712 results about "Electron mobility" patented technology

Lateral III-N devices such as AlGaN / GaN HEMTs can have structures which serve to improve performance and reduce current degradation. The III-N device can include a conductive substrate and a III-N material structure that includes a III-N buffer layer, a III-N channel layer and a III-N barrier layer where a compositional difference induces a 2DEG channel therein. The first portion is in ohmic contact with the 2DEG channel and the second portion extends over a top surface of the III-N barrier layer and is in direct contact with the top surface of the III-N barrier layer. The device further includes a drain-to-substrate pinch-off voltage and a maximum rated drain-to-source operating voltage which is greater than the drain-to-substrate pinch-off voltage, and the 2DEG channel is fully depleted of charge below the second portion of the drain electrode when the III-N device is biased at or above the maximum rated drain-to-source operating voltage.

The invention provides a 3C-SiC composite epitaxial structure and device structure based on 4H-SiC, and the composite epitaxial structure comprises a 4H-SiC substrate, an N-type doped epitaxial layer, a P-type doped buried layer, a carrier tunneling region, and a 3C-SiC epitaxial layer. The N-type doped epitaxial layer is arranged on the 4H-SiC substrate; the 3C-SiC epitaxial layer is subjected to secondary epitaxy or bonded on the surface of the N-type doped epitaxial layer; a carrier tunneling region is formed on a contact interface layer of the 3C-SiC epitaxial layer and the N-type doped epitaxial layer; and the P-type doped buried layer ions are implanted into the upper region of the N-type doped epitaxial layer. The structure can effectively solve the problems that in the prior art, when 4H-SiC serves as a substrate to prepare a SiC-MOS device, improvement of interface state density and channel electron mobility is limited, the conduction capacity of the device is poor, and the electrical performance and the long-term reliability are poor. The composite epitaxial structure and the device structure are high in device conduction capability and good in electrical performance and long-term reliability.

The invention discloses a junction temperature testing device and method for a high-electron-mobility transistor. A current measuring module in the junction temperature testing device for the high-electron-mobility transistor is used for acquiring current flowing through a tested device; the power supply module is electrically connected with the other end of the switch module, and the power supply module and the switch module are connected in parallel with the bus capacitor; the control module is electrically connected with the control end, the driving end and the regulation and control end of the switch module, and the control module is used for providing switching signals for the control end, the driving end and the regulation and control end of the switch module so as to control the switching states of the switch protection module, the tested device and the switch module; the heating plate is used for heating a tested device; the temperature detection module is used for measuring the temperature of the detected device; and the waveform analysis module is electrically connected with the control module, the temperature detection module and the current measurement module, and is used for obtaining and forming an experimental oscillogram of the tested device at the temperature according to the temperature, the current and the conduction time of the tested device controlled by the control module.

The invention relates to the field of gallium nitride high electron mobility transistor (GaN HEMT) compact modeling, and provides a p-GaN gate HEMT model establishment method based on a physical guided neural network (PGNN) in order to solve the problem of p-GaN gate HEMT compact model development, and the method comprises the following steps: constructing a p-GaN gate HEMT transistor model by using a TCAD simulation tool, generating a model sample, and extracting simulation data; constructing a DerivNet model and a loss function based on a physical guidance neural network; and finally, performing model training by using the simulation data to obtain the p-GaN gate HEMT model based on the physical guidance neural network.

The invention belongs to the field of organic electroluminescent materials, and discloses a host material, an organic electroluminescent material containing double hosts and an organic electroluminescent device. In the organic light-emitting device containing the double hosts, the first host compound has higher electron mobility and is stable in structure. According to the organic electroluminescent device, triplet excitons are dispersed on two main bodies by using a double-main-body material, triplet-triplet annihilation is reduced, the driving voltage of the organic electroluminescent device is reduced, the luminous efficiency of the device can be improved, and the service life of the device can be prolonged.

A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.

