An
assembly consisting of three dimensional stacked SOI chips, and a method of forming such
integrated circuit assembly, each of the SOI chips including a handler making mechanical contact to a first metallization pattern making electrical contact to a
semiconductor device. The metalized pattern, in turn, contacts a second metallization pattern positioned on an opposite surface of the
semiconductor device. The method of fabricating the three-dimensional IC
assembly includes the steps of: a) providing a substrate having a third metalized pattern on a first surface of the substrate; b) aligning one of the SOI chips on the first surface of the substrate, by having the second metallization pattern of the SOI
chip make electrical contact with the third metalized pattern of the substrate; c) removing the handler from the SOI
chip, exposing the first metallization pattern of the SOI
chip; d) aligning a second one of the SOI chips with the first SOI chip, having the second metallization pattern of the second SOI chip make electrical contact to the exposed first metallization pattern of the first SOI chip; and e) repeating steps c) and d) for mounting subsequent SOI chips one on top of the other.