402 results about "Electron mobility" patented technology

A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch further comprising: a III-nitride high-electron-mobility transistor (HEMT), the III-nitride HEMT comprising a first source terminal, a first drain terminal, and a first gate terminal; a first interface circuit operatively connected to the control terminal and to the first gate terminal; and a short-circuit detection circuit operatively connected to the first drain terminal and the first source terminal, the short-circuit detection circuit being configured to: sense a short-circuit across the first drain terminal and the first source terminal; and transmit a short-circuit detection signal to the first interface circuit, the first interface circuit being configured, upon receipt of the short-circuit detection signal, to cause the III-nitride HEMT to turn off, and / or to cause a voltage across the first gate terminal to be reduced.

The embodiment of the utility model relates to an enhancement mode high electron mobility transistor device. An enhanced mode high electron mobility transistor device includes a semiconductor body having a top surface and including a heterostructure configured to generate a two-dimensional electron gas. A high electron mobility transistor device includes a gate structure extending over a top surface of a semiconductor body, biased to electrically control a two-dimensional electron gas, and including a functional layer and a gate contact in direct physical and electrical contact with each other. The gate contact is made of a layer of conductive material, and the functional layer is made of a layer of two-dimensional semiconductor material and includes a first doped portion having P-type conductivity extending over a top surface of the semiconductor body and interposed along a first axis between the semiconductor body and the gate contact. According to the embodiment of the invention, the low power consumption of the transistor in use is ensured, and the integration of the transistor into an electronic circuit in a design step is simplified.

The present disclosure relates to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) (100) i.e. a semiconductor device (100) which includes a buffer layer (104) formed on the substrate (120). An unintentionally doped (UID) Gallium Nitride (GaN) channel layer (102) is positioned on the buffer layer (104). A barrier layer (106) is formed on the UID channel layer (102) to enable formation of two-dimensional electron gas (2DEG) at interface between UID GaN channel layer (102) and barrier layer (106). A stress transfer layer (116) having tunable intrinsic compressive mechanical stress is deposited on barrier layer (106) to enhance device performance and reliability. Further, the intrinsic stress in the stress transfer layer (116) is tailored to enhance performance in terms of higher threshold voltage and breakdown voltage, and reliability in terms of reduced dynamic RON under DC and switching stress and stable threshold voltage under ON and OFF state gate stress.

The invention provides an enhanced gallium nitride high-electron-mobility transistor. The enhanced gallium nitride high-electron-mobility transistor comprises a substrate; the first epitaxial structure is formed on the substrate, and the first epitaxial structure comprises a channel layer and a barrier layer formed on the channel layer; the passivation layer is formed on the first epitaxial structure; the grid electrode comprises a groove, and the groove penetrates through the passivation layer and the barrier layer and extends into the channel layer; the second epitaxial structure part covers the bottom and the side wall of the groove and the upper surface of the passivation layer on the left side and the right side of the top of the groove; and a gate electrode formed on the second epitaxial structure portion. The groove gate enhanced MIS-HEMT device has the beneficial effects that the uniformity, the process repeatability, the robustness and the reliability of the threshold voltage of the groove gate enhanced MIS-HEMT device are improved.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

This invention pertains to the design of a novel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with multiple metal contacts to a single contiguous p-GaN island. The invention encompasses various embodiments which introduce innovative mechanisms for threshold voltage (Vth) control through hole injection and removal.

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.

A semiconductor device including: a plurality of unit cells arranged side-by-side across a top surface of the semiconductor device, and where the plurality of unit cells are of a first type or a second type, each unit cell of the first type includes a first electrode, a second electrode, and a third electrode formed at the top surface of the semiconductor device. The second electrode is arranged to enclose the first electrode. Each of the first and second electrodes are arranged to enclose the third electrode. The unit cells of the first type form high electron mobility transistor (HEMT) cells, and the unit cells of the second type form Schottky Barrier Diode (SBD) cells.

