410 results about "Ir detector" patented technology

An image sensor system (200) sensitive to electromagnetic irradiation and comprising: a first pixel area (210) comprising an array of synchronous first image sensor pixels (211); and an infrared pixel arca (240) comprising infrared image sensor pixels (241, 242) sensitive to infrared irradiation; and a change detector area (230) comprising multiple asynchronous change detectors (231, 232), and a synchronous intensity read-out circuitry (260). A first electromagnetic receptor (215) of a respective first image sensor pixel (211) is electrically coupled to the synchronous intensity read-out circuitry (260). An infrared detector (245) of a respective infrared image sensor pixel (241, 242) is electrically coupled to a respective first asynchronous change detector (231) out of the multiple asynchronous change detectors (231, 232). The change detector area (230) is a distinct part of the image sensor system (200) which is separate from the pixel areas (210, 240).

The invention provides a short-wave infrared detector digital alloy material and a preparation process thereof. The preparation process comprises the following steps: growing a GaSb buffer layer on the surface of an n-type GaSb substrate; starting a first In furnace, and growing an InAs layer on the surface of the GaSb buffer layer in cooperation with an As beam; starting a second In furnace, and growing a quaternary solid solution layer matched with a GaSb buffer layer lattice on the surface of the InAs layer in cooperation with the Ga furnace and the AsSb beam; and alternately growing an InAs layer and a quaternary solid solution layer on the surface of the quaternary solid solution layer to generate a superlattice structure until the total thickness of the superlattice structure reaches a set target thickness, thereby obtaining the digital alloy material. According to the digital alloy material for the short-wave infrared detector and the preparation technology of the digital alloy material, the short-wave infrared detector can be expanded to the wave band ranging from 2.4 micrometers to 2.8 micrometers at the 50% cut-off wavelength.

The invention relates to the technical field of detector testing, and discloses a multi-parameter testing system and method for thermal characteristics of a refrigeration type infrared detector, and the system comprises a cooperative measurement module, a coupling analysis module, an optimization testing module, and a data analysis platform. The method corresponds to the system. According to the application, the temperature field, stress distribution and local heat flow data of the to-be-tested detector can be synchronously acquired, and the sensor is calibrated in a low-temperature vacuum environment, so that data drift in an extreme environment is avoided, and the accuracy of actually measured data is ensured; a coupling simulation model is built based on a heat conduction equation, a reduced order model and a Maxwell model, parameters are corrected by means of measured data, and thermal load, thermal mismatch stress and refrigeration efficiency evaluation results are accurately output; the cold screen coating performance and the cold finger thermophysical property of the detector can be tested, and the special test blank of key components is filled up; and multi-source data is integrated to identify anomalies, a three-dimensional thermal field interface is output, the optimization design is assisted, and the test comprehensiveness and accuracy are integrally improved.

The invention relates to the technical field of infrared detection, and discloses an infrared detector dead pixel detection method, which comprises the following steps: acquiring a current scene image during the working period of an infrared detector and a plurality of frames of isothermal uniform surface background images acquired by the infrared detector at different working temperatures to form a background image sequence; performing singular point detection on each frame of image in the current scene image and the background image sequence by adopting an improved wavelet transform algorithm, screening out effective singular points, and calculating a singularity value of each effective singular point; based on the singular point detection result, the singularity value difference and historical background image data, static dead pixels, dynamic dead pixels and noisy points are distinguished through a multi-layer judgment rule, and a dead pixel detection result is obtained; and periodically evaluating the accuracy of the defective pixel detection result, and dynamically calibrating the detection parameters according to the evaluation result. Through collaborative analysis of the current working image and the multi-temperature background image sequence, dead pixels can be accurately detected in real time in the normal working process of the detector.

