94 results about "Selenium" patented technology

The invention relates to the technical field of printing equipment, and provides a container for storing powder and a selenium drum, the container comprises: a housing, which is internally provided with a developer storage cavity; the developing roller is arranged on the shell, can rotate around a first axis and is used for conveying the developing agent in the developing agent storage cavity to the outside of the shell; the power transmission assembly comprises a first power receiving part and a transmission part linked with the first power receiving part, the first power receiving part is provided with a joint part capable of receiving first power, and the first power comes from a rotating component with a photosensitive material surface; the stirring component comprises a connecting part which is connected with the shell and can move relative to the shell; the stirring part is arranged in the developer storage cavity; and the second power receiving part is positioned on the power transmission path of the transmission part. The problem that in the prior art, operation of a stirring frame easily affects stable rotation of other components can be solved, and the imaging process is smoother.

The invention discloses a method for cascade recovery of tellurium from a complex tellurium-containing material. The method comprises the steps of acid pickling, reduction neutralization, pyrogenic transformation, leaching and neutralization. According to the method, through cooperative treatment of a wet process and a pyrogenic process, the problem of slag phase wrapping is effectively solved, and tellurium with different valence states in a complex tellurium-containing material is converted into high-quality tellurium neutralization slag in a gradient mode. The selenium removal rate is not lower than 95%, the tellurium recovery rate reaches up to 90% or above, efficient separation of selenium and tellurium is achieved, and the produced tellurium dioxide neutralization slag can be used for further purification and refining.

The invention relates to a preparation method of a platinum-doped hollow gold nanorod with high photo-thermal stability. The invention belongs to the technical field of nano material preparation. The preparation method comprises the following steps: adding a tellurium precursor substance and a selenium precursor substance into a hydrazine hydrate-containing solution, continuously magnetically stirring, and diluting by using an aqueous solution of lauryl sodium sulfate after the reaction is completed, so as to obtain the tellurium-selenium nanorod; and dispersing the prepared tellurium-selenium nanorod in pure water, adding a gold precursor, a platinum precursor and a modifier at the same time, and then performing centrifugal separation to obtain the platinum-doped hollow gold nanorod. The thermal stability of the hollow gold nanorod is effectively improved through platinum doping, and when the platinum doping proportion is 10% or above, the light and heat stability of the hollow gold nanorod is obviously improved; the positive significance is realized on the full play of the effect of the material in photo-thermal therapy and related combined therapy application.

The invention discloses a method for recovering valuable metals from copper anode slime step by step, and belongs to the technical field of metallurgy and chemical industry. According to the method, through control over the oxidation-reduction potential, the oxidation-reduction potential is high in the leaching stage, and it is guaranteed that gold, selenium, tellurium and the like can be oxidized to enter a leaching solution; in the reduction stage, gold, selenium and tellurium products are reduced step by step according to the difference of gold, selenium and tellurium in reduction potentials; in the leaching stage, soluble chlorine salt is added while enough oxidation potential is guaranteed, enough chloride ions are provided for the solution, and therefore gold can enter the solution in the form of AuCl4-(tetrachloroauric acid); meanwhile, in the oxidation leaching stage, a small amount of silver enters the solution in the form of silver sulfate or silver complex, and under the condition that enough chloride ions are provided, silver is precipitated and retained in residues in the form of silver chloride, so that separation of gold and silver is achieved, and meanwhile dispersion of gold and silver in the leaching process is reduced. According to the method, valuable metal is efficiently separated and recycled.

The invention discloses a method for stepwise dissolution of copper, selenium and tellurium in copper anode slime and enrichment of precious metals, the method comprises the steps of ball milling and drying, pressure leaching, oxygen pressure conversion and alkaline leaching, in the pressure leaching process, the oxygen partial pressure in a sulfuric acid solution with the concentration of 10-30 g / L is controlled to be 0.05-0.2 MPa at the temperature of 100-120 DEG C, NaCl and HCl are added in the oxygen pressure conversion to improve the Se recovery rate, and the alkaline leaching is carried out at the temperature of 100-120 DEG C; na2S is added in alkaline leaching, so that the tellurium recovery rate is remarkably improved, and the copper-selenium-tellurium leaching efficiency is high.

