48 results about "Air bridge" patented technology

The application discloses a broadband multi-stage Gysel power divider based on an IPD process, comprising a microstrip structure layer, and first and second dielectric substrates and a ground metal layer; the microstrip structure layer adopts a multi-layer nested structure, each layer of the nested structure is formed by cascading multi-stage Gysel power division units, and is arranged on the upper surface and the interior of the first dielectric substrate, so that an integrated layout based on the IPD process is formed, and a planar spiral structure, an air bridge, a parallel plate capacitor, a thin film resistor and a layered ground unit structure are integrated; the planar spiral structure is equivalent to a specific characteristic impedance transmission line, the air bridge structure solves cross interference and suppresses a parasitic capacitor, the parallel plate capacitor structure calibrates equivalent reactance parameters, the thin film resistor effectively improves port isolation and heat dissipation, and the layered ground unit structure strengthens heat dissipation and ground reliability. The application can realize stable power distribution in a wide frequency band, and is suitable for the integration requirements of high-frequency, high-power and small-sized radio frequency front ends.

The application discloses an air bridge preparation method, an air bridge structure, a chip and an air bridge preparation system, and relates to the technical field of micro-nano processing. The method comprises the following steps: forming N mound structures on a substrate, the mound structures are in the shape of a column, the mound structures comprise first surfaces and second surfaces opposite to each other, the first surfaces of the N mound structures are connected with the substrate respectively, N is a positive integer; and preparing an air bridge on the substrate with the N mound structures, the second surfaces of the N mound structures are connected with the air bridge respectively. In the method, on the one hand, the mound structures can play a supporting role on the air bridge, thereby improving the stability of the air bridge; on the other hand, since the mound structures are formed before the air bridge, in the air bridge preparation process, the mound structures, as the formed structures, can support and maintain the air bridge material used for forming the air bridge, thereby guaranteeing the smooth formation of the air bridge.

The invention relates to a long-distance span air bridge processing method. The processing method comprises the following steps: depositing a first photoresist layer on a substrate material, performing exposure / development, etching the substrate material by adopting a wet method, forming a first table top on the substrate material, and removing the first photoresist layer; according to the same operation, continuously coating the second photoresist layer to the nth table surface; coating an (n + 1) th photoresist layer on the outer side of the nth table top, performing exposure / development, performing metal evaporation, and removing metal and the (n + 1) th photoresist layer on the outer side of the nth table top to complete air bridge metal deposition; and coating an (n + 2) th photoresist layer, performing exposure / development, completely etching the substrate material in the vertical direction below the air bridge, and then removing the (n + 2) th photoresist layer to complete the air bridge manufacturing process. The problem of light resistance deformation caused by long-distance transconductance can be solved, and a long-span air bridge structure is achieved.

The light detector (10) of the present application is provided with a semiconductor substrate (11), a mesa portion (12) formed on a main surface (11a) of the semiconductor substrate (11) in a manner extending along a light waveguide direction (A), a first contact layer (13), a second contact layer (14), a first electrode (15), and an air-bridge wiring (16) electrically connected to the first contact layer (13) and the first electrode (15). When viewed from a direction perpendicular to the main surface (11a) of the semiconductor substrate (11), a length (L1) of the mesa portion (12) in the light waveguide direction (A) is longer than a length (L2) of the mesa portion in a direction perpendicular to the light waveguide direction (A). The air-bridge wiring (16) is drawn out from the first contact layer (13) to one side in the direction perpendicular to the light waveguide direction (A) and is erected between the first contact layer (13) and the first electrode (15).

Disclosed is a low noise amplifier which includes a low amplification circuit. The low noise amplification circuit includes a first source pattern that extends in a first direction, a first gate finger that is spaced apart from the first source pattern in a second direction perpendicular to the first direction, a second gate finger that is spaced apart from the first gate finger in the second direction, a second source pattern that is spaced apart from the second gate finger in the second direction, and an air bridge that makes contact with the first and second source patterns in a third direction perpendicular to a plane defined by the first and second directions and that is spaced apart from the first and second gate fingers in the first direction.