A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch further comprising: a III-nitride high-electron-mobility transistor (HEMT), the III-nitride HEMT comprising a first source terminal, a first drain terminal, and a first gate terminal; a first interface circuit operatively connected to the control terminal and to the first gate terminal; and a short-circuit detection circuit operatively connected to the first drain terminal and the first source terminal, the short-circuit detection circuit being configured to: sense a short-circuit across the first drain terminal and the first source terminal; and transmit a short-circuit detection signal to the first interface circuit, the first interface circuit being configured, upon receipt of the short-circuit detection signal, to cause the III-nitride HEMT to turn off, and / or to cause a voltage across the first gate terminal to be reduced.

The invention provides an oxazolobenzocarbazole compound, an organic electroluminescent device and a display device, and relates to the technical field of organic electroluminescent materials. The oxazolobenzocarbazole compound disclosed by the invention has a proper energy level and good electron mobility, and can be used as an electron transport material to effectively reduce the potential barrier of electron transport and effectively block the diffusion of holes to one side of an electron transport layer, so that the luminous efficiency of a device can be further improved, the driving voltage can be reduced, and the service life can be prolonged.

The embodiment of the utility model relates to an enhancement mode high electron mobility transistor device. An enhanced mode high electron mobility transistor device includes a semiconductor body having a top surface and including a heterostructure configured to generate a two-dimensional electron gas. A high electron mobility transistor device includes a gate structure extending over a top surface of a semiconductor body, biased to electrically control a two-dimensional electron gas, and including a functional layer and a gate contact in direct physical and electrical contact with each other. The gate contact is made of a layer of conductive material, and the functional layer is made of a layer of two-dimensional semiconductor material and includes a first doped portion having P-type conductivity extending over a top surface of the semiconductor body and interposed along a first axis between the semiconductor body and the gate contact. According to the embodiment of the invention, the low power consumption of the transistor in use is ensured, and the integration of the transistor into an electronic circuit in a design step is simplified.

A high electron mobility transistor includes a semiconductor structure, a stepped trench, an electrode, and a gate. The semiconductor structure includes a barrier layer and a channel layer. The barrier layer is disposed on the channel layer. A two-dimensional electron gas is formed at an interface between the channel layer and the barrier layer. The stepped trench is disposed in the semiconductor structure. The electrode is disposed in the stepped trench. The gate is disposed on the barrier layer. The stepped trench has a first width and a second width. The first width is greater than the second width.

Provided are a heterocyclic derivative and an organic electroluminescent device thereof, which relates to the field of organic photoelectric materials. The heterocyclic derivative of Formula I has high electron mobility and great hole blocking performance, and thus the organic electroluminescent device prepared by using the heterocyclic derivative as the electron transport region material, especially the hole blocking material, has low drive voltage and high luminous efficiency. The organic electroluminescent device can also include a hole transport region, and the hole transport region, especially the emissive auxiliary layer, contains the triarylamine compound of Formula II. Since the electron transport region and the hole transport region of the device can effectively balance carriers, which reduces the quenching of excitons and improves the recombination probability of carriers, the device shows low drive voltage and high luminous efficiency.

The present disclosure relates to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) (100) i.e. a semiconductor device (100) which includes a buffer layer (104) formed on the substrate (120). An unintentionally doped (UID) Gallium Nitride (GaN) channel layer (102) is positioned on the buffer layer (104). A barrier layer (106) is formed on the UID channel layer (102) to enable formation of two-dimensional electron gas (2DEG) at interface between UID GaN channel layer (102) and barrier layer (106). A stress transfer layer (116) having tunable intrinsic compressive mechanical stress is deposited on barrier layer (106) to enhance device performance and reliability. Further, the intrinsic stress in the stress transfer layer (116) is tailored to enhance performance in terms of higher threshold voltage and breakdown voltage, and reliability in terms of reduced dynamic RON under DC and switching stress and stable threshold voltage under ON and OFF state gate stress.

