10 results about "Critical thickness" patented technology

This invention discloses a method for defining the critical thickness of a protective layer based on a three-dimensional strain field (DVC) and a variable-thickness specimen. The method includes the following steps: preparing a composite specimen with an internal uniform cross-section matrix and an external gradient-thickness protective layer; extracting the three-dimensional strain field and microcrack damage evolution characteristics within the specimen using in-situ CT loading and digital volume correlation (DVC); introducing an interface synergy discrimination algorithm and a cross-sectional Poisson's ratio spatial inhomogeneity index; and applying targeted definition criteria for different protective mechanisms to obtain the critical effective thickness. This invention requires only a single specimen to achieve continuous targeted definition of the critical effective thickness of the protective layer, significantly reducing testing costs and providing scientific and quantitative theoretical support for the selection of protective materials in complex engineering environments.

The invention discloses a demonstration device for heat transfer process visualization teaching, and relates to the technical field of heat transfer experiment instruments. The adjusting assembly is assembled on the inner wall of the base and used for adjusting the thickness of the heat insulation layer; the locking assembly is assembled on one side of the adjusting assembly and used for locking and supporting the heating element; according to the demonstration device for heat transfer process visualization teaching, the thickness of a heat insulation layer can be rapidly adjusted through the adjusting assembly according to experiment requirements, different heat insulation conditions can be conveniently simulated, meanwhile, continuous and stepless thickness adjustment is conducted on the same material, students can personally draw a heat insulation effect and thickness change curve, and the teaching efficiency is improved. And the critical thickness is explored, the nonlinear relationship is understood, and quantitative and research-based teaching is realized.

The invention relates to the technical field of optoelectronic materials, in particular to a quantum well material with the light-emitting wavelength of 1178nm and a preparation method of the quantum well material. Comprising the following steps: growing a gallium-arsenic-phosphorus (GaAsP) strain compensation barrier layer on a substrate; growing a GaAs spacer layer on the strain compensation barrier layer; growing a high In component (35-40%) InGaAs quantum well layer on the spacing layer by adopting a low-temperature process; growing a GaAs spacer layer on the quantum well layer; growing a GaAsP strain compensation barrier layer on the spacing layer; the process is repeated to complete the growth of the multi-quantum well luminescent material. The method has the advantages that the stress accumulation of the InGaAs quantum well material is reduced; mutual mixing of atoms between the barrier layer and the quantum well layer is avoided; by reducing the growth temperature and reducing the migration rate of atoms on an epitaxial surface, the critical thickness of the InGaAs multi-quantum well material is improved, the dislocation defect density is greatly reduced, and the growth quality of the InGaAs multi-quantum well material is remarkably improved.

The application relates to the technical field of heat dissipation materials, and discloses a precision die cutting and detection method for a heat dissipation material, which comprises the following steps: S1, digital modeling of material microstructure and mechanical properties: sampling the incoming material batch, observing the multilayer stacking structure of the material batch by using a scanning electron microscope, measuring the approximate value of the interlayer binding energy, and obtaining the elastic modulus, yield strength and brittle-ductile transition critical thickness in different directions by using a nanoindenter and a micro tensile testing machine; the four core strategies of material digitization, process self-adaptation, process active control and detection intelligentization are used in the application scheme, so that the precision die cutting of graphite sheets is changed from needing the processing experience of workers to a predictable and optimized precision manufacturing engineering driven by a system, and the application scheme is particularly suitable for the fields of 5G equipment, ultra-thin consumer electronics, high-reliability power devices and the like which have extremely high requirements for heat dissipation components.

This invention discloses a method, computer equipment, and storage medium for calculating the critical thickness of the rock mass for preventing tunnel bursts when crossing inclined discontinuous geological bodies under construction disturbance. It acquires parameters of the tunnel, rock mass, and support structure, as well as information on the discontinuous geological bodies the tunnel will cross; quantifies the impact of stress release on the mechanical equilibrium of the rock mass for preventing bursts; and determines the stress release rate of the surrounding rock relative to the excavation distance. x The relationship; by constructing a numerical model, the distance from the tunnel face to the target section is obtained. S t The stress relief coefficient curve is used as the independent variable, and the fitting parameter values ​​are determined to obtain different excavation distances. x The stress release coefficient is determined; a thin-layer unit model of the discontinuous geological body is constructed, and the expressions for the vertical and horizontal stresses of the surrounding rock of the discontinuous geological body are obtained; the critical thickness of the anti-outburst rock block is calculated based on mechanical equilibrium. This enables dynamic quantification of construction disturbance effects, dynamically responding to changes in the spatial location of the discontinuous geological body, and improving adaptability to complex geological conditions and the accuracy of early warning for sudden water inrush disasters.

