141 results about "Charge retention" patented technology

To ensure stable transfer capability. A photodetector includes a semiconductor layer having a first surface and a second surface located on opposite sides, a photoelectric conversion unit in the semiconductor layer that converts, through photoelectric conversion, light incident from a second surface side of the semiconductor layer, a charge holding unit on a first surface side of the semiconductor layer, a transfer transistor that includes a gate electrode and that transfers signal charge generated by the photoelectric conversion unit through the photoelectric conversion to the charge holding unit, and an isolation region on the first surface side of the semiconductor layer. The gate electrode includes a head on the first surface side of the semiconductor layer and legs that extend from the head in a thickness direction of the semiconductor layer and that are in the isolation region adjacent to the semiconductor layer via a gate insulating film.

To provide a method of eliminating charges in a potential control layer when recovering charges simpler and easier than a new charge carrier that can carry high charges at a low potential in an electrostatic generator.SOLUTION: An eliminated charge holder with the same type and without a potential control layer is provided behind a charge carrier 7 in a traveling direction, and is charged by a charging source 8 with a polarity different from and with an equal amount as charges present in a potential control layer 73 of the charge carrier, and the charges are added to the potential control layer 73 to make a charge amount in the potential control layer 73 zero. Thereby, the charges carried in a state in which a potential of the charge carrier 7 is enhanced can be safely recovered in a simple method.SELECTED DRAWING: Figure 3

An energy storage device includes a charge storage assembly, an auxiliary storage element, and a charge control circuit. The charge storage assembly includes an array of supercapacitors coupled in series, a plurality of batteries, and a charge retention circuit. Each of the plurality of batteries is electrically coupled to a corresponding supercapacitor in the array of supercapacitors. The charge retention circuit is configured to maintain a charge state of at least one supercapacitor in the array of supercapacitors when the at least one supercapacitor is in an idle state. A charge control circuit is configured to selectively transfer charge between the at least one supercapacitor in the array of supercapacitors and the auxiliary storage element.

A solid-state imaging device includes a light-receiving surface, a plurality of pixels each including a photoelectric conversion section that photoelectrically converts light incident through the light-receiving surface, and a separation section that electrically and optically separates each photoelectric conversion section. Each of the pixels includes a charge-holding section that holds charges transferred from the photoelectric conversion section, a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, and transfers charges from the photoelectric conversion section to the charge-holding section, and a light-blocking section disposed in a layer between the photoelectric conversion section and the charge-holding section. A plurality of the vertical gate electrodes are electrically coupled together in a plurality of first pixels adjacent to each other among the plurality of pixels.

An imaging element of one embodiment of the present disclosure includes: a first semiconductor substrate having first and second surfaces opposed to each other and including a plurality of pixels, a plurality of projections on the first surface with respect to each of the plurality of pixels; a plurality of photoelectric converters embedded in the first semiconductor substrate with respect to each pixel; a plurality of charge holding units on respective upper surfaces of the plurality of projections and holds electric; a second semiconductor substrate stacked on the side of the first surface of the first semiconductor substrate with one or more pixel circuits that generate a pixel signal based on an electric charge generated by each of the plurality of photoelectric converters; and a gate of a transfer transistor that is provided around the plurality of projections and transfers the electric charges held in the charge holding units to the pixel circuits.

An energy storage device includes a charge storage assembly, an auxiliary storage element, and a charge control circuit. The charge storage assembly includes an array of supercapacitors coupled in series, a plurality of batteries, and a charge retention circuit. Each of the plurality of batteries is electrically coupled to a corresponding supercapacitor in the array of supercapacitors. The charge retention circuit is configured to maintain a charge state of at least one supercapacitor in the array of supercapacitors when the at least one supercapacitor is in an idle state. A charge control circuit is configured to selectively transfer charge between the at least one supercapacitor in the array of supercapacitors and the auxiliary storage element.

