66 results about "Electron mobility" patented technology

The present disclosure provides an array substrate and a display device. The array substrate includes a substrate layer and a gate drive circuit disposed at a peripheral region of the substrate layer. The gate drive circuit includes a plurality of cascaded shift registers. The shift register includes an input circuit, an output circuit, a pull-down node control circuit, and a noise reduction circuit. At least one transistor included in the input circuit, the output circuit, and the noise reduction circuit is a first type of transistor. The pull-down node control circuit includes a plurality of transistors connected between a first voltage terminal and a first reset voltage terminal, and at least one transistor of the plurality of transistors is a second type of transistor. The first type of transistor includes a first active layer, and the second type of transistor includes a second active layer. An electron mobility of the second active layer is less than an electron mobility of the first active layer.

This application provides a flexible transparent semiconductor display thin film material and its preparation method. The material forms a multi-level stacked transparent semiconductor functional layer on a flexible transparent polymer substrate, consisting of alternating high-mobility sublayers and high-stability sublayers with an adjustable thickness ratio, balancing electron mobility and stability. Interface nano-modification layers are respectively set between the semiconductor functional layer, the conductive layer, and the substrate to improve interface adhesion and electronic conductivity. The transparent conductive layer adopts a multi-layer composite structure, including a transparent conductive sublayer and a metal nanolayer, improving conductivity and lifespan. Through structural optimization and interface engineering, this application significantly improves the electronic properties, environmental stability, and flexibility of the flexible thin film while maintaining high transparency, solving the problem of balancing high mobility and high stability in existing technologies. It is applicable to flexible displays, touch screens, and transparent optoelectronic devices.

The application belongs to the technical field of OLED, and specifically comprises an organic compound for a double light-emitting layer blue light device and application thereof.The structural general formula of the organic compound is shown in the following.The application can fully exert the double light-emitting layer mechanism by directly connecting a benzofuranphenanthrol group at the 7th position of a benzanthracene nucleus, improve the device efficiency, and further, when the benzanthracene nucleus directly connected position is a phenanthrene group fragment on the benzofuranphenanthrol group, the electron mobility can be further enhanced, so that the prepared device obtains lower voltage and higher efficiency.In summary, the application improves the voltage and efficiency of the double light-emitting layer device through special design of the substituent and substitution site on the benzanthracene nucleus.I

The application discloses a tetracyanoanthracene derivative with a double-end substitution structure and a preparation method and application thereof, and a structural general formula of the tetracyanoanthracene derivative is as follows: wherein R is selected from -F, -NO2, -CN or C n H 2n+1 (n is an integer between 0 and 20) one of them. The application introduces an aromatic ethylene bridging unit with conjugate expansion capacity on both sides of the tetracyanoanthracene core structure, and introduces a substitution group with adjustable structure at the end of the aromatic ring, which not only enhances the conjugation and pi-pi stacking ability of the molecule, is conducive to the ordered transmission of carriers in the solid-state thin film, but also helps to improve the crystallinity, surface flatness and air stability of the thin film, and improves the overall performance and environmental adaptability of the device. The tetracyanoanthracene derivative material with the double-end substitution structure provided in the application exhibits higher electron mobility, lower opening voltage and more excellent air operation stability in the OFET device.

The application provides a compound containing a fluorene group and an organic electroluminescent device thereof. The compound of the application contains at least one or more deuterium atoms in the structure, has higher electron mobility, and can effectively enhance the electron transport capacity of the organic electroluminescent device. The compound of the application can be applied to a light-emitting layer and an electron transport region, can effectively reduce the driving voltage of the organic electroluminescent device, improve the light-emitting efficiency, and can significantly increase the service life of the device, thereby enhancing the durability of the device. It can be widely applied to the field of information display technology, such as mobile phones, tablet computers, televisions, wearable devices, VR, vehicle displays and tail lights, etc.

