1039 results about "Ir detector" patented technology

The invention discloses a method and system for assimilating meteorological satellite hyperspectral error non-Gaussian distribution data based on quantum computing, and the method carries out the generalized quality control of meteorological satellite hyperspectral data in consideration of an outlier value on the observation brightness temperature and equivalent data of a satellite hyperspectral infrared detector channel. Comprising the steps of channel optimal selection considering quantum information entropy, deviation correction based on artificial intelligence generalized integration generation type deep learning and cloud detection based on a minimum residual method to remove cloud view field point data, so that quality control data is obtained. And performing quantum space solution on the quantum non-Gaussian increment four-dimensional variational assimilation model compatible with error Gaussian distribution and non-Gaussian distribution based on quality control data to obtain analysis field data, and solving the problem that the brightness temperature assimilation of the hyperspectral infrared channel with error non-Gaussian distribution (or obvious non-Gaussian characteristics) is limited in the prior art. Meanwhile, the method is high in solving speed, and the obtained analysis field data has good precision and calculation timeliness.

The invention provides a superlattice infrared detector chip manufacturing method, and belongs to the technical field of infrared detector manufacturing. The problem that the product performance or the product yield is low due to the fact that the precision fluctuation of the photoetching technology when the hard mask is removed is not considered in the current hard mask removing scheme is solved; comprising the following steps: forming a hard mask: growing the hard mask with a certain thickness on the surface of a wafer made of a superlattice material; photoetching an upper electrode table top; etching a hard mask: taking the photoresist as a mask, and etching the hard mask by adopting an ICP (Inductively Coupled Plasma) technology to obtain an upper electrode mesa mask pattern; degumming and cleaning an upper electrode table board; photoetching a lower electrode table board: adopting photoresist as a mask of a lower electrode table board area, and manufacturing the lower electrode table board area through a photoetching technology; carrying out ICP etching on the table board; performing wet etching on the table board; degumming and cleaning a lower electrode table board; forming a passivation layer film; opening holes in the passivation layer; manufacturing a gold electrode; the method is applied to preparation of the superlattice infrared detector chip.

The invention discloses a micro-channel liquid cooling method, device, equipment and medium for heat dissipation of an integrated circuit chip, and the method comprises the steps: collecting temperature data of different depths of the surface and the interior of the chip in real time through a temperature sensor array, an embedded temperature probe and an infrared detector, and generating a three-dimensional temperature field matrix; carrying out region division according to the microchannel physical layout of the chip, mapping a three-dimensional temperature field matrix, and generating a region temperature field matrix; calculating a thermal load change rate of the regional temperature field matrix, and generating a main flow regulation parameter by adopting a PI D algorithm based on the change rate; calculating branch flow adjusting parameters by combining the temperature field matrixes of the adjacent areas and a pre-constructed topological association table, and fusing the main flow adjusting parameters and the branch flow adjusting parameters to generate a flow adjusting quantity instruction. According to the invention, dynamic and accurate regulation and control of chip heat dissipation are realized, and the heat dissipation efficiency is effectively improved.

The invention provides an optimized II-type superlattice infrared detector chip bottom filling method, a preparation method and an infrared detector, and belongs to the field of infrared detectors. The problem that the performance of an infrared detector is affected due to the fact that the filling glue filled in an existing bottom filling process is prone to generating holes and finally causes defects during imaging of an infrared focal plane detector chip is solved. The method comprises the following steps that a dielectric layer is deposited on the surface of an epitaxial material after table top etching is completed, and the height of the dielectric layer is larger than the table top etching depth; after the dielectric layer is deposited, the surface of the dielectric layer is polished to be flat; opening holes in the dielectric layer on the surface of the table board; preparing an indium column in the opening of the dielectric layer, and then performing flip-chip bonding interconnection on the indium column at the epitaxial material end and the indium column on the readout circuit; filling bottom filling glue between the dielectric layer and the reading circuit after the reverse welding interconnection, and then curing the filling glue at high temperature; the invention is applied to the type-II superlattice infrared detector.

