62 results about "Selenium" patented technology

The invention discloses a method for recovering valuable metals from copper anode slime step by step, and belongs to the technical field of metallurgy and chemical industry. According to the method, through control over the oxidation-reduction potential, the oxidation-reduction potential is high in the leaching stage, and it is guaranteed that gold, selenium, tellurium and the like can be oxidized to enter a leaching solution; in the reduction stage, gold, selenium and tellurium products are reduced step by step according to the difference of gold, selenium and tellurium in reduction potentials; in the leaching stage, soluble chlorine salt is added while enough oxidation potential is guaranteed, enough chloride ions are provided for the solution, and therefore gold can enter the solution in the form of AuCl4-(tetrachloroauric acid); meanwhile, in the oxidation leaching stage, a small amount of silver enters the solution in the form of silver sulfate or silver complex, and under the condition that enough chloride ions are provided, silver is precipitated and retained in residues in the form of silver chloride, so that separation of gold and silver is achieved, and meanwhile dispersion of gold and silver in the leaching process is reduced. According to the method, valuable metal is efficiently separated and recycled.

The application provides a method for separating selenium tellurium from high-selenium tellurium dioxide through multistage conversion, and belongs to the technical field of non-ferrous metallurgy. The method comprises the following steps: a, material preparation; b, primary conversion leaching: selectively reducing selenium in a solution containing a reducing agent at pH 8-11 to obtain a selenium tellurium-containing residue and a primary leaching solution; c, secondary conversion leaching: selectively leaching tellurium in a strong alkaline solution containing a reducing agent to obtain elemental selenium and a secondary leaching solution; and d, neutralization treatment: combining the two leaching solutions and adding acid to obtain high-purity tellurium dioxide. The method is simple to operate, short in production cycle, and realizes efficient separation of selenium tellurium. The purity of the obtained elemental selenium is greater than or equal to 95%, the purity of the obtained tellurium dioxide meets the requirements of electrodeposition for producing 4N tellurium, and the method is suitable for large-scale production.

The application discloses a comprehensive treatment method of platinum-palladium slag and relates to the technical field of nonferrous metal smelting. After sulfuric acid roasting of the platinum-palladium slag, flue gas is introduced into a selenium absorption tower; the roasted slag is hydrolyzed, and tellurium is recovered by reduction of a dissolved solution; after the tellurium is precipitated, the dissolved solution is introduced into a copper recovery procedure; gold is recovered by chlorination and dissolution in the dissolved slag, and the gold-recovered slag is introduced into silver recovery; gold powder is obtained by reduction of the gold-recovered solution; platinum and palladium are precipitated from the gold-reduced solution; ammonia is added to the platinum and palladium precipitate to separate platinum and palladium; the separated platinum and palladium is refined to recover platinum and palladium; platinum and palladium are reduced from the platinum and palladium precipitated solution to obtain platinum and palladium precipitate and platinum and palladium reduced solution, and the platinum and palladium precipitate is returned to the roasting procedure; tellurium is reduced from the platinum and palladium reduced solution to obtain tellurium powder and tellurium reduced solution, and the tellurium reduced solution is introduced into a wastewater treatment procedure. The application has the beneficial effects that selenium and tellurium, copper, gold, silver, platinum and palladium are stepwise separated and recovered, the recovery rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The application relates to an ultrasonic treatment method of high-impurity copper anode slime. The ultrasonic treatment method is realized through hierarchical ultrasonic strengthening and synergistic leaching. In the first-stage leaching, hydrogen peroxide-oxygen-rich air composite oxidants are combined with ultrasonic cavitation effects to realize efficient oxidation leaching of arsenic, antimony and bismuth; in the second-stage leaching, sulfuric acid-sodium sulfite mixed leaching agents are used to remove harmful impurities such as arsenic, antimony and bismuth under ultrasonic strengthening, and to efficiently enrich valuable metals such as gold, silver, selenium and tellurium, so that the treatment period is shortened, energy consumption and reagent consumption are reduced, resource comprehensive utilization is improved, and the method is suitable for efficient separation and resource recovery of high-impurity copper anode slime containing refractory impurities such as arsenic, antimony and bismuth and valuable metals such as gold, silver, selenium and tellurium.

The application provides a method for estimating the temperature of the formation of a granite type uranium deposit based on the content of arsenic and selenium in pyrite, which comprises the following steps: firstly, collecting ore samples of the uranium deposit through field geological investigation; then, observing the ore samples under a microscope and analyzing the elements in the laboratory after processing the ore samples; and finally, processing the laboratory data and comprehensively estimating the temperature of the formation of the uranium deposit. The application has reasonable design and simple process, and is simple to operate and has low technical difficulty in estimating the temperature of the formation of the granite type uranium deposit, which is of great significance for deeply understanding the cause of the uranium deposit and predicting the prospect of the formation of the uranium deposit in the deep part.

This invention discloses a method for the tiered extraction of copper anode slime from co-smelting copper anodes, belonging to the fields of resource comprehensive utilization and non-ferrous metal metallurgy. The method is used to treat copper anode slime produced after co-smelting waste circuit board pyrolysis residue and copper sulfide ore, followed by blowing and electrolytic refining. The method includes: sulfidation leaching of the copper anode slime to preferentially allow tellurium to enter the leachate; reduction precipitation of the tellurium-containing leachate to recover tellurium products; atmospheric pressure mixed acid leaching of the sulfidation leaching residue to preferentially allow copper and selenium to enter the leachate, yielding a copper-selenium-containing leachate and a precious metal-enriched slag; chlorination leaching of the precious metal-enriched slag to allow gold to enter the chlorinated leachate and separate from silver; and SO2 reduction precipitation and extraction separation of the copper-selenium-containing leachate to sequentially recover selenium and copper. This method can achieve tiered separation and efficient recovery of Te, Se, Au, Ag, and Cu from novel copper anode slime produced by co-smelting, and has the advantages of a clear process, good selectivity, and suitability for closed-loop operation.

The invention discloses a selenium-modified nickel-vanadium layered double hydroxide electrode material for a supercapacitor and preparation and application thereof, and belongs to the technical field of supercapacitors. The material initiates an'intercalation pre-modification-selenylation cooperation 'structure regulation strategy, and is realized through a two-step hydrothermal method: firstly, in-situ intercalation of graphene quantum dots is carried out in a NiV-LDHs hydrothermal growth stage to serve as an interlayer support and an initial conductive network, hexamethylenetetramine is used for assisting formation of a layered precursor, a double-reducing-agent system is used for synergistic in-situ selenylation, and the graphene quantum dot / NiV-LDHs composite material is obtained. Se < 4 + > is adsorbed and anchored by using pi-pi of the GQDs, so that double-site uniform distribution of selenium on the surface of the laminate and the interface of the GQDs is realized. According to the method, the limitation of a traditional step-by-step process is broken through, the integrity of a layered structure, the continuity of a conductive network and the uniformity of selenium modification are synergistically guaranteed, the interlayer spacing of the obtained material is increased to 1.22 nm, active sites are fully exposed, and the material has high specific capacitance and high rate performance and is suitable for a high-performance supercapacitor electrode.

This invention relates to the field of crystal material preparation technology, specifically to a ternary layered selenide Ge 0.85 Bi 2.15+x Se4 semiconductor material and its preparation method. The preparation method includes the following steps: according to the chemical formula Ge... 0.85 Bi 2.15+x The molar ratio of germanium powder, bismuth powder, and selenium powder in Se4 is weighed, where 0 ≤ x ≤ 0.06. The weighed raw materials are mixed evenly and placed in a quartz tube. The quartz tube is then sealed under vacuum. The vacuum-sealed quartz tube is placed in a heating furnace and heated from room temperature to 900-950℃, held at this temperature for 12-24 hours. After the holding period, the quartz tube is removed from the heating furnace and quenched. The quenched and cooled quartz tube is then placed back in the heating furnace and heated from room temperature to 540-560℃, held at this temperature for 3-5 days for annealing, thus obtaining the ternary layered selenide Ge. 0.85 Bi 2.15+x Se4 semiconductor material. This invention successfully solves the technical problem of obtaining a single phase in the GeBi2Se4 system by precisely controlling the Ge / Bi ratio and employing high-temperature quenching and low-temperature long-time annealing processes.

The application discloses a high-heat-resistance tellurium-copper alloy strip and a preparation process thereof, and relates to the technical field of tellurium-copper alloys. Step 1: electrolytic copper, pure tellurium, pure selenium and copper-cerium intermediate alloy are mixed, smelted and semi-continuously cast to obtain a base casting; step 2: the base casting is sequentially subjected to homogenization annealing, hot rolling, solid solution annealing, aging treatment, two-rolling and stress relief annealing to obtain the high-heat-resistance tellurium-copper alloy strip. The high-heat-resistance tellurium-copper alloy strip comprises the following components: 0.1wt%-0.5wt% of tellurium, 0.01wt%-0.03wt% of cerium, 0.05wt%-0.15wt% of selenium, impurity content <0.3wt% and the rest of copper. In the application, the mechanical properties and high-temperature stability are synergistically improved by regulating and controlling selenium and cerium; and the high-temperature resistance is further improved on the basis of ensuring the electric conductivity through a surface laser cladding enhancement layer, thereby providing reliable guarantee for the application of the alloy strip in a high-temperature complex environment.

The application discloses a preparation method, a preparation system, a product and application of a selenium-tellurium vanadium material, and belongs to the technical field of material preparation. The application provides a method for preparing a large-area single-layer selenium-tellurium vanadium ternary topological composite material, which comprises the following steps: S1, depositing vanadium oxide on a substrate to obtain a vanadium oxide film; S2, reacting the vanadium oxide film obtained in the step S1 with a selenium source and a tellurium source in an environment containing inert gas and hydrogen, and naturally cooling to obtain a selenium-tellurium vanadium material. The selenium-tellurium vanadium material prepared by the method has the advantages of lower resistivity and higher conductivity, and exhibits unique advantages in the next generation of electronic, energy and quantum devices, so that large-area device manufacturing with high performance and low power consumption can be realized.

The invention discloses a method for directionally extracting selenium by controlling arsenic and lead from copper telluride slag, and relates to the technical field of recycling of scattered metal resources. Aiming at the problems of lead and arsenic volatilization pollution, low selenium recovery efficiency, dependence on high temperature and the like in the traditional copper telluride slag treatment, the method sequentially comprises the following steps: performing low-temperature phase reconstruction, directional capture and controlled potential reduction treatment: firstly, grinding and screening the copper telluride slag, then mixing the copper telluride slag with ferric sulfate and hydrogen peroxide, and performing low-temperature phase reconstruction to generate selenium-containing flue gas; then, a mixed solution of sodium hydroxide and sodium sulfide is used for directionally trapping the flue gas to obtain selenium-rich liquid, and finally, selenium is selectively separated out to obtain refined selenium by controlling the temperature, introducing sulfur dioxide and accurately controlling the potential of the solution. The method can effectively inhibit volatilization of lead and arsenic, realizes high-efficiency separation of selenium and lead and arsenic at a low temperature, has the advantages of high comprehensive recovery rate of selenium, high purity of refined selenium, simple process and low energy consumption, and has a good industrial application prospect.

Disclosed is a method for producing an alloy, which comprises: a step for obtaining a mixed solution in the presence of a solvent of a salt of two or more metals capable of constituting an alloy selected from among transition metals of groups 3-12, aluminum, silicon, gallium, germanium, arsenic, selenium, indium, tin, antimony, tellurium, lead, bismuth, and lanthanide elements, and an alkaline earth metal salt; a step for obtaining an oxide precursor by drying and heating the mixed solution; a step for obtaining a product by heating and reducing the oxide precursor, a reducing agent selected from the group consisting of an alkaline earth metal, a hydride of an alkaline earth metal, and a hydride of an alkali metal, and an alkali metal salt or a molten salt of an alkaline earth metal salt in the presence of an inert gas; and a step for obtaining an alloy by washing the product. The invention also provides a manufacturing method of the catalyst of the alloy.

The invention relates to a high-activity nano-enzyme with rich gold nano-islands and a preparation method and application of the high-activity nano-enzyme. The invention belongs to the technical field of nanomaterials. The preparation method comprises the following steps: preparing a tellurium-selenium nanorod from a tellurium precursor substance, a selenium precursor substance and a reducing agent; and carrying out chemical reaction on the precursor substances of platinum and gold by taking the precursor substances as a chemical template. Wherein after a gold precursor substance is added, a large number of tiny gold particles distributed on the surface of the nanorod like islands are generated through chemical reaction between the gold precursor substance and a template component, so that more modification sites can be provided, the catalytic activity of the material is improved, the distance between a modification substrate and the platinum surface is closer, and efficient catalytic reaction is realized. The problems that in an existing combination mode of the platinum / gold heterostructure, gold particles and platinum particles are connected through a very small number of heterointerfaces, so that modifiers of gold particle parts are possibly far away from platinum particle parts, and catalytic reaction of platinum on the modifiers is not facilitated are solved.

The invention discloses a novel exploration method for selenium-enriched mineral water resources, and relates to the technical field of resource exploration. The method comprises the following steps: collecting existing geological profile, drilling, rock core, hydrochemical, humanistic, physical exploration and environmental quality data of a certain area, preprocessing the collected data, constructing a multi-source data integration platform, preliminarily screening and locking an exploration area according to the multi-source data integration platform, carrying out field investigation on the locked exploration area, collecting a rock sample and a water sample, and carrying out real-time monitoring on the rock sample and the water sample. Carrying out a rock analysis experiment and a water sample analysis experiment through the obtained rock sample and the water sample, carrying out multi-source data fusion and delineating a target region according to a hydrogeological profile and an analysis result of field investigation, constructing a model according to the result to predict a water source point, and collecting a sample water sample from the predicted water source point for verification and evaluation; according to the novel exploration method for the selenium-rich water resource, the sampling amount is effectively reduced, the cost is reduced, meanwhile, the efficiency is improved, and a potential selenium-rich mineral water source is rapidly positioned.

This invention discloses a method for preparing high-purity tellurium by chemical solidification-vacuum distillation to remove selenium impurities, belonging to the field of rare and dispersed metal purification technology. Under a protective atmosphere, crude tellurium is heated to 500-600℃ to melt, and a solidifying agent is added. The solidifying agent is selected from any elemental metal or alloy of copper, silver, and antimony, with a molar ratio of solidifying agent to selenium impurities of 1-4:1. The mixture is stirred to generate selenides. Under a vacuum degree ≤10Pa, the selenides are gradually heated to 500-600℃ and distilled for 80-150 minutes. After cooling to room temperature, the condensed tellurium vapor is collected, which is the target high-purity tellurium, achieving the separation of tellurium from high-melting-point selenides. This technical solution achieves efficient removal of selenium and low-loss purification of tellurium by converting selenium into a high-melting-point compound for solidification and enrichment, coupled with vacuum distillation technology. This is of great significance for the efficient and large-scale preparation of high-purity tellurium of grade 6N and above.

The invention discloses a method for vacuum reduction of tellurium-containing crude selenium refining slag and separation of Se and Te, which comprises the following steps: crushing the tellurium-containing crude selenium refining slag and roasting at controlled temperature to oxidize tellurium into high valence; the roasting slag and a reducing agent are mixed and heated in a vacuum reduction furnace, selenium is reduced into elemental selenium to be volatilized and separated, and meanwhile high-valence tellurium is reduced into tetravalent tellurium salt to be left in the furnace; the method is simple in process, high in separation efficiency, environment-friendly and suitable for recycling selenium and tellurium from the tellurium-containing crude selenium slag.

This invention provides the application of roses in the preparation of nano-selenium, relating to the field of functional materials technology. This application is the first to use roses to prepare nano-selenium, providing a new and excellent matrix and a novel method for preparing nano-selenium. The method used in this application produces more stable nano-selenium, with controllable size and morphology, while maintaining the material's bioactivity. Because roses themselves have strong antioxidant capabilities, the antioxidant capacity of the modified nano-selenium is also enhanced. Furthermore, this nano-selenium also inhibits the activity of plant pathogens, prevents plant diseases, and promotes plant growth, providing a new functional material for the field of plant protection.

The invention provides a selenium-germanium co-doped functional carbon material and a preparation method thereof, a far infrared physiotherapy patch and application, the carbon material comprises selenium element and germanium element, based on the total mass of the carbon material, the content of the selenium element is 0.02-0.08%; the content of the germanium element is 0.01 to 0.04 percent; in an X-ray photoelectron spectroscopy of the carbon material, after a C1s peak 284.8 + / -0.1 eV is used as an internal standard for calibration and a high-resolution spectrogram of a Se3d orbit is subjected to peak splitting and fitting, a characteristic peak related to selenium and germanium coexistence exists in a binding energy range of 54.0-54.5 eV, the characteristic peak does not exist in a carbon material which is independently doped with selenium or independently doped with germanium, and the characteristic peak does not exist in a carbon material which is independently doped with selenium or independently doped with germanium. The integral area of the characteristic peak accounts for 20-45% of the total peak area of Se3d.

