1015 results about "Nanowire" patented technology

The invention discloses a light-moisture dual-curing underwater epoxy coating with a self-repairing function as well as a preparation method and a construction method of the light-moisture dual-curing underwater epoxy coating. The epoxy coating comprises a component A and a component B, wherein the mass ratio of the component A to the component B is (1.5-3.5): 1; the component A is prepared from the following raw materials: bisphenol F type epoxy resin, dynamic disulfide bond modified polysulfide rubber, boron nitride nanosheet and silicon carbide nanowire hybrid filler, a photoinitiator and a silane coupling agent; the component B is prepared from the following raw materials: moisture-cured polyether amine, a boric acid ester bond cross-linking agent and hydrophobic modified graphene oxide. According to the invention, a light-moisture dual-curing mechanism is adopted, ultraviolet irradiation initiates rapid surface curing, and then environmental moisture permeates to complete deep curing. The material provided by the invention has the advantages of rapid curing, excellent self-repairing function, significantly improved underwater adhesion and good thermal conductivity, and provides a new solution for rapid repairing and long-acting protection of underwater structures.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention discloses a temperature control system and method of a micro-fluidic chip, and relates to the technical field of micro-fluidic temperature control, and the method comprises the following steps: in the manufacturing process of the micro-fluidic chip, embedding topological insulator nanowires into a substrate in a directional arrangement mode to form a pre-locking array, and meanwhile, generating an anisotropic heat conduction network under the continuous action of a sound-magnetic field, a topological vortex invariant is calculated, and a heat conduction weight coefficient is generated; arranging a fluorescent layer on the surface of a micro-reaction cavity of the anisotropic heat conduction network, collecting a fluorescence lifetime attenuation curve in real time, and calculating a transient temperature value and a temperature change rate according to a heat conduction constraint variation model and a heat conduction weight system; nonlinear feed-forward compensation power is calculated according to the transient temperature value and the temperature change rate, feedback compensation power is calculated in combination with a deviation field of the target temperature and the real-time temperature, and a compensation power instruction is generated; according to the method, the thermal pilot frequency domain filtering function is constructed through the compensation power instruction, so that the uniformity and response speed of thermal response are improved.

The invention relates to the technical field of solid-state lithium ion batteries, in particular to a composite solid-state electrolyte diaphragm, a preparation method and an all-solid-state battery. According to the invention, a 3D ion / electron channel is constructed through a cellulose skeleton, an oxide electrolyte nanowire directional arrangement technology is adopted, and an in-situ interface lithium fluoride repairing layer is adopted, so that the industrialization bottleneck that high ion conduction-mechanical strength-interface stability is difficult to collaboratively optimize in the prior art is broken through; the common problems of insufficient bulk phase and interface ion conductivity, poor mechanical strength, poor compatibility with a high-nickel positive electrode / silicon carbon negative electrode and the like of a solid-state battery are effectively solved. The mass energy density of the prepared all-solid-state battery can reach 360 Wh / kg, the capacity retention ratio can still be maintained at 80% or above after 1100 times of circulation, and the all-solid-state battery successfully passes 190 DEG C thermal runaway and acupuncture tests and shows excellent safety performance and wide industrial application prospects.

The invention belongs to the technical field of conductive polymer materials, and particularly relates to a three-dimensional polypyrrole conductive material and a preparation method and application thereof. The preparation method of the three-dimensional polypyrrole conductive material comprises the following steps: (1) preparing a metal copper quantum dot and graphene oxide mixed dispersion liquid; (2) adding an oxidizing agent to obtain a reaction solution; (3) adding a pyrrole monomer, and carrying out a polymerization reaction to obtain a graphene oxide / polypyrrole composite dispersion liquid; and (4) adding a reducing agent to reduce the graphene oxide to obtain the three-dimensional polypyrrole conductive material. After the metal copper quantum dots are loaded on the graphene oxide sheet layer, the graphene oxide sheet layer becomes a structure-oriented core in subsequent polymerization, and finally the stable three-dimensional conductive composite material with graphene as a framework and polypyrrole nanosheets as connection points is formed. Compared with a traditional three-dimensional material formed by overlapping and integrating a two-dimensional graphene sheet layer and a conductive nanowire / nanorod, the three-dimensional material with the structure can form an efficient conductive path more easily under the condition of low filler content.