The invention relates to the technical field of infrared detectors, and discloses a packaging structure of an infrared detector, which comprises an optical window, a bracket, an infrared detection chip and a substrate, the substrate is of a flat plate structure; the support is of a frame-shaped structure. The infrared detection chip is connected to the upper surface of the substrate; and the optical window and the bracket as well as the bracket and the substrate are welded through welding flux to form a packaging structure. According to the packaging structure, the requirements of miniaturization, light weight, diversification and low cost of the infrared detector module can be met. Meanwhile, the invention further provides a packaging method of the infrared detector.

The invention relates to a single-photon laser radar three-dimensional imaging system and method. An optical fiber laser is used for actively illuminating an imaging target; the single-photon APD array detector is used for receiving a laser echo signal reflected by a target; the near-infrared detector is used for realizing aiming; the upper computer is used for parameter setting and data receiving of the optical fiber laser, the single-photon APD array detector and the near-infrared detector, receiving active laser three-dimensional imaging data in a three-dimensional imaging state and realizing real-time display of a depth image and an intensity image; and the information processing board card is used for realizing synchronous triggering of the fiber laser and the single-photon APD array detector and data communication between the upper computer and the fiber laser and the single-photon APD array detector, and realizing preprocessing and three-dimensional reconstruction of APD data based on a time correlation single-photon counting method and in combination with space-time correlation characteristics of laser echo signals. According to the invention, the problem of insufficient detection capability of a single-photon laser three-dimensional imaging method under all-weather and low-signal-to-noise-ratio conditions is solved.

The invention discloses an infrared detector focal plane pixel evaluation and selection method and device based on a z score. The infrared detector focal plane pixel evaluation and selection method comprises the steps of obtaining to-be-evaluated data of each pixel in an infrared focal plane array device; preprocessing the to-be-evaluated data to filter bad pixels to obtain performance index data of each pixel after filtering; calculating an average value and a standard deviation of each performance index of all the filtered pixels; calculating a z score of the performance index corresponding to each pixel, and summarizing and adding the z scores of the performance indexes corresponding to each pixel to obtain a final z score result of the comprehensive performance index of each pixel; and selecting the pixel with the highest z score in each row of the infrared focal plane array device according to the final z score result of each pixel, and registering the selected pixel with the highest z score as the optimal pixel, so that all performance indexes are integrated, the comprehensively evaluated and registered optimal pixel is obtained, each index is improved to a certain extent, and the data quality is improved.

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

The utility model discloses an infrared narrowband optical filter with a working wave band of 3900-4100nm, the infrared narrowband optical filter comprises a substrate, a main film system and a secondary film system, the main film system is arranged on a first side of the substrate, the secondary film system is arranged on a second side of the substrate, the second side is opposite to the first side, the main film system is arranged on the first side, and the secondary film system is arranged on the second side of the substrate. The main film system comprises 26 high-refractive-index film layers and low-refractive-index film layers which are alternately overlaid outwards from the substrate according to the structure of the main film system, and the secondary film system comprises 38 high-refractive-index film layers and low-refractive-index film layers which are alternately overlaid outwards from the substrate according to the structure of the secondary film system. The infrared narrow-band optical filter can have a good light transmission effect within the wavelength range of 3900-4100 nm, the average transmittance is larger than 94%, the infrared narrow-band optical filter is highly cut off within the wave bands of 1000-3700 nm and 4300-6500 nm, the average transmittance is smaller than 1%, stray light interference can be effectively reduced, and the sensitivity and the detection efficiency of an infrared detector are improved.

An image sensor system (200) sensitive to electromagnetic irradiation and comprising: a first pixel area (210) comprising an array of synchronous first image sensor pixels (211); and an infrared pixel arca (240) comprising infrared image sensor pixels (241, 242) sensitive to infrared irradiation; and a change detector area (230) comprising multiple asynchronous change detectors (231, 232), and a synchronous intensity read-out circuitry (260). A first electromagnetic receptor (215) of a respective first image sensor pixel (211) is electrically coupled to the synchronous intensity read-out circuitry (260). An infrared detector (245) of a respective infrared image sensor pixel (241, 242) is electrically coupled to a respective first asynchronous change detector (231) out of the multiple asynchronous change detectors (231, 232). The change detector area (230) is a distinct part of the image sensor system (200) which is separate from the pixel areas (210, 240).