The invention discloses a purification method of high-purity tellurium, and belongs to the technical field of non-ferrous metallurgy. The method sequentially comprises the steps of raw material ultrasonic mechanical activation, ultrasonic selective recrystallization, smelting reduction refining, vacuum rectification purification and tellurium ingot forming, and volatile impurities such as selenium and sulfur are effectively removed by oxidizing calcination of a crude tellurium raw material; then, primary separation of impurities is realized in a manner of combining alkaline dissolution and oxidation precipitation, and then repeated purification is performed through low-temperature crystallization, so that the purity of tellurium is remarkably improved; metal impurities are further removed through smelting reduction treatment under the inert atmosphere, and preliminarily purified tellurium ingots are formed; step distillation separation is carried out by utilizing vapor pressure difference between tellurium and impurities under a high vacuum condition, and a pure tellurium component is enriched; and finally, melting in an inert atmosphere, cooling and forming to obtain the high-purity tellurium ingot. The method is stable in technological process, suitable for industrial application and capable of meeting the requirements of high-end fields such as semiconductors and photoelectric materials for high-purity tellurium materials.

The application provides a method for separating selenium tellurium from high-selenium tellurium dioxide through multistage conversion, and belongs to the technical field of non-ferrous metallurgy. The method comprises the following steps: a, material preparation; b, primary conversion leaching: selectively reducing selenium in a solution containing a reducing agent at pH 8-11 to obtain a selenium tellurium-containing residue and a primary leaching solution; c, secondary conversion leaching: selectively leaching tellurium in a strong alkaline solution containing a reducing agent to obtain elemental selenium and a secondary leaching solution; and d, neutralization treatment: combining the two leaching solutions and adding acid to obtain high-purity tellurium dioxide. The method is simple to operate, short in production cycle, and realizes efficient separation of selenium tellurium. The purity of the obtained elemental selenium is greater than or equal to 95%, the purity of the obtained tellurium dioxide meets the requirements of electrodeposition for producing 4N tellurium, and the method is suitable for large-scale production.

The application discloses a comprehensive treatment method of platinum-palladium slag and relates to the technical field of nonferrous metal smelting. After sulfuric acid roasting of the platinum-palladium slag, flue gas is introduced into a selenium absorption tower; the roasted slag is hydrolyzed, and tellurium is recovered by reduction of a dissolved solution; after the tellurium is precipitated, the dissolved solution is introduced into a copper recovery procedure; gold is recovered by chlorination and dissolution in the dissolved slag, and the gold-recovered slag is introduced into silver recovery; gold powder is obtained by reduction of the gold-recovered solution; platinum and palladium are precipitated from the gold-reduced solution; ammonia is added to the platinum and palladium precipitate to separate platinum and palladium; the separated platinum and palladium is refined to recover platinum and palladium; platinum and palladium are reduced from the platinum and palladium precipitated solution to obtain platinum and palladium precipitate and platinum and palladium reduced solution, and the platinum and palladium precipitate is returned to the roasting procedure; tellurium is reduced from the platinum and palladium reduced solution to obtain tellurium powder and tellurium reduced solution, and the tellurium reduced solution is introduced into a wastewater treatment procedure. The application has the beneficial effects that selenium and tellurium, copper, gold, silver, platinum and palladium are stepwise separated and recovered, the recovery rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The application discloses a tellurium-selenium-zinc plane target material and a preparation method thereof, and belongs to the technical field of target material processing. The method is characterized in that zinc selenide powder is used to dope zinc telluride powder to prepare a tellurium-zinc-selenium target material, so that the target material can be regulated to a normal temperature band gap of 2.15-2.82 eV, and the material has higher light transmittance than zinc telluride. On the other hand, in order to guarantee the uniformity, compactness and mechanical strength of the target material, the preparation method adopts a double-stage heating and pressurizing method to heat and prepare the powder, so that the prepared tellurium-zinc-selenium plane target material has a relative density of more than 96%, high bending strength and good uniformity.