The invention relates to an aliasing image target recognition and positioning algorithm based on sub-view-field shape modulation coding, relates to the technical field of aliasing image target recognition and view field judgment and positioning, and solves the technical problem that the scale and view field of a detector cannot be considered when large-view-field and high-resolution imaging is realized under the condition of a limited detector in the prior art. The algorithm comprises the following steps: identifying a foreground target; tracking a target rotation state; and judging the relevance between the target motion trail and the light spot shape change trend and inversely solving the actual spatial position. According to the aliasing image target recognition and positioning algorithm based on sub-view-field shape modulation coding, space-based early warning and large-width detection are achieved through the advantages of low power consumption and low cost of a small target surface detector, and the bottleneck that large-view-field imaging of an infrared optical system is limited by the manufacturing process of an infrared detector is broken through. According to the invention, through continuous frame light spot morphological feature extraction and trajectory-shape double-domain correlation modeling, unique determination and high-precision positioning of a view field of an object space where a target is located are realized.

The invention relates to the technical field of semiconductor photoelectric device test and diagnosis, in particular to an infrared focal plane process diagnosis method based on machine learning, which comprises the following steps of: firstly, collecting photocurrent spectrum data of a plurality of pixel units on a focal plane array, and extracting a spectrum feature vector after preprocessing; secondly, a machine learning model is trained to obtain a performance prediction model, and key spectral features are obtained through feature importance evaluation; and finally, in combination with semiconductor physical simulation, establishing quantitative correlation between the key spectral characteristics and manufacturing process parameters, and completing diagnosis of production process links. The invention also comprises an optimization method. According to the method, spectral deep form information neglected by a conventional method is deeply mined and quantified, high-precision prediction of the response rate of each pixel of the whole focal plane array is realized by constructing characteristics closely related to a device microscopic physical mechanism, and correlation between spectral characteristics and process structure parameters is established, so that the accuracy of the device is improved. And the performance optimization and the process rapid iteration of the infrared detector chip are guided.

The invention discloses a miniature integrated infrared gas sensor chip, which belongs to the technical field of sensors, and comprises a first wafer and a second wafer, and the first wafer and the second wafer are connected in a combination manner and form an optical gas chamber; a vent hole is formed above the first wafer, and a reflective film layer is plated on the inner wall of the optical gas chamber and is arranged to only allow infrared light emitted by the infrared light source to pass through; a periodic micro-nano structure is arranged in the optical gas chamber; the surface of the second wafer is covered with an insulating film layer, and an infrared light source and an infrared detector are arranged above the insulating film layer. An optical gas chamber is formed through double-wafer bonding, a periodic micro-nano structure is integrated to enhance interaction between infrared light and gas, environmental interference is suppressed in combination with a double-channel differential detector, and meanwhile stability and selectivity are improved through multi-layer structures such as a reflective film layer, a protective film layer and a composite insulating film layer. And finally, a miniaturized and high-sensitivity gas detection function is realized.

The invention provides an infrared detector deep mesa etching process based on three layers of masks and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer, and curing and forming; depositing a hard mask serving as an etching barrier layer; depositing an inorganic oxide; spin-coating photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photoetching process; taking the mesa pattern as a mask, and transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by adopting plasma until the surface of the superlattice epitaxial layer is exposed; the three layers of masks are used as blocking, deep etching is carried out through inductively coupled plasma, and the etching depth is 5.6-6 microns; a post-processing step; according to the process provided by the invention, high-quality and high-aspect-ratio mesa etching can be realized on the premise of not introducing extra pollution and remarkably increasing the cost, and the process is suitable for preparing a deep-mesa and high-aspect-ratio device.

The utility model discloses a pixel unit circuit, a readout circuit and an infrared imaging sensor, and the pixel unit circuit comprises a front-end reading module which is used for converting a light current inputted by an infrared detector array into a light voltage and improving the output swing of the light voltage; the amplification and comparison module is connected with the front-end reading module, and is used for sampling the photovoltage, amplifying a change value of the photovoltage to obtain an amplified photovoltage and comparing the amplified photovoltage with a threshold voltage; and the signal resetting module is connected with the amplification and comparison module and is used for outputting a resetting signal to the amplification and comparison module to trigger the amplification and comparison module to sample the light voltage and outputting an event signal according to a comparison result of the amplified light voltage and the threshold voltage. According to the utility model, the front-end reading module is used for increasing the swing of the output photovoltage, so that the sensitivity of the photovoltage signal to noise and interference in the transmission process is reduced, the anti-interference capability of the signal is enhanced, and the signal-to-noise ratio is improved.