The present application relates to the technical field of semiconductor devices, and specifically discloses a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises a substrate, and a lower electrode, a piezoelectric layer, a thickening layer and an upper electrode which are stacked on the substrate. An overlapping portion of projections of the lower electrode, the piezoelectric layer and the upper electrode on the substrate is an active region. An air wing and an air bridge located on two opposite sides of the active region are formed between the thickening layer and the piezoelectric layer. At a position corresponding to the air bridge, the thickening layer and the upper electrode are recessed towards the side of the piezoelectric layer, so that the thickening layer is in contact with the piezoelectric layer to cause a piezoelectric effect, and the air bridge is divided into a first air sub-cavity and a second air sub-cavity. The present application can effectively reduce the strong parasitic peak introduced by the thickening structure, so that the resonator has better properties.

The invention discloses a superconducting quantum chip and a preparation method thereof. The preparation method of the superconducting quantum chip comprises the following steps: preparing a bottom layer circuit on a substrate; preparing a Josephson junction on the substrate on which the bottom circuit is prepared; spin-coating a first photoresist on the substrate on which the bottom circuit and the Josephson junction are prepared and baking; spin-coating a second photoresist and baking the second photoresist; aligning the first mask with the Josephson junction, and performing exposure and development to form a hollow pattern of the bridge pier in the first photoresist and the second photoresist; pier metal is evaporated on the hollowed-out pattern of the pier through electron beam evaporation; spin-coating sacrificial layer photoresist on the substrate on which the pier metal is evaporated, and baking the sacrificial layer photoresist; aligning a second mask with the Josephson junction, and performing exposure and development to remove a non-air bridge region in the sacrificial layer; etching the global etching oxide layer by using an ion beam, and etching the deposited metal material in a non-air bridge area by using inductively coupled plasma to form an air bridge patch; and removing the photoresist and stripping to obtain the superconducting quantum chip.

The invention provides a bulk acoustic wave resonator, a filter and a duplexer for improving a Q value and a preparation method thereof, and relates to the technical field of bulk acoustic wave resonators. Comprising a substrate, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially stacked in the longitudinal direction, a cavity is formed between the substrate and the bottom electrode, single-protrusion frame structures are arranged between the edges of the two sides of the piezoelectric layer in the transverse direction and the top electrode, and the portions, close to the edges, of the frame structures are arranged in an overhead mode and form an air bridge structure communicated with the outside with the piezoelectric layer. The bulk acoustic wave resonator for improving the Q value aims at solving the problem that an existing single-protrusion and double-protrusion frame structure is poor in Lamb wave leakage suppression effect or large in machining process difficulty, it is guaranteed that the process is simple, Lamb wave transverse energy leakage is effectively suppressed, and therefore the Q value is improved.

The invention discloses an air bridge preparation method and device and electronic equipment, and belongs to the technical field of chip preparation. According to the air bridge preparation method, a target metal material is sputtered on the surface of a substrate with a target supporting layer, a target metal layer composed of the target metal material in a target phase state is formed, the target supporting layer is removed, and the air bridge composed of the target metal layer is obtained. According to the air bridge preparation method, the target metal material forming the air bridge is in the target phase state, and the microwave loss of the target metal material in the target phase state is smaller than the preset threshold value, so that the microwave loss of the prepared air bridge can be reduced.

The invention provides a manufacturing method of a packaging structure, and the method comprises the following steps: providing a to-be-packaged product which comprises a substrate layer and an air bridge disposed on the substrate layer; forming a first protective layer on the substrate layer, wherein the first protective layer surrounds the air bridge; patterning the first protection layer; removing a part of the first protection layer around the air bridge to form a notch, wherein one side, deviating from the substrate layer, of the notch is open; and forming a second protection layer on one side, deviating from the substrate layer, of the first protection layer, wherein the second protection layer covers the notch. According to the manufacturing method provided by the invention, the first protection layer is directly formed on the substrate layer, and the second protection layer covering the notch is formed on the first protection layer after the first protection layer is patterned to form the notch, so that the air bridge is effectively protected, and the manufacturing method is simple in process, low in manufacturing cost and high in yield. The original to-be-packaged product is not damaged, and the formed first protection layer and the second protection layer are stable in structure, so that the air bridge can be effectively protected.

The invention discloses an air bridge preparation method and device and electronic equipment, and belongs to the technical field of chip preparation. The air bridge preparation method comprises the following steps: obtaining an initial substrate; a hard supporting layer made of a hard material is formed on the upper surface of the initial substrate, the hardness of the hard material is larger than preset hardness, and the preset hardness is determined by the hardness of the photoresist; forming a target superconducting layer covering the hard supporting layer; and removing the hard supporting layer to obtain the target air bridge. In the air bridge preparation method, the hard support layer is prepared on the surface of the initial substrate by using the hardness material with the hardness greater than the preset hardness, and the target superconducting layer covering the hard support layer is used as the air bridge. The hardness of the hard material is greater than the preset hardness determined by the photoresist, so that when the hard material is used for preparing the hard support layer, the risk of collapse of the support layer in the preparation process can be effectively reduced, and the stability of the air bridge preparation process can be improved.

