3999 results about "Contact layer" patented technology

A multi-layer reduced pressure delivery apparatus is provided for applying reduced pressure tissue treatment to a tissue site. The multi-layer apparatus includes a tissue contact layer, a release layer, and a manifold layer. The tissue contact layer includes a scaffold adapted to contact the tissue site, the release layer includes a hydrogel-forming material and a plurality of flow channels, and the manifold layer includes a distribution manifold. The release layer is positioned between the tissue contact layer and the manifold layer to allow easy release of the manifold layer from the tissue contact layer following the administration of reduced pressure tissue treatment.

An integrated device for poration of biological tissue, harvesting a biological fluid from the tissue, and analysis of the biological fluid. The device comprises a tissue-contacting layer having an electrically or optically heated probe to heat and conduct heat to the tissue to form at least one opening, such as a micropore to collect biological fluid from the opening, and a detecting layer responsive to the biological fluid to provide an indication of a characteristic of the biological fluid, such as the concentration of an analyte in interstitial fluid. In the embodiment in which, the probe comprises a photosensitizing assembly designed for the uniform application of a photosensitizing material, such as, for example, a dye or a pigment, to a tissue, e.g., the stratum comeum. In one embodiment, the photosensitizing assembly comprises photosensitizing material combined with a carrier, such as, for example, an adhesive or an ink, and the resulting combination is applied to a substrate, such as, for example, an inert polymeric substrate to form a photosensitizing assembly. In another embodiment, the photosensitizing assembly comprises photosensitizing material incorporated into a film-forming polymeric material.

A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

A multi layered wound dressing for use on wounds producing high levels of exudate, the dressing comprising a transmission layer having a high MVTR; an absorbent core capable of absorbing and retaining exudates; and a wound contacting layer which transmits exudate to the absorbent core, the absorbent core and wound contacting layer limiting the lateral spread of exudate in the dressing to the region of the wound.

Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.

Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a contact layer on the exposed contact region of the nitride-based channel layer, for example, using a low temperature deposition process, forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact. A high electron mobility transistor (HEMT) and methods of fabricating a HEMT are also provided. The HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride-based channel layer, a contact recess in the barrier layer that extends into the channel layer, an n-type nitride-based semiconductor material contact region on the nitride-based channel layer in the contact recess, an ohmic contact on the nitride-based contact region and a gate contact disposed on the barrier layer adjacent the ohmic contact. The n-type nitride-based semiconductor material contact region and the nitride-based channel layer include a surface area enlargement structure.

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) a having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.

A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an n^t substrate, and trenches are provided in the n layer. The trenches are provided with p-doped regions. The n^t substrate and the n layer carry a contact layer.

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

A coated article is provided so as to have a fairly high visible transmission (TY or T_vis) to sheet resistance (R_s) ratio (i.e., a ratio T_vis/R_s). The higher this ratio, the better the coated article's combined functionality of providing for both good solar performance (e.g., ability to reflect and/or absorb IR radiation) and high visible transmission. In certain example embodiments, coated articles herein may be heat treatable. Coated articles herein may be used in the context of insulating glass (IG) window units, architectural or residential monolithic window units, vehicle window units, and/or the like.

In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni/Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.

Provided, in one embodiment, is a vacuum wound dressing for covering a wound bed comprising: a wound contact layer comprising a fibrous blend or fibrous material that forms a cohesive gel when wetted by wound exudate; a source of vacuum situated to be separated from the wound bed by the wound contact layer; and a vacuum sealing layer covering the wound contact layer and adapted to retain relative vacuum in the wound contact layer, wherein (i) the dressing is essentially missing a non-gelling, foam layer in which the source of vacuum is situated or (ii) the vacuum sealing layer comprises as an outer layer a foam layer.

A system, method, and apparatus are disclosed for dressing a wound and for minimizing scarring. The apparatus promotes scar-minimizing healing of a wound where negative pressure wound therapy is applied, and comprises a wound contact layer containing silicone, polysiloxanes, or other related compounds.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

A wound dressing for managing wound fluids includes a porous contact layer for positioning adjacent a wound. An internal open window extends through the contact layer exposing a distal side of an absorbent member. The absorbent member is disposed in a superimposed relation to the window of the contact layer and is dimensioned to extend laterally beyond the window such that a portion of the absorbent member overlaps and is secured to the contact layer. A drape layer is disposed on a proximal side of the absorbent member, and is adhesively coated to fasten the drape layer to the absorbent member. A cover layer disposed over the drape layer defines an internal open window such that the open window is adjacent the absorbent member. A distal side of the cover layer is adhesively coated to secure the cover layer to the contact layer.

A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask.