819 results about "Crystalline silicon" patented technology

The invention relates to the technical field of solar cell module packaging, in particular to a packaging structure for a perovskite-back contact crystalline silicon laminated solar cell and a preparation method of the packaging structure. The packaging structure comprises a front light conversion glass layer, a perovskite top cell layer, an infrared light-transmitting adhesive film layer, a back contact crystal silicon bottom cell layer, an adhesive film layer and a packaging bottom plate which are arranged in sequence, and butyl rubber surrounding the perovskite top cell layer, the infrared light-transmitting adhesive film layer, the back contact crystal silicon bottom cell layer and the adhesive film layer is arranged between the front light conversion glass layer and the packaging bottom plate, and the near infrared transmittance of 780 nm to 1100 nm in the infrared transparent adhesive film layer is 93% to 100%. According to the packaging structure based on the front light conversion glass layer and the infrared light-transmitting adhesive film layer, regulation and control of short-wave ultraviolet and near-infrared spectrums are considered, and the photoelectric property and reliability of the perovskite-crystalline silicon four-terminal laminated device are remarkably improved.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

A semiconductor device includes a foundation layer and a transistor layer. The foundation layer is based on single-crystalline silicon carbide and includes a current propagation region of a first conductivity type and a non-depletable shielding structure of a second conductivity type. The transistor layer is based on epitaxially grown single-crystalline silicon carbide and includes a transistor cell (TC) configured to control a current through the current propagation region. The transistor layer is formed on the foundation layer after formation of the shielding structure in the foundation layer such that an epitaxial interface forms between the transistor foundation layer and the layer. The current propagation region extends from the epitaxial interface between neighboring partial regions of the shielding structure. Along a vertical line orthogonal to the epitaxial interface and through a pn junction between the shielding structure and a region of the first conductivity type in the transistor layer, a net dopant concentration changes by at least 1e17 1 / cm3 per 0.1 μm at the position of the pn junction.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of a graded ordered silicon-carbon negative electrode material for a lithium ion battery, which comprises the following steps: (S1) mixing phenolic resin and a template agent, calcining, and etching to obtain porous carbon containing macropores; (S2) carrying out cracking and carbon coating on the silicon source gas to obtain nano crystalline silicon containing a carbon coating layer; (S3) mixing the porous carbon with the nano crystalline silicon containing the carbon coating layer, and then carrying out ultrasonic vibration, so that macropores of the porous carbon are filled with the nano crystalline silicon to obtain a silicon-carbon composite material I; (S4) treating the silicon-carbon composite material I by using a carbon-containing sealing agent, and then activating to obtain a silicon-carbon composite material II; and (S5) carrying out vapor phase silicon deposition on the silicon-carbon composite material II to fill the amorphous silicon in the pores of the porous carbon, and then carrying out carbon coating to obtain the graded ordered silicon-carbon negative electrode material. The silicon-carbon negative electrode material prepared by the invention is of a composite structure in which crystalline silicon and amorphous silicon are spatially and orderly distributed, so that the structural stability and the uniform distribution of silicon are realized.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

The invention discloses a high-strength photovoltaic welding flux for a photovoltaic welding strip and a preparation method of the high-strength photovoltaic welding flux, and belongs to the technical field of energy conservation and environmental protection. According to the solder, the Sn-Zn-Bi alloy is used as a matrix, and the performance is comprehensively improved by introducing a dual nano reinforced phase of the multi-walled carbon nanotubes and the nano nickel particles. The preparation method comprises the steps of matrix alloy melting, a hydrothermal method, a liquid phase reduction method, ultrasonic dispersion, gas atomization powder preparation, silane coupling agent surface modification, scaling powder compounding, reflow soldering and the like. The obtained solder has excellent comprehensive performance, excellent thermal fatigue resistance and long-term reliability. The welding flux is suitable for interconnection welding of a main grid, a fine grid and a welding strip of a crystalline silicon photovoltaic cell, and provides technical guarantee for the service life of a photovoltaic module more than 25 years.

