10715results about How to "Improve extraction efficiency" patented technology

A light engine comprises a pair of LED active elements mounted on a common header having first and second terminals. The first terminal is connected to the cathode of the first LED active element and the anode of the second LED active element, while the second terminal is connected to the anode of the first LED active element and the cathode of the second LED active element, thereby connecting the LEDs in an anti-parallel arrangement. A light engine having a single insulating or semi-insulating substrate having formed thereon plural LED active elements with associated p- and n-type contacts forming cathode and anode contacts, respectively, for each LED active element is also provided. The LED active elements may be mounted in a flip-chip configuration on a header having a plurality of leads. The header may include a pair of leads adapted such that two LEDs may be flip-mounted thereon with the anode of the first LED and the cathode of the second LED contacting one lead, while the cathode of the first LED and the anode of the second LED contact the other lead. In addition, the header may be adapted to permit a substrate having multiple active elements to be mounted thereon.

A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a specific embodiment. At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices emits substantially polarized emission. Of course, there can be other variations, modifications, and alternatives.

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

The present inventions is related to a superconducting or non-superconducting isochronous sector-focused cyclotron, comprising an electromagnet with an upper pole and a lower pole that constitute the magnetic circuit, the poles being made of at least three pair of sectors (3,4) called "hills" where the vertical gap between said sectors is small, these hill-sectors being separated by sector-formed spaces called "valleys" (5) where the vertical gap is large, said cyclotron being energized by at least one pair of main coils (6), characterised in that at least one pair of upper and lower hills is significantly longer than the remaining pair of hill sectors in order to have at least one pair of extended hill sectors (3) and at least one pair of non-extended hill sectors (4) in that a groove (7) or a "plateau" (7') which follows the shape of the extracted orbit is present in said pair of extended hill sectors (3) in order to produce a dip (200) in the magnetic field.

The present invention relates to a process for preparing a biomass, such as from a microbial fermentation, for an extraction process to separate desired chemicals, nutritional products, bioactive components, proteins, carbohydrates, and lipids, from the biomass. Particularly preferred substances to extract include docosahexaenoic acid, docosapentaenoic acid, and arachidonic acid. The present invention also includes extracting the prepared biomass. Biomasses to be treated in accordance with the methods of the invention include plant, animal, and microbial biomass, particularly a microorganism such as Crypthecodinium cohnii and a fungus such as Mortierella alpina.

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

The present invention generally relates to video and / or television projection systems, and more particularly, to LED based light source systems utilizing generally non-rotationally symmetric, preferably oblong or rectangular, non-imaging collection optics for providing improved projection systems relative to arc lamp and other LED based light source systems. The non-rotationally symmetric non-imaging collection optics are configured to operate with LEDs to provide preferred, generally, uniform light distributions whose étendues match those of downstream applications such as those encountered in projection systems. Also provided are various arrangements for coupling LED output to the entrance aperture of collection optics and for coupling the outputs from a plurality of collection optic outputs to form single beams of illumination of preferred patterns, intensities, and color.

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

The invention is a light emitting diode that exhibits high reflectivity to externally incident light and high extraction efficiency for internally generated light. The light emitting diode includes a first reflecting electrode that reflects both externally incident light and internally generated light. The first reflecting electrode can be a metal layer; or a transparent layer and a metal layer; or a transparent layer and a metal layer with a plurality of metal contacts extending from the reflecting metal layer through the transparent layer. A multi-layer semiconductor structure is in contact with the first reflecting layer and has an active region that emits the internally generated light in an emitting wavelength range. The multi-layer semiconductor structure has an absorption coefficient less than 50 cm−1. A second reflecting electrode underlies the multi-layer semiconductor structure and reflects both the externally incident light and the internally generated light. The second reflecting electrode can be a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer with a plurality of metal contacts extending from the reflecting metal layer through the first transparent layer to the second transparent layer. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for the internally generated light.

A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

A light emitting device, which can be efficiently manufactured and maintain a stable light emitting property for a long period, is provided. The light emitting device comprises a first resin forming body including a periphery that forms a recess to house a light emitting element and a bottom that forms a bottom portion of the recess, and a second resin forming body which covers the light emitting element. The first resin forming body is composed of a thermosetting epoxy resin composite whose essential component is an epoxy resin. The bottom covers surfaces of lead frames excluding mounting regions of the light emitting element and wires. A thickness of the bottom is formed thinner than a thickness from the surface of the lead frames to a leading end of the light emitting element.

A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

A catheter for injecting and extracting fluids to interact with material at a treatment site in the body.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

The invention discloses equipment and a method for extracting biologically active ingredients from subcritical fluid, aims to solve the problems of low extraction efficiency and the like existing in the aspects of biologically active ingredient separation technology in the prior art and provides a set of subcritical equipment which comprises an extracting agent supply system, an entrainer supply system, an extraction system, a separation system, a solvent recycling system, a desolvation system, a heat supply system, a computer control system and the like, has high automatic control degree and is used for extracting the biologically active ingredients. Simultaneously, the invention also provides a new technological method for extracting the biologically active ingredients by adopting a subcritical extraction process. The method has the advantage of relatively low cost on the conventional extraction of an organic solvent, and the equipment has the characteristics of no solvent residue, no pollution, high bioactivity and the like in a product obtained by supercritical CO2 extraction technology and has the advantages of low investment on production equipment, high production efficiency within unit time, low energy consumption, flexible operation, high degree of automation and the like.

