52 results about "Charge retention" patented technology

Electronic device comprising a rechargeable battery and a voltage- or current-controlled power converter (150) for charging the battery, wherein the power converter (150) is designed to provide electrical power at an output voltage V out to charge the battery at an output of the power converter (150) from electrical power at an input voltage V into be derived at an input of the power converter (150), wherein the power converter (150) comprises an inductor (L), a first sub-converter (110) with several first switches (S1, S2, S3, S4) and a first capacitor cell (C1), and a second sub-converter (120) with several second switches (S5, S6, S7, S8) and a second capacitor cell (C2); wherein the power converter (150) comprises only a single inductor for the first sub-converter and for the second sub-converter, and a controller; wherein the controller is configured to control the several first and the several second switches such that the first and the second sub-converter are operated in a nested manner, and wherein a commutation cycle of the power converter comprises: - a first phase, during which the first capacitor cell and the inductor are connected in series between the input and the output of the power converter (150), and during which the second capacitor cell and the inductor are connected in series in parallel with the output of the power converter (150); - a second phase, during which the first capacitor cell and the inductor are connected in series in parallel with the output of the power converter (150), and during which the second capacitor cell and the inductor are connected in series between the input and the output of the power converter (150); and - a third phase, during which the first and second capacitor cells are decoupled from the output of the power converter (150), during which the charge of the first and second capacitor cells remains unchanged, and during which the inductor is arranged between the input and the output of the power converter (150) or is connected in parallel to the output of the power converter (150), wherein the controller is designed to control the multiple first and second switches in such a way that the power converter is operated in the third phase following the first phase and / or following the second phase within one commutation cycle, and wherein The controller is designed to do the following: - Determining an output current I out at the end of the first phase and / or at the end of the second phase; - Control the several first and second switches during the third phase such that the inductor is then arranged between the input and the output of the power converter (150) when the output current I out at the end of the first phase and / or at the end of the second phase less than a reference current I ref is; and - Control the several first and second switches during the third phase such that the inductor is then connected in parallel to the output of the power converter (150) when the output current I out at the end of the first phase and / or at the end of the second phase greater than the reference current I ref is.

An imaging element includes a plurality of pixels each having a photoelectric conversion unit and a charge holding unit configured to accumulate charges generated in the photoelectric conversion unit, a voltage holding unit configured to hold a voltage signal according to the charges of the charge holding unit, a source follower unit configured to transfer the voltage signal to the voltage holding unit, a current source configured to drive the source follower unit, and a current source control unit configured to control the current source, wherein the current source control unit transfers the charges generated in the photoelectric conversion unit to the charge holding unit all at once, and the source follower unit and the current source are sequentially connected to sequentially transfer the voltage signal according to the charges accumulated in the charge holding unit to the voltage holding unit.

The present invention provides a solid-state image sensor that can achieve imaging using a global electronic shutter, obtain a focus detection signal, and increase the aperture ratio, as well as an imaging device using the same. [Solution] The solid-state image sensor comprises a plurality of pixels PX, each of which is provided with a plurality of photoelectric conversion units PDa, PDb that generate and store charge in accordance with incident light; a first charge holding unit CH to which the charge is transferred and held; a plurality of first switches TXa1, TXb1 that electrically connect and disconnect each of the plurality of photoelectric conversion units PDa, PDb to the first charge holding unit CH; a second charge holding unit FD to which the charge is transferred and held from the first charge holding unit CH; a second switch TX2 that electrically connects and disconnects the first charge holding unit CH to the second charge holding unit FD; and an amplification unit AMP that outputs a signal corresponding to the charge held in the second charge holding unit FD.

An imaging device with a semiconductor substrate, a photoelectric converter, an electric charge holder, and a first light-blocking section. The semiconductor substrate includes a pixel array section of unit pixels. The first light-blocking section includes a first horizontal light-blocking part and a first vertical light-blocking part that is orthogonal to the first horizontal light-blocking part. The first vertical light-blocking part includes a first row light-blocking part and a first column light-blocking part. The first vertical light-blocking part is provided for each of the unit pixels positioned every other column and in a 45-degree oblique direction. The first horizontal light-blocking part has, in plan view, an end at or in the vicinity of a position connecting one and another of intersections of the first row light-blocking parts and the first column light-blocking parts that are provided for the respective unit pixels positioned every other column and in the 45-degree oblique direction.

