122results about How to "Sufficient reliability" patented technology

A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.

Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

The authentication capability of a portable terminal connected to a playback device is used to perform user authentication, thereby providing content with a sufficient reliability while only requiring a simple mechanism.

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

A storage device control apparatus includes a channel control unit for outputting an I / O request for a storage device, having a CPU for receiving a data input / output request in a file unit, an I / O processor for outputting the I / O request corresponding to the data input / output request in the file unit in response to an instruction from the CPU, and a memory system for temporarily storing information required for a file access process of the CPU. The memory system includes a plurality of memory modules and a memory controller for controlling memory access to the plurality of memory modules, a command, an address and data being serially transmitted from the memory controller to each of the memory modules. Each of the memory modules has a plurality of memory elements and a plurality of buffer units. The memory controller and the memory system are connected by duplicated serial interfaces.

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.

The invention discloses a method for displaying the residual battery electricity quantity of a mobile terminal, which comprises the steps of detecting the electricity quantity, comparing the electricity quantity and updating and displaying an electricity-quantity value, wherein the electricity quantity is continuously detected, and when the currently-calculated residual battery electricity-quantity value is continuously greater than or smaller than the currently-displayed electricity-quantity value for certain times, the currently-displayed electricity-quantity value is then updated. In the invention, by utilizing two charging and standby voltage-electricity-quantity curves and combining the comparison of the currently-calculated electricity-quantity value with the currently-displayed electricity-quantity value for many times, the currently-displayed electricity-quantity value is updated step by step, the problem of electricity-quantity jumping is solved, and the electricity quantity can be accurately displayed.

A multilayer ceramic electronic device includes a laminated body having alternately laminated internal electrode layers and dielectric layers. The dielectric layer has a thickness of 0.5 μm or less. The internal electrode layers contain ceramic particles. A content ratio of the ceramic particles contained in the internal electrode layer is 2 to 15% by representation of cross sectional area.

Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

A storage device control apparatus including first and second systematic memory module groups, each of which is composed of a plurality of memory modules, a memory controller for controlling memory access to the memory modules belonging to each of the first systematic and second systematic memory module groups. When the memory controller detects failure in one of the other memory systems, the memory system performs memory access to the memory modules belonging to its own systematic memory module groups.

In a work vehicle, an engine compartment is disposed forwards of a cab. An exhaust gas treatment device is disposed over an engine in the engine compartment. A radiator is disposed forwards of the exhaust gas treatment device (33) in the engine compartment. A blower is configured to generate an airflow passing through the radiator from back to front of the radiator. The exhaust gas treatment device is slanted with respect to a vehicle width direction for increasing a distance between the exhaust gas treatment device and the radiator towards a first lateral face portion. Further, the first lateral face portion includes air inlets facing a space between the exhaust gas treatment device and the radiator.

A semiconductor apparatus includes a first wiring substrate, a second wiring substrate, a semiconductor chip, an adhesive layer and a molding resin. The second wiring substrate is stacked and connected on the first wiring substrate through a bump electrode. The semiconductor chip is mounted on the first wiring substrate by flip chip bonding and received between the first wiring substrate and the second wiring substrate. An upper surface of the semiconductor chip is subject to a mirror treatment. The adhesive layer is formed on the upper surface of the semiconductor chip. The molding resin is filled in a gap between the first wiring substrate and the second wiring substrate.

Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

The invention relates to a method for testing the mechanical of the steel plate on line when rolling, providing a comprehensiveness on-line predicting method based on the physico-metallurgy model and combined with the database, information technology through setting up a corresponding model of microscopic structure, finished size, art component to the mechanical. The method including the following steps: (a) selecting and confirming the parameter of the model; (b) setting up the real-time traffic to the processing machine, calling the art parameter and alloying component dynamic data from the processing database; (c) predicting the ferrite grain size and temperature (d) predicting mechanical of the finished plate. The invention is used specially for low-carbon steel and mini alloyed steel, the adaptive process is heavy and medium plate mill or big mill and finisher in rolling process.

Printed circuit boards have circuit layers with one or more via filled holes with copper wraps and methods of manufacturing the same. An embodiment of the present invention provides a method to enhance the consistency of the wraparound plating of through-hole vias of printed circuit boards with (requiring) via filling to provide extra reliability to the printed circuit boards and enables the designers and / or manufacturers of printed circuit boards to design and manufacture boards with relatively fine features and / or tight geometries.

