1490 results about "Nanowire" patented technology

The invention provides a diaphragm and a preparation method thereof and a lithium ion battery, the diaphragm comprises a porous support layer and a gradient functional layer, the porous support layer comprises a base membrane with the porosity of 45-60% and active groups modified on the surface of the base membrane, and the gradient functional layer comprises a heat conduction strengthening layer and an ion channel layer, the heat conduction strengthening layer comprises a first polymer and a modified boron nitride nanosheet, and the ion channel layer comprises a second polymer and a solid electrolyte nanowire. The porous supporting layer and the gradient functional layer are overlapped to form the composite diaphragm, so that high thermal stability, high wettability and high ion conductivity are synergistically realized, and formation of lithium dendrites can be inhibited.

The invention provides an aerogel reinforced composite electrolyte thin film for a solid-state lithium battery and a preparation method of the aerogel reinforced composite electrolyte thin film, and belongs to the technical field of composite electrolytes.The thin film comprises a three-dimensional porous aerogel skeleton, a solid-state electrolyte compound and lithium salt nanocrystals; wherein the three-dimensional porous aerogel skeleton is prepared from inorganic oxide nanoparticles and a polymer precursor through a sol-gel method; pores of the three-dimensional porous aerogel skeleton are filled with the solid electrolyte compound, the solid electrolyte compound comprises lithium lanthanum zirconium oxide nanowires and a polyoxyethylene-lithium salt composite matrix, and the lithium lanthanum zirconium oxide nanowires are directionally arranged in the thickness direction of the film; the lithium salt nanocrystals grow on the surface of the pore wall of the three-dimensional porous aerogel in situ; the mass ratio of the aerogel skeleton to the solid electrolyte compound is (1: 3)-(1: 15). According to the thin film, the ionic conductivity, the mechanical strength and the interface stability of the electrolyte are remarkably improved.

The invention provides conductive paste, a solar cell, a preparation method of the solar cell and a photovoltaic module. The conductive paste comprises the following components in parts by weight: 70-85 parts of silver powder, 3-8 parts of glass powder, 0.1-2 parts of an additive and 12-25 parts of an organic carrier, wherein the silver powder comprises spherical silver powder and flaky silver powder; the glass powder is prepared from the following components in parts by weight: 65 to 75 parts of Bi2O3, 18 to 25 parts of TeO2 and 8 to 12 parts of V2O5; the additive is a carbon material and / or conductive metal oxide nanoparticles; the organic carrier comprises an infrared absorbing material; the infrared absorption material is selected from any one or more of copper phthalocyanine, a polyaniline-carbon nanotube compound and a tungsten oxide nanowire. The conductive paste can improve the conductivity of the conductive paste and improve the efficiency of the conductive paste in a laser sintering process, so that the contact resistivity is reduced, and the photoelectric conversion efficiency of a photovoltaic solar cell is improved.

The invention discloses a light-moisture dual-curing underwater epoxy coating with a self-repairing function as well as a preparation method and a construction method of the light-moisture dual-curing underwater epoxy coating. The epoxy coating comprises a component A and a component B, wherein the mass ratio of the component A to the component B is (1.5-3.5): 1; the component A is prepared from the following raw materials: bisphenol F type epoxy resin, dynamic disulfide bond modified polysulfide rubber, boron nitride nanosheet and silicon carbide nanowire hybrid filler, a photoinitiator and a silane coupling agent; the component B is prepared from the following raw materials: moisture-cured polyether amine, a boric acid ester bond cross-linking agent and hydrophobic modified graphene oxide. According to the invention, a light-moisture dual-curing mechanism is adopted, ultraviolet irradiation initiates rapid surface curing, and then environmental moisture permeates to complete deep curing. The material provided by the invention has the advantages of rapid curing, excellent self-repairing function, significantly improved underwater adhesion and good thermal conductivity, and provides a new solution for rapid repairing and long-acting protection of underwater structures.

