7 results about "Surface states" patented technology

The application discloses a material structure for improving GaN heterojunction electron mobility and an epitaxial growth method thereof. The structure comprises, from bottom to top, a single crystal substrate, an AlN nucleation layer, a GaN buffer layer, an AlN insertion layer, a GaN isolation layer, a lower AlGaN barrier layer, an upper AlGaN barrier layer and an InGaN cap layer. The epitaxial growth method is characterized in that: the GaN isolation layer is introduced to suppress alloy disorder scattering; the lower barrier layer is grown by using a high V / III ratio low-speed process to reduce defects, and the upper barrier layer is grown by using a low V / III ratio high-speed process to improve the interface morphology; and finally, the InGaN cap layer is grown to relieve stress and reduce surface states. The application can synergistically suppress multiple scattering mechanisms, and the room temperature electron mobility is improved to 2270 cm 2 / V·s or above, and the surface roughness is significantly reduced, thereby providing a key material basis for high-performance GaN microwave devices.

The recording device selects cleaning control in response to the occurrence of an event. Therefore, it does not necessarily perform cleaning of the conveyor belt in accordance with the degree of contamination of the conveyor belt. [Solution] A recording device for recording on a recording medium, comprising: a recording means for performing the recording by ejecting ink onto the recording medium; a medium transport belt for transporting the recording medium on which the recording is performed by the recording means; a cleaning means that is movable to a contact position in contact with the medium transport belt or to a non-contact position not in contact with the medium transport belt, and performs a cleaning operation on the medium transport belt when located at the contact position; a discrimination unit for determining the surface state of the medium transport belt; and a control unit for causing the cleaning means to perform the cleaning operation according to the surface state of the medium transport belt determined by the discrimination unit.

The invention discloses a terahertz detector and a preparation method thereof. The terahertz detector comprises a substrate; the TaNiTe5 layer is positioned on the substrate; the electrode is located on the substrate, and the electrode comprises a source electrode and a drain electrode which are electrically connected with the two ends of the TaNiTe5 layer respectively. According to the terahertz detector, the TaNiTe5 layer of the quasi-one-dimensional topological structure serves as the channel material layer of the terahertz detector, the unique double Dirac surface state and the quasi-one-dimensional structure of the TaNiTe5 layer can bring high carrier mobility, and effective detection of terahertz waves at the room temperature is achieved through a photoconductive response mechanism.

The invention discloses a method for improving cleaning efficiency before electrogilding of a back hole. The method comprises the following steps: detecting components of a to-be-etched position on a wafer by using an EDS; an etching machine is used for etching the wafer to form a back hole, in the etching process, signal detection is continuously carried out on the surface of the wafer until a gold signal appears, an etching end point is taken, and the etching process is ended; an EDS is used for detecting a signal of the etched position of the wafer, and back hole components are detected; checking the surface state of the side wall of the back hole and the gold surface roughness of the etching stop layer by using an SEM (Scanning Electron Microscope), wherein the surface state of the side wall is a smooth state or a rough state; configuring a shower head according to the signal type; and cleaning the back hole by using a configured shower head according to the signal type, the side wall surface state and the gold surface roughness until the side wall surface state is a smooth state, and the signals of the etching position only comprise the gold signal and the signal from the semiconductor material. The process can be simplified, and the cleaning efficiency is improved.

The invention relates to the technical field of photoelectric detectors and semiconductor materials, and particularly provides an all-inorganic lead-free two-dimensional perovskite single crystal as well as a preparation method and application thereof. According to the invention, N-ethyl-N-methylpiperidine iodized salt is introduced, and an improved cooling crystallization means of introducing a seed crystal is combined, so that the crystallization kinetics and the surface state of the lead-free two-dimensional perovskite are fundamentally changed; the problems of low crystal quality and poor X-ray detection and visible light detection device performance caused by poor growth controllability and multiple surface defects of the lead-free two-dimensional perovskite are solved. The obtained single crystal is large in size, low in defect density and smooth in surface, so that electrode contact and carrier extraction are facilitated. The performance of a detector based on the single crystal is greatly improved (the sensitivity of an X-ray detector reaches nearly 60000C. Gy <-1 >. Cm <-2 >, the responsivity of a visible light dual-mode detector exceeds 4000mA / W, and the response speed is within 1ms).

A system comprising a quantum information engine (QIE). The QIE includes a topological surface state three-dimensional topological insulator (TSS-3DTI) to flow, in a first flow direction from an input side to an output side, electrons having a first spin-momentum. The TSS-3DTI includes a first surface. The first surface has first spin-momentum locked charge carriers and a plurality of first magnetic impurities having a second average nuclear spin polarization. The TSS-3DTI stores information in the first surface at the points of interaction that occur between the plurality of first magnetic impurities interacting with the flowing electrons to exchange, at each point of interaction, a nuclear spin of a respective first magnetic impurity with an electron spin of a respective flowing electron. The system can include at least one surface. The system can harvest energy from other integrated circuits. A method of storing quantum energy is also provided.

The invention relates to the technical field of material detection, and provides a material detection method and system based on a photoacoustic effect. The material detection system comprises a light source for sending first detection light; the dispersion assembly is used for receiving the first detection light and obtaining second detection light after dispersion; the condensation assembly is used for focusing the second detection light on the surface of the to-be-detected material; the acquisition assembly is used for collecting acoustic signals; and the processor determines detection parameters of the to-be-detected material based on the sound wave signal, wherein the detection parameters comprise one or more of a material, a surface process, impurities or damage. According to the material detection system provided by the invention, the multi-wavelength photoacoustic response spectrum of the material can be captured by realizing single excitation through continuous wavelength, and the technical problem that a traditional detection system is easily interfered by environmental noise and material surface states due to adoption of a single signal is solved, so that the detection precision is effectively ensured, detection parameters are multi-dimensionalized, and the detection accuracy is improved. Various parameters of the to-be-detected material can be obtained, and the detection efficiency is improved.