581 results about "Dipole" patented technology

The invention relates to a miniaturized millimeter wave filtering magnetoelectric dipole antenna with high out-of-band rejection, and relates to the technical field of communication antennae, and the miniaturized millimeter wave filtering magnetoelectric dipole antenna with the high out-of-band rejection effect comprises a strip line feed structure which is used for generating a lower stop band radiation zero point; the n-shaped feed structure is used for feeding the magnetoelectric dipole; according to the magnetoelectric dipole radiator, a U-shaped groove is etched in a dipole patch, so that the size of the antenna is reduced; the parasitic metal strips are used for enhancing the radiation suppression effect of the upper stop band; the folding split rings are folded to reduce the size of the split rings and enhance the radiation suppression effect of the lower stop band at the same time; the inverted L-shaped short circuit branch is used for enhancing the radiation suppression effect of the upper stop band, the absolute bandwidth of the antenna is 21.1 GHz to 31.0 GHz, the relative bandwidth is 37.0%, the lowest gain is 5.0 dBi, the highest gain can reach 7.8 dBi, the suppression level from the in-band highest gain to the radiation zero point of the upper stop band is larger than 40 dBi, and the suppression level from the in-band highest gain to the radiation zero point of the lower stop band is larger than 50.0 dBi.

The invention relates to the technical field of dam leakage detection, in particular to a high-precision three-dimensional dam leakage detection method and system, and the method comprises the steps: laying a first measurement line and a second measurement line at the top of a dam, laying a third measurement line at an upstream slope of the dam, and laying a fourth measurement line at a downstream slope of the dam; the first measuring line, the second measuring line, the third measuring line and the fourth measuring line are respectively arranged in parallel; the method comprises the following steps: obtaining dipole-dipole data, tripolar data and gradient data respectively tested by a first test line, a second test line, a third test line and a fourth test line; according to the structural data, the dipole-dipole data, the three-pole data and the gradient data of the dam, constructing a joint resistivity inversion model of the dam; and positioning a leakage risk area of the dam according to the structural data of the dam and the combined resistivity inversion model. According to the invention, an accurate leakage detection result of the dam body is formed, so that leakage fault pre-diagnosis of the dam is realized.

Dipole antenna structures are disclosed. In certain embodiments, a dipole antenna structure includes a first dipole, a second dipole, a third dipole, and a fourth dipole aligned in parallel. The dipole antenna structure further includes a signal delay line structure electrically connected to a common signal feed. The dipoles are electrically connected to the common signal feed through the signal delay line structure.

The invention discloses a strongly-coupled dual-polarized ultra-wideband phased-array antenna based on fishbone-shaped gap loading and a development method of the strongly-coupled dual-polarized ultra-wideband phased-array antenna. A series of fishbone-shaped gaps with different sizes and intervals are formed in the dipole, a traditional cross-shaped dipole is improved, and the working bandwidth of the antenna is expanded. Resistive loading of a traditional ultra-wideband array is not used, and the radiation efficiency is improved. The feed structure of the power divider and the double-balun is applied, so that better matching can be realized, and the profile height of the antenna is reduced. The whole antenna array adopts the light and thin dielectric substrate, a thick and heavy wide-angle impedance matching layer is omitted, and the weight is lighter. + / -45-degree scanning can be achieved within the frequency band of 0.25-1.85 GHz, and the overall height of the antenna is 0.054 times of the low-frequency wavelength.

The present invention relates to the technical field of photoelectric devices, in particular to a self-assembled monomolecular layer material based on a conjugated linker group, a preparation method therefor, and a solar cell. The chemical structural general formula of said self-assembled monomolecular layer material is shown as (1), wherein an electron donor is one of electron-rich groups and derivatives thereof, and L is a conjugated linker group. The introduction of the conjugated linker group into the self-assembled monomolecular layer material to replace a non-conjugated alkyl linker group can effectively achieve electron delocalization, thereby enhancing the intrinsic stability and hole extraction and transport capability of molecules in monomolecular self-assembled layers. In addition, the rigid structure thereof remarkably improves the degree of order and the density of molecular arrangement of monomolecular self-assembled layers. Moreover, the self-assembled monomolecular layer material can form dense monomolecular self-assembled layers on the surfaces of conductive substrates, thereby improving interface contact and passivating interface defects; and said material can form dipoles on the surfaces of the conductive substrates, thereby improving the surface work function and promoting hole transport.