This invention proposes a semiconductor laser device with a spin-polarized sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention establishes a multi-layered spin-polarized sublayer structure between the upper confinement layer and the upper waveguide layer in the semiconductor laser device, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, controlling the piezoelectric polarization effect of the active layer, suppressing the quantum confinement Stark effect, reducing the band tilt of the active layer, reducing the hole injection band order, increasing the overlap probability of electron-hole wave functions, and improving the internal quantum efficiency.

The utility model relates to a semiconductor technical field provides a kind of high electron mobility transistor, comprising: substrate, multiple composite function layers, gate and drain, multiple composite function layers are stacked with substrate, and multiple composite function layers are sequentially stacked, each composite function layer includes stacked channel layer and barrier layer, channel layer is adjacent to the setting of substrate;Gate is stacked with composite function layer;Drain is stacked with composite function layer;Isolation region is located in the composite function layer of non bottommost, and isolation region is located between gate and drain.The high electron mobility transistor described above, by stacking multiple composite function layers, the mobility of channel electron is increased, the resistance of high electron mobility transistor is reduced;By setting isolation region in the composite function layer of topmost layer, the electric field distribution of drift region is optimized, the withstand voltage capability of high electron mobility transistor is improved, and local breakdown of high electron mobility transistor is avoided.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The application discloses a kind of high mechanical strength crystalline silicon cell and preparation method thereof, belong to crystalline silicon cell technical field, the application is gradually discharged by hot isostatic pressing process, inter-particle attractive force is dominant in high-pressure and high-temperature environment, the microstructure of monocrystalline silicon wafer is changed by physical method, the defects of monocrystalline silicon wafer are solved, not only improve mechanical strength, fatigue life and electron mobility, improve the surface area of monocrystalline silicon wafer after texturing.

The application belongs to the technical field of OLED and specifically comprises an organic compound for a blue light device and a blue light organic electroluminescent device. The structural general formula of the organic compound is shown in the following. The application directly connects a benzofuranphenanthrol group to the 12th position of a benzanthracene nucleus, which can utilize the oxygen atom on the furan to increase the polarity and intermolecular interaction of the molecule, improve the molecular orientation when the material is stacked, thereby strengthen the permanent spontaneous orientation polarization effect, and obtain a better voltage improvement effect; on the other hand, the direct connection of the phenanthrene ring on the benzofuranphenanthrol group to the 12th position of the benzanthracene can improve the electron mobility of the material, thereby improving the electron density in the light-emitting layer, and with the increase of the electron density, the carrier recombination probability can be significantly improved, thereby reducing the accumulation of holes in the light-emitting layer, reducing the exciton quenching condition, and improving the device efficiency.I

This application discloses a gallium nitride high electron mobility transistor and its fabrication method. The gallium nitride high electron mobility transistor includes: a substrate; a channel layer and a barrier layer sequentially disposed along a direction away from the substrate; a gate electrode disposed on the side of the barrier layer away from the substrate; an etch stop layer covering the gate electrode and the barrier layer; a passivation layer covering the etch stop layer, wherein the etch rate of the etch stop layer is less than the etch rate of the passivation layer; two first electrode vias disposed on opposite sides of the gate electrode in a first direction, each first electrode via penetrating the passivation layer, and the bottom of each first electrode via extending at least into the barrier layer; the first direction being parallel to the substrate; two first conductive structures correspondingly filling the two first electrode vias; and a first wiring layer disposed on the surface of the passivation layer away from the substrate, covering each first electrode via, and connected to the first conductive structures.

The application relates to a gallium nitride epitaxial wafer and a gallium nitride high electron mobility transistor using the same. The gallium nitride epitaxial wafer comprises a buffer layer, the buffer layer comprising a sacrifice layer, a barrier layer, an alternating period layer and a high resistance layer; the sacrifice layer is formed by doping carbon and magnesium in GaN; the barrier layer is formed by doping carbon, magnesium and indium in AlN; the alternating period layer comprises a first stress release layer and a second stress release layer which are alternately grown, the first stress release layer is formed by doping carbon, magnesium and indium in AlGaN, and the second stress release layer is formed by doping carbon, magnesium and indium in AlN; the high resistance layer comprises a doped layer and an undoped layer which are alternately grown, the doped layer is formed by doping carbon in GaN, and the undoped layer is formed by GaN. The gallium nitride high electron mobility transistor comprises an epitaxial layer prepared from the gallium nitride epitaxial wafer. The application can reduce the crystal defect density, improve the electrical performance, stability and reliability, and realize the compatibility with the laser lift-off process.