The invention discloses a graphite crucible silicon infiltration resistant coating based on a gradient boron nitride-silicon carbide composite structure and a preparation method thereof. The coating is composed of hexagonal boron nitride nanosheets, beta-type silicon carbide nanowires, yttrium aluminum garnet precursor sol and the like, and effective blocking of 1500-1600 DEG C silicon melt is achieved through gradient structural design and an in-situ self-repairing mechanism. The preparation process comprises the steps of h-BN activation, S C carbon layer deposition, slurry mixing and spraying and segmented heat treatment. The molten silicon contact angle of the coating reaches 158 + / -2 degrees at the temperature of 1550 DEG C, through cracks do not exist after 50 times of thermal shock circulation, the coating is effective after being continuously used for 48 batches under the industrial working condition, the problems of silicon infiltration interface adhesion and thermal shock failure of a traditional graphite crucible are solved, and the coating has remarkable industrial application value.

Embodiments of the present application provide an electronic device, a manufacturing method thereof and an electronic device, and relate to the technical field of semiconductors. The electronic device can be used for growing nanowires in a plane. The electronic device can include a substrate and at least one nanowire. The substrate has at least one groove. The nanowire is embedded in the groove. The groove has at least one groove wall. The nanowire extends along one groove wall of the groove and is in contact with the groove bottom. The groove wall has a guiding effect, so that the nanowire can grow in the plane of the groove bottom along the extension direction of the groove wall, which is conducive to large-scale manufacturing of the electronic device. The plane of the groove bottom can be parallel to the surface of the circuit board for carrying the electronic device. Therefore, when the nanowire grows in the plane of the groove bottom, it is conducive to large-scale integration of the electronic device on the circuit board.

The invention discloses a preparation method for regulating and controlling the growth of a hydrophobic Cu2S nanowire material on the surface of a copper foil, and relates to the technical field of solid surface, and the preparation method comprises the following specific steps: 1) reacting the treated copper foil in a NaOH solution and an ammonium persulfate solution for 10-30 minutes, taking out the copper foil, washing the copper foil with absolute ethyl alcohol, and drying the copper foil in a drying oven for 10-30 minutes; and soaking the obtained sample in a silane coupling agent KH-570 (gamma-methacryloxy propyl trimethoxy silane) of which the concentration is 2.5% to 10% for 20 to 60 minutes. (2) reacting the sample obtained in the step (1) in a 0.1-1mol / L Na2S solution for 10-30 minutes, then taking out the sample, and continuously soaking the sample in a silane coupling agent for 20-60 minutes to obtain a hydrophobic Cu2S nanowire on the surface of a copper foil; according to the preparation method for regulating and controlling the growth of the hydrophobic Cu2S nanowire material on the surface of the copper foil, the regulation and control of the hydrophobicity of the Cu2S nanowire on the surface of the copper foil are realized by regulating and controlling the proportion of a silane coupling agent and the like; when the modified hydrophobic Cu2S nanowire is soaked in a silane coupling agent KH-570 with the mass concentration of 2.5%-10%, the contact angle of the modified hydrophobic Cu2S nanowire can reach 91.46 degrees to 129.46 degrees.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The application discloses a cross-linked ETFE composite film with gradient ultraviolet shielding function and a preparation method and application thereof, and belongs to the technical field of ETFE film preparation. The cross-linked ETFE composite film is composed of three layers of a surface layer, a middle layer and a bottom layer. The surface layer material comprises ETFE resin and fluorinated carbon quantum dots; the middle layer material comprises ETFE resin, allyl-containing comonomer A and phenyl-containing comonomer B; and the bottom layer material comprises ETFE resin and CeO2 nanowires. The fluorinated carbon quantum dots have a particle size of 3-5 nm and contain a -C4F9 structure. The comonomer A is an allyl-containing fluorine olefin monomer, and the comonomer B is a phenyl-containing organic fluorinated compound. Through the synergistic effect of the surface layer self-migration fluorinated carbon quantum dots, the middle layer copolymerization modification and the bottom layer CeO2 nanowires, high light transmittance, full-waveband ultraviolet shielding and long-term weather resistance are achieved.

