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91 results about "Air bridge" patented technology
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Superconducting quantum chip and manufacturing method thereof
The invention provides a superconducting quantum chip and a manufacturing method thereof, and relates to the technical field of quantum information, a first superconducting layer and a second superconducting layer in a superconducting structure are communicated by adopting an air bridge, the potential difference and the slot line mode between the first superconducting layer and the second superconducting layer are further eliminated, and the performance of the superconducting quantum chip is improved. The bridge deck width of the bridge deck part provided by the invention is optimally designed, that is, the bridge deck width of the bridge deck part is designed to be gradually reduced in the direction from the joint of the bridge deck part and the first bridge pier part and the joint of the bridge deck part and the second bridge pier part to the middle area of the bridge deck part; according to the invention, the stray capacitance between the air bridge and the superconducting transmission line is reduced, the influence of the stray capacitance on the superconducting quantum chip is improved, the performance of the superconducting quantum chip is further improved, the strength and stability of the bridge surface part are improved, the probability of collapse of the air bridge is reduced, the manufacturing difficulty of the bridge surface part of the air bridge is reduced, and the manufacturing cost is reduced. And the manufacturing process of the air bridge is simplified.
Owner:SHENZHEN SPINQ TECHNOLOGY CO LTD
A broadband multi-stage gysel power divider based on IPD process
The application discloses a broadband multi-stage Gysel power divider based on an IPD process, comprising a microstrip structure layer, and first and second dielectric substrates and a ground metal layer; the microstrip structure layer adopts a multi-layer nested structure, each layer of the nested structure is formed by cascading multi-stage Gysel power division units, and is arranged on the upper surface and the interior of the first dielectric substrate, so that an integrated layout based on the IPD process is formed, and a planar spiral structure, an air bridge, a parallel plate capacitor, a thin film resistor and a layered ground unit structure are integrated; the planar spiral structure is equivalent to a specific characteristic impedance transmission line, the air bridge structure solves cross interference and suppresses a parasitic capacitor, the parallel plate capacitor structure calibrates equivalent reactance parameters, the thin film resistor effectively improves port isolation and heat dissipation, and the layered ground unit structure strengthens heat dissipation and ground reliability. The application can realize stable power distribution in a wide frequency band, and is suitable for the integration requirements of high-frequency, high-power and small-sized radio frequency front ends.
Owner:NANJING UNIV OF SCI & TECH
Semiconductor device and chip
The utility model discloses a semiconductor device and a chip, and relates to the technical field of semiconductors. The semiconductor device comprises an epitaxial layer, a grid electrode, a source electrode and a drain electrode, the epitaxial layer comprises a first conductive channel and a second conductive channel, and the first conductive channel is arranged close to the first side of the epitaxial layer; the plurality of grids, the plurality of sources and the plurality of drains are arranged, the plurality of sources are respectively connected with the first conductive channel and the second conductive channel, and the plurality of drains are connected with the first conductive channel. According to the semiconductor device provided by the invention, an air bridge can be avoided, and miniaturization of the semiconductor device can be realized.
Owner:CHENGDU SHIDAI SUXIN TECH CO LTD
Air bridge preparation method, air bridge structure, chip and air bridge preparation system
The application discloses an air bridge preparation method, an air bridge structure, a chip and an air bridge preparation system, and relates to the technical field of micro-nano processing. The method comprises the following steps: forming N mound structures on a substrate, the mound structures are in the shape of a column, the mound structures comprise first surfaces and second surfaces opposite to each other, the first surfaces of the N mound structures are connected with the substrate respectively, N is a positive integer; and preparing an air bridge on the substrate with the N mound structures, the second surfaces of the N mound structures are connected with the air bridge respectively. In the method, on the one hand, the mound structures can play a supporting role on the air bridge, thereby improving the stability of the air bridge; on the other hand, since the mound structures are formed before the air bridge, in the air bridge preparation process, the mound structures, as the formed structures, can support and maintain the air bridge material used for forming the air bridge, thereby guaranteeing the smooth formation of the air bridge.
