351 results about "Photovoltaic conversion efficiency" patented technology

The invention is a generator for photovoltaic conversion of concentrated sunlight into electricity. A generator according to the invention incorporates a plurality of photovoltaic cells and is intended for operation near the focus of a large paraboloidal reflector pointed at the sun. Within the generator, the entering concentrated light is relayed by secondary optics to the cells arranged in a compact, concave array. The light is delivered to the cells at high concentration, consistent with high photovoltaic conversion efficiency and low cell cost per unit power output. Light enters the generator, preferably first through a sealing window, and passes through a field lens, preferably in the form of a full sphere or ball lens centered on the paraboloid focus. This lens forms a concentric, concave and wide-angle image of the primary reflector, where the intensity of the concentrated light is stabilized against changes in the position of concentrated light entering the generator. Receiving the stabilized light are flat photovoltaic cells made in different shapes and sizes and configured in a concave array corresponding to the concave image of a given primary reflector. Photovoltaic cells in a generator are also sized and interconnected so as to provide a single electrical output that remains high and stable, despite aberrations in the light delivered to the generator caused by, for example, mispointing or bending of the primary reflector. In some embodiments, the cells are set back from the image formed by the ball lens, and part of the light is reflected onto each cell small secondary reflectors in the form of mirrors set around its perimeter.

The invention discloses a large-area polymer solar cell and a method for preparing an active layer of the large-area polymer solar cell to solve the technical problems that in the prior art, an active layer prepared through a spin coating process is small in area, can not meet the preparation requirements for a large-area cell module and a series-connection module, and is not suitable for industrial production, and belongs to the technical field of solar cells. The method includes the steps of firstly, dissolving electron donor materials and electron acceptor materials in organic solvents, conducting heating and stirring, and obtaining an evenly-mixed solution; secondly, adding additives to the mixed solution, and obtaining spraying ink of the active layer; thirdly, adding the spraying ink to an ultrasonic spraying instrument, and obtaining the active layer of the polymer solar cell in the spraying process through in-situ atmosphere processing. By means of the method, the active layer of the large-area polymer solar cell can be prepared in the atmosphere environment, and it is ensured that the active layer of the large-area polymer solar cell has high photovoltaic conversion efficiency.

The invention relates to an organic solar battery and a preparation method of the organic solar battery. The organic solar battery comprises a positive electrode, a hollow hole transmission layer, an active layer, an electronic transmission layer and a negative electrode, wherein the positive electrode and the negative electrode are transparent electrodes, the active layer comprises an organic donor material, an organic receptor material and quantum dot nanometer particles, and the quantum dot nanometer particles account for 0.1 to 10 weight percent of the active layer. The organic solar battery adopts the technical scheme that the quantum dot nanometer particles with the wavelength emitting spectrum identical to the absorption spectrum of organic semiconductor materials are doped in the active layer, the absorption spectrum of the organic semiconductor materials on sun light is widened, the utilization rate of the organic solar battery on the sun light is enhanced, and the photovoltaic conversion efficiency of the organic solar battery is obviously improved.

The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.

The invention provides a one-dimensional photonic crystal selective radiator which comprises a base body material and two types of dielectric materials including multiple periods of erbium-doped silicon dioxide films and silicon films alternatively deposited on the base body material. The base body material is silicon. The first-layer films deposited on the base body material are erbium-doped silicon dioxide films. The one-dimensional photonic crystal selective radiator integrates characteristic radiation of rare earth ions and a spectrum control feature of a photonic crystal to obtain selective radiation characteristic with excellent performance, remarkably improves the photovoltaic conversion efficiency of TPV and STPV systems and further has the advantages of being simple in structure, mature in preparation method and the like.

