1307 results about "Crystalline silicon" patented technology

The invention relates to the technical field of solar cells, and provides a laminated cell and a manufacturing method thereof, which are at least beneficial to improving the efficiency of the laminated cell. The laminated cell comprises a crystalline silicon bottom cell, a middle layer and a perovskite top cell which are sequentially laminated in a preset direction, the middle layer comprises a conductive composite layer, the conductive composite layer is located on the surface, facing the perovskite top cell, of the crystalline silicon bottom cell, and materials of the conductive composite layer comprise a conductive polymer and a metal dopant; the metal grid layer is embedded into one side, far away from the crystalline silicon bottom battery, of the conductive composite layer, and the conductive composite layer exposes the surface, far away from the conductive composite layer, of the metal grid layer; the barrier layer is located on the side, away from the composite layer, of the metal grid layer and covers the surfaces of the metal grid layer and the conductive composite layer.

The invention provides a single-glass crystalline silicon photovoltaic module recovery method, and aims to solve the problems that fluorine film residues easily exist on a packaging adhesive film and fluorine-containing waste gas is discharged during subsequent pyrolysis of the packaging adhesive film after a back plate is removed by an existing physical disassembly, pyrolysis, separation and recovery process, and in addition, most welding strip coatings on the market contain lead, so that when the adhesive film is removed by pyrolysis, the lead-containing waste gas cannot be discharged during the subsequent pyrolysis of the packaging adhesive film. The lead element diffuses to pollute the battery piece, and the subsequent recovery difficulty is increased. Before the packaging adhesive film and the battery piece are shoveled off by a heat knife, a packaging adhesive film thinning process and a welding strip removing process are added. The residual backboard and the residual fluorine film can be removed together through the adhesive film thinning process, and the problem of fluorine-containing tail gas emission is solved; in addition, the lead-containing solder strip is removed before pyrolysis, and the solder strip is not subjected to a high-temperature process, so that pollution of lead elements to a battery piece is reduced; by optimizing the disassembling process, the breakage rate of the removed back glass is reduced, and the production yield of a production line is increased. The method is not only suitable for recycling of complete single-glass assemblies, but also suitable for recycling of broken single-glass assemblies, and the process applicability is high.

The invention relates to the technical field of solar cell module packaging, in particular to a packaging structure for a perovskite-back contact crystalline silicon laminated solar cell and a preparation method of the packaging structure. The packaging structure comprises a front light conversion glass layer, a perovskite top cell layer, an infrared light-transmitting adhesive film layer, a back contact crystal silicon bottom cell layer, an adhesive film layer and a packaging bottom plate which are arranged in sequence, and butyl rubber surrounding the perovskite top cell layer, the infrared light-transmitting adhesive film layer, the back contact crystal silicon bottom cell layer and the adhesive film layer is arranged between the front light conversion glass layer and the packaging bottom plate, and the near infrared transmittance of 780 nm to 1100 nm in the infrared transparent adhesive film layer is 93% to 100%. According to the packaging structure based on the front light conversion glass layer and the infrared light-transmitting adhesive film layer, regulation and control of short-wave ultraviolet and near-infrared spectrums are considered, and the photoelectric property and reliability of the perovskite-crystalline silicon four-terminal laminated device are remarkably improved.

The invention relates to a preparation method of a solar cell piece and the solar cell piece, and the preparation method of the solar cell piece comprises the following steps: preparing a tunneling oxide layer on the surface of an n-type crystalline silicon substrate, depositing polycrystalline silicon on the surface of the tunneling oxide layer under a first condition, and forming a first polycrystalline silicon layer, polycrystalline silicon is deposited on the surface of the first polycrystalline silicon layer under a second condition to form a second polycrystalline silicon layer, the temperature T1 of the first condition is larger than the temperature T2 of the second condition, the crystallization rate in the first polycrystalline silicon layer is smaller than the crystallization rate in the second polycrystalline silicon layer, annealing treatment and boron diffusion are carried out on the first polycrystalline silicon layer and the second polycrystalline silicon layer under the same condition, and the polycrystalline silicon layer is formed. The first polycrystalline silicon layer is converted into a first doped polycrystalline silicon layer, the second polycrystalline silicon layer is converted into a second doped polycrystalline silicon layer, the ratio F of the concentration of the first doped polycrystalline silicon layer to the concentration of the second doped polycrystalline silicon layer is larger than or equal to 0.01 and smaller than or equal to 0.1, the boron doping concentration in the first doped polycrystalline silicon layer in direct contact with the tunneling oxide layer is reduced, and the passivation level is improved.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a preparation method thereof, and the preparation method of the back contact cell comprises the steps: providing a substrate; forming a tunneling oxide layer and an intrinsic crystalline silicon layer; forming a first silicon oxide layer on the surface of the intrinsic crystalline silicon layer on the second region and the spacer region; carrying out first doping treatment on the intrinsic crystalline silicon layer on the first region, so that the intrinsic crystalline silicon layer on the first region is converted into a first doped conductive layer containing a first doping element; removing the first silicon oxide layer; forming a second silicon dioxide layer on the first doped conductive layer and the surface of the intrinsic crystalline silicon layer on the spacer region; performing second doping treatment on the intrinsic crystalline silicon layer on the second region, so that the intrinsic crystalline silicon layer on the second region is converted into a second doped conductive layer containing a second doping element; and removing the second silicon dioxide layer. According to the embodiment of the invention, the performance and preparation efficiency of the back contact battery can be improved at least, and the problem of high preparation process difficulty caused by laser treatment is avoided.

The invention belongs to the technical field of rare and precious metal recovery, and particularly relates to a method for recovering metallic silver from waste crystalline silicon battery pieces, which comprises the following steps: (1) putting the waste crystalline silicon battery pieces into an inorganic alkali aqueous solution for soaking reaction to obtain an aluminum-containing solution and dealuminized crystalline silicon pieces; (2) adding the dealuminized crystal silicon wafer into a mixed solution of organic acid and hydrogen peroxide for soaking reaction, filtering and washing to respectively obtain silver-containing filtrate and a silver-removed silicon wafer; (3) carrying out chlorination precipitation reaction on the silver-containing filtrate and a chlorine source, filtering and drying to obtain silver chloride powder; (4) adding silver chloride powder into an ammonia water solution, heating and stirring to completely dissolve silver chloride to obtain a silver-ammonia solution; (5) adding PVP (Polyvinyl Pyrrolidone) into the silver-ammonia solution, heating and stirring until the PVP is completely dissolved, adding ascorbic acid, and carrying out reduction reaction at room temperature to obtain metal silver powder precipitate; and filtering, washing and drying the precipitate to obtain the spherical silver powder. According to the method, the silver recovery efficiency is high, the spherical nanoscale silver powder can be prepared, and the purity is high.

Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and di-electric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a reducing agent. A ratio of a reducing agent flow rate to a metal halide precursor flow rate is at least 10:1, or 10:1-10,000:1. After the metal layer deposition, the substrate is annealed to convert the metal layer to a metal silicide layer without any substrate contamination.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

A back contact solar cell, a preparation method and a battery assembly, which belong to the technical field of crystalline silicon solar cells. The back contact solar cell comprises: a semiconductor substrate, the back surface of which includes first polarity regions and second polarity regions alternately arranged in a first direction; a first functional layer, which is disposed in the first polarity regions; a second functional layer, which is disposed in the second polarity regions; a laser protection layer, which is disposed on the side of the second functional layer away from the semiconductor substrate and exposes electrode contact regions of the second functional layer, wherein the material of the laser protection layer includes laser absorption material; first electrode structures, which are disposed on the side of the first functional layer away from the semiconductor substrate; and second electrode structures, which are disposed on the side of the second functional layer away from the semiconductor substrate and located in the electrode contact regions.