Owner:TENCENT TECHNOLOGY (SHENZHEN) CO LTD
Superconducting quantum computer with air-bridge type superconducting coupler
An air-bridge type superconducting coupler is provided. A frequency-fixed superconducting coupler includes: a bridge over a substrate, the bridge comprised of superconducting material, the bridge having two ends that each comprise a respective contact pad, each contact pad having an electrical connection to a respectively corresponding superconducting qubit, and each contact pad directly or indirectly contacting the substrate, wherein there is a gap between the substrate and a corresponding portion of the bridge that is between the contact pads.
Owner:SAMSUNG ELECTRONICS CO LTD
Gallery bridge for front side cabin door of airplane
The utility model belongs to the technical field of airplane maintenance and repair auxiliary equipment, and particularly relates to a gallery bridge for an airplane front side cabin door, which comprises a connecting platform and a cabin door platform, and the connecting platform comprises a connecting fixed platform, a first connecting telescopic platform and a second connecting telescopic platform, the cabin door platform comprises a cabin door fixing platform, a first cabin door telescopic platform and a second cabin door telescopic platform, the side, away from the connecting fixing platform, of the first connecting telescopic platform is connected to the transportation fixing platform in a front-back sliding mode, and the side, away from the connecting fixing platform, of the second connecting telescopic platform is connected with the first cabin door telescopic platform. A first lifting column structure is arranged at the lower end of one side, close to the second connecting telescopic platform, of the connecting fixed platform; a second lifting column structure and a third lifting column structure are arranged at the lower ends of the left and right sides of the cabin door fixed platform respectively. Through the arrangement of the telescopic platforms and the lifting stand column structures, the universality and the flexibility are improved.
Owner:SHENYANG BAOTONG DOOR
Bulk acoustic wave resonator, preparation method and bulk acoustic wave filter
The present invention provides a bulk acoustic wave resonator, a preparation method, and a bulk acoustic wave filter. The preparation method of the bulk acoustic wave resonator includes: providing a substrate; forming a bottom electrode and a piezoelectric layer on the substrate; forming a sacrificial layer at the edge of the surface of the piezoelectric layer away from the bottom electrode, wherein the sacrificial layer includes at least one of an air bridge structure sacrificial layer and a cantilever structure sacrificial layer; forming an uneven surface on at least part of the surface of the sacrificial layer away from the piezoelectric layer through a surface treatment process to form a first rough surface; forming a top electrode on the surface of the sacrificial layer away from the piezoelectric layer; and releasing the sacrificial layer. The technical solution provided by the embodiment of the present invention effectively consumes the shear waves and clutter entering the air bridge structure or the cantilever structure by providing a rough scattering surface on the air bridge structure or the cantilever structure, thereby improving the Q value of the bulk acoustic wave resonator.
Owner:SUZHOU HUNTERSUN ELECTRONICS CO LTD
Preparation method of ultra-low junction capacitance TVS (Transient Voltage Suppressor) protection device
The invention relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an ultra-low junction capacitance TVS (Transient Voltage Suppressor) protection device. The method comprises the steps that a high-aspect-ratio fin groove array is constructed based on a GaAs substrate, a steep side wall is formed through reactive ion deep etching and a plasma repairing technology, the traditional etching aspect ratio limit is broken through, and volume order of magnitude expansion of a depletion region is achieved; a P < + >-gradient intrinsic layer-N < + > doping structure is formed on a three-dimensional side wall by adopting multi-angle rotating ion implantation, electric field distribution is optimized through a continuous concentration slope, and the problem of advanced breakdown caused by peak electric field concentration is solved; an air bridge electrode process is innovated, suspended interconnection of air dielectric isolation is formed by release of a sacrificial layer, and stray capacitance is thoroughly eliminated; and in combination with a multi-ring field limit terminal and pulse laser local annealing, edge electric field suppression and lattice integrity control are realized. According to the method, the device has ultralow junction capacitance, nanosecond response and high robustness, and a subversive electrostatic protection solution is provided for a high-speed communication system.
Owner:深圳辰达半导体有限公司
Long-distance span air bridge manufacturing method
The invention relates to a long-distance span air bridge processing method. The processing method comprises the following steps: depositing a first photoresist layer on a substrate material, performing exposure / development, etching the substrate material by adopting a wet method, forming a first table top on the substrate material, and removing the first photoresist layer; according to the same operation, continuously coating the second photoresist layer to the nth table surface; coating an (n + 1) th photoresist layer on the outer side of the nth table top, performing exposure / development, performing metal evaporation, and removing metal and the (n + 1) th photoresist layer on the outer side of the nth table top to complete air bridge metal deposition; and coating an (n + 2) th photoresist layer, performing exposure / development, completely etching the substrate material in the vertical direction below the air bridge, and then removing the (n + 2) th photoresist layer to complete the air bridge manufacturing process. The problem of light resistance deformation caused by long-distance transconductance can be solved, and a long-span air bridge structure is achieved.