The invention discloses a temperature control system and method of a micro-fluidic chip, and relates to the technical field of micro-fluidic temperature control, and the method comprises the following steps: in the manufacturing process of the micro-fluidic chip, embedding topological insulator nanowires into a substrate in a directional arrangement mode to form a pre-locking array, and meanwhile, generating an anisotropic heat conduction network under the continuous action of a sound-magnetic field, a topological vortex invariant is calculated, and a heat conduction weight coefficient is generated; arranging a fluorescent layer on the surface of a micro-reaction cavity of the anisotropic heat conduction network, collecting a fluorescence lifetime attenuation curve in real time, and calculating a transient temperature value and a temperature change rate according to a heat conduction constraint variation model and a heat conduction weight system; nonlinear feed-forward compensation power is calculated according to the transient temperature value and the temperature change rate, feedback compensation power is calculated in combination with a deviation field of the target temperature and the real-time temperature, and a compensation power instruction is generated; according to the method, the thermal pilot frequency domain filtering function is constructed through the compensation power instruction, so that the uniformity and response speed of thermal response are improved.

Integrated circuit structures having direct backside source or drain contacts are described. In an example, an integrated circuit structure includes first and second pluralities of horizontally stacked nanowires or fins, and first and second gate stacks. An epitaxial source or drain structure is between the first plurality of horizontally stacked nanowires or fin and the second plurality of horizontally stacked nanowires or fin, the epitaxial source or drain structure over and electrically coupled to a corresponding conductive backside contact that extends laterally beyond the epitaxial source or drain structure without contacting the first gate stack or the second gate stack.

The invention relates to the technical field of solid-state lithium ion batteries, in particular to a composite solid-state electrolyte diaphragm, a preparation method and an all-solid-state battery. According to the invention, a 3D ion / electron channel is constructed through a cellulose skeleton, an oxide electrolyte nanowire directional arrangement technology is adopted, and an in-situ interface lithium fluoride repairing layer is adopted, so that the industrialization bottleneck that high ion conduction-mechanical strength-interface stability is difficult to collaboratively optimize in the prior art is broken through; the common problems of insufficient bulk phase and interface ion conductivity, poor mechanical strength, poor compatibility with a high-nickel positive electrode / silicon carbon negative electrode and the like of a solid-state battery are effectively solved. The mass energy density of the prepared all-solid-state battery can reach 360 Wh / kg, the capacity retention ratio can still be maintained at 80% or above after 1100 times of circulation, and the all-solid-state battery successfully passes 190 DEG C thermal runaway and acupuncture tests and shows excellent safety performance and wide industrial application prospects.

Integrated circuit structures having void-free internal spacers, and methods of fabricating integrated circuit structures having void-free internal spacers, are described. For example, an integrated circuit structure includes a stack of horizontal nanowires. A gate structure is vertically around the stack of horizontal nanowires, the stack of horizontal nanowires extending laterally beyond the gate structure. An internal gate spacer is between vertically adjacent nanowires of the stack of horizontal nanowires and laterally adjacent to the gate structure. An epitaxial source or drain structure is coupled to an end of the stack of horizontal nanowires and in contact with the internal gate spacer. A dielectric structure is beneath and in contact with the epitaxial source or drain structure, the dielectric structure including a same material as the internal gate spacer, and the dielectric structure not including a seam therein.

The invention belongs to the technical field of conductive polymer materials, and particularly relates to a three-dimensional polypyrrole conductive material and a preparation method and application thereof. The preparation method of the three-dimensional polypyrrole conductive material comprises the following steps: (1) preparing a metal copper quantum dot and graphene oxide mixed dispersion liquid; (2) adding an oxidizing agent to obtain a reaction solution; (3) adding a pyrrole monomer, and carrying out a polymerization reaction to obtain a graphene oxide / polypyrrole composite dispersion liquid; and (4) adding a reducing agent to reduce the graphene oxide to obtain the three-dimensional polypyrrole conductive material. After the metal copper quantum dots are loaded on the graphene oxide sheet layer, the graphene oxide sheet layer becomes a structure-oriented core in subsequent polymerization, and finally the stable three-dimensional conductive composite material with graphene as a framework and polypyrrole nanosheets as connection points is formed. Compared with a traditional three-dimensional material formed by overlapping and integrating a two-dimensional graphene sheet layer and a conductive nanowire / nanorod, the three-dimensional material with the structure can form an efficient conductive path more easily under the condition of low filler content.