The invention discloses a focusing method and system of an infrared camera, relates to the field of motor control, and solves the problems of high labor cost, high possibility of wrong shooting, low efficiency and high possibility of focusing failure in the existing infrared focusing method technology. The focusing method of the infrared camera comprises the following steps: when a target shooting position is received, moving an infrared lens to a forward maximum defocus position; taking the coarse focal depth distance as a step length, carrying out peak searching, obtaining a maximum clear value and a secondary clear value, and obtaining a corresponding encoder position; moving the infrared lens from the maximum clear value to the secondary clear value by taking a fine focal depth distance as a step length, and searching the maximum clear value again; and the infrared lens moves to the encoder position corresponding to the maximum clear value, and focusing is completed. A focusing system of an infrared camera comprises an infrared detector, a system control module, a motor driver and an encoder. The method is suitable for the field of automatic focusing of the infrared camera.

The invention discloses a polarization-dependent bipolar infrared detector based on a corner heterojunction, a preparation method and a photocurrent response polarity regulation and control method. The polarization-dependent bipolar infrared detector comprises a substrate, a corner Van der Waals heterojunction and a transferable metal electrode, wherein the corner Van der Waals heterojunction and the transferable metal electrode are sequentially stacked on the substrate from bottom to top; the corner Van der Waals heterojunction is obtained by sequentially stacking p-type semiconductors, n-type semiconductors and p-type semiconductors to form an npn junction and forming a corner by changing the crystal orientation included angle of the two p-type semiconductors; a built-in electric field is used for driving photon-generated carrier separation, so that the infrared detector works in a photovoltaic mode.

The invention relates to the technical field of space satellite thermal control, in particular to a space satellite thermal control system based on self-adaptive thermal transport, which comprises a thermochromic intelligent thermal control coating coated on the whole outer surface of a space satellite, the variable-direction active heat compensation pump loop is arranged in the space satellite; the variable-direction active heat compensation pump loop is arranged between the satellite main illuminated face and the satellite main nightside and used for conducting heat transfer between the satellite main illuminated face and the satellite main nightside. The structure is simple, a basic frame of a heat control system is built, through cooperation of coating covering and a heat pump loop, regulation and transfer of satellite surface heat are preliminarily achieved, the temperature difference of the satellite outer surface is effectively reduced, the temperature uniformity of the outer surface is improved, effective guarantee is provided for a space satellite to avoid detection of an infrared detector, and the application range is wide. And the space satellite is safer and more hidden.

The invention provides a liquid heat conductivity coefficient measurement method without absolute thickness information, and belongs to the field of liquid heat conductivity coefficient measurement. The problem that the universality and the accuracy are seriously restricted due to the fact that an unsteady state method must depend on the absolute thickness of a sample to be detected is solved. The method comprises the following steps: placing a to-be-detected liquid sample in a crucible, and adjusting an optical system to enable an infrared detector to be aligned with a to-be-detected area; changing the thickness of the liquid sample through an electric displacement table to obtain a plurality of thickness values; corresponding to each thickness, using a pulse laser to heat the sample, detecting a signal of the overheat residual temperature of the upper surface of the crucible along with time change, and obtaining a normalized temperature rise curve; repeatedly measuring under a plurality of different liquid thicknesses, and recording the half-peak time of the normalized heating curve corresponding to each thickness value; and calculating the thermal diffusion coefficient of the to-be-measured liquid according to the proportional relation between the half-peak time and the thickness square of the liquid, thereby determining the heat conductivity coefficient of the liquid. The method is used in practical industrial environments such as thermoelectricity and lithium ion batteries.