The invention provides a waste photovoltaic module high-value recovery process based on pyrolysis and wet purification, which comprises the following steps: carrying out pyrolysis decarburization on a waste photovoltaic module to obtain a glass plate, a crystalline silicon battery piece and a copper-tin soldering strip; the method comprises the following steps of: performing alkaline leaching on a crystal silicon cell to obtain a dealuminized crystal silicon wafer, performing acid pickling on the dealuminized crystal silicon wafer to obtain a silver-removed crystal silicon wafer and a silver leaching solution, and extracting a silver elementary substance from the silver leaching solution; removing impurities from the silver-removed crystal silicon wafer through a hydrofluoric acid solution to obtain a high-purity crystal silicon wafer; recovering a copper strip from the copper-tin soldering strip through a high-temperature smelting reduction method; after fluorine-containing pyrolysis gas generated in the pyrolysis process is subjected to combustion and heat exchange, hydrogen fluoride is removed in a two-stage alkali liquor absorption mode, then washing is conducted, and finally obtained flue gas is discharged. According to the wet purification process, the waste crystalline silicon battery piece can be subjected to high-purity recovery, and the crystalline silicon piece, silver and copper with high purity can be obtained. The hydrogen fluoride is removed by adopting a two-stage alkali liquor absorption method, so that the treatment efficiency of the hydrogen fluoride in the pyrolysis gas is improved.

A semiconductor device includes a foundation layer and a transistor layer. The foundation layer is based on single-crystalline silicon carbide and includes a current propagation region of a first conductivity type and a non-depletable shielding structure of a second conductivity type. The transistor layer is based on epitaxially grown single-crystalline silicon carbide and includes a transistor cell (TC) configured to control a current through the current propagation region. The transistor layer is formed on the foundation layer after formation of the shielding structure in the foundation layer such that an epitaxial interface forms between the transistor foundation layer and the layer. The current propagation region extends from the epitaxial interface between neighboring partial regions of the shielding structure. Along a vertical line orthogonal to the epitaxial interface and through a pn junction between the shielding structure and a region of the first conductivity type in the transistor layer, a net dopant concentration changes by at least 1e17 1 / cm3 per 0.1 μm at the position of the pn junction.

The invention belongs to the technical field of back contact cell preparation, and particularly relates to a back contact cell of an opening semiconductor without etching and a preparation method thereof, and the method comprises the steps: S103, carrying out the polishing or texturing of the back surface of a silicon wafer obtained in S102; s104, depositing an intrinsic crystalline silicon layer on the back surface of the silicon wafer; s105, the non-target deposition area is masked through a hard mask plate, and N-type crystalline silicon layers which are alternately arranged are deposited on the back face; replacing the mask of the hard mask plate to form a P-type crystalline silicon layer and an overlapping region; s106, depositing a conductive film layer on the back surface of the silicon wafer; s107, an opening is formed in the conductive film layer to form an isolation groove, and the width W4 of the isolation groove is controlled to range from 0.03 mm to 0.15 mm; and S108, forming a metal electrode on the back surface. According to the invention, the back semiconductor does not need to be opened by etching, the technological process is greatly simplified, etching damage is avoided, and the cell conversion efficiency, the cell stability and the production yield are improved.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