The invention discloses a chip preparation method and a chip, and the method comprises the steps: sequentially forming a first conductor layer and a first insulating layer on a semiconductor layer; forming a pier structure on the first insulating layer; forming a sacrificial layer between the pier structures; sequentially forming a third insulating layer and a bridge structure on the pier structure; and removing the sacrificial layer to form an air bridge structure, wherein the sacrificial layer is a BARC layer or an amorphous carbon layer. According to the preparation method of the chip, the BARC layer or the amorphous carbon layer is adopted as the sacrificial layer, the BARC layer or the amorphous carbon layer does not affect the structure of the chip structure in the removal process, over-etching of the chip structure is prevented, and an interference source of noise is effectively removed.

The present application relates to the field of radio frequency microwave, and particularly relates to a double-layer annular four-port network radio frequency microwave switch, comprising: a substrate, the substrate is a rectangular plate with double surfaces; a co-planar waveguide structure, the co-planar waveguide structure adopts a three-in-one design, comprising a signal line and ground lines on both sides of the signal line; the co-planar waveguide structure is symmetrically arranged at the center of each side of the substrate; the signal line branch is further provided with a Pad window, a Pad lead and an air bridge structure; an upper electrode, the upper electrode is fixed on the co-planar waveguide through an anchor point, and the upper electrode is a cantilever type straight plate structure containing an array of release holes; a Y-type power divider structure, the Y-type power divider structure is narrow-band cascaded with the co-planar waveguide structure, and is used for accurately distributing an input signal to multiple output channels; a power division port of the Y-type power divider structure is connected with the upper electrode through a double-contact structure; a cascaded through-hole, used for realizing cascaded operation of a double-layer double-pole double-throw switch, ensuring signal integrity and realizing efficient transmission.

The application belongs to the technical field of radio frequency MEMS, and particularly relates to an X-shaped upper electrode type MEMS single-knife six-pole switch, which comprises a substrate, a microwave transmission line, a switch assembly and an air bridge. The microwave transmission line is arranged on the substrate. The microwave transmission line comprises an input signal line, a power divider, an output signal line and a ground line. The input signal line is arranged in one piece. The output signal line is arranged in six pieces. The input signal line is connected with the power divider. The power divider is connected with the output signal line through the switch assembly. The switch upper electrode of the application adopts an X-shaped double-end fixed beam structure. The anchor point is connected with the straight plate structure through a right-angle curved beam. The length of the upper electrode is indirectly increased. The elastic coefficient of the beam is reduced. The driving voltage is further reduced. The lower electrode top end adopts a semicircular structure. A funnel-shaped gradient structure is adopted at the connection position of the signal line. The two structures can reduce the coupling capacitance between the upper electrode and the lower electrode and improve the isolation of the switch. In addition, the three circular contacts are connected in parallel. The contact resistance is small. The current density is more uniform. The purpose of improving the insertion loss and improving the switch power capacity is achieved.

The present application relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an ultra-low junction capacitance TVS protection device. The present application relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an ultra-low junction capacitance TVS protection device. + A gradient intrinsic layer-N + Doped structure, through a continuous concentration slope, an electric field distribution is optimized, and a problem of early breakdown caused by a peak electric field concentration is solved; an air bridge electrode process is innovated, a suspended interconnection isolated by air medium is formed by using a sacrifice layer release, and parasitic capacitance is completely eliminated; a multi-ring field limiting terminal and a pulse laser local annealing are combined, edge electric field suppression and lattice integrity control are realized. The method makes the device have ultra-low junction capacitance, nanosecond-level response and high robustness, and provides a revolutionary electrostatic protection solution for a high-speed communication system.