Electronic device comprising a rechargeable battery and a voltage- or current-controlled power converter (150) for charging the battery, wherein the power converter (150) is designed to provide electrical power at an output voltage V out to charge the battery at an output of the power converter (150) from electrical power at an input voltage V into be derived at an input of the power converter (150), wherein the power converter (150) comprises an inductor (L), a first sub-converter (110) with several first switches (S1, S2, S3, S4) and a first capacitor cell (C1), and a second sub-converter (120) with several second switches (S5, S6, S7, S8) and a second capacitor cell (C2); wherein the power converter (150) comprises only a single inductor for the first sub-converter and for the second sub-converter, and a controller; wherein the controller is configured to control the several first and the several second switches such that the first and the second sub-converter are operated in a nested manner, and wherein a commutation cycle of the power converter comprises: - a first phase, during which the first capacitor cell and the inductor are connected in series between the input and the output of the power converter (150), and during which the second capacitor cell and the inductor are connected in series in parallel with the output of the power converter (150); - a second phase, during which the first capacitor cell and the inductor are connected in series in parallel with the output of the power converter (150), and during which the second capacitor cell and the inductor are connected in series between the input and the output of the power converter (150); and - a third phase, during which the first and second capacitor cells are decoupled from the output of the power converter (150), during which the charge of the first and second capacitor cells remains unchanged, and during which the inductor is arranged between the input and the output of the power converter (150) or is connected in parallel to the output of the power converter (150), wherein the controller is designed to control the multiple first and second switches in such a way that the power converter is operated in the third phase following the first phase and / or following the second phase within one commutation cycle, and wherein The controller is designed to do the following: - Determining an output current I out at the end of the first phase and / or at the end of the second phase; - Control the several first and second switches during the third phase such that the inductor is then arranged between the input and the output of the power converter (150) when the output current I out at the end of the first phase and / or at the end of the second phase less than a reference current I ref is; and - Control the several first and second switches during the third phase such that the inductor is then connected in parallel to the output of the power converter (150) when the output current I out at the end of the first phase and / or at the end of the second phase greater than the reference current I ref is.

A plurality of pixel circuits are arranged in a row direction and a column direction. Each of the pixel circuits includes a photoelectric conversion circuit for light from a subject. Signal charge of the photoelectric conversion circuit is transferred to a charge holding circuit and is discharged via an overflow gate (OFG). A signal processing substrate includes a plurality of signal holding circuits for the plurality of pixel circuits. The signal holding circuit includes a holding capacity circuit that holds a voltage signal or signal charge transferred from the charge holding circuit. Driving for converting signals of the holding capacity circuit into digital signals in a row-sequential manner and outputting the digital signals is performed in a period of intermittent charge accumulation in which transfer and discharge of charge from the photoelectric conversion circuit to the charge holding circuit are alternately performed.

The charge transfer characteristic is improved. The light detection device includes: a semiconductor layer; and a photoelectric conversion region provided in the semiconductor layer to be separated by the separation region. The photoelectric conversion region includes: a photoelectric conversion portion including a first semiconductor region of a first conductivity type, and provided in the semiconductor layer; a second semiconductor region of a second conductivity type provided between the partition region and the first semiconductor region; a charge holding section of a first conductivity type provided adjacent to the partition region in plan view and overlapping the second semiconductor region on the first surface side of the semiconductor layer; and a transfer transistor provided on the first surface side of the semiconductor layer, and transferring the signal charge photoelectrically converted by the photoelectric conversion portion to the charge holding portion. The separation region includes a fixed charge film having a positive fixed charge. In an interface between the semiconductor layer and the separation region, the fixed charge film is provided closer to the second surface side than at least the charge holding portion.

Provided are: an electret material having high charge retention and stretchability; and a skin-attached electret environmental power generator using the electret material. A perfluoroelastomer containing iodine and / or bromine or a crosslinked elastomer obtained by crosslinking the elastomer is used as the electret material. These materials are stretchable and can form an electret by being charged by soft X-rays. In addition, the electret is formed on one of two comb-shaped electrodes arranged in a manner that the electrodes are parallel to each other, and a skin-attached electret environment power generator is formed.

A solid-state imaging device having a plurality of pixels (10), each pixel (10) comprising: - a photoelectric conversion section (21) of a second conductivity type arranged in a surface layer portion of a surface of a semiconductor substrate (20) of a first conductivity type and converting light incident on the surface into an electric charge; - a charge holding section (22) of a second conductivity type which stores the electric charge generated in the photoelectric conversion section (21) and is arranged in the semiconductor substrate (20); - a multiplication gate electrode (31) capacitively coupled to the charge holding section (22) and disposed on the semiconductor substrate (20) via an insulating film (34); and - a cargo barrier section (26) which: - is arranged between the charge holding section (22) and the insulating film (34) at a position where the multiplication gate electrode (31) and the charge holding section (22) are capacitively coupled, - has a first conductivity type with a higher impurity concentration than the semiconductor substrate (20), - causes the charge holding section (22) to hold the electric charge until an electric field in a depth direction of the semiconductor substrate (20) reaches an electric field capable of avalanche multiplication when a voltage is applied to the multiplication gate electrode (31), and - the avalanche multiplication of the electric charge in the depth direction is generated when a predetermined voltage is applied to the multiplication gate electrode (31).

