67771 results about "Nitrogen" patented technology

An organic electroluminescence device (1) including: an anode (20) and a cathode (50), at least two organic emitting layers (30), (32) and (34) interposed between the anode and the cathode, and at least one intermediate connection layer (40) and (42) being provided between the organic emitting layers (30), (32) and (34), the intermediate connection layer (40) and (42) comprising an acceptor layer, a donor layer and an electron-transporting material layer being stacked in this order from the cathode (50), the electron-transporting material layer containing a non-complex compound with a nitrogen-containing heterocyclic structure.

Novel membranes comprising various polymers containing heterocyclic nitrogen groups are described. These membranes are usefully employed in electrochemical sensors, such as amperometric biosensors. More particularly, these membranes effectively regulate a flux of analyte to a measurement electrode in an electrochemical sensor, thereby improving the functioning of the electrochemical sensor over a significant range of analyte concentrations. Electrochemical sensors equipped with such membranes are also described.

A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A-B-N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

Disclosed is an electroluminescent device comprising a light-emitting layer containing a light emitting material that contains an organometallic complex comprising a metal selected from the group consisting of Pt, Pd and Ir, and a tridentate (N{circumflex over ( )}C{circumflex over ( )}N) ligand, wherein the tridentate (N{circumflex over ( )}C{circumflex over ( )}N) ligand represents a ligand that coordinates to the metal through a nitrogen donor bond, a carbon-metal bond, and a nitrogen donor bond, in that order, wherein at least one of the nitrogen donors is part of an aromatic ring or an imine group. The invention also includes a display or room lighting device employing the device of the invention and a process of emitting light from the device of the invention. The device of the invention provides good luminance efficiency.

A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film.

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R¹ to R⁴ each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.

The present invention promotes incorporation of nitrogen (e.g., nitridation) into high-k dielectric films using a low temperature process. Further, the present invention provides an in-situ method; that is formation of the high-k dielectric film and nitridation of the film are carried out in the same process chamber during deposition of the film, as opposed to the conventional post processing techniques. In another aspect, a method for depositing a multi-layer material for use as a gate dielectric layer in semiconductor devices is provided.

The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.