The air bridge simulation analysis method of a parameterized model, electronic equipment and a storage medium belong to the technical field of wind tunnel test design. In order to realize an air bridge simulation analysis method which is convenient to operate and simple to calculate. The air bridge simulation model parameters are set based on an L-shaped air bridge, including air bridge simulation model overall layout parameters, air bridge simulation model local size parameters, effectiveness detection is performed, and a parameterized air bridge simulation model is constructed; wind tunnel test load parameters are loaded, and parameterized air bridge simulation model verification analysis is performed; sensitive parameters are extracted from simulation model verification analysis results by using a parameter sensitivity analysis method, a sensitive parameter list is obtained, air bridge simulation analysis of the parameterized model is performed, and response surface optimization method is used to optimize simulation analysis results. The method for establishing a parameterized model is used to complete full-automatic establishment of the model by modifying parameters, realize automatic implementation of finite element simulation, and automatically extract calculation results.

The invention relates to a long-distance air bridge for preventing depression of a bridge floor and a preparation method thereof, and the method comprises the steps: enabling GaAs layers and InGaP layers to be alternately arranged for multiple times to form a first layer to an Nth layer, and enabling an Al < x > Ga < 1-x > As layer to be arranged below the Nth layer; depositing a first photoresist layer on the first layer, performing exposure / development, and etching the first layer to form a first mesa; etching the second layer and then removing the first photoresist layer; coating a second photoresist layer, performing exposure / development, etching the third layer to form a second mesa, and etching the fourth layer to remove the second photoresist layer; sequentially forming a third table-board to an a-th table-board according to the same operation; and coating an (a + 1) th photoresist layer on the outer side of the a-th table top, performing exposure / development, performing metal evaporation, removing metal and the (a + 1) th photoresist layer on the outer side of the a-th table top, and sequentially and completely etching the first layer and the Nth layer below the air bridge to complete the air bridge manufacturing process. According to the invention, a long-span air bridge structure is realized, and a window of an etching process is larger.

The invention belongs to the technical field of airplane wind tunnel test model design, and discloses a middle fuselage structure of a large-size low-speed wind tunnel turboprop airplane test model and a design method thereof, the middle fuselage structure adopts a composite design of combining an internal steel skeleton and an external aluminum alloy cover plate, and the internal steel skeleton is made of 30CrMnSiA alloy steel and serves as a main bearing structure; the outer aluminum alloy cover plate is made of 7075 aluminum alloy, and the aerodynamic shape of the middle fuselage is formed. A structure for installing wind tunnel test equipment such as a slip flow test air bridge is arranged on the internal steel framework, and the problems that the internal space of a traditional large-size middle fuselage is small, and the equipment is difficult to install are solved. Meanwhile, the method further comprises the optimal design of detachable upper and lower cover plates, a balance, a supporting rod connecting piece, a split type transition rectification bag and the like, and on the premise that the structural rigidity and strength and the test precision are guaranteed, the machining difficulty is greatly reduced, and the machining period and cost are greatly reduced. The method is suitable for manufacturing and testing the large-size low-speed wind tunnel turboprop aircraft test model.

This invention relates to the fields of radio frequency integrated circuits and advanced semiconductor packaging technology, and particularly to a multilayer spiral inductor structure and its fabrication method based on RDL technology. The fabrication method includes seed layer deposition, photolithography and electroplating to form gradient linewidth coils, alternating dielectric layer deposition, via etching to form vertical interconnect copper pillars, photoresist sacrificial layer process to form air bridges, and silicon nitride passivation packaging. This invention effectively improves the self-resonant frequency bandwidth and reduces conductor and dielectric losses through a fan-shaped topology layout, synergistic optimization of dielectric materials, and three-dimensional interconnect structure design, achieving miniaturized integration and high reliability of high-frequency inductor components.

The application provides a single-balanced mixer circuit based on a carbon nanotube Schottky diode, comprising the following structure: one end of the carbon nanotube Schottky diode is connected with a 180-degree hybrid junction structure, and one end is connected with a fan-shaped open circuit line structure; a radio frequency input impedance matching network is located between a radio frequency input port and the 180-degree hybrid junction; a local oscillator input impedance matching network is located between a local oscillator input port and the 180-degree hybrid junction; the fan-shaped open circuit line structure is located between the carbon nanotube Schottky diode device and a 1 / 4 wavelength high-impedance microstrip line; the 1 / 4 wavelength high-impedance microstrip line is located between the fan-shaped open circuit line structure and an air bridge; the air bridge is transversely arranged on the radio frequency input impedance matching network; a thin film resistor and a plate capacitor are connected on a intermediate frequency output line. The mixer circuit provided by the application can realize lower conversion loss in a high frequency band, and greatly reduces the parasitic capacitance of the Schottky diode device and the substrate loss of the passive device.