The invention relates to the technical field of wave-absorbing materials, in particular to a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material. The invention provides a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material, which comprises the following steps of: etching titanium aluminum carbide powder through a LiF / HCl mixture, and performing ultrasonic stripping to prepare a uniform dispersion of MXene nanosheets; the preparation method comprises the following steps: dispersing MXene nanosheets in a solution of water and absolute ethyl alcohol, and adding a pyrrole monomer and a FeCl3. 6H2O aqueous solution for reaction; after the reaction, washing is performed to obtain a PPy-MXene composite material; the preparation method comprises the following steps: by taking NiCl2. 6H2O as a nickel source and sodium oxalate as a precipitator, preparing NiO nanowires by adopting a hydrothermal method combined with a calcining process; the invention discloses a preparation method of an MXene-NiO-PPy ternary composite wave-absorbing material.According to the method, the MXene-NiO-PPy ternary composite wave-absorbing material with rich heterogeneous interfaces and a porous micro-nano structure is constructed, cooperation of dielectric loss, magnetic loss and interface polarization loss is achieved, and finally the light, efficient and broadband wave-absorbing performance is obtained.

The invention discloses a silicon carbide / graphene composite material and a preparation method thereof, the composite material is of a three-dimensional network structure generated through in-situ reaction of multilayer graphene and silicon powder, silicon carbide nanowires in the structure are distributed on graphene sheets, the length of the silicon carbide nanowires is 1-5 microns, the diameter of the silicon carbide nanowires is 50-100 nm, and the silicon carbide nanowires are in a beta-SiC crystal form. The material is prepared through a carbon thermal reduction method, specifically, silicon carbide nanowires grow on the surface of graphene in situ, so that electromagnetic parameters and impedance matching characteristics of the material are optimized. The prepared composite material has the characteristics of light weight, high specific surface area, good dielectric loss and the like, and shows good broadband wave-absorbing performance in the frequency band of 2-18 GHz, the minimum reflection loss can reach-23.535 dB, and the effective absorption bandwidth reaches 1.498 GHz. The method is simple in process, low in energy consumption and suitable for large-scale production, and has wide application prospects in the fields of stealth technology, electromagnetic shielding and the like.

The invention belongs to the technical field of adhesives, and particularly discloses a single-component silicone sealant for stainless steel bonding and a preparation method thereof, and the single-component silicone sealant comprises the following components by weight: 50-60 parts of alpha, omega-dihydroxy polydimethylsiloxane; 10 to 15 parts of a polydopamine coated silicon carbide nanowire; 5 to 15 parts of modified nano aluminum oxide gel; 5 to 10 parts of methyltris (methylethylketoxime) silane; 1 to 3 parts of dodecyl tris (methylethylketoxime) silane; 0.03 to 0.3 part of a coordination enhanced organic tin catalyst; and 8-14 parts of a plasticizer. According to the single-component silicone sealant for stainless steel bonding and the preparation method of the single-component silicone sealant, the modified nanometer aluminum oxide gel is selected, the bonding performance of stainless steel in a humid and hot environment is promoted and improved, the silicon carbide nanowire is coated with polydopamine, the bonding performance of the stainless steel is effectively improved, and the single-component silicone sealant can be widely applied to various indoor and outdoor scenes.

The invention discloses a high-strength multifunctional glass panel and a processing technology thereof. The glass panel comprises a high aluminosilicate glass substrate, a surface composite functional layer and an embedded conductive-heat insulation composite layer. The content of Al2O3 in the substrate is 15-20wt%, and the thickness is 2-6mm; the surface composite functional layer is composed of a honeycomb microstructure layer and a SiO2-TiO2-ZnO ternary nano-composite coating film, the inner wall of the microstructure layer is covered with a hydrophobic coating, and the SiO2-TiO2-ZnO ternary nano-composite coating film has the anti-reflection function, the self-cleaning function and the antibacterial function; and the silver nanowire-aerogel composite layer is embedded in the embedded conductive-heat insulation composite layer, so that cooperation of transparent conductive and efficient heat insulation is realized. According to the processing technology, a microstructure and a functional coating film are synchronously formed through an ultraviolet nanoimprint technology, and the aerogel is combined to fill the conductive grid, so that the traditional multi-process flow is simplified. The bending strength of the glass panel is improved by 50% or above compared with that of traditional glass, and the glass panel has the characteristics of touch control, heat insulation, antibiosis and the like, is suitable for the fields of smart home, energy-saving buildings and the like, and has the advantages of low energy consumption and high cost performance.

