573 results about "Ir detector" patented technology

The invention discloses a method and system for assimilating meteorological satellite hyperspectral error non-Gaussian distribution data based on quantum computing, and the method carries out the generalized quality control of meteorological satellite hyperspectral data in consideration of an outlier value on the observation brightness temperature and equivalent data of a satellite hyperspectral infrared detector channel. Comprising the steps of channel optimal selection considering quantum information entropy, deviation correction based on artificial intelligence generalized integration generation type deep learning and cloud detection based on a minimum residual method to remove cloud view field point data, so that quality control data is obtained. And performing quantum space solution on the quantum non-Gaussian increment four-dimensional variational assimilation model compatible with error Gaussian distribution and non-Gaussian distribution based on quality control data to obtain analysis field data, and solving the problem that the brightness temperature assimilation of the hyperspectral infrared channel with error non-Gaussian distribution (or obvious non-Gaussian characteristics) is limited in the prior art. Meanwhile, the method is high in solving speed, and the obtained analysis field data has good precision and calculation timeliness.

The invention discloses a micro-channel liquid cooling method, device, equipment and medium for heat dissipation of an integrated circuit chip, and the method comprises the steps: collecting temperature data of different depths of the surface and the interior of the chip in real time through a temperature sensor array, an embedded temperature probe and an infrared detector, and generating a three-dimensional temperature field matrix; carrying out region division according to the microchannel physical layout of the chip, mapping a three-dimensional temperature field matrix, and generating a region temperature field matrix; calculating a thermal load change rate of the regional temperature field matrix, and generating a main flow regulation parameter by adopting a PI D algorithm based on the change rate; calculating branch flow adjusting parameters by combining the temperature field matrixes of the adjacent areas and a pre-constructed topological association table, and fusing the main flow adjusting parameters and the branch flow adjusting parameters to generate a flow adjusting quantity instruction. According to the invention, dynamic and accurate regulation and control of chip heat dissipation are realized, and the heat dissipation efficiency is effectively improved.

The invention provides an optimized II-type superlattice infrared detector chip bottom filling method, a preparation method and an infrared detector, and belongs to the field of infrared detectors. The problem that the performance of an infrared detector is affected due to the fact that the filling glue filled in an existing bottom filling process is prone to generating holes and finally causes defects during imaging of an infrared focal plane detector chip is solved. The method comprises the following steps that a dielectric layer is deposited on the surface of an epitaxial material after table top etching is completed, and the height of the dielectric layer is larger than the table top etching depth; after the dielectric layer is deposited, the surface of the dielectric layer is polished to be flat; opening holes in the dielectric layer on the surface of the table board; preparing an indium column in the opening of the dielectric layer, and then performing flip-chip bonding interconnection on the indium column at the epitaxial material end and the indium column on the readout circuit; filling bottom filling glue between the dielectric layer and the reading circuit after the reverse welding interconnection, and then curing the filling glue at high temperature; the invention is applied to the type-II superlattice infrared detector.

An image sensor system (200) sensitive to electromagnetic irradiation and comprising: a first pixel area (210) comprising an array of synchronous first image sensor pixels (211); and an infrared pixel arca (240) comprising infrared image sensor pixels (241, 242) sensitive to infrared irradiation; and a change detector area (230) comprising multiple asynchronous change detectors (231, 232), and a synchronous intensity read-out circuitry (260). A first electromagnetic receptor (215) of a respective first image sensor pixel (211) is electrically coupled to the synchronous intensity read-out circuitry (260). An infrared detector (245) of a respective infrared image sensor pixel (241, 242) is electrically coupled to a respective first asynchronous change detector (231) out of the multiple asynchronous change detectors (231, 232). The change detector area (230) is a distinct part of the image sensor system (200) which is separate from the pixel areas (210, 240).

The invention provides a short-wave infrared detector digital alloy material and a preparation process thereof. The preparation process comprises the following steps: growing a GaSb buffer layer on the surface of an n-type GaSb substrate; starting a first In furnace, and growing an InAs layer on the surface of the GaSb buffer layer in cooperation with an As beam; starting a second In furnace, and growing a quaternary solid solution layer matched with a GaSb buffer layer lattice on the surface of the InAs layer in cooperation with the Ga furnace and the AsSb beam; and alternately growing an InAs layer and a quaternary solid solution layer on the surface of the quaternary solid solution layer to generate a superlattice structure until the total thickness of the superlattice structure reaches a set target thickness, thereby obtaining the digital alloy material. According to the digital alloy material for the short-wave infrared detector and the preparation technology of the digital alloy material, the short-wave infrared detector can be expanded to the wave band ranging from 2.4 micrometers to 2.8 micrometers at the 50% cut-off wavelength.