The invention provides a short-wave infrared detector digital alloy material and a preparation process thereof. The preparation process comprises the following steps: growing a GaSb buffer layer on the surface of an n-type GaSb substrate; starting a first In furnace, and growing an InAs layer on the surface of the GaSb buffer layer in cooperation with an As beam; starting a second In furnace, and growing a quaternary solid solution layer matched with a GaSb buffer layer lattice on the surface of the InAs layer in cooperation with the Ga furnace and the AsSb beam; and alternately growing an InAs layer and a quaternary solid solution layer on the surface of the quaternary solid solution layer to generate a superlattice structure until the total thickness of the superlattice structure reaches a set target thickness, thereby obtaining the digital alloy material. According to the digital alloy material for the short-wave infrared detector and the preparation technology of the digital alloy material, the short-wave infrared detector can be expanded to the wave band ranging from 2.4 micrometers to 2.8 micrometers at the 50% cut-off wavelength.

The invention discloses an intelligent parking lot vehicle monitoring system, and belongs to the technical field of parking lot vehicle management. Comprising a vehicle end, and the vehicle end is connected with an intelligent monitoring platform. The vehicle end comprises a vehicle running state information acquisition module, an AI intelligent early warning module and an active braking module; the intelligent monitoring platform comprises a real-time monitoring module, a data processing module and a remote control module. Through the Internet of Things, big data and AI technologies, all-weather monitoring, data analysis and abnormal early warning of the vehicle are realized; through the active brake module and the passive infrared detector, the safety performance of the equipment in emergency is enhanced, and automatic deceleration or emergency stop can be realized to avoid accidents; the active braking module assists operators, the influence of the environment and dense personnel on operation is reduced, and the operation safety and stability are improved. And meanwhile, intelligent scheduling is supported, vehicle operation is optimized, and the empty driving rate is reduced. A mobile terminal management function enables a manager to master the dynamic state of a field at any time and efficiently deal with emergencies.

The invention discloses a preparation method of a double-wave infrared detector and a double-wave infrared section detector. The preparation method comprises the following steps: providing a GaSb substrate; sequentially growing a bottom contact layer, a medium wave absorption layer, a barrier layer, a long wave absorption layer and a top contact layer on the GaSb substrate; performing primary deposition of a passivation layer on the surface of the top contact layer, and performing primary etching from the absorption layer to the top contact layer; performing secondary deposition of a passivation layer in a covering manner, and performing secondary etching from the top contact layer to the bottom contact layer; depositing a passivation layer for the third time in a covering manner; holes are formed in the passivation layer of the table top and the passivation layer of the common electrode area, UBM metal TiPtAu is evaporated at the holes, and a detector chip is manufactured; the plasma exposure time of the surface of the absorption layer is reduced to the greatest extent; the detector chip and the In column of the reading circuit are interconnected to form the detector, and the prepared detector can obtain medium-wave infrared and long-wave infrared image information by using a single detector, and has excellent detection, identification and identification capabilities.

The invention discloses an infrared detector with a Van der Waals complementary barrier structure, a preparation method and an application. The structure of the detector is as follows: a P-type Si substrate is used as a substrate of the detector; growing a SiO2 dielectric layer on the P-type Si substrate; the black phosphorus layer covers the SiO2 dielectric layer and is used as a conducting channel; one end of the molybdenum disulfide layer covers one end of the black phosphorus layer, and the other end of the molybdenum disulfide layer is arranged on the SiO2 dielectric layer; the drain electrode is directly prepared on the other end of the black phosphorus layer and is in contact with the black phosphorus layer; the source electrode is prepared at the other end, not overlapped with the black phosphorus layer, of the molybdenum disulfide layer, and electric connection is achieved through overlapping of the molybdenum sulfide layer and the black phosphorus layer. According to the invention, high-sensitivity room temperature detection, ultra-fast response and sensing of multiple physical quantities such as light intensity, polarization and gas are realized, and the method has an application prospect in a miniaturized, low-power-consumption and multifunctional infrared detection system.

The invention relates to a powder detection method, system and device, a storage medium and a program product. The method comprises the following steps: determining a reference moving speed of a material carrying mechanism according to a signal coverage range of an electromagnetic wave generator and a preset moving time length of powder to be detected in the signal coverage range, and controlling the material carrying mechanism for carrying the powder to be detected to move according to the reference moving speed, controlling the electromagnetic wave generator to emit an electromagnetic wave signal to the to-be-detected powder at the position where the to-be-detected powder reaches the electromagnetic wave generator on the material carrying mechanism, and acquiring an infrared signal generated by the to-be-detected powder and received by the infrared detector at the position where the to-be-detected powder reaches the infrared detector on the material carrying mechanism; the detection result of the metal particles in the powder to be detected is determined according to the infrared signal; the electromagnetic wave signal is used for heating metal particles in the to-be-detected powder; according to the method, the detection sensitivity is improved, and the risks of missing detection and error detection are correspondingly reduced.

