4395 results about "Heterojunction" patented technology

The invention provides a preparation method of laser cladding heterostructure stainless steel. According to the method, dried stainless steel pre-alloyed powder is subjected to laser melting deposition to form heterostructure stainless steel alloy with cross deposition of coarse grains and fine grains; the grain size of the fine crystal is 3-6 [mu] m, and the structure of the fine crystal layer is an equiaxed structure; the grain size of the coarse crystal is 20-50 [mu] m, and the structure of the coarse crystal layer is a columnar crystal formed along the Z axis. According to the method, the specific coarse grain / fine grain cross deposition heterostructure is presented in the stainless steel by changing the deposition layer process parameters and the scanning path, the material strength is improved while the material ductility is guaranteed, and the alloy has the excellent mechanical property.

The present disclosure provides an orbitronic device having orbital Hall effect or inverse orbital Hall effect, and method for enhancing the efficiency thereof. The orbital torque device comprises: a ferromagnetic / non-magnetic heterojunction formed by compounding a ferromagnetic layer and a non-magnetic layer as an orbital current source, wherein the ferromagnetic layer contains a ferromagnetic material, the non-magnetic layer contains a non-magnetic material with weak spin-orbit coupling, the non-magnetic layer is used as an orbital Hall channel to generate orbital current, and the orbital current enters the ferromagnetic layer, so that an orbital torque is generated through an orbital-spin conversion effect of the ferromagnetic layer to realize switching of a magnetic moment. The present disclosure can provide orbitronic device with low cost and good performance.

The invention provides antioxidant copper powder for low-temperature slurry, low-temperature sintered copper slurry and a preparation method of the low-temperature sintered copper slurry, and belongs to the technical field of slurry for heterojunction batteries. The antioxidant copper powder comprises copper powder and a coating agent coating the surface of the copper powder; wherein the coating agent comprises acrylic acid, oleic acid and paraformaldehyde. The anti-oxidation copper powder is formed by coating the surface of the copper powder with the coating agent formed by the acrylic acid, the oleic acid and the paraformaldehyde, and the low-temperature sintering copper paste formed by matching the anti-oxidation copper powder with other components can realize low-temperature sintering in air, does not need a protective atmosphere and has good conductivity.

The invention provides a multifunctional floating gate transistor based on a two-dimensional material heterojunction and a preparation method thereof, and relates to the technical field of semiconductors, and the multifunctional floating gate transistor comprises a substrate which comprises a back gate and a gate dielectric layer which are stacked from bottom to top; the floating gate layer is located on the surface, away from the back gate, of the gate dielectric layer; the tunneling dielectric layers are located on the surfaces, away from the back gate, of the floating gate layer and the gate dielectric layer respectively, and the floating gate layer is covered with the tunneling dielectric layers; the channel layer is located on the surface, away from the substrate, of the tunneling dielectric layer, and the first orthographic projection of the channel layer on the substrate and the second orthographic projection of the floating gate layer on the substrate are at least partially overlapped; the channel layer is also provided with a source electrode and a drain electrode, and a channel region is formed between the source electrode and the drain electrode. The multifunctional floating gate transistor based on the two-dimensional material heterojunction can be used as a nonvolatile memory and has excellent storage capability.

The invention discloses a self-energy-supply multi-mode sensing electronic skin based on ionic gel heterojunction array integration and a preparation method and application of the self-energy-supply multi-mode sensing electronic skin. The electronic skin adopts a multi-layer composite structure design and comprises an electrode array layer, a silver paste connecting layer, a nano material doped ionic gel array layer and a pure ionic gel continuous layer, and passive self-energized work is realized through a space ion migration effect at a heterogeneous gel interface. The method is characterized in that the design of a multi-layer flexible composite structure is adopted, space-time coded light, temperature, pressure and humidity four-mode stimulation can be synchronously converted into electroneurographic signals, and a collaborative identification strategy of response intensity dynamic range and synaptic learning / delay time difference is utilized; and high-precision decoupling of the multi-source signals is realized in combination with a classification decision tree algorithm. The electronic skin has the characteristics of flexibility, deformation, environment self-repairing and bionic synapse, and geometrical characteristics of a reconfigurable target source are fused through time-space domain multi-modal data.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention provides a modified lithium-rich manganese-based positive electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of new energy. According to the modified lithium-rich manganese-based positive electrode material disclosed by the invention, multi-element point position doping is carried out on a base material to enhance the structural stability of a polycrystalline material, inhibit transition metal ion migration and interlayer dislocation, improve the internal lattice strength and manufacture a stable base material core; the heterostructure layer can greatly improve the surface structure phase change and transition metal dissolution of the material surface under high voltage, the stability of the surface of the matrix material is improved, and the rate capability of the material can be improved by the in-situ generated three-dimensional ion channel; the coating layer can effectively reduce side reaction of a solid-liquid interface, improve dissolution of metal ions on the surface and improve the cycle performance of the material; in a word, the internal structure and the surface of the material are effectively modified mainly through three means of doping, interface structure design and coating, the multiplying power of the material can be greatly improved, and the long-term service life of the material can be greatly prolonged.