Method to selectively diffuse dipole dopants into the high-k gate dielectric layer is provided. A method of the present disclosure includes an etching back process controlling DC and bias power, a periodical switching of the bias power is synchronized with a periodical switching of the DC power, leading to a balanced etching rate and uniform depth of recesses in dummy materials within the gate trenches for the subsequent selective diffusion process across different devices. Additionally, during the etching back process, a protective passivation layer can be formed as a barrier on the sidewall of the recess and / or at the bottom of the recess.

The invention relates to the technical field of single molecule devices, in particular to a probability bit device based on single tetraligand molecule dipole moment and a preparation method, a single tetraligand dipole molecule is assembled between a graphene point electrode pair, the single tetraligand dipole molecule has good randomness or uncertainty characteristics, and the probability bit device can be used for preparing a probabilistic bit device based on the single tetraligand molecule dipole moment. The states of the molecules can be read through conductance, and probability bits of a single molecule scale are realized; according to the invention, the linear mapping relation between the bistable time ratio and the bias voltage parameter is established by using the voltage dependence of molecular dipole inversion, the random generation mode of the traditional probability bit is broken through, the molecular configuration dynamic state is used as the core regulation dimension, and the characteristics of high-sensitivity field response and long-time coherence are integrated. And an efficient and extensible hardware carrier is provided for quantum-classical hybrid calculation. The preparation method provided by the invention is simple in process, mild in reaction condition and beneficial to large-scale production.

The invention discloses a resistor-loaded double-layer electric connection rotary symmetrical oscillator ultra-wideband antenna. The antenna comprises a dielectric substrate, a double-layer rotary symmetrical oscillator, a pair of metal through holes and a chip resistor. Wherein the double-layer rotationally symmetrical oscillator comprises a front radiation arm 1, a front radiation arm 2, a back radiation arm 3 and a back radiation arm 4, and each radiation arm is composed of a planar trapezoidal gradual change structure, a planar rectangular structure and a rotationally symmetrical tail end branch knot loading structure; the double-layer rotary symmetrical dipoles are connected through a pair of metal via holes, the planar resistor is loaded at a gap between the back radiation arms 3 and 4, and the feeding point is located at a gap between the front radiation arms 1 and 2. The antenna has the performance characteristics of ultra wide band and omnidirectional radiation, has the structural characteristics of ultra narrow size and ultra low profile, and is suitable for communication application scenes with limited space.

The invention discloses a broadband millimeter wave magnetoelectric dipole filtering antenna unit and a filtering array, the antenna is realized by adopting a multi-layer printed circuit board, and the antenna comprises a radiation layer printed circuit board and a feed layer printed circuit board. The radiation layer printed circuit board is provided with a magnetoelectric dipole radiator, and an electric dipole patch etched with an H-shaped gap reduces the size of the radiator while achieving low-frequency good filtering. A substrate integrated waveguide (SIW) cavity is arranged around the magnetoelectric dipole radiator, so that surface waves are suppressed, and the overall suppression effect of a stop band is enhanced. A strip line fed by a coaxial probe and a shielding SIW cavity structure are integrated on a feed layer printed circuit board, and the feed structure generates two radiation zero points at high frequency, so that good filtering response is realized. The antenna provided by the invention has the advantages of wide frequency band, small size, high out-of-band rejection level and frequency selectivity.

The utility model discloses a novel low-frequency radiation unit, which comprises a base and four groups of balun arms arranged in pairs, the four groups of balun arms are arranged on the base in an annular array, and each group of balun arms is connected with a dipole formed by two radiation arms to form a certain polarized radiator; the antenna further comprises a plurality of first coupling structures, a plurality of second coupling structures and a plurality of feed structures, the number of the first coupling structures, the number of the second coupling structures and the number of the feed structures are equal to the number of the dipoles, the two adjacent radiation arms belonging to the same dipole are connected through the first coupling structures, and the two adjacent radiation arms belonging to the same dipole are connected through the second coupling structures. The two adjacent radiation arms which do not belong to the same dipole are connected through a second coupling structure, and the two balun arms in each group are connected through a feed structure. The utility model has the advantages that the installation is convenient, the installation cost is reduced, and the broadband of directional diagrams and S parameters is realized.

The invention discloses a device and a method for realizing a near-field dual-polarization perfect Janus dipole, and relates to the technical field of near-field coupling and excitation of dipoles. The implementation device comprises a dual-polarization perfect Janus dipole and two dielectric waveguides which are arranged in parallel. The implementation method comprises the steps of designing parameters of the dielectric waveguides and the dipoles, constructing a rectangular coordinate system, placing the two parallel dielectric waveguides on an xy plane, and placing the dipoles in the middle positions of the parallel dielectric waveguides. P-polarized and s-polarized waves excited by the dipole are coupled to the dielectric waveguide to excite guided waves, an electromagnetic field on the surface of the dielectric waveguide is detected through a detection device, and the near-field coupling characteristic of the dual-polarized perfect dipole is analyzed based on extracted field distribution data. The invention provides a new way for the development of polarization multiplexing photonic devices, quantum routing and on-chip signal processing technologies.

