The invention discloses a multi-level hole TiO2 /
quantum dot / dye lamination thin-film
solar cell photo-
anode. A bottom layer is a multi-level hole TiO2 thin film prepared on a transparent conductive substrate. A middle layer is an I-III-VI-group
quantum dot thin film. A secondary upper layer is a
semiconductor oxide barrier layer. An upmost layer is a dye layer. The invention further discloses a preparation method of the multi-level hole TiO2 /
quantum dot / dye lamination thin-film
solar cell photo-
anode. The method comprises the steps of firstly, preparing the bottom layer, namely the multi-level hole TiO2 thin film, on the conductive substrate, then, preparing the I-III-VI-group
quantum dot thin film, namely the middle layer thin film, on the multi-level hole TiO2 thin film by means of the chemical
sedimentation method or the continuous
ionic adsorption method, then preparing the secondary upper layer, namely the
semiconductor oxide barrier layer, on the middle layer, namely the I-III-VI-group
quantum dot thin film, by means of the dipping film-drawing method, and finally soaking the lamination
layers in a dye solution to obtain the upmost layer, namely the dye layer. Compared with the prior art, the multi-level hole TiO2 /
quantum dot / dye lamination thin-film
solar cell photo-
anode is of the multi-level hole structure, and has the high specific surface area, dispersion and adsorption of dye and an
electrolyte are facilitated,
sunlight of different spectra is absorbed due to the synergistic effect of the lamination structure, the absorption spectrum range is broadened, and the
photovoltaic conversion efficiency of a solar
cell is improved.