A method for producing a quantum dot that includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

The present invention discloses a MXene two-dimensional material and a preparation method and application thereof, wherein the chemical formula of the MXene two-dimensional material is expressed as M n+1 (X a Y 1‑a ) n , where M is selected from a transition metal element, X is selected from one or more of carbon, nitrogen, and boron, and Y is selected from one or more of phosphorus, oxygen, sulfur, selenium, or tellurium; 0<a<1, and n is between 1 and 4. The preparation method of this two-dimensional MXene material comprises reacting a MXene material containing a halogen element functional group with a single element, hydride, or metal salt of phosphorus, oxygen, sulfur, selenium, or tellurium. This invention produces a novel MXene material that achieves the doping of non-metallic elements at the X position, providing a new approach to multi-element manipulation of MXene materials.

The application relates to an ultrasonic treatment method of high-impurity copper anode slime. The ultrasonic treatment method is realized through hierarchical ultrasonic strengthening and synergistic leaching. In the first-stage leaching, hydrogen peroxide-oxygen-rich air composite oxidants are combined with ultrasonic cavitation effects to realize efficient oxidation leaching of arsenic, antimony and bismuth; in the second-stage leaching, sulfuric acid-sodium sulfite mixed leaching agents are used to remove harmful impurities such as arsenic, antimony and bismuth under ultrasonic strengthening, and to efficiently enrich valuable metals such as gold, silver, selenium and tellurium, so that the treatment period is shortened, energy consumption and reagent consumption are reduced, resource comprehensive utilization is improved, and the method is suitable for efficient separation and resource recovery of high-impurity copper anode slime containing refractory impurities such as arsenic, antimony and bismuth and valuable metals such as gold, silver, selenium and tellurium.

This invention relates to a method for preparing high-density one-dimensional selenium-doped copper telluride chains, belonging to the field of nanomaterials technology. The method involves preparing a copper single-crystal substrate; evaporating and depositing tellurium powder onto the copper single-crystal substrate to obtain the substrate and a copper tellurium compound deposited on the substrate, controlling the temperature of the copper tellurium compound and the copper single-crystal substrate at 25–30°C during the deposition process; subjecting the substrate and the deposited copper tellurium compound to a first heating and holding treatment at the growth temperature; then evaporating and depositing selenium powder onto the substrate and the copper tellurium deposit to obtain a selenium-doped copper telluride deposit and the substrate, controlling the temperature of the substrate and the deposit at 25–30°C during the deposition process; and subjecting the obtained selenium-doped copper telluride deposit and the substrate to a second heating and holding treatment at the growth temperature to obtain high-density one-dimensional selenium-doped copper telluride chains. The one-dimensional selenium-doped copper telluride chains prepared by this invention have a width of less than 1 nanometer, a length of more than 50 nanometers, and all chains are uniformly oriented.

A method of forming a bismuth chalcogenide film is disclosed including the steps of (a) forming at least one bismuth (Bi) elemental layer on a substrate, (b) forming at least one selenium (Se) or tellurium (Te) elemental layer on the substrate, and (c) after steps (a) and (b), heating the substrate to form a bismuth chalcogenide film.

The application provides a method for estimating the temperature of the formation of a granite type uranium deposit based on the content of arsenic and selenium in pyrite, which comprises the following steps: firstly, collecting ore samples of the uranium deposit through field geological investigation; then, observing the ore samples under a microscope and analyzing the elements in the laboratory after processing the ore samples; and finally, processing the laboratory data and comprehensively estimating the temperature of the formation of the uranium deposit. The application has reasonable design and simple process, and is simple to operate and has low technical difficulty in estimating the temperature of the formation of the granite type uranium deposit, which is of great significance for deeply understanding the cause of the uranium deposit and predicting the prospect of the formation of the uranium deposit in the deep part.

This invention discloses a method for the tiered extraction of copper anode slime from co-smelting copper anodes, belonging to the fields of resource comprehensive utilization and non-ferrous metal metallurgy. The method is used to treat copper anode slime produced after co-smelting waste circuit board pyrolysis residue and copper sulfide ore, followed by blowing and electrolytic refining. The method includes: sulfidation leaching of the copper anode slime to preferentially allow tellurium to enter the leachate; reduction precipitation of the tellurium-containing leachate to recover tellurium products; atmospheric pressure mixed acid leaching of the sulfidation leaching residue to preferentially allow copper and selenium to enter the leachate, yielding a copper-selenium-containing leachate and a precious metal-enriched slag; chlorination leaching of the precious metal-enriched slag to allow gold to enter the chlorinated leachate and separate from silver; and SO2 reduction precipitation and extraction separation of the copper-selenium-containing leachate to sequentially recover selenium and copper. This method can achieve tiered separation and efficient recovery of Te, Se, Au, Ag, and Cu from novel copper anode slime produced by co-smelting, and has the advantages of a clear process, good selectivity, and suitability for closed-loop operation.

