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Dye-sensitized solar cell and preparation method of ZnO composite photo-anode of dye-sensitized solar cell

A technology of solar cells and dye sensitization, applied in the field of solar cells, can solve the problems of long reaction time, low photoelectric conversion efficiency, slow electron transmission of ZnO nanocomposite structure photoanode, etc., achieve short reaction time, improve photoelectric conversion efficiency, The effect of increasing the electron transfer rate

Active Publication Date: 2014-04-16
SHENZHEN UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a ZnO nanocomposite structure photoanode for dye-sensitized solar cells, aiming to solve the reaction time of filling ZnO nanoparticles in the gaps of ZnO nanowire arrays in the prior art Long, and the ZnO nanocomposite structure photoanode has slow electron transport and low photoelectric conversion efficiency technical problems

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preparation example Construction

[0020] An embodiment of the present invention provides a method for preparing a ZnO composite photoanode for a dye-sensitized solar cell, comprising the following steps:

[0021] S01. depositing a ZnO nanoparticle layer on a conductive substrate;

[0022] S02. With the ZnO nanoparticle layer prepared above facing down, the conductive substrate carrying the ZnO nanoparticle layer is horizontally suspended in Zn salt solution and reacted at a temperature of 80°C to 95°C, so that the ZnO nanoparticle layer surface grows ZnO nanowire array;

[0023] S03. With the above-mentioned ZnO nanowire array facing down, suspend the conductive substrate loaded with the ZnO nanowire array horizontally in the polyol solution of Zn salt and react at a temperature of 130°C to 220°C until the solution is milky white and the reaction is completed , and then wash and dry the product to obtain a ZnO composite photoanode for a dye-sensitized solar cell.

[0024] In all the steps of the embodiment o...

Embodiment 1

[0045] Figure 1~3 A scanning electron microscope image of the ZnO composite photoanode of the dye-sensitized solar cell prepared in Example 1 is provided, wherein, 1 represents a nanowire, and 2 represents a nanoparticle. Correspondingly, the method for preparing the ZnO composite photoanode of the dye-sensitized solar cell comprises the following steps:

[0046] S11. Dissolve zinc acetate dihydrate and monoethanolamine in ethylene glycol methyl ether at a molar ratio of 1:1 to prepare a zinc acetate solution with a concentration of 0.075mol / L, seal it and place it in a water bath with a constant temperature of 60°C for magnetic stirring for 3 Hours, a colorless transparent sol was obtained, which was left to stand for 24 hours before use; the colorless transparent sol was spin-coated on the cleaned FTO conductive glass at a speed of 5000r / min, and then heat-treated at 300°C for 30 minutes. The coating-heat treatment step was repeated 3 times; finally, heat treatment was per...

Embodiment 2

[0050] A preparation method of a dye-sensitized solar cell ZnO composite photoanode, which is basically the same as the steps of the above-mentioned embodiment 1, the difference is that in the S22 step of the present embodiment, the aqueous solution of zinc nitrate hexahydrate and hexamethylenetetramine The concentration was changed to 0.025mol / L, and a ZnO nanowire array with a length of about 6.0 μm was obtained.

[0051] That is, the specific operation of S22 is as follows:

[0052] Aqueous solutions of 0.025 mol / L zinc nitrate hexahydrate and 0.025 mol / L hexamethylenetetramine were respectively prepared, mixed in equal volumes, and then used as a growth solution for growing ZnO nanowire arrays and put into glass bottles with screw caps. Suspend the above-mentioned FTO conductive glass deposited with the ZnO nanoparticle layer in the growth solution with the ZnO nanoparticle layer facing down, close the bottle cap tightly, put it in an oven and heat it at a constant tempera...

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Abstract

The invention discloses a preparation method of a ZnO composite photo-anode of a dye-sensitized solar cell. The preparation method includes the steps of firstly, growing a ZnO nanometer wire array on a conductive substrate, and then growing and filling ZnO nanometer particles in situ in gaps between nanometer wires. By means of the preparation method, the specific area of the ZnO composite photo-anode is enlarged, and therefore the photovoltaic conversion efficiency of the photo-electrode is remarkably improved; meanwhile, the nanometer wires grow in a specific direction perpendicular to the substrate, and therefore the electronic transmission speed can be increased. In addition, the preparation method is easy to operate, free of sintering, short in response time when the nanometer particles grow in the gaps of the ZnO nanometer wire array, capable of reducing cost and beneficial to industrial production of the photo-anode. Due to the advantages of the photo-anode of the dye-sensitized solar cell, the dye-sensitized solar cell with the ZnO composite photo-anode can be widely applied to the solar cell field.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a dye-sensitized solar cell and a method for preparing a ZnO composite photoanode. Background technique [0002] Dye-sensitized solar cells (DSSC) are a new type of solar cell with low cost and high conversion efficiency. Since the research team led by the professor made a breakthrough in this field, it has triggered extensive and continuous research booms all over the world. For solar cells, the generation and recombination of photogenerated carriers are the key factors that determine the photoelectric conversion efficiency of the cell. exist In the DSSC structure originally proposed by the group, the porous nano-TiO 2 The particle film is used as a photoanode, but in this electrode, due to the existence of a large number of grain boundaries and defects, the electron transport speed is very slow, and the probability of electron-hole recombination is high. These factors limit the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042B82Y40/00
CPCY02E10/542Y02P70/50
Inventor 柳文军韩舜唐丽贾芳曹培江朱德亮马晓翠吕有明
Owner SHENZHEN UNIV
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