The invention discloses a multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode. A bottom layer is a multi-level hole TiO2 thin film prepared on a transparent conductive substrate. A middle layer is an I-III-VI-group quantum dot thin film. A secondary upper layer is a semiconductor oxide barrier layer. An upmost layer is a dye layer. The invention further discloses a preparation method of the multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode. The method comprises the steps of firstly, preparing the bottom layer, namely the multi-level hole TiO2 thin film, on the conductive substrate, then, preparing the I-III-VI-group quantum dot thin film, namely the middle layer thin film, on the multi-level hole TiO2 thin film by means of the chemical sedimentation method or the continuous ionic adsorption method, then preparing the secondary upper layer, namely the semiconductor oxide barrier layer, on the middle layer, namely the I-III-VI-group quantum dot thin film, by means of the dipping film-drawing method, and finally soaking the lamination layers in a dye solution to obtain the upmost layer, namely the dye layer. Compared with the prior art, the multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode is of the multi-level hole structure, and has the high specific surface area, dispersion and adsorption of dye and an electrolyte are facilitated, sunlight of different spectra is absorbed due to the synergistic effect of the lamination structure, the absorption spectrum range is broadened, and the photovoltaic conversion efficiency of a solar cell is improved.

The present invention relates to a silicon solar cell module comprising electrodes formed from conductive paste. In the invention, front electrode finger lines and front electrode bus bars are separately formed. The front electrode finger lines are formed by printing a silver paste and calcining the printed silver paste at high temperature, and rear electrode bus bars and front electrode bus bars are formed from an inexpensive lower-temperature conductive paste including a buffer and a curing agent having reducing power, whereby the expensive silver paste is replaced with the inexpensive low-temperature conductive paste, thereby reducing the production cost. Because the front electrode bus bars formed from the conductive paste do not come into contact with the silicon substrate, the area of contact between the silicon substrate and the front electrode is reduced, and thus the decrease in electric current caused by the recombination of electrons and holes resulting from this contact is inhibited, thereby increasing the photovoltaic conversion efficiency of the cell. Also, when the conductive paste is used, the rear electrode and front electrode bus bars are calcined at low temperature, and thus the occurrence of cracks in the silicon substrate is reduced, thereby preventing a decrease in the photovoltaic conversion efficiency of the silicon solar cell and increasing the yield of the cell.

The invention relates to a manufacture system of an anti-reflection structure on the surface of a solar cell and a manufacture method thereof, which is characterized in that a plurality of coherent laser beams are combined by a laser interference lithography system to modulate the light intensity distribution in an interference field; the material surface of a photovoltaic cell device is ablated with redistributed laser energy after modulation; and micro or nano-stage dense hole and column relief structures are generated in a large-area range so as to reduce the reflectivity, enhance the light absorption and improve the photovoltaic conversion efficiency. Lacking of external materials, the anti-reflection fine structure generated on the substrate surface by using the method is more stableand durable, and the cycle and the size of the structure can be adjusted by adjusting the incidence angle of the interference lithography system so that the received wavelength has better pertinence and has the advantage of good working band controllability.

The invention discloses a perovskite solar cell based on a PVA modified hole transport layer. The perovskite solar cell comprises a lower transparent electrode layer and an upper electrode layer, wherein five functional layers are clamped between the lower transparent electrode layer and the upper electrode layer; the five functional layers comprise a hole transport layer, a PVA interface modification layer, a perovskite active layer, an electron transfer layer and a buffer layer from bottom to top in sequence; and the hole transport layer, the PVA interface modification layer, the perovskiteactive layer and the electron transfer layer are prepared into a film through a low-temperature solution method. The thin film is prepared by using the low-temperature solution method, the technological conditions are reasonably controlled, and the PVA modification layer is added between a PEDOT:PSS layer and a perovskite layer, the perovskite surface wettability is improved effectively, the holetransport efficiency is improved, the perovskite thin film is obtained continuously and uniformly, the quality of a perovskite absorbed layer is improved, and the obtained perovskite solar cell is high in photovoltaic conversion efficiency and high in stability.

The invention discloses nano silicon boron slurry and a method for preparing N type composite emitter and an improved P type solar cell with the nano silicon boron slurry. The nano silicon boron slurry is used as a carrier, and local boron adulteration of the grating line coverage area of the solar cell back through laser or high-temperature treatment can be realized. The method is combined with the aluminum paste sintering process to prepare an N-type composite emitter cell when an N type cell is produced so that the problems that the ordinary aluminum paste sintering process only forms emitters in the aluminum paste coverage area and the emitters in the silver grating line coverage area are not continuous can be solved, and the photovoltaic conversion efficiency of the N type aluminum emitter cell is improved. The method is combined with the original aluminum paste sintering process to prepare the improved P type cell when the P type cell is produced so that the problems that the original P type cell only forms a back surface field in the aluminum slurry coverage area and the back surface field in the silver grating line coverage area is not continuous can be solved.

