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Safety indicator and method

A safety indicator monitors environment conditions detrimental to humans e.g., hazardous gases, air pollutants, low oxygen, radiation levels of EMF or RF and microwave, temperature, humidity and air pressure retaining a three month history to upload to a PC via infra red data interface or phone link. Contaminants are analyzed and compared to stored profiles to determine its classification and notify user of an adversity by stored voice messages from, via alarm tones and associated flashing LED, via vibrator for silent operation or via LCD. Environmental radiation sources are monitored and auto-scaled. Instantaneous radiation exposure level and exposure duration data are stored for later readout as a detector and dosimeter. Scans for EMF allow detection with auto scaling of radiation levels and exposure durations are stored for subsequent readout. Electronic bugs can be found with a high sensitivity EMF range setting. Ambient temperature measurements or humidity and barometric pressure can be made over time to predict weather changes. A PCS RF link provides wireless remote communications in a first responder military use by upload of alarm conditions, field measurements and with download of command instructions. The link supports reception of telemetry data for real time remote monitoring of personnel via the wrist band for blood pressure, temperature, pulse rate and blood oxygen levels are transmitted. Commercial uses include remote environmental data collection and employee assignment tasking. GPS locates personnel and reporting coordinates associated with alarm occurrences and associated environmental measurements.

Pressure-Sensitive Touch Panel

An apparatus for combined capacitance and pressure sensing is described. The apparatus includes a multiplexer (75) having a plurality of inputs (76) and an output (F), a touch panel (29), and a front end module (3). The touch panel includes a layer structure (5; FIG. 15) comprising one or more layers, each extending perpendicularly to a thickness direction, the one or more layers including a layer of piezoelectric material (10; FIG. 15), the layer structure having first (6) and second (7; FIG. 15) opposite faces, and the layer(s) arranged between the first and second faces such that the thickness direction of each layer is perpendicular to the first and second faces. The touch panel also includes a plurality of first electrodes (8) disposed on the first face, each first electrode connected to a respective input of the multiplexer. The touch panel also includes at least one second electrode (9) disposed on the second face. The front end module is configured to receive an input signal (11) from the multiplexer output. The front end module includes a first stage (12) configured to provide an amplified signal based on the input signal, and a second stage comprising first (13) and second (14) frequency-dependent filters configured to receive the amplified signal and to provide respective first (16) and second (17) filtered signals. The first filtered signal has a first frequency bandwidth, and the second filtered signal has a second frequency bandwidth which has a relatively higher start-frequency than the first frequency bandwidth.

Millimeter-wave time-division linear frequency modulation multiple-target detection colliding-proof radar for car

The invention relates to the technical field of radio fix radars, in particular to a millimetre wave time-division linear frequency modulation multi-object detection automobile anti-collision radar. The radar of the invention adopts full phase parameter receiving/emitting benchmark signal and time-division and time-sequence asynchronous control to receive/emit a dual-purpose quasi-light integrated medium lens antenna array, and scans the objects possible to be collided on the warning road surfaces by DSP according to lane scanning wave beam; the road situation photographing combined with the vehicle speed and GPS data MCU to control time-division n-passage modulation frequency and waveform millimetre wave linear locking phase frequency modulation; emission is carried out sequentially by R/T2, a circulator, a wave beam switch and the antenna array; echo passes through the antenna array, the wave beam switch, the circulator, the R/T1, low noise high amplifier, subharmonic mixing, middle amplifier and a time-dividing circuit and multi-object signal corresponding matching filter wave and is processed and controlled by MCU at DSP; when a plurality of road barriers are encountered, the orientation, distance and relative speed are determined by DSP restriction virtual warning; three-dimensional images are displayed by a CRT; the closer the distance of the object is, the higher the resolution is; the object which is closest to the vehicle is recognised; sound and light alarm are carried out when the distance is less than safety distance; when the distance is near to the dangerous distance, the vehicle can intelligently avoid the barrier or reduce the speed or brake; the radar of the invention can make a choice according to the control reference road situation, the vehicle speed and the GPS data, thus obviously improving the driving safety of the vehicle.

Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
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