To facilitate connection between a gate electrode of a charge transfer section and wiring. The semiconductor apparatus includes a connection region, a photoelectric conversion section, a charge holding section, and a charge transfer section. The connection region is on the surface of the semiconductor substrate and to which wiring is connected. The photoelectric conversion section and the charge holding section are in the semiconductor substrate. The charge transfer section includes a MOS transistor including a gate electrode including a vertical electrode section disposed in the semiconductor substrate and a flat plate electrode section embedded in a surface of the semiconductor substrate and having a size in a plane direction of the semiconductor substrate different from that of the vertical electrode section and having wiring connected to an upper surface, and transfers a charge of the photoelectric conversion section to the charge holding section.

The present disclosure relates to an organic light emitting diode and an organic light emitting device having the diode. An organic light emitting diode including a plurality of delayed fluorescent materials with specific energy levels and an organic light emitting device including the diode is disclosed. When the plurality of delayed fluorescent materials with specific energy levels are applied in an emitting material layer, it is possible to minimize the energy loss or exciton quenching during luminescent process, to prevent the diode from reducing lifetime caused by the exciton quenching, and to make charges being injected into the emitting material layer in balance. When the emitting material layer includes other luminous material having a narrow FWHM, the organic light emitting diode can enhance its color purity.

The purpose of the present invention is to improve the signal charge transfer capability. A light detection device includes: a semiconductor layer having a first face portion and a second face portion on opposite sides to each other; a photoelectric conversion unit that is provided in the semiconductor layer and performs photoelectric conversion on light incident from the second surface side of the semiconductor layer; a charge holding portion provided in the semiconductor layer and holding a signal charge obtained by photoelectric conversion in the photoelectric conversion portion; and a transfer transistor including a gate electrode and transferring a signal charge obtained by photoelectric conversion in the photoelectric conversion portion to the charge holding portion. The gate electrode includes a first electrode portion extending from a first face portion side to a second face portion side of the semiconductor layer, and a second electrode portion provided in the first electrode portion separately from the first face portion of the semiconductor layer and having an outer shape expanded more in plan view than the first electrode portion.

The invention discloses a storage-like enhanced GaN-based HEMT (High Electron Mobility Transistor) based on an in-situ oxidation gradient barrier and a preparation method thereof, which combines an optimized AlGaN barrier layer design of a gradient Al component and an in-situ oxidation technology, realizes a novel charge storage structure and well retains heterojunction characteristics at the same time. Specifically, a charge storage medium lamination layer is formed through self-saturation in-situ oxidation, an Al-rich component barrier is oxidized to form an AlON charge tunneling layer, a Ga-rich component barrier is oxidized to form a GaON charge storage layer, and part of the high Al component barrier is reserved to maintain higher two-dimensional electron gas concentration, so that the process complexity is reduced, and the efficiency is improved. The problems of migration rate reduction and two-dimensional electron gas concentration reduction caused by etching damage are avoided, a high-quality medium interface is formed through in-situ oxidation, and the threshold stability of the device is improved; the Al2O3 charge blocking layer prevents stored electrons from leaking to the grid electrode, and better charge retention characteristics can be obtained.

The invention provides an indoor logistics transportation robot based on electrostatic repulsion and a control method, and the structure of the robot comprises a stator unit array which is laid on the indoor ground and is formed by arranging a plurality of annular electrode units with the same structure in a matrix; the rotor aircraft is used for bearing articles, and a main body of the rotor aircraft is an electret film which is subjected to polarization treatment and has charge retention capability; and the control system is electrically connected with the stator unit array and is used for providing modulated high-voltage electric signals for the annular electrode units. Pure electric field driving is adopted, no mechanical contact exists between the stator and the rotor, and the zero-noise and zero-abrasion transportation process is achieved; a traditional voltage regulator voltage regulation mode is abandoned, a square wave duty ratio modulation technology is adopted, the response speed is high, and the control precision is high; and in combination with four-quadrant partition control, flexible planar omnidirectional movement and path planning are realized.

