1796 results about "Crystalline silicon" patented technology

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention provides a perovskite laminated photovoltaic cell assembly and a preparation method thereof, the perovskite laminated photovoltaic cell assembly comprises a plurality of first battery packs connected in parallel, each first battery pack comprises a plurality of laminated cells connected in series, and each laminated cell comprises a perovskite cell and a crystalline silicon cell which are stacked; a first light absorption layer and a first hole transport layer of the perovskite cell are etched by P2 laser to form a plurality of perovskite sub-cells which are connected in parallel, and the perovskite cell is used for absorbing short-wavelength light in front sunlight; the second hole transport layer and the intermediate electrode layer of the crystalline silicon cell are etched by P1 laser to form a plurality of crystalline silicon sub-cells which are connected in parallel, the perovskite cell is used for absorbing long-wavelength light in front sunlight, and the absolute value of the difference between the current density of the perovskite cell and the current density of the crystalline silicon cell is smaller than or equal to a first preset value. According to the laminated battery piece, the current density consistency of the perovskite battery and the crystalline silicon battery in the laminated battery piece is high, the electrical loss can be reduced, and the power generation efficiency can be improved.

A method for treating a stack includes a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, the method including exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW / m2.

The invention relates to the technical field of solar cells, and provides a laminated cell and a manufacturing method thereof, which are at least beneficial to improving the efficiency of the laminated cell. The laminated cell comprises a crystalline silicon bottom cell, a middle layer and a perovskite top cell which are sequentially laminated in a preset direction, the middle layer comprises a conductive composite layer, the conductive composite layer is located on the surface, facing the perovskite top cell, of the crystalline silicon bottom cell, and materials of the conductive composite layer comprise a conductive polymer and a metal dopant; the metal grid layer is embedded into one side, far away from the crystalline silicon bottom battery, of the conductive composite layer, and the conductive composite layer exposes the surface, far away from the conductive composite layer, of the metal grid layer; the barrier layer is located on the side, away from the composite layer, of the metal grid layer and covers the surfaces of the metal grid layer and the conductive composite layer.

The invention provides a back contact solar cell, a preparation method thereof and a photovoltaic module. The back contact solar cell includes a crystalline silicon substrate and a first functional film. The back of the crystalline silicon substrate is provided with a first region and an isolation region, and the isolation region is arranged on one side of the first region. The first functional film is arranged on the first area in a stacked mode, the first functional film is provided with a light trapping part close to the isolation area, the light trapping part is provided with at least one of a light trapping valley and a light trapping peak, the light trapping valley shrinks in the direction from the groove opening to the groove bottom, and the side wall of the light trapping peak expands outwards in the direction from the top end to the bottom end. Wherein the shrunk light trapping valley and the expanded light trapping peak can reflect incident light towards the interior of the first functional film and the crystalline silicon substrate, so that a light trapping effect is achieved, the utilization rate of back incident light is increased, and the double-sided rate of the back contact solar cell is effectively increased; therefore, the efficiency of the back contact solar cell can be further improved.

The invention provides a single-glass crystalline silicon photovoltaic module recovery method, and aims to solve the problems that fluorine film residues easily exist on a packaging adhesive film and fluorine-containing waste gas is discharged during subsequent pyrolysis of the packaging adhesive film after a back plate is removed by an existing physical disassembly, pyrolysis, separation and recovery process, and in addition, most welding strip coatings on the market contain lead, so that when the adhesive film is removed by pyrolysis, the lead-containing waste gas cannot be discharged during the subsequent pyrolysis of the packaging adhesive film. The lead element diffuses to pollute the battery piece, and the subsequent recovery difficulty is increased. Before the packaging adhesive film and the battery piece are shoveled off by a heat knife, a packaging adhesive film thinning process and a welding strip removing process are added. The residual backboard and the residual fluorine film can be removed together through the adhesive film thinning process, and the problem of fluorine-containing tail gas emission is solved; in addition, the lead-containing solder strip is removed before pyrolysis, and the solder strip is not subjected to a high-temperature process, so that pollution of lead elements to a battery piece is reduced; by optimizing the disassembling process, the breakage rate of the removed back glass is reduced, and the production yield of a production line is increased. The method is not only suitable for recycling of complete single-glass assemblies, but also suitable for recycling of broken single-glass assemblies, and the process applicability is high.