The invention provides an epitaxial structure of a gallium nitride HEMT (High Electron Mobility Transistor) device. An in-situ nitride layer; a first high carbon concentration layer, wherein the carbon concentration of the first high carbon concentration layer is greater than 1018 cm <-3 >; a low-carbon-concentration channel layer, wherein the carbon concentration of the low-carbon-concentration channel layer is less than 1018 cm <-3 >; and a barrier layer. According to the embodiment of the invention, the existence of the in-situ nitride layer can prevent the dislocation of the bottom layer of the epitaxial structure from continuously extending upwards, and also can promote the turning annihilation of the dislocation. The channel layer is grown after the smooth surface is formed through combination, so that the smooth surface of the epitaxial structure can be obtained without a very thick channel layer, the interface quality of a key layer is further improved, and the performance and the reliability of a gallium nitride high-electron-mobility transistor device manufactured on the basis of the epitaxial structure are further improved.

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

The present application relates to the technical field of electroluminescent device preparation, in particular to an OLED light-emitting composition and an electroluminescent device comprising the composition. The OLED light-emitting composition comprises an electron transport material and a light-emitting material, the electron transport material combines o-phenanthroline and a xanthene group, and has high electron mobility and a low energy level. A boron-nitrogen compound skeleton structure with multiple benzene rings is introduced into the light-emitting material, the skeleton structure is twisted in a planar configuration, the alkyl substituents contained in the large steric group are adjusted, the π-π mutual attraction caused by the introduction of benzene rings is weakened, the intermolecular force is further weakened, and the adverse effects of concentration quenching on efficiency are weakened. The OLED device prepared by using the composition of the present application has low starting voltage, high light-emitting efficiency and better service life, can meet the requirements of current panel manufacturing enterprises for high-performance materials, and has great commercial value.

The invention discloses a synthesis method and application of a non-condensed ring electron acceptor, which are different from a traditional condensed ring structure or a single alkyl chain side chain, and a dichlorobenzene unit is introduced as a conformation regulating group. As chlorine atoms have strong electronegativity and proper atomic radius, remarkable non-covalent interaction such as Cl-S and Cl-pi can be generated among molecules. The interaction is similar to a set of precise molecular guide rails, molecules are guided to perform highly ordered pi-pi accumulation, so that electron cloud overlapping is remarkably enhanced, and an efficient electron transmission channel is constructed. According to the organic solar cell prepared based on the non-condensed ring electron acceptor material designed by the invention, the electron mobility is remarkably improved, and meanwhile, the charge recombination loss of a device is effectively reduced.

This invention discloses a silicon-based high electron mobility transistor and its fabrication method, relating to the field of semiconductor process technology. The silicon-based high electron mobility transistor includes: a substrate; an AlN nucleation layer, a high-resistivity buffer layer, a channel layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN capping layer sequentially disposed on the substrate; wherein the AlN nucleation layer includes a roughened first high-temperature AlN nucleation layer and a second high-temperature AlN nucleation layer, with the first high-temperature AlN nucleation layer disposed on the substrate. The first high-temperature AlN nucleation layer effectively blocks impurities in the substrate. Surface roughening of the first high-temperature AlN nucleation layer releases stress between the substrate and the epitaxial layer. The second high-temperature AlN nucleation layer is disposed on the roughened first high-temperature AlN nucleation layer to further release the stress accumulated in the first high-temperature AlN nucleation layer. This invention solves the technical problem in the prior art where boron atoms diffuse from the silicon substrate to the epitaxial layer, resulting in significant stress between the silicon substrate and the epitaxial layer, leading to a decrease in the crystal quality of the epitaxial layer.

The present disclosure provides a fabricating method of a high electron mobility transistor device, including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

The present disclosure provides an array substrate and a display device. The array substrate includes a substrate layer and a gate drive circuit disposed at a peripheral region of the substrate layer. The gate drive circuit includes a plurality of cascaded shift registers. The shift register includes an input circuit, an output circuit, a pull-down node control circuit, and a noise reduction circuit. At least one transistor included in the input circuit, the output circuit, and the noise reduction circuit is a first type of transistor. The pull-down node control circuit includes a plurality of transistors connected between a first voltage terminal and a first reset voltage terminal, and at least one transistor of the plurality of transistors is a second type of transistor. The first type of transistor includes a first active layer, and the second type of transistor includes a second active layer. An electron mobility of the second active layer is less than an electron mobility of the first active layer.

