8507 results about "Nanowire" patented technology

Methods for forming nanostructures of various shapes are disclosed. Nanocubes, nanowires, nanopyramids and multiply twinned particles of silver may by formed by combining a solution of silver nitrate in ethylene glycol with a solution of poly(vinyl pyrrolidone) in ethylene glycol. Hollow nanostructures may be formed by reacting a solution of solid nanostructures comprising one of a first metal and a first metal alloy with a metal salt that can be reduced by the first metal or first metal alloy. Nanostructures comprising a core with at least one nanoshell may be formed by plating a nanostructure and reacting the plating with a metal salt.

The present invention relates to nanostructured materials (including nanowires) for use in batteries. Exemplary materials include carbon-comprising, Si-based nanostructures, nanostructured materials disposed on carbon-based substrates, and nanostructures comprising nanoscale scaffolds. The present invention also provides methods of preparing battery electrodes, and batteries, using the nanostructured materials.

The present invention comprises a novel process for the preparation of carbon based structured materials with controlled topology, morphology and functionality. The nanostructured materials are prepared by controlled carbonization, or pyrolysis, of precursors comprising phase separated copolymers. The precursor materials are selected to phase separate and self organize in bulk, in solution, in the presence of phase selective solvents, at surfaces, interfaces or during fabrication, into articles, fibers or films exhibiting well-defined, self-organized morphology or precursors of well-defined, self-organized, bi- or tri-phasic morphology. Compositional control over the (co)polymers provides control over the structure of the phase separated precursor whose organization therein dictates the nanostructure of the material obtained after carbonization or pyrolysis, wherein each dimension of the formed structure can be predetermined. When the precursor morphology is selected to comprise cylindrical domains this procedure additionally allows for the direct formation of two dimensional nanowire grids or arrays of oriented nanostructures on surfaces. When these nanowire grids or arrays are perpendicularly oriented to the surface applications include field emitters, high surface area electrodes, electronic devices such as diodes and transistors, tools for AMF tips and elements of molecular electronics. When the first nanostructured morphology is selected to form cylinders parallel to the surface then nanowire arrays are formed after pyrolysis. When the composition of the first nanostructured morphology is selected to comprise a continuous precursor matrix then a continuous carbon based nanostructured material is formed. The internal structure of the carbon based material can be selected to comprise perpendicular pores or an interconnected array of pores. The carbon based structures can additionally find application in photovoltaics, supercapacitors, batteries, fuel cells, computer memory, carbon electrodes, carbon foams, actuators and hydrogen storage.

The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of the substrate; (c) cleaving the stack normal to its major surface to expose the plurality of alternating layers; and (d) etching the exposed plurality of alternating layers to a chosen depth using an etchant that etches one material at a different rate than the other material to thereby provide the surface with extensive strips of indentations and form the platen useful for molding masters for nano-imprinting technology. The pattern of the platen is then imprinted into a substrate comprising a softer material to form a negative of the pattern, which is then used in further processing to form nanowires. The nanoscale platen thus comprises a plurality of alternating layers of the two dissimilar materials, with the layers of one material etched relative the layers of the other material to form indentations of the one material. The platen is then oriented such that the indentations are parallel to a surface to be imprinted.

A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.

Optical films formed by deposition of highly oriented nanowires and methods of aligning suspended nanowires in a desired direction by flow-induced shear force are described.

A dye-sensitized solar cell (DSSC) comprising nanoparticles formed on a surface of a nanowire formed on a substrate and a method of fabricating the same is disclosed. The dye-sensitized solar cell comprises a first substrate. A nanowire is formed on the first substrate. A plurality of nanoparticles is then contacted with a surface of the nanowire. The dye-sensitized solar cell further comprises a dye adsorbed onto a surface of the nanoparticles. A second substrate is corresponded to the first substrate. Finally, an electrolyte is filled between the first substrate and the second substrate, and in contact with the dye and nanoparticles. The nanoparticles are bonded to the surface of nanowire to extend and increase surface contact with the dye for promoting cell efficiency (η) of the dye-sensitized solar cell.

A semiconductor structure is provided that includes a plurality of vertically stacked and vertically spaced apart semiconductor nanowires (e.g., a semiconductor nanowire mesh) located on a surface of a substrate. One end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a source region and another end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a drain region. A gate region including a gate dielectric and a gate conductor abuts the plurality of vertically stacked and vertically spaced apart semiconductor nanowires, and the source regions and the drain regions are self-aligned with the gate region.

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Provided are nanostructures containing electrochemically active materials, battery electrodes containing these nanostructures for use in electrochemical batteries, such as lithium ion batteries, and methods of forming the nanostructures and battery electrodes. The nanostructures include conductive cores, inner shells containing active materials, and outer shells partially coating the inner shells. The high capacity active materials having a stable capacity of at least about 1000 mAh / g can be used. Some examples include silicon, tin, and / or germanium. The outer shells may be configured to substantially prevent formation of Solid Electrolyte lnterphase (SEI) layers directly on the inner shells. The conductive cores and / or outer shells may include carbon containing materials. The nanostructures are used to form battery electrodes, in which the nanostructures that are in electronic communication with conductive substrates of the electrodes.