6229 results about "Heterojunction" patented technology

A vertical high-electron-mobility transistor, HEMT (100), comprising: a substrate (310); a drain contact (410), the drain contact being a metal contact via through said substrate; a pillar layer (500) arranged above the drain contact (410) and comprising at least one vertical pillar (510) and a supporting material (520) laterally enclosing the at least one vertical pillar (510); a heterostructure mesa (600) arranged on the pillar layer (500), the heterostructure mesa (600) comprising an AlGaN-layer (610) and a GaN-layer (620), together forming a heterojunction (630); at least one source contact (420a, 420b) electrically connected to the heterostructure mesa (600); a gate contact (430) arranged on said heterostructure mesa (600), and above the at least one vertical pillar (510); wherein the at least one vertical pillar (510) is forming an electron transport channel between the drain contact (410) and the heterojunction (630).

The invention discloses a preparation method of a two-dimensional heterojunction structure, and belongs to the technical field of two-dimensional materials. According to the method, the difference between the optimal viscosity temperature of PC and the optimal viscosity temperature of PPC is utilized, the two-dimensional heterojunction structure comprising the upper supporting layer and the lower supporting layer on the PPC film without viscosity falls on the PC film with high viscosity within the temperature range of 90-110 DEG C, transfer of the two-dimensional heterojunction structure is achieved, and therefore preparation of the two-dimensional heterojunction structure is completed. By adopting the method, pollution and damage to the two-dimensional material and the supporting layer caused by an organic matter extracting and soaking or high-temperature annealing process in the prior art can be avoided; meanwhile, PC and PPC are flexible organic film materials, stress borne by the two-dimensional material can be effectively reduced, and therefore the two-dimensional material is more uniform.

The invention discloses a SnO2 / SnS2 / AgS nano material with piezoelectric electro-catalytic tooth whitening and sterilizing performance and a preparation method and application thereof, and the preparation method comprises the following steps: (1) dripping a silver nitrate aqueous solution into a prepared SnO2 / SnS2 nano material aqueous dispersion, carrying out hydro-thermal treatment for 2 hours, centrifuging, washing and drying to obtain a SnO2 / SnS2 / Ag2S ternary semiconductor heterojunction nano material; (2) food indigo is adopted to simulate tooth surface pigments, piezoelectric electro-catalytic degradation is carried out by using the SnO2 / SnS2 / Ag2S ternary semiconductor heterojunction nanomaterial, and the pigment degradation efficiency can reach 95% or above; (3) the SnO2 / SnS2 / Ag2S heterojunction nanomaterial is used for piezoelectric electro-catalysis treatment of the streptococcus mutans pellicle, and the antibacterial rate of the pellicle can reach 90% or above; and (4) compared with a 3% H2O2 aqueous solution for treating the enamel surface structure, the SnO2 / SnS2 / Ag2S nano-material piezoelectric electro-catalysis treatment of teeth has small damage to the enamel surface structure. According to the invention, more nano materials with tooth whitening and sterilizing performance and the preparation method thereof are provided, so that the problems of single variety, single preparation method, low electron-hole separation efficiency and large side effect of the existing tooth whitening and sterilizing nano materials are solved.

The present invention relates to a gallium oxide power diode with a high breakdown voltage and a preparation method thereof. The preparation method includes: selecting a substrate layer, preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; preparing an anode on the upper surface of the drift layer; performing a low-temperature annealing process on the device to obtain the gallium oxide power diode; wherein, both the substrate layer and the drift layer are Si- or Sn-doped β-Ga2O3 materials, and the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni / Au metal stack, and a NiO layer with P-type characteristics is formed at the interface between the metal Ni and the drift layer, and the NiO layer and the drift layer form a heterojunction PN junction structure. The preparation method of the present invention can form a heterojunction PN junction structure with a P-type characteristic thin layer NiO layer through low-temperature annealing, can modulate the electric field distribution, improve the interface characteristics between the anode metal and gallium oxide, reduce the reverse leakage current, and increase the breakdown voltage of the device.

The invention provides a preparation method of laser cladding heterostructure stainless steel. According to the method, dried stainless steel pre-alloyed powder is subjected to laser melting deposition to form heterostructure stainless steel alloy with cross deposition of coarse grains and fine grains; the grain size of the fine crystal is 3-6 [mu] m, and the structure of the fine crystal layer is an equiaxed structure; the grain size of the coarse crystal is 20-50 [mu] m, and the structure of the coarse crystal layer is a columnar crystal formed along the Z axis. According to the method, the specific coarse grain / fine grain cross deposition heterostructure is presented in the stainless steel by changing the deposition layer process parameters and the scanning path, the material strength is improved while the material ductility is guaranteed, and the alloy has the excellent mechanical property.