In a work vehicle, an engine compartment is disposed forwards of a cab. An exhaust gas treatment device is disposed over an engine in the engine compartment. A radiator is disposed forwards of the exhaust gas treatment device (33) in the engine compartment. A blower is configured to generate an airflow passing through the radiator from back to front of the radiator. The exhaust gas treatment device is slanted with respect to a vehicle width direction for increasing a distance between the exhaust gas treatment device and the radiator towards a first lateral face portion. Further, the first lateral face portion includes air inlets facing a space between the exhaust gas treatment device and the radiator.

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

A silver-plated metal member region on which a light emitting element is disposed, an extraction electrode having a copper plate pattern, and a convex resin portion separating the metal member region into a plurality of sections are provided on the bottom surface of a concave portion in a package of a semiconductor light emitting device. A covering resin is partially formed on the metal member region and a sealing resin is placed to cover the metal member region, the covering resin and the convex resin portion. According to this configuration, the area of contact is decreased between the sealing resin and the metal member region having the light emitting element placed thereon, to thereby prevent the light emitting element from falling off and being displaced from the metal member region, with the result that a semiconductor light emitting device of high reliability can be provided.

The invention discloses a rotating device, comprising a main body; a rolling bearing attached to the main body, the rolling bearing comprising an inner ring, an outer ring and a cage for rollingly holding rolling members; a ring magnet with multi-pole magnetization; a back a back yoke forming member; a magnetic sensor located on said body. The ring magnet and the back yoke forming member are integrally provided on the holder and opposed to the magnetic sensor with a predetermined distance.

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

An image processing apparatus for correcting red eye phenomenon in photographic image data. This apparatus includes a skin color pixel detecting portion for detecting a skin color pixel in the image data based on a predetermined skin color detection condition, a white color pixel detecting portion for detecting a white color pixel in the image data based on a predetermined white color detection condition, a red color pixel detecting portion for detecting a red color pixel in the image data based on a predetermined red color detection condition, a red eye pixel determining section for setting the detected red color pixel as a red eye pixel candidate and then determining the red eye pixel candidate as a red eye pixel according to a determination condition using the number of the skin color pixels and the number of the white color pixels detected respectively within an area around the red eye pixel candidate and a red eye correcting section for correcting the red eye phenomenon by changing a pixel value of the determined red eye pixel.

A spark plug 100, comprising a center electrode 3 which is extended in an axial direction, a cylindrical insulator 2 which holds the center electrode 3, and a cylindrical main metal fitting 1 which has a ground electrode 10 at a tip end portion and a tool engagement portion 8 for mounting on an engine, wherein the main metal fitting 1 has a part of a rear end side from the tool engagement portion 8 as a metal fitting-side fitting portion 9 and holds the insulator 2 in a tightly fitted state in a radial direction by the metal fitting-side fitting portion 9.

Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula (Bai-αMα)A(Ti1-βMnβ)BO3 and having hexagonal structure wherein an effective ionic radius of 12-coordinated “M” is −20% or more to +20% or less with respect to an effective ionic radius of 12-coordinated Ba2+ and the A, B, α and β satisfy relations of 0.900≦(A / B)≦1.040, 0.003≦α≦0.05, 0.03≦β≦0.2, and as subcomponents, with respect to the main component, certain contents of alkaline earth oxide such as MgO and the like, Mn3O4 and / or Cr2O3, CuO, Al2O3, rare earth element oxide and glass component including SiO2. According to the present invention, it can be provided the hexagonal type barium titanate powder and dielectric ceramic composition which are preferable for producing electronic components such as a capacitor and the like showing high specific permittivity, having advantageous insulation property and sufficient reliability.

A multiple trip point fuse latch device and method is disclosed. Multiple read inputs to a fuse latch enable the altering of the resistive trip point of the fuse latch. A multiple trip point fuse latch may be combined with a slave latch to form a master-slave flip-flop, and multiple master-slave flip-flops may be connected in series to form a shift register. Changing the trip point permits the use of a test procedure that may analyze the margins of a fuse latch during the fuse read operation.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula of (Ba1-αMα)A(Ti1-βMnβ)BO3 and having hexagonal structure wherein an effective ionic radius of 12-coordinated “M” is −20% or more to +20% or less with respect to an effective ionic radius of 12-coordinated Ba2+ and the A, B, α and β satisfy relations of 1.000<(A / B)≦1.040, 0≦α<0.003, 0.03≦β≦0.2, and as subcomponents, with respect to the main component, certain contents of alkaline earth oxide such as MgO and the like, Mn3O4 and / or Cr2O3, and CuO and Al2O3 and rare earth element oxide and glass component including SiO2. According to the present invention, it can be provided the hexagonal type barium titanate powder and the dielectric ceramic composition which are preferable for producing electronic components such as a capacitor and the like showing comparatively high specific permittivity, having advantageous insulation property and having sufficient reliability.