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1252 results about "Performance improvement" patented technology

Performance improvement is measuring the output of a particular business process or procedure, then modifying the process or procedure to increase the output, increase efficiency, or increase the effectiveness of the process or procedure.

Increasing the range of access point cells for a given throughput in a downlink of a wireless local area network

The present invention provides a method and an apparatus may increase or extend the range of wireless communication cells for a given throughput in a downlink of a wireless communication system. When transmitting data in a downlink of a plurality of access point cells in a wireless local area network (WLAN), the range of the downlink may be increased for a given throughput under one or more radiated power constraints. The method includes providing a plurality of antennas at an access point to transmit the data to a wireless unit under at least one of a first and a second radiated power constraints. The method further includes using the plurality of antennas for beamforming over a group of sub-carriers subject to the first and / or second radiated power constraints. Under one or more radiated power constraints, a multiple antenna based beamforming may extend the range of a wireless communication for a user of a wireless unit that may be located within a coverage area across the plurality of access point cells of a Wi-Fi network associated with the WLAN. A joint beamforming optimized over all of sub-carriers may account for a European regulation restriction into at least one of an averaged and a spectral density Equivalent Isotropic Radiated Power (EIRP) constraint. In this way, an Orthogonal Frequency-Division Multiplexing (OFDM) based joint beamformer may provide a significant performance improvement and range extension.
Owner:WSOU INVESTMENTS LLC +1

Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
Owner:YALE UNIV
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