The invention discloses a communication encryption method based on a two-dimensional inorganic / inorganic Van der Waals heterojunction polarized photoelectric detector, and belongs to the technical field of photoelectric devices. The photoelectric detector comprises a substrate, two-dimensional MoSe2 material layers, two-dimensional ReS2 material layers and a thin film electrode, wherein the two two-dimensional material layers form a Van der Waals vertical heterojunction and are of an II-type heterostructure; due to anisotropic light absorption of ReS2, effective carrier collection and transport capabilities of MoSe2 and an inhibition effect of heterojunction on dark current, the photoelectric property of the two-dimensional ReS2 / MoSe2 photoelectric detector is obviously improved, and meanwhile, the two-dimensional ReS2 / MoSe2 photoelectric detector has high responsivity of 89.4 A / W, fast response speed of 30.5 s and polarization sensitive characteristics, and can be applied to the field of photoelectric detectors. On the basis, information is subjected to multiple encryption by means of a polarization state information encryption technology, so that the concealment and security of an information transmission process can be greatly improved, and a new possibility is provided for the development of a security communication technology in the future.

The invention relates to the technical field of electronic devices, in particular to a monomolecular electric memristor based on dipole control and a preparation method thereof.The monomolecular electric memristor comprises a molecular heterojunction, and the molecular heterojunction is formed by connecting dipole molecules and graphene point electrodes through amido bonds; the dipole molecule comprises an amide structure based on a carbazole nitrogen-containing heterocyclic ring unit, under the action of an external electric field, a side chain chemical bond of the dipole molecule can rapidly rotate, the size and direction of an intramolecular dipole moment can be changed, the molecule can be rapidly and stably switched among different resistance states, and the read-write speed of the memristor is remarkably improved; the storage state is stably kept under the power-off condition, and the long-term stability and reliability of the memristor function are ensured. The preparation method comprises the processes of introducing dipole molecules and forming amido bonds between the dipole molecules and the graphene point electrode, and the preparation method is simple and convenient to operate, mild in condition and beneficial to large-scale production.

The invention provides conductive paste for a heterojunction solar cell and a preparation method of the conductive paste, and belongs to the field of conductive paste. The spherical nano-silver, the silver nanowires and the silver nanosheets are introduced, a three-dimensional conductive network is formed through three metal shapes, the conductivity of the paste is remarkably improved, high stability is kept in long-term use through the synergistic effect, and degradation of the conductivity is avoided; the carbon nanotubes are modified through mixed acid and a coupling agent, so that the dispersity is improved, the interface bonding force is enhanced, and the conductivity and mechanical strength of the slurry are improved; according to the graphene, the dispersity and compatibility are improved through introduction of sulfydryl, and the conductivity is restored through reduction of sodium borohydride; silver-coated silicon carbide is used as a filler to improve conductivity, retain hardness of silicon carbide, enhance wear resistance of the slurry and prolong service life; through the synergistic effect of the modified carbon nanotubes, the modified graphene and the silver-coated silicon carbide, the paste shows excellent performance in the aspects of conductivity, thermal stability and mechanical strength.

The invention belongs to the technical field of electronic components, and discloses an ammonia gas sensor based on layered MoTe2 and TiO2 heterojunction, and a preparation process and application thereof. The ammonia gas sensor comprises a gas sensitive material and an interdigital electrode plate, wherein the surface of the interdigital electrode plate is coated with the gas sensitive material by adopting a dispensing method. The gas sensitive material is a nano composite material formed by molybdenum ditelluride and titanium dioxide. The method is simple in production process and low in cost, and the obtained gas-sensitive material has relatively high sensitivity, selectivity and rapid recovery to ammonia gas at room temperature and a detection lower limit as low as ppb level. According to the present invention, the excellent ammonia gas detection performance at the room temperature is provided so as to hopefully provide good prospects in the application of the new generation portable low-power-consumption room temperature ammonia gas sensor.