The application relates to the technical field of data storage, and discloses a data storage integrity verification method and system for a solid-state memory. The method comprises the following steps: collecting read-write instructions, programming and erasing cycle times, and charge retention times; performing voltage drift analysis based on the read-write instructions to obtain drift grouping data, and counting flip frequency distribution; performing storage block degradation analysis by combining the flip frequency distribution, the programming and erasing cycle times, and the charge retention times, to obtain a high-risk area; extracting a risk voltage drift amount, counting read-write interference amounts, and combining the risk voltage drift amount and the read-write interference amounts into an error feature vector; identifying a hard error type through a support vector machine model; performing reliability determination based on the hard error type and the flip frequency distribution, generating a check trigger signal, and positioning an accurate bit flip address; combining a data importance degree library to evaluate a repair priority sequence; performing data repair, periodically checking a repaired successful area, and obtaining an integrity verification report. The method improves the reliability of a storage system.

The invention provides a preparation method of a non-volatile memory ONO structure with low chlorine element content. The method comprises the following steps: growing an oxide layer on the surface of a substrate by using an in-situ water vapor generation process; nitriding the oxide layer by using a plasma nitriding process to form a composite structure of a tunneling oxide layer and a step layer; the composite structure is subjected to annealing treatment after nitriding; and sequentially forming a charge trapping layer and a barrier insulating layer on the composite structure by using a deposition process. According to the invention, a novel combined process is used for replacing a traditional low-pressure furnace tube process to grow the underlying medium, so that the chlorine content in an ONO structure, especially in a tunneling layer and a step layer, is remarkably reduced, and the defect level is reduced, thereby effectively improving the charge retention capability, durability and reliability of the nonvolatile memory.

Dynamic range expansion in a solid-state imaging element using a global shutter is disclosed. In one example, a solid-state imaging element includes a first transfer transistor, a second transfer transistor, and an overflow gate. The first transfer transistor transfers a charge from a photoelectric conversion element to a charge holding section. The second transfer transistor transfers a charge from one of the charge holding section and the photoelectric conversion element to a first floating diffusion layer. The overflow gate causes a second floating diffusion layer to hold a charge having overflowed from the photoelectric conversion element.

The invention relates to the technical field of batteries, and discloses a nickel-zinc battery gel electrolyte capable of improving high-temperature performance and a battery preparation method, which comprises the following steps: mixing a monomer mixed solution containing potassium acrylate, polyethylene glycol methyl ether methacrylate, a cross-linking agent and an initiator with a mixed alkali solution system to prepare a pre-polymerized solution; assembling the positive plate, the negative plate and the diaphragm, and injecting the prepolymerization liquid; and heating to initiate in-situ polymerization to form the gel electrolyte. The functional monomer PMEM is introduced to construct a three-dimensional polymer network with a flexible polyether side chain together with KAA, the network structure effectively binds water molecules, and side reactions such as positive electrode material structure collapse, oxygen evolution and zinc negative electrode corrosion caused by too high activity of the water molecules at high temperature are inhibited; meanwhile, PMEM ether oxygen atoms slow down diffusion and dissolution of the zinc negative electrode in the storage process; according to the prepared nickel-zinc battery, the high-temperature cycle life, the high-temperature floating charge life and the high-temperature charge retention rate are improved, and the problem that an existing nickel-zinc battery is poor in high-temperature performance is solved.

To reduce the size of a light detection element. The light detection element includes: a pixel including: a photoelectric conversion portion disposed on a semiconductor substrate and configured to generate a charge by performing photoelectric conversion of incident light; a first charge holding portion configured to hold a charge; a charge transfer portion configured to transfer charge to the first charge holding portion; a signal generating section configured to generate a signal corresponding to the charge held in the first charge holding section; and a second charge holding portion formed of a capacitor element formed in an insulating layer, the insulating layer being included in a wiring region adjacent to the semiconductor substrate, the second charge holding portion being coupled to the first charge holding portion. The capacitance element includes a lower electrode disposed adjacent to an inner wall of an opening formed in a capacitance element insulating layer in which the capacitance element is formed, an insulating film formed in a shape covering the lower electrode, and an upper electrode formed in a shape facing the lower electrode within the opening across the insulating film therebetween. The lower electrode is connected to a lower layer wiring disposed in a lower layer of the wiring area. The upper electrode is connected to an upper layer wiring disposed in an upper layer of the wiring region.