The invention discloses a porous submicron sphere, a porous film electrode and a preparation method and the application in dye sensitized solar cells thereof. The submicron sphere is in a porous structure formed by nano TiO2 particles, the pore diameter ranges from 5nm to 50nm, the grain diameter of the TiO2 particles ranges from 10nm to 100nm, the diameter of the submicron sphere ranges from 150nm to 1000nm, and the BET specific surface area is controlled to range from 80m2/g to 200m2/g. The porous submicron sphere formed by titanium dioxide nano particles is in a distribution of monodisperse and wide-diameter, and the structure is large in specific surface area, higher in scattering capacity to visible lights and quicker in electronic transmission performance inside the sphere, so that the porous film electrode has larger light scattering capacity and dye adsorption capacity. When the porous submicron sphere and the porous film electrode are applied to fields of photocatalysis and photovoltaic conversion, light use ratio and electron collection rate can be increased, and the dye sensitized solar cells can obtain higher photovoltaic conversion efficiency and save TiO2 usage.

The invention discloses a preparation method of a ZnO composite photo-anode of a dye-sensitized solar cell. The preparation method includes the steps of firstly, growing a ZnO nanometer wire array on a conductive substrate, and then growing and filling ZnO nanometer particles in situ in gaps between nanometer wires. By means of the preparation method, the specific area of the ZnO composite photo-anode is enlarged, and therefore the photovoltaic conversion efficiency of the photo-electrode is remarkably improved; meanwhile, the nanometer wires grow in a specific direction perpendicular to the substrate, and therefore the electronic transmission speed can be increased. In addition, the preparation method is easy to operate, free of sintering, short in response time when the nanometer particles grow in the gaps of the ZnO nanometer wire array, capable of reducing cost and beneficial to industrial production of the photo-anode. Due to the advantages of the photo-anode of the dye-sensitized solar cell, the dye-sensitized solar cell with the ZnO composite photo-anode can be widely applied to the solar cell field.

The invention discloses a reflective light-gathering solar photovoltaic electricity-generating component, which comprises a primary reflector, a secondary reflector, a transparent protective cover plate, photovoltaic cells, a conductive connecting line, a radiator base plate and a frame. The primary reflector thereon is provided with more than one group of trough parabolic reflecting mirror surfaces, one trough parabolic reflecting mirror surface is correspondingly provided with a secondary reflector, and each secondary reflector thereon is provided with a strip curved reflecting mirror surface, and the bottom of each trough parabolic reflecting mirror surface is corresponding to a photovoltaic cell. The strip curved reflecting mirror surfaces and the trough parabolic reflecting mirror surfaces are matched and used for forming light-gathering illumination with the same radiation strength on the surfaces of the photovoltaic cells, so as to improve the photovoltaic conversion efficiency of ordinary photovoltaic cells of unit area, even obtain higher fold of light-gathering ratio, and reach the purpose of using less photovoltaic cells under the condition of given power, so that the total cost of a photovoltaic electricity-generating system is reduced.

The invention provides a compound type embossing photovoltaic welding strip. The compound type embossing photovoltaic welding strip comprises a strip-shaped conductive substrate which is welded with a main grid line of a solar cell plate; a plurality of specially-shaped metal wires capable of reflecting light are put on one side of the upper surface of the strip-shaped conductive substrate; the lengths of the specially-shaped metal wires are not greater than the maximum length of the solar cell plate. Furthermore, the specially-shaped metal wires have sections which are shaped like isosceles triangles with top angles being greater than 90 degrees; furthermore, the sections of the specially-shaped metal wires are semicircular; furthermore, the specially-shaped metal wires are parallelly arranged on the strip-shaped conductive substrate; furthermore, the specially-shaped metal wires are made of pure copper or pure silver; if the specially-shaped metal wires are made of pure copper, a layer of soldering tin is plated on the outer surface of each specially-shaped metal wire. The invention also discloses a machining method for combining the compound type embossing photovoltaic welding strip with solar cells through serially welding machining. According to the compound type embossing photovoltaic welding strip, the strength for welding the photovoltaic welding strip with back electrodes of the solar cells can be improved; meanwhile, the photovoltaic conversion efficiency is improved.