609 results about "Tantalum nitride" patented technology

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.

A method of forming an interconnect structure comprising: forming a sacrificial inter-metal dielectric (IMD) layer over a substrate, wherein the sacrificial IMD layer comprising a carbon-based film, such as amorphous carbon, advanced patterning films, porous carbon, or any combination thereof; forming a plurality of metal interconnect lines within the sacrificial IMD layer; removing the sacrificial IMD layer, with an oxygen based reactive process; and depositing a non-conformal dielectric layer to form air gaps between the plurality of metal interconnect lines. The metal interconnect lines may comprise copper, aluminum, tantalum, tungsten, titanium, tantalum nitride, titanium nitride, tungsten nitride, or any combination thereof. Carbon-based films and patterned photoresist layers may be simultaneously removed with the same reactive process. Highly reactive hydrogen radicals processes may be used to remove the carbon-based film and simultaneously pre-clean the metal interconnect lines prior to the deposition of a conformal metal barrier liner.

A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.

An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.

A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR₁)(NR₂R₃)₃ in which R₁, R₂ and R₃ represent H or C₁-C₆ alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.

A magnetoresistive random-access memory device with a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The memory device includes an antiferromagnetic structure and a magnetic tunnel junction structure disposed on the antiferromagnetic structure. The magnetic tunnel junction structure includes a reference layer and a free layer with a barrier layer sandwiched therebetween. Furthermore, a capping layer including a tantalum nitride film is disposed on the free layer of the magnetic tunnel junction structure.

this invention relates to power in direct-current circuits. The invention takes gallium arsenide as foundation (1). On the foundation has power divider, power synthesizer, 90deg phaser, solid beam structure. Power divider and power synthesizer composed by port one (7), port two(8), port three(8), dissymmetry coplane band line(10), nitride tantalum electric resistance. Solid beam structure includes signal input port(16), pier(5), solid beam(13), pedestal structure(6), sensing electrode(4), sensing electrode leader(12), capacitance detecting port(15), air bridge(14). There are nitriding silicon medium layer on the transmission line, pedestal structure and sensing electrode under solid beam, and sensing electrode leader under Air Bridge.

The present invention relates to ALD processes for deposition of a metal selected from Pd, Rh, Ru, Pt and Ir wherein a layer including the metal is formed on a surface composed of a material selected from W, Ta, Cu, Ni, Co, Fe, Mn, Cr, V Nb, tungsten nitride, tantalum nitride, titanium nitride, dielectrics and activated dielectrics at a temperature ranging from >60° C. to <260° C. The layer is formed by sequentially pulsing into a chamber containing the surface a precursor for the metal and a reducing gas selected from hydrogen, glyoxylic acid, oxalic acid, formaldehyde, 2-propanol, imidazole and plasma-activated hydrogen.

Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH₃, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (^tBuN)Ta(NEt₂)₃ (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.

A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.

Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.