The invention relates to the technical field of sensors, in particular to a high-sensitivity pressure-temperature dual-mode sensor and a preparation method thereof.The preparation method comprises the steps that a carbon nano tube is subjected to acid treatment and then reacts with a silane coupling agent KH550, and an aminated carbon nano tube is prepared; the method comprises the following steps: carrying out hydrothermal reaction on a phosphorus source and a graphene oxide aqueous solution to prepare phosphorus-doped reduced graphene oxide; the preparation method comprises the following steps: synthesizing Au-Ag heterojunction nano dispersion liquid through an Au nano seed method; mixing the three components and carrying out ultrasonic treatment to obtain mixed dispersion liquid; the preparation method comprises the following steps: modifying a PDMS substrate with KH560 and polyethylene glycol diamine to prepare a modified PDMS substrate; and coating the mixed dispersion liquid on a modified substrate to form a sensitive layer, and preparing an electrode to obtain the sensor. The aminated carbon nanotubes and the phosphorus-doped reduced graphene oxide construct a three-dimensional conductive network, so that high-sensitivity pressure detection is realized; the phosphorus-doped reduced graphene oxide and the Au-Ag heterojunction form a Schottky barrier, so that stable temperature sensing is realized; and the modified PDMS and the sensitive layer are strongly combined to improve the mechanical durability.

The invention discloses a process for synthesizing ammonia by coupling low-temperature plasma with electro-catalysis in the field of clean energy and green chemical industry, which comprises the following specific steps: mixing air and water vapor, feeding the mixture into a dielectric barrier discharge reactor, filling the reactor with a multi-stage heterojunction gradient doped carbon coated catalyst, generating active gas containing NOx under pulse high voltage, and condensing and then entering an electrocatalytic reduction unit. And an electro-catalysis product enters a photo-thermal separation module integrated with a Janus type photo-thermal electrode, the temperature of the electrode is locally increased under visible light irradiation, NH3 desorption is promoted, and finally high-purity ammonia is obtained through polyimide membrane separation. The multistage heterojunction gradient-doped carbon-coated catalyst adopted in the process is prepared through multiple steps and contains gradient-doped boron, sulfur and Au nanoparticles on the surface, NOx adsorption, electron transport and sintering resistance are synergistically improved, and efficient ammonia synthesis under mild conditions is achieved.

The invention discloses a plasma surface activation pre-bonding-femtosecond laser connection integrated process, belongs to the technical field of advanced dissimilar material precision connection, and particularly relates to a multi-material interface efficient connection method based on plasma surface activation pre-bonding and femtosecond laser processing. The method is suitable for high-strength and low-thermal-damage heterogeneous bonding of transparent materials (such as glass, quartz and sapphire) and transparent materials or metal materials (such as titanium alloy, stainless steel and invar alloy). According to the method, interface atomic-scale cleaning and chemical activity regulation and control are achieved through plasma activation, interface connection of the two materials is induced by combining the femtosecond laser ultrafast nonlinear effect, and the bottlenecks that in a traditional connection technology, optical contact depends on a mechanical clamp, and heat input is uncontrollable are broken through; and an innovative solution is provided for cross-material interface functional manufacturing in the fields of photoelectric device packaging, optical-electronic integrated systems and the like.

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

The invention relates to the technical field of water electrolysis hydrogen production, in particular to a self-supporting hollow carbon membrane electrode and a preparation method and application thereof.The preparation method comprises the following steps that a self-supporting hollow carbon nanofiber membrane with metal M and metal M compound heterojunction is prepared through a coaxial electrostatic spinning technology; the self-supporting electrode with a high specific surface area and a rapid mass transfer channel is formed by regulating and controlling the flow rate of the spinning solution of the outer layer and the inner layer and a high-temperature carbonization process, the metal M is selected from one of iron, cobalt, nickel, manganese and molybdenum, and the metal M compound is one of oxide, hydroxide, carbide, nitride, phosphide and chalcogenide. Compared with the prior art, the self-supporting hollow carbon membrane electrode disclosed by the invention has good mechanical stability, good hydrophilic and hydrophobic properties and excellent HER and OER bifunctional catalytic activity, and can be used for efficiently and completely decomposing water.