The invention belongs to the field of photovoltaic modules, and discloses a perovskite crystalline silicon laminated photovoltaic module and a preparation method thereof.The photovoltaic module comprises front plate glass, and a top cell perovskite layer, a first adhesive film layer, a bottom cell crystalline silicon cell layer, a second adhesive film layer and back plate glass are sequentially laid on one side of the front plate glass; the edges of the top cell perovskite layer, the first adhesive film layer, the bottom cell crystalline silicon cell layer and the second adhesive film layer are wrapped and sealed through a composite frame, the composite frame comprises a substrate with the wall thickness of 0.1-2mm, the surface of the substrate is provided with an anodic oxide layer with the thickness of 4-6mu m, and the surface of the anodic oxide layer is covered with a polyimide layer with the thickness of 30-1mm. The laminated photovoltaic module adopts the composite frame to replace the existing butyl rubber for sealing, so that the metalized edge sealing is perfectly fused into the low-temperature laminating process, the sealing performance is superior to that of the butyl rubber, and the service life of the laminated photovoltaic module is prolonged.

The invention discloses a perovskite / crystalline silicon laminated cell based on polycrystalline silicon tunnel junction and interface modification, and belongs to the field of photovoltaic technology. The laminated cell is sequentially provided with a crystal silicon bottom cell, a polycrystalline silicon tunnel junction, an interface modification layer and a perovskite top cell from bottom to top. The polycrystalline silicon tunnel junction comprises an n-type polycrystalline silicon layer, an intrinsic layer and a p-type polycrystalline silicon layer from bottom to top; the doping concentration of the n-type polycrystalline silicon layer is gradually reduced towards the intrinsic layer, and the doping concentration of the p-type polycrystalline silicon layer is increased towards the direction far away from the intrinsic layer; the interface modification layer is arranged between the p-type polycrystalline silicon layer and the perovskite top cell; and the interface modification layer is adjacent to an electron transport layer of the perovskite top cell. Through the change design of the doping concentration of the polycrystalline silicon tunneling junction and the design of the interface modification layer and the hole transport layer, the problem of interface compatibility between the polycrystalline silicon tunneling layer and the perovskite top cell and the problem of poor stability of the laminated cell are solved, and the performance of the laminated cell is comprehensively improved.

The invention discloses a method for recycling high-value components of a solder strip in a decommissioned crystalline silicon photovoltaic module, belongs to the field of decommissioned photovoltaic material treatment and resource recycling, and the novel method for recycling the solder strip is efficient and has large-scale application potential. The recovery method comprises the steps that firstly, the surface of the welding strip is cleaned through alkali solution pretreatment, then a lead-tin coating on the surface of the welding strip is oxidized through a method of heat treatment in air, then the welding strip is soaked in an acid solution to remove surface oxides, then recovered solid products are washed with water and dried, and high-value components in the waste welding strip can be obtained. And further purifying and recycling. The method solves the problems of tedious operation method, low efficiency and the like during treatment of a traditional method. And meanwhile, the recovery route has a simple and convenient operation process, has large-scale application potential, and provides a large-scale application technical route and feasibility for recovery of the welding strip in the waste crystalline silicon photovoltaic module.

According to the crystalline silicon perovskite laminated cell and the preparation method thereof disclosed by the invention, a metal seed thin layer with a grid line pattern is introduced between a transparent conductive film and a grid line electrode of the laminated cell, so that on one hand, the contact resistance between the grid line electrode and the transparent conductive film can be greatly reduced; the contact resistance is reduced to 5% of the original contact resistance compared with that of a cell without a metal seed thin layer; and on the other hand, the binding force between the grid line and the transparent conductive film is improved, so that the ultralow-temperature curing slurry and the transparent conductive film can be fully bonded. In conclusion, the metal seed thin layer with the grid line pattern is introduced to achieve the purpose of improving the conversion efficiency and the stability of the crystalline silicon / perovskite laminated cell at the same time.

The invention discloses a perovskite / crystalline silicon laminated solar cell, a preparation method thereof and a photovoltaic module. The perovskite / crystalline silicon laminated solar cell provided by the invention comprises a perovskite top cell, a crystalline silicon bottom cell and a composite layer used for connecting the perovskite top cell and the crystalline silicon bottom cell, the perovskite top cell comprises a composite hole transport layer, the composite hole transport layer comprises a first hole transport layer and a second hole transport layer, and the first hole transport layer is in contact with the composite layer; the first hole transport layer is obtained by sputtering a nickel oxide target material by introducing H2 in an oxygen-free sputtering atmosphere, and the second hole transport layer is obtained by sputtering the nickel oxide target material in a hydrogen-free atmosphere. According to the perovskite / crystalline silicon laminated solar cell provided by the invention, the composite hole transport layer can realize better contact matching with the middle composite layer, better charge extraction and collection are carried out on the perovskite light absorption layer, and meanwhile, the perovskite / crystalline silicon laminated solar cell has better conductivity.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The application discloses a preparation of a low-temperature and low-bombardment transparent conductive film and application of the transparent conductive film in a perovskite / crystalline silicon laminated solar cell. The composite film is prepared by magnetron sputtering of TCO ceramic targets with different doping ratios at room temperature. ‑5 The composite transparent conductive oxide film is obtained by adjusting the sputtering pressure and power of the TCO film with different doping ratios and adjusting different growth modes, and the composite transparent conductive oxide film has a low-temperature and low-bombardment property. The lower layer of the composite transparent conductive oxide film is in a columnar crystal growth mode, and the upper layer is in an equiaxed large-grain growth mode. The composite transparent conductive oxide film can be applied in a perovskite / silicon laminated solar cell, can promote the vertical and horizontal transmission capacity of carriers in a TCO transparent electrode, promotes the effective collection and transmission of carrier charges, and thus a high-efficiency perovskite / silicon laminated solar cell is obtained.

The present disclosure relates to the technical field of solar cells. Disclosed are a solar cell, a preparation method therefor and a use thereof. A P-type doped region and an N-type doped region are alternately arranged on the back surface of a crystalline silicon substrate; a boron diffusion doped layer, a first passivation layer and a first anti-reflection layer are sequentially formed in the P-type doped region; and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second anti-reflection layer are sequentially formed on the surface of the crystalline silicon substrate in the N-type doped region. The P regions of traditional TBC cells mostly adopt a two-step process of depositing intrinsic amorphous silicon and performing boron diffusion to form a polycrystalline silicon layer. However, the P region of the present disclosure does not contain a polycrystalline silicon layer, and can be prepared by a one-step boron diffusion process, which can reduce the process steps and shorten the process time. The interaction between laser and the polycrystalline silicon in the P region is also avoided, the difficulty of cell patterning is reduced, and the production yield of cells can be greatly improved.

Semiconductor devices (e.g., gate-all-around (GAA) devices), processing tools for fabricating GAA devices, methods for fabricating GAA devices, and internal spacer liners and internal spacers for GAA devices are described. The methods include forming an internal spacer liner within a superlattice structure formed on an upper surface of a semiconductor substrate. The superlattice structure has a plurality of recessed semiconductor material layers (e.g., silicon germanium (SiGe)) and a corresponding plurality of channel layers (e.g., silicon (Si)) arranged alternately in a plurality of stacked pairs. The internal spacer liner includes a crystalline silicon-containing liner formed by a selective epitaxial growth (SEG) process. The crystalline silicon-containing liner can be doped with a dopant (e.g., with a p-type dopant or an n-type dopant). One or more steps of the methods described herein are performed in situ in an integrated processing tool system.

The embodiment of the invention provides a back contact crystalline silicon solar cell and a back contact photovoltaic module, the back contact crystalline silicon solar cell comprises a crystalline silicon substrate, the back surface of the crystalline silicon substrate is alternately provided with a first region and a second region, and the first region comprises a current collection region and a lamination region; in the collector region, the back surface of the crystalline silicon substrate is sequentially provided with a doped internal expansion layer, a first interface passivation layer, an N-type doped polycrystalline silicon layer, a transparent conductive oxide layer and a first back electrode, and a plurality of protruding structures are distributed on the surface of the N-type doped polycrystalline silicon layer. The contact area between the protruding structure and the first back electrode through the transparent conductive oxide layer is increased, so that the transmission resistance loss of carriers transported from the crystalline silicon substrate to the first back electrode is reduced, and the photoelectric conversion efficiency of the back contact crystalline silicon solar cell is improved.

The invention relates to an MEMS-CMOS device vertical interconnection integrated packaging preparation method, which comprises the following steps of: processing a TSV (Through Silicon Via) on a first silicon wafer (3), and filling crystalline silicon (2a); respectively processing a CMOS circuit layer and an RDL layer on the first silicon wafer, and processing a germanium bonding point (8) on the other surface of the first silicon wafer; a second SOI silicon wafer (10) and a third SOI silicon wafer (11) are fused and bonded to form a cavity (9), an aluminum / titanium / aluminum bonding point (12) is prepared on the third silicon wafer, an MEMS movable microstructure (13) is prepared on the third silicon wafer, the metal aluminum / titanium / aluminum bonding point and the MEMS movable microstructure are electrically connected, and the aluminum-germanium bonding point of the first silicon wafer and the aluminum-germanium bonding point of the third silicon wafer are subjected to eutectic bonding. According to the invention, the size of an integrated packaging chip of the MEMS device and the CMOS processing circuit is greatly reduced, and meanwhile, the RDL structure can realize wafer-level bonding packaging without considering the types, layout and size of the MEMS device and the CMOS circuit.