The invention relates to the technical field of micro-nano processing of semiconductor devices, in particular to an InAs / GaSb class-II superlattice mesa wet etching solution and a using method thereof, the etching solution is an aqueous solution comprising citric acid, phosphoric acid and hydrogen peroxide, the citric acid is citric acid monohydrate, the mass concentration of the phosphoric acid is 85%, and the mass concentration of the hydrogen peroxide is 30%. By optimizing the proportion of the components of the corrosive liquid and introducing an adjustable corrosion time sequence and a post-treatment technique, high repeatability and high uniformity of the corrosion process can be realized on the premise of keeping the intrinsic electrical properties of the material, the morphology quality of the mesa structure can be remarkably improved, and the smooth and low-damage mesa side wall and surface can be obtained. The method lays a reliable process foundation for preparing a high-performance InAs / GaSb class-II super-crystal-based infrared detector, is particularly beneficial to suppressing electric leakage of the side wall of a device, reduces dark current, and finally improves the quantum efficiency and imaging performance of the device.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The invention provides an infrared detector readout circuit repairing method, and relates to the technical field of silicon readout circuit repairing, and the method comprises the steps: screening chips with abnormal electrical properties from processed circuit chips, and determining the relative coordinates of a problem line and a nearest bonding pad according to the fault type; under an FIB-SEM double-beam scanning electron microscope, the sample table is moved to reach the relative coordinates, and a reference pattern with the depth shallower than the thickness of the metal layer is formed through etching with the relative coordinates as the center; measuring a problem line operation point coordinate by taking the reference graphic feature point as a zero point; performing etching exposure on the coordinate area of the operation point by using an FIB-SEM double-beam scanning electron microscope; and carrying out line repairing operation. The problems that the reference point distance is long and the positioning deviation is large are effectively solved, and accurate positioning of a small-feature-size circuit needing to be operated in the infrared detector reading circuit repairing process is achieved.

The invention relates to an infrared pot cover shape non-uniformity correction system based on scene gradient processing and a correction algorithm thereof. The system comprises an image input stream module, an initialization module, a down-sampling module, a median filtering module, a horizontal and vertical gradient processing module, an image reconstruction module, a bilinear interpolation module, an up-sampling module, an algorithm processing updating matrix module and an image output stream module which are connected in sequence. The median filtering module, the horizontal and vertical gradient processing module and the image reconstruction module are respectively connected with the RAM through a cache; the bilinear interpolation module and the up-sampling module are respectively connected with the FIFO through a cache, and the algorithm processing updating matrix module is connected with the DDR through a cache. The method has the advantages that the pot cover effect of an infrared image can be directly improved, system-level optimization of the infrared imaging quality is achieved, the method is adaptive to various types of infrared detectors after an input data protocol is configured, codes do not need to be changed one by one, and the method is low in hardware scheme resource consumption, high in convergence speed and high in transportability and universality.

The invention discloses a high-quantum-efficiency medium wave-very long wave double-color infrared detector and a preparation method thereof, and relates to the technical field of semiconductors. A substrate layer, a buffer layer, a medium-wave highly-doped layer, a medium-wave absorption layer, a very-long-wave absorption layer, a very-long-wave barrier layer and a very-long-wave highly-doped layer are sequentially stacked from bottom to top through a molecular beam epitaxial growth process; and the multi-layer structure is further partially etched to form a mesa structure and an exposed medium-wave highly-doped layer, an upper electrode is arranged on one side, close to the exposed medium-wave highly-doped layer, of the very-long-wave highly-doped layer, and a lower electrode is arranged on the exposed medium-wave highly-doped layer, so that the medium-wave-very-long-wave two-color infrared detector with high quantum efficiency is manufactured. The dual-band quantum efficiency and the anti-interference capability of the infrared detector are obviously improved, the preparation process parameters are accurate and controllable, and the infrared detector is suitable for high-precision infrared detection scenes such as security and protection, remote sensing and medical treatment.

This application provides a calibration method, an infrared imaging device, and a storage medium for an infrared detector. The method includes: acquiring the original response values ​​of each pixel of the infrared detector; determining the current response value interval of each pixel based on the original response values ​​and the boundaries of multiple pre-calibrated response value intervals of the infrared detector, wherein multiple response value intervals are pre-calibrated based on the characteristics of the response curves of each integration channel of the infrared detector; acquiring the correction coefficient corresponding to the current response value interval of each pixel based on the pre-calibrated correction coefficients corresponding to each pixel in different response value intervals; correcting the original response values ​​of each pixel based on the correction coefficients; and outputting the corrected response values ​​of each pixel. This method effectively improves the non-uniformity correction effect of the image, especially in scenes with large temperature differences, and can significantly suppress horizontal stripe residue caused by nonlinear response.