The invention relates to a heterojunction composite material and a preparation method and application thereof, and belongs to the technical field of catalysts. The preparation method of the heterojunction composite material comprises the following steps: dispersing nano cadmium sulfide in water to obtain a nano cadmium sulfide dispersion liquid, then adding a triazinyl covalent organic framework, fully reacting at 75-85 DEG C, centrifuging, precipitating, washing and drying to obtain the heterojunction composite material. The narrow-band-gap semiconductor cadmium sulfide and the wide-band-gap semiconductor triazinyl covalent organic framework are compounded to form the heterojunction structure composite material photocatalyst, and the narrow-band-gap semiconductor cadmium sulfide and the wide-band-gap semiconductor triazinyl covalent organic framework interact with each other, so that the response range of sunlight is widened, separation and transfer of photo-induced electrons and holes are promoted, and the photoelectric conversion efficiency is improved. Therefore, the photocatalytic oxidation-reduction capacity of the catalyst is improved, and the photocatalytic performance of the catalyst is finally improved. The heterojunction composite material can be applied to the field of cleaning and environmental protection as a photocatalyst, and has excellent hydrogen production efficiency.

The invention provides a Cu2O-based heterogeneous composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: coating the surface of a Cu2O hollow sphere substrate with a carbon layer, and depositing layered double hydroxides (LDHs) and metal palladium (Pd) nanoparticles on the carbon layer. According to the material, through a Cu2O-carbon layer-LDHs-Pd multistage heterostructure design, space optimization of light absorption, charge transfer and catalytic sites is realized; cu2O-carbon layer-LDHs interface coupling promotes directed migration of photo-induced electron-hole pairs, and the surface plasmon resonance effect of Pd nanoparticles enhances the charge separation efficiency; the LDHs optimizes a charge transfer path through surface oxygen vacancy or metal valence cycle, so that synergistic oxidation of non-free radicals and free radicals is realized, the organic matter degradation efficiency is remarkably improved, the oxidation path is widened, and the performance bottleneck of a single material is broken through.

The invention belongs to the technical field of immunoassay and biosensing, and provides a novel construction mode of a heterojunction dual-photoelectrode photoelectric sensing strategy and a preparation method of an in-situ heterojunction MIO photocathode. The invention relates to a preparation method of a heterojunction dual-photoelectrode type photoelectrochemical sensor based on multi-ball cascade DNA reaction amplification. Specifically, the design is composed of an In2O3 / CdS photoanode and an in-situ formed MIL-68 / In2O3 (MIO) photocathode. The heterojunction dual-photoelectrode sensing strategy effectively prolongs an electron-hole transmission path, enhances photo-generated charge separation, and realizes' super-open 'PEC signal output, thereby providing a steady baseline for signal conversion. Meanwhile, a multi-sphere cascade DNA reaction is combined to output a three-dimensional DNA net structure to provide a large number of sites for embedding of a PEC quenching probe doxorubicin-ferrocene carboxylic acid (DOX-FcCOOH), obvious PEC signal quenching is realized by utilizing the efficient competitive electron transfer capability of the three-dimensional DNA net structure, and finally, a signal conversion system with'opening-super opening-closing 'multistage response characteristics is constructed. The detection of the nucleic acid marker Pax-5a gene of the B cell acute lymphatic leukemia is realized by detecting target objects with different concentrations.

The invention belongs to the field of heterojunction cells, and particularly discloses a heterojunction cell and a preparation method thereof, which are characterized in that heavily doped amorphous silicon is deposited in a corresponding area of a grid line electrode, so that high parasitic absorption, surface dangling bond and interface state density are reduced, and the open voltage and the efficiency of the heterojunction cell are improved. The main technical scheme of the invention is as follows: according to the heterojunction cell, grooves are formed in corresponding areas of grid line electrodes on the front surface and the back surface of an N-type silicon substrate; arranging an intrinsic amorphous silicon layer; the light doping P-type amorphous silicon layer is arranged on the front intrinsic amorphous silicon layer, the light doping N-type amorphous silicon layer is arranged on the back intrinsic amorphous silicon layer, the heavy doping P-type amorphous silicon layer is arranged in a groove corresponding area on the light doping P-type amorphous silicon layer, the heavy doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer, and the light doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer. The P-type doped amorphous silicon layer and the N-type doped amorphous silicon layer are respectively provided with a transparent conductive oxide layer, and the grid line electrodes are arranged on the transparent conductive oxide layers. The invention is mainly used for power generation.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