Owner:FUJIAN FULIAN INTEGRATED CIRCUIT CO LTD
Light detector and light-beat spectrometer
ActiveCN116195073BInterferometric spectrometryColor/spectral properties measurementsAir bridgeContact layer
The light detector (10) of the present application is provided with a semiconductor substrate (11), a mesa portion (12) formed on a main surface (11a) of the semiconductor substrate (11) in a manner extending along a light waveguide direction (A), a first contact layer (13), a second contact layer (14), a first electrode (15), and an air-bridge wiring (16) electrically connected to the first contact layer (13) and the first electrode (15). When viewed from a direction perpendicular to the main surface (11a) of the semiconductor substrate (11), a length (L1) of the mesa portion (12) in the light waveguide direction (A) is longer than a length (L2) of the mesa portion in a direction perpendicular to the light waveguide direction (A). The air-bridge wiring (16) is drawn out from the first contact layer (13) to one side in the direction perpendicular to the light waveguide direction (A) and is erected between the first contact layer (13) and the first electrode (15).
Owner:HAMAMATSU PHOTONICS KK
Air bridge preparation method of superconducting quantum chip and superconducting quantum chip
The invention discloses an air bridge preparation method of a superconducting quantum chip and the superconducting quantum chip, and is applied to the technical field of quantum.The method comprises the steps that a first photoresist layer is arranged on the surface of a substrate of the superconducting quantum chip; performing exposure and development treatment and heating reflux treatment on the first photoresist layer to form a bridge support structure; wherein the photoresist on the surface layer of the bridging structure is denatured in the heating reflux treatment process; carrying out ultraviolet flooding exposure treatment on the substrate of the bridge support structure containing the denatured photoresist according to a preset exposure dose by utilizing an ultraviolet light source; and preparing the air bridge based on the bridge support structure subjected to the ultraviolet flooding exposure treatment. A bridged structure formed after heating reflux treatment is subjected to ultraviolet flood exposure treatment, and a cross-linked structure (such as breaking C-C and C-O cross-linked bonds in colloid) of the modified photoresist is destroyed by utilizing photochemical reaction, so that the solubility of the photoresist in a photoresist removing solution is improved, the subsequent photoresist removing solution is easier to permeate to dissolve the colloid, and the photoresist removing efficiency and the photoresist removing effect are improved.
Owner:SHENZHEN SPINQ TECHNOLOGY CO LTD
A gallium nitride Schottky diode and its preparation method
The present invention discloses a gallium nitride Schottky diode and a method for fabricating the same. The diode comprises a substrate, a gallium nitride channel layer, a gallium oxide barrier layer, and a capping layer. A two-dimensional electron gas layer is formed between the gallium nitride channel layer and the gallium oxide barrier layer. Electrode grooves are provided at both ends of the gallium nitride channel layer to intercept the two-dimensional electron gas layer. The sides of the electrode grooves that contact the two-dimensional electron gas layer are filled with metal electrodes to form a cathode and an anode, respectively, while the other sides are hollowed out to form an air bridge. Both the cathode and the anode are Schottky electrodes. The Schottky diode fabricated by the present invention has the advantages of low parasitic effects, a large nonlinear capacitance range, and a high cutoff frequency.
Owner:HUBEI JIUFENGSHAN LAB
A new air bridge device with calibration-free function
A novel air bridge device with a calibration-free function belongs to the technical field of aircraft power simulation tests. In order to solve the problem that the air bridge is damaged or its relative position with the balance changes during the test, the present invention must re-complete the full-process calibration to obtain the interference force on the balance. The first straight pipe, the second straight pipe, the L-shaped bend pipe and the third straight pipe are connected end to end in sequence, and elastic ventilation devices are provided at the interfaces between the first straight pipe and the second straight pipe, between the second straight pipe and the L-shaped bend pipe, and between the L-shaped bend pipe and the third straight pipe. The upper end of the first straight pipe is connected to the measuring end of the balance, the right end of the third straight pipe is connected to the fixed end of the balance, and the axis of the third straight pipe is perpendicular to the axis of the first straight pipe and the second straight pipe. The novel air bridge device with a calibration-free function of the present invention can quickly obtain the interference force on the balance without performing the overall calibration of the air bridge and the combined calibration with the balance.
