430 results about "Facet" patented technology

In a general aspect, unique unclonable physical identifiers are applied and used. A method of applying the unique marker can include receiving an object having a surface feature and forming a unique marker on the surface feature of the object. The unique marker includes a distribution of elements and conforms with a morphology of the surface feature. The method further includes extracting orientation information from the unique marker. The orientation information can indicate relative spatial orientations of the respective elements. The method additionally includes generating a unique code for the object based on the orientation information. The surface feature can be facets, surface patterns, textures, or other indentations of the object. The surface feature can include a region of the object that is susceptible to tampering.

An illumination optic (11) for projection lithography has a transmission facet mirror (6), an illumination specification facet mirror (7), and a monitoring device (28). The latter has at least one spatially resolving monitoring sensor (29) and a satellite facet (30), which belongs to the transmission facet mirror (6) and is each assigned to exactly one monitoring transmission facet (21). The satellite facet (30) is oriented such that monitoring light (3) from a monitoring light source (2) is guided via the satellite facet (30) and a monitoring illumination control facet (25), which is assigned to the monitoring transmission facet (219) via an illumination channel (27), along a monitoring light channel (31) to the monitoring sensor (29). This results in an illumination optic in which a tilting of illumination control facets of an illumination control facet mirror can be effectively monitored.

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has an elliptical cross-section with a major axis and a minor axis. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

The invention relates to a SiC crystal ingot facet detection method based on Raman combined with resistivity detection, which comprises the following steps: S1, providing a silicon carbide workpiece, acquiring resistivity rho k of different detection areas on the surface layer of the workpiece based on a preset resistivity detection scanning path, and further preliminarily screening out resistivity abnormal areas; s2, on the basis of a preset Raman detection scanning path, obtaining the edge area on the surface layer of the workpiece, the Raman characteristic peak frequency omega ij of different detection points of the resistivity abnormal area obtained in the S1, a detection image, and an XY coordinate position on an XY plane perpendicular to the height direction of the workpiece; and S3, based on a preset n-rho inverse proportion function model of the doping concentration n and the resistivity rho, and a delta omega-n linear model of the Raman frequency shift delta omega and the doping concentration n, determining and associating the XY coordinate positions of the S2 and the corresponding resistivity rho ij, and constructing a resistivity distribution diagram of the surface layer of the workpiece. The method has the advantages of small detection error and short detection time.

The invention provides a SiC crystal with a facet at an edge, a wafer thereof and a semiconductor device, and relates to the technical field of silicon carbide wafers. The SiC crystal contains a facet region and a non-facet region; the facet area is located on the outer circumferential end face of the SiC crystal, the distance between the edge, away from the outer circumferential end face, of the facet area and the outer circumferential end face does not exceed 3% of the diameter of the SiC crystal, and the SiC crystal is obtained through direct growth by adopting a PVT method and is not subjected to subsequent processing. According to the SiC crystal disclosed by the invention, the facet area is fixed at the edge position of the crystal, and the facet area is removed in the subsequent crystal processing process, so that no facet area exists on the whole crystal and a wafer processed along with the crystal at a relatively low cutting loss rate.

To provide a SiC ingot easily processed during laser processing.SOLUTION: A SiC ingot has a facet surrounded with the minimum area when setting a diameter to D and plan-viewed from a crystal growth direction. When setting the length of the first side of a virtual rectangle having a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction to Lx, Lx / D<0.3 is satisfied in a first end being an end in the crystal growth direction.SELECTED DRAWING: Figure 3

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has an octagon-shaped cross-section. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has a pear-shaped cross-section with a rounded end a tapered end narrower than the rounded end. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

A display of real world scenes comprising one or more optical mirror film surfaces having one or more selected deformations on said surfaces comprising one or a plurality of selected extended line indentation ordered deformations forming facets, including a selected plurality of selected disordered and ordered deformations forming a plurality of flat mirror facets, a plurality of folded mirror ridges, and a plurality of mirror vertices capable of capturing and transforming said scenes into other-worldly virtual images for recorded play back video image of said virtual images and other applications; including a method of imposing one or more selected ordered and disordered deformations on said mirror film surface irreversibly as a means of forming surfaces useful for the function of said virtual imaging display.