A method includes receiving a structure including a first region and a second region, forming a dielectric layer over the first region and the second region, forming a first patterned layer of a first dipole material on the dielectric layer in the first region, performing a first thermal drive-in operation to drive the first dipole material into the dielectric layer, forming a second patterned layer of a second dipole material on the dielectric layer in the second region, performing a second thermal drive-in operation to drive the second dipole material into the dielectric layer, performing a thermal operation to adjust distribution of the first dipole material or both the first and the second dipole materials in the dielectric layer, and forming a gate electrode layer over the dielectric layer. A portion of the first region overlaps with the second region.

A multi-band base station antenna comprises: a reflector; a plurality of high-band radiators arranged on the reflector; and a plurality of low-band radiators arranged on the reflector. Each of the plurality of low-band radiators comprises: a radiation substrate; a first dipole radiator including a first+dipole arm and a first−dipole arm formed on the radiation substrate; a second dipole radiator including a second+dipole arm and a second−dipole arm formed on the radiation substrate; and a metal coupler coupled to the lower portion of the radiation substrate. The metal coupler comprises: a first coupling patch located below the first+dipole arm; a second coupling patch located below the first−dipole arm; a third coupling patch located below the second+dipole arm; and a fourth coupling patch located below the second−dipole arm.

A transparent wideband microwave absorber unit cell, a transparent wideband microwave absorber and a method of forming a transparent wideband microwave absorber, include a metal substrate, a first layer of glass attached to the metal substrate and having a first pattern of indium tin oxide (ITO) configured as a square loop centered about a central vertical axis and a second pattern of ITO including four equidistant square patches, a second layer of glass attached to the first layer of glass and having a third pattern of ITO configured as a dipole having a cross shape with a center axis coaxial with the central vertical axis, and a third layer of glass attached to the second layer of glass and having a fourth pattern of ITO configured as five circular patches, with a first circular patch located coaxially with the central vertical axis and four equidistant circular patches.

The invention relates to a p-type niobium oxide dipole-based metal-oxide-semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the MOS device is provided. A gate dielectric stack of the MOS device sequentially comprises an interface layer, a high-k dielectric layer and a p-type electric dipole layer containing niobium oxide from bottom to top. According to the preparation method, the dipole layer is deposited by adopting an atomic layer deposition process, and then atoms in the dipole layer are driven to be diffused to the interface of the high-k dielectric layer and the interface layer through high-temperature rapid annealing treatment so as to form effective electric dipoles. Compared with the prior art, the high dielectric constant characteristic is utilized, the threshold voltage can be positively regulated and controlled to a larger extent, meanwhile, the increase of EOT is remarkably inhibited, and good interface quality is kept.

The invention provides a dual-band oblique polarization common-caliber array antenna based on a tight coupling effect. The dual-band oblique polarization common-caliber array antenna comprises a dielectric substrate, a low-frequency antenna, a high-frequency antenna and a metal floor which are perpendicular to one another, the low-frequency antenna comprises a low-frequency modification dipole, a low-frequency feed balun and a low-frequency metal wide-angle impedance matching layer, and the high-frequency antenna comprises a high-frequency modification dipole, a high-frequency feed balun and a high-frequency metal wide-angle impedance matching layer. The design of the common-caliber array antenna is realized in a mode that the dual-band antenna is vertically inserted and the metal floor is shared. The antenna has the advantages of ultra wide band, beam scanning and oblique polarization, and can be used for broadband radar wireless communication.

A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Disclosed is a decoupling dipole structure that renders a midband dipole effectively transparent to a nearby lowband dipole. This not only improves the beam quality in the lowband without sacrificing beam quality in the midband, it also enables different lowband dipoles to be employed to customize the lowband performance of the multiband antenna without requiring a redesign of the midband dipoles or of the array face.