Owner:AVIC SHENYANG AERODYNAMICS RES INST
Low noise amplifier including an air bridge
PendingUS20260058614A1Amplifier with semiconductor-devices/discharge-tubesRF amplifierLow noiseAir bridge
Disclosed is a low noise amplifier which includes a low amplification circuit. The low noise amplification circuit includes a first source pattern that extends in a first direction, a first gate finger that is spaced apart from the first source pattern in a second direction perpendicular to the first direction, a second gate finger that is spaced apart from the first gate finger in the second direction, a second source pattern that is spaced apart from the second gate finger in the second direction, and an air bridge that makes contact with the first and second source patterns in a third direction perpendicular to a plane defined by the first and second directions and that is spaced apart from the first and second gate fingers in the first direction.
Owner:ELECTRONICS & TELECOMM RES INST
Film bulk acoustic resonator and manufacturing method therefor
The present application relates to the technical field of semiconductor devices, and specifically discloses a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises a substrate, and a lower electrode, a piezoelectric layer, a thickening layer and an upper electrode which are stacked on the substrate. An overlapping portion of projections of the lower electrode, the piezoelectric layer and the upper electrode on the substrate is an active region. An air wing and an air bridge located on two opposite sides of the active region are formed between the thickening layer and the piezoelectric layer. At a position corresponding to the air bridge, the thickening layer and the upper electrode are recessed towards the side of the piezoelectric layer, so that the thickening layer is in contact with the piezoelectric layer to cause a piezoelectric effect, and the air bridge is divided into a first air sub-cavity and a second air sub-cavity. The present application can effectively reduce the strong parasitic peak introduced by the thickening structure, so that the resonator has better properties.
Owner:WUHAN MEMSONICS TECH CO LTD
Superconducting quantum chip and preparation method thereof
The invention discloses a superconducting quantum chip and a preparation method thereof. The preparation method of the superconducting quantum chip comprises the following steps: preparing a bottom layer circuit on a substrate; preparing a Josephson junction on the substrate on which the bottom circuit is prepared; spin-coating a first photoresist on the substrate on which the bottom circuit and the Josephson junction are prepared and baking; spin-coating a second photoresist and baking the second photoresist; aligning the first mask with the Josephson junction, and performing exposure and development to form a hollow pattern of the bridge pier in the first photoresist and the second photoresist; pier metal is evaporated on the hollowed-out pattern of the pier through electron beam evaporation; spin-coating sacrificial layer photoresist on the substrate on which the pier metal is evaporated, and baking the sacrificial layer photoresist; aligning a second mask with the Josephson junction, and performing exposure and development to remove a non-air bridge region in the sacrificial layer; etching the global etching oxide layer by using an ion beam, and etching the deposited metal material in a non-air bridge area by using inductively coupled plasma to form an air bridge patch; and removing the photoresist and stripping to obtain the superconducting quantum chip.
Owner:SHENZHEN SPINQ TECHNOLOGY CO LTD
Quantum chip layout wiring method and device
PendingCN120181027AComputer aided designSpecial data processing applicationsAir bridgeSoftware engineering
The invention discloses a quantum chip layout wiring method and device, and the method comprises the steps: creating a target region in response to a quantum chip layout creation instruction; in response to the connection line generation instruction, automatically generating connection lines between the target quantum elements in the target area; the connecting line generation instruction comprises port parameters of connecting lines between the target quantum elements; according to the air bridge generation instruction, an air bridge is automatically generated on the connecting line, and an initial quantum chip layout is obtained; the connecting line generation instruction and the air bridge generation instruction are combined instructions or two independent instructions. A user only needs to select a proper quantum element, the connecting lines can be automatically generated between the target quantum elements in the target area, and the air bridges are uniformly arranged on the connecting lines to obtain an initial quantum chip layout, so that the wiring accuracy is improved, the quantum chip layout design efficiency is improved, errors are avoided, a complex wiring environment is effectively coped with, and the user experience is improved. And the labor intensity and the time cost of designers are reduced.