The invention provides a multi-target photoelectric laser detection system and a multi-target photoelectric laser detection method. The multi-target photoelectric laser detection system comprises a laser detector, a photoelectric detector and a scanning swing mirror, the photoelectric detector comprises a visible light detector and an infrared detector; the scanning oscillating mirror is mounted at the front end of the laser measuring and illuminating device; the photoelectric detector sends detected position information of a target to the laser detector and the scanning swing mirror, and the scanning swing mirror deflects according to the position information so as to adjust the optical axis of the laser detector. The multi-target photoelectric laser detection system of the scheme has the functions of auxiliary illumination, tracking distance measurement and searching distance measurement at the same time.

The invention provides a preparation method of a novel second-class superlattice infrared detector, and belongs to the field of infrared detectors. The problems that an inorganic film layer of an existing II-type superlattice infrared detector usually contains large stress and cracks are prone to occurring are solved. Comprising the following steps: depositing an inorganic mask layer on an epitaxial layer; coating photoresist on the inorganic mask layer, and developing to form patterned photoresist; performing etching on the inorganic mask layer to form a through hole structure; forming a mesa patterning photoresist above the inorganic mask layer of the through hole structure; forming a mesa pattern on the inorganic mask layer of the through hole structure; etching the epitaxial layer, and forming a patterned epitaxial layer below the inorganic mask layer of the through hole structure; depositing an inorganic passivation layer; photoetching trepanning or etching trepanning is carried out on the table top, and the inorganic mask layer and the inorganic passivation layer of the through hole structure are etched; the method is used for preparing the infrared detector.

The invention is suitable for the technical field of infrared detection, and provides a high-dynamic infrared readout circuit with asynchronous integral zero clearing, which comprises a CTIA integral circuit, a gain control module, a capacitor reset module and an N-bit counter, wherein the CTLA integrating circuit comprises a CTIA amplifier, a first capacitor, a second capacitor, a first switch tube and a second switch tube; the CTIA amplifier, the first capacitor, the second capacitor, the first switch tube and the second switch tube are connected in parallel; the first switch tube is connected in series with one side of the first capacitor; the output end of the CTIA integrating circuit is connected with the input end of the gain control module, the output end of the gain control module is connected to the input end of the capacitor reset module, and the output end of the capacitor reset module is connected with an N-bit counter. The dynamic range of the reading circuit can be effectively improved, the infrared imaging quality is enhanced, and the method can be applied to linear array and area array infrared detectors in the future.

The invention provides an infrared detector driving and adjusting circuit, relates to the technical field of infrared detector driving, and constructs an infrared detector adjusting circuit to perform voltage adjustment, temperature judgment, power-on and power-off control and image signal generation on an infrared detector. Calculating an operation performance coefficient of each device, and calculating a device accumulation performance coefficient of each device according to the operation performance coefficient of each device; according to the device accumulation performance coefficient, accumulation adjustment labeling and performance parameter adjustment are carried out, and the infrared detector adjustment circuit has remarkable advantages in the aspect of solving the problems existing in a traditional infrared detector adjustment circuit and has great significance in improving the performance stability and reliability of an infrared detector.

The invention relates to the technical field of detector testing, and discloses a multi-parameter testing system and method for thermal characteristics of a refrigeration type infrared detector, and the system comprises a cooperative measurement module, a coupling analysis module, an optimization testing module, and a data analysis platform. The method corresponds to the system. According to the application, the temperature field, stress distribution and local heat flow data of the to-be-tested detector can be synchronously acquired, and the sensor is calibrated in a low-temperature vacuum environment, so that data drift in an extreme environment is avoided, and the accuracy of actually measured data is ensured; a coupling simulation model is built based on a heat conduction equation, a reduced order model and a Maxwell model, parameters are corrected by means of measured data, and thermal load, thermal mismatch stress and refrigeration efficiency evaluation results are accurately output; the cold screen coating performance and the cold finger thermophysical property of the detector can be tested, and the special test blank of key components is filled up; and multi-source data is integrated to identify anomalies, a three-dimensional thermal field interface is output, the optimization design is assisted, and the test comprehensiveness and accuracy are integrally improved.

