213results about How to "Etching speed is fast" patented technology

The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.

The invention relates to a silicon nitride film etching solution, comprising first silicone compound, whose silicone atom is dependently combined with over three hydrophilic functional groups, and second silicone compound, whose silicone atom is dependently combined with one or two hydrophilic functional groups.

The invention discloses novel PCB copper reduction etching liquid. The novel PCB copper reduction etching liquid comprises components including 1-100 mL/L of sulfuric acid, 1-100 mL/L of hydrogen peroxide, 1 g/L-100 g/L of hydrogen peroxide stabilizer, 1 g/L-100 g/L of a copper ion complexing agent, 0.1 g/L-10 g/L of a surface active agent, 1 g/L-100 g/L of accelerator, 0.1 g/L-10 g/L of copper surface corrosion inhibitor and 0.1 g/L-10 g/L of needle hole inhibitor. The invention further provides a method for preparing the PCB copper reduction etching liquid. The tolerance of copper ions of the prepared PCB copper reduction etching liquid is high, the etching speed is high, the copper surface is bright and not prone to oxidization, and the needle hole defect is not likely to be generatedafter abnormally-crystallized copper crystals are subjected to copper reduction etching.

The invention relates to a glass substrate for display device and a method for manufacturing same and provides a glass substrate which is high in strain point and capable of preventing a melting tank from melting loss, a glass substrate which is high in strain point and capable of suppressing devitrification, a glass substrate which is high in strain point and etching speed, and a method for manufacturing the glass substrate. The glass substrate contains Sio2 and Al2O3, 0-8% of B2O3, 0.01-0.8 % of R2O, and 0.05-1 of BaO/RO in mol%, and the strain point is over 670 DEG C. The glass substrate may contain Sio2, Al2O3 and MgO, 0.1-0.9 of MgO/(RO+ZnO), the strain point is over 700 DEG C, and the contraction rate is 5ppm-75ppm. The glass substrate may contain Sio2, Al2O3 and BaO, 0-7% of B2O3, 1-15% of BaO, and less than 6.0 of Sio2/Al2O3, and the strain point is over 700 DEG C. RO represents (MgO+CaO+SrO+BaO), and R2O represents (Li2O+Na2O+K2O).

It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO₂ or Si₃N₄ which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined. After a film forming process for a base material is carried out by a CVD apparatus, a separated and refined fluorine gas is then converted to a plasma to remove a by-product adhered into the reaction chamber.

The invention discloses a wire-width-variable laser galvanometer scanning quick etching method and device. The principle that after laser beam is defocused, the power density gradient becomes small, and a light spot becomes large is used, a high-speed galvanometer scanning error accurate correcting method is used, by setting different focusing and defocusing laser processing distances and corresponding power parameters and laser galvanometer scanning parameters, the size of the laser light spot is controlled, large light spot raster scanning filling after defocusing is carried out is on an image filling zone, and then an image contour is subjected to vector scanning drawing. For different working distances, galvanometer scanning error correcting is carried out first, a high-accuracy galvanometer scanning locating table is formed, and the fact that the same high-accuracy galvanometer scanning locating effect is obtained at different laser processing distances is guaranteed. Quick accurate etching on images with different wire widths can be achieved, etching accuracy and processing speed are considered at the same time, the method and device can be widely used a plane etching system and a three-dimensional laser etching system, and the processing efficiency of equipment is improved.

The invention relates to a graphene capacitive touch screen metal electrode fine patterning method. The method aims at a substrate transferred with graphene, and during metal film layer deposition, photo-sensitive resist is used for protecting a window touch area of a touch screen, and the touch screen is subjected to complete patterning finally after photo-sensitive resist removal. The method is beneficial to industrialized large-scale production and processing of patterned metal electrode film layers and low in equipment transformation cost, etching speed of metal electrode layers and graphene layers is increased, a yellow light fine-etching process is avoided, manufacture procedures can be simplified greatly, cost is saved, and product yield is increased.

The invention provided a TFT (thin film transistor) array substrate, comprising a substrate (1) and a TFT, wherein the TFT comprises a gate electrode (2), a semiconductor layer (5), a source electrode (8) and a drain electrode (9), an adjacent layer of the semiconductor (5) is in a structure of a composite layer, the structure of the composite layer comprises a protective layer and an insulating layer, the protective layer can prevent the semiconductor layer (5) from losing oxygen, is made from an insulating material and is in contact with the semiconductor layer (5), and the insulating layer is made from an easily etching insulating material. The TFT array substrate can improve the stability of the TFT and is also suitable for large-batch production.

A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF₆ gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5-12 volume of fluorocarbon gas with respect to 100 volume SF₆ gas. The mixture gas in the protective film formation step is a mixture of 2-5 volume of SF₆ gas with respect to 100 volume fluorocarbon gas.

The invention provides a stainless steel electrolytic etching process, which mainly comprises the following steps of: (a) pre-treatment: cleaning the surface of a stainless steel workpiece by washing, deoiling, etc.; (b) application: applying a photosensitive adhesive on the surface of the workpiece and carrying out exposure, developing, hardening, etc.; (c) electrolytic etching: disposing the workpiece in an electrolysis tank containing a stainless steel electrolytic etching solution and electrifying for electrolysis, wherein the stainless steel electrolytic etching solution mainly contains copper chloride 200 to 400 g/L, hydrochloric acid 20 to 80 g/L, thiourea 1 to 5 g/L and potassium sodium tartrate 10 to 20 g/L; and (d) demolding: removing the residual adhesive film on the surface after electrolysis and cleaning to obtain the product. Accordingly, the stainless steel electrolytic etching process provided by the invention can achieve very high etching speed and higher accuracy under the low pressure condition, and has the advantages of simple process, low power consumption, high etching speed and wide application prospect.

