6results about How to "Reduce etch time" patented technology

The invention discloses a method for preparing MXene through fluoride-free alkali etching of an ultrasonic-assisted supercritical fluid technology, and relates to the field of MXene preparation.Fluorine-free green preparation of MXene is achieved through cooperation of supercritical carbon dioxide fluid and a high-frequency power ultrasonic technology and a fluoride-free etching agent. The preparation method comprises the following steps: introducing carbon dioxide to reach a supercritical state, carrying out an etching reaction in the supercritical state by adopting a stirring or fluid circulation mode, applying continuous or discontinuous high-frequency power ultrasonic treatment to the whole reaction system, recovering to normal pressure and normal temperature after the reaction is finished, collecting a product, washing and drying, thereby obtaining the high-purity silicon dioxide. The high-frequency vibration of the ultrasonic waves and the high diffusivity of the supercritical carbon dioxide are utilized to promote the etching agent to remove A-layer elements in the MAX phase, so that the use of a fluorine-containing etching agent is avoided, the environmental pollution is reduced, and the etching efficiency of the MAX phase is also remarkably improved.

The invention relates to the field of printed circuit board (PCB) manufacturing, provides a method for improving the dry film pressing effect and etching quality of a non-adhesive layered area of a PCB, and is suitable for PCB production links such as pattern electroplating, dry film pressing and etching. The method comprises the following steps: designing a film used for pattern electroplating, and changing a linear design of the edge of a non-adhesive area into an inverted raised grain or zigzag design so as to disperse and release stress generated during dry film pressing and improve the coverage and the fitting tightness of the dry film in a step area; after the outer-layer base material is pressed and before the dry film is pressed, the thickness of the bottom copper is uniformly reduced, the total amount of copper needing to be etched subsequently is reduced, and the lateral erosion risk caused by the fact that the dry film is not pressed compactly is reduced; the total thickness of the bottom copper and the surface copper of the base material is reduced to 15-20 microns, the total copper height after pattern electroplating is reduced, the absolute offset height between the first electricity and the second electricity is reduced, and the dry film is easy to compact and press-fit without bubbles.

The invention provides a mother battery piece, a battery piece, a preparation method of the mother battery piece and a photovoltaic module. The battery piece comprises a first semiconductor substrate, the first semiconductor substrate comprises a first surface, a second surface and a side surface, the first surface and the second surface are oppositely arranged, the side surface is connected with the first surface and the second surface, and the first surface comprises a central region and a first isolation region arranged around the central region; the first doped semiconductor layer is arranged in the central region; the isolation groove is formed in the first isolation area and surrounds the central area; the tunneling passivation contact structure is at least arranged on the second surface; the first substrate doping layer is arranged on at least part of the side surface; the first passivation layer at least covers the first doped semiconductor layer, the isolation groove and the first substrate doped layer; the battery efficiency can be improved, and the manufacturing cost can be reduced.

The invention discloses a method for preparing MXene through fluoride-free etching of an ultrasonic-assisted supercritical carbon dioxide flash explosion technology, and relates to the field of MXene preparation, MXene is prepared through a one-pot method by utilizing the synergistic effect of a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium, and the MXene is prepared through a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium. Putting the fluoride-free etching agent and the MAX phase into a supercritical reaction kettle; introducing carbon dioxide to enable the carbon dioxide to reach a supercritical state, and applying continuous or discontinuous high-frequency power ultrasonic treatment to carry out supercritical state etching reaction; after the reaction is finished, carrying out instantaneous supercritical flash explosion treatment; releasing the pressure of the flash explosion area and the buffer area, collecting the product, centrifuging, washing and drying to obtain an MXene product; according to the method, the production of fluorine-containing waste liquid is avoided, the etching efficiency and the product yield are remarkably improved by virtue of high permeability and mass transfer characteristics of supercritical carbon dioxide, and a new way is provided for large-scale preparation of various MXene materials.

The application discloses a light emitting diode and a preparation method thereof. The preparation method comprises the following steps: providing a substrate, forming an epitaxial structure on the surface of the substrate, wherein the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer formed on the surface of the substrate in sequence. The second semiconductor layer and the active layer are etched in sequence from the surface of the second semiconductor layer downwards to expose the upper surface of the first semiconductor layer at the edge of the epitaxial structure; the upper surface of the first semiconductor layer exposed at the edge of the epitaxial structure is defined as a sub-mesa; and the edge area of the epitaxial structure is etched to the substrate to form a cutting path area on the surface of the substrate. The mesa structure is not formed at the edge position of the epitaxial structure, the influence of the mesa structure formed at the edge position of the epitaxial structure on the light emitting area is avoided, and the light emitting efficiency of the light emitting diode is improved.

This application provides an alkaline polishing additive, a polishing liquid, and a polishing method, comprising, by weight percentage: 0.01%~10.0% polishing agent, 0.05%~1.5% pH adjuster, 0.001%~2.5% stabilizer, 0.05%~2.5% first protective agent, 0.01%~1.0% second protective agent, 0.001%~1.0% defoamer, and the balance being water; wherein the first protective agent is a polyhydroxy compound and / or a polyamino compound, and the second protective agent is a compound containing boron hydroxyl group -B-OH; the pH value of the alkaline polishing additive does not exceed 3.5. By combining two specific protective agents, this application enables the alkaline polishing additive to simultaneously etch the polycrystalline silicon layer and protect the BSG / PSG layer in a high-temperature, strongly alkaline environment, efficiently processing the alkaline polishing process of BC batteries, shortening etching time, and improving production efficiency.