To provide a novel light-emitting device. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided.SOLUTION: The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side, the first layer includes a first organic compound and a second organic compound, the fourth layer includes a seventh organic compound, and the first organic compound has an electron-accepting property with respect to the second organic compound; HOMO levels of the second organic compounds are greater than or equal to - 5. 7eV and less than or equal to - 5. 2eV, and electron mobilities of the seventh organic compounds are greater than or equal to 1 * 10 - 7cm2 / Vs and less than or equal to 5 * 10 - 5cm2 / Vs when a square root of an electric field intensity [V / cm] is 600.SELECTED DRAWING: Figure 1

According to the lithium ion battery electrode material and the preparation method thereof, a composite material with molybdenum sulfide nanoparticles loaded on the surfaces of porous microspheres Ce-lambda-MnO2 is prepared through a two-step hydrothermal method, the porous structure provides a large number of active sites, the reversible capacity is improved, electrolyte permeation is promoted, and the performance of the lithium ion battery electrode material is improved. The wettability of the electrolyte on an electrode material is improved, and the lithium ion transmission rate is increased; by doping manganese dioxide with Ce, additional free electrons can be introduced, the band gap of MnO2 can be reduced, the electron mobility can be enhanced, lambda-MnO2 and MoS2 are compounded, and after a heterojunction structure is formed by the lambda-MnO2 and the MoS2, the conductivity and the capacity performance are further improved, the preparation process is simple, the price is low, and the preparation method has an industrialization prospect.

The invention provides a photoelectric detector and a preparation method, and relates to the technical field of photoelectric detectors. The photoelectric detector comprises a silicon substrate, a functional layer, an electrode layer and an insulating layer, wherein the silicon substrate comprises an n-type silicon layer and a p-type silicon layer which are sequentially stacked from bottom to top. The functional layer is located above the silicon substrate and comprises a molybdenum disulfide layer and a zinc sulfide layer which are sequentially stacked from bottom to top. According to the technical scheme, the zinc sulfide layer is introduced on the molybdenum disulfide layer to form a MoS2-ZnS heterostructure, a wide forbidden band of ZnS complements a response blind area of MoS2 to ultraviolet light, and MoS2 covers visible and near-infrared light, so that a UV-NIR full spectrum is realized. A Type-I heterojunction is formed between MoS2-ZnS heterostructures, a built-in electric field effectively inhibits recombination of photon-generated carriers, the electron mobility is high, and the responsivity and the detection degree are improved. The MoS2-ZnS heterostructure based on the silicon substrate is easy to integrate with a CMOS (Complementary Metal Oxide Semiconductor), so that miniaturization and high integration of the device are realized.

Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

The application discloses a coating liquid for preparing a PCBM electron transport layer and application thereof. The coating liquid comprises a PCBM precursor, a lithium salt, an organic polymer and a methylamine halide salt. The coating liquid provided by the application improves the conductivity of the PCBM electron transport layer, increases the electron mobility, reduces the series resistance, increases the carrier recombination resistance, reduces the carrier recombination, improves the electron transmission and extraction efficiency, and further improves the open-circuit voltage, the short-circuit current and the fill factor of the prepared perovskite solar cell, finally improves the efficiency of the perovskite solar cell and the assembly; and the application method provided by the application is simple in process, low in cost and beneficial to commercial application.