Owner:SHENZHEN SPINQ TECHNOLOGY CO LTD
Bulk acoustic wave resonator, filter and duplexer capable of improving Q value and preparation method of bulk acoustic wave resonator, filter and duplexer
The invention provides a bulk acoustic wave resonator, a filter and a duplexer for improving a Q value and a preparation method thereof, and relates to the technical field of bulk acoustic wave resonators. Comprising a substrate, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially stacked in the longitudinal direction, a cavity is formed between the substrate and the bottom electrode, single-protrusion frame structures are arranged between the edges of the two sides of the piezoelectric layer in the transverse direction and the top electrode, and the portions, close to the edges, of the frame structures are arranged in an overhead mode and form an air bridge structure communicated with the outside with the piezoelectric layer. The bulk acoustic wave resonator for improving the Q value aims at solving the problem that an existing single-protrusion and double-protrusion frame structure is poor in Lamb wave leakage suppression effect or large in machining process difficulty, it is guaranteed that the process is simple, Lamb wave transverse energy leakage is effectively suppressed, and therefore the Q value is improved.
Owner:GUANGZHOU AIFO LIGHT COMM TECH CO LTD
Manufacturing method and application of air bridge and mask, and mask
PendingCN120693054ASemiconductor/solid-state device detailsSolid-state devicesAir bridgeMechanical engineering
The invention discloses a manufacturing method and application of an air bridge and a mask and the mask, and belongs to the field of quantum chip manufacturing. The method for manufacturing the mask comprises the steps that a substrate is provided, a first light resistance layer is formed on the surface of the substrate, the first light resistance layer is patterned and subjected to hot backflow, the first light resistance layer is provided with two windows far away from each other, a bridge support and a supporting layer, the bridge support and the supporting layer are separated by the two windows, and the supporting layer is provided with a first sub-layer and a second sub-layer on the two sides of the bridge support; and fabricating a second photoresist layer on the first sub-layer and the second sub-layer, the second photoresist layer having an undercut opening and communicating with the window. The mask allows the air bridge to be manufactured in a stripping mode in the manufacturing process, so that the manufacturing steps of the air bridge can be reduced, and the manufacturing success rate of the air bridge is also improved.
Owner:ORIGIN QUANTUM COMPUTING TECH (HEFEI) CO LTD
Preparation method of air bridge in quantum chip and superconducting quantum chip
The present invention discloses a preparation method and a chip of an air bridge in a quantum chip, which are applied to the technical field of quantum chips. The method includes setting a first superconducting layer on the surface of a substrate; etching the first superconducting layer to form the topography of a coplanar waveguide structure; the coplanar waveguide structure includes separated ends; setting a second superconducting layer on the surface of the sample after forming the coplanar waveguide structure; the second superconducting layer covers the coplanar waveguide structure and fills the gaps of the coplanar waveguide structure, and the corrosion resistance of the second superconducting layer is lower than that of the first superconducting layer; based on the second superconducting layer, setting an air bridge connected to the first superconducting layer; the corrosion resistance of the air bridge is higher than that of the second superconducting layer; removing the second superconducting layer by a selective etching solution. Using the second superconducting layer as a sacrificial layer to fabricate the air bridge, even if there is residue after releasing the sacrificial layer, it will not have a great impact on the circuit performance, thereby reducing the impact on the circuit performance.
Owner:YANGTZE DELTA IND INNOVATION CENT OF QUANTUM SCI & TECH
Network bridge mounting device for unmanned aerial vehicle special for node seismograph
The utility model discloses a network bridge mounting device for a special unmanned aerial vehicle for a node seismograph, which comprises a device body mounted on the special unmanned aerial vehicle for the node seismograph. The device body comprises a shell with a containing cavity, and an antenna assembly is vertically arranged on one side wall of the shell; an AP mainboard module is arranged in the accommodating cavity, and is in communication connection with the node seismograph located on the ground through the antenna assembly so as to receive data of the node seismograph; the air network bridge module is in communication connection with a ground network bridge receiving end through the antenna assembly so as to send data of the node seismograph to the ground network bridge receiving end; and the battery module is respectively connected with the air network bridge module and the AP mainboard module to supply power. The node seismograph provided by the utility model overcomes the defects of short transmission distance and small coverage area of the existing node seismograph which utilizes WiFi and other ad hoc networks for short-distance transmission, and realizes data recovery and real-time monitoring tasks of the node seismograph.