The application discloses a broadband waveguide-ground coplanar waveguide transition structure based on a double-dipole antenna, and belongs to the technical field of terahertz waves, which comprises an input end waveguide, a rectangular metal cavity, a terahertz integrated chip and an output end waveguide; the terahertz integrated chip comprises a substrate, an integrated structure, a back gold layer and two first dipole antenna transition sections; the integrated structure comprises two coplanar waveguide center conductive strips, a first coplanar waveguide ground layer, two second coplanar waveguide ground layers, a plurality of air bridges and four antenna structures; the antenna structure and the first dipole antenna transition section in the corresponding same end region form a pair of dipole antennas, and there are totally four pairs of dipole antennas. In the application, the transition section for connecting the coplanar waveguide ground layer in the traditional on-chip dipole antenna is placed in the back gold layer, so that the area occupied by the dipole antenna is greatly reduced, the electromagnetic energy coupling efficiency is improved, the bandwidth of the transition structure is expanded, the structure is simple, easy to process, and has a good application prospect.

The application provides a high-brightness LED module, comprising: a plurality of LED pixel units arranged in an array on a CMOS driving circuit substrate; wherein a first surface of an N-type epitaxial layer is formed with a light-emitting roughening structure; a metal air bridge structure is connected between the plurality of N-type epitaxial layers and extends on the sidewall and surface of a cathode column; a photoresist structure is arranged in an array with a plurality of fluorescent structure units in the photoresist structure; each fluorescent structure unit comprises: a mirror layer, a fluorescent structure and a lens structure; the mirror layer is formed on the sidewall of the fluorescent structure; the lens structure is formed at the top end of the corresponding fluorescent structure; wherein the fluorescent structure in the fluorescent structure unit is bonded to the light-emitting roughening structure in the LED pixel unit. The technical scheme solves the problem of improving the light gathering degree and the chip light-emitting brightness, and simultaneously improving the resolution of the LED module.

This invention discloses a superconducting quantum chip and its fabrication method, applicable to the field of quantum computing technology. The chip includes a substrate; the substrate has at least two through-holes extending from one surface to another, filled with superconducting material to form connection channels; a coplanar waveguide structure located on one surface of the substrate; the coplanar waveguide structure includes at least two mutually separated ends on the substrate surface, one end of the coplanar waveguide structure contacting the end of one connection channel, and the other end of the coplanar waveguide structure contacting the end of another connection channel; a superconducting layer located on the other surface of the substrate, the superconducting layer contacting the ends of at least two connection channels; and connection channels in contact with the same superconducting layer contacting the same coplanar waveguide structure. Linking the coplanar waveguide structure and the superconducting layer through connection channels within the substrate acts as an air bridge, avoiding interference between the coplanar waveguide structure and the superconducting layer, and possesses extremely high structural strength.

The invention discloses a parallel air bridge balance force measuring system and a design method thereof, and belongs to the technical field of aviation wind tunnel tests. The parallel air bridge balance force measuring system is installed in a ventilation machine body, the fixed end of an integrated parallel balance is connected with a belly supporting rod, the measuring end of the integrated parallel balance is connected with the ventilation machine body, and a middle air inlet channel is connected with the measuring end of the integrated parallel balance. The air bridge fixing end support is connected with the integrated parallel balance fixing end, meanwhile, the air inlet end of the air bridge pipeline is connected with the air bridge fixing end support, and the air outlet end of the air bridge pipeline is connected with the ventilation machine body. And a gap is reserved between the air bridge fixed end support and the ventilation machine body. A reinforcing rib is installed on the ventilation fuselage, the wind tunnel model balance structure design problem caused by insufficient model space and difficult arrangement of an air bridge balance system under special air inlet channel conditions such as an air inlet channel in the middle of an airplane is solved, and the applicability and the flexibility of the air bridge system are improved.

The application discloses a gallium nitride heterojunction PIN and SBD diode integrated device, and mainly solves the problem that the power capacity is limited when the existing discrete PIN and SBD diodes are used in a multi-stage limiting circuit. The first-stage gallium nitride heterojunction PIN diode and the second-stage and third-stage SBD diodes are arranged side by side above a silicon carbide substrate (1), an isolation groove is arranged between the diodes for isolating the devices, and the anode of one single diode and the cathode of a symmetrical single diode are connected through an air bridge structure. The gallium nitride heterojunction PIN diode and the SBD diode are interconnected through the air bridge structure and the common cathode mode, and the integration of the three-stage diodes is realized. The device has the advantages of fast frequency response, good voltage resistance, high integration, and the like, and when the device is used in a limiting circuit, the power capacity can be obviously improved, the response time can be reduced, and the integration can be improved, and the device can be applied to a high-power limiting circuit.