The invention is suitable for the technical field of infrared detection, and provides a high-dynamic infrared readout circuit with asynchronous integral zero clearing, which comprises a CTIA integral circuit, a gain control module, a capacitor reset module and an N-bit counter, wherein the CTLA integrating circuit comprises a CTIA amplifier, a first capacitor, a second capacitor, a first switch tube and a second switch tube; the CTIA amplifier, the first capacitor, the second capacitor, the first switch tube and the second switch tube are connected in parallel; the first switch tube is connected in series with one side of the first capacitor; the output end of the CTIA integrating circuit is connected with the input end of the gain control module, the output end of the gain control module is connected to the input end of the capacitor reset module, and the output end of the capacitor reset module is connected with an N-bit counter. The dynamic range of the reading circuit can be effectively improved, the infrared imaging quality is enhanced, and the method can be applied to linear array and area array infrared detectors in the future.

The invention provides an infrared detector driving and adjusting circuit, relates to the technical field of infrared detector driving, and constructs an infrared detector adjusting circuit to perform voltage adjustment, temperature judgment, power-on and power-off control and image signal generation on an infrared detector. Calculating an operation performance coefficient of each device, and calculating a device accumulation performance coefficient of each device according to the operation performance coefficient of each device; according to the device accumulation performance coefficient, accumulation adjustment labeling and performance parameter adjustment are carried out, and the infrared detector adjustment circuit has remarkable advantages in the aspect of solving the problems existing in a traditional infrared detector adjustment circuit and has great significance in improving the performance stability and reliability of an infrared detector.

The invention relates to the technical field of detector testing, and discloses a multi-parameter testing system and method for thermal characteristics of a refrigeration type infrared detector, and the system comprises a cooperative measurement module, a coupling analysis module, an optimization testing module, and a data analysis platform. The method corresponds to the system. According to the application, the temperature field, stress distribution and local heat flow data of the to-be-tested detector can be synchronously acquired, and the sensor is calibrated in a low-temperature vacuum environment, so that data drift in an extreme environment is avoided, and the accuracy of actually measured data is ensured; a coupling simulation model is built based on a heat conduction equation, a reduced order model and a Maxwell model, parameters are corrected by means of measured data, and thermal load, thermal mismatch stress and refrigeration efficiency evaluation results are accurately output; the cold screen coating performance and the cold finger thermophysical property of the detector can be tested, and the special test blank of key components is filled up; and multi-source data is integrated to identify anomalies, a three-dimensional thermal field interface is output, the optimization design is assisted, and the test comprehensiveness and accuracy are integrally improved.

The present invention relates to the field of infrared detector dewar technology, and specifically provides an adsorbent adaptive packaging structure and installation method, including: a fixing ring, including: an annular portion, the annular portion having an opening, the annular portion forming two end portions at the opening; two connecting portions, the two connecting portions being respectively connected to one end of the two end portions of the annular portion; a first support leg and a second support leg, the first support leg and the second support leg being respectively connected to the other end of the two connecting portions; wherein the two end portions are arranged to overlap, or the two connecting portions are arranged to overlap, or the first support leg and the second support leg are arranged to overlap. The present invention optimizes the fixing ring into an elastic adaptive structure, making it more convenient and firm to fix the adsorbent, and optimizes one end of the support plate into an arc structure, so that it can cooperate well with the limiting groove of the dewar shell.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.

The invention relates to a dual-band anti-reflection zinc selenide metallized light window and a preparation method thereof, the dual-band anti-reflection zinc selenide metallized light window comprises a front film system, a zinc selenide substrate, a back film system and edge metallized films, the zinc selenide substrate is located between the front film system and the back film system, and the edge metallized films are located at two ends of the zinc selenide substrate; the front film system and the back film system are formed by alternately overlapping zinc sulfide layers and ytterbium fluoride film layers; the edge metallized film is formed by overlapping a chromium film layer, a copper film layer, a nickel film layer and a gold film layer. According to the invention, the two sides of the zinc selenide substrate are respectively provided with an anti-reflection film system structure, so that the light energy of two wave bands of 3500-5000nm and 8000-12000nm is improved; the zinc sulfide and ytterbium fluoride film layer is adopted, so that the stress is lower, and the dual-band anti-reflection optimization effect is better; by improving the edge metallized film stacking structure, the problem that the soft optical material and the metallized film are not firmly combined is solved, and a new scheme is provided for infrared detector welding.