The application discloses a material structure for improving GaN heterojunction electron mobility and an epitaxial growth method thereof. The structure comprises, from bottom to top, a single crystal substrate, an AlN nucleation layer, a GaN buffer layer, an AlN insertion layer, a GaN isolation layer, a lower AlGaN barrier layer, an upper AlGaN barrier layer and an InGaN cap layer. The epitaxial growth method is characterized in that: the GaN isolation layer is introduced to suppress alloy disorder scattering; the lower barrier layer is grown by using a high V / III ratio low-speed process to reduce defects, and the upper barrier layer is grown by using a low V / III ratio high-speed process to improve the interface morphology; and finally, the InGaN cap layer is grown to relieve stress and reduce surface states. The application can synergistically suppress multiple scattering mechanisms, and the room temperature electron mobility is improved to 2270 cm 2 / V·s or above, and the surface roughness is significantly reduced, thereby providing a key material basis for high-performance GaN microwave devices.

The application belongs to the technical field of OLED and specifically comprises an organic composition for an organic electroluminescent device and an organic electroluminescent device comprising the same. The organic composition comprises a first compound as a first hole transport layer material, a second compound as a second hole transport layer material and a third compound as an electron transport layer material; wherein the general structural formula of the first compound is shown as formula I, the general structural formula of the second compound is shown as formula II, and the general structural formula of the third compound is shown as formula III. The layer formed by the first compound and the layer formed by the second compound jointly constitute a hole transport region, which can match the hole mobility of the whole hole transport region with the electron mobility of the electron transport layer formed by the third compound, so that the transmission of holes and electrons to the light-emitting layer is more balanced, the carrier recombination probability of the light-emitting layer is improved, the device efficiency is improved, and the device voltage is reduced.I;II;III.

An integrated circuit comprising: a III-nitride high-electron-mobility transistor (HEMT) comprising a source terminal, a gate terminal, and a drain terminal; a hotspot detection circuit comprising a temperature sensor, the temperature sensor being configured to sense a localized temperature of the III-nitride HEMT; and a protection circuit; wherein the hotspot detection circuit is configured, upon sensing by the temperature sensor of an increase in the localized temperature of the III-nitride HEMT, to transmit a hotspot detection signal to the protection circuit; and wherein the protection circuit is configured, upon receipt of the hotspot detection signal, to cause a current between the source terminal and the drain terminal to be reduced.

The application discloses a preparation method and product of 1-octene-3-ol gas-sensitive material and application thereof, and improves the response of ternary metal oxide to 1-octene-3-ol through rare earth element doping. The preparation method comprises the following steps: taking a mixed solution of isopropyl alcohol and glycerol as a solvent, taking cadmium nitrate tetrahydrate and hydrated indium nitrate as cadmium sources and indium sources, and taking appropriate nitrate erbia hexahydrate to realize rare earth element Er doping; after water bath assisted dissolution, the mixed solution is transferred into a stainless steel high-pressure reaction kettle for sealing reaction; after the reaction is completed, the precursor material is obtained through washing and drying, and the gas-sensitive material is obtained through calcination. The gas-sensitive material prepared by the application has good response sensitivity to 1-octene-3-ol, and the electron mobility is further improved through rare earth element doping, so that the detection accuracy of the material under low VOC concentration is improved. The preparation method is simple and practical, and can be used for monitoring the aging phenomenon in the storage process of rice, so as to provide protection for food safety and fair trade of grain.

