45 results about "Readout integrated circuit" patented technology

Systems and methods are provided for time resolution of signals produced by the emission of energy. More particularly, systems and methods are provided for measuring distance using photons propagating in a scattering medium to produce multi-dimensional, measurements of objects in a media and / or the media itself by virtue of the character of light spatially scattered and absorbed in the media resulting from the transmission of light into the media, such transmitted light having some temporal character that distinguishes it from background light, e.g., ambient sources. A method for obtaining terrestrial LiDAR data generally includes: providing a LiDAR system moving traverse to a ground canopy; emitting light pulses from the LiDAR system toward the ground canopy and terrain such that the light pulses reflect therefrom; and receiving the reflected light pulses at the LiDAR system; wherein the LiDAR system includes a monolithic module comprising a photonic device, a sampling module, a digitizing module, and a readout integrated circuit (ROIC).

The invention relates to the technical field of tactile sensors, in particular to a CMOS (complementary metal oxide semiconductor) compatible high-density tactile sensor array and a preparation method thereof, and the CMOS compatible high-density tactile sensor array comprises a micro / nano structure pressure sensitive film which comprises a conductive network and an elastic polymer substrate and is used for generating a deformation signal and a current change signal; the CMOS readout integrated circuit is electrically connected with the micro / nano structure pressure sensitive film, the pixel array of the CMOS readout integrated circuit is 640 * 512, the pixel size is 15 * 15 [mu] m, and each pixel comprises a central pixel electrode and a surrounding grounding grid and is used for collecting / measuring the resistance change of the micro / nano structure pressure sensitive film; the signal processing circuit is electrically connected with the CMOS readout integrated circuit and used for processing the tactile signal data, and the problems that in the prior art, the resolution ratio is limited, sensitivity is insufficient, and the integration degree is low are solved.

The present invention provides an array coherent balanced photodetection component and manufacturing method. The component includes: a package housing, an array balanced readout integrated circuit, two photodetector array units, and a package substrate. The top surface of the package housing includes a filter plate. Inside the package housing, two photodetector array units are disposed on the top surface of the array balanced readout integrated circuit and connected to the array balanced readout integrated circuit. The top surface of the array balanced readout integrated circuit is the side facing the filter plate. The package substrate is disposed on the bottom surface of the array balanced readout integrated circuit and connected to the array balanced readout integrated circuit. The above-mentioned array coherent balanced photodetection component can integrate the two photodetector array units, thereby realizing high-sensitivity laser signal array detection based on laser signal coherent detection and integrated array photoelectric signal processing, thereby improving detection sensitivity.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

A radiation detector unit includes a read-out integrated circuit (ROIC) including a plurality of core circuit blocks located on a continuous uninterrupted substrate adjacent to one another along a first direction, and a plurality of radiation sensors bonded to a front side surface of the ROIC, where each radiation sensor of the plurality of radiation sensors is bonded to a respective core circuit block of the plurality of core circuit blocks of the ROIC. Additional embodiments include detector modules and detector arrays formed by assembling the detector units, and methods of operating and manufacturing the same.

A touch circuit includes a micro control circuit and a readout integrated circuit configured to communicate with the micro control circuit though a selection signal line, a clock signal line, a master output slave input (MOSI) signal line, and a master input slate output (MISO) signal line. In a first period, the readout integrated circuit generates a first interrupt request signal representing completion of touch sensing, and transfers the first interrupt request signal to the micro control circuit through the MISO signal line. In a second period which differs from the first period, the readout integrated circuit generates a second interrupt request signal, representing a kind of error and whether an operation state thereof is normal, and transfers the second interrupt request signal to the micro control circuit through the MOSI signal line.

The invention provides a monolithic three-dimensional integrated photoelectric detector and a preparation method thereof. The preparation method comprises the following steps: forming an isolation passivation layer on a readout integrated circuit serving as a substrate of the photoelectric detector; forming a source conductive through hole, a drain conductive through hole and a bottom gate contact hole in the isolation passivation layer; a conductive material is deposited and planarized, the source electrode conductive through hole, the drain electrode conductive through hole and the bottom gate contact hole are filled with the conductive material, the conductive material in the source electrode conductive through hole forms a source electrode conductive channel, the conductive material in the drain electrode conductive through hole forms a drain electrode conductive channel, and the conductive material in the bottom gate contact hole forms a bottom gate electrode layer; forming a bottom gate dielectric layer on the planarized surface, and forming a channel layer on the bottom gate dielectric layer; forming a source electrode and a drain electrode, wherein the source electrode and the drain electrode are electrically connected with the connecting port of the read-out integrated circuit through a source electrode conductive channel and a drain electrode conductive channel respectively; and forming a top gate structure which comprises a top gate dielectric layer and a photosensitive layer.