The invention relates to the technical field of intelligent numerical control machining, in particular to a Tri-dexel model efficient cutting simulation method based on octree acceleration, and the method comprises the steps: firstly selecting a three-dimensional model needing Tri-dexel processing; performing grid division on the three-dimensional model to obtain a plurality of triangular grid units, and generating a Dexcel ray according to the three-dimensional model; triangular patches in the triangular mesh are stored in an octree form; grouping the Dexcel rays according to the depth of the octree, and searching patches possibly intersected with the Dexcel rays in the octree by using the Dexcel rays for intersection; performing de-duplication processing on the repeated intersection points; the intersection points of the same Dexel ray are connected in pairs, and finally a Tri-dexel model is generated; and then the Tri-dexel model of the workpiece cut by the tool can be obtained through the one-dimensional Boolean operation of the Dexcel line segment between the workpiece and the Tri-dexel model of the tool. Through verification, the Tri-dexel efficiency of the complex three-dimensional model in machining simulation is improved, and the calculation amount and the storage space of machining simulation can be effectively reduced when a complex three-dimensional scene in numerical control machining simulation is coped with.

The invention relates to the technical field of anti-counterfeiting, and discloses an anti-counterfeiting element, which comprises a dynamic pattern, the dynamic pattern comprises at least one bright line, and a region where the bright line moves is a feature region; the feature region comprises a plurality of curved surface structures, each curved surface structure has a plurality of light coordinates parallel to the surface of the feature region, each light coordinate comprises a first direction and a second direction, and each light coordinate is in one-to-one correspondence with line segments with different curvatures on the bright line; the curved surface structure is bent in the first direction, and the bending degree of the curved surface structure in the second direction is smaller than that of the curved surface structure in the first direction. The curved surface structure is bent along the first direction, so that the emergent light of the curved surface structure can be emitted in a fan-shaped direction range under the incident light in the preset direction, and the angle distribution of the emergent light is more uniform, that is, the single curved surface structure can obtain a combined effect equivalent to that of a plurality of reflective facets in the prior art; and the dynamic effect of bright line movement is clearer.

The invention relates to the technical field of anti-counterfeiting, and discloses an anti-counterfeiting element which comprises a base material, the surface of the base material is provided with a feature area, and the feature area comprises a plurality of curved surface structures; the curved surface structure has a first direction and a second direction which are parallel to the surface of the base material, the curved surface structure is bent in the first direction, and the bending degree of the curved surface structure in the second direction is smaller than that of the curved surface structure in the first direction. The plurality of curved surface structures are arranged in the characteristic area, and each curved surface structure is bent along the first direction, so that the emergent light of the curved surface structures can be emitted in a fan-shaped direction range under the incident light in the preset direction, the angle distribution of the emergent light is more uniform, and the light emitting efficiency is improved. Therefore, even if a single curved surface structure can obtain a combined effect equivalent to that of a plurality of reflective facets in the prior art, not only can a dynamic effect with higher resolution be realized, but also a finer and more stable appearance pattern can be realized, and the visual angle range is widened.

The invention relates to a wavelength-switchable, semiconductor laser (10), for generating of laser light in the optical range between 1 μm and 100 μm, wherein the laser (10) comprises an external cavity (11) and at least the following components: a semiconductor optical amplifier (12), comprising an intra-cavity facet (121) facing towards; a first optical element (13) for collimating a laser beam exiting the intra-cavity facet (121) arranged at the intra-cavity facet (121) of the semiconductor optical amplifier (12); a transmissive, wavelength-adjustable interference filter (1), comprising at least i) a wavelength-adjustable Fabry-Perot filter (100) and ii) a Fabry-Perot etalon (110) comprising a first planar surface (111) and a second planar (112) surface, wherein the first and second surface (111, 112) of the etalon (110) are arranged opposite and plane-parallel to each other and delimit an etalon cavity (113); wherein the Fabry-Perot etalon (110) and the Fabry-Perot filter (100) are arranged in a row; wherein the interference filter (1) is arranged between the first optical element (13) and the beam splitter (14), and wherein the components are arranged such that laser light comprising a selected laser wavelength can stably resonate in the external cavity, wherein an on-axis, retro-reflecting beam splitter (14) is arranged at one end of the external cavity (11). Furthermore, the invention relates to a method for selecting a laser wavelength using the laser.