The invention relates to the technical field of infrared detection, and discloses an infrared detector dead pixel detection method, which comprises the following steps: acquiring a current scene image during the working period of an infrared detector and a plurality of frames of isothermal uniform surface background images acquired by the infrared detector at different working temperatures to form a background image sequence; performing singular point detection on each frame of image in the current scene image and the background image sequence by adopting an improved wavelet transform algorithm, screening out effective singular points, and calculating a singularity value of each effective singular point; based on the singular point detection result, the singularity value difference and historical background image data, static dead pixels, dynamic dead pixels and noisy points are distinguished through a multi-layer judgment rule, and a dead pixel detection result is obtained; and periodically evaluating the accuracy of the defective pixel detection result, and dynamically calibrating the detection parameters according to the evaluation result. Through collaborative analysis of the current working image and the multi-temperature background image sequence, dead pixels can be accurately detected in real time in the normal working process of the detector.

The invention discloses a narrow-band metasurface infrared detector based on a mirror image coupling medium BIC and a manufacturing method of the narrow-band metasurface infrared detector, and belongs to the technical field of crossing of infrared detection and metamaterials. The infrared detector comprises a medium metasurface functional layer, a medium film layer, an upper electrode metal layer, a pyroelectric functional layer and a lower electrode metal layer which are sequentially arranged from top to bottom; the upper electrode metal layer and the lower electrode metal layer are respectively and electrically connected with a test circuit, the dielectric metasurface function layer comprises a plurality of metasurface micro-nano, the metasurface micro-nano is periodically arranged to form an array form, and a mirror image coupling type BIC mode is excited. The device has the advantages of narrow-band response, high absorption, insensitivity to the polarization state of incident light, capability of widening the processing tolerance and flexible tuning of multiple parameters.

The invention relates to an aliasing image target recognition and positioning algorithm based on sub-view-field shape modulation coding, relates to the technical field of aliasing image target recognition and view field judgment and positioning, and solves the technical problem that the scale and view field of a detector cannot be considered when large-view-field and high-resolution imaging is realized under the condition of a limited detector in the prior art. The algorithm comprises the following steps: identifying a foreground target; tracking a target rotation state; and judging the relevance between the target motion trail and the light spot shape change trend and inversely solving the actual spatial position. According to the aliasing image target recognition and positioning algorithm based on sub-view-field shape modulation coding, space-based early warning and large-width detection are achieved through the advantages of low power consumption and low cost of a small target surface detector, and the bottleneck that large-view-field imaging of an infrared optical system is limited by the manufacturing process of an infrared detector is broken through. According to the invention, through continuous frame light spot morphological feature extraction and trajectory-shape double-domain correlation modeling, unique determination and high-precision positioning of a view field of an object space where a target is located are realized.

The invention relates to the technical field of semiconductor photoelectric device test and diagnosis, in particular to an infrared focal plane process diagnosis method based on machine learning, which comprises the following steps of: firstly, collecting photocurrent spectrum data of a plurality of pixel units on a focal plane array, and extracting a spectrum feature vector after preprocessing; secondly, a machine learning model is trained to obtain a performance prediction model, and key spectral features are obtained through feature importance evaluation; and finally, in combination with semiconductor physical simulation, establishing quantitative correlation between the key spectral characteristics and manufacturing process parameters, and completing diagnosis of production process links. The invention also comprises an optimization method. According to the method, spectral deep form information neglected by a conventional method is deeply mined and quantified, high-precision prediction of the response rate of each pixel of the whole focal plane array is realized by constructing characteristics closely related to a device microscopic physical mechanism, and correlation between spectral characteristics and process structure parameters is established, so that the accuracy of the device is improved. And the performance optimization and the process rapid iteration of the infrared detector chip are guided.