The invention relates to the technical field of solar cell module packaging, in particular to a packaging structure for a perovskite-back contact crystalline silicon laminated solar cell and a preparation method of the packaging structure. The packaging structure comprises a front light conversion glass layer, a perovskite top cell layer, an infrared light-transmitting adhesive film layer, a back contact crystal silicon bottom cell layer, an adhesive film layer and a packaging bottom plate which are arranged in sequence, and butyl rubber surrounding the perovskite top cell layer, the infrared light-transmitting adhesive film layer, the back contact crystal silicon bottom cell layer and the adhesive film layer is arranged between the front light conversion glass layer and the packaging bottom plate, and the near infrared transmittance of 780 nm to 1100 nm in the infrared transparent adhesive film layer is 93% to 100%. According to the packaging structure based on the front light conversion glass layer and the infrared light-transmitting adhesive film layer, regulation and control of short-wave ultraviolet and near-infrared spectrums are considered, and the photoelectric property and reliability of the perovskite-crystalline silicon four-terminal laminated device are remarkably improved.

A method for edge passivation of crystalline silicon-based shingle cells, in which multiple crystalline silicon-based shingle cells are stacked to form a shingle cell group with cut edges thereof co-planar to form a to-be-passivated surface, and then the shingle cell group is placed in a fixing tooling to form a passivation unit. The passivation unit is conveyed by a conveying mechanism to an evaporation and annealing mechanism. A first source material is evaporated at 20-300° C. under vacuum in the evaporation and annealing mechanism to form a first gaseous source material, which is deposited on the to-be-passivated surface to form a first passivation layer. The shingle cell group with the first passivation layer is annealed at 100-350° C. A passivation device for implementing such method is further provided.

The invention relates to a preparation method of a solar cell piece and the solar cell piece, and the preparation method of the solar cell piece comprises the following steps: preparing a tunneling oxide layer on the surface of an n-type crystalline silicon substrate, depositing polycrystalline silicon on the surface of the tunneling oxide layer under a first condition, and forming a first polycrystalline silicon layer, polycrystalline silicon is deposited on the surface of the first polycrystalline silicon layer under a second condition to form a second polycrystalline silicon layer, the temperature T1 of the first condition is larger than the temperature T2 of the second condition, the crystallization rate in the first polycrystalline silicon layer is smaller than the crystallization rate in the second polycrystalline silicon layer, annealing treatment and boron diffusion are carried out on the first polycrystalline silicon layer and the second polycrystalline silicon layer under the same condition, and the polycrystalline silicon layer is formed. The first polycrystalline silicon layer is converted into a first doped polycrystalline silicon layer, the second polycrystalline silicon layer is converted into a second doped polycrystalline silicon layer, the ratio F of the concentration of the first doped polycrystalline silicon layer to the concentration of the second doped polycrystalline silicon layer is larger than or equal to 0.01 and smaller than or equal to 0.1, the boron doping concentration in the first doped polycrystalline silicon layer in direct contact with the tunneling oxide layer is reduced, and the passivation level is improved.

The invention relates to the technical field of crystalline silicon solar cells, and particularly discloses a low parasitic absorption TOPCon solar cell which comprises an N-type silicon substrate, a boron emitter is arranged on the front surface of the N-type silicon substrate, a front passivation layer and an antireflection layer are arranged on the side face of the boron emitter, and a tunneling oxide layer is arranged on the back surface of the N-type silicon substrate. Hydrogenated lightly-doped polycrystalline silicon and hydrogenated heavily-doped polycrystalline silicon are arranged on the side surface of the tunneling oxide layer, and conductive oxide is arranged between the hydrogenated lightly-doped polycrystalline silicon and the hydrogenated heavily-doped polycrystalline silicon. According to the low parasitic absorption TOPCon solar cell provided by the invention, on the basis of a TOPCon cell, the thickened fluorine-doped tin oxide is used as the second conductive oxide layer by utilizing the transparent and conductive characteristics of the fluorine-doped tin oxide. Inward diffusion of phosphorus atoms can be effectively prevented during annealing, and inward diffusion of metal Ag can be limited during sintering. Thus, the thinned outer layer hydrogenated heavily doped Poly-Si is configured through the thickened fluorine-doped tin oxide, so that parasitic absorption is reduced.

