10683results about How to "Improve extraction efficiency" patented technology

A light engine comprises a pair of LED active elements mounted on a common header having first and second terminals. The first terminal is connected to the cathode of the first LED active element and the anode of the second LED active element, while the second terminal is connected to the anode of the first LED active element and the cathode of the second LED active element, thereby connecting the LEDs in an anti-parallel arrangement. A light engine having a single insulating or semi-insulating substrate having formed thereon plural LED active elements with associated p- and n-type contacts forming cathode and anode contacts, respectively, for each LED active element is also provided. The LED active elements may be mounted in a flip-chip configuration on a header having a plurality of leads. The header may include a pair of leads adapted such that two LEDs may be flip-mounted thereon with the anode of the first LED and the cathode of the second LED contacting one lead, while the cathode of the first LED and the anode of the second LED contact the other lead. In addition, the header may be adapted to permit a substrate having multiple active elements to be mounted thereon.

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

A light emitting device, which can be efficiently manufactured and maintain a stable light emitting property for a long period, is provided. The light emitting device comprises a first resin forming body including a periphery that forms a recess to house a light emitting element and a bottom that forms a bottom portion of the recess, and a second resin forming body which covers the light emitting element. The first resin forming body is composed of a thermosetting epoxy resin composite whose essential component is an epoxy resin. The bottom covers surfaces of lead frames excluding mounting regions of the light emitting element and wires. A thickness of the bottom is formed thinner than a thickness from the surface of the lead frames to a leading end of the light emitting element.

A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

A catheter for injecting and extracting fluids to interact with material at a treatment site in the body.

In a conventional semiconductor light-emitting device having a semiconductor light-emitting element-mounted body and an optical lens which are located adjacent each other, interfacial peeling sometimes occurs at the contact interfaces between components when the device is subjected to outside temperature changes. This may lead to the deterioration of optical characteristics and the reduction in reliability of the device. In accordance with an aspect of the disclosed subject matter, a semiconductor light-emitting element-mounted body can be integrated with the optical lens via a soft resin spacer. Hence, the soft resin spacer can serve as a thermal stress relaxation layer located between the semiconductor light-emitting element-mounted body and the optical lens, which are integrated together. The thermal stress relaxation layer can possibly prevent peeling, caused by thermal stresses due to outside temperature changes, from occurring at the interfaces between the components.

A method of preparing a poly(arylene ether) includes oxidatively polymerizing a monohydric phenol in solution, concentrating the solution by removing a portion of the solvent to form a concentrated solution having a cloud point, Tcloud, and combining the concentrated solution with an anti-solvent to precipitate the poly (arylene ether), wherein the concentrated solution has a temperature of at least about (Tcloud-10° C.) immediately before it is combined with the anti-solvent. The method reduces the formation of undesirably fine particles in the product poly(arylene ether).

A substrate for a surface light emitting device in which a transparent electrode, an organic thin film layer, and a cathode electrode are sequentially stacked, the substrate including: a transparent support substrate; and a highly refractive layer that is disposed between the support substrate and the transparent electrode and comprises at least one layer having a refractive index that is equal to or greater than a refractive index of the support substrate, wherein the highly refractive layer comprises a light diffusion unit that diffuses light incident from the transparent electrode and a planarized surface that contacts the transparent electrode. Accordingly, a Haze value of the highly refractive layer is set to be 5% or less, and a diameter of bubbles existing in the highly refractive layer is set to be 1/10th or less of a thickness of the highly refractive layer.

The present invention relates to the field of luminous devices, in particular to a luminous device (1) comprising a light transmissive element (2). The light transmissive element further comprises a semiconductor diode structure (3) for generating light, a reflecting section (22) for reflecting light from the diode structure (3) into the light transmissive element (2) and an output section (21) for outputting light from the diode structure (3). The luminous device (1) further comprises a reflecting structure (4), at least partially enclosing side surfaces of the light transmissive element (2), for reflecting light from the diode structure (3) towards the output section (21).

A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

The invention discloses a display panel and a fabrication method. The display panel comprises a substrate, a display component and a thin film package layer, wherein the display component is arranged on the substrate, the thin film package layer is arranged on the display component and comprises at least one first package material layer and at least one second package material layer, the refractive indexes of the first package material layer and the second package material layer are different, a plurality of grooves are formed in the at least one first package material layer, and the grooves are filled with the second package material layer arranged above the first package material layer provided with the plurality of grooves. Through the technical scheme, the luminous efficiency of the display panel is improved, and the service lifetime of the display panel is prolonged.

The invention relates to a parallel data processing method based on a distributed structure. The storing comprises steps as follows: (1) a data master key value is extracted from master nodes according to types of master key values, directed slave nodes distributed by data are determined according to data attribute values and a section comparison result in the master nodes, and simultaneously, a global keyword B+ tree index is established; (2), the data are distributed to the slave nodes corresponding to the master key values according to the global keyword B+ tree index on the basis of a share-nothing principle; and (3), the slave nodes receive a data distributing request, and the data are stored in child nodes locally on the basis of the share-nothing principle. According to the method, an effective index mechanism is combined, and the storage and management efficiency of system data is improved; on one hand, the reasonable data distribution is guaranteed, the storage throughput of the slave nodes is reduced, the local query performance is improved, and the system flexibility is guaranteed by utilizing high expandability of the slave nodes; and on the other hands, local transcript safety is guaranteed through local duplication of multiple transcripts.