The invention discloses a miniature integrated infrared gas sensor chip, which belongs to the technical field of sensors, and comprises a first wafer and a second wafer, and the first wafer and the second wafer are connected in a combination manner and form an optical gas chamber; a vent hole is formed above the first wafer, and a reflective film layer is plated on the inner wall of the optical gas chamber and is arranged to only allow infrared light emitted by the infrared light source to pass through; a periodic micro-nano structure is arranged in the optical gas chamber; the surface of the second wafer is covered with an insulating film layer, and an infrared light source and an infrared detector are arranged above the insulating film layer. An optical gas chamber is formed through double-wafer bonding, a periodic micro-nano structure is integrated to enhance interaction between infrared light and gas, environmental interference is suppressed in combination with a double-channel differential detector, and meanwhile stability and selectivity are improved through multi-layer structures such as a reflective film layer, a protective film layer and a composite insulating film layer. And finally, a miniaturized and high-sensitivity gas detection function is realized.

The invention provides an infrared detector deep mesa etching process based on three layers of masks and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer, and curing and forming; depositing a hard mask serving as an etching barrier layer; depositing an inorganic oxide; spin-coating photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photoetching process; taking the mesa pattern as a mask, and transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by adopting plasma until the surface of the superlattice epitaxial layer is exposed; the three layers of masks are used as blocking, deep etching is carried out through inductively coupled plasma, and the etching depth is 5.6-6 microns; a post-processing step; according to the process provided by the invention, high-quality and high-aspect-ratio mesa etching can be realized on the premise of not introducing extra pollution and remarkably increasing the cost, and the process is suitable for preparing a deep-mesa and high-aspect-ratio device.

The utility model discloses a pixel unit circuit, a readout circuit and an infrared imaging sensor, and the pixel unit circuit comprises a front-end reading module which is used for converting a light current inputted by an infrared detector array into a light voltage and improving the output swing of the light voltage; the amplification and comparison module is connected with the front-end reading module, and is used for sampling the photovoltage, amplifying a change value of the photovoltage to obtain an amplified photovoltage and comparing the amplified photovoltage with a threshold voltage; and the signal resetting module is connected with the amplification and comparison module and is used for outputting a resetting signal to the amplification and comparison module to trigger the amplification and comparison module to sample the light voltage and outputting an event signal according to a comparison result of the amplified light voltage and the threshold voltage. According to the utility model, the front-end reading module is used for increasing the swing of the output photovoltage, so that the sensitivity of the photovoltage signal to noise and interference in the transmission process is reduced, the anti-interference capability of the signal is enhanced, and the signal-to-noise ratio is improved.

The invention discloses a focusing method and system of an infrared camera, relates to the field of motor control, and solves the problems of high labor cost, high possibility of wrong shooting, low efficiency and high possibility of focusing failure in the existing infrared focusing method technology. The focusing method of the infrared camera comprises the following steps: when a target shooting position is received, moving an infrared lens to a forward maximum defocus position; taking the coarse focal depth distance as a step length, carrying out peak searching, obtaining a maximum clear value and a secondary clear value, and obtaining a corresponding encoder position; moving the infrared lens from the maximum clear value to the secondary clear value by taking a fine focal depth distance as a step length, and searching the maximum clear value again; and the infrared lens moves to the encoder position corresponding to the maximum clear value, and focusing is completed. A focusing system of an infrared camera comprises an infrared detector, a system control module, a motor driver and an encoder. The method is suitable for the field of automatic focusing of the infrared camera.

The invention discloses a polarization-dependent bipolar infrared detector based on a corner heterojunction, a preparation method and a photocurrent response polarity regulation and control method. The polarization-dependent bipolar infrared detector comprises a substrate, a corner Van der Waals heterojunction and a transferable metal electrode, wherein the corner Van der Waals heterojunction and the transferable metal electrode are sequentially stacked on the substrate from bottom to top; the corner Van der Waals heterojunction is obtained by sequentially stacking p-type semiconductors, n-type semiconductors and p-type semiconductors to form an npn junction and forming a corner by changing the crystal orientation included angle of the two p-type semiconductors; a built-in electric field is used for driving photon-generated carrier separation, so that the infrared detector works in a photovoltaic mode.