The embodiment of the invention relates to the field of solar cells, provides a solar cell and a preparation method thereof, and at least can solve the problem that the performance of a fragmented cell is poor. The solar cell comprises fragmented cells, at least two fragmented cells are formed by segmenting the same whole solar cell along a first direction, and each fragmented cell comprises a first surface, a second surface and a third surface connected with the first surface and the second surface, the first surface is a partial area of the front surface of the whole solar cell, the second surface is a partial area of the back surface of the whole solar cell, and the third surface is a cross section of the fragmented cell after segmentation processing; the crystalline silicon layer is positioned on the third surface; the silicon oxide layer is positioned on the surface of the crystalline silicon layer; and the metal oxide layer is positioned on the silicon oxide layer.

The invention belongs to the field of conductive paste, and discloses silver-coated nickel paste, a preparation method of the silver-coated nickel paste and a metallization method of a high-temperature sintered silicon solar cell. The conductive powder in the silver-coated nickel paste accounts for 80-95% by mass of the paste, and the silver-coated nickel paste comprises silver-coated nickel powder and micron silver powder; 1-6% of glass powder; 0.1-3% of organic resin; 0.5%-0.8% of a thixotropic agent; and 0-1% of other auxiliary agents and the balance of solvent. Wherein the conductive powder is a mixture of silver-coated nickel powder and silver powder in a mass ratio of 1: (0-50); the resistivity of the silver-coated nickel powder is less than or equal to 96 mu omega.cm, the antioxidant resistivity is less than or equal to 205 mu omega.cm, and the titrated nickel content is less than or equal to 0.01 mol / L; when the silver-coated nickel paste is used for printing a crystalline silicon solar cell on the single back side, compared with pure silver paste, the silver-coated nickel paste is slightly higher in line resistance, basically level in contact resistance and basically level in printing wet weight, the efficiency is 0%-2% lower than that of the pure silver paste after adjustment, and the silver paste can be used for replacing crystalline silicon solar cell silver paste of pure silver powder. The invention correspondingly discloses a preparation method of silver-coated nickel paste and a metallization method of a high-temperature sintered crystalline silicon solar cell.

The invention relates to the technical field of optical processing, and provides a large-caliber monocrystalline silicon aspheric surface high-precision polishing method which is characterized by comprising the following steps: S10, obtaining full-caliber surface shape error distribution of a large-caliber monocrystalline silicon aspheric surface and mapping the full-caliber surface shape error distribution to a discrete grid; s20, constructing a residence time distribution optimization model and a polishing path planning optimization model, and outputting an optimal residence time distribution matrix and a polishing path sequence by taking the surface shape error parameters of the large-aperture monocrystalline silicon aspheric surface as input; s30, based on the optimal residence time distribution matrix and the polishing path sequence, the aspheric surface of the large-diameter monocrystalline silicon is polished; and S40, after each polishing cycle, the steps S10-S40 are repeated until the number of iterations is reached. According to the method, a closed-loop control method of time distribution-path planning-dynamic calibration is formed, so that the surface shape precision and efficiency of large-diameter aspheric surface polishing are remarkably improved.