The invention discloses a low-temperature silver-coated copper conductive silver paste suitable for heterojunction solar cell nickel screen printing, which comprises the following components in percentage by mass: 10-70% of spherical silver-coated copper powder, 15-80% of submicron silver powder, 0.5-5% of nano silver powder, 1-6% of resin, 0.2-4% of assistant and 0.5-3% of solvent, wherein the resin comprises epoxy resin with the epoxy equivalent of 200 to 260 and rubber toughened epoxy resin with the weight-average molecular weight of 10000 to 20000. Wherein the epoxy resin with the epoxy equivalent of 200-260 provides ink passing performance, and nickel net narrow line width printing is guaranteed; the high-molecular-weight resin with the weight-average molecular weight of 10000-20000 is used as the thixotropic agent, so that the printing line type and the height-width ratio are ensured. The line width of a heterojunction battery prepared by matching the slurry with nickel net narrow line width printing can be as low as 18 microns, and the conversion efficiency of a battery piece is improved on the basis of greatly reducing the silver consumption of a single piece.

A method for treating a stack includes a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, the method including exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW / m2.

The invention relates to the technical field of MOS semiconductors, and discloses a heterojunction-based silicon carbide groove type MOSFET device structure and a preparation process thereof.The heterojunction-based silicon carbide groove type MOSFET device structure comprises a plurality of parallel MOS cells, each MOS cell comprises a drain electrode, a source electrode, a grid electrode and a semiconductor epitaxial layer, and each semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer; a groove is formed in the upper surface of the single MOS cell and located below the grid electrode, an N + layer is deposited in the groove, and the N + layer comprises a left N + layer and a right N + layer. Through the design of the split type left N + layer and the right N + layer in the groove and the combination of the middle N-layer or the middle P-layer filled in the middle, the electric field concentration phenomenon at the bottom of the groove is effectively dispersed, and the electric field peak value at the edge of the N drift layer is further inhibited in cooperation with the right triangle arrangement of the blocking ion bubbles, so that the breakdown voltage and the reliability of the device are remarkably improved, and the reliability of the device is improved. The method is suitable for high-voltage application scenes.

The present disclosure provides an orbitronic device having orbital Hall effect or inverse orbital Hall effect, and method for enhancing the efficiency thereof. The orbital torque device comprises: a ferromagnetic / non-magnetic heterojunction formed by compounding a ferromagnetic layer and a non-magnetic layer as an orbital current source, wherein the ferromagnetic layer contains a ferromagnetic material, the non-magnetic layer contains a non-magnetic material with weak spin-orbit coupling, the non-magnetic layer is used as an orbital Hall channel to generate orbital current, and the orbital current enters the ferromagnetic layer, so that an orbital torque is generated through an orbital-spin conversion effect of the ferromagnetic layer to realize switching of a magnetic moment. The present disclosure can provide orbitronic device with low cost and good performance.

The invention relates to the technical field of heterojunction solar cells, and particularly discloses a selective electrode contact heterojunction cell preparation method and a heterojunction cell, and the method comprises the steps: carrying out the first texturing of a silicon wafer substrate, carrying out the mask layer preparation of the textured silicon wafer, and carrying out the first patterning processing of the silicon wafer. Performing slotting treatment on two sides of the silicon wafer based on picosecond laser, performing secondary texturing on the silicon wafer, placing the cleaned silicon wafer in a second texturing mixed solution so as to generate a large textured pyramid structure on the inner bottom surface of a groove in the two sides of the silicon wafer, and removing the first mask layer from the silicon wafer after secondary texturing to obtain a second textured pyramid structure; sequentially depositing a plurality of layers including an intrinsic amorphous silicon layer and the like on the two surfaces of the silicon wafer, printing a second mask layer in a counterpoint manner in other areas of the silicon wafer which is provided with the groove in the first time of patterning based on exposure and development, electroplating a copper grid line on the silicon wafer, and sequentially removing the second mask layer and a copper seed layer on the silicon wafer after electroplating the grid line; the selective electrode contact copper grid line heterojunction solar cell is obtained, the problem of grid separation of the copper grid lines is solved, and the cell efficiency is improved.

The invention provides a track electronic device based on a track Hall effect and a magnetic memory device. The track electronic device comprises a substrate; the ferromagnetic / non-magnetic heterojunction structure is prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track source, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure is made of a 3d-5d metal material and a two-dimensional TMD material, and the ferromagnetic layer structure is an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer. According to the orbital electronics device and the magnetic storage device which are formed on the basis of an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer as a ferromagnetic layer, the orbital torque efficiency can be enhanced, the critical overturning current density is reduced, and the overturning speed is increased.