Techniques for implementing image rotation control using reflective waveguide facets in an AR eyewear display system are disclosed. A facet (602) is disposed in a light propagation path located between a first surface (S1) and a second surface (S2) of a waveguide (600) and is arranged to guide propagation of light for a display through the facet from the first surface to the second surface. Using this configuration, light is transmitted through the facet as it guides propagation of the light from the first surface to the second surface, which reduces the amount of image rotations or inversions that would otherwise be induced in the waveguide using conventionally oriented facets and thus simplifies or optimizes the design of other aspects of an AR eyewear display system, such as display source placement or orientation or form-factor bulkiness.

Examining a light optical element (LOE) may include placing a first slit optically between a projector configured to emit light and the LOE's first major surface and placing a second slit optically between the LOE's second major surface and a detector. Facet parallelism between two facets may be deduced based on a shift of the image reflected from the first facet to the second facet relative to light transmitted normal to the first and second major surfaces through a portion of the substrate not including a facet. Facet refractive index homogeneity or deviation may be deduced based on the light transmitted through the facet relative to light transmitted normal to the first and second major surfaces through a portion of the substrate not including a facet.

To provide an SiC ingot capable of realizing both of high quality and workability.SOLUTION: This SiC ingot has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an inside boundary between the facet and the step flow growth region has: a first slope inclined in a [-1-120] direction with respect to a crystal growth direction; and a second slope inclined in a [11-20] direction with respect to the crystal growth direction. An inflection point between the first and second slopes is nearer a first end on a Si face side than a center position of ingot length.SELECTED DRAWING: Figure 1

To provide an SiC ingot easy to be laser-processed.SOLUTION: This SiC ingot is made of an SiC single crystal inclined by an offset angle from a (0001) face and crystal-grown from a first end toward a second end, and has a step-flow growth region, and a facet. On a cross section passing through a center in a <11-20> direction, an angle θ1 formed by an inside boundary between the facet and the step flow growth region and a crystal growth direction is 56° or less.SELECTED DRAWING: Figure 1

The present application relates to the anti-counterfeiting technical field and discloses an anti-counterfeiting element that comprises: a dynamic pattern, wherein the dynamic pattern comprises at least one bright line, and a feature area is an area range within which the bright line moves; wherein the feature area comprises a plurality of curved-surface structures, each curved-surface structure has a plurality of light coordinate zones parallel to a surface of the feature area, each of the light coordinate zones includes a first direction and a second direction, respective ones of the light coordinate zones correspond to line segments with different curvatures on the bright line in one-to-one correspondence; the curved-surface structure is shaped in a curved manner along the first direction, wherein a bending degree of the curved-surface structure along the second direction is less than that of the curved-surface structure along the first direction. By arranging each curved-surface structure to be shaped in a curved manner along the first direction, for incident light in a predetermined direction, emergent light from the curved-surface structure can come out over a fan-shaped direction range, so that angle distribution of the emergent light is more uniform, that is, an effect equivalent to the combination effect obtained by a plurality of reflective facets in the prior art can be obtained with each single curved-surface structure, therefore, a clearer dynamic effect can be achieved for movement of the bright line.

An arrangement (100), a method and a computer program product for system-integrated calibration of facet mirrors (18, 19) of a microlithographic illumination system (20). Beam paths (103) between a radiation source (101) and a radiation detector (102) are created by the facet mirrors (18, 19), with respectively only one pivotable micromirror (18″, 19″) of each facet mirror (18, 19) affecting said beam path. By methodically pivoting one of the micromirrors (18″, 19″) affecting the beam path (10), it is possible, based on the radiation detector (102), to find a specific optimal pivot position, the underlying orientation of the micromirror (18″, 19″) of which can also be calculated geometrically. By comparing the calculated orientation with the orientation ascertained by a tilt sensor on the micromirror (18″, 19″), it is possible to calibrate the tilt sensor or micromirror (18″, 19″) of the facet mirror (18, 19).

A method and system for determining a pupil profile for imaging a pattern on a substrate in a lithographic process is disclosed. Data indicative of a relationship between a lithographic performance change and a source change throughout the pupil plane is obtained, based on which the first pupil profile is optimized to generate a second pupil profile. The second pupil profile is a discrete pupil profile corresponding to a desired free-form pupil profile that can be used to print a pattern on a substrate using a lithographic apparatus. An illumination system (e.g., a field facet mirror) may be configured based on the second pupil profile to print a pattern on the substrate.