The invention relates to the technical field of wave-absorbing materials, in particular to a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material. The invention provides a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material, which comprises the following steps of: etching titanium aluminum carbide powder through a LiF / HCl mixture, and performing ultrasonic stripping to prepare a uniform dispersion of MXene nanosheets; the preparation method comprises the following steps: dispersing MXene nanosheets in a solution of water and absolute ethyl alcohol, and adding a pyrrole monomer and a FeCl3. 6H2O aqueous solution for reaction; after the reaction, washing is performed to obtain a PPy-MXene composite material; the preparation method comprises the following steps: by taking NiCl2. 6H2O as a nickel source and sodium oxalate as a precipitator, preparing NiO nanowires by adopting a hydrothermal method combined with a calcining process; the invention discloses a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material.According to the method, the MXene-NiO-PPy ternary composite wave-absorbing material with rich heterogeneous interfaces and a porous micro-nano structure is constructed, cooperation of dielectric loss, magnetic loss and interface polarization loss is achieved, and finally the light, efficient and broadband wave-absorbing performance is obtained.

The invention belongs to the technical field of adhesives, and particularly discloses a single-component silicone sealant for stainless steel bonding and a preparation method thereof, and the single-component silicone sealant comprises the following components by weight: 50-60 parts of alpha, omega-dihydroxy polydimethylsiloxane; 10 to 15 parts of a polydopamine coated silicon carbide nanowire; 5 to 15 parts of modified nano aluminum oxide gel; 5 to 10 parts of methyltris (methylethylketoxime) silane; 1 to 3 parts of dodecyl tris (methylethylketoxime) silane; 0.03 to 0.3 part of a coordination enhanced organic tin catalyst; and 8-14 parts of a plasticizer. According to the single-component silicone sealant for stainless steel bonding and the preparation method of the single-component silicone sealant, the modified nanometer aluminum oxide gel is selected, the bonding performance of stainless steel in a humid and hot environment is promoted and improved, the silicon carbide nanowire is coated with polydopamine, the bonding performance of the stainless steel is effectively improved, and the single-component silicone sealant can be widely applied to various indoor and outdoor scenes.

The invention discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, the superconducting rectifier comprises more than one superconducting diode, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowing section, and the narrowing section is provided with a narrow section. The narrowing section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged, and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. According to the invention, in-situ reconfigurable reversal symmetry destruction can be realized through a nanoscale hot spot controlled by a grid electrode; electrically controlled opening or closing and polarity reversal are realized by adjusting a small grid current without changing a magnetic field; the superconductive rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves a way for development of extensible and electrically programmable superconductive electronic devices.

Techniques for dielectric isolation in bulk nanosheet devices are provided. In one aspect, a method of forming a nanosheet device structure with dielectric isolation includes the steps of: optionally implanting at least one dopant into a top portion of a bulk semiconductor wafer, wherein the at least one dopant is configured to increase an oxidation rate of the top portion of the bulk semiconductor wafer; forming a plurality of nanosheets as a stack on the bulk semiconductor wafer; patterning the nanosheets to form one or more nanowire stacks and one or more trenches between the nanowire stacks; forming spacers covering sidewalls of the nanowire stacks; and oxidizing the top portion of the bulk semiconductor wafer through the trenches, wherein the oxidizing step forms a dielectric isolation region in the top portion of the bulk semiconductor wafer. A nanowire FET and method for formation thereof are also provided.