The application provides a method and equipment for separating selenium and tellurium from high-tellurium crude selenium raw materials. The method can selectively form tellurium polysulfide from tellurium in the crude selenium by adding sulfur in an alkaline solution, so that the metallic tellurium is converted into ions and enters the solution, and the main metallic selenium remains in the slag, thereby preliminarily and effectively separating the selenium and the tellurium, achieving a separation coefficient of 90.67%, and reducing the content of tellurium in the crude selenium raw material from 0.30% to 0.028%. The application has the advantages of good selenium and tellurium separation effect, simple operation, short process, and strong raw material adaptability.

The present invention relates to a preparation method capable of improving thermoelectric properties of a tin(II) selenide-based material via combination of composition regulation and mesoscopically ordered regulation, belonging to the technical field of the preparation of high-performance thermoelectric materials. The molecular formula of the tin(II) selenide-based material of the present invention is Sn(1-x)Se(0.93-6x)(WCl6)x. Raw materials thereof comprise tin granules, selenium granules and tungsten hexachloride powder. The preparation method comprises: weighing raw materials in a glovebox according to the atomic mass ratio; using a double-layer quartz tube, vacuumizing same, and putting the raw materials into a muffle furnace to melt and react same; then milling an obtained ingot by using a mortar in the glovebox to obtain a composition-regulated Sn(1-x)Se(0.93-6x)(WCl6)x powder; then performing spark plasma sintering on the Sn(1-x)Se(0.93-6x)(WCl6)x powder by successively using graphite molds having different inner diameters, so as to induce and arrange the orientation of grain growth, so that the tin(II) selenide-based thermoelectric material can grow under mesoscopically ordered regulation, thereby improving electrical, thermal and mechanical properties. The tin(II) selenide-based thermoelectric material prepared via composition regulation and mesoscopically ordered regulation has effectively improved electrical, thermal and mechanical properties.

The invention provides a method for preparing a MoS2 (1-x) Se2x nanosheet array and a preparation method of the MoS2 (1-x) Se2x nanosheet array. The preparation method comprises the following steps: placing a raw material and a substrate in a closed environment, wherein the substrate is located above the raw material; wherein the raw materials are elemental sulfur, elemental selenium and molybdenum trioxide; applying a magnetic field in the closed environment, and placing the raw materials in the magnetic field; after the reaction lasts for a preset time, stopping loading the magnetic field; after cooling, the MoS2 (1-x) Se2x nanosheet array growing in situ can be obtained, and the MoS2 (1-x) Se2x nanosheet array is located on the surface of the substrate. Compared with the prior art, the method has the advantages that the used equipment is simpler, the reaction time is obviously shortened, and the preparation efficiency is high.

This invention provides a method for preparing selenium-doped gallium arsenide polycrystalline material. The method involves placing an arsenic-selenium mixture and elemental gallium at opposite ends of a quartz tube, sealing the tube under vacuum, and then placing it in a three-zone tube furnace. The arsenic-selenium mixture is placed in a low-temperature zone, while the elemental gallium is placed in a high-temperature zone. Heating causes the arsenic-selenium mixture to sublimate and be transported to the high-temperature zone to react with molten gallium. After gradient cooling, selenium-doped gallium arsenide polycrystalline material is obtained. This invention combines gallium arsenide synthesis and selenium doping into a single process, resulting in a simple and uniform doping process. The obtained crystal has a smooth and dense surface, a complete structure, and significantly improved photoelectric properties.

This invention discloses a method and equipment for preparing high-purity tellurium from 4N high-selenium distilled tellurium. The method uses 4N high-selenium distilled tellurium as raw material and proceeds through seven steps: raw material preparation, gas replacement, hydrogen distillation, directional solidification, purging and cooling, product unloading, and sampling and packaging to obtain 6N high-purity tellurium. This invention addresses the problem of high selenium (approximately 20 ppm) and high sodium (approximately 10 ppm) content in 4N high-selenium distilled tellurium. Utilizing the structural characteristics of a horizontal furnace, it integrates atmospheric distillation, hydrogen deselenization, and directional solidification into a single process by modifying the traditional condenser structure, demonstrating a novel approach. The condenser boat structure design, combined with the "secondary vaporization-condensation" process, achieves a "gas-gas" reaction effect, effectively expanding the contact area for the hydrogenation reaction compared to conventional "gas-liquid" reactions. This reduces both selenium and sodium impurities to <0.01 ppm, effectively improving the direct recovery rate of the high-purity tellurium preparation system from high-selenium tellurium raw materials. This invention offers advantages such as short production cycle, large single-furnace capacity, wide applicability, and high economic value.