The application relates to an enhanced gallium oxide power transistor and a manufacturing method, the power transistor comprising a beta-Ga2O3 substrate, a beta-Ga2O3 unintentionally doped layer, a p-type NiOx buffer layer, an n-type beta-Ga2O3 channel layer, a p-type NiOx cap layer, a source electrode, a drain electrode and a gate electrode, wherein the beta-Ga2O3 substrate, the beta-Ga2O3 unintentionally doped layer, the p-type NiOx buffer layer and the n-type beta-Ga2O3 channel layer are stacked in sequence; the source electrode is located at one end of the n-type beta-Ga2O3 channel layer, the drain electrode is located at the other end of the n-type beta-Ga2O3 channel layer; the p-type NiOx cap layer is located on the n-type beta-Ga2O3 channel layer and between the source electrode and the drain electrode; and the gate electrode is located on the p-type NiOx cap layer. In the power transistor, a pn junction is formed between the p-type NiOx buffer layer and the upper n-type beta-Ga2O3 channel layer, which can prevent impurity ions in the beta-Ga2O3 unintentionally doped layer from penetrating into the channel layer, reduce the compensation effect of the impurity ions penetrating into the channel layer, improve the electron mobility of the channel layer, and improve the electron concentration in the channel layer and the current density of the device.

The invention provides a host compound, a dual-host material and an organic electroluminescent device, and belongs to the technical field of organic photoelectric materials, the host compound has a structure as shown in formula I. The dual-host material comprises a first host compound and a second host compound, the first host compound is a host compound with a structure as shown in a formula I; and the second host compound has a structure as shown in a formula II. The first host compound with the specific structure has higher hole mobility, the second host compound has higher electron mobility, and the first host compound and the second host compound with the specific structures are compounded, so that the hole mobility and the electron mobility can be balanced; by adding excitons in the light-emitting layer, the double-main-body material not only can improve the light-emitting efficiency and prolong the service life of a device, but also can reduce the driving voltage.

This application provides a flexible transparent semiconductor display thin film material and its preparation method. The material forms a multi-level stacked transparent semiconductor functional layer on a flexible transparent polymer substrate, consisting of alternating high-mobility sublayers and high-stability sublayers with an adjustable thickness ratio, balancing electron mobility and stability. Interface nano-modification layers are respectively set between the semiconductor functional layer, the conductive layer, and the substrate to improve interface adhesion and electronic conductivity. The transparent conductive layer adopts a multi-layer composite structure, including a transparent conductive sublayer and a metal nanolayer, improving conductivity and lifespan. Through structural optimization and interface engineering, this application significantly improves the electronic properties, environmental stability, and flexibility of the flexible thin film while maintaining high transparency, solving the problem of balancing high mobility and high stability in existing technologies. It is applicable to flexible displays, touch screens, and transparent optoelectronic devices.

The application belongs to the technical field of OLED, and specifically comprises an organic compound for a double light-emitting layer blue light device and application thereof.The structural general formula of the organic compound is shown in the following.The application can fully exert the double light-emitting layer mechanism by directly connecting a benzofuranphenanthrol group at the 7th position of a benzanthracene nucleus, improve the device efficiency, and further, when the benzanthracene nucleus directly connected position is a phenanthrene group fragment on the benzofuranphenanthrol group, the electron mobility can be further enhanced, so that the prepared device obtains lower voltage and higher efficiency.In summary, the application improves the voltage and efficiency of the double light-emitting layer device through special design of the substituent and substitution site on the benzanthracene nucleus.I

The invention relates to the technical field of semiconductor devices, and provides a high-electron-mobility transistor and a manufacturing method, and the high-electron-mobility transistor comprises a substrate structure; the source electrode and the drain electrode are arranged on the substrate structure; the P-type gallium nitride layer is arranged on the substrate structure; the N-type gallium nitride layer is arranged on the P-type gallium nitride layer, and the N-type gallium nitride layer is provided with a first opening part located at the edge part; and the charge release layer is arranged on the P-type gallium nitride layer and is positioned in the first opening part. The N-type gallium nitride layer is arranged on the P-type gallium nitride layer to form a PN junction to replace a Schottky junction, so that the problem that the reliability of the gate is reduced due to the degeneration of the Schottky junction is fundamentally avoided, the reliability of the gate structure is improved, the charge release layer can provide a path for releasing trapped charges more quickly compared with the N-type gallium nitride layer, and the reliability of the gate structure is improved. Trapped charges in the P-type gallium nitride layer are quickly released, the influence of the trapped charges on threshold voltage is reduced, and the overall stability of the transistor is improved.