The present disclosure provides a low-temperature conductive paste and a raw material composition thereof, and a heterojunction cell electrode and a manufacturing method therefor. The raw material composition comprises the following components in percentage by mass: 2%-10% of a composite resin, 2%-4% of an organic solvent, 0.2%-1% of an auxiliary agent, and 85%-94% of conductive metal powder. The resin comprises a component A and a component B. The component A comprises a polyol and a blocked isocyanate. The component B comprises a curing agent and a resin. The present disclosure further provides a low-temperature conductive paste prepared from the raw material composition, a heterojunction cell electrode manufactured from the low-temperature conductive paste, a manufacturing method for the electrode, and a heterojunction cell manufactured from the electrode. The low-temperature conductive paste and the heterojunction cell electrode provided by the present disclosure have high conductivity and weather resistance.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.

The invention discloses an N-surface GaN / AlGaN heterojunction transverse JTE diode, and belongs to the technical field of semiconductors, and the diode comprises an epitaxial structure which at least comprises an N-surface unintentionally doped GaN channel layer; the P-type JTE layer, the anode and the cathode are positioned on the surface of the N-surface unintentionally doped GaN channel layer; wherein the anode and the P-type JTE layer are located in an anode region, the P-type JTE layer comprises a first sub-part and a second sub-part which are arranged at an interval, the anode metal layer covers part of the first sub-part, part of the second sub-part and a channel region between the two sub-parts, and the orthographic projection of the cathode in the first direction is annular; the first direction is a direction perpendicular to a plane where the epitaxial structure is located; and the passivation layer covers the surface of the N-surface unintentionally doped GaN channel layer and part of the cathode. By introducing the P-type JTE layer, the equivalent Schottky barrier height of the anode is remarkably improved, and reverse electric leakage is effectively reduced.

The invention provides a preparation method of a high-temperature wear-resistant high-entropy alloy layer with a heterostructure, and belongs to the technical field of metal materials and surface engineering thereof. According to the method, a CoCrFeNiTi high-entropy alloy cladding layer is deposited on the surface of a base body through the laser cladding technology, and the thickness of the cladding layer is controlled to be 0.5-2 mm. The component of the cladding layer is CoCrFeNiTi, the atomic ratio content of Ti is controlled not to exceed 8%, so that the structure of the cladding layer is an FCC phase, and cracking of the cladding layer induced by precipitation of a BCC phase is avoided. A high-entropy alloy cladding layer is heated to 550-950 DEG C and subjected to heat preservation for 2-4 h for annealing treatment, alloy elements in the cladding layer are promoted to be separated out, and small heterogeneous strengthening phases such as a Ni3Ti phase and a laves phase are generated in situ. According to the method, a heterogeneous strengthening structure is formed under the condition of not adding exogenous elements, the strength and hardness and high-temperature wear resistance of the cladding layer are greatly enhanced, the method has the advantages of being simple in process, low in cost, high in applicability and the like, and an effective technical scheme is provided for repairing and remanufacturing of the high-entropy alloy.

The invention discloses a scanning point imaging encryption transmission method based on a GaN heterojunction device, and belongs to the technical field of semiconductor photoelectronics. According to the method, the same device is switched between a high-speed'detection mode 'and a'synaptic mode' with a memory effect, encryption is realized by utilizing response difference of the device in two working modes, and an encryption key of the device is an analog and time-varying bias protocol instead of a simple digital sequence. The characteristics of the physical unclonable function endow the physical unclonable function with extremely high encryption strength, so that the physical unclonable function is difficult to crack by a conventional algorithm and has higher security.

