589results about How to "Suppress Diffuse" patented technology

A tandem light-emitting element employing an inverted-structure is provided. The light-emitting element includes a cathode, a first EL layer over the cathode, a second EL layer over the first EL layer, an anode over the second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a hole-transport material and an electron acceptor. The third layer includes an alkali metal or an alkaline earth metal. The second layer includes an electron-transport material.

A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.

A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.

Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

The present invention provides a highly sensitive biosensor that needs a smaller amount of sample for measurement. The biosensor comprises a first insulating base plate having a working electrode, a second insulating base plate having a counter electrode opposed to the working electrode, a reagent layer comprising at least an oxidoreductase, and a sample supply pathway formed between the first and second insulating base plates, wherein the working electrode, counter electrode and reagent layer are exposed to an inside of the sample supply pathway, and the distance between the working electrode and the counter electrode is 150 mum or less.

By incorporating carbon by means of ion implantation and a subsequent flash-based or laser-based anneal process, strained silicon/carbon material with tensile strain may be positioned in close proximity to the channel region, thereby enhancing the strain-inducing mechanism. The carbon implantation may be preceded by a pre-amorphization implantation, for instance on the basis of silicon. Moreover, by removing a spacer structure used for forming deep drain and source regions, the degree of lateral offset of the strained silicon/carbon material with respect to the gate electrode may be determined substantially independently from other process requirements. Moreover, an additional sidewall spacer used for forming metal silicide regions may be provided with reduced permittivity, thereby additionally contributing to an overall performance enhancement.

Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.

A pellet separator capable of accurately sorting and removing defective pellets without generating false identifications of nondefective pellets as defective pellets by suppressing diffused reflection inside even resin pellets of high transparency. A first background and a second background of the pellet separator are formed in the vicinity of a parabolic trajectory and shaped to be curved along the parabolic trajectory in the downstream direction thereof.

According to the present invention, provided is a magnetic recording medium 11 comprising: a non-magnetism base member 1; a lower soft magnetic underlying layer 2 formed on the non-magnetism base member 1; a non-magnetic layer 4 formed on the lower soft magnetic underlying layer 2; an upper soft magnetic underlying layer 6 formed on the non-magnetic layer 4; and a recording layer 9 having a perpendicular magnetic anisotropy, the recording layer 9 being formed on the upper soft magnetic underlying layer 6, wherein crystalline magnetic layers 3 and 5 are formed between the lower soft magnetic underlying layer 2 and the non-magnetic layer 4 or between this non-magnetic layer 4 and the upper soft magnetic underlying layer 6.

An exposure apparatus for illuminating a pattern with light from a light source and for exposing a predetermined surface with light from the pattern includes (i) a projection optical system for projecting the pattern onto the predetermined surface, the projection optical system having at least one optical element having optical surfaces, and (ii) a gas supplying device for locally supplying a gas to the at least one optical element. In one aspect, the gas supplying device directly blows the gas toward one of the optical surfaces of the at least one optical element, which is closest to the predetermined surface, from the predetermined surface side.

Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH₂Cl₂, SiCl₄, Si₂Cl₆, etc.) from an injector and feeding a mixed gas of monomethylamine (CH₃NH₂) and ammonia (NH₃) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).

A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

It is an object to provide a semiconductor device having a buried multilayer wiring structure in which generation of a resolution defect of a resist pattern is suppressed and generation of a defective wiring caused by the resolution defect is reduced. After a via hole (7) reaching an etching stopper film (4) is formed, annealing is carried out at 300 to 400° C. with the via hole (7) opened. As an annealing method, it is possible to use both a method using a hot plate and a method using a heat treating furnace. In order to suppress an influence on a lower wiring (20) which has been manufactured, heating is carried out for a short time of approximately 5 to 10 minutes by using the hot plate. Consequently, a by-product staying in an interface of an upper protective film (6) and an interlayer dielectric film (5) having a low dielectric constant and a by-product staying in an interface of the etching stopper film (4) and the interlayer dielectric film (5) having a low dielectric constant are discharged so that an amount of the residual by-product can be decreased.

The present invention aims at providing a method of manufacturing a semiconductor device capable of suppressing metal diffusion from the upper face of wiring.

In the present invention, a copper seed film containing copper and a first metal element is formed in a groove formed in a first interlayer film over a semiconductor substrate. After that, a copper plating treatment is performed. After that, a first heat treatment is performed in a first atmosphere in which the copper layer is not oxidized. Then, an excess metal layer of copper alloy is removed and copper alloy wiring is formed in the groove. After that, a second heat treatment is performed in a second atmosphere containing oxygen to form an oxide layer being the oxide of the first metal element over the surface of the copper alloy wiring.

A flux contains resin having film forming ability, activator, solvent, and at least one complex selected from silver complex and copper complex. The flux is used when soldering is performed onto a circuit having electroless nickel plating or further having gold plating on the electroless nickel plating. Allowing a barrier layer of silver or copper to deposit on the surfaces of lands suppresses the diffusion of nickel into the melted solder alloy during soldering, and also prevents phosphorous concentration. This improves the bonding strength of soldering and suppresses the reduction deposition of silver and/or copper to portions other than circuit patterns.

Uniformity in a plasma process can be increased by increasing a plasma confining effect by a cusp magnetic field over the whole circumference. There is provided a plasma processing apparatus which performs a process on a substrate by generating plasma of a processing gas in a depressurized processing chamber. The apparatus includes a magnetic field generation unit 200 including two magnet rings 210 and 220 vertically spaced from each other and arranged along a circumferential direction of the processing chamber. Each of the magnet rings includes multiple segments 212 and 222 of which magnetic poles are alternately reversed two by two along a circumferential direction of an inner surface of the magnet ring. In the magnetic field generation unit 200, arrangement of upper and lower magnetic poles is changed by rotating the lower magnet ring 220 in a circumferential direction with respect to the upper magnet ring 210.

This invention relates to plasma processing apparatus and in particular, but not exclusively, to inductively coupled plasma helicon or electron cyclotron resonance apparatus. A plasma generation chamber is sat above a process chamber, in which is located a workpiece support. A plasma generation or source region exists and coils are provided to create magnetic mirrors above and below the plasma generation zone, whereby electrons will be reflected back towards the plasma zone and there is no electrical conductive path extending around or through at least the upper mirror.

A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x>=0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.