The invention discloses a preparation method and application of a low-temperature photovoltaic welding strip, and belongs to the technical field of energy conservation and environmental protection. According to the technical scheme, the method comprises the steps that a metal precursor is dissolved in an alcoholic solution, and a nano reinforced phase is prepared through regulation and control of a surfactant, ultrasonic treatment and aging calcination; the composite solder is prepared through argon smelting according to 1-6 parts of Sn, Bi, Ag, Ni, Cu, Ge, the modified glass powder and the nano reinforced phase; 99.95% electrolytic copper is subjected to vacuum melting and cold rolling to form a copper strip; the surface roughness is controlled through alkali washing degreasing and acid washing micro-etching; immersing the preheated copper strip into a molten pool for plating; and carrying out heat preservation and rosin protection treatment. According to the method, low-temperature welding at the temperature of 150-220 DEG C is achieved, an Ag-Sn intermetallic compound layer is formed after welding, the pull-off strength retention rate of a welding spot is larger than or equal to 80% after 200 times of thermal cycles, and the method is suitable for interconnection of crystalline silicon photovoltaic battery pieces.

The invention discloses a perovskite crystalline silicon laminated cell structure and a preparation method thereof, the structure comprises a crystalline silicon bottom cell, a nanometer tunneling layer and a perovskite top cell which are arranged in sequence from bottom to top, and the nanometer tunneling layer is of a non-full coverage structure. By implementing the structure, the performance of the crystalline silicon / perovskite laminated solar cell can be improved, a perovskite film forming technology suitable for a suede crystalline silicon substrate is developed, the design of the middle tunneling layer is optimized to reduce light loss and non-radiative recombination loss, and the photoelectric performance and stability of the laminated solar cell are remarkably improved.

The invention provides an alcohol ether polymer, a preparation method thereof and a cutting fluid containing the alcohol ether polymer. The alcohol ether polymer comprises a polymer as shown in a general formula I, a is 3-5, and b is 0-2. When the alcohol ether polymer provided by the invention is added into the crystalline silicon cutting fluid, in the silicon wafer preparation process, the wire breakage rate is low, the smudginess rate is low, the TTV of the silicon wafer is small, and the yield is high.

The invention provides low-temperature sintered silver-copper slurry, a perovskite laminated cell and a preparation method, and belongs to the technical field of crystalline silicon cells. The low-temperature sintered silver-copper paste comprises the following components in parts by mass: 15-30 parts of silver powder; 63-77 parts by mass of silver coated copper powder; the surface of the silver-coated copper powder is coated with acrylic acid and an oleylamine coating agent; 3-15 parts by mass of a resin; 0.2 to 2.8 parts by mass of a curing agent; 0.05 to 0.5 part by mass of a leveling agent; and 0.05 to 0.5 part by mass of a dispersant. The present disclosure achieves low temperature (llt; in addition, the silver-coated copper powder and the silver powder are mixed, the silver powder is replaced with low cost, the material cost is reduced, meanwhile, the silver-coated copper powder forms a three-dimensional conductive network at the low temperature of less than 120 DEG C through metal bonding of a silver shell and contact between particles, and the high conductivity of the electrode is ensured.

The invention provides a silicon wafer polishing solution, a silicon wafer polishing method thereof, a silicon wafer and a solar cell. The silicon wafer polishing solution comprises first inorganic particles, second inorganic particles, ammonium persulfate, sophorolipid and a solvent, the particle size of the first inorganic particles is smaller than that of the second inorganic particles, and the silicon wafer polishing solution is alkaline. Therefore, the silicon wafer can be polished in a mode of simultaneously carrying out chemical etching and mechanical grinding on the silicon wafer, the concave-convex height difference of line marks on the surface of the silicon wafer can be effectively reduced, even no obvious line marks penetrating through the silicon wafer exist, and then the surface flatness of the silicon wafer is improved; when a silicon wafer polished by the polishing solution is used for a perovskite / crystalline silicon laminated cell, the deposition quality of a thin film in the perovskite top cell can be effectively improved, and the overall efficiency of the cell is further improved.