The invention discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, the superconducting rectifier comprises more than one superconducting diode, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowing section, and the narrowing section is provided with a narrow section. The narrowing section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged, and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. According to the invention, in-situ reconfigurable reversal symmetry destruction can be realized through a nanoscale hot spot controlled by a grid electrode; electrically controlled opening or closing and polarity reversal are realized by adjusting a small grid current without changing a magnetic field; the superconductive rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves a way for development of extensible and electrically programmable superconductive electronic devices.

Techniques for dielectric isolation in bulk nanosheet devices are provided. In one aspect, a method of forming a nanosheet device structure with dielectric isolation includes the steps of: optionally implanting at least one dopant into a top portion of a bulk semiconductor wafer, wherein the at least one dopant is configured to increase an oxidation rate of the top portion of the bulk semiconductor wafer; forming a plurality of nanosheets as a stack on the bulk semiconductor wafer; patterning the nanosheets to form one or more nanowire stacks and one or more trenches between the nanowire stacks; forming spacers covering sidewalls of the nanowire stacks; and oxidizing the top portion of the bulk semiconductor wafer through the trenches, wherein the oxidizing step forms a dielectric isolation region in the top portion of the bulk semiconductor wafer. A nanowire FET and method for formation thereof are also provided.

The invention discloses a high-conductivity porous polymer composite material and a preparation method thereof, and relates to the technical field of conductive composite materials. The high-conductivity porous polymer composite material is prepared by mixing polyether-ether-ketone, amino-functionalized graphene, a silver nanowire / carbon nanotube hybrid filler, a porous polyimide microsphere carrier, an ionic liquid and an antioxidant. The preparation method comprises the following steps: preparing amino-functionalized graphene; preparing a hybrid filler microsphere complex; performing mixing; preparing a porous prefabricated body; and carrying out mould pressing and shaping. According to the composite material disclosed by the invention, through multi-scale structural design and environment-friendly process innovation, high conductivity, high-strength mechanical properties and light weight are realized under the condition of low filler addition amount.

Structures with staggered backside interconnections are described. In one example, an integrated circuit structure includes a frontside structure including a device layer having a plurality of nanowire-based transistors or a plurality of fin-based transistors, and a plurality of metallization layers above the plurality of nanowire-based transistors or the plurality of fin-based transistors of the device layer. A backside structure is located below the plurality of nanowire-based transistors or the plurality of fin-based transistors of the device layer. The backside structure includes a metallization layer with staggered backside interconnections.

The invention relates to the technical field of fluorosilicone materials, in particular to a glass fiber sleeve with an excellent voltage resistance function and a preparation method of the glass fiber sleeve. The glass fiber sleeve with the excellent voltage-resistant function comprises a glass fiber sleeve and a composite coating coated on the outer side of the glass fiber sleeve, the composite coating is obtained by thermocuring a coating material; the coating material is prepared from the following raw materials in parts by mass: 50 to 100 parts of fluorinated silicone rubber emulsion, 1 to 5 parts of bis (3-aminopropyl) terminated polydimethylsiloxane, 0.5 to 1.5 parts of furfuryl alcohol resin, 1 to 5 parts of epoxy resin, 1 to 5 parts of activated nano silicon dioxide, 1 to 3 parts of boron nitride nanowire, 1 to 2 parts of dopamine hydrochloride, 1 to 2 parts of dispersing agent and 10 to 30 parts of solvent. The invention can effectively ensure that the coating forms a compact cross-linked structure in the curing process, and can enhance the adhesive force of the coating, weaken the temperature difference between the surface and the interior, inhibit the heat accumulation effect and delay the degradation of the insulating property.

A method for forming a semiconductor package includes providing a semiconductor chip containing a bond pad located on a top surface of the semiconductor chip, providing a carrier including a chip mounting pad and a landing pad, mounting the semiconductor chip onto the chip mounting pad with the bond pad facing away from the carrier, and attaching an electrical connecting element between the bond pad and the landing pad, wherein the bond pad is formed from nanowires.