A hybrid multiport array antenna comprises a plurality of columns of hybrid dipole unit cells, each of the hybrid dipole unit cells having a first dipole of a first type, and a second dipole of a second type, wherein the first dipole of the first type and the second dipole of the second type are configured to receive a single pair of RF (radio frequency) signals, the pair of RF signals having two orthogonal polarization states, wherein the first dipole of the first type and the second dipole of the second type are spaced with an offset in a vertical direction. The arrangement of the hybrid dipole unit cells reduces the phase center distance between the dipoles in each column and between columns, thereby assuring high gain while reducing grating lobes and other signal gain degradations caused by longer distances between phase centers.

The invention relates to an in-situ cured silicon-based negative electrode lithium battery and a preparation method thereof. The in-situ cured silicon-based negative electrode lithium battery comprises a positive electrode, a silicon-based negative electrode and an in-situ solid electrolyte between the positive electrode and the silicon-based negative electrode, wherein the in-situ solid electrolyte is obtained through an in-situ polymerization reaction of a polymer precursor solution; the polymer precursor solution comprises a polymeric monomer, and the polymeric monomer contains fluoroalkyl; the material surface of the silicon-based negative electrode is rich in hydroxyl; stable combination is formed between the silicon-based negative electrode and the in-situ solid electrolyte through at least two of hydrogen-bond interaction, dipole-dipole interaction, free radical polymerization reaction and Van der Waals' force. The in-situ cured silicon-based negative electrode lithium battery obtained through interaction between a fluoroalkyl functional group of a polymeric monomer in the precursor solution and functional groups such as-OH on the material surface of the silicon-based negative electrode has excellent cycling stability at high temperature and high voltage, high energy density and safety performance.

The invention discloses a dual-linear polarization independent control low-profile reflective array antenna with a gain filtering characteristic. The antenna comprises a plane reflection array formed by a plurality of reflection units, and a horn antenna. The reflection unit comprises a magnetoelectric dipole loaded with a split ring resonator, an x polarization feed part and a y polarization feed part, each feed part comprises an independent feed arm and an open-circuit metal microstrip line patch, and the feed arm and the open-circuit metal microstrip line patch are connected through a metalized via hole; energy received by the magnetoelectric dipole in a working band can be coupled to the feed arm, transmitted to the open-circuit metal microstrip line patch from the feed arm through the metalized via hole, and reflected on the open-circuit metal microstrip line patch, so that the reflection phase can be changed by adjusting the length of the open-circuit metal microstrip line patch. A radiation zero point is introduced at a low frequency by utilizing the characteristics of the magnetoelectric dipole, and a radiation zero point is introduced at a high frequency by utilizing the half-wavelength resonance characteristics of the split ring resonator, so that the filtering characteristic is realized.

The invention belongs to the technical field of microwave antennas, and particularly provides a tight coupling phased-array antenna based on an application frequency-variable impedance matching layer, so as to solve the challenges of the existing phased-array antenna in the aspects of dynamic adjustability and environmental adaptability. The three-order Chebyshev impedance converter comprises a reconfigurable surface loaded with a diode, a bow-tie type dipole, a double-Y balun, a three-order Chebyshev impedance converter, a coaxial feed port, a metal floor, a dielectric layer, a grounding metal sheet and a metal chip resistor. The three-order Chebyshev impedance transformer, the chip resistor and the double-Y balun are cascaded to carry out broadband balanced feed on the dipole, and the dielectric constant and the magnetic conductivity of the dielectric substrate are changed through the on-off of the diode, so that the impedance matching and radiation characteristics of the phased-array antenna are improved. According to the invention, dynamic requirements of modern communication and radar systems on antenna performance can be met.

A low band dipole for a dense multiband antenna array has a plurality of dipole arms. The dipole arms have a coupling plate disposed on a first side of a PCB and a conductive trace pattern disposed on a second side of the PCB. The conductive trace pattern has a plurality of resonator block structures that are coupled together by a phase shifting trace along a first edge of the conductive trace pattern and a bandwidth compensating disposed along a second edge of the conductive trace pattern.

The utility model provides an ultra-wide-band high-performance array antenna, which comprises a plurality of ultra-wide-band oscillator units arranged on a reflecting substrate in an array form, the ultra-wideband oscillator unit comprises a plurality of radiation parts arranged on the dielectric plate at intervals, and the radiation arm of any radiation part and the radiation arm of the adjacent radiation part are collinear to form a dipole; in one radiation piece, any two adjacent radiation arms are perpendicular to each other to form a dual-polarized oscillator; the ultra-wideband oscillator unit further comprises a parasitic branch knot. The parasitic branches are arranged between every two radiation pieces, and the parasitic branches are arranged on the dielectric plate in the horizontal direction and the vertical direction; the radiation part and the parasitic branch knot are coupled and connected to form a frequency expanding structure. According to the utility model, the S parameter of the oscillator unit is optimized by arranging the coupling frequency-broadening structure and the parasitic branch knot, electromagnetic waves are guided through the cooperation of the reflecting strip, the isolating strip and the director, the interference of high frequency to low frequency is reduced, the standing-wave ratio of the antenna is further reduced, and the directivity of the antenna is improved.