The application discloses a kind of construction methods of multi-section combined mining horizontal pillar critical thickness optimization calculation model, belong to mining process technical field.The method is analyzed by the mechanical state where horizontal pillar is located, based on Mindlin medium thick plate theory, under the boundary condition of four edges fixed support, under the action of multi-stress field of upper uniform load, self gravity, two-way horizontal stress, the bottom surface is in the state of open space, the mechanical model of horizontal pillar;Finite fourier integral transformation method is used to solve and analyze the mechanical model of horizontal pillar, the internal force distribution law of horizontal pillar is obtained, based on maximum tensile stress criterion, the critical thickness optimization model of horizontal pillar is constructed, the mechanical action of horizontal pillar is clarified, the critical thickness optimization model of horizontal pillar constructed has important theoretical research significance and higher popularization and application value for accurately determining the critical thickness of horizontal pillar in mine, ensure the safety of multi-section combined mining.

The invention belongs to the technical field of oil and gas production in an oil field, and relates to a water saturation calculation method, system and equipment of a low-resistance oil layer and a medium. The method comprises the following steps: acquiring formation water resistivity, porosity, rock electricity parameters and capillary parameters of a reservoir in a region; determining the critical thickness of the water film based on the constructed function relationship between the resistivity increasing coefficient and the thickness of the water film and capillary parameters; obtaining a quantitative relation between the water saturation and the resistivity increase coefficient suitable for the region by combining the critical thickness of the water film and the capillary parameters, fitting the quantitative relation to obtain a fitting parameter, and determining a relational expression between the resistivity increase coefficient and the water saturation; and calculating the water saturation of the low-resistivity oil layer based on the obtained formation water resistivity, porosity and rock electricity parameters and the determined relation between the resistivity increasing rate and the water saturation. The calculation method disclosed by the invention can be used for calculating the saturation of the low-resistance oil layer with high irreducible water, so that productivity development is optimized.

The application discloses a three-dimensional spiral magnetic field assisted laser chemical vapor phase system and application thereof, wherein a gas inlet system of the laser chemical vapor deposition system is designed as a spiral pipeline and an external magnetic field is additionally arranged to realize uniform mixing of molecules of each precursor gas, improve a dissociation rate of the precursor and increase utilization efficiency of the precursor; a three-dimensional spiral magnetic field is additionally arranged in a film deposition area, a deposition path of a gas phase reactant is controlled by using the three-dimensional spiral gradient magnetic field, directional arrangement of a film is induced, under the synergistic action of the magnetic field and a laser heat field, film uniformity is optimized in the process of high-speed film forming, and crystallinity and preferred orientation of the film are improved. By using Zr element doped GdBCO high-temperature superconducting film, the external magnetic field can promote the internal film to form ordered arrangement nanoscale non-superconducting phases, increase effective artificial pinning centers in the GdBCO high-temperature superconducting film, strengthen a magnetic flux pinning effect, improve critical current density and critical thickness of the GdBCO high-temperature superconducting film, and enhance current carrying capacity, so that superconducting performance of the film is enhanced.

This invention belongs to the field of amorphous soft magnetic materials technology, specifically disclosing a high-performance Fe-Si-B-Y iron-based amorphous alloy thin strip based on trace yttrium addition, its preparation method, and applications. The alloy is based on the Fe-Si-B system, with a Fe mass fraction as high as 95% in its chemical composition, and contains 0.1%~0.5% trace rare earth element Y to partially replace the metalloid element B. This invention innovatively utilizes trace Y as a "melt purifier," removing impurities such as oxygen and sulfur from the melt through in-situ reaction, eliminating the core for α-Fe heterogeneous nucleation induced on the free surface of the thin strip during rapid quenching; simultaneously, it utilizes the atomic size effect to enhance the topological disorder of the melt. Combined with conventional industrial production conditions of 38-48 m / s, this method successfully increases the critical thickness of the limiting iron content amorphous alloy from approximately 20 μm to over 25 μm, and significantly optimizes the soft magnetic properties (Bs≥1.68T, Hc≤4.0 A / m). Furthermore, it allows the use of industrial-grade raw materials, possessing significant cost advantages and industrialization value.

This invention relates to the field of copper busbar design and manufacturing technology, and particularly to a method and apparatus for evaluating and selecting the current carrying capacity of copper busbars. The method includes the following steps: obtaining demand constraints, determining candidate specifications, identifying thermal resistance status, evaluating actual current carrying capacity, and providing output selection recommendations. This invention achieves accurate nonlinear evaluation of the current carrying capacity of thick copper busbars and scientific selection under limited installation space conditions by obtaining the expected current carrying capacity requirement and installation space constraints of the target electrical circuit, determining the geometric parameters of candidate copper busbars, comparing the copper busbar thickness with a critical thickness threshold determined based on the coupling relationship between internal thermal resistance and heat dissipation surface area, constructing and solving a current carrying capacity evaluation equation based on the principle of thermal balance and boundary layer theory, and comparing the actual current carrying capacity evaluation value with the expected current carrying capacity requirement value to generate selection recommendations. This solves the defect in existing technologies where the current carrying capacity of copper busbars is approximated as a linear proportional relationship with the cross-sectional area, leading to inaccurate evaluation of thick copper busbars.