The invention relates to the technical field of space satellite thermal control, in particular to a space satellite thermal control system based on self-adaptive thermal transport, which comprises a thermochromic intelligent thermal control coating coated on the whole outer surface of a space satellite, the variable-direction active heat compensation pump loop is arranged in the space satellite; the variable-direction active heat compensation pump loop is arranged between the satellite main illuminated face and the satellite main nightside and used for conducting heat transfer between the satellite main illuminated face and the satellite main nightside. The structure is simple, a basic frame of a heat control system is built, through cooperation of coating covering and a heat pump loop, regulation and transfer of satellite surface heat are preliminarily achieved, the temperature difference of the satellite outer surface is effectively reduced, the temperature uniformity of the outer surface is improved, effective guarantee is provided for a space satellite to avoid detection of an infrared detector, and the application range is wide. And the space satellite is safer and more hidden.

The invention provides a liquid heat conductivity coefficient measurement method without absolute thickness information, and belongs to the field of liquid heat conductivity coefficient measurement. The problem that the universality and the accuracy are seriously restricted due to the fact that an unsteady state method must depend on the absolute thickness of a sample to be detected is solved. The method comprises the following steps: placing a to-be-detected liquid sample in a crucible, and adjusting an optical system to enable an infrared detector to be aligned with a to-be-detected area; changing the thickness of the liquid sample through an electric displacement table to obtain a plurality of thickness values; corresponding to each thickness, using a pulse laser to heat the sample, detecting a signal of the overheat residual temperature of the upper surface of the crucible along with time change, and obtaining a normalized temperature rise curve; repeatedly measuring under a plurality of different liquid thicknesses, and recording the half-peak time of the normalized heating curve corresponding to each thickness value; and calculating the thermal diffusion coefficient of the to-be-measured liquid according to the proportional relation between the half-peak time and the thickness square of the liquid, thereby determining the heat conductivity coefficient of the liquid. The method is used in practical industrial environments such as thermoelectricity and lithium ion batteries.

The invention discloses an infrared thermal imaging data transmission and remote monitoring system based on wireless communication. The system comprises an unmanned aerial vehicle autonomous cruise module for realizing preset path planning and dynamic obstacle avoidance; the infrared thermal imaging detection module is used for detecting VOCs leakage; the wireless communication and data transmission module supports real-time return of high-definition infrared images and gas data based on multi-mode communication; the remote monitoring and intelligent analysis platform deploys an AI gas recognition algorithm at the cloud, automatically marks the leakage position and estimates the diffusion range. According to the infrared thermal imaging data transmission and remote monitoring system based on wireless communication, through autonomous cruise of the unmanned aerial vehicle, the high-sensitivity infrared detector, real-time wireless transmission and cloud intelligent analysis, full-automatic, large-range and high-precision VOCs leakage monitoring is achieved, and industrial safety and environmental protection supervision efficiency are remarkably improved.

The invention relates to the technical field of micro-nano processing of semiconductor devices, in particular to an InAs / GaSb class-II superlattice mesa wet etching solution and a using method thereof, the etching solution is an aqueous solution comprising citric acid, phosphoric acid and hydrogen peroxide, the citric acid is citric acid monohydrate, the mass concentration of the phosphoric acid is 85%, and the mass concentration of the hydrogen peroxide is 30%. By optimizing the proportion of the components of the corrosive liquid and introducing an adjustable corrosion time sequence and a post-treatment technique, high repeatability and high uniformity of the corrosion process can be realized on the premise of keeping the intrinsic electrical properties of the material, the morphology quality of the mesa structure can be remarkably improved, and the smooth and low-damage mesa side wall and surface can be obtained. The method lays a reliable process foundation for preparing a high-performance InAs / GaSb class-II super-crystal-based infrared detector, is particularly beneficial to suppressing electric leakage of the side wall of a device, reduces dark current, and finally improves the quantum efficiency and imaging performance of the device.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention discloses a gain-adaptive infrared focal plane reading circuit and a gain control method, and relates to an infrared detector technology, and the circuit comprises a voltage comparison module which is used for selecting a group of voltage signals in a pixel array of an infrared focal plane, carrying out the voltage comparison of the voltage signals with a reference voltage, and outputting a voltage comparison result; the data processing module is connected with the voltage comparison module and is used for outputting a comparison signal according to a data processing result; the gain scrolling control module is used for performing gain scrolling control on a signal GAINlt according to the comparison signal; r: 0gt; and performing corresponding addition, subtraction counting or holding operation through the column-level array, and decoding an operation result through a decoding circuit so as to provide a gain control signal for the column-level array. A gain self-adaptive adjustment function is designed in the reading circuit, the gain of the reading circuit is automatically adjusted by detecting the intensity of an optical signal, signal reading and processing can be well carried out on a weak light part and a strong light part of a detected object, and the flexibility of a system is improved.