The invention relates to the technical field of fluorosilicone materials, in particular to a glass fiber sleeve with an excellent voltage resistance function and a preparation method of the glass fiber sleeve. The glass fiber sleeve with the excellent voltage-resistant function comprises a glass fiber sleeve and a composite coating coated on the outer side of the glass fiber sleeve, the composite coating is obtained by thermocuring a coating material; the coating material is prepared from the following raw materials in parts by mass: 50 to 100 parts of fluorinated silicone rubber emulsion, 1 to 5 parts of bis (3-aminopropyl) terminated polydimethylsiloxane, 0.5 to 1.5 parts of furfuryl alcohol resin, 1 to 5 parts of epoxy resin, 1 to 5 parts of activated nano silicon dioxide, 1 to 3 parts of boron nitride nanowire, 1 to 2 parts of dopamine hydrochloride, 1 to 2 parts of dispersing agent and 10 to 30 parts of solvent. The invention can effectively ensure that the coating forms a compact cross-linked structure in the curing process, and can enhance the adhesive force of the coating, weaken the temperature difference between the surface and the interior, inhibit the heat accumulation effect and delay the degradation of the insulating property.

A method for forming a semiconductor package includes providing a semiconductor chip containing a bond pad located on a top surface of the semiconductor chip, providing a carrier including a chip mounting pad and a landing pad, mounting the semiconductor chip onto the chip mounting pad with the bond pad facing away from the carrier, and attaching an electrical connecting element between the bond pad and the landing pad, wherein the bond pad is formed from nanowires.

Techniques are provided herein to form semiconductor devices having gate tie-down structures between the device gate and a buried / backside power rail (BPR). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure on a semiconductor region. The semiconductor region can be, for example, a fin or a set of one or more nanowires or nanoribbons that extends between a source region and a drain region. A BPR structure is beneath a dielectric layer that is between the BPR structure and the conductive material of the gate structure. A portion of the conductive material also extends through the dielectric material to provide a conductive via between the gate structure and the underlying BPR structure. The conductive material may be, for example, work function and / or metal fill material of the gate electrode of the gate structure.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

A wearable display system includes one or more nanowire LED micro-displays. The nanowire micro-LED displays may be monochrome or full-color. The nanowire LEDs forming the arrays may have an advantageously narrow angular emission profile and high light output. Where a plurality of nanowire LED micro-displays is utilized, the micro-displays may be positioned at different sides of an optical combiner, for example, an X-cube prism which receives light rays from different micro-displays and outputs the light rays from the same face of the cube. The optical combiner directs the light to projection optics, which outputs the light to an eyepiece that relays the light to a user's eye. The eyepiece may output the light to the user's eye with different amounts of wavefront divergence, to place virtual content on different depth planes.

The invention provides a surface modified carbon negative electrode material, a preparation method thereof and a battery. The preparation method comprises the following steps: mixing a graphite carbon source and a pore-forming agent, and graphitizing the obtained mixture to form porous graphite; performing oxidation treatment on the porous graphite to prepare porous graphite oxide particles; the porous graphite oxide particles are placed in a tin source solution containing tin cations, the tin source solution is attached to the surfaces of holes of the porous graphite oxide particles, and tin oxide attached to the surfaces of the holes of the porous graphite oxide particles is formed based on the tin source solution; and the porous graphite oxide particles are placed in a carbon-containing reducing gas environment to be subjected to calcination treatment, and the carbon-coated tin nanowires are prepared on the basis of the tin oxide. According to the preparation method, the surface and holes of the carbon negative electrode material are modified by adopting the carbon-coated tin nanowires, so that the discharge performance of the battery at relatively high rate can be effectively improved.

The invention relates to the technical field of conductive film substrate materials, in particular to a preparation method and application of a super-flexible stretchable conductive film substrate material. In order to solve the problems that an existing flexible conductive film is prone to fracture in the stretching process, a conductive layer is prone to stripping, and the conductive performance is seriously attenuated along with deformation, the invention provides a composite polyrotaxane enhanced matrix film which is capable of meeting the ultra-flexible and stretchable requirements. And an MXene-silver nanowire-polypyrrole ternary synergistic conductive network is combined, so that the problem that the conductivity is sharply attenuated in the deformation process is solved.

