4 results about "Readout integrated circuit" patented technology

A touch circuit includes a micro control circuit and a readout integrated circuit configured to communicate with the micro control circuit though a selection signal line, a clock signal line, a master output slave input (MOSI) signal line, and a master input slate output (MISO) signal line. In a first period, the readout integrated circuit generates a first interrupt request signal representing completion of touch sensing, and transfers the first interrupt request signal to the micro control circuit through the MISO signal line. In a second period which differs from the first period, the readout integrated circuit generates a second interrupt request signal, representing a kind of error and whether an operation state thereof is normal, and transfers the second interrupt request signal to the micro control circuit through the MOSI signal line.

This invention discloses a narrow-angle polarization detection integrated chip covering communication frequency bands and its fabrication method, comprising: a top-layer chip, using silicon as a substrate, wherein the silicon has an array of through-holes; an array of through-hole grooves with an insulating layer on the upper surface of the silicon; a multi-dimensional composite metasurface, disposed within the array of through-hole grooves of the insulating layer and in contact with the silicon; silicon through-hole metal connecting pillars, uniformly arrayed within the through-holes of the silicon, and connected to each other through the insulating layer; electrodes, evenly distributed above the insulating layer on the upper surface of the silicon with the array of through-hole grooves of the insulating layer as the center, and in contact with the silicon through-hole metal connecting pillars; and a bottom-layer chip, containing a readout integrated circuit module, connected to the top-layer chip via an indium tin alloy. This invention achieves chip-level ultra-narrow-angle detection, integrates the characteristics of anisotropic trench structures, and expands the detection capability of silicon-based chips across the entire communication frequency band, making it suitable for wafer-level production.

Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.

A touch sensing display apparatus may include touch blocks, touch electrodes in each touch block, a readout integrated circuit (ROIC) for sensing the touch electrodes to obtain touch raw data, and a micro control circuit connected to the ROIC through a serial peripheral interface (SPI). A memory of the ROIC may have a 16-bit row unit storage system. Each of a TX memory and an RX memory of the micro control circuit may have a 32-bit row unit storage system. In a touch period for touch driving, J pieces of SPI data having a 12-bit transfer system corresponding to address and command data for reading the touch raw data may be transferred from the micro control circuit to the ROIC, and K pieces of SPI data having a 12-bit transfer system corresponding to the touch raw data may be transferred from the ROIC to the micro control circuit.