The invention discloses a selenium-modified nickel-vanadium layered double hydroxide electrode material for a supercapacitor and preparation and application thereof, and belongs to the technical field of supercapacitors. The material initiates an'intercalation pre-modification-selenylation cooperation 'structure regulation strategy, and is realized through a two-step hydrothermal method: firstly, in-situ intercalation of graphene quantum dots is carried out in a NiV-LDHs hydrothermal growth stage to serve as an interlayer support and an initial conductive network, hexamethylenetetramine is used for assisting formation of a layered precursor, a double-reducing-agent system is used for synergistic in-situ selenylation, and the graphene quantum dot / NiV-LDHs composite material is obtained. Se < 4 + > is adsorbed and anchored by using pi-pi of the GQDs, so that double-site uniform distribution of selenium on the surface of the laminate and the interface of the GQDs is realized. According to the method, the limitation of a traditional step-by-step process is broken through, the integrity of a layered structure, the continuity of a conductive network and the uniformity of selenium modification are synergistically guaranteed, the interlayer spacing of the obtained material is increased to 1.22 nm, active sites are fully exposed, and the material has high specific capacitance and high rate performance and is suitable for a high-performance supercapacitor electrode.

The application belongs to the field of nanometer materials, and specifically discloses an ultrathin platinum-based hollow nanorod with a wall thickness less than 4 nm, a preparation method and application thereof. The preparation method comprises the following steps: adding tellurium and selenium precursors into a solution containing a reducing agent and continuously stirring by magnetic force, then performing solid-liquid separation to obtain tellurium-selenium nanorods; obtaining a structure of a platinum alloy coated tellurium-selenium template, then adding hydrogen peroxide solution into an aqueous solution containing an intermediate product and reacting for a preset time, performing solid-liquid separation to obtain a precipitate after the reaction is completed, and finally obtaining the ultrathin platinum alloy hollow nanorod. If no other noble metal precursor is added when the platinum precursor is added, the ultrathin platinum hollow nanorod can be obtained. The application mainly controls the reaction rate of the noble metal precursor and the tellurium-selenium template by using ethylene glycol and polyvinylpyrrolidone, and removes the unreacted tellurium-selenium template by using hydrogen peroxide etching, so that the prepared ultrathin platinum-based hollow nanorod has a wall thickness less than 4 nm.

This invention relates to the field of crystal material preparation technology, specifically to a ternary layered selenide Ge 0.85 Bi 2.15+x Se4 semiconductor material and its preparation method. The preparation method includes the following steps: according to the chemical formula Ge... 0.85 Bi 2.15+x The molar ratio of germanium powder, bismuth powder, and selenium powder in Se4 is weighed, where 0 ≤ x ≤ 0.06. The weighed raw materials are mixed evenly and placed in a quartz tube. The quartz tube is then sealed under vacuum. The vacuum-sealed quartz tube is placed in a heating furnace and heated from room temperature to 900-950℃, held at this temperature for 12-24 hours. After the holding period, the quartz tube is removed from the heating furnace and quenched. The quenched and cooled quartz tube is then placed back in the heating furnace and heated from room temperature to 540-560℃, held at this temperature for 3-5 days for annealing, thus obtaining the ternary layered selenide Ge. 0.85 Bi 2.15+x Se4 semiconductor material. This invention successfully solves the technical problem of obtaining a single phase in the GeBi2Se4 system by precisely controlling the Ge / Bi ratio and employing high-temperature quenching and low-temperature long-time annealing processes.