The present invention relates to a light detection device array and, more specifically, to a light detection device array in which each light detection device can be individually controlled and which can reduce ROIC internal complexity and manufacturing costs. The light detection device array according to an embodiment of the present invention comprises: a substrate; a plurality of light detection devices arranged in M rows (M is a natural number greater than 2) and two columns on the substrate; a quenching resistor disposed on the substrate, electrically connected to a contact electrode, and including conductive lines having a zigzag or serpentine shape and continuously arranged in the row direction; and a bonding pad disposed on the substrate and configured to be electrically connected to the quenching resistor.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

The present invention belongs to the technical field of substrate processing. Disclosed is a substrate processing method for improving the imaging quality of an infrared focal plane hybrid integrated chip. The infrared focal plane hybrid integrated chip is fabricated from an array die and a silicon readout integrated circuit by means of flip-chip bonding using indium bumps; and an epitaxial layer, a substrate / epitaxial layer interface and a substrate are sequentially arranged above the indium bumps along a first direction. The method comprises the following steps: step S1, thinning a substrate, and performing an adhesive and wax removal treatment; step S2, forming a protective layer on an electrode of a silicon readout integrated circuit; step S3, adhering a treated die and a dummy wafer to a glass substrate, and removing the thinned substrate by means of a chemico-mechanical polishing treatment; and step S4, removing, by means of a chemical polishing treatment, the portion of the epitaxial layer that is close to the substrate / epitaxial layer interface and has a set thickness, and performing cleaning. The technical solution has the following beneficial effects: a tellurium-zinc-cadmium substrate is removed by means of chemico-mechanical polishing, thereby reducing the loss rate and overcoming the problem of uneven corrosion; and an epitaxial material close to the substrate / epitaxial layer interface is removed by means of chemical polishing, thereby improving the imaging quality.

Various embodiments are described herein for a sensor device, a method of manufacturing said sensor device, and a camera device constructed using said sensor device. The sensor device includes: a readout integrated circuit; an array of electrical contacts mounted to the readout integrated circuit; a solution processed layer deposited on top of the array of electrical contacts; and a spectral band filter layer deposited on top of the solution processed layer, wherein the spectral band filter layer is optically aligned with the solution processed layer and wherein the readout integrated circuit, the array of electrical contacts and the solution processed layer form together a focal plane array for receiving light from a lens device.

The present invention generally relates to pulse capture electronics (PCE) of an imaging system that provides the ability to interface with, control, and test Read-Out Integrated Circuits (ROIC), and communicate the image data to a computing device for rendering and / or computational processing. The RIS-DC includes a single board signal processing architecture that is combined with a processor board to enable various operational requirements and varying ROICs to be configured to produce an operational imaging system.

To provide a focal plane array (FPA) and a readout integrated circuit (ROIC) suitable for low light level (LLL) imaging.SOLUTION: An imaging system comprises: a focal plane array (FPA) comprising a plurality of photodiodes; a pixel circuitry array (PCA) comprising a plurality of transistors, where an input node of a transistor of the plurality of transistors is connected to each photodiode collection node of the FPA; and biasing circuitry. The biasing circuitry is configured to: selectively bias a first portion of the plurality of transistors into an inactive configuration; reverse-bias a substrate of each transistor of the first portion of the plurality of transistors; selectively bias a second portion of the plurality of transistors into an active configuration; and reverse-bias the shared substrate to a different reverse bias than the reverse bias of each transistor substrate of the first portion of the plurality of transistors.SELECTED DRAWING: Figure 2

The system and method are described for optical processing. According to some aspects, the apparatus may include a pixelated photodiode array (PDA), and each pixel of the PDA includes a radiation detector. Further, the optical processing apparatus may include a memory storing one or more characteristics for each pixel of the PDA, and a read out integrated circuit (ROIC) communicatively coupled to the FPA and the memory. In some aspects, the ROIC reads the one or more characteristics for each pixel of the PDA from the memory and adjusts an arm / disarm bias voltage for each pixel of the PDA based on the one or more characteristics of each pixel.

A system, method and device for filtering noise from image data is disclosed. The method includes: (a) obtaining an input optical signal input to an optical system, (b) modulating the input optical signal to obtain a modulated image signal, wherein the input optical signal is modulated based at least in part on manipulating a point spread function (PSF) of the optical system, (c) providing the modulated image signal to a read-out integrated circuit (ROIC), and (d) obtaining a filtered image signal from the ROIC, wherein the ROIC filtered the modulated image signal to remove at least part of excess noise.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

The present invention provides a pressure sensing module, a pressure sensor, and an electronic device, relating to the field of micro-electromechanical technology, and is used to reduce the effects of thermo-viscoplastic stress and / or thermo-viscoelastic stress introduced by metal traces and / or metal pads on piezoresistors, thereby improving the performance of the pressure sensing module. The pressure sensing module includes: a first substrate structure, a second substrate structure, a plurality of piezoresistors disposed on a surface of a pressure-sensitive film close to the second substrate structure, a plurality of interconnecting metal wires, and a plurality of metal pads; the second substrate structure is located on one side of the first substrate structure; the plurality of interconnecting metal wires are electrically connected to the plurality of piezoresistors so that the plurality of piezoresistors are electrically connected to each other; the metal pads are electrically connected to the first metal wires and also to a readout integrated circuit; wherein at least some of the plurality of interconnecting metal wires are located on the second substrate structure; and / or at least some of the plurality of metal pads are located on the second substrate structure.