According to the invention, the image quality performance is improved. The photodetection device includes: a semiconductor layer having a first surface portion and a second surface portion on opposite sides to each other in one direction; a photoelectric conversion region provided in the semiconductor layer adjacent to the isolation region in plan view, the photoelectric conversion region having a rectangular planar shape; a photoelectric conversion unit provided in the photoelectric conversion region; and a transfer transistor that is provided in the photoelectric conversion region and transfers the signal charge obtained by photoelectric conversion by the photoelectric conversion unit to a charge holding unit. The charge holding portion is provided in the isolation region so as to span a center line that is orthogonal to an outer peripheral edge portion connecting both corner portions of the photoelectric conversion region in a plan view and passes through a center portion of the photoelectric conversion region.

There is provided a light detection device, including: a first pixel, including: a first photoelectric conversion device that accumulates signal charges corresponding to an amount of incident light, a first charge holding unit that holds the signal charges accumulated by the first photoelectric conversion device and noise charges caused by parasitic light intensity, and a first discharge transistor; a second pixel, including: a second photoelectric conversion device that accumulates signal charges corresponding to an amount of incident light, a second charge holding unit that holds the noise charges without holding the signal charges accumulated by the second photoelectric conversion device, and a second discharge transistor; and a wire connecting a gate of the first transistor to a gate of the second transistor.

To prevent a decrease in a saturation charge when a phase difference signal is generated. A pixel includes a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge. An intra-pixel separator separates the plurality of photoelectric conversion sections. An overflow path in the intra-pixel separator transfers charges overflowed in the plurality of photoelectric conversion sections to each other. An overflow gate in the pixel and adjusts a potential of the overflow path. A pixel separator is disposed at a boundary between the pixels. A charge holding section holds the generated charge. A charge transfer section is disposed one-by-one for the plurality of photoelectric conversion sections and transfers the generated charge to the charge holding section. An image signal generating section generates an image signal on the basis of the generated charge.

Provided are an imaging control device, an imaging device, an imaging control method, and an imaging control program.　The imaging control device comprises a processor that controls an imaging element including a plurality of pixels. Each of the pixels include a photoelectric conversion unit, a charge holding unit that holds a charge sent from the photoelectric conversion unit, and a conversion unit that converts the charge into a signal. The processor: performs a first control for sending to the conversion unit a charge held in the charge holding unit of each pixel in a first region among the plurality of pixels; performs a second control for sending to the conversion unit a charge held in the charge holding unit of each pixel in a second region among the plurality of pixels; performs, between the first control and the second control, a third control for sending to the conversion unit a charge held in the charge holding unit of each pixel in the first region; and performs a detection process for detecting, on the basis of a signal obtained from the conversion unit by means of the third control, noise occurring in the charge holding unit.

To provide an imaging device capable of further suppressing noise in a pixel signal. An imaging device includes: a semiconductor substrate (30) that includes a photoelectric conversion portion (31) configured to photoelectrically convert incident light, or a charge holding portion (32) configured to hold charge photoelectrically converted by the photoelectric conversion portion; a field effect transistor provided on the photoelectric conversion portion, or on the semiconductor substrate near the charge holding portion; a contact plug (26) that extends in a direction normal to one main surface of the semiconductor substrate from a gate electrode (25) of the field effect transistor; and a projecting portion (27) that extends in an in-plane direction of the one main surface of the semiconductor substrate from the contact plug.

The present invention relates to the technical field of cement-based batteries for construction. Disclosed are a cement-based structural battery integrating load-bearing and energy-storage functions, and a preparation method therefor. The method comprises: 1) mixing a polymer solution, cement, and fine sand to obtain a polymer-cement paste electrolyte; wherein the polymer solution is obtained by dissolving a polymer and a strong alkali in water, or by dissolving a polymer, a strong alkali, and a sulfide in water, or by dissolving a polymer, a strong alkali, an inorganic sulfide, and a chemical cross-linking agent in water; and the polymer is one or more of PVA or PAA; 2) preparing a positive electrode sheet; 3) preparing a negative electrode sheet; and 4) placing the polymer-cement paste electrolyte on a surface of the positive electrode sheet and a surface of the negative electrode sheet, then sequentially stacking the positive electrode sheet and the negative electrode sheet, and placing the stack in a mold for curing and allowing the stack to stand, so as to obtain a cement-based structural battery integrating load-bearing and energy-storage functions. The cement-based structural battery of the present invention has high mechanical load-bearing strength, high capacity, stable charge retention, and excellent cycling performance.