This invention discloses a triarylamine crosslinked molecule with a halostyrene side chain, its preparation method, and its applications, belonging to the field of optoelectronic materials technology. This triarylamine crosslinked molecule with a halostyrene side chain exhibits good structural symmetry and good orbital separation characteristics, effectively suppressing nonradiative recombination of electrons and holes during carrier transport, which is beneficial to improving the carrier separation and transport efficiency of the device. When applied to the fabrication of perovskite solar cells, it improves the photoelectric performance of the device. Single-electron and single-hole device tests show that after adding this crosslinked molecule, the trap filling threshold voltage is significantly reduced, the trap density decreases, and the electron mobility and hole mobility increase. This crosslinked molecule can effectively passivate perovskite defects and improve carrier transport capability, making it suitable for high-efficiency and stable perovskite solar cells.

The application discloses a double-gate structure gallium nitride high electron mobility transistor and a manufacturing method thereof. The double-gate structure gallium nitride high electron mobility transistor comprises a heterostructure and a source electrode, a drain electrode, a main gate electrode and a secondary gate electrode; the heterostructure comprises a channel layer and a barrier layer formed on the channel layer, and a two-dimensional electron gas is formed between the channel layer and the barrier layer; the main gate electrode and the secondary gate electrode are arranged in a main gate electrode region and a secondary gate electrode region of the barrier layer respectively, the secondary gate electrode region of the barrier layer has a groove structure, a part of the secondary gate electrode is arranged in the groove structure, and the secondary gate electrode forms a Schottky diode with the two-dimensional electron gas. The double-gate structure gallium nitride high electron mobility transistor provided in the embodiment of the application realizes the improvement of the third quadrant conduction capability and the reliability of the gate electrode, and improves the high reliability and high energy efficiency working capability of the device.

A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buffer layer and a barrier layer over the channel layer. A gate contact is disposed on a surface of the epitaxial layers. A source contact and a drain contact are also disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.

Embodiments of the present invention provide a High Electron Mobility Transistor (HEMT) comprising: a first drain terminal; a gate terminal; a second drain terminal; a channel layer, part of which forms a first element together with the first drain terminal and the gate terminal, and part of which forms a second element together with the second drain terminal and the gate terminal; a first barrier layer that forms a first two-dimensional electron gas (2DEG) region at the interface with the channel layer within the first element; and a second barrier layer that forms a second two-dimensional electron gas region at the interface with the channel layer within the second element, wherein the physical properties of the first barrier layer and the second barrier layer are different from those of the first barrier layer.

This invention provides an ultra-wideband Doherty power amplifier system and control method, comprising a control layer, a physical layer, and an optimization layer. The physical layer employs three parallel gallium nitride high electron mobility transistors, combined with a broadband collaborative synthesis network of a multilayer PCB planar transformer synthesizer with a leakage inductance resonant parasitic absorption mechanism, to achieve bandwidth expansion. The optimization layer introduces an improved MOEA / D algorithm with group delay flatness constraints. The control layer uses an FPGA-embedded model to assist in iterative learning and control of the ILC unit. This invention effectively solves the nonlinear divergence problem caused by strong physical-control coupling in a three-channel amplifier module architecture within the ultra-wideband range, simultaneously achieving high back-off efficiency and fast, stable convergence of the digital predistortion algorithm in the 0.6–4.9 GHz frequency band.

The application discloses a trench type NMOS device, a preparation method and application of a MOS device. The preparation method of the trench type NMOS device comprises the following steps: S11, forming a first trench on a substrate; S12, sequentially forming a buffer layer and an N channel layer of the NMOS device in the first trench, the electron mobility of the N channel layer is greater than that of the substrate, and the lattice constants of the substrate, the buffer layer and the N channel layer are sequentially increased; and S13, preparing a gate, a source and a drain of the NMOS device. The trench type NMOS device is mainly designed and optimized for the channel of a MOSFET chip. The lattice mismatch and thermal expansion of the substrate and the channel layer can be relieved through the arrangement of the buffer layer, meanwhile, the switching frequency of the device can be remarkably improved, and the device is suitable for advanced processes.

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.