The invention discloses a crystalline silicon plate side edge polishing device, and relates to the technical field of crystalline silicon plate processing, the crystalline silicon plate side edge polishing device comprises a rack, the top of the rack is provided with a main conveyor belt and a polishing device used for polishing the side wall of a crystalline silicon plate, the rack is provided with a chain scraper conveyor, and the chain scraper conveyor corresponds to the polishing device in position; and an adsorption assembly for adsorbing and positioning the bottom surface of the crystal silicon plate is mounted on the chain scraper conveyor. Through the arrangement of the adsorption assembly, when the crystalline silicon plate is conveyed to the polishing device to be polished, vertically downward adsorption force is provided for the crystalline silicon plate, friction force between the crystalline silicon plate and the main conveying belt is increased, and meanwhile adsorption positioning is formed for the bottom of the crystalline silicon plate; therefore, the possibility that the crystalline silicon plate slides and deflects when the crystalline silicon plate makes contact with the polishing disc is reduced, and it is ensured that the crystalline silicon plate is stabilized on a preset constant polishing path.

The invention provides a high-performance silicon negative electrode material prepared from modified photovoltaic crystalline silicon waste and a preparation method of the high-performance silicon negative electrode material, and belongs to the technical field of lithium ion battery silicon negative electrodes. The method comprises the following steps: adding the photovoltaic crystalline silicon waste into acid liquor for acid leaching and impurity removal, and drying to obtain pretreated silicon powder; transferring into a fluidized bed ALD reaction cavity, regulating and controlling the air flow fluidization speed, alternately introducing a metal precursor source and an oxygen source, and purging redundant products to obtain silicon / metal oxide powder; and alternately introducing a lithium source and a fluorine source, and purging redundant products to obtain silicon / metal oxide / lithium fluoride powder. And the deposited metal oxide not only can slow down the volume expansion of the silicon waste material in the charging and discharging process, but also can effectively stabilize the SEI layer and slow down the crushing and reconstruction of the SEI layer and the consumption of lithium, so that the cycling stability of the lithium ion silicon-based negative electrode is improved. The lithium fluoride coating can be beneficial to construction of stable SEI, and the SEI layer rich in lithium fluoride can provide a fast ion channel, so that the material has excellent rate capability.

The present invention addresses the problem of providing a tandem solar battery (1) having a simple configuration and exceptional battery performance. A tandem solar battery (1) that solves the aforementioned problem includes a first solar battery cell (CB1) that includes a first light absorption layer (10) containing n-type or p-type crystal silicon, a titanium oxide layer (31) that is disposed on the first light absorption layer (10) and contains amorphous titanium oxide, an intermediate layer (32) that is disposed adjacent to the titanium oxide layer (31) and contains tin oxide or titanium nitride having a higher nitrogen composition than the titanium oxide layer (31), and a second solar battery cell (CT1) disposed on the intermediate layer (32).

The invention discloses a benzotriazole light conversion material, a preparation method and application of the benzotriazole light conversion material in preparation of a solar cell packaging film. When a light conversion packaging film formed based on the benzotriazole light conversion material is attached to an organic solar cell, a dye-sensitized solar cell, a crystalline silicon solar cell, a perovskite solar cell and a laminated cell composed of the perovskite cell and the crystalline silicon cell, the ultraviolet stability of the solar cell can be improved; and the power conversion efficiency of the solar cell can be maintained.

The photovoltaic module comprises a back contact cell main body and a light storage layer, the back contact cell main body comprises a back contact cell and a light conversion layer, the light conversion layer is arranged on the light receiving surface of the back contact cell, the light storage layer is connected with the back contact cell main body through a hinge structure, and the light storage layer can at least partially cover the light conversion layer. The light conversion layer can convert ultraviolet light and long-wave infrared light which are difficult to absorb by crystalline silicon into high-response visible light / near-infrared light, so that the effective incidence and absorption efficiency of front light is improved; the light storage layer is connected to the back contact cell main body in a hinge structure mode, the light storage layer can be opened through the hinge structure to effectively store sunlight under high illumination intensity, then the hinge structure at least partially covers the light conversion layer, the stored energy can drive the light conversion layer to release high-response photons, and the light conversion layer can release high-response photons. An effective light source is continuously provided for the back contact battery, and the daily effective power generation duration is prolonged.