4289 results about "Crystallinity" patented technology

A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

Methods of manufacturing polymeric intraluminal prostheses include annealing the polymeric material to selectively modify the crystallinity thereof. Annealing may be utilized to selectively modify various properties of the polymeric material of an intraluminal prosthesis, including: selectively increasing the modulus of the polymeric material; selectively increasing the hoop strength of the intraluminal prosthesis; selectively modifying the elution rate (increase or decrease) of a pharmacological agent subsequently disposed on or within the annealed polymeric material; selectively increasing/decreasing stress in the intraluminal prosthesis; and selectively modifying the polymeric material such that it erodes at a different rate.

This invention relates to flexible, transparent and conductive coatings and films formed using carbon nanotubes (CNT) and, in particular, single wall carbon nanotubes, with polymer binders. Preferably, coatings and films are formed from carbon nanotubes applied to transparent substrates forming one or multiple conductive layers at nanometer level of thickness. Polymer binders are applied to the CNT network coating having an open structure to provide protection through infiltration. This provides for enhancement of properties such as moisture resistance, thermal resistance, abrasion resistance and interfacial adhesion. Polymers may be thermoplastics or thermosets, or a combination thereof. Polymers may also be insulative or inherently electrical conductive, or any combination of both. Polymers may comprise single or multiple layers as a basecoat underneath a CNT coating, or a topcoat above a CNT coating, or combination of the basecoat and the topcoat forming a sandwich structure. A fluoropolymer containing binder, which is a solution of one fluoropolymer or a blend of fluoropolymers, which may be formulated with additives, is applied onto a carbon nanotube-based transparent conductive coating at nanometer level of thickness on a clear substrate such as PET and glass. The fluoropolymers or blend can be either semi-crystalline (with low level of crystallinity) or amorphous, preferably to be amorphous with low refraction index. Binder coating thickness can be adjusted by changing binder concentration, coating speed and/or other process conditions. This binder coating significantly improves optical transparency, and also maintain or increases conductivity of the CNT-based coating. With other benefits such as abrasion, thermal and moisture resistance, this binder coating and the resulting products is used for display and electronic applications.

It has a structure in which an active layer (5) that emits light by electric current injection is sandwiched between an n-type cladding layer (4) and a p-type cladding layer (6) made of materials having a larger band gap than the active layer (5), wherein the active layer (5) is made, for example, of Cd_xZn_1−xO (0≦x<1). It is further more preferable if the cladding layers (4), (6) are made, for example, of Mg_yZn_1−yO (0≦y<1). This narrows the band gap of the ZnO materials, and an oxide semiconductor capable of being wet-etched, easy to handle with, and excellent in crystallinity can be used as a material for an active layer or a cladding layer of a semiconductor light emitting device such as a blue light emitting diode or a blue laser diode in which an active layer is sandwiched between cladding layers, so that a blue semiconductor light emitting device being excellent in light emission characteristics can be obtained.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

The present invention has for its object to provide a process for manufacturing multilayer printed circuit boards which is capable of simultaneous via hole filling and formation of conductor circuit and via holes of good crystallinity and uniform deposition can be constructed on a substrate and high-density wiring and highly reliable conductor connections can be realized without annealing. The present invention is related to a process for manufacturing multilayer printed circuit boards which comprises disposing an interlayer resin insulating layer on a substrate formed with a conductor circuit, creating openings for formation of via holes in said interlayer resin insulating layer, forming an electroless plated metal layer on said interlayer resin insulating layer, disposing a resist thereon, performing electroplating, stripping the resist off and etching the electroless plated metal layer to provide a conductor circuit and via holes, wherein the electroplating is performed intermittently using said electroless plated metal layer as cathode and a plating metal as anode at a constant voltage between said anode and said cathode.

The present invention provides for novel sustained release silk-based delivery systems. The invention further provides methods for producing such formulations. In general, a silk fibroin solution is combined with a therapeutic agent to form a silk fibroin article. The article is then treated in such a way as to alter its conformation. The change in conformation increases its crytallinity or liquid crystallinity, thus controlling the release of a therapeutic agent from the formulation. This can be accomplished as single material carriers or in a layer-by-layer fashion to load different therapeutic agents or different concentrations of these agents in each layer.

A medical article comprising an implantable substrate having a coating is disclosed, the coating comprising a biologically erodable polymer having the glass transition temperature below about −50° C. The biologically erodable polymer can be blended with a polymeric additive which either has the glass transition temperature of about −50° C. or higher, or a degree of crystallinity greater than that of the first polymer.

