8results about How to "Improve read and write speed" patented technology

The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof and a storage system. The semiconductor device comprises a first semiconductor structure and a bonding pad lead-out structure; the first semiconductor structure comprises a semiconductor layer, a transistor, a conductive structure, an insulating structure, a contact structure and a connecting structure, and the semiconductor layer is provided with a first side and a second side which are opposite; the transistor is located on the first side of the semiconductor layer; the conductive structure is located on the first side of the semiconductor layer; the insulating structure penetrates through the semiconductor layer; the contact structure is located on one side of the conductive structure away from the insulating structure and extends to the conductive structure; the connecting structure penetrates through the insulating structure and extends to the conductive structure; the pad lead-out structure is located on the second side of the semiconductor layer. Through arranging the conductive structure, power supply from the back surface of the first semiconductor structure is realized, the process is simple, the wiring path is short, and the read-write speed of the chip is improved.

The invention discloses a matching method for automatic matcher equipment, which relates to the technical field of radio frequency impedance matching and is applied to radio frequency impedance matching equipment, and the radio frequency impedance matching equipment is used for connecting a radio frequency output device and a plasma load and controlling the output power of the radio frequency output device to be effectively transmitted to the plasma load. According to the matching method for the automatic matcher equipment, parameter scanning is carried out on two adjustable vacuum capacitors through a two-dimensional optimization scanning algorithm, and target matching parameters are found in advance and stored in a nonvolatile storage module; after the plasma generating device is started, the central processing unit does not need to re-execute full-range scanning, can directly call pre-stored parameters, and controls the capacitor driving mechanism to be quickly adjusted to a target state; even if the initial matching parameters are called in an extreme scene and secondary fine tuning is started, the problem of unstable power caused by scanning lag in an existing scheme is avoided, and the strict requirement of a high-precision process for ignition, namely stability, is met.

The application discloses an industrial process control data access method supporting a multi-user data exchange protocol and relates to the technical field of data access.The application sets a cache space, analyzes data information corresponding to each data in underlying data, obtains a data evaluation coefficient, and judges whether the data is suitable for being stored in the cache space, so that the data frequently accessed can be stored in the cache space, the number of access to the underlying data can be reduced, the data access speed is improved, whether expansion is needed is judged, the capacity of the cache space can be increased, more data can be stored in the cache, the situation that the cache hit rate is low can be reduced, the data access speed and response time are improved, the priority of each user data stream is set, limited resources can be more effectively allocated to important data streams, and the transmission rate and response time of the important data streams are improved.

The application provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, an isolation region in the substrate and defining a plurality of active regions, a plurality of bit lines on the substrate, and a plurality of contact plugs between the bit lines, wherein each contact plug comprises a bottom in the active region of the substrate, and the side of the bottom adjacent to the active region comprises at least a first side and a second side in different planes. By forming a plurality of sides in different planes adjacent to the active region, the contact area with the active region is increased, the contact resistance is reduced, the contact performance of the semiconductor device is improved, and the read / write speed of the semiconductor device is improved.

This disclosure provides a data archiving method, an electronic device, and a readable storage medium. The method includes: acquiring monitoring data collected by at least one monitoring subsystem; storing the monitoring data into multiple data objects corresponding to the monitoring subsystem according to a preset rule; controlling a first thread corresponding to the monitoring subsystem to read the data objects into a corresponding data queue in a preset order; and controlling a second thread corresponding to the monitoring subsystem to write the data objects in the data queue into a database each time the first thread reads a data object into the data queue.

The application belongs to the technical field of computers and relates to a page view processing method for a React application and related equipment.The method comprises the following steps: in response to a page view processing request of a React application, obtaining service-side view data according to a view ID in the page view processing request, and obtaining local cache view data corresponding to the view ID from an IndexedDB database connected to the React application; reading target field information of the local cache view data, and judging whether the local cache view data has updates according to the target field information; if there are updates, merging the service-side view data and the local cache view data and creating snapshot data, otherwise creating snapshot data according to the service-side view data; updating the snapshot data to a Redux data node and the local cache view data, updating the state of a component of the React application based on the updated Redux data node, and performing page view rendering based on the updated component state.The application scheme is fast in view processing response, easy to extend and high in data security.

The invention provides an automobile electronic control system data storage method and system, and relates to the field of data storage, the method comprises the following steps: pre-dividing data storage areas on a storage device, and setting a data area basic information block at the initial part of each data storage area; traversing the basic information blocks of all the data storage areas, and generating a data area basic information dictionary in a memory; when a data writing operation is carried out, calculating a target physical address of to-be-stored data on the storage device according to the starting time of the time slice to which the to-be-stored data belongs and the total offset address of the current effective data storage area; and executing data writing, and if writing succeeds, completing the operation. According to the technical scheme, the data storage reliability is improved, and the data storage reliability is further improved through a designed multi-storage-device data mirror image storage auxiliary mode.

The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a first semiconductor structure and a bonding pad leading-out structure, the first semiconductor structure comprises a substrate, a shallow trench isolation structure and a peripheral circuit, the substrate is provided with a first side and a second side which are opposite, the shallow trench isolation structure penetrates through the substrate, and the peripheral circuit is arranged on the first side of the substrate; the pad lead-out structure is located on the second side of the substrate. According to the semiconductor device provided by the invention, the shallow trench isolation structure penetrates through the substrate to ensure that the thickness of the substrate is relatively thin, so that power supply from the back surface of the first semiconductor structure can be realized, the wiring path is short, and the read-write speed of a chip is favorably improved.