The invention discloses a barrier GaN heterojunction transistor with low source-drain resistance and high Al component and a preparation method thereof, the transistor structurally comprises a substrate, a composite buffer layer, a channel layer, an isolation layer, a barrier layer and a cap layer which are sequentially arranged from bottom to top, source and drain electrodes are arranged at two ends of the surface of the cap layer, and a gate electrode is arranged between the source and drain electrodes. Etching is carried out on a partial region below the source and drain electrodes to form a nano groove array structure, inclined-angle ion implantation activation is carried out, N-type heavy doping is formed near a nano groove, and metal is filled in the nano groove to form the source and drain electrodes. Source and drain electrode metal of the structure is in direct contact with 2DEG, and forms ohmic contact after being annealed together with an N-type heavily doped region, so that the contact resistance is reduced. According to the method, the problem that the resistance value of a source-drain electrode contact resistor prepared by a conventional method of a high-Al-component barrier GaN heterojunction material is large is solved, the output current of a GaN heterojunction high-electron-mobility transistor device is increased, and the preparation process is simple, easy to implement and outstanding in effect.

The invention provides a semiconductor laser element with a spin polarization sub-layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the spin polarization sub-layers of a multi-layer structure are arranged between the upper limiting layer and the upper waveguide layer in the semiconductor laser element, and the electron mobility distribution characteristic and the piezoelectric polarization coefficient distribution characteristic of each spin polarization sub-layer are limited. Specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin polarization sub-layer form an asymmetric discrete potential barrier, lattice distortion structure polarization is modulated, charge dipole momentum net accumulation is increased, the piezoelectric polarization effect of the active layer is regulated and controlled, the quantum restriction effect is suppressed, energy band inclination of the active layer is reduced, and hole injection band order is reduced. The overlapping probability of the electron hole wave function is improved, and the internal quantum efficiency is improved.

The embodiment of the invention relates to a high-electron-mobility transistor and a preparation method thereof, and the high-electron-mobility transistor comprises a substrate; the heterojunction structure is located on the substrate and comprises a channel layer and a barrier layer which are sequentially stacked in the direction away from the substrate, and a two-dimensional electron gas channel is formed in the area, close to the barrier layer, of at least part of the channel layer; the source electrode and the drain electrode are distributed on the heterojunction structure at intervals; a gate layer on the heterojunction structure and between the source electrode and the drain electrode; the RESURF structure layer is located on the heterojunction structure and comprises a first structure part adjacent to the gate layer in the direction parallel to the plane where the substrate is located and a second structure part extending from the first structure part to the direction away from the gate layer; the thickness of the part, located between the first structure part and the channel layer, of the barrier layer is smaller than that of the part, located between the second structure part and the channel layer; therefore, the RESURF structure plays a better role in the device.

The invention provides an enhanced gallium nitride high-electron-mobility transistor. The enhanced gallium nitride high-electron-mobility transistor comprises a substrate; the first epitaxial structure is formed on the substrate, and the first epitaxial structure comprises a channel layer and a barrier layer formed on the channel layer; the passivation layer is formed on the first epitaxial structure; the grid electrode comprises a groove, and the groove penetrates through the passivation layer and the barrier layer and extends into the channel layer; the second epitaxial structure part covers the bottom and the side wall of the groove and the upper surface of the passivation layer on the left side and the right side of the top of the groove; and a gate electrode formed on the second epitaxial structure portion. The groove gate enhanced MIS-HEMT device has the beneficial effects that the uniformity, the process repeatability, the robustness and the reliability of the threshold voltage of the groove gate enhanced MIS-HEMT device are improved.