There is provided an induction machine (100) comprising a rotor (120); a stator (140); and a phase-shift oscillator (160). The stator comprises: a first winding (141); and a second winding (142), arranged at a first angle (101) relative to said first winding. The phase-shift oscillator comprises: a transistor (170), the transistor (170) being a high-electron mobility transistor, HEMT; and a phase-shift network (180). The first winding is connected to a first node (181) of the phase-shift network and wherein the second winding is connected to a second node (182) of the phase-shift network, wherein the phase-shift oscillator is configured to provide a first phase electric signal at the first node and a second phase electric signal at the second node, wherein a difference between the first and second phase corresponds to the first angle. There is also provided an electric aircraft propulsion system comprising the induction machine.

The application discloses a siloxane D-A-D type perylene diimide small-molecule electronic transport layer and a preparation method thereof. Bromine perylene diimide is reacted with a primary amine containing a siloxane end group, and then is coupled with triphenylamine through a Suzuki coupling reaction to synthesize a small-molecule conjugated electrolyte. The siloxane D-A-D type perylene diimide small-molecule electronic transport layer has the following beneficial effects: first, the secondary amine in the side chain can form hydrogen bonds with F and H in the active layer, improve the interface compatibility, and improve the contact with the active layer; second, the D-A-D structure can realize intramolecular charge transfer, and excellent electron mobility can be exhibited; third, a good n-type self-doping is obtained, the work function of a high-stability metal Ag can be reduced, an ohmic contact is formed, and therefore the photovoltaic performance of a device is significantly improved; fourth, the stability can be improved due to the hydrophobicity of the siloxane; and finally, triphenylamine has a special non-planar molecular structure, and can inhibit excessive aggregation of the material.

The invention provides a semiconductor device and a preparation method thereof, a chip and electronic equipment, and relates to the technical field of semiconductors. The first doping type well region is formed in the substrate along the first side of the substrate, the stress region and the second doping type source region are formed in the first doping type well region, and the second doping type drain region is formed in the stress region; the gate structure is formed on the substrate along the first side of the substrate; wherein the stress region is formed by growing a material which is in lattice mismatch with the substrate material, and along the thickness direction of the substrate, the gate structure covers a part of the stress region and a part of the top of the first doping type well region, and is connected with the second doping type drain region and the second doping type source region. According to the technical scheme, the electron mobility can be improved, and then the current capacity of the nLDMOS is improved.

The invention relates to the field of organic photoelectric materials, in particular to an organic compound, a mixture and an organic photovoltaic device. The invention provides an organic compound as shown in a general formula (I), the compound has a large conjugate plane, and is beneficial to delocalization of electrons and improvement of the glass transition temperature; meanwhile, close packing like linear molecules is inhibited by the three-dimensional structure, so that excessive crystallization is inhibited; finally, the structure of three electron-withdrawing end groups of the organic compound provided by the invention provides a multi-dimensional electron transport channel, improves the electron mobility and inhibits recombination. Therefore, when the compound is used as an acceptor material to be applied to an organic photovoltaic device, excellent photoelectric conversion efficiency is shown.

The invention discloses a manganese-lanthanum double-element gradient doped calcium-based desulfurizing agent and a preparation method thereof, and belongs to the technical field of flue gas purification. The method comprises the following steps: preparing a precursor, namely mixing calcium hydroxide, manganous nitrate and lanthanum nitrate, and preparing the precursor by adopting a sol-gel method; gradient doping control: calcining through temperature programming, and forming a gradient doping material by utilizing the diffusion rate difference of Mn < 2 + > and La < 3 + > ions; surface electron structure regulation and control: carrying out heat treatment on the gradient doped material in an inert atmosphere, replacing Ca < 2 + > with Mn < 2 + > to form oxygen vacancy, and improving electron mobility; la < 3 + > forms a La-O-Ca bond on the surface, so that the surface energy is reduced. The preparation method is efficient, the prepared desulfurizing agent has high activity and stability, acid gas in flue gas can be effectively removed, and the problems that an existing material is low in deacidification efficiency in a medium-high-temperature low-water environment and large in medium-low-temperature spraying fly ash amount are solved.