Techniques are provided herein to form semiconductor devices having gate tie-down structures between the device gate and a buried / backside power rail (BPR). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure on a semiconductor region. The semiconductor region can be, for example, a fin or a set of one or more nanowires or nanoribbons that extends between a source region and a drain region. A BPR structure is beneath a dielectric layer that is between the BPR structure and the conductive material of the gate structure. A portion of the conductive material also extends through the dielectric material to provide a conductive via between the gate structure and the underlying BPR structure. The conductive material may be, for example, work function and / or metal fill material of the gate electrode of the gate structure.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

A wearable display system includes one or more nanowire LED micro-displays. The nanowire micro-LED displays may be monochrome or full-color. The nanowire LEDs forming the arrays may have an advantageously narrow angular emission profile and high light output. Where a plurality of nanowire LED micro-displays is utilized, the micro-displays may be positioned at different sides of an optical combiner, for example, an X-cube prism which receives light rays from different micro-displays and outputs the light rays from the same face of the cube. The optical combiner directs the light to projection optics, which outputs the light to an eyepiece that relays the light to a user's eye. The eyepiece may output the light to the user's eye with different amounts of wavefront divergence, to place virtual content on different depth planes.

The invention discloses a bionic microstructure multifunctional composite film and a low-temperature in-situ preparation method thereof, the film is composed of a biomass polymer matrix layer, a nano composite structure layer of uniformly dispersed metal oxide nanowires and two-dimensional transition metal carbides, and a surface bionic microstructure layer, wherein the bionic microstructure layer comprises micron bulges and nano fluff which are periodically arranged; the preparation method comprises the following steps: carrying out ultrasonic-centrifugal synergistic dispersion on the biomass polymer and the nano functional material; a three-dimensional porous structure is constructed through template-assisted freezing forming; and the pulse plasma assists in chemical vapor deposition in-situ growth of the bionic microstructure. The resistance change rate of the film under 100% strain is lt; 5%, the O2 / CO2 selective transmission ratio reaches 12: 1, the tactile sensitivity is 35 kPa <-1 >, and the electrochromic response time is lt; the water contact angle is gt in 50s; 150 DEG C; the technical problem that multifunctional integration, low-temperature preparation and environmental friendliness are difficult to consider at the same time is solved, and the method can be widely applied to the fields of flexible electronics, intelligent packaging, bionic sensors and the like.

The invention belongs to the technical field of coatings, and discloses a 600 DEG C heat insulation coating containing In2O3 and rutile type TiO2 aerogel and a preparation method of the 600 DEG C heat insulation coating. The coating is composed of an organic-inorganic compound adhesive, In2O3 at rutile type TiO2 aerogel, hollow glass beads, HAP ultra-long nanowires and auxiliaries, the aerogel is prepared by combining sol-gel with CO2 supercritical drying, and the aerogel is calcined at 800 DEG C to form a rutile crystal form. The compound adhesive is prepared from alkaline silica sol, modified organic silicon emulsion and a silane coupling agent through hydro-thermal synthesis. The coating is prepared by dispersing all the components at a high speed, heat conduction is inhibited by using aerogel nanopores, infrared radiation is reflected synergistically by rutile TiO2 and In2O3, and heat convection is blocked by a lock catch structure formed by hollow glass beads and HAP nanowires. The thermal conductivity of the obtained coating at 600 DEG C is as low as 0.035-0.044 W / (m.K), the coating has excellent temperature resistance, thermal shock resistance and full-wave band heat reflection capacity, and the technical problems of high-temperature phase change, structural collapse and poor thermal stability of a traditional coating are solved.

The invention provides a surface modified carbon negative electrode material, a preparation method thereof and a battery. The preparation method comprises the following steps: mixing a graphite carbon source and a pore-forming agent, and graphitizing the obtained mixture to form porous graphite; performing oxidation treatment on the porous graphite to prepare porous graphite oxide particles; the porous graphite oxide particles are placed in a tin source solution containing tin cations, the tin source solution is attached to the surfaces of holes of the porous graphite oxide particles, and tin oxide attached to the surfaces of the holes of the porous graphite oxide particles is formed based on the tin source solution; and the porous graphite oxide particles are placed in a carbon-containing reducing gas environment to be subjected to calcination treatment, and the carbon-coated tin nanowires are prepared on the basis of the tin oxide. According to the preparation method, the surface and holes of the carbon negative electrode material are modified by adopting the carbon-coated tin nanowires, so that the discharge performance of the battery at relatively high rate can be effectively improved.