Embodiments employ Artificial Intelligence (AI) techniques to collect and analyze data associated with material input to a solar module recycling system, including e.g., AI model(s) and / or the recycling and recapture of the component materials. Recycling hardware for various functional areas (e.g., junction box / frame / glass removal; chemical / mechanical / physical separation; testing; sorting; cleaning; others) may be integrated to a central engine for processing and / or storage (e.g., in a database). Analysis of module recycling using the AI techniques may consider one or more of the following: module model; module manufacturer; module type (e.g., c-Si versus CdTe); power rating; module history; module label information; predicted / actual market prices; others. An outcome of AI analysis can offer estimates of resultant effect(s) upon speed and efficiency, by which materials travel through the recycling system. One possible benefit is the ability to rapidly optimize system parameters, providing high solar module throughput in the recycling system over time.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a graded ordered silicon-carbon negative electrode material for a lithium ion battery, which comprises the following steps: (S1) mixing phenolic resin and a template agent, calcining, and etching to obtain porous carbon containing macropores; (S2) carrying out cracking and carbon coating on the silicon source gas to obtain nano crystalline silicon containing a carbon coating layer; (S3) mixing the porous carbon with the nano crystalline silicon containing the carbon coating layer, and then carrying out ultrasonic vibration, so that macropores of the porous carbon are filled with the nano crystalline silicon to obtain a silicon-carbon composite material I; (S4) treating the silicon-carbon composite material I by using a carbon-containing sealing agent, and then activating to obtain a silicon-carbon composite material II; and (S5) carrying out vapor phase silicon deposition on the silicon-carbon composite material II to fill the amorphous silicon in the pores of the porous carbon, and then carrying out carbon coating to obtain the graded ordered silicon-carbon negative electrode material. The silicon-carbon negative electrode material prepared by the invention is of a composite structure in which crystalline silicon and amorphous silicon are spatially and orderly distributed, so that the structural stability and the uniform distribution of silicon are realized.

According to the invention, the bonding strength between wafers in the semiconductor manufacturing process is improved through a simple structure. Provided is a vacuum chamber (14) for bonding semiconductor wafers (W1, W2) to each other, one using a silicon electrode (G1) and the other using a semiconductor wafer (W2) before bonding crystalline silicon circles (W1, W2) facing each other; after the silicon electrode G1 and the semiconductor wafer W2 are processed for the first time, the silicon electrode G1 is replaced by the bonding wafer G2, and then the bonding wafer G2 and the semiconductor wafer W2 are processed for the second time. Then, the pair of wafers W1 and W2, which are opposite to each other, are bonded together by electrostatic force in a vacuum environment.

The invention discloses a conductive electrode, a preparation method thereof and a crystalline silicon solar cell, and belongs to the technical field of photovoltaic cells, the conductive electrode comprises a semiconductor base material and a first conductive structure, the semiconductor base material comprises a substrate, a tunneling layer, an n-doped polycrystalline silicon layer and a first passivation layer; the first conductive structure is arranged on the first passivation layer, penetrates through the first passivation layer and is electrically connected with the n-doped polycrystalline silicon layer; wherein the first conductive structure comprises conductive metal, the conductive metal comprises silver, and at least part of the conductive metal penetrates through the first passivation layer and is in electric contact with the face, facing the first passivation layer, of the n-doped polycrystalline silicon layer; and the n-doped polycrystalline silicon layer does not contain silver crystals. Therefore, silver crystals cannot grow into the n-doped polycrystalline silicon layer while the first conductive structure forms ohmic electrical contact with the n-doped polycrystalline silicon layer through the conductive metal, damage to the n-doped polycrystalline silicon layer is effectively reduced, the recombination loss is further reduced, and the photoelectric conversion efficiency of the crystalline silicon solar cell is ensured.

The invention discloses a back contact solar cell and a preparation method thereof, the back contact solar cell comprises a semiconductor substrate, the semiconductor substrate is provided with a first surface and a second surface which are opposite to each other, the first surface comprises a plurality of non-groove areas and a plurality of groove areas, the non-groove areas and the groove areas are alternately arranged on the first surface; a tunneling oxide layer and an N-type doped crystalline silicon layer; a first intrinsic amorphous silicon layer and a P-type doped amorphous silicon layer; and the isolation structure comprises an isolation layer and an isolation groove. According to the invention, the preparation process window of the back contact solar cell is enlarged, the process difficulty is reduced, and the surface passivation effect of the P region is improved, so that the performance of the solar cell can reach the effect equivalent to that of the existing HBC cell structure.