The application discloses a preparation method of mesoporous copper oxide and application thereof. The preparation method comprises the following steps: S1, preparing a hydroxyl copper nitrate microplate by taking calcium carbonate paper as a substrate and copper nitrate as a solvent; S2, synthesizing an ordered copper hydroxide nanowire assembly through an alkali solution reaction; and S3, performing annealing treatment in a muffle furnace to obtain the mesoporous copper oxide microplate. Under the conditions of no hard template, no soft template and no strong acid treatment, the application provides a method for synthesizing the mesoporous copper oxide microplate material with uniform pore structure on the carbonic paper by adopting copper nitrate hydrolysis, alkali etching and annealing, and the synthesis method of the mesoporous structure has the advantages of simple operation, good controllability and low cost. The application also relates to application of the mesoporous copper oxide as an electrocatalyst material in the field of glucose electrochemical sensing.

The invention relates to a structural wave-absorbing integrated ceramic-based composite material prepared based on 3D printing and a preparation method of the structural wave-absorbing integrated ceramic-based composite material. The preparation method of the structural wave-absorbing integrated ceramic matrix composite material comprises the following steps: mixing chopped silicon carbide fibers, a dispersant, a binder, a catalyst and a solvent to obtain chopped silicon carbide fiber slurry; the slurry is subjected to periodic array arrangement, printing and forming through 3D printing, and a silicon carbide fiber preform of a periodic structure is obtained through drying and glue discharging; inducing in-situ growth of the silicon carbide nanowire on the surface of the preform by using a catalyst introduced into the slurry by adopting CVI, and depositing a BN interface phase on the surface of the silicon carbide nanowire by adopting CVI to form a SiC / BN core-shell structure nanowire; dipping the prefabricated body into a polysilazane precursor, curing and cracking, and introducing a Si3N4 ceramic matrix into the prefabricated body; and repeating dipping, curing and cracking for 5-10 times to densify the composite material, thereby obtaining the structural wave-absorbing integrated ceramic matrix composite material.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

The invention relates to the field of advanced ceramic materials, in particular to a ceramic matrix composite (CMC) and a preparation method thereof. The technical problems that a traditional CMC preparation technology is long in period, poor in structural uniformity and insufficient in toughness are solved. According to the method, surface-modified aluminum oxide ceramic microspheres are used as reinforcements, the surfaces of the microspheres are sequentially modified with hexagonal boron nitride nanosheets and a metal nickel catalyst, the microspheres, silicon carbide nanoparticles and a polycarbosilane precursor are mixed to form slurry, and a complex component is formed through multi-material additive manufacturing. A green body is prepared by using a 3D printing technology combining photocuring and material extrusion; carrying out ultraviolet curing on the green body, and carrying out staged heat treatment in an inert atmosphere, so that the precursor polymer is subjected to cross-linking curing, and meanwhile, carbon nanowires grow through in-situ catalysis; and finally, sintering under a pressurizing condition to realize matrix densification. The preparation period is greatly shortened, and the obtained composite material is uniform in structure, compact in matrix and excellent in mechanical property.

Techniques are provided to form semiconductor devices with different inner spacer widths and different nanoribbon (e.g., or nanowire, or nanosheet) thickness. In an example, any number of first semiconductor devices include first gate structures around first semiconductor regions and any number of second semiconductor devices include second gate structures around second semiconductor regions. First dielectric inner spacers are provided between the first gate structure and the corresponding source or drain regions of the first semiconductor devices with a first width and second dielectric inner spacers are provided between the second gate structure and the corresponding source or drain regions of the second semiconductor devices with a second width that is greater than the first width. In some such examples, the first semiconductor regions may be thinner compared to the second semiconductor regions to cause a corresponding increase in the threshold voltage of the first semiconductor devices.

The invention belongs to the technical field of battery technologies, and provides nanowire solid-state composite electrolyte slurry and a preparation method and application thereof.The nanowire solid-state composite electrolyte slurry comprises inorganic ceramic nanowires, a high-molecular polymer material, lithium salt, ionic liquid and an organic solvent, the diameter of the inorganic ceramic nanowires is 220-260 nm, the inorganic ceramic nanowires are arranged in the nanowire solid-state composite electrolyte slurry in a disordered mode, and the inorganic ceramic nanowires are arranged in the high-molecular polymer material. In the solid-state battery, the nanowire solid-state composite electrolyte slurry is attached to two sides of a diaphragm in the form of a membrane. According to the nanowire solid-state composite electrolyte slurry disclosed by the invention, the nanowire filler with a high aspect ratio is utilized to optimize an inner interface of the solid-state composite electrolyte, so that the electrolyte has the advantages of relatively good thermal stability, electrochemical stability and high ionic conductivity, and is easy to form and process; the solid-state composite electrolyte is a novel solid-state composite electrolyte with excellent comprehensive performance, can be matched with lithium metal and a high-voltage positive electrode to construct a solid-state lithium battery with high specific energy and high safety, and is high in use value and good in application prospect.