A method for estimating the capacity of a battery stack, wherein the method comprises: Charge throughput data is received, describing the amount of charge transferred into or out of the battery stack; the received charge throughput data are integrated; the integrated received charge throughput data are stored in a first data basket, which is assigned to increasing charge throughput data where a charge quantity is transferred into the battery stack, or in a second data basket, which is assigned to decreasing charge throughput data where a charge quantity is transferred out of the battery stack, based on a determination of whether the received charge throughput data includes increasing charge throughput data or decreasing charge throughput data; voltage-based state-of-charge movement data is received, which describes a movement of a state of charge of the battery stack based on a voltage of the battery stack; the received voltage-based charge state movement data are integrated; the integrated voltage-based state-of-charge movement data are stored in a third data basket, which is assigned to increasing voltage-based state-of-charge movement data where the state of charge of the battery stack increases, or in a fourth data basket, which is assigned to decreasing voltage-based state-of-charge movement data where the state of charge of the battery stack decreases, based on a determination of whether the received voltage-based state-of-charge movement data includes increasing voltage-based state-of-charge movement data or decreasing voltage-based state-of-charge movement data; an estimated charging capacity of the battery stack, determined from data during a charging process of the battery stack, based on data stored in the first data basket and the third data basket; and an estimated discharge capacity of the battery stack, determined from data during a discharge process of the battery stack, based on data stored in the second data basket and the fourth data basket.

The present invention provides an electrophotographic magnetic carrier that exhibits excellent charge imparting and charge retention capabilities even in high-temperature and high-humidity environments, as well as high durability and high-quality development capabilities, a two-component developer, and a method for manufacturing the magnetic carrier. [Solution] The magnetic carrier comprises a carrier core and a resin coating layer covering the surface of the carrier core, and can charge toner by friction. The carrier core has fine particles with a volume-average primary particle diameter of 1 μm or less in the recesses on its surface. The amount of fine particles present on the surface of the carrier core is 2% to 20% based on the number of particles when the particle size distribution of the carrier core is measured.

Provided is a technology that enables reliable transfer of signal electric charges. This photodetection device includes a semiconductor layer having a first surface and a second surface located on opposite sides of the semiconductor layer in a thickness direction, a photoelectric conversion part provided in the semiconductor layer, first and second electric charge retaining parts provided adjacent to the first surface of the semiconductor layer, a first transfer transistor that transfers signal electric charges generated by photoelectric conversion in the photoelectric conversion part to the first electric charge retaining part, and a second transfer transistor that transfers the signal electric charges transferred by the first transfer transistor and retained in the first electric charge retaining part to the second electric charge retaining part. Then, the first electric charge retaining part includes a semiconductor region provided adjacent to the first surface of the semiconductor layer, and an electrode placed on the semiconductor region with an insulation film interposed between the electrode and the semiconductor region. Then, an upstream side of the electrode in a direction in which the signal electric charges are transferred is narrower than the downstream side of the electrode in the direction in which the signal electric charges are transferred.

An image capturing apparatus comprises a plurality of pixels and a correction unit. Each pixel includes: a photoelectric converter; first and second charge holding sections to hold charges obtained with first and second charge accumulation periods in a first frame; third and fourth charge holding sections to hold charges obtained with the first and second charge accumulation periods in a second frame; a first floating diffusion portion for reading out charges held in the first and second charge holding sections in the second frame; and a second floating diffusion portion for reading out charges held in the third and fourth charge holding sections in the first frame. The correction unit corrects a difference between signal levels of signals read out via the first and second floating diffusion portions based on a difference between capacitances of the first and second floating diffusion portions.

The invention relates to the field of data storage and backup, in particular to a TF memory card data acquisition method and system, and the method comprises the steps: collecting the environment temperature and the electromagnetic interference intensity in real time after a TF card is powered on; flash memory programming parameters are adjusted according to temperature, a charge retention mechanism is started at high temperature, and threshold voltage is optimized at low temperature; enhanced link coding is started in a strong electromagnetic environment, and dual-copy metadata storage is generated after data partitioning; generating an enhanced LDPC check code and a CRC-64 check code for the block data, packaging the check code into a write-in unit, and synchronously writing the write-in unit into a flash memory; if the writing is interrupted, retrying or switching the standby block, and carrying out atomized updating on the metadata by adopting a mode of'standby first and master second '; periodically starting charge refreshing, and repairing leakage data; detecting block states in real time, marking bad blocks and migrating data to standby blocks; voltage and impact strength are monitored in real time, an emergency power supply is started when abnormity occurs, and semi-finished data and metadata are preserved preferentially; and after restarting, recovering the data and updating the index.