The invention provides a metal air bridge interconnection structure and a preparation method thereof. The metal air bridge interconnection structure comprises a supporting layer on a substrate, a coating layer and a metal bridge body. In particular, a support layer on a substrate has a surface in a continuous smooth curved profile. And the coating layer on the supporting layer is used for coating the supporting layer. And the metal bridge body on the coating layer extends along the surface of the supporting layer so as to form an arch shape and is used for electrically connecting the metal electrodes at different positions on the substrate.

The application discloses a PIN diode with an arc-shaped gradually-changing tube core, which comprises a substrate and a diode packaging structure, wherein the diode packaging structure is arranged on the substrate; the diode packaging structure comprises a first anode metal plate, an anode air bridge, a tube core, a cathode metal plate and an N-type high-doped layer; the first anode metal plate is connected with a second anode metal through the anode air bridge; the tube core comprises the second anode metal, a P-type high-doped layer and a semiconductor I layer; the second anode metal plate is in contact with the P-type high-doped layer to form an anode ohmic contact electrode; the cathode metal plate is in contact with the N-type high-doped layer to form a cathode ohmic contact electrode; the P-type high-doped layer is arranged directly below the second anode metal plate; and the semiconductor I layer is arranged between the P-type high-doped layer and the N-type high-doped layer. The application can eliminate the electric field concentration effect and improve the maximum withstand power of the diode by adjusting the gradually-changing shape.

The application discloses a gallium oxide-based transistor with a low gate interface state structure and a preparation method thereof, and aims at solving the problems of high gate interface state, poor gate control ability and large parasitic parameters of the existing gallium oxide device. The transistor comprises, from bottom to top, a Fe-doped semi-insulating beta-Ga2O3 substrate, a beta-Ga2O3 UID blocking layer, a beta-Ga2O3 channel layer with a fin array structure, a fin type space, an air bridge, a gate, a source and a drain. The free space gate adopts a hollow structure to replace the traditional solid gate dielectric, eliminates the interface state of the dielectric and the semiconductor, and improves the gate control and reliability of the device. The air bridge is in an arch shape and is suspended over the free space gate area, the bridge body is in contact with the gate at the top of each fin and forms a stable electrical connection. The application significantly optimizes the gate control and working performance of the device, and can be used for manufacturing a gallium oxide MOSFET device with high frequency and high power characteristics.

The utility model discloses a fly ash bin on-line heat fluidizing air bridge breaking device which comprises a fly ash bin body, one end and the other end of the fly ash bin body are fixedly connected with hot-air blowers, one end of each hot-air blower is fixedly connected with a first pipe body, and the two first pipe bodies are fixedly connected with the same second pipe body. After being heated by the air heater, airflow is conveyed to the bottom of the fly ash bin through the first pipe body, the second pipe body, the corrugated pipe and the air tap. The hot air flow not only can loosen fly ash through disturbance, but also can soften the hard bridge which is affected with damp and caked through heat, the bridge breaking effect is improved from the two aspects of physical and thermal effects, and the problem that normal-temperature air is poor in hard caking breaking capacity is solved. The universal structure of the sleeve body and the cavity can flexibly adjust the angle of the air tap, is matched with a bolt for fixation, can adapt to bridging conditions of different areas, avoids local fluidization blind areas, realizes comprehensive coverage, achieves combination of heating and fluidization, and meets the requirement of online efficient bridge breaking.

The application discloses an air bridge array, a manufacturing method thereof and a superconducting quantum device, and belongs to the field of superconducting circuits. The method rotates the target element around a first direction perpendicular to the surface of the mask pattern layer, deposits a first plating film material along a second direction, forms a reinforcing film layer on the side of each bridge deck support located in the deposition window, and forms a reinforcing support for the connection of the bridge deck formed by the plating film material on the bridge deck support based on the reinforcing film layer formed by the plating film material in the deposition window, so that the stability of the air bridge can be improved, and collapse caused by insufficient support strength of the bridge pier to the bridge deck can be prevented.