The utility model provides a refrigeration type infrared detector and a thermal imager, the refrigeration type infrared detector comprises a Dewar assembly and a refrigerating machine, the refrigerating machine comprises an expansion machine and a compressor, the expansion machine and the Dewar assembly are coaxially connected, the expansion machine and the compressor are communicated through a connecting pipe, and the Dewar assembly and the compressor are coaxially connected. The compressor is arranged on the side, away from the Dewar assembly, of the expansion machine, and the axis of the compressor is perpendicular to the axis of the Dewar assembly. According to the refrigeration type infrared detector and the thermal imager, the structural layout is reasonable, the heat dissipation effect of the refrigerator is enhanced, and the image degradation phenomenon caused by the temperature rise of the shutter can be effectively improved.

The present invention relates to the field of infrared detector dewar technology, and specifically provides an adsorbent adaptive packaging structure and installation method, including: a fixing ring, including: an annular portion, the annular portion having an opening, the annular portion forming two end portions at the opening; two connecting portions, the two connecting portions being respectively connected to one end of the two end portions of the annular portion; a first support leg and a second support leg, the first support leg and the second support leg being respectively connected to the other end of the two connecting portions; wherein the two end portions are arranged to overlap, or the two connecting portions are arranged to overlap, or the first support leg and the second support leg are arranged to overlap. The present invention optimizes the fixing ring into an elastic adaptive structure, making it more convenient and firm to fix the adsorbent, and optimizes one end of the support plate into an arc structure, so that it can cooperate well with the limiting groove of the dewar shell.

The invention provides an infrared detector reading circuit based on a dark current suppression structure, which comprises a dark current suppression circuit, an integrating circuit, a double sampling circuit, a source follower, a differential amplification circuit and an output buffer circuit which are electrically connected in sequence, and also comprises a sequential logic circuit, the dark current suppression circuit is used for generating a controllable current which is not influenced by temperature change, and the current is mirrored and then used for counteracting the dark current of the infrared detector; the sequential logic circuit is used for providing row selection logic, column selection logic and a sampling time sequence when a target pixel is selected from an infrared detector pixel array; the reading circuit can read the current signal of the target pixel according to the row selection logic, the column selection logic and the sampling time sequence; according to the invention, the signal-to-noise ratio of the readout system is improved by suppressing dark current, the function of reading out according to the column is realized based on the sequential logic circuit, the noise interference among the readout circuits in the array can be effectively reduced, and the focal plane array readout circuit is suitable for preparing a large-array-scale focal plane array readout circuit.

The invention relates to a radioactive source library management system, which comprises an intrusion detection unit comprising an infrared detector, an infrared camera and an emergency alarm device; a video monitoring unit; the radiation value detection unit comprises a fixed point radiation detector and a tracing robot moving radiation detector; an access control unit; the management and control platform unit is respectively connected with the intrusion detection unit, the video monitoring unit, the radiation value detection unit and the access control unit and is used for carrying out data acquisition on each unit, and the management and control platform unit is connected with the dynamic display unit and is used for providing display and alarm information for the dynamic display unit. Moving a radiation detector through a tracing robot to regularly collect the radiation dose in the radioactive source library, and judging whether the real-time number of the radioactive sources in the source library and the radiation dose are safe or not; manual collection is not needed, a radiation monitor does not need to be arranged for each radioactive source, the number of devices is reduced, meanwhile, the radiation detector does not need to be fixed to a radioactive source tank, touch is avoided, and damage is not prone to occurring.

The invention provides a thick photoresist photoetching method for smooth forming of a side wall of a deep mesa structure. The thick photoresist photoetching method comprises the following steps: coating a layer of uniform and compact positive photoresist on the surface of a chip by using spin coating equipment; pre-baking: placing the chip coated with the photoresist in a first temperature environment for baking; placing the pre-baked chip on a sample table of a contact type photoetching machine, placing a mask plate, adjusting WEC to a proper position, and then performing exposure; post-baking: placing the exposed chip in a first temperature environment for baking; developing: preparing a proper developing solution, and placing the post-baked chip in the developing solution to remove the photosensitive part so as to complete the forming of the mesa mask; and carrying out hardening process treatment on the developed chip by adopting a gradient heating mode. According to the invention, the quality of the side wall can be improved, the roughness of the side wall can be reduced, the adhesion quality of the passivation layer can be improved, and the performance of the infrared detector can be improved.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.

