The application discloses a
material structure for improving GaN
heterojunction electron mobility and an epitaxial growth method thereof. The structure comprises, from bottom to top, a
single crystal substrate, an AlN
nucleation layer, a GaN buffer layer, an AlN
insertion layer, a GaN
isolation layer, a lower AlGaN
barrier layer, an upper AlGaN
barrier layer and an InGaN cap layer. The epitaxial growth method is characterized in that: the GaN
isolation layer is introduced to suppress
alloy disorder scattering; the lower
barrier layer is grown by using a high V / III ratio low-speed process to reduce defects, and the upper barrier layer is grown by using a low V / III ratio high-speed process to improve the interface morphology; and finally, the InGaN cap layer is grown to relieve stress and reduce
surface states. The application can synergistically suppress multiple scattering mechanisms, and the
room temperature electron mobility is improved to 2270 cm 2 / V·s or above, and the
surface roughness is significantly reduced, thereby providing a key material basis for high-performance GaN
microwave devices.