes a transfer transistor, a light sensing device, and a floating diffusion region. The transfer transistor includes a first gate. The first gate is disposed on the first side of the substrate. The light sensing device is disposed in the substrate and is located on one side of the first gate. The floating diffusion region is disposed in the substrate and is located on another side of the first gate. The DTI structure extends into the substrate from the second side of the substrate. The top-view pattern of the floating diffusion region does not overlap the top-view pattern of the DTI structure.

A pixel circuit includes a pixel array and a color filter. The pixel array includes a plurality of pixels arranged in rows and columns, each pixel including four photodiodes, a floating diffusion, and four transfer transistors. The color filter array includes a plurality of color filters each having one of a plurality of colors and disposed over at least one of the pixels. Each of the plurality of pixels is coupled to a first readout circuit, and the plurality of pixels includes (i) a first subset of the pixels not coupled to a second readout circuit and (ii) a second subset of the pixels coupled to the second readout circuit. Floating diffusions of two diagonally arranged pixels are coupled together, and the two diagonally arranged pixels coupled together are disposed underneath color filters of a same color.

An image sensor includes a substrate including a pixel region, a first surface, and a second surface opposite to the first surface, a first photoelectric conversion region in the pixel region, a deep isolation pattern provided to at least partially penetrate the substrate and define the pixel region, a first transfer gate electrode in the pixel region and at least partially vertically overlapped with the first photoelectric conversion region, the first transfer gate electrode including a first upper portion, which protrudes above the first surface of the substrate, and a first lower portion, which is at least partially inserted into the substrate through the first surface of the substrate, a floating diffusion region in the pixel region and at least partially overlapped with the first photoelectric conversion region, and a barrier device isolation pattern between the floating diffusion region and the first transfer gate electrode.

A method of driving a photoelectric conversion apparatus includes a pixel, an output line, and a current source, the pixel including a photoelectric conversion element, a floating diffusion region, and a transfer transistor, the method including setting the transfer transistor to an on state to transfer the charge to the floating diffusion region at a first timing, completing, at a second timing, a comparison of the pixel signal and a threshold voltage, based on the charge transferred to the floating diffusion region at the first timing and performing a first drive to change a connection state between the pixel and the current source from a conductive state to a non-conductive state between the first timing and the second timing.

An image sensor is provided. The image sensor includes: a photoelectric conversion region in a semiconductor substrate; a photocharge collection region provided in the photoelectric conversion region; a floating diffusion region in the semiconductor substrate that is spaced apart from the photocharge collection region along a vertical direction; a charge multiplication region between the photocharge collection region and the floating diffusion region; and a vertical gate electrode which extends into the semiconductor substrate and overlaps the photocharge collection region along the vertical direction. A side surface of the vertical gate electrode is adjacent to the floating diffusion region and the charge multiplication region.

Hybrid image sensors with multiple operating modes are disclosed herein. In one embodiment, a pixel arrangement includes a first photosensor, a first floating diffusion, a second photosensor, a second floating diffusion, and a mode switch. The mode switch can include (a) a first switch selectively coupling the second floating diffusion to the first floating diffusion, and (b) a second switch configured to selectively couple the second floating diffusion to event vision sensor (EVS) readout circuitry. The mode switch can be used to transition the pixel arrangement between (i) a first mode in which the pixel arrangement is controllable to output intensity information corresponding to first light incident on the first photosensor and / or second light incident on the second photosensor, and (ii) a second mode in which the pixel arrangement is controllable to output contrast information corresponding to the first light and / or the second light.