The invention discloses a monitoring method for an infrared detector chip, and relates to the technology of infrared detectors and semiconductors, and the method comprises the steps: etching a monitoring structure in a region outside a photosensitive chip region in the process of etching and preparing a mesa structure of a photosensitive chip of the infrared detector chip; measuring the etching depths of the mesa structure of the etched photosensitive chip area and each deep groove structure at different line widths, so as to form a data group based on the measured etching depths; a back thinning process is carried out on the mixed chip; and in the back thinning process, comparing the thinned and exposed deep groove structure with the formed data set so as to judge whether the back thinning process is abnormal or not. Through a focal plane preparation process link of specific marking and monitoring chip preparation and a process link of mixing chip back thinning residual thickness and process quality, the process monitoring difficulty is reduced, the monitoring operability is improved, and the problem of tabletop preparation depth monitoring is solved.

The utility model discloses an infrared detector combined with video monitoring, which comprises an infrared emitting upright post and an infrared receiving upright post, the infrared emitting upright post and the infrared receiving upright post are respectively provided with a shell, a mounting plate, a camera and a plurality of infrared modules, and the mounting plate, the camera and the infrared modules are arranged in the shell. And the camera and the infrared module are fixedly mounted on the mounting plate. According to the infrared detector combined with video monitoring disclosed by the utility model, linkage is carried out through the infrared emission stand column and the infrared receiving stand column, the camera and the infrared module are integrated on the mounting plate, and the infrared module and the camera can send alarm information to backgrounds such as a security room after triggering alarm at the same time; the infrared module is prevented from giving an alarm due to weather or giving an alarm when birds fly by mistake, mistaken touch alarm conditions are reduced, clear and visual video pictures can be provided after the alarm is triggered, and workers can conveniently check invasion conditions.

The invention provides a new energy vehicle charging position fire blocking device which comprises a control box, an automatic spraying mechanism and a plurality of blocking mechanisms. The blocking mechanism comprises a partition box, a power motor, a wire wheel, a guide wheel, a pull rope, a sliding rail and a plurality of sliding blocks, the power motor and the wire wheel are located in the partition box, the sliding rail extends into the partition box, the wire wheel is connected with the power motor, the guide wheel is rotationally arranged on the sliding rail, the pull rope is connected with the wire wheel, the guide wheel and the sliding blocks, and the sliding blocks are arranged on the sliding rail and are in threaded connection with a supporting rod; fireproof cloth is arranged on every two adjacent supporting rods; the blocking mechanism is arranged on a longitudinal parking space line of the charging position, an ultraviolet flame detector is arranged on the partition box, two infrared detectors are arranged at each of the two ends of the charging position, the automatic spraying mechanism is arranged on the charging position, and the control box is electrically connected with the ultraviolet flame detector, the infrared detectors, the automatic spraying mechanism and the power motor. According to the method, the new energy vehicle on fire can be treated in time, and the caused economic loss is reduced.

The application provides an infrared detector deep mesa etching process based on a three-layer mask and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer and curing the stress buffer layer; depositing a hard mask as an etching barrier layer; depositing an inorganic oxide; spin-coating a photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photolithography process; taking the mesa pattern as a mask, transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by using plasma until the surface of the superlattice epitaxial layer is exposed; taking the three-layer mask as a barrier, performing deep etching by using inductively coupled plasma, and the etching depth is 5.6-6 microns; and performing a post-processing step. The process of the application can realize high-quality and high-aspect-ratio mesa etching without introducing additional pollution and significant cost increase, and is suitable for the preparation of deep mesa and high-aspect-ratio devices.

This invention discloses a mercury cadmium telluride infrared detector and its fabrication method. The method innovatively employs negative photoresist and a lift-off process to grow a metal mask and define contact hole patterns. This metal mask layer serves as both an ion implantation mask and a contact hole etching mask, solving the problems of implantation region positioning deviation and size mismatch in traditional processes. It enables ultra-small cell spacing, improves the detector's photoelectric performance