Integrated circuit structures having stress-inducing gate cut plugs are described. For example, a structure includes a first vertical stack of horizontal nanowires or fin over a first sub-fin. A first gate structure is over the first vertical stack of horizontal nanowires or fin. A second vertical stack of horizontal nanowires or fin is over a second sub-fin. A second gate structure is over the second fin. A gate cut separates a first gate electrode of the first gate structure from a second gate electrode of the second gate structure. A gate cut fill structure is in the gate cut, the gate cut fill structure including a first dielectric material portion in contact with the first gate electrode, a conductive via portion, and a second dielectric material portion in contact with the second gate electrode. The conductive via portion separates the first dielectric material portion from the second dielectric material portion.

Techniques are provided herein to form an integrated circuit having different semiconductor devices with different features to cause opposite or otherwise different changes in the threshold voltage. For example, one or more first semiconductor devices include source or drain regions that extend laterally beneath a portion of the spacer structures to cause a decrease in the device threshold voltage, and one or more second semiconductor devices include thinned nanowires to cause an increase in the device threshold voltage. The one or more first FETs have source or drain regions that extend laterally inwards towards the nanoribbons between inner gate spacers, such that the interface between the source or drain regions and the nanoribbons is within a lateral width of the inner spacers. The one or more second FETs have nanoribbons with a smaller thickness within the gate trench compared to the nanoribbons of the one or more first FETs.

The invention discloses a grid-control superconducting nanowire low-temperature thermometer and a preparation method thereof, and relates to the technical field of superconducting electronics and low-temperature detection. Comprising a substrate and a superconducting layer, and the superconducting layer comprises a grid electrode, a superconducting nanowire and an inductor; the grid electrode is vertical to the superconductive nanowire, has a distance from the superconductive nanowire and is used for electric field regulation and control; the superconducting nanowire is connected with the inductor and is used for responding to particles injected into the grid electrode and outputting a pulse signal; the inductor is connected with the superconducting nanowire and is used for inhibiting a latch-up effect under high bias current; the superconducting layer material is a superconducting thin film material with a superconducting transition temperature Tc exceeding a measurement temperature zone; according to the invention, (quasi) particle injection in the critical current process of the superconducting nanowire is regulated and controlled through the grid electric field, high-precision measurement of the low temperature is realized in combination with nonlinear response of the pulse counting rate and the temperature, and the device and the method have the advantages of wide temperature zone measurement, low noise, high sensitivity, low power consumption, small self-heating, simple measurement system and low cost.

The invention relates to a silicon carbide-boron nitride three-dimensional heat conduction framework material and a preparation method and application thereof.The preparation method comprises the steps that boron nitride nanosheets are prepared into dispersion liquid, the pH of the dispersion liquid is adjusted through ammonia, then an organic silicon source is added for a reaction, and a precursor is obtained; the precursor comprises a boron nitride nanosheet and SiO2 nanoparticles loaded on the surface of the boron nitride nanosheet; mixing the precursor, polyamide acid and trimethylamine in a solvent, and performing freeze drying treatment to obtain composite aerogel; and sequentially carrying out thermal imidization treatment, carbonization treatment and carbon thermal reduction reaction on the composite aerogel to obtain the silicon carbide-boron nitride three-dimensional heat-conducting framework material. According to the preparation method, SiC nanowires are efficiently connected with BNNS to form a microstructure welded continuous heat-conducting network, and the prepared silicon carbide-boron nitride three-dimensional heat-conducting framework material has excellent heat conductivity, electric insulativity and flexibility when being used as a thermal interface material and is wide in application prospect.