The invention discloses a hydrocracking catalyst and a preparation method thereof. The catalyst comprises hydrogenation active metals and a carrier containing modified Y molecular sieve, alumina and amorphous aluminium silicon, wherein, the Y molecular sieve is prepared by the following method: the Y molecular sieve undergone hydro-thermal treatment by mixed water solution of aluminium salt and acid is adopted; the performance of the Y molecular sieve is as follows: specific surface is 800m<2>/g-900m<2>/g, total aperture volume is 0.40ml/g-0.50ml/g, relative crystallinity is 90%-130%, cell parameter is 2.434-2.440nm, aluminium silicon mol ratio is 20-100, infrared acid volume is 0.3-0.8mmol/g, the mol ratio of acid B and acid L is above 7.0, sodium oxide content is less than or equal to 0.05wt%. The catalyst prepared by the invention has the advantages of high catalytic activity, good target product selectivity and can produce heavy naphtha, aviation fuel and diesel fuel, and the like, with high yield and good quality.

There is provided a novel wound dressing material which has biocompatibility and infection controllability as essential properties required for such a material, especially excellent flexibility and water absorption properties, thereby accelerating smooth regeneration of a skin defect without stripping off the regenerating skin while removing the material from the skin. A healing agent is added to the wound dressing material which comprises an amorphous film of a crystallinity below 10% and contains fibroin and sericin as a main component.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a low degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.

The invention discloses a high-activity and high and medium oil type hydrocracking catalyst and a preparation method thereof. The catalyst comprises hydrogenation active metals and a carrier containing modified Y molecular sieves, amorphous silicon aluminum and alumina, wherein the modified Y molecular sieves have high crystallinity, large silicon aluminum ratio and proper total acid amount and acid distribution, and are obtained by treating Y molecular sieves after hydro-thermal treatment by a mixed aqueous solution of aluminum salts and an acid. The hydrocracking catalyst has high activity and good intermediate distillate oil selectivity and product quality, and is particularly suitable for hydrocracking technology for producing intermediate distillate oil.

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.

The invention relates to a modified molecular sieve capable of improving coking performance. The modified molecular sieve is prepared from a NaY type molecular sieve by the twice-crosslinking twice-roasting preparation method. According to the weight ratio, in the modified molecular sieve, the content of RE2O3 is 0.05 to 4 percent, the content of P is 0.05 to 5.0 percent; and the crystal cell of the modified molecular sieve is 2.430 to 2.440nm, and the crystallinity is between 35 and 55 percent. The modified molecular sieve has bigger hole volume of medium-and-large-sized holes and good stability; under the same condition of preparation process for catalyst, compared with the comparison molecular sieve, the modified molecular sieve has the advantages of reducing coke yield of the catalyst, simultaneously further improving the heavy oil cracking capability, further improving total liquid yield, and particularly facilitating the improvement of the yield of light oil.

A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

The present invention provides a high silica-alumina ratio small crystal grain NaY molecular sieve. The skeleton silica-alumina ratio of NaY molecular sieve, namely. SiO2/Al2O3 mole ratio is 6.0-7.0, and the average grain size is 300-800 nm. It can be made up by adopting non-template agent direct synthesis process. Its preparation method includes the following steps: firstly, stirring and ageing for 0.5-48 hr at 15-60deg.C to obtain crystallization guide agent, then mixing said guide agent, water, silicon source and aluminium source to obtain reaction mixture, then crystallizing said mixture at twice, first steps is dynamic crystallization and second step is static crystallization, finally, filtering, washing and drying so as to obtain the invented high silica-alumina ratio small crystal grain NaY molecular sieve whose relative crystallinity is greater than 80%.

A method and apparatus for underwater pelletizing and subsequent drying of polyethylene terephthalate (PET) polymers and other high temperature crystallizing polymeric materials to crystallize the polymer pellets without subsequent heating. High velocity air or other inert gas is injected into the water and pellet slurry line to the dryer near the pelletizer exit. Air is injected into the slurry line at a velocity of from about 100 to about 175 m³/hour, or more. Such high-speed air movement forms a vapor mist with the water and significantly increases the speed of the pellets into and out of the dryer such that the PET polymer pellets leave the dryer at a temperature sufficient to self-initiate crystallization within the pellets. A valve mechanism in the slurry line after the gas injection further regulates the pellet residence time and a vibrating conveyor after the dryer helps the pellets to achieve the desired level of crystallinity and to avoid agglomeration.

Disclosed herein are a dot-patterned structure for magnetic recording bits and a magnetic recording medium provided therewith. The former exhibits high functionality and high performance owing to good crystallinity. The dot-patterned structure is composed of a first layer, which is continuous, and a second layer, which is discrete. The magnetic recording medium having a dot-patterned recording layer is formed by the steps of treating an underlying layer by lithography, thereby forming grooves, filling the grooves by epitaxial growth with the same material as the underlying layer, removing the photoresist used for lithography in a solvent, thereby forming pits, and filling the pits by epitaxial growth with a magnetic film as the recording layer.

Blends of at least two polymers incorporating propylene-derived units and processes for producing such blends are provided. The first polymer of the blend is a low crystallinity polymer including propylene-derived units. The second polymer is a high crystallinity polymer including propylene-derived units. The polymer blends exhibit the beneficial performance characteristics of low crystallinity propylene polymers while minimizing certain processing and handling problems associated with low crystallinity propylene polymers. Low crystallinity propylene polymer pellets often exhibit a tendency to agglomerate because of the softness of such particles. Agglomeration of the pellets creates problems in handling and processing the particles. The polymer blends disclosed reduce the tendency of polymer pellets to agglomerate while maintaining the desirable physical properties, such as elastomeric properties, exhibited by low crystallinity propylene polymers. Various processes for producing the polymer blends are also provided.