An imaging element includes a plurality of pixels each having a photoelectric conversion unit and a charge holding unit configured to accumulate charges generated in the photoelectric conversion unit, a voltage holding unit configured to hold a voltage signal according to the charges of the charge holding unit, a source follower unit configured to transfer the voltage signal to the voltage holding unit, a current source configured to drive the source follower unit, and a current source control unit configured to control the current source, wherein the current source control unit transfers the charges generated in the photoelectric conversion unit to the charge holding unit all at once, and the source follower unit and the current source are sequentially connected to sequentially transfer the voltage signal according to the charges accumulated in the charge holding unit to the voltage holding unit.

The present invention provides a solid-state image sensor that can achieve imaging using a global electronic shutter, obtain a focus detection signal, and increase the aperture ratio, as well as an imaging device using the same. [Solution] The solid-state image sensor comprises a plurality of pixels PX, each of which is provided with a plurality of photoelectric conversion units PDa, PDb that generate and store charge in accordance with incident light; a first charge holding unit CH to which the charge is transferred and held; a plurality of first switches TXa1, TXb1 that electrically connect and disconnect each of the plurality of photoelectric conversion units PDa, PDb to the first charge holding unit CH; a second charge holding unit FD to which the charge is transferred and held from the first charge holding unit CH; a second switch TX2 that electrically connects and disconnects the first charge holding unit CH to the second charge holding unit FD; and an amplification unit AMP that outputs a signal corresponding to the charge held in the second charge holding unit FD.

An imaging device with a semiconductor substrate, a photoelectric converter, an electric charge holder, and a first light-blocking section. The semiconductor substrate includes a pixel array section of unit pixels. The first light-blocking section includes a first horizontal light-blocking part and a first vertical light-blocking part that is orthogonal to the first horizontal light-blocking part. The first vertical light-blocking part includes a first row light-blocking part and a first column light-blocking part. The first vertical light-blocking part is provided for each of the unit pixels positioned every other column and in a 45-degree oblique direction. The first horizontal light-blocking part has, in plan view, an end at or in the vicinity of a position connecting one and another of intersections of the first row light-blocking parts and the first column light-blocking parts that are provided for the respective unit pixels positioned every other column and in the 45-degree oblique direction.

To facilitate connection between a gate electrode of a charge transfer section and wiring. The semiconductor apparatus includes a connection region, a photoelectric conversion section, a charge holding section, and a charge transfer section. The connection region is on the surface of the semiconductor substrate and to which wiring is connected. The photoelectric conversion section and the charge holding section are in the semiconductor substrate. The charge transfer section includes a MOS transistor including a gate electrode including a vertical electrode section disposed in the semiconductor substrate and a flat plate electrode section embedded in a surface of the semiconductor substrate and having a size in a plane direction of the semiconductor substrate different from that of the vertical electrode section and having wiring connected to an upper surface, and transfers a charge of the photoelectric conversion section to the charge holding section.

An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

The present disclosure relates to an organic light emitting diode and an organic light emitting device having the diode. An organic light emitting diode including a plurality of delayed fluorescent materials with specific energy levels and an organic light emitting device including the diode is disclosed. When the plurality of delayed fluorescent materials with specific energy levels are applied in an emitting material layer, it is possible to minimize the energy loss or exciton quenching during luminescent process, to prevent the diode from reducing lifetime caused by the exciton quenching, and to make charges being injected into the emitting material layer in balance. When the emitting material layer includes other luminous material having a narrow FWHM, the organic light emitting diode can enhance its color purity.

An imaging system includes a plurality of pixels, each pixel including: a photoelectric conversion unit; two or more charge holding units; a transfer unit for transferring the electric charge from the photoelectric conversion unit to the charge holding units; a charge discharge unit for discharging the electric charge in the photoelectric conversion unit; and a read unit for reading a signal, and further includes a control unit for performing batch drive control of simultaneously driving at least one of the transfer units and the charge discharge units for the plurality of pixels, and performing the photoelectric conversion during two or more different exposure periods in one frame period and controlling one of times for reading signals in accordance with electric charges accumulated in each exposure period not to overlap the timing for the batch drive control.