Provided are an image-capturing control device, an image-capturing device, an image-capturing control method, and an image-capturing control program.　The image-capturing control device comprises a processor that controls an image-capturing element including a plurality of pixels. The plurality of pixels each include a photoelectric conversion unit, a charge-holding unit that holds charges transferred from the photoelectric conversion unit, and a conversion unit that converts the charges into a signal. The processor performs first control involving causing the charge-holding unit to hold charges generated in the photoelectric conversion unit and ending exposure of the plurality of pixels, performs second control on a first pixel among the plurality of pixels, and performs third control on a second pixel among the plurality of pixels. The second control involves transferring the charges in the charge-holding unit to the conversion unit after a first time elapses from the end of the exposure. The third control involves discharging the charges in the charge-holding unit during a period from the end of the exposure until the first time elapses, and transferring said charges in the charge-holding unit to the conversion unit after the first time elapses from the end of the exposure.

A light detection device according to an embodiment comprises: a photoelectric conversion unit that is provided on a substrate and generates electric charge corresponding to incident light by photoelectric conversion; a charge holding unit that is provided on the substrate and holds the electric charge; and a charge transfer unit that is provided on the substrate and transfers the electric charge from the photoelectric conversion unit to the charge holding unit. The charge transfer unit includes a vertical gate electrode. The vertical gate electrode includes a vertical electrode portion extending in the thickness direction of the substrate, and a lateral electrode portion extending in a direction intersecting the thickness direction. The length in plan view of the vertical electrode portion is at least twice the thickness in cross-sectional view of the lateral electrode portion.

Provided are an imaging device, a control method, and a control program capable of reducing PLS noise while suppressing the effects thereof on other functions.　The imaging device comprises: an electronic ND filter (13) capable of controlling the transmittance of light incident through an imaging lens (11); an imaging element (14) having a plurality of pixels; and a system control unit (16). The imaging element (14) can perform simultaneous readout control for simultaneously exposing the plurality of pixels and reading out charges accumulated in the plurality of pixels to a charge holding unit (52). The system control unit (16) performs transmittance decrease control (dimming control = ON) for decreasing the transmittance of the electronic ND filter (13) after the simultaneous readout control, and performs transmittance increase control (dimming control = OFF) for increasing the transmittance of the electronic ND filter (13) during a readout (43) period in which the charges read out to the charge holding unit (52) are read out as an image signal.

Provided is a photodetection device capable of suppressing deterioration of a captured image. A photodetection device includes: a semiconductor layer including a plurality of cell regions arranged in a row direction and a column direction in a pixel region, one surface of the semiconductor layer being an element formation surface, and another surface of the semiconductor layer being a light incident surface; and a deflection layer provided at a position facing the light incident surface of the cell region or provided in a portion of the cell region on the light incident surface side. A photoelectric conversion element, a light shielding film extending along a direction perpendicular to a thickness direction of the semiconductor layer, and a charge holding unit located closer to the element formation surface than the light shielding film in a thickness direction of the semiconductor layer are provided in the cell region. The deflection layer includes, for each of the cell regions, a first region having a first refractive index and a second region having a second refractive index higher than the first refractive index at different positions in plan view. The second region is located at a position overlapping the light shielding film in plan view.

To provide an optical detection device and electronic equipment capable of achieving pixel miniaturization. [Solution] An embodiment of the photodetector of the present disclosure includes a first substrate including a first semiconductor layer having a photoelectric conversion unit and a charge holding unit; a second substrate including a second semiconductor layer having a readout circuit and a wiring layer on a second surface opposite to the first surface facing the first semiconductor layer, which outputs a pixel signal based on the charge output from the pixel; a through-wiring that penetrates the second semiconductor layer and electrically connects the charge holding unit and the readout circuit; a first transistor that constitutes the readout circuit and is electrically connected to the charge holding unit via the through-wiring; a first wiring provided in the wiring layer that electrically connects the through-wiring and a first gate electrode; a second wiring provided in the same layer as the first wiring and electrically connected to a terminal whose voltage does not change in conjunction with a change in the voltage of the charge holding unit; and a third wiring provided in the same layer as the first and second wirings and disposed between the first and second wirings, which is electrically connected to a first source region.