A faceted mirror (6) for an illumination optic for projection lithography is suitable for use as a first faceted mirror such that groups of individual mirrors of the faceted mirror (6) are imaged as first facets by means of a transmission optic into at least subfields of an object field of the illumination optic in which an object can be arranged which is displaced through the object field along an object displacement direction (y) during a projection exposure. The faceted mirror (6) has an array arrangement of individual mirror units (26), wherein each of the individual mirror units (26) is configured as a sub-array of N x M individual mirrors (21). The faceted mirror (6) has at least two pre-tilt types (321, 322) of the individual mirror units (26).A first tilting type (321) has individual mirror units (26) which, in a neutral position, exhibit a first tilting angle relative to a basic angle defined by a support geometry of the faceted mirror (6). A second tilting type (322) has individual mirror units (26) with a second tilting angle. The tilting angles of the different tilting types (321, 322) differ from each other. This results in a faceted mirror in which the requirements for a tilting actuator for tilting the individual mirrors of the faceted mirror are reduced.

The utility model relates to the technical field of jewelry, in particular to a measuring device for facet type gem processing, which comprises an arc plate, scale marks and an arc positioning groove are arranged on the arc plate, one end of the arc plate is provided with a fixed arm extending towards the circle center direction of the arc plate, the extending end of the fixed arm is hinged with a movable arm, and the movable arm is provided with a rotating shaft. A pointer is arranged at the free end of the movable arm, and a locking piece which is in sliding fit with the arc positioning groove and used for locking the movable arm is arranged on the movable arm. The measuring device is convenient to measure the machining angle of the faceted gem, can improve the efficiency of grinding the gem, and improves the yield and quality of products.

A measuring device (24) has two faceted mirrors (20, 21), the individual mirrors (21) of which can be tilted via respective tilting actuator devices, each with at least one tilting actuator (23a). The two faceted mirrors (20, 22) can be used as illumination optics for a projection exposure system. The individual mirrors (23) of the second faceted mirror (22) are part of a transmission optic via which the individual mirrors (21) of the first faceted mirror (20) can be projected onto an object field (5) illuminated by the illumination optic (4). The measuring device has a measuring light beam selection device (27) by means of which at least one measuring light beam (25i) can be selected, which is guided over at least one of the individual mirrors (21, 23) of the faceted mirrors (20, 22). A detection device (28) of the measuring device serves to detect the at least one measuring light single beam (25i).A control unit (29) of the measuring device is in signal communication with the tilting actuators of the object-side measuring light beam selection device (27) and the detection device (28). This results in a measuring device with increased operational flexibility.

A method for operating a projection exposure system (1) comprises the following steps: providing a projection exposure system (1) with a radiation source (1) for generating illumination radiation (3), an illumination optic (11) for transferring the illumination radiation (3) from the radiation source (2) to an object field (8) extending in a scan direction (y) and a cross-scan direction (x), wherein the illumination optic (11) has at least one faceted mirror (6, 7) with a plurality of individual mirrors, and wherein at least a subset of the individual mirrors is configured such that they only partially illuminate the object field (8) in the scan direction (y), and a projection optic (10) for imaging a reticle (12) arranged in the object field (8) of the illumination optic (11) onto a wafer (19) arranged in an image field (17) of the projection optic (10), and specifying a set of at least one element of field-dependent aberrations. (Ai(x, y);i=(1..M)), specification of a target vector (Z(x) = (Z1(x), ..., Z; M (x) T ) for the target values ​​Z i (x) of the aberrations Ai(x, y) after averaging over the scan direction (y), dividing the extent of the object field (8) in the scan direction (y) into j ≥ 2 intervals ([y0; y1], ..., [y j-1 ; y j ]) and determining scan weights (gi(x, y)) which characterize a dependence of an illuminance at a location x in the cross-scan direction in the object field () on a position in the scan direction (y) such that a deviation of a weighted aberration vector A weighted ( x ) → : = ∑ gi A l → is reduced from the target vector (Z(x)).