The present invention discloses a dual-color infrared detector, which comprises a mid-wavelength infrared detector and a long-wavelength infrared detector arranged in a stacked manner. The mid-wave channel absorption layer of the mid-wavelength infrared detector is a P-type InAs / InAsSb superlattice or a P-type InAsP / InAsSb superlattice, the long-wave channel absorption layer of the long-wavelength infrared detector is a P-type InAs / GaSb superlattice, and the mid-wave channel barrier layer of the mid-wavelength infrared detector and the long-wave channel barrier layer of the long-wavelength infrared detector are both N-type InPSb / InAs superlattices. The present invention also discloses a manufacturing method of the dual-color infrared detector. The mid-wave channel absorption layer of the dual-color infrared detector of the present invention adopts an InAs / InAsSb or InAsP / InAsSb superlattice, and the long-wave channel absorption layer adopts an InAs / GaSb superlattice, thus ensuring the best performance of the devices in each waveband.

The invention discloses a Dewar device for measuring in a single-module differential chip of an infrared detector and a manufacturing method of the Dewar device. The intermediate measurement Dewar device comprises a Dewar assembly and a chip assembly, the chip assembly comprises a single-module chip component and a differential chip component, and the Dewar assembly comprises a first cold table, a cold finger, a second cold table and a third cold table; the single-module chip component is adhered to the second cooling table, the differential chip component is adhered to the third cooling table, the first cooling table is glued with the second cooling table, the cold finger is fixed on the first cooling table through a brazing process, and the surface temperature of the first cooling table is a first preset temperature; a boss is arranged at the preset position of the cold finger, the third cold table is in glue joint with the boss, and the preset position is the distribution position corresponding to the second preset temperature in the simulated temperature gradient distribution on the cold finger. According to the embodiment of the invention, the performance test of the chip with the secondary processing capability can be realized, and the working temperatures corresponding to the single-module chip and the differential chip can be ensured.

The invention relates to a dual-band anti-reflection zinc selenide metallized light window and a preparation method thereof, the dual-band anti-reflection zinc selenide metallized light window comprises a front film system, a zinc selenide substrate, a back film system and edge metallized films, the zinc selenide substrate is located between the front film system and the back film system, and the edge metallized films are located at two ends of the zinc selenide substrate; the front film system and the back film system are formed by alternately overlapping zinc sulfide layers and ytterbium fluoride film layers; the edge metallized film is formed by overlapping a chromium film layer, a copper film layer, a nickel film layer and a gold film layer. According to the invention, the two sides of the zinc selenide substrate are respectively provided with an anti-reflection film system structure, so that the light energy of two wave bands of 3500-5000nm and 8000-12000nm is improved; the zinc sulfide and ytterbium fluoride film layer is adopted, so that the stress is lower, and the dual-band anti-reflection optimization effect is better; by improving the edge metallized film stacking structure, the problem that the soft optical material and the metallized film are not firmly combined is solved, and a new scheme is provided for infrared detector welding.

The invention relates to the technical field of infrared detection, and discloses an infrared detector dead pixel detection method, which comprises the following steps: acquiring a current scene image during the working period of an infrared detector and a plurality of frames of isothermal uniform surface background images acquired by the infrared detector at different working temperatures to form a background image sequence; performing singular point detection on each frame of image in the current scene image and the background image sequence by adopting an improved wavelet transform algorithm, screening out effective singular points, and calculating a singularity value of each effective singular point; based on the singular point detection result, the singularity value difference and historical background image data, static dead pixels, dynamic dead pixels and noisy points are distinguished through a multi-layer judgment rule, and a dead pixel detection result is obtained; and periodically evaluating the accuracy of the defective pixel detection result, and dynamically calibrating the detection parameters according to the evaluation result. Through collaborative analysis of the current working image and the multi-temperature background image sequence, dead pixels can be accurately detected in real time in the normal working process of the detector.