The invention relates to an ethicng liquid composition, and a method for preparing an array substrate for use in a liquid crystal display device. The method comprises steps of forming grid wiring on a substrate, forming a grid insulation layer on the substrate containing the grid wiring, forming a semiconductor layer on the grid insulation layer, forming a source electrode and a drain electrode on the semiconductor layer, forming a pixel electrode connected with the drain electrode, and forming an electrode by etching films containing molybdenum metallic films or copper metallic films. A molybdenum alloy film is an alloy of niobium, tungsten or both with molybdenum. The ethicng liquid composition comprises, by weight percentage of total composition weight, 5.0%-25.0% of hydrogen peroxide, 0.01%-1.0% of fluorine compounds, 0.1%-5% of azole compounds, 0.1%-5.0% of water miscible compounds containing nitrogen atoms and carboxyl groups in a molecule, 0.1%-5.0% of phosphate compounds, 0.001%-5.0% of polyol surface active agents, and the balance of water. In addition, the ethicng liquid composition does not contain organic/inorganic acid or salt and cycloaliphatic amines

The invention discloses a locally anti-dazzle processing process of glass. The process comprises the following steps: firstly covering the part which does not need anti-dazzle treatment on the surface of to-be-treated glass with an acid-resistant impact-resistant protective layer; then impacting silicon carbide sands which are over 2000 meshes by using compressed air to the surface of the glass which is not covered by the acid-resistant impact-resistant protective layer, wherein the sand spray time is 30-60 minutes; and after sand spray, putting the sprayed glass into a 10-25% strong acid mixed solution to etch for 25-30 minutes. The process is simple to operate and refine in step and fully satisfies the technique requirements of optical level flat panel display and subtle touch of a touch screen.

The invention provides a method for manufacturing an oxide layer capable of reducing the gradient of a side wall. In the prior art, silicon oxide is directly subjected to photoetching and wet etching without being washed with hydrofluoric acid buffer corrosive liquid so as to result in larger gradient of the side wall. The method comprises the following steps: firstly, growing the silicon oxide on a silicon substrate through thermal oxidation process; secondly, washing the silicon oxide by using the hydrofluoric acid buffer corrosive liquid, and drying the silicon oxide; thirdly, coating photoresist on the silicon oxide, and baking the photoresist; fourthly, forming a graph of the oxide layer on the photoresist by exposure process; fifthly, developing the graph; sixthly, etching the graph by using the hydrofluoric acid buffer corrosive liquid to form the oxide layer; and finally, removing the photoresist. The method effectively reduces the compactness of the surface of the oxide layer and the adherence force of the oxide layer with the photoresist by washing the silicon oxide with the hydrofluoric acid buffer corrosive liquid before the photoetching and the wet etching processes, thereby effectively reducing the gradient of the side wall, and effectively improving the performance of a device.

The invention discloses an additive for acidic etching solution and the acidic etching solution. The additive includes, by mass, 1-200 parts of a nonionic surfactant and 1-200 parts of a stabilizer, wherein the stabilizer is at least one of sulfur-containing urea, mercaptan and bromides. The acidic etching solution comprises an etching basic liquid and the additive. The acidic etching solution canbe used for producing printed circuit boards, which has thick copper layer (copper thickness being 70 [mu]m or higher) or large to-be-etched area (to-be-etched area being more than 50%, especially whole-plate etching), and is free of instable or low speed during the etching. In addition, the additive can be used for directly producing bulk copper plates in a circuit board etching process withoutextra addition of an electrolysis additive.

The invention relates to a display device of a flat panel display (FPD) and an etching liquid composition for the transparent conductive film used for the electrodes of a solar cell or a touch control panel, and provides an etching liquid composition for etching transparent conductive films such as copper and/or copper alloy film and indium tin oxide simultaneously, which includes hydrochloric acid, ferric chloride or copper chloride and water, wherein the concentration of hydrochloric acid is from 15.0 to 36.0 weight%, and the concentration of ferric chloride or copper chloride is from 0.05 to 2.00 weight%.

The invention discloses a preparation method of a super-hydrophobic film on the surface of a steel substrate. The method includes the steps that the steel substrate is ground and subjected to deoilingpretreatment, and oil and oxides on the surface of the steel substrate are removed until the surface is smooth; the completely-treated steel substrate is soaked in a iron fluoride solution, and a rough steel substrate surface is obtained through the combination of chemical etching and electrochemical etching; and the etched steel substrate is soaked in an ethanol solution of stearic acid and perfluorooctyl trimethoxysilane to be modified for a period of time, after the steel substrate is dried at constant temperature, a modified super-hydrophobic nanosilicon dioxide solution is sprayed to thesurface of the steel substrate, and after heat treatment is completed, the super-hydrophobic composite film is obtained. The process is simple, environmentally friendly, safe and reliable, and a hydrophobic coating is high in hydrophobicity, further has the beneficial effects of being high in adsorptivity, good in abrasion resistance, high in corrosion resistance and the like, and is suitable forlarge-scale industrial production.

An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.

The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).

The invention belongs to the technical field of semiconductors and particularly relates to a method for transferring a Si-based AlGaN/GaN high electron mobility transistor to a flexible substrate. Themethod of the invention comprises a step of achieving the stripping of a non-flexible Si substrate by using a mode of combining chemical mechanical polishing and dry or wet etching, and a step of transferring the high electron mobility transistor device with the removal of a substrate to the flexible substrate through an intermediate layer of an adhesive material such as Norland by using a devicebonding technique to achieve the preparation of the AlGaN/GaN high electron mobility transistor. The method has the advantages of fast etching speed, low process cost and wide application range, andthe invention includes but not limited to a hard substrate semiconductor device based on a Si substrate or a sapphire substrate.