The invention discloses a low-crystalline-silicon-dioxide-content environment-friendly ceramic rock plate with a hydrophobic self-cleaning function and a manufacturing method, and the ceramic rock plate comprises a green body layer, a decorative layer arranged on the upper surface of the green body layer and a hydrophobic self-cleaning coating arranged on the upper surface of the decorative layer, the green body layer comprises the following chemical components in percentage by weight: 58%-65% of SiO2 (T), 22%-28.5% of Al2O3, 0-3% of Fe2O3, 0.5%-7% of CaO, 0.5%-5% of MgO, 1.5%-5% of K2O, 0.35%-3% of Na2O and the balance of impurities, the content of crystalline silicon dioxide SiO2 (Cp) in the phase composition of the green body layer is less than or equal to 10% in percentage by weight, and the static water contact angle of the hydrophobic self-cleaning coating is greater than 90 degrees. The prepared ceramic rock plate product is low in crystalline silicon dioxide content, good in toughness and high in strength, so that the processability is good, little crystalline silicon dioxide dust is generated in the processing process, the product has the hydrophobic self-cleaning function, and the hydrophobic self-cleaning coating is high in firmness, high in durability, good in pollution resistance and free of substances such as fluorine harmful to human bodies and the environment.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention provides a laser-assisted sintering method, a crystalline silicon solar cell and a photovoltaic module, and relates to the technical field of crystalline silicon solar cells. The laser-assisted sintering method comprises the steps that a to-be-sintered area of the crystalline silicon solar cell is divided into N equal parts in the direction perpendicular to a fine grid line, the first to Nth to-be-sintered areas which are arranged in sequence are obtained, and N is a positive integer larger than or equal to 4; and laser is adopted to irradiate the metal grid lines on all the to-be-sintered areas, and bias voltage is loaded on the metal grid lines on all the to-be-sintered areas so that the metal grid lines can be sintered. The crystalline silicon solar cell prepared with the metal grid lines is divided into a plurality of to-be-sintered areas, the bias voltage and the laser output power of each to-be-sintered area are controlled, the sintering effect of the metal grid lines can be effectively improved, the crystalline silicon solar cell forms good ohmic contact, and therefore the photoelectric conversion efficiency of the crystalline silicon solar cell is improved.

The invention relates to the technical field of photovoltaics, and discloses a TBC battery structure capable of automatically forming gap areas and a PVD preparation method thereof.The TBC battery structure comprises a silicon substrate, p + areas and n + areas are arranged on the back surface of the silicon substrate, the height positions of the p + areas and the n + areas on the back surface of the silicon substrate are staggered to form steps, and the steps are arranged on the back surface of the silicon substrate. A gap region is formed on the side wall of the step connecting the p + region and the n + region, and the gap region is used for electrically isolating the p + region and the n + region; the p + region comprises a first tunneling oxide layer, a p-poly layer, a second tunneling oxide layer and an n-poly layer which are sequentially deposited on the silicon substrate; and the n + region is provided with a second tunneling oxide layer and an n-poly layer which are sequentially deposited on the silicon substrate. According to the invention, the p-poly is superposed with the n-poly to form the tunnel junction, so that the n-poly on the p-poly can be directly prevented from being removed by using the second laser, the damage of the laser to the crystalline silicon layer on the surface is avoided, meanwhile, a laser grooving process is reduced, and the production cost is greatly reduced.

The invention provides a perovskite-crystalline silicon laminated cell, which comprises a heterogeneous crystalline silicon cell, a tunnel junction, a conductive layer, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer and a transparent electrode layer which are sequentially laminated, wherein the first carrier transport layer comprises a dendritic structure facing and extending into the perovskite light absorption layer, and the length of the dendritic structure is smaller than the thickness of the perovskite light absorption layer. According to the perovskite-crystalline silicon laminated cell provided by the invention, through the arrangement of the dendritic structure with a relatively good capillary effect in the first carrier transport layer, a high-quality perovskite absorption layer can be formed, so that the energy conversion efficiency of the perovskite-crystalline silicon laminated solar cell is greatly improved.

The invention discloses a solar cell process passivation monitoring and repairing device, which relates to the technical field of crystalline silicon solar cell manufacturing, and comprises a test probe row, a roller slide platform, a data analysis system and a laser, the laser is a purple picosecond laser, the pulse energy density is 500W / cm < 2 >-8000W / cm < 2 >, the laser repetition frequency is 500KHz-2000KHz, and the pulse stability is less than 3% RMS. According to the invention, monitoring data is collected, an abnormal area and repair data are analyzed and fed back to the laser, the laser adopts laser with a certain pulse signal to carry out thermal processing, crystal lattices are enabled to vibrate orderly through thermal driving, and internal doping of polycrystalline silicon is redistributed, so that the purpose of repairing an abnormal silicon wafer is achieved. And the manufacturing cost of the solar cell is further reduced.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a preparation method thereof, and the preparation method of the back contact cell comprises the steps: providing a substrate; forming a tunneling oxide layer and an intrinsic crystalline silicon layer; forming a first silicon oxide layer on the surface of the intrinsic crystalline silicon layer on the second region and the spacer region; carrying out first doping treatment on the intrinsic crystalline silicon layer on the first region, so that the intrinsic crystalline silicon layer on the first region is converted into a first doped conductive layer containing a first doping element; removing the first silicon oxide layer; forming a second silicon dioxide layer on the first doped conductive layer and the surface of the intrinsic crystalline silicon layer on the spacer region; performing second doping treatment on the intrinsic crystalline silicon layer on the second region, so that the intrinsic crystalline silicon layer on the second region is converted into a second doped conductive layer containing a second doping element; and removing the second silicon dioxide layer. According to the embodiment of the invention, the performance and preparation efficiency of the back contact battery can be improved at least, and the problem of high preparation process difficulty caused by laser treatment is avoided.