The invention discloses an HEMT device. The HEMT device comprises a substrate; the channel layer is arranged on one side of the substrate, and the material of the channel layer comprises undoped GaN; the heteroepitaxial structure comprises at least one superlattice structure formed by stacking an AlGaN layer and a GaN layer, and in each superlattice structure, the GaN layer is arranged on the side, away from the channel layer, of the AlGaN layer; the barrier layer is arranged on the side, away from the channel layer, of the heteroepitaxial structure, and the material of the barrier layer comprises AlGaN; and the total thickness of the channel layer and the heteroepitaxial structure is 150-350 nanometers. According to the embodiment of the invention, the heteroepitaxial structure is arranged between the channel layer and the barrier layer, so that a plurality of two-dimensional electron gas channels can be formed, the crowding condition of electrons in the single and two-dimensional electron gas channels is reduced, the electron mobility is improved, and the on-resistance is reduced; by designing the total thickness of the channel layer and the heteroepitaxial structure, the chip manufacturing process does not need to be redesigned in the subsequent process, and the situation that the processing difficulty of the chip manufacturing process in the subsequent process is increased is avoided.

The invention provides a high electron mobility transistor epitaxial structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a sapphire substrate; growing a boron-doped first buffer layer on the sapphire substrate: during growth, gradually reducing a boron component in a reaction material from a first preset value to 0 in a first preset duration, and continuously growing for a second preset duration after the boron component is reduced to 0, so that x in the first buffer layer is gradually reduced, and the boron component is gradually reduced to 0 from bottom to top; a boron-free GaN second buffer layer is grown on the first buffer layer, the growth rate of the second buffer layer is lower than that of the first buffer layer, and the thickness of the second buffer layer is larger than that of the first buffer layer; and sequentially growing a GaN high-resistance layer and a GaN epitaxial layer on the second buffer layer. Compared with the prior art, the defect density of the device can be effectively improved, electric leakage is reduced, and the stability and consistency of the device are improved.

The invention discloses a luminescent material composition, ink, a luminescent device and a display device. The luminescent material composition comprises a host material and a polarity adjusting material, and the absolute value of the ratio of the zero field hole mobility to the zero field electron mobility of the host material is not equal to 1. The luminescent material composition provided by the invention can meet the requirements of products with high comprehensive performance.

A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention belongs to the technical field of organic compounds, and particularly relates to an anthryl derivative and a light-emitting device. The structural general formula of the anthryl derivative is as shown in formula (I): # imgabs0. The anthryl derivative disclosed by the invention is good in thermal stability and high in electron mobility, and can be matched with a second-generation blue phosphorescent material luminescent system.

An apparatus includes a substrate; a group III-Nitride buffer layer on the substrate; a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer may include a higher bandgap than a bandgap of the group III-Nitride buffer layer; a source electrically coupled to the group III-Nitride barrier layer; a gate electrically coupled to the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; and a conductive metallic region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer. Additionally, the conductive metallic region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer.

The invention belongs to the field of organic electroluminescence, and discloses a blue light material containing anthryl and pyrenyl, a preparation method and an organic electroluminescent device. The structure of the blue light material containing anthryl and pyrenyl is as shown in a chemical formula I: # imgabs0 #. According to the blue light material compound containing anthryl and pyrenyl provided by the invention, two rigid structures of 4, 4, 5, 5-tetramethyl-4, 5-dihydropyrene group and anthryl are introduced as mother nuclei, so that the material has good thermal stability and film-forming property, and the blue light material compound containing anthryl and pyrenyl has a wide application prospect. Furthermore, the types of bridging groups and connected substituent groups are selectively increased, so that the electron mobility is improved, and a device with low driving voltage, excellent luminous efficiency and long service life is finally obtained.