The invention discloses a hybrid passivation back contact battery and a preparation method thereof, the battery comprises a silicon wafer, the silicon wafer comprises a first surface and a second surface which are oppositely arranged, the second surface comprises a first area and a second area, and the area of the first area is larger than that of the second area; the heterostructure comprises a first passivation layer and a first doping layer which are at least stacked on the first region; the first electrode structure is located on the first doping layer in the heterostructure; the first passivation structure comprises a tunneling oxide layer and a second doping layer which are stacked on the second region; the second electrode structure is located on the second doping layer in the first passivation structure, and the first electrode structure and the second electrode structure are electrically isolated through an isolation groove; and the second passivation structure is located on the first surface of the silicon wafer. The passivation effect of the HTBC battery is good, and the photoelectric conversion efficiency can be remarkably improved; and the preparation process of the battery is simple, few in process steps and low in equipment cost.

The invention provides antioxidant copper powder for low-temperature slurry, low-temperature sintered copper slurry and a preparation method of the low-temperature sintered copper slurry, and belongs to the technical field of slurry for heterojunction batteries. The antioxidant copper powder comprises copper powder and a coating agent coating the surface of the copper powder; wherein the coating agent comprises acrylic acid, oleic acid and paraformaldehyde. The anti-oxidation copper powder is formed by coating the surface of the copper powder with the coating agent formed by the acrylic acid, the oleic acid and the paraformaldehyde, and the low-temperature sintering copper paste formed by matching the anti-oxidation copper powder with other components can realize low-temperature sintering in air, does not need a protective atmosphere and has good conductivity.

The invention provides a multifunctional floating gate transistor based on a two-dimensional material heterojunction and a preparation method thereof, and relates to the technical field of semiconductors, and the multifunctional floating gate transistor comprises a substrate which comprises a back gate and a gate dielectric layer which are stacked from bottom to top; the floating gate layer is located on the surface, away from the back gate, of the gate dielectric layer; the tunneling dielectric layers are located on the surfaces, away from the back gate, of the floating gate layer and the gate dielectric layer respectively, and the floating gate layer is covered with the tunneling dielectric layers; the channel layer is located on the surface, away from the substrate, of the tunneling dielectric layer, and the first orthographic projection of the channel layer on the substrate and the second orthographic projection of the floating gate layer on the substrate are at least partially overlapped; the channel layer is also provided with a source electrode and a drain electrode, and a channel region is formed between the source electrode and the drain electrode. The multifunctional floating gate transistor based on the two-dimensional material heterojunction can be used as a nonvolatile memory and has excellent storage capability.

The invention belongs to the field of electrode paste preparation, and provides low-temperature curing silver-coated copper paste for a heterojunction solar cell and a preparation method of the low-temperature curing silver-coated copper paste. Ethyl cellulose is adopted as a matrix material, a stable matrix network is provided for slurry through good cohesiveness and dispersity of ethyl cellulose, and a network structure with a high crosslinking degree is formed by adding modified phenolic resin, organic silicon modified epoxy acrylate and other chemical modification materials into the slurry. The mechanical strength and adhesive force of the slurry are further enhanced, surface modification is carried out on inorganic filler such as silver-coated copper powder and bismuth oxide through a silane coupling agent and a titanate coupling agent, and the interface bonding force between the filler and an organic matrix is enhanced through silicon-oxygen bonds formed on the surface of the filler; by adding the carboxylated polyamide wax and the organic bentonite, the agglomeration tendency of the filler is reduced by utilizing the adsorption and electrostatic repulsion effects of the carboxylated polyamide wax and the organic bentonite on filler particles, and the obtained conductive slurry has the characteristics of excellent conductivity and low-temperature rapid curing.

The invention provides a heterojunction solar cell and a preparation method thereof, and the method comprises the steps: sequentially arranging oxygen-containing crystalline silicon layers of a first conduction type on the surface, far away from a substrate, of a first passivation layer through employing a set deposition technology, wherein the oxygen atom doping concentration of the oxygen-containing crystalline silicon layers is gradually increased in the direction away from the substrate; on one hand, light oxygen doping is arranged at the interface of the first passivation layer, so that the dark attenuation phenomenon of a heterojunction cell is reduced, and the power off-shift problem of a photovoltaic module is further reduced; on the other hand, heavy oxygen doping is arranged on one side far away from the first passivation layer, so that the optical band gap and the short-circuit current of the crystalline silicon layer on the light receiving surface are effectively improved; and finally, oxygen-free doping is arranged at an interface adjacent to the transparent conducting layer, so that ohmic contact between the oxygen-containing crystal silicon layer and the transparent conducting layer is effectively reduced. Therefore, the comprehensive electrical performance of the heterojunction solar cell is effectively ensured and improved.