The invention provides a noble metal-containing supported catalyst which contains one of the noble metals from the group Au, Ag, Pt, Pd, Rh, Ru, Ir, Os or alloys of one or more of these noble metals in the form of noble metal particles on a powdered support material. The particles deposited on the support material have a degree of crystallinity, determined by X-ray diffraction, of more than 2 and an average particle size between 2 and 10 nm. The high crystallinity and the small particle size of the noble metal particles lead to high catalytic activity for the catalyst. It is particularly suitable for use in fuel cells and for the treatment of exhaust gases from internal combustion engines.

Disclosed is a process for producing branched polymers including at least 50 mol % C₃–C₄₀ olefins. The process may include: (1) feeding a first catalyst, an activator, and one or more C₂–C₄₀ olefins into a first reaction zone at a temperature of greater than 70° C. and a residence time of 120 minutes or less to produce a product; (2) feeding the product a second catalyst, and an activator into a second reaction zone at a temperature of greater than 70° C., and a residence time of 120 minutes or less. One of the catalysts should be chosen to produce a polymer having a weight average molecular weight of 100,000 or less and a crystallinity of 20% or less. The other catalyst should be chosen to producing a polymer having a weight average molecular weight of 100,000 or less and a crystallinity of 20% or more.

The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.

The invention discloses microcrystal NaY-type molecular sieves and a preparation method thereof. In the microcrystal NaY-type molecular sieves, the molar ratio of SiO2 to Al2O3 is 4.0 to 6.0, and the average particle size is 100 to 700 nanometers. The microcrystal NaY-type molecular sieves are prepared by a method combining low-temperature synthesis directing agent, low-temperature synthesis gel and two-stage variable-temperature dynamic crystallization. The NaY-type molecular sieves have a relative crystallinity of over 80 percent after being roasted in the air at 600 DEG C for 3 hours or after undergoing hydrothermal treatment with vapor at 650 DEG C for 1 hour, as well as high thermostability and hydrothermal stability.

Golf balls and compositions for use in ball cores, covers and intermediate layers incorporate syndiotactic 1,2-polybutadiene having crystallinity and other specified physical properties. Golf balls incorporating the compositions of the present invention provide flexibility in golf ball design to improve ball performance, such as hit feel and spin rate, without adversely affecting shear-cut resistance of the ball. Also, methods for making golf balls include preparing a composition comprising syndiotactic 1,2-polybutadiene having crystallinity, and then incorporating the composition into a golf ball. The methods can include injection molding only, or injection and compression molding. When the composition being molded incorporates crosslinking agents, co-crosslinking agents, or crosslinking accelerators, preferred methods include inducing partial or total crosslinking of the composition at preferred steps of making the golf balls.

The invention discloses a hydrocracking catalyst for producing heavy naphtha in great abundance and a preparation method thereof. The catalyst contains hydrogenation active metals and a carrier which consists of modified Y molecular sieves and alumina, wherein the Y molecular sieves are obtained by using a mixed aqueous solution of aluminum salts and an acid to perform hydro-thermal treatment. The properties of the modified Y molecular sieves are as follows: the specific surface area is between 750 m<2>/g and 850 m<2>/g; the total pore volume is between 0.35 and 0.48 ml/g; the relative crystallinity is between 90 and 130 percent; the cell parameter is between 2.437 and 2.445 nanometers; the silicon-aluminum mol ratio is between 15 and 70; the infrared acid amount is between 0.5 and 1.0 mmol/g; the B acid/L acid is more than 7.0; and the content of sodium oxide is less than or equal to 0.05 weight percent. The hydrocracking catalyst has the characteristics of good catalytic activity, high heavy naphtha selectivity, high yield, high latent content of heavy naphtha arene, and so on.

The present invention relates to a pseudothin diaspore composition containing organic pore-expanding agent. Said composition contains 92-99.5 wt% of pseudothin diaspore and 0.5-8 wt% of organic pore-expanding agent, in which the crystallinity of pseudothin diaspore is 10-70%. In the pseudothin diaspore composition provided by said invention the organic pore-expanding agent content is low, after high-temperature calcination the alumina with large pore capacity and large pore diameter can be obtained. Said alumina can be used as carrier material for preparing hydrodemetalization catalyst for heavy oil, residual oil and short residuum specially.

A method for growing a β-Ga₂O₃ single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a Ga_zO₃ light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-Ga₂O₃ single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a β-Ga₂O₃ single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-Ga₂O₃ single crystal is grown on a substrate of a β-Ga₂O₃ single crystal A light-emitting device comprises an n-type substrate produced by doping a β-Ga₂O₃ single crystal with an n-type dopant and a p-type layer produced by doping the β-Ga₂O₃ single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.