A spectrometer apparatus (110) and method of obtaining spectroscopy information about at least one object (112) are disclosed. The spectrometer device (110) comprises: i. At least one light source (114) for generating illumination light (116) for illuminating the object (112); ii. At least one detector (128) for detecting the detection light (130) from the object (112) and generating at least one detector signal; iii. At least one drive unit (138) for electrically driving the light source (114); iv. At least one multi-channel readout integrated circuit (139) wherein each channel of the multi-channel readout integrated circuit (139) comprises at least one buffered direct injection (BDI) circuit (141) wherein the BDI circuit (141) is configured to read out the detector signal wherein the BDI circuit (141) is configured to generate at least one item of information regarding an electrically measurable amount required to drive the light source (114) wherein the BDI circuit (141) is configured to drive the light source (114). A multi-channel readout integrated circuit (139) comprising at least one multi-channel readout application-specific integrated circuit (ASIC) (142) configured for synchronously sampling the detector signal and the item of information regarding the electrically measurable amount required to drive the light source (114); and v. At least one evaluation unit (136) for evaluating at least one detector signal generated by the detector (128) and for deriving the spectroscopy information about the object (112) from the detector signal, the evaluation unit (136) is configured for taking into account the item of information regarding the electrically measurable quantity required to drive the light source (114) when deriving the spectroscopy information from the detector signal.

This invention discloses a narrow-angle polarization detection integrated chip covering communication frequency bands and its fabrication method, comprising: a top-layer chip, using silicon as a substrate, wherein the silicon has an array of through-holes; an array of through-hole grooves with an insulating layer on the upper surface of the silicon; a multi-dimensional composite metasurface, disposed within the array of through-hole grooves of the insulating layer and in contact with the silicon; silicon through-hole metal connecting pillars, uniformly arrayed within the through-holes of the silicon, and connected to each other through the insulating layer; electrodes, evenly distributed above the insulating layer on the upper surface of the silicon with the array of through-hole grooves of the insulating layer as the center, and in contact with the silicon through-hole metal connecting pillars; and a bottom-layer chip, containing a readout integrated circuit module, connected to the top-layer chip via an indium tin alloy. This invention achieves chip-level ultra-narrow-angle detection, integrates the characteristics of anisotropic trench structures, and expands the detection capability of silicon-based chips across the entire communication frequency band, making it suitable for wafer-level production.

The invention relates to a touch circuit and a touch sensing display device including the same. The touch circuit includes: a micro-control circuit; and a readout integrated circuit configured to communicate with the micro-control circuit through a selection signal line, a clock signal line, a master output slave input (MOSI) signal line, and a master input slave output (MISO) signal line, in a first period, the readout integrated circuit generates a first interrupt request signal indicating completion of touch sensing to be transmitted to the micro-control circuit through the MISO signal line, and in a second period different from the first period, the readout integrated circuit generates a second interrupt request signal indicating a type of error and whether an operation state of the readout integrated circuit is normal, the second interrupt request signal is transmitted to the micro-control circuit through the MOSI signal line.

An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.

An optoelectronic device includes at least one pixel comprising: a plurality of optical resonators, each optical resonator comprising a photodetecting structure confined between a first reflective metal layer and a second metal layer; and a connection microstructure that is arranged on a support made of dielectric material and is configured to electrically interconnect the second metal layers of the optical resonators belonging to the same pixel; and a readout integrated circuit arranged on a substrate and assembled with the pixel; the readout circuit comprising a buried readout electrode associated with the pixel and a metal or dielectric outer layer. The assembly comprising at least the first metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The second metal layers of the resonators of a pixel are connected to the associated readout electrode by way of a metal via connected to the connection microstructure and passing through the support.