The invention relates to the technical field of gas sensors, and provides a wide-range ethylene oxide gas sensor based on non-dispersive infrared and a measuring method.The wide-range ethylene oxide gas sensor comprises a gas detection cavity, a light source arranged in the gas detection cavity, an infrared detector and a spherical reflecting surface, and the light source and the spherical reflecting surface are oppositely arranged; the gas detection cavity is used for introducing to-be-detected gas, light emitted by the light source is reflected by the spherical reflecting surface and then detected by the infrared detector, and the gas concentration is calculated according to a detection signal value; an ultraviolet lamp device is also arranged on the inner wall of the gas detection cavity, the ultraviolet lamp device comprises an ultraviolet light source and a substrate arranged in an irradiation area of the ultraviolet light source, and a photocatalyst is arranged on the substrate. By introducing the spherical reflection structure and the ultraviolet decomposition device, high-concentration adaptation and self-cleaning functions are realized, and the response speed, accuracy and long-term stability of detection are effectively improved by combining differential processing and an environment compensation algorithm.

The invention discloses a wafer thickness measuring device and method, and relates to the technical field of optics, the wafer thickness measuring device comprises an infrared low-coherence light source, a beam splitter prism, a reflector, a carrying table, a driving part, an infrared detector and a data processing unit, and a light beam emitted by the infrared low-coherence light source is split by the beam splitter prism and then enters the reflector and a wafer to be measured; the light is reflected by the reflector and the wafer to be detected along the original path, then enters the beam splitter prism and enters the infrared detector after passing through the beam splitter prism; the driving part is connected with the reflector and used for driving the reflector to move back and forth relative to the beam splitter prism, and the data processing unit is connected with the driving part and the infrared detector and used for obtaining a signal spectrum according to scanning information of the driving part and light signal intensity information measured by the infrared detector and obtaining peak position information of two interference signals in the signal spectrum. And obtaining the thickness of the to-be-measured wafer according to the peak position information and the refractive index of the to-be-measured wafer. According to the wafer thickness measuring device and method, accurate measurement of the wafer thickness can be realized.

The invention provides an infrared detector readout circuit repairing method, and relates to the technical field of silicon readout circuit repairing, and the method comprises the steps: screening chips with abnormal electrical properties from processed circuit chips, and determining the relative coordinates of a problem line and a nearest bonding pad according to the fault type; under an FIB-SEM double-beam scanning electron microscope, the sample table is moved to reach the relative coordinates, and a reference pattern with the depth shallower than the thickness of the metal layer is formed through etching with the relative coordinates as the center; measuring a problem line operation point coordinate by taking the reference graphic feature point as a zero point; performing etching exposure on the coordinate area of the operation point by using an FIB-SEM double-beam scanning electron microscope; and carrying out line repairing operation. The problems that the reference point distance is long and the positioning deviation is large are effectively solved, and accurate positioning of a small-feature-size circuit needing to be operated in the infrared detector reading circuit repairing process is achieved.

The invention relates to an infrared pot cover shape non-uniformity correction system based on scene gradient processing and a correction algorithm thereof. The system comprises an image input stream module, an initialization module, a down-sampling module, a median filtering module, a horizontal and vertical gradient processing module, an image reconstruction module, a bilinear interpolation module, an up-sampling module, an algorithm processing updating matrix module and an image output stream module which are connected in sequence. The median filtering module, the horizontal and vertical gradient processing module and the image reconstruction module are respectively connected with the RAM through a cache; the bilinear interpolation module and the up-sampling module are respectively connected with the FIFO through a cache, and the algorithm processing updating matrix module is connected with the DDR through a cache. The method has the advantages that the pot cover effect of an infrared image can be directly improved, system-level optimization of the infrared imaging quality is achieved, the method is adaptive to various types of infrared detectors after an input data protocol is configured, codes do not need to be changed one by one, and the method is low in hardware scheme resource consumption, high in convergence speed and high in transportability and universality.