The invention relates to the technical field of ultra-wideband antennas, and discloses an ultra-wideband wide-angle scanning tight coupling antenna and array, and the antenna comprises an impedance matching layer, an antenna radiation layer, an antenna supporting layer and a metal floor which are stacked from top to bottom. The impedance matching layer comprises three layers of eccentric cross-shaped dielectric plates, and the first eccentric cross-shaped dielectric plate at the top layer and the second eccentric cross-shaped dielectric plate at the middle layer are provided with circular grooves at the intersection center position of the two groups of orthogonal dipoles; the antenna radiation layer is provided with two groups of orthogonally arranged unequal-width pentagonal dipoles; the antenna supporting layer is provided with two groups of feed short circuit columns and two groups of metal rib belts; and the metal floor is provided with a two-section stepped feed through hole. According to the invention, the scanning range is expanded under the condition of ensuring good matching.

The invention discloses a non-uniform compression high-order mode + / -45-degree dual-polarized base station antenna. The non-uniform compression high-order mode + / -45-degree dual-polarized base station antenna comprises a single-layer dielectric substrate, two pairs of non-uniform compression five-order mode dipoles and two pairs of fundamental mode dipoles, wherein the two pairs of non-uniform compression five-order mode dipoles are printed on the single-layer dielectric substrate; a balun coupling feeding mode is adopted, and SMA is used for exciting a high-order mode dipole and a fundamental mode dipole to generate radiation. According to the non-uniform compression high-order mode + / -45-degree dual-polarized antenna, due to the introduction of the non-uniform compression high-order mode dipole, the gain is effectively improved, the phase of an electric field is adjusted through the bending of the coplanar strip line, the amplitude of the electric field is adjusted through the adjustment of the size of the coplanar strip line and the design of the reflecting plate, and the cross polarization ratio is effectively improved.

The invention provides a heart model calibration method and system, electronic equipment and a medium. The heart model calibration method comprises the following steps: acquiring to-be-calibrated magnetocardiogram data by utilizing a sensor array; processing the to-be-calibrated magnetocardiogram data by using a time sequence so as to identify an R moment corresponding to a ventricular depolarization peak value; calculating based on the spatial distribution of the sensor array to obtain the direction of an equivalent current dipole at the R moment; and constructing a rotation matrix according to the long axis direction of the general heart model and the direction of the equivalent current dipole at the R moment, and calibrating the heart model corresponding to the to-be-calibrated magnetocardiogram data by using the rotation matrix. According to the heart model calibration method, the magnetocardiogram data can be automatically calibrated, and an accurate personalized heart model can be generated without depending on individual historical physiological data.

The present teachings relate to a polymer system including a coacervate or precipitate formed through dipole-charge interactions or dipole-dipole interactions such as between a polyelectrolyte and a polyzwitterion, which form a polyzwitterionic complex. The polymer system can be used to deliver an encapsulated cargo, for example, a therapeutic drug product, which is released when the ambient pH increases.

This application provides a multi-band shared-aperture antenna. The multi-band shared-aperture antenna includes a first antenna array, a second antenna array, and a reflection panel, where the first antenna array includes four first dielectric plates perpendicular, two adjacent first dielectric plates are perpendicular to each other, the first antenna array includes four hollowed butterfly dipole units, the dipole unit includes two radiation arms, the two radiation arms are respectively printed on two adjacent first dielectric plates, the radiation arm includes a first part and a second part, a first feeding stub is disposed on the first dielectric plate, the second part has a specified width in a direction perpendicular to the reflection panel, the second antenna array includes a plurality of second dielectric plates, four ring-shaped coils are disposed on any one of the second dielectric plates, and the ring-shaped coil is connected to a second feeding stub.

Photonic controlled-phase gates that include a dipole emitter chirally coupled to a plurality of photonic qubit pairs in a waveguide are disclosed herein. Each photonic qubit pair includes a two-qubit state |xy, wherein the two-qubit state |xy comprises a combination of single-qubit states |0 and |1, and may be |00, |01, |10, and |11. The dipole emitter is configured to interact with the single-qubit state |0 to impose a π phase shift, and the dipole emitter interacts with states |00, |01, and |10 to impose the π phase shift.