The invention provides a preparation method of a silicon substrate and a heterojunction solar cell, and the preparation method of the silicon substrate comprises the steps: an initial silicon substrate comprises a first surface and a second surface, a first mask layer is formed on the first surface, and a second mask layer is formed on the second surface; performing first dot matrix laser etching treatment on the first mask layer to form a first intermediate mask layer; the second surface is provided with a target area, the target area is used for arranging a grid line, and second dot matrix laser etching processing is carried out on the second mask layer corresponding to the target area to form a second middle mask layer; performing alkali etching treatment on the first surface through the first intermediate mask layer, and performing alkali etching treatment on the target area through the second intermediate mask layer; and removing the first intermediate mask layer to obtain a first suede, and removing the second intermediate mask layer to obtain the silicon substrate with the target area as the second suede. The silicon substrate with excellent adhesiveness between the second surface and the grid lines and ultralow reflectivity on the first surface is prepared by using the method.

The invention discloses a self-energy-supply multi-mode sensing electronic skin based on ionic gel heterojunction array integration and a preparation method and application of the self-energy-supply multi-mode sensing electronic skin. The electronic skin adopts a multi-layer composite structure design and comprises an electrode array layer, a silver paste connecting layer, a nano material doped ionic gel array layer and a pure ionic gel continuous layer, and passive self-energized work is realized through a space ion migration effect at a heterogeneous gel interface. The method is characterized in that the design of a multi-layer flexible composite structure is adopted, space-time coded light, temperature, pressure and humidity four-mode stimulation can be synchronously converted into electroneurographic signals, and a collaborative identification strategy of response intensity dynamic range and synaptic learning / delay time difference is utilized; and high-precision decoupling of the multi-source signals is realized in combination with a classification decision tree algorithm. The electronic skin has the characteristics of flexibility, deformation, environment self-repairing and bionic synapse, and geometrical characteristics of a reconfigurable target source are fused through time-space domain multi-modal data.

The invention provides a perovskite-crystalline silicon laminated cell, which comprises a heterogeneous crystalline silicon cell, a tunnel junction, a conductive layer, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer and a transparent electrode layer which are sequentially laminated, wherein the first carrier transport layer comprises a dendritic structure facing and extending into the perovskite light absorption layer, and the length of the dendritic structure is smaller than the thickness of the perovskite light absorption layer. According to the perovskite-crystalline silicon laminated cell provided by the invention, through the arrangement of the dendritic structure with a relatively good capillary effect in the first carrier transport layer, a high-quality perovskite absorption layer can be formed, so that the energy conversion efficiency of the perovskite-crystalline silicon laminated solar cell is greatly improved.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention relates to a non-noble metal-based self-supporting electrode, a preparation method thereof and application of the non-noble metal-based self-supporting electrode in efficient electrolyzed water. The self-supporting electrode comprises a non-noble metal substrate layer, and a transition layer and a catalytic activity layer which are sequentially arranged on the surface of the non-noble metal substrate layer, the transition layer comprises NiFe unit cell nano particles; the catalytic activity layer comprises CoFeLDH, and the CoFeLDH is of a cactus spherical structure formed by a nano needle-shaped array; and a heterojunction interface is arranged between the transition layer containing the NiFe unit cell nanoparticles and the catalytic activity layer containing the CoFeLDH. The catalyst has low oxygen evolution overpotential and has high current density and excellent stability under the working condition, the transition layer is constructed between the catalytic active layer and the foamed nickel substrate, interface contact between the catalytic active layer and the substrate can be optimized, more uniform stress distribution and better interface adhesion can be achieved, charge transfer and mass transfer are enhanced, and the catalytic activity of the catalyst is improved. Therefore, the electrode interface stability is realized.