An uncooled infrared focal plane array readout integrated circuit (200), and a detector. The readout integrated circuit (200) comprises a pixel circuit module (10) and a readout integrated circuit bias module (30). The pixel circuit module (10) comprises a pixel resistor (13), a correction voltage terminal (VEB), a first node (N1), a pixel bias sub-module (12), and a correction sub-module (11), wherein the pixel bias sub-module (12) is connected to the pixel resistor (13), and the correction sub-module (11) is connected to the correction voltage terminal (VEB), so as to correct a deviation of an output result from the readout integrated circuit (200) caused by a resistance deviation of the pixel resistor (13). The readout integrated circuit bias module (30) comprises a working resistor (R), a bias voltage provision module (33), and a feedback module (32), wherein a connection terminal of the bias voltage provision module (33) is connected to the feedback module (32), and an output end thereof is connected to one end of the working resistor (R); the other end of the working resistor (R) is connected to the first node (N1); the voltage of the bias voltage provision module (33) fluctuates with at least one of a correction voltage (Veb) and a target temperature of the pixel resistor (13); and the feedback module (32) generates a feedback current (I0) which corresponds to the voltage (Vd) of the first node (N1), and provides the feedback current (I0) to the bias voltage provision module (33).

Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.

A touch sensing display apparatus may include touch blocks, touch electrodes in each touch block, a readout integrated circuit (ROIC) for sensing the touch electrodes to obtain touch raw data, and a micro control circuit connected to the ROIC through a serial peripheral interface (SPI). A memory of the ROIC may have a 16-bit row unit storage system. Each of a TX memory and an RX memory of the micro control circuit may have a 32-bit row unit storage system. In a touch period for touch driving, J pieces of SPI data having a 12-bit transfer system corresponding to address and command data for reading the touch raw data may be transferred from the micro control circuit to the ROIC, and K pieces of SPI data having a 12-bit transfer system corresponding to the touch raw data may be transferred from the ROIC to the micro control circuit.

A system, method and device for filtering noise from image data is disclosed. The method includes: (a) obtaining an input optical signal input to an optical system, (b) modulating the input optical signal to obtain a modulated image signal, wherein the input optical signal is modulated according to a predefined frequency, (c) demodulating, by a read-out integrated circuit (ROIC), the modulated image signal to obtain a filtered image signal in which at least part of 1 / fn noise is filtered from the image data, wherein the modulated image signal is demodulated based at least in part on a synchronizer signal, and (d) providing the filtered image signal.

A system, method and device for filtering noise from image data is disclosed. The method includes: (a) obtaining an input optical signal input to an optical system, (b) modulating the input optical signal to obtain a modulated image signal, wherein the input optical signal is modulated based at least in part on manipulating a point spread function (PSF) of the optical system, (c) providing the modulated image signal to a read-out integrated circuit (ROIC), and (d) obtaining a filtered image signal from the ROIC, wherein the ROIC filtered the modulated image signal to remove at least part of excess noise.

A touch sensing display apparatus may include touch blocks, touch electrodes in each touch block, a readout integrated circuit (ROIC) for sensing the touch electrodes to obtain touch raw data, and a micro control circuit connected to the ROIC through a serial peripheral interface (SPI). A memory of the ROIC may have a 16-bit row unit storage system. Each of a TX memory and an RX memory of the micro control circuit may have a 32-bit row unit storage system. In a touch period for touch driving, J pieces of SPI data having a 12-bit transfer system corresponding to address and command data for reading the touch raw data may be transferred from the micro control circuit to the ROIC, and K pieces of SPI data having a 12-bit transfer system corresponding to the touch raw data may be transferred from the ROIC to the micro control circuit.

A readout integrated circuit is configured to read a sensing signal from an optical sensing panel. The optical sensing panel includes a sensor array for fingerprint sensing. The readout integrated circuit includes a plurality of input terminals, a discharge circuit, and a control circuit. The input terminals are for coupling to output terminals of the optical sensing panel. The discharge circuit is coupled to one of the plurality of input terminals and is configured to discharge one of the plurality of output terminals of the optical sensing panel by a current during a readout. The readout integrated circuit reads a voltage of the output terminal as the sensing signal. The control circuit is coupled to the discharge circuit and is configured to output at least one control signal to control an operation period of the discharge circuit.

The invention provides a chip infrared spectrometer and a preparation method thereof, and the preparation method comprises the following steps: providing a readout integrated circuit wafer, and forming a plurality of miniature bolometer arrays on the readout integrated circuit wafer to obtain an infrared detector wafer; providing a second wafer, and preparing a filter array on the second wafer to obtain a filter wafer; and bonding the infrared detector wafer and the filter wafer, wherein the units of the micro bolometer array and the units of the filter array are in one-to-one correspondence on an incident light path. A chip infrared spectrometer comprises an infrared detector wafer and a filter wafer, wherein the infrared detector wafer is composed of a readout integrated circuit wafer, a conductive base and a miniature bolometer array. The surface of the filter wafer is a metasurface pattern, and a cavity is formed in the back area of the pattern; the filter wafer is bonded on the infrared detector wafer, the miniature bolometers and the filters are in one-to-one correspondence on an incident light path, and a vacuum sealing cavity is formed on the surface of the infrared detector wafer.