The invention belongs to the technical field of rare and precious metal recovery, and particularly relates to a method for recovering metallic silver from waste crystalline silicon battery pieces, which comprises the following steps: (1) putting the waste crystalline silicon battery pieces into an inorganic alkali aqueous solution for soaking reaction to obtain an aluminum-containing solution and dealuminized crystalline silicon pieces; (2) adding the dealuminized crystal silicon wafer into a mixed solution of organic acid and hydrogen peroxide for soaking reaction, filtering and washing to respectively obtain silver-containing filtrate and a silver-removed silicon wafer; (3) carrying out chlorination precipitation reaction on the silver-containing filtrate and a chlorine source, filtering and drying to obtain silver chloride powder; (4) adding silver chloride powder into an ammonia water solution, heating and stirring to completely dissolve silver chloride to obtain a silver-ammonia solution; (5) adding PVP (Polyvinyl Pyrrolidone) into the silver-ammonia solution, heating and stirring until the PVP is completely dissolved, adding ascorbic acid, and carrying out reduction reaction at room temperature to obtain metal silver powder precipitate; and filtering, washing and drying the precipitate to obtain the spherical silver powder. According to the method, the silver recovery efficiency is high, the spherical nanoscale silver powder can be prepared, and the purity is high.

The invention relates to a P-type double-sided passivation selective contact TOPCon cell structure and a preparation method thereof, and belongs to the technical field of solar cells. According to the cell prepared by the invention, the short-circuit current and the photoelectric conversion photoelectric efficiency are improved, a polycrystalline silicon doping layer and a tunneling oxide layer in a non-metal contact region outside a front electrode position are removed through laser film opening, and a selective local contact structure is formed in a metal contact region at the electrode position; current parasitic absorption and contact recombination between metal and the surface of crystalline silicon are reduced; the PN junction is manufactured on the back face, front face light absorption is prevented from being affected, low-power laser is adopted to ensure that the back face PN junction is not damaged by the laser in a non-metal contact area outside the back face electrode position, and then back face current parasitic absorption is greatly reduced by etching and cleaning a back face tunneling oxide layer of the area.

The invention discloses a back contact cell and a manufacturing method thereof, relates to the technical field of photovoltaics, and aims to prevent electric leakage between doped semiconductor layers with opposite conduction types in the back contact cell. The back contact cell includes a semiconductor substrate, a first doped semiconductor layer, an intrinsic semiconductor layer, a second doped semiconductor layer, and an insulating mask layer. The part, located on the first region, of the first doped semiconductor layer is a first doped part, and the other part is a second doped part. The doping concentration of impurities in the second doping part is smaller than that of the impurities in the first doping part. The intrinsic semiconductor layer is formed on a portion of the isolation region outside the second doped portion, and is integrally formed with the first doped semiconductor layer. And the second doped semiconductor layer covers the second region, at least part of the intrinsic semiconductor layer and at least part of the second doped part. The conduction types of the second doped semiconductor layer and the first doped semiconductor layer are opposite, and at least one of the second doped semiconductor layer and the first doped semiconductor layer is a doped crystalline silicon layer.

