10results about How to "Etching speed is fast" patented technology

The invention belongs to the technical field of metal etching, and particularly discloses a metal etching solution which comprises the following components in percentage by mass: 50-60% of phosphoric acid, 0.5-1.5% of nitric acid, 6-10% of acetic acid, 3-6% of a sulfonic acid compound, 2.5-3.6% of inorganic salt, 0.5-1.5% of an organic chelating agent, 1-3% of a nonionic surfactant, 0.1-2% of an amido carbazole compound and the balance of deionized water. The metal etching liquid provided by the invention is small in CD bias, high in etching speed and good in angle stability when being used for etching aluminum, and is free of residues and high in etching speed when being used for etching copper, and does not damage a substrate.

The invention belongs to the technical field of semiconductors, and particularly relates to a method for reducing dark current of an aluminum gallium nitrogen ultraviolet photoelectric detector, which comprises the following steps: immersing a pre-cleaned sapphire substrate in a mixed solution for oxidation etching, the solution being a mixed solution of an oxidizing agent and an etching agent; the etched sapphire template is taken out, washed for a period of time and dried; transferring the dried sapphire into hydride vapor phase epitaxy equipment, keeping for a period of time at high temperature in a mixed atmosphere, and then epitaxially growing an aluminum-gallium-nitrogen epitaxial layer to form an aluminum-gallium-nitrogen / sapphire template; and preparing the ultraviolet photoelectric detector on the aluminum gallium nitride / sapphire template through ultraviolet lithography and electron beam evaporation processes. The method provided by the invention can effectively remove silicon pollutants at the growth interface of aluminum gallium nitrogen and sapphire and reduce interface leakage current caused by silicon impurities, so that the dark current of the aluminum gallium nitrogen ultraviolet photoelectric detector is remarkably reduced.

The invention relates to the technical field of printed circuit board fine circuit preparation, in particular to a method for preparing a PCB fine circuit through efficient pulse electrolytic chemical synergy etching, according to the method for preparing the PCB fine circuit through etching, high pulse peak current density is generated through one-way pulse current, use of reverse pulse current is avoided, and the circuit quality is improved. And meanwhile, the current control is simplified. Moreover, through the synergistic effect of the high pulse peak current density and the limited duty ratio, under the high pulse peak current density, the electrolytic etching speed can be increased, the electrolytic etching time can be greatly shortened, the corrosion effect of chemical etching on the circuit is relatively weakened, and the side corrosion of the circuit is small. Due to the fact that the electrolytic etching speed is high, the electrolytic etching time is short, electrolytic etching is used as a leading part, and chemical etching is used as a supplement part, a corrosion inhibitor does not need to be used in the electrolytic etching solution, and the method has the advantages of being simple in process, low in preparation cost, high in etching speed, good in etching uniformity, high in production efficiency and good in circuit quality and reliability.

The application discloses an etching method and a plasma etching device. The etching method comprises the following steps: providing a reaction cavity, and placing a substrate in the reaction cavity; etching the substrate at 0 DEG C or below; and raising the temperature of the substrate to 60 DEG C or above, so that by-products deposited on the substrate are discharged in a gaseous form. The etching step and the temperature raising step are alternately performed. After the etching is performed for a period of time, the temperature of the substrate is raised to 60 DEG C or above, so that the by-products originally adhered to the substrate are discharged from the substrate, thereby improving the etching efficiency. The etching step and the temperature raising step are alternately and cyclically performed, so that the etching speed of each etching step can be maintained faster, and the advantages of low-temperature etching can be fully exerted.

The present invention provides a titanium metal film etching liquid composition, a titanium metal wiring, and a semiconductor element, wherein the titanium metal film etching liquid composition contains an inorganic acid, a fluorine-containing compound, and a sulfate compound, and does not contain hydrogen peroxide and chloride, and the Y1 value and the Y2 value defined by specific mathematical formulas 1 and 2 are within specific ranges. The titanium metal film etching liquid composition of the present invention can minimize undercutting and residue generation.