Systems and methods for identifying gemstones include systems and methods for obtaining a set of measurements for a gemstone, deriving measurements of edges and / or facets of the gemstone and creating feature sets based on the derived measurements for comparison and matching to recorded features of gemstone records in a database. Systems and methods for creating a database of gemstone records are also described.

The invention provides a space target spectral imaging simulation method based on a space-based observation scene. The method comprises the following steps: (1) inputting attitude and orbit parameters and simulation time parameters of a space target and a spectral imager; (2) establishing a space-based observation scene by using the parameters in the step (1), and obtaining position, attitude and speed information; (3) carrying out target visibility analysis, and firstly judging an earth shadow area; (4) judging sight shielding; (5) performing imager view field constraint judgment; (6) carrying out radiation transfer modeling, analyzing surface element visibility and calculating a spectral radiance image at the entrance pupil of the spectral imager; and (7) carrying out spectral imager modeling, and generating a simulation image by using the spectral radiance image at the entrance pupil obtained in the step (6). According to the method, dynamic simulation is carried out in combination with a track and relative motion, factors influencing target visibility are considered in detail, and the full-link simulation method under the space-based observation scene is constructed by considering the reflection characteristic in the direction of a material and visibility of different surface elements.

A faceted mirror (7) for an illumination optic for projection lithography is suitable for use as a second faceted mirror such that first facets of a first faceted mirror are imaged, by means of a transmission optic comprising second facets (25) of the second faceted mirror (7), at least into subfields of an object field of the illumination optic in which an object can be arranged that is displaced through the object field along an object displacement direction during a projection exposure. The faceted mirror (7) has at least two pre-tilt types (431, 432, 433, 434) of second facets (25). A first pre-tilt type (431) has second facets (25) which, in a neutral position, exhibit a first pre-tilt angle relative to a basic tilt angle defined by a support geometry of the faceted mirror (7). A second forward tilt type (432) has second facets (25) with a different forward tilt angle.The result is a faceted mirror in which the requirements for a tilting actuator for tilting individual mirrors of the faceted mirror are reduced.

A high-uniformity SiC crystal, a crystal bar, a substrate and a semiconductor device are provided. The SiC crystal is obtained by direct growth through a PVT method without subsequent machining, and includes a facet region and a non-facet region. The facet region is located on an outer-circumference end face of the SiC crystal. A doping concentration change rate of the facet region is 1.5 times or above that of the non-facet region; and / or a carrier concentration change rate of the facet region is 5 times or above that of the non-facet region.

The invention relates to the technical field of semiconductor processing, in particular to a method and equipment for efficiently detecting a facet area of a crystal ingot. The invention aims to provide the high-efficiency detection method for the small-surface area of the crystal ingot, which is characterized in that a laser beam is shaped into a rectangular laser to be output, point laser scanning is replaced by surface laser scanning, and a single scanning area is expanded, so that the scanning efficiency is improved, the information missing of the end surface of the crystal ingot is avoided, and the efficiency and the resolution of the detection of the end surface of the crystal ingot are higher; meanwhile, the silver reflector is adopted to obtain the light intensity distribution of the rectangular laser, and then the light intensity distribution of the reflected light of the crystal ingot is corrected, so that the influence of non-uniform light intensity of the rectangular laser on the light intensity distribution of the reflected light of the crystal ingot is avoided, and the measurement precision is improved.

A field facet mirror for an illumination optic for EUV projection lithography is designed for arrangement in the area of ​​a field plane of the illumination optic. The field facet mirror has a plurality of field facets (25 T ) for the reflective transfer of illumination light (16) from a light source to an object field with a predetermined distribution of illumination light intensity over a field height of the object field. At least some of the field facets are designated as partial field illumination facets (25 T ) executed. These have a partial field illumination facet reflection section (31) for the reflective transfer of the illumination light (16) TF ) as useful illumination light from the light source towards a partial object field section of the object field that is smaller than the object field. Furthermore, the respective partial field illumination facet (25 T) an output-coupling facet reflection section (32) for the reflective transfer of the illumination light (16 AK ) as output illumination light from the light source to at least one output coupling component. The partial field illumination facet reflection section (31) on the one hand and the output coupling facet reflection section (32) on the other hand are fixed components of the respective partial field illumination facet (25). T ) represents. This results in a field facet mirror, which allows for a demanding specification of an illumination intensity distribution over at least one object field coordinate without undesirable side effects.