The present disclosure relates to a liquid crystal compound, a preparation method therefor, and a use thereof. The liquid crystal compound provided by the present disclosure has relatively large negative dielectric anisotropy and the characteristics of high clearing point, relatively high optical anisotropy, moderate rotational viscosity, and liquid crystal miscibility, exhibits excellent low-temperature working effect, and shows good properties such as thermal stability, chemical stability, optical stability, and mechanical properties. Therefore, the driving voltage of a liquid crystal display device in which the liquid crystal compound is used can be effectively reduced, the response speed of the liquid crystal display device is increased, and the liquid crystal display device has the characteristics of moderate optical anisotropy numerical value, high charge retention rate, etc.

The purpose of the present invention is to improve the signal charge transfer capability. A light detection device includes: a semiconductor layer having a first face portion and a second face portion on opposite sides to each other; a photoelectric conversion unit that is provided in the semiconductor layer and performs photoelectric conversion on light incident from the second surface side of the semiconductor layer; a charge holding portion provided in the semiconductor layer and holding a signal charge obtained by photoelectric conversion in the photoelectric conversion portion; and a transfer transistor including a gate electrode and transferring a signal charge obtained by photoelectric conversion in the photoelectric conversion portion to the charge holding portion. The gate electrode includes a first electrode portion extending from a first face portion side to a second face portion side of the semiconductor layer, and a second electrode portion provided in the first electrode portion separately from the first face portion of the semiconductor layer and having an outer shape expanded more in plan view than the first electrode portion.

The invention discloses a storage-like enhanced GaN-based HEMT (High Electron Mobility Transistor) based on an in-situ oxidation gradient barrier and a preparation method thereof, which combines an optimized AlGaN barrier layer design of a gradient Al component and an in-situ oxidation technology, realizes a novel charge storage structure and well retains heterojunction characteristics at the same time. Specifically, a charge storage medium lamination layer is formed through self-saturation in-situ oxidation, an Al-rich component barrier is oxidized to form an AlON charge tunneling layer, a Ga-rich component barrier is oxidized to form a GaON charge storage layer, and part of the high Al component barrier is reserved to maintain higher two-dimensional electron gas concentration, so that the process complexity is reduced, and the efficiency is improved. The problems of migration rate reduction and two-dimensional electron gas concentration reduction caused by etching damage are avoided, a high-quality medium interface is formed through in-situ oxidation, and the threshold stability of the device is improved; the Al2O3 charge blocking layer prevents stored electrons from leaking to the grid electrode, and better charge retention characteristics can be obtained.

The present invention belongs to the field of electronic circuit structure and display technology. The present invention discloses an active matrix control system for a glass-based fine-pitch display screen based on AM drive. The glass-based pixel array module is used to construct a miniature pixel unit array on a glass substrate, adopts photolithography and thin film deposition technology to perform ultra-small pixel pitch layout, and integrates independent sub-pixel partitions within each pixel unit; the active matrix drive module introduces independent thin-film transistors and storage capacitors on the miniature pixel unit array to form an addressable drive network; uses independent thin-film transistors as active matrix switch units and storage capacitors as charge retention units, independently controls the voltage and current of each pixel unit and independent sub-pixel partition, and constructs row and column scanning paths; and significantly improves the clarity, color accuracy, refresh rate and power consumption control of the display effect.

The solid-state imaging device includes: a photoelectric conversion region disposed inside the epitaxial layer; a charge holding region disposed on the light incident side with respect to the photoelectric conversion region; a dug-out region dug out from the surface of the epitaxial layer toward the photoelectric conversion region; and a light-shielding film covering the charge holding region and extending on the sidewall of the dug-out region.

The invention provides an indoor logistics transportation robot based on electrostatic repulsion and a control method, and the structure of the robot comprises a stator unit array which is laid on the indoor ground and is formed by arranging a plurality of annular electrode units with the same structure in a matrix; the rotor aircraft is used for bearing articles, and a main body of the rotor aircraft is an electret film which is subjected to polarization treatment and has charge retention capability; and the control system is electrically connected with the stator unit array and is used for providing modulated high-voltage electric signals for the annular electrode units. Pure electric field driving is adopted, no mechanical contact exists between the stator and the rotor, and the zero-noise and zero-abrasion transportation process is achieved; a traditional voltage regulator voltage regulation mode is abandoned, a square wave duty ratio modulation technology is adopted, the response speed is high, and the control precision is high; and in combination with four-quadrant partition control, flexible planar omnidirectional movement and path planning are realized.