The invention belongs to the technical field of solar cell anti-aging, and provides an anti-attenuation film layer of a cell and a preparation method thereof.The anti-attenuation film layer comprises at least one silicon oxide layer, at least two silicon oxynitride layers, at least three silicon nitride layers, a first structural layer, at least two aluminum oxide layers and a doping layer which are sequentially arranged on the upper surface of crystalline silicon from top to bottom, the refractive index of the first structure layer is 1.8-2.1, and the refractive index of the bottommost layer of silicon nitride is 2.4-3.0. The bottommost aluminum oxide layer is subjected to dark annealing, so that the hydrogen content in aluminum oxide and the hydrogen content among three silicon nitride film layers are reduced; due to the increase of the high refractive index of the silicon nitride layer III, the parasitic absorption ratio of short-wave ultraviolet light in the film layer is increased, and the incidence amount of the ultraviolet light is reduced. According to the invention, the conduction rate of hydrogen into the silicon wafer body is reduced, the concentration content of free hydrogen at the interface is sequentially reduced, and the penetration angle of ultraviolet light is reduced, so that the ultraviolet attenuation resistance of the cell is realized.

The invention discloses a machining method for a monocrystalline silicon complex curved surface optical element. The machining method comprises the steps that S1, ultra-precision turning is conducted on the monocrystalline silicon complex curved surface optical element; s2, magneto-rheological polishing and shaping are carried out on the monocrystalline silicon complex curved surface optical element; s3, fairing the monocrystalline silicon complex curved surface optical element; and S4, the surface shape precision and the surface roughness of the monocrystalline silicon complex curved surface optical element are detected, if the detection result meets the requirement, machining is completed, and if the detection result does not meet the requirement, the step S2 is executed again. The method is simple in technological process and high in operability, after ultra-precision turning, the surface shape precision is good, subsurface damage is small, the grinding process can be omitted, the task load of the follow-up process is reduced, and the machining period of the monocrystalline silicon complex curved surface optical element is effectively shortened; by adopting a processing mode of combining ultra-precision turning and magneto-rheological polishing modification, processing and manufacturing of high-precision and high-surface-quality monocrystalline silicon complex curved surface elements can be realized.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

The invention relates to a perovskite / crystalline silicon laminated solar cell structure taking a tin dioxide thin film as a composite layer and a preparation method of the perovskite / crystalline silicon laminated solar cell structure, and belongs to the technical field of photovoltaics. According to the perovskite / crystalline silicon laminated solar cell structure, the tin dioxide thin film is used as a composite layer, so that the cost of cell preparation is reduced; in the preparation method of the perovskite / crystalline silicon laminated solar cell, the composite layer and the electron transport layer can adopt the same preparation method, so that the equipment cost in the preparation process is reduced; the perovskite / crystalline silicon laminated solar cell obtained by the cell structure and the preparation method provided by the invention is relatively low in preparation cost and relatively high in photoelectric conversion efficiency.

The invention discloses a preparation method of a bottom cell of a perovskite / crystalline silicon laminated solar cell, which comprises the following steps of: providing a bottom cell precursor with a surface heavily doped silicon layer and / or an emitter layer exposed, and depositing a hydrogen-rich metal oxide layer on the front surface or double surfaces of the bottom cell precursor by adopting an ALD (Atomic Layer Deposition) method; depositing a hydrogen injection passivation layer on the emitter layer on the back surface of the bottom cell precursor by adopting a PECVD method; printing low-aluminum-content silver paste on the hydrogen injection passivation layer to obtain a metal electrode grid line, and drying, shaping and slightly sintering the metal electrode grid line; and placing the lightly sintered bottom cell precursor in LECO equipment, and carrying out single-sided LECO treatment on a back metal electrode of the bottom cell to obtain the bottom cell. The preparation method is simple, streamline production is easy, the bottom cell precursor does not need to be additionally processed, the bottom cell precursor on a production line can be cut out for back metal electrode preparation and subsequent single-side LECO processing, and preparation and removal of a front metal electrode of the bottom cell are not needed.