The invention relates to the technical field of separation and recovery of selenium and tellurium, in particular to a method for separating and recovering selenium and tellurium from alloy smoke dust. The method comprises the following steps: firstly, mixing alloy smoke dust of a smelting furnace with a sulfuric acid solution to obtain a first-section leaching solution and a first-section leaching residue; mixing the first-stage leaching residues with a selective leaching agent, and controlling the oxidation potential to obtain a second-stage leaching solution and second-stage leaching residues; then mixing the second-stage leachate with a reduction precipitator to obtain crude selenium; and mixing the second-section leaching residues with an alkali solution to obtain a third-section leaching solution and third-section leaching residues, adding concentrated acid into the third-section leaching solution, controlling the pH value, and performing solid-liquid separation after hydrolysis to obtain tellurium dioxide. According to the method, the problems of low separation efficiency and high cost of low-grade and near-content selenium and tellurium smoke dust in a traditional process are solved in one-step leaching, the purity of crude selenium and tellurium dioxide is improved by controlling process conditions, and the method is short in process flow, high in selective separation efficiency, high in comprehensive resource recovery rate and outstanding in environmental protection property and economical efficiency.

The invention provides a preparation method of refined selenium, and belongs to the technical field of high-purity selenium production. The preparation method of the refined selenium provided by the invention comprises the following steps: adjusting the pH value of venturi circulating liquid to 5-5.5, sequentially carrying out precipitation reaction and solid-liquid separation, and collecting a liquid material; the venturi circulating liquid comprises selenium and tellurium; the liquid material comprises selenium and tellurium; mixing the liquid material with a sulfurous acid-containing solution under an acidic condition, and carrying out a reduction reaction to obtain crude selenium; distilling the crude selenium to obtain refined selenium; the purity of the refined selenium is not lower than 99.9%. The preparation method provided by the invention is short in process, simple to operate and low in cost, the prepared refined selenium can reach the 3N standard, and the problem that selenium and tellurium are difficult to effectively separate is solved.

This invention relates to the technical field of toner cartridges, and discloses an assembly device for toner cartridge tension springs, including a housing tension spring connecting unit and a dial tension spring connecting unit. The dial tension spring connecting unit includes a tension spring dial connecting mechanism, a toner cartridge pressing mechanism, a second product base, and a dial pushing mechanism. The housing tension spring connecting unit is connected to the second product base, on which a second toner cartridge is placed. The toner cartridge pressing mechanism pushes the top of the second toner cartridge, and the dial pushing mechanism passes through the toner cartridge pressing mechanism and pushes the dial of the second toner cartridge. The tension spring dial connecting mechanism pulls the tension spring to connect with the dial. This invention reduces the skill requirements of operators, improves the efficiency of tension spring assembly, and avoids accidental injury to assembly personnel.

The present application relates to non-ferrous smelting technical field, specifically to a kind of tellurium slag comprehensive recovery method, steps include: tellurium slag is broken, ball milling to 100 mesh below particle size, by sulfuric acid leaching, leaching solution recovers copper, leaching residue is oxidized by hydrochloric acid and leaching, leaching solution is purified and recovered selenium tellurium by impurity removal, leaching residue is recovered gold and silver by water washing and neutralization and oxygen gas inclined-blowing rotary converter.The tellurium slag comprehensive recovery method disclosed in the present application, copper and tellurium in tellurium slag are leached into liquid phase in two stages, lead, gold and silver are in slag phase, so that copper and tellurium are effectively separated from lead, gold and silver, and the leaching rate of copper and tellurium is more than 90%, gold and silver are enriched in slag phase, which can be matched with pressurized copper removal anode mud into oxygen gas inclined-blowing rotary converter.The tellurium slag comprehensive recovery method disclosed in the present application can effectively recover copper, tellurium, gold, silver and other metal elements in tellurium slag, has the advantages of high treatment efficiency, and is worth popularization and application.