The application relates to the technical field of data storage, and discloses a data storage integrity verification method and system for a solid-state memory. The method comprises the following steps: collecting read-write instructions, programming and erasing cycle times, and charge retention times; performing voltage drift analysis based on the read-write instructions to obtain drift grouping data, and counting flip frequency distribution; performing storage block degradation analysis by combining the flip frequency distribution, the programming and erasing cycle times, and the charge retention times, to obtain a high-risk area; extracting a risk voltage drift amount, counting read-write interference amounts, and combining the risk voltage drift amount and the read-write interference amounts into an error feature vector; identifying a hard error type through a support vector machine model; performing reliability determination based on the hard error type and the flip frequency distribution, generating a check trigger signal, and positioning an accurate bit flip address; combining a data importance degree library to evaluate a repair priority sequence; performing data repair, periodically checking a repaired successful area, and obtaining an integrity verification report. The method improves the reliability of a storage system.

The invention provides a preparation method of a non-volatile memory ONO structure with low chlorine element content. The method comprises the following steps: growing an oxide layer on the surface of a substrate by using an in-situ water vapor generation process; nitriding the oxide layer by using a plasma nitriding process to form a composite structure of a tunneling oxide layer and a step layer; the composite structure is subjected to annealing treatment after nitriding; and sequentially forming a charge trapping layer and a barrier insulating layer on the composite structure by using a deposition process. According to the invention, a novel combined process is used for replacing a traditional low-pressure furnace tube process to grow the underlying medium, so that the chlorine content in an ONO structure, especially in a tunneling layer and a step layer, is remarkably reduced, and the defect level is reduced, thereby effectively improving the charge retention capability, durability and reliability of the nonvolatile memory.

A photodetection device that prevents decrease in a saturation charge amount and reduces or suppresses a parasitic light sensitivity is provided.　The photodetection device includes a plurality of photoelectric conversion sections that is arranged to be adjacent along a light incident surface for each pixel and accumulates a charge photoelectrically converted according to a light amount of incident light from the light incident surface, a light shielding section that is arranged substantially parallel to the light incident surface in the plurality of photoelectric conversion sections, and a charge holding section that is arranged on an opposite side to the light incident surface of the plurality of photoelectric conversion sections and is arranged at a place where at least a part overlaps the light shielding section in plan view to hold the charge.

An imaging apparatus includes a semiconductor substrate, a photoelectric conversion unit in the semiconductor substrate and generates charge corresponding to the amount of received light by photoelectric conversion, a charge holding unit on a side closer to a first surface of the semiconductor substrate than to the photoelectric conversion unit, and holds the charge transferred from the photoelectric conversion unit, a charge transfer unit which transfers the charge from the photoelectric conversion unit to the charge holding unit, a vertical electrode in a depth direction of the semiconductor substrate, the vertical electrode transmitting the charge generated by the photoelectric conversion unit to the charge transfer unit, and a first light control member at a position overlapping the vertical electrode when the semiconductor substrate is seen in a plan view from a normal direction of the first surface, and in a pixel region without straddling a boundary between pixels.

Dynamic range expansion in a solid-state imaging element using a global shutter is disclosed. In one example, a solid-state imaging element includes a first transfer transistor, a second transfer transistor, and an overflow gate. The first transfer transistor transfers a charge from a photoelectric conversion element to a charge holding section. The second transfer transistor transfers a charge from one of the charge holding section and the photoelectric conversion element to a first floating diffusion layer. The overflow gate causes a second floating diffusion layer to hold a charge having overflowed from the photoelectric conversion element.

The invention relates to the technical field of batteries, and discloses a nickel-zinc battery gel electrolyte capable of improving high-temperature performance and a battery preparation method, which comprises the following steps: mixing a monomer mixed solution containing potassium acrylate, polyethylene glycol methyl ether methacrylate, a cross-linking agent and an initiator with a mixed alkali solution system to prepare a pre-polymerized solution; assembling the positive plate, the negative plate and the diaphragm, and injecting the prepolymerization liquid; and heating to initiate in-situ polymerization to form the gel electrolyte. The functional monomer PMEM is introduced to construct a three-dimensional polymer network with a flexible polyether side chain together with KAA, the network structure effectively binds water molecules, and side reactions such as positive electrode material structure collapse, oxygen evolution and zinc negative electrode corrosion caused by too high activity of the water molecules at high temperature are inhibited; meanwhile, PMEM ether oxygen atoms slow down diffusion and dissolution of the zinc negative electrode in the storage process; according to the prepared nickel-zinc battery, the high-temperature cycle life, the high-temperature floating charge life and the high-temperature charge retention rate are improved, and the problem that an existing nickel-zinc battery is poor in high-temperature performance is solved.