This invention relates to a method, equipment, apparatus, system, and production line for processing blind vias in multilayer glass substrates. The method includes: controlling a first laser focusing spot to enter and focus inside the glass layer from a predetermined position on the upper surface of the glass layer, thereby modifying or micro-exploding the glass layer to form loose blind vias; chemically etching the multilayer glass substrate with the loose blind vias to form second blind vias; and controlling a second laser cleaning spot to laser-process the insulating layer at the bottom of the second blind vias to form third blind vias. This invention uses a first laser focusing spot to process loose blind vias on the glass layer, making the glass in this area porous, increasing the contact area with the chemical etching solution, and thus accelerating the etching speed. Simultaneously, the first laser focusing spot modifies or micro-explodes the glass layer, and the glass within the loose blind vias is annealed by heat, further improving the etching efficiency.

The present application discloses a semiconductor structure and a method for preparing the same, wherein the method for preparing the semiconductor structure comprises: providing a substrate, wherein the surface of the substrate is covered with a graphic structure to be etched; and using ion implantation technology to etch and remove the graphic structure to be etched to obtain a target graphic structure. When high-energy ions collide with the graphic structure to be etched, energy is transferred from the incident ions to the surface atoms of the graphic structure to be etched. If the binding energy between the atoms on the surface of the graphic structure to be etched is lower than the energy of the incident ions, the surface atoms of the graphic structure to be etched will be moved away or removed from the surface to achieve the purpose of etching. The method can achieve control of the etching speed by controlling the energy and dosage of the injected ions. Increasing the energy and dosage of the injected ions can speed up the etching speed and improve the production efficiency of the product.

The invention discloses an SOI (Silicon On Insulator) silicon film transfer method based on maskless ultrashort pulse laser etching, which comprises the following steps of: ablating and processing micron-sized hole arrays and slits at positions which are not effectively occupied by an SOI surface silicon film and a device by using ultrashort pulse laser, and immersing a sample into a hydrofluoric acid solution to corrode a buried layer; when SiO2 between two adjacent round holes in the horizontal direction and the vertical direction is observed to be completely corroded, residues are formed in the area between the round hole in the outermost layer and the etching channel, the residual SiO2 in the buried layer can be used as a support, and the Si thin film can be supported under the condition that the transfer printing success rate is not reduced. For transfer printing of the Si thin film on the insulator with a large area, holes and channels are introduced through an ultra-short (picosecond) pulse laser, and hole distribution is designed, so that the etching speed of the whole etching area is the same as much as possible, over-etching can be avoided as much as possible, the integrity of the Si thin film is protected, and the success rate of subsequent transfer printing is improved.

A processing liquid is provided, which is a processing liquid for processing semiconductor wafers in a semiconductor forming process, and contains: (A) hypochlorite ions, (B) a pH buffer, and (C) tetraalkylammonium ions represented by the following formula (1). (In the formula, R 1 , R 2 , R 3 and R 4 are independently an alkyl group having 1 to 20 carbon atoms. )

The application provides an etching device for printed circuit board type heat exchanger core plate production and relates to the technical field of circuit board production. The etching device for printed circuit board type heat exchanger core plate production comprises a box body, an etching pool, a transmission chain, a guide plate and a storage rack. The storage rack comprises rollers, first connecting rods, T-shaped plates, first T-shaped sliding grooves and connecting plates. The guide plate is arranged on the inner side wall of the box body. When the transmission chain slowly moves in the etching pool with the storage rack, the guide plate reciprocally moves the first connecting rods by the rollers, the first connecting rods slide the T-shaped plates in the first T-shaped sliding grooves, the T-shaped plates move the two groups of side plates to the two sides by the two connecting plates, and thus a group of metal plates inserted into the storage rack swim in the etching pool, the etching liquid in the etching pool flows, and the etching speed of the metal plates is accelerated, so that the large-scale and high-efficiency production requirements are met.