Owner:HEFEI GUOWEI ELECTRONICS
Air bridge preparation method and device and electronic equipment
The invention discloses an air bridge preparation method and device and electronic equipment, and belongs to the technical field of chip preparation. According to the air bridge preparation method, a target metal material is sputtered on the surface of a substrate with a target supporting layer, a target metal layer composed of the target metal material in a target phase state is formed, the target supporting layer is removed, and the air bridge composed of the target metal layer is obtained. According to the air bridge preparation method, the target metal material forming the air bridge is in the target phase state, and the microwave loss of the target metal material in the target phase state is smaller than the preset threshold value, so that the microwave loss of the prepared air bridge can be reduced.
Owner:ORIGIN QUANTUM COMPUTING TECH (HEFEI) CO LTD
Manufacturing method of packaging structure
The invention provides a manufacturing method of a packaging structure, and the method comprises the following steps: providing a to-be-packaged product which comprises a substrate layer and an air bridge disposed on the substrate layer; forming a first protective layer on the substrate layer, wherein the first protective layer surrounds the air bridge; patterning the first protection layer; removing a part of the first protection layer around the air bridge to form a notch, wherein one side, deviating from the substrate layer, of the notch is open; and forming a second protection layer on one side, deviating from the substrate layer, of the first protection layer, wherein the second protection layer covers the notch. According to the manufacturing method provided by the invention, the first protection layer is directly formed on the substrate layer, and the second protection layer covering the notch is formed on the first protection layer after the first protection layer is patterned to form the notch, so that the air bridge is effectively protected, and the manufacturing method is simple in process, low in manufacturing cost and high in yield. The original to-be-packaged product is not damaged, and the formed first protection layer and the second protection layer are stable in structure, so that the air bridge can be effectively protected.
Owner:CHIPMORE TECH CORP LTD +1
Air bridge preparation method and device and electronic equipment
The invention discloses an air bridge preparation method and device and electronic equipment, and belongs to the technical field of chip preparation. The air bridge preparation method comprises the following steps: obtaining an initial substrate; a hard supporting layer made of a hard material is formed on the upper surface of the initial substrate, the hardness of the hard material is larger than preset hardness, and the preset hardness is determined by the hardness of the photoresist; forming a target superconducting layer covering the hard supporting layer; and removing the hard supporting layer to obtain the target air bridge. In the air bridge preparation method, the hard support layer is prepared on the surface of the initial substrate by using the hardness material with the hardness greater than the preset hardness, and the target superconducting layer covering the hard support layer is used as the air bridge. The hardness of the hard material is greater than the preset hardness determined by the photoresist, so that when the hard material is used for preparing the hard support layer, the risk of collapse of the support layer in the preparation process can be effectively reduced, and the stability of the air bridge preparation process can be improved.
Owner:ORIGIN QUANTUM COMPUTING TECH (HEFEI) CO LTD
Chip preparation method and chip
The invention discloses a chip preparation method and a chip, and the method comprises the steps: sequentially forming a first conductor layer and a first insulating layer on a semiconductor layer; forming a pier structure on the first insulating layer; forming a sacrificial layer between the pier structures; sequentially forming a third insulating layer and a bridge structure on the pier structure; and removing the sacrificial layer to form an air bridge structure, wherein the sacrificial layer is a BARC layer or an amorphous carbon layer. According to the preparation method of the chip, the BARC layer or the amorphous carbon layer is adopted as the sacrificial layer, the BARC layer or the amorphous carbon layer does not affect the structure of the chip structure in the removal process, over-etching of the chip structure is prevented, and an interference source of noise is effectively removed.
Owner:NEXCHIP SEMICON CO LTD
Method for manufacturing semiconductor device
PCT designated stage expiredWO2025154209A1Semiconductor/solid-state device detailsSolid-state devicesAir bridgeDevice material
A method for manufacturing a semiconductor device according to the present disclosure comprises: a step for forming a lower resist layer (4) on a substrate (1) that has a plurality of electrode parts (2, 2a) on the surface thereof, and patterning the lower resist layer (4) so as to have a first opening part that corresponds to the shape of an air bridge (7) which connects the plurality of electrode parts (2, 2a); a step for forming a power supply layer (5) on the lower resist layer (4) that includes the first opening part; a step for forming an upper resist layer (6) on the power supply layer (5), and patterning the upper resist layer (6) so as to have a second opening part that corresponds to the shape of the air bridge (7); a step for forming the air bridge (7) by forming a plating film on the power supply layer (5) in the second opening part; and a step for removing at least the upper resist layer (6) by means of injection of dry ice particles.