In a conventional semiconductor light-emitting device having a semiconductor light-emitting element-mounted body and an optical lens which are located adjacent each other, interfacial peeling sometimes occurs at the contact interfaces between components when the device is subjected to outside temperature changes. This may lead to the deterioration of optical characteristics and the reduction in reliability of the device. In accordance with an aspect of the disclosed subject matter, a semiconductor light-emitting element-mounted body can be integrated with the optical lens via a soft resin spacer. Hence, the soft resin spacer can serve as a thermal stress relaxation layer located between the semiconductor light-emitting element-mounted body and the optical lens, which are integrated together. The thermal stress relaxation layer can possibly prevent peeling, caused by thermal stresses due to outside temperature changes, from occurring at the interfaces between the components.

A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.

A method of preparing a poly(arylene ether) includes oxidatively polymerizing a monohydric phenol in solution, concentrating the solution by removing a portion of the solvent to form a concentrated solution having a cloud point, Tcloud, and combining the concentrated solution with an anti-solvent to precipitate the poly (arylene ether), wherein the concentrated solution has a temperature of at least about (Tcloud-10° C.) immediately before it is combined with the anti-solvent. The method reduces the formation of undesirably fine particles in the product poly(arylene ether).

There are provided a method of manufacturing a nitride semiconductor light-emitting element in which a nitride semiconductor layer of a first conductivity type, an active layer, and a nitride semiconductor layer of a second conductivity type are stacked in this order, including the steps of forming unevenness at a surface of the nitride semiconductor layer of the first conductivity type, forming unevenness at a surface of the nitride semiconductor layer of the second conductivity type, and forming a first electrode on a side of the nitride semiconductor layer of the first conductivity type and a second electrode on a side of the nitride semiconductor layer of the second conductivity type such that the first and second electrodes are positioned to face each other with the active layer interposed therebetween, and the nitride semiconductor light-emitting element.

An integrated process for treating alkaline wash water effluent from nitroaromatic manufacture, principally containing nitro-hydroxy-aromatic compounds is described. The integrated process concentrates the alkaline wash water to recover chemicals and water prior to treating the concentrate through supercritical water oxidation. The supercritical water oxidation step consists of treating the concentrate in the presence of an oxygen source at conditions, which are supercritical for water to cause a substantial portion of the organic component of the concentrate to oxidize. The product effluent includes a gaseous component and a clean water component, and in the event that insoluble ash is formed, an ash component. The new integrated process results in reduced chemical and water consumption compared to existing processes. In addition, the treated wash water effluent can be recycled to process or directly discharged.

A substrate for a surface light emitting device in which a transparent electrode, an organic thin film layer, and a cathode electrode are sequentially stacked, the substrate including: a transparent support substrate; and a highly refractive layer that is disposed between the support substrate and the transparent electrode and comprises at least one layer having a refractive index that is equal to or greater than a refractive index of the support substrate, wherein the highly refractive layer comprises a light diffusion unit that diffuses light incident from the transparent electrode and a planarized surface that contacts the transparent electrode. Accordingly, a Haze value of the highly refractive layer is set to be 5% or less, and a diameter of bubbles existing in the highly refractive layer is set to be 1 / 10th or less of a thickness of the highly refractive layer.

A light-emitting diode includes a substrate (110), a reflective layer (120), a second diffraction grating (130), a first semiconductor layer (142), an active layer (144), a second semiconductor layer (146), a transparent electrode layer (148), and a first diffraction grating (150), arranged in that order. The first diffraction grating and the second diffraction grating is composed of an array of parallel and equidistant grooves, and a inclined angle between the grooves of the first diffraction grating and the grooves of the second diffraction grating is equal to or more than 0° and equal to or less than 90°. One of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor and the other thereof is a P-type semiconductor. The light-emitting diode has high light extraction efficiency and is easy to manufacture at a low cost.

The present invention relates to the field of luminous devices, in particular to a luminous device (1) comprising a light transmissive element (2). The light transmissive element further comprises a semiconductor diode structure (3) for generating light, a reflecting section (22) for reflecting light from the diode structure (3) into the light transmissive element (2) and an output section (21) for outputting light from the diode structure (3). The luminous device (1) further comprises a reflecting structure (4), at least partially enclosing side surfaces of the light transmissive element (2), for reflecting light from the diode structure (3) towards the output section (21).

A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

The invention discloses a display panel and a fabrication method. The display panel comprises a substrate, a display component and a thin film package layer, wherein the display component is arranged on the substrate, the thin film package layer is arranged on the display component and comprises at least one first package material layer and at least one second package material layer, the refractive indexes of the first package material layer and the second package material layer are different, a plurality of grooves are formed in the at least one first package material layer, and the grooves are filled with the second package material layer arranged above the first package material layer provided with the plurality of grooves. Through the technical scheme, the luminous efficiency of the display panel is improved, and the service lifetime of the display panel is prolonged.

The invention relates to a parallel data processing method based on a distributed structure. The storing comprises steps as follows: (1) a data master key value is extracted from master nodes according to types of master key values, directed slave nodes distributed by data are determined according to data attribute values and a section comparison result in the master nodes, and simultaneously, a global keyword B+ tree index is established; (2), the data are distributed to the slave nodes corresponding to the master key values according to the global keyword B+ tree index on the basis of a share-nothing principle; and (3), the slave nodes receive a data distributing request, and the data are stored in child nodes locally on the basis of the share-nothing principle. According to the method, an effective index mechanism is combined, and the storage and management efficiency of system data is improved; on one hand, the reasonable data distribution is guaranteed, the storage throughput of the slave nodes is reduced, the local query performance is improved, and the system flexibility is guaranteed by utilizing high expandability of the slave nodes; and on the other hands, local transcript safety is guaranteed through local duplication of multiple transcripts.