The invention discloses a dynamic power management SSD system based on AI, and relates to the technical field of intelligent storage power management, and the dynamic power management SSD system comprises the steps: carrying out the pulse domain fusion of a pulse environment feature and an electron mobility change feature in an SSD, and generating a fusion pulse feature map in combination with a pulse attention mechanism; constructing a neural pulse dynamic decision model based on a bionic pulse neural network architecture, and obtaining a power supply state decision instruction by inputting a fusion pulse feature map; and dynamically updating the parameters of the neural pulse dynamic decision model through an online learning algorithm based on the power supply switching characteristic parameters. According to the method, pulse domain fusion is carried out on the pulse environment features and the electron mobility change features in the SSD, and the fusion pulse feature map is generated in combination with a pulse attention mechanism, so that effective integration of multi-source information is realized, and the perception capability of complex environment changes is improved.

A High-Electron-Mobility-Transistor that may include a substrate with a buffer layer formed on the substrate. A recess formed in the buffer layer. A barrier layer formed on the buffer layer. A gate recess formed in the barrier layer, the gate recess overlaps the recess in the buffer layer. A drain terminal formed at a first side of the barrier layer. A source terminal formed at a second side of the barrier layer. An isolation structure formed within the gate recess proximate the drain terminal. A doped structure formed adjacent to the isolation structure within the gate recess proximate the source terminal. A gate terminal formed on the doped structure.

The invention provides a positive electrode active material and a preparation method thereof, a positive plate, a battery, a battery pack and electric equipment. The positive electrode active material comprises a positive electrode active material matrix and a coating layer existing on the surface of the positive electrode active material matrix, the coating layer comprises a janus material; the janus material comprises a metal carbide and a metal oxide. According to the positive electrode active material provided by the invention, the surface of the positive electrode active material substrate is coated with the janus material, the janus material comprises the metal carbide and the metal oxide, and Schottky junctions can be formed on the surfaces of positive electrode active material particles, so that an electric field for one-way movement of electrons is formed, and the movement rate of the electrons is accelerated; therefore, the electronic conductivity of the positive electrode active material is improved, and the charging capacity and the cycle performance of the battery are improved.

The epitaxial structure comprises a substrate layer, a polymerization layer, a high-resistance layer, a middle layer, a channel layer and a barrier layer which are sequentially arranged from bottom to top, the polymerization layer comprises a combination of a buffer layer and a transition layer, the channel layer is provided with a two-dimensional electron conducting channel, and the high-resistance layer is arranged between the high-resistance layer and the middle layer. The material composition of the barrier layer is ALInGaN, and the channel layer is formed at the interface of the barrier layer and the intermediate layer. According to the epitaxial structure disclosed in the technical scheme, AlInGaN is adopted as a barrier layer material to replace a traditional AlGaN barrier layer, the lattice constant of the barrier layer can be adjusted by introducing the In element, lattice mismatch between the barrier layer and a GaN channel layer is reduced, and meanwhile high polarization intensity is kept, so that the two-dimensional electron gas concentration is improved, and meanwhile the performance of the epitaxial structure is improved. The interface defects are reduced, and the electron mobility is improved.

The invention discloses a light detector and a manufacturing method thereof. The light detector comprises a lower electrode layer, an absorption layer and an upper electrode layer. And the absorption layer is positioned on the lower electrode layer and comprises a material of which the electron mobility needs to be greater than 300cm < 2 > / Vs and is also greater than twice of the hole mobility. The upper electrode layer is located on the absorption layer and is configured to absorb high-speed photoelectrons scattered around the upper electrode and leave low-speed photoholes, so that positive charges are generated on the upper surface and photovoltages are generated on the absorption layer, and then downward photocurrents are generated. The absorption layer of the photodetector comprises the material with the electron mobility being two times greater than the hole mobility, so that the photocurrent can be generated by utilizing the great difference of the electron-hole mobility, and the photodetector can be independently operated at room temperature without the assistance of a cooling system and can also be operated under zero bias voltage; therefore, the infrared ray detection with high detection rate can be provided.

This invention pertains to the design of a novel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with multiple metal contacts to a single contiguous p-GaN island. The invention encompasses various embodiments which introduce innovative mechanisms for threshold voltage (Vth) control through hole injection and removal.