The invention provides a method for synergistically recovering all elements of crystal silicon cells of a decommissioned photovoltaic module, which comprises the following steps of: collecting large-particle waste crystal silicon cells and grinding the large-particle waste crystal silicon cells to obtain powder; the powder is leached with nitric acid, and leach liquor and impurity-removed silicon powder are obtained; leaching the silicon powder subjected to impurity removal by using an HF solution to remove a silicon nitride layer, and filtering, washing and drying to obtain the silicon powder meeting the industrial standard; the leaching solution is subjected to chlorination precipitation to obtain silver chloride and a leaching solution with silver removed, and after the silver chloride is filtered, the silver chloride is subjected to acid pickling and water washing to obtain silver chloride; sodium sulfide is added into the leaching solution after silver removal, metal in the leaching solution is precipitated, and a solution containing Al < 3 + > can be obtained after filtering; the method comprises the following steps: adding an alkaline substance into a solution containing Al < 3 + >, filtering to obtain an aluminum hydroxide precipitate, and washing the aluminum hydroxide precipitate to remove foreign ions adsorbed on the surface; one technical effect of the invention is that collaborative recovery and treatment of each element in the waste crystal silicon battery piece are realized.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a specific passivation structure and a manufacturing method and application of the back contact cell. A second semiconductor layer in the back contact cell comprises an amorphous silicon layer and a second doped crystalline silicon layer which are sequentially arranged from the back face of a silicon wafer to the outside; the second doped crystalline silicon layer comprises a second doped microcrystalline region and second doped amorphous regions located on the two sides of the second doped microcrystalline region, the second doped microcrystalline region is located at the position corresponding to the second semiconductor opening region and makes contact with the conductive film layer, and the second doped amorphous regions are laid at the end of the side face of the first doped polycrystalline silicon layer and outside the back face of the adjacent part of the first doped polycrystalline silicon layer; wherein the crystallization rate of the second doped microcrystalline region is 5%-80%. According to the invention, the bulk resistivity of the second doped crystalline silicon layer can be greatly reduced, and the contact resistivity between the second doped crystalline silicon layer and the conductive film layer is also reduced, so that the series resistance of the cell is greatly reduced, the leakage current is effectively avoided, and the cell efficiency is improved.

The invention discloses a method for recovering a silicon wafer and precious metal silver in a decommissioned crystalline silicon photovoltaic panel, which comprises the following steps of: 1, mechanically disassembling and pyrolyzing the decommissioned photovoltaic panel to obtain a crystalline silicon battery piece; 2, preparing molten salt, and heating the molten salt to melt the salt; and step 3, placing the crystalline silicon cell in molten salt, carrying out selective etching separation, taking out the crystalline silicon cell after etching is finished, and washing with water to obtain a silicon wafer and a silver wire. According to the method, the melting temperature of the used fused salt is low, silver and silicon in the photovoltaic panel can be separated in a targeted mode, the fused salt does not react with substrate silicon and silver wires on the surface, the high recovery efficiency of silver and silicon is guaranteed, meanwhile, environmental pollution caused by silver and silicon in the recovery process is reduced, on the basis, silver and silicon can be obtained through one-step separation and recovery, and the method is suitable for industrial production. The method has the advantages of simple operation, short process, environmental friendliness and the like.

Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and di-electric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a reducing agent. A ratio of a reducing agent flow rate to a metal halide precursor flow rate is at least 10:1, or 10:1-10,000:1. After the metal layer deposition, the substrate is annealed to convert the metal layer to a metal silicide layer without any substrate contamination.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention belongs to the technical field of crystalline silicon solar cell edge passivation films, and particularly relates to an aluminum oxide and silicon nitride laminated passivation film, a preparation method thereof and a crystalline silicon cell, and the method comprises the following steps: S1, cutting and stacking a cell piece, and enabling the cutting surfaces of the cell pieces to be in the same plane; s2, carrying out vacuum preheating treatment on the battery slices; s3, sequentially introducing carrier gas carrying TMAl molecules and plasma oxidized water vapor, and after purging is completed, carrying out a plate-type atomic layer deposition reaction on the preheated battery slices to prepare an Al2O3 layer; wherein the deposition reaction temperature is 170-310 DEG C, and the deposition pressure is 1-50 Pa; s4, carrying out PECVD deposition reaction on the battery slice with the Al2O3 layer deposited on the cutting surface to prepare a silicon nitride layer; wherein the deposition reaction temperature ranges from 100 DEG C to 350 DEG C, and the deposition pressure ranges from 1 Pa to 100 Pa; and step S5, cooling the battery piece to obtain the battery piece with the aluminum oxide and silicon nitride laminated passivation film.