Owner:MITSUBISHI ELECTRIC CORP
A double-layer ring-shaped four-port network radio frequency microwave switch
The present application relates to the field of radio frequency microwave, and particularly relates to a double-layer annular four-port network radio frequency microwave switch, comprising: a substrate, the substrate is a rectangular plate with double surfaces; a co-planar waveguide structure, the co-planar waveguide structure adopts a three-in-one design, comprising a signal line and ground lines on both sides of the signal line; the co-planar waveguide structure is symmetrically arranged at the center of each side of the substrate; the signal line branch is further provided with a Pad window, a Pad lead and an air bridge structure; an upper electrode, the upper electrode is fixed on the co-planar waveguide through an anchor point, and the upper electrode is a cantilever type straight plate structure containing an array of release holes; a Y-type power divider structure, the Y-type power divider structure is narrow-band cascaded with the co-planar waveguide structure, and is used for accurately distributing an input signal to multiple output channels; a power division port of the Y-type power divider structure is connected with the upper electrode through a double-contact structure; a cascaded through-hole, used for realizing cascaded operation of a double-layer double-pole double-throw switch, ensuring signal integrity and realizing efficient transmission.
Owner:ZHONGBEI UNIV
High-power fuel cell cathode plate structure
The invention discloses a high-power fuel cell cathode plate structure, which comprises a fuel cell cathode plate provided with a diversion trench for air and cooling liquid to flow; the hydrogen public port, the cooling liquid public port and the air public port are all arranged on the inner side of the short edge of the fuel cell cathode plate; the air overturning kidney-shaped hole is formed in the inner side of the air public opening; the air distribution area and the air main flow area are arranged on the front surface of the fuel cell cathode plate; the cooling liquid distribution area, the cooling liquid main flow area and the air gap bridge area are all arranged on the reverse side of the fuel cell cathode plate; the air distribution area, the air main flow area, the cooling liquid distribution area and the cooling liquid main flow area are all provided with a plurality of convex ridges and flow guide grooves. According to the structure, the flow guide grooves for air and cooling liquid to flow are formed in the cathode plate of the fuel cell, so that the problems of overlarge pressure drop, insufficient heat dissipation and non-uniform flow caused by unilaterally increasing the active area of a single fuel cell are solved, the fluid resistance is reduced, and the whole stack power of the fuel cell is improved.
Owner:SHAANXI XUHYDROGEN TIMES TECH CO LTD
Connecting structure of boarding bridge lifting mechanism
Owner:HAOBO AVIATION EQUIPMENT CO LTD
An X-type upper electrode type MEMS single-pole six-throw switch
The application belongs to the technical field of radio frequency MEMS, and particularly relates to an X-shaped upper electrode type MEMS single-knife six-pole switch, which comprises a substrate, a microwave transmission line, a switch assembly and an air bridge. The microwave transmission line is arranged on the substrate. The microwave transmission line comprises an input signal line, a power divider, an output signal line and a ground line. The input signal line is arranged in one piece. The output signal line is arranged in six pieces. The input signal line is connected with the power divider. The power divider is connected with the output signal line through the switch assembly. The switch upper electrode of the application adopts an X-shaped double-end fixed beam structure. The anchor point is connected with the straight plate structure through a right-angle curved beam. The length of the upper electrode is indirectly increased. The elastic coefficient of the beam is reduced. The driving voltage is further reduced. The lower electrode top end adopts a semicircular structure. A funnel-shaped gradient structure is adopted at the connection position of the signal line. The two structures can reduce the coupling capacitance between the upper electrode and the lower electrode and improve the isolation of the switch. In addition, the three circular contacts are connected in parallel. The contact resistance is small. The current density is more uniform. The purpose of improving the insertion loss and improving the switch power capacity is achieved.
Owner:ZHONGBEI UNIV