The invention discloses a high-strength photovoltaic welding flux for a photovoltaic welding strip and a preparation method of the high-strength photovoltaic welding flux, and belongs to the technical field of energy conservation and environmental protection. According to the solder, the Sn-Zn-Bi alloy is used as a matrix, and the performance is comprehensively improved by introducing a dual nano reinforced phase of the multi-walled carbon nanotubes and the nano nickel particles. The preparation method comprises the steps of matrix alloy melting, a hydrothermal method, a liquid phase reduction method, ultrasonic dispersion, gas atomization powder preparation, silane coupling agent surface modification, scaling powder compounding, reflow soldering and the like. The obtained solder has excellent comprehensive performance, excellent thermal fatigue resistance and long-term reliability. The welding flux is suitable for interconnection welding of a main grid, a fine grid and a welding strip of a crystalline silicon photovoltaic cell, and provides technical guarantee for the service life of a photovoltaic module more than 25 years.

The invention belongs to the field of precious metal recovery, and particularly relates to a method for leaching silver from a silver-containing retired crystalline silicon solar cell. According to the method, the silver in the silver-containing decommissioned crystalline silicon solar cell is recycled and leached through the synergistic effect of an HNO3-H2O2-Fe < 3 + > composite leaching agent and ionic liquid, and the ionic liquid is prepared from choline chloride and malonic acid. Meanwhile, the leaching rate of silver is further improved by optimizing experimental parameters such as the reaction temperature, the reaction time and the H2O2 supply frequency in the three-section gradient temperature control leaching reaction. Compared with the traditional technology, the method disclosed by the invention is green and environment-friendly, low in cost, small in acid consumption and high in recovery rate.

The invention provides a wet purification process suitable for silicon and precious metal of a waste photovoltaic laminated piece, which comprises the following steps of: immersing a waste crystalline silicon battery piece into a NaOH solution, and removing an aluminum wire on the surface of the crystalline silicon battery piece to obtain a dealuminized crystalline silicon piece; the dealuminated crystal silicon wafer is subjected to acid pickling, and a silver-removed crystal silicon wafer and silver leaching liquid are obtained; removing impurities from the silver-removed crystal silicon wafer through a hydrofluoric acid solution to obtain a high-purity crystal silicon wafer; and extracting the silver elementary substance from the silver leachate through a hydrazine hydrate reduction method. According to the wet purification process, the waste crystalline silicon battery piece can be subjected to high-purity recovery, and the high-purity crystalline silicon wafer and the silver elementary substance can be obtained.

The invention relates to a crystalline silicon textured structure, a battery, a preparation method of the crystalline silicon textured structure and a photovoltaic module. The crystalline silicon textured structure comprises a silicon substrate and a pyramid-like structure arranged on the silicon substrate, the pyramid-like structure comprises a first part and a second part, the first part is located on the side, away from the silicon substrate, of the second part, the first part is provided with a first side face, the first side face is of a concave structure, and the first part is of a spine structure. In the crystalline silicon textured structure, the first part is provided with the first side surface with the concave structure, and the first part is of the spine structure, so that a contact point position for easily transmitting current can be provided, the filling factor of the battery is improved, and the photoelectric conversion efficiency of the battery is further improved.

The invention discloses a crystalline silicon cell module, a preparation method and a photovoltaic system, and belongs to the technical field of solar cells. The crystalline silicon battery assembly comprises a plurality of crystalline silicon battery pieces, the plurality of crystalline silicon battery pieces comprise a first crystalline silicon battery piece and a second crystalline silicon battery piece, the light facing surface of the first crystalline silicon battery piece is provided with a first connecting piece, and the backlight surface of the second crystalline silicon battery piece is provided with a second connecting piece; the first connecting piece comprises a first electrode grid line, the first electrode grid line is electrically connected with the light-facing surface of the first crystalline silicon battery piece, the second connecting piece comprises a second electrode grid line, the second electrode grid line is electrically connected with the backlight surface of the second crystalline silicon battery piece, and the first connecting piece and the second connecting piece extend in opposite directions so as to be connected with each other; and the first electrode grid line is in contact connection with the second electrode grid line. The electrode grid lines between the two crystal silicon battery pieces are directly connected, so that no welding strip is needed for connection, the shading influence caused by the welding strip can be avoided, and the power of the module is improved.