The invention relates to a reworking method of a heterojunction solar cell. The reworking method comprises the following steps that defective products are pretreated, and dirt on the surfaces of the defective products is removed; forming a P-type doping layer on the surface, with the N-type doping layer, of the pre-treated defective product to obtain an intermediate product; and carrying out film removal treatment on the intermediate product, and removing a film layer on the surface of the intermediate product to obtain the silicon substrate. In the reworking method, the P-type doping layer is formed on the N surface of the defective product, and the P-type doping layer can play a role in protecting the N-type doping layer. In the subsequent film removing treatment, the excessive corrosion of the N surface can be reduced, so that the corrosion degrees of the P surface and the N surface in the film removing process can be close, the risk of excessive corrosion of the silicon substrate can be reduced on the basis of removing a bad film layer, the silicon substrate can be kept at a proper thickness for reutilization, and the reworking yield of the silicon substrate is further improved.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The invention provides a multiband photoresponse nerve synapse device based on a two-dimensional and organic heterostructure, an array and application, and belongs to the technical field of organic electric solid-state devices. The device provided by the invention adopts a three-end bottom gate top contact structure and comprises a gate substrate, an insulating layer, a channel layer and a source / drain electrode, and the channel layer forms an II-type heterojunction by a two-dimensional semiconductor material with a narrow-band gap characteristic and an organic semiconductor material. The heterostructure realizes ultraviolet to far infrared (365nm-10 [mu] m) multiband photoelectric response, and shows synaptic plasticity under light pulse modulation, including short-term enhancement, long-term enhancement and learning-forgetting-re-learning characteristics. Large-area array preparation of the device can be realized through methods such as chemical vapor deposition, solution spin coating, jet printing or layer-by-layer self-assembly. The technology not only can be used for brain-like learning and memory simulation, but also can be applied to the fields of sensing and memory integrated intelligent systems, optical neural networks, artificial vision, multi-mode intelligent sensing and the like.

The invention relates to a catalyst for the hydrogen evolution reaction (HER) and methods for using the catalyst in a water-splitting process. A hydrogen evolution reaction (HER) electrocatalyst, and a method and use for preparing a HER electrocatalyst are disclosed. The method comprises the step of forming a two-dimensional electron gas (2DEG) interface at a heterojunction of at least one of two or more alternating layers of a first complex oxide and a second complex oxide, wherein the or each 2DEG interface exhibits a current density, corresponding to an intrinsic hydrogen evolution reaction (HER) activity that renders the 2DEG interface(s) suitable as an HER electrocatalyst for producing hydrogen (H2) from a water-based electrolyte by water electrolysis.

The invention discloses a heterojunction AgI / MIL-53 (Fe, Co) composite polyethersulfone membrane and a preparation method and application thereof. The heterojunction AgI / MIL-53 (Fe, Co) composite polyethersulfone membrane is composed of a polyethersulfone membrane, AgI modified MIL-53 (Fe, Co) nano particles loaded on the polyethersulfone membrane and a polyamide nano layer. Preparing by adopting a particle adding mode of vacuum filtration and interfacial polymerization modification; the mold material is good in permeability, high in mechanical strength and excellent in pollution resistance.

The invention belongs to the technical field of lithium ion battery positive electrode material preparation, and relates to a manganese-based positive electrode of an all-solid-state battery system, a preparation method and application of the manganese-based positive electrode, the general formula of the manganese-based positive electrode is Li < 1 + x > NiyCoyMn3yOz, the preparation method comprises the following steps: S1, grinding and mixing a lithium-rich manganese original material and lithium phosphate in an inert gas protective atmosphere to obtain a precursor mixture; s2, performing high-energy mechanical ball milling on the precursor mixture; s3, collecting the powder subjected to high-energy mechanical ball milling in an inert gas protective atmosphere to obtain a manganese-based positive electrode material; the manganese-based positive electrode material disclosed by the invention realizes mixed arrangement of part of cations and a double-phase synergistic heterostructure, and has high energy density and voltage, and a halide and sulfide-based all-solid-state battery assembled by using the manganese-based positive electrode material shows good cycling stability and rate capability.

The present invention relates to an open-gate AlGaN / GaN heterojunction field-effect transistor with an auxiliary gate structure and its application, belonging to the field of microelectronic research technology. Compared with conventional open-gate AlGaN / GaN heterojunction field-effect transistors, the present invention introduces a non-open auxiliary gate structure, effectively improving the saturation characteristics of open-gate devices. The auxiliary gate is located between the drain of the device and the open main gate. Its purpose is to fix the surface potential of the region in which it is located, so that the current saturation of the open-gate device is freed from dependence on the surface virtual gate, thereby improving the saturation characteristics of the device and making it more stable and controllable. By applying different potentials to the main gate and the auxiliary gate, different device operating modes can be obtained, which makes the application of the present invention in circuits more flexible and more suitable for the increasingly complex field of integrated circuits.