The invention relates to a surface-modified lithium-rich manganese oxide material as well as a preparation method and application thereof, and belongs to the technical field of lithium ion battery positive electrode materials. The material comprises a layered lithium-rich manganese oxide substrate and layered spinel heterostructures uniformly distributed on the surface of the lithium-rich manganese oxide substrate, the spinel heterojunction is one or two of LiMn2O4 and Li4Mn5O12, and the thickness of the spinel heterojunction is 5 nm to 10 nm; the surface of the modified lithium-rich manganese oxide material also contains an oxygen vacancy structure. Benefited from the existence of the heterostructure and the oxygen vacancy structure, the material disclosed by the invention has relatively high capacity and rate capability; in the electrochemical cycle process, release of oxygen, interface side reaction and irreversible phase change of a layered phase, a spinel phase and a rock salt phase are all inhibited. The lithium ion battery assembled by using the material as a positive electrode has high first-circle coulombic efficiency, and the problem of capacity fading in circulation is also relieved.

The present application belongs to the field of solar cell preparation. Disclosed are a method for preparing a heterojunction solar cell, and a heterojunction solar cell. The method for preparing a heterojunction solar cell comprises: performing texturing treatment on an illuminated surface and an unilluminated surface of a semiconductor substrate, so as to respectively form a first textured structure and a second textured structure on the illuminated surface and the unilluminated surface; forming a mask layer on the first textured structure; performing wet chemical treatment on the second textured structure, and performing leveling treatment on at least part of a pyramid structure of the second textured structure, so as to obtain a refined micro-structure; removing the mask layer; forming a second intrinsic passivation layer on the refined micro-structure, and forming a first intrinsic passivation layer on the first textured structure; and forming a first-conductivity-type doped layer on the first intrinsic passivation layer, and forming a second-conductivity-type doped layer on the second intrinsic passivation layer. By means of the present application, the passivation effect can be improved, the coating process time for a back face of a battery is reduced, and a functional layer on the back face is thinned, thereby improving the battery performance.

The utility model discloses a hybrid passivation back contact cell. The cell comprises a silicon wafer; the heterostructure comprises a first passivation layer which is at least stacked on the first region and a first microcrystalline silicon layer which is fully or partially doped; the first electrode structure is located on the first microcrystalline silicon layer in the heterostructure; the first passivation structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are stacked on the second region; the second electrode structure is located on the doped polycrystalline silicon layer in the first passivation structure; the second passivation structure comprises a second passivation layer at least stacked on the first surface and a second microcrystalline silicon layer which is fully or partially doped, the crystallization rate of the second microcrystalline silicon layer is larger than that of the first microcrystalline silicon layer, and the doping type of the second microcrystalline silicon layer is opposite to that of the first microcrystalline silicon layer. According to the utility model, good passivation and tunneling contact performance can be realized, and the electrical performance and the photoelectric conversion efficiency of the cell are significantly improved.

The invention provides a two-dimensional heterojunction clean transfer technology based on a Van der Waals auxiliary layer. The specific method comprises the following steps: preparing micro-dome type PVC (PVC-MDP) on a glass slide, picking up an h-BN auxiliary layer by using the PVC-MDP, then picking up an h-BN / two-dimensional heterojunction by using the PVC-MDP, then releasing the h-BN / two-dimensional heterojunction to a target substrate, and finally removing the h-BN auxiliary layer. In the method, the direct contact between the polymer and the target heterojunction is avoided by introducing the h-BN auxiliary layer, so that the polymer pollution is avoided from the source, and the two-dimensional heterojunction transfer of the atomic-scale clean surface is realized.

The invention discloses a doped material based on a hexagonal boron nitride / titanium dioxide heterojunction and a preparation method thereof. According to the material, a heterojunction is formed by hexagonal boron nitride and titanium dioxide, and the light absorption performance, the carrier mobility and the photocatalytic efficiency are optimized by doping a nitrogen element, an iron element and a fluorine element; wherein the doped nitrogen element can reduce a band gap by introducing a defect energy level, and broaden a light absorption range to a visible light region and an infrared light region; the doped iron element can promote carrier separation by introducing an intermediate energy level; the doped fluorine element can inhibit carrier recombination by reducing surface defects. The light absorption efficiency of the material in the ultraviolet light range can be improved by constructing the layered # imgabs0 # heterojunction composite material, and the migration rate of electrons and holes can be improved by doping the N element, the Fe element and the F element in the # imgabs1 #, so that the oxidation-reduction reaction is promoted, and reference significance is provided for further improving the application effect of a photocatalyst in sewage treatment.