The application discloses a high-heat-resistance tellurium-copper alloy strip and a preparation process thereof, and relates to the technical field of tellurium-copper alloys. Step 1: electrolytic copper, pure tellurium, pure selenium and copper-cerium intermediate alloy are mixed, smelted and semi-continuously cast to obtain a base casting; step 2: the base casting is sequentially subjected to homogenization annealing, hot rolling, solid solution annealing, aging treatment, two-rolling and stress relief annealing to obtain the high-heat-resistance tellurium-copper alloy strip. The high-heat-resistance tellurium-copper alloy strip comprises the following components: 0.1wt%-0.5wt% of tellurium, 0.01wt%-0.03wt% of cerium, 0.05wt%-0.15wt% of selenium, impurity content <0.3wt% and the rest of copper. In the application, the mechanical properties and high-temperature stability are synergistically improved by regulating and controlling selenium and cerium; and the high-temperature resistance is further improved on the basis of ensuring the electric conductivity through a surface laser cladding enhancement layer, thereby providing reliable guarantee for the application of the alloy strip in a high-temperature complex environment.

The application provides a method for preparing normal aldehyde by one-step method, in which a raw material non-conjugated allyl alcohol is contacted with a catalyst under the condition of 0-2.0 bar in a hydrogen atmosphere containing carbon monoxide, and a normal aldehyde is generated by reaction; wherein the catalyst is a supported catalyst, including an active component main metal and an active assistant; the active component main metal includes at least one of rhodium, ruthenium and platinum elements, and the active assistant includes at least one of sulfur, selenium, tellurium, phosphorus, arsenic, antimony, bismuth, tin, cadmium, cerium and praseodymium elements. By controlling the synergistic effect of the reaction condition and the catalyst component, the double bond migration and saturated hydrogenation in the raw material are jointly regulated, the raw material conversion rate and the selectivity of the normal aldehyde are improved, and the generation of by-products is significantly reduced. The process flow of the application is simple and efficient, and is beneficial to large-scale production and application.

The invention provides a green ZnSe / ZnSeTe core-shell quantum dot, a preparation method thereof and an electroluminescent device.The preparation method comprises the steps that S1, a ZnSe inner core is prepared, specifically, a selenium precursor and a zinc precursor are added into a reaction system, and the ZnSe inner core is generated through a reaction; s2, preparing a green-light ZnSe / ZnSeTe core body: adding an activity improving agent, a selenium precursor, a tellurium precursor and a zinc precursor into S1, and reacting to generate a ZnSeTe outer core coating the ZnSe inner core so as to form the green-light ZnSe / ZnSeTe core body; the green light ZnSe / ZnSeTe core body is passivated; s3, preparing a transition layer: adding a zinc precursor, a magnesium precursor and a selenium precursor into S2, and reacting to generate a ZnMgSe transition layer coating the green ZnSe / ZnSeTe nuclear body; and S4, preparing a shell layer: adding a zinc precursor and a sulfur precursor into S3, and reacting to generate a ZnS shell layer coating the ZnMgSe transition layer.

Provided are: an n-type thermoelectric material which has a dimensionless performance index (ZT) of more than 1.3 at at least 723 K; a method for producing same; and a thermoelectric power generation element.　An n-type thermoelectric material according to the present invention includes an inorganic compound that contains: magnesium (Mg); antimony (Sb) and / or bismuth (Bi); indium (In); and an element M (the element M is at least one element selected from the group consisting of selenium (Se) and tellurium (Te)), and is represented by the formula MgaSb2-b-cBibMcInd, wherein the parameters a, b, c and d respectively satisfy the relationships 3≤a≤3.5, 0≤b≤2, 0<c<0.04, 0<d≤0.15 and b+c≤2.

The invention discloses a device for detecting selenium in silt dam soil, comprising a soil drilling component, a driving component is provided at the upper end of the soil drilling component, an auxiliary component is provided on one side of the driving component, and a processing component is provided on the other side of the driving component. The soil drilling component comprises a drill barrel, the upper and lower ends of the drill barrel are both provided with connecting grooves, rotating shafts are provided on both sides of the bottom end of the drill barrel, the rotating shafts are movably sleeved with connecting rods, the bottom end of the connecting rods is fixedly connected with a drill bit, a cavity is provided inside the drill bit, a lower sleeve is movably sleeved in the cavity of the drill bit, and a uniformly distributed lower return spring is fixedly connected between the lower sleeve and the bottom end of the cavity of the drill bit, a lower micro air pump is provided outside the cavity of the drill bit, a drill tooth is provided at the bottom end of the drill bit, and support plates are provided on both sides of the drill bit. The device for detecting selenium in silt dam soil combines the drilling soil sampling and soil processing processes to make the working process more coherent. The device can cut the soil sample at both ends to improve the quality of the soil sample.