The invention relates to a rock mechanics technology, in particular to a coal rock dynamic and static load self-adaptive multi-field coupling test device and a coal rock dynamic and static load self-adaptive multi-field coupling test method which are used for solving the problems that when coal rock mass in an unknown coal rock mass environment is mined, the conditions of mining difficulty, mine hole collapse and the like are likely to happen, and the surrounding environment is likely to be polluted. Comprising an axial loading device, a confining pressure loading system, a biaxial shearing system and a pore adjusting system, the coal-rock mass stress-temperature-seepage multi-physical field coupling test is realized through the pore gas loading system, the pore water loading system and the nano-coil high-temperature system, the phenomena of solid, liquid, gas and heat multiphase and polymorphic redistribution and migration of the coal-rock mass under the influence of mining disturbance are simulated, the problems of one-sided and inaccurate detection of an existing experimental instrument are solved, and the experimental efficiency is improved. A new test means is provided for revealing a coupling action mechanism of coal, gas and water under the three-dimensional stress condition, and a reliable test basis is provided for preventing and treating gas disasters and researching gas extraction.

The invention belongs to the technical field of hydrophobic electromagnetic shielding materials, and particularly relates to an asymmetric electromagnetic shielding composite film and a preparation method and application thereof. The PNTs are polypyrrole nanotubes, after Na2MoO4. 2H2O and CH4N2S are added and subjected to a high-temperature reaction, a MoS2 flower-shaped shell structure can grow on the PNTs, the layered structure and the high specific surface area of MoS2 contribute to enhancing scattering and absorption of electromagnetic waves, and rich defect sites can induce dielectric polarization to achieve dielectric loss. Introducing the PNTs (at) MoS2 core-shell nanowire as an electromagnetic wave absorbent into a polylactic acid / dichloromethane system, then putting the system into a culture container in which a conductive filler is pre-paved, and standing and volatilizing at room temperature by adopting an ethanol solution as a volatile agent to finally obtain a three-layer asymmetric electromagnetic shielding composite film comprising the conductive filler, the PNTs (at) MoS2 structure and a polylactic acid matrix from bottom to top. And an asymmetric conductive gradient network is constructed, and the EMI shielding performance which mainly focuses on absorption is remarkably improved, so that the secondary radiation problem of electromagnetic waves is reduced.

The invention belongs to the technical field of preparation of high-temperature heat-insulating and electromagnetic wave-absorbing materials, and relates to a bamboo-like silicon carbide nanowire based on freeze-dried vegetables / fruits and a preparation method and application of the bamboo-like silicon carbide nanowire based on the freeze-dried vegetables / fruits, and the preparation method comprises the following steps: putting the vegetables / fruits in a freeze dryer to obtain the freeze-dried vegetables / fruits; putting the freeze-dried vegetables / fruits into a high-temperature tubular furnace for carbonization to obtain a carbon template; putting the carbon template and a silicon source into a graphite crucible, putting the graphite crucible into a high-temperature tubular furnace, and calcining to obtain the bamboo-like silicon carbide nanowire based on the freeze-dried vegetables / fruits. The bamboo-like silicon carbide nanowire prepared by the method has excellent high-temperature heat insulation property and remarkable broadband electromagnetic wave absorption property, so that the enhancement of double functions of heat insulation and wave absorption is synergistically realized on the basis of a single material. The preparation process is simple and stable in flow, good in repeatability, green in raw material and extremely low in cost, and the problems of collapse and atrophy of the material structure caused by high temperature are solved.

Integrated circuit structures having deep via structures, and methods of fabricating integrated circuit structures having deep via structures, are described. For example, an integrated circuit structure includes a plurality of horizontally stacked nanowires. A gate structure is over the plurality of horizontally stacked nanowires. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires. A conductive trench contact structure is vertically over the epitaxial source or drain structure. A conductive via is vertically beneath and extends into the conductive trench contact structure. The conductive via has a first width beneath the epitaxial source or drain structure less than a second width laterally adjacent to the epitaxial source or drain structure.