The invention provides a method for comprehensively recovering selenium, tellurium, mercury, silver and lead from lead smelting acid mud, and belongs to the technical field of hazardous solid waste harmlessness and comprehensive resource recovery, and the method comprises the following steps: mixing the lead smelting acid mud, an activating agent and water, ball-milling and activating to obtain activated acid mud; carrying out low-acid oxidation leaching on the activated acid mud to obtain low-acid leaching liquid and low-acid leaching residues; carrying out high-acid oxidation leaching on the low-acid leaching residues to obtain high-acid leaching liquid; bismuth powder is added into the low-acid leaching liquid for tellurium enrichment reaction, and tellurium concentrate and tellurium enriched liquid are obtained; adding chlorine salt into the tellurium-enriched liquid, and reacting under a certain pH value to obtain bismuth oxychloride and bismuth-removed liquid; carrying out mercury enrichment on the bismuth removal liquid to obtain mercury-rich slag and mercury removal liquid; and adding a reducing agent into the mercury removal liquid to react to obtain crude selenium and reduced liquid. The method for comprehensively recovering selenium, tellurium, mercury, silver and lead from lead smelting acid mud provided by the invention is economical, efficient and environment-friendly, and can solve the problems that the acid mud containing elements such as selenium, tellurium, mercury, silver and lead is stockpiled, all valuable elements cannot be recovered, and the like.

The application discloses a preparation method, a preparation system, a product and application of a selenium-tellurium vanadium material, and belongs to the technical field of material preparation. The application provides a method for preparing a large-area single-layer selenium-tellurium vanadium ternary topological composite material, which comprises the following steps: S1, depositing vanadium oxide on a substrate to obtain a vanadium oxide film; S2, reacting the vanadium oxide film obtained in the step S1 with a selenium source and a tellurium source in an environment containing inert gas and hydrogen, and naturally cooling to obtain a selenium-tellurium vanadium material. The selenium-tellurium vanadium material prepared by the method has the advantages of lower resistivity and higher conductivity, and exhibits unique advantages in the next generation of electronic, energy and quantum devices, so that large-area device manufacturing with high performance and low power consumption can be realized.

The invention belongs to the technical field of scattered metal separation, and particularly relates to a method for separating and recovering selenium and tellurium from a selenium-tellurium alloy. The invention provides a method for separating and recovering selenium and tellurium from selenium-tellurium alloy, which comprises the following steps: oxidizing and roasting the selenium-tellurium alloy to obtain tellurium dioxide solid and SeO2 flue gas; mixing the tellurium dioxide solid with a reducing agent, and performing vacuum reduction to obtain tellurium; the reducing agent is a mixture of tea leaf residues and potassium sulfate; and mixing the SeO2 flue gas with water, and carrying out electrodeposition to obtain selenium. The method provided by the invention overcomes the bottlenecks of long traditional selenium-tellurium separation process, complex process and the like, and realizes efficient separation and recovery of the industrial-grade selenium-tellurium alloy. And the tea residue is used as a reducing agent, so that waste utilization is realized, the cost is saved, and the method is more environment-friendly.

A highly efficient method for removing oxygen, sulfur, and selenium from tellurium for purification includes the following steps: charging; controlling the reducing atmosphere; volatilization; distillation; and ingot casting. This method can directly obtain 4N tellurium product through a single vacuum distillation. The product has low levels of single-point-digestible impurities such as selenium, sulfur, and oxygen, providing high-quality raw materials with low levels of oxygen-containing impurities for subsequent preparation of 5N and higher purity tellurium. By controlling the vacuum degree and H2 content during the vacuum distillation process, this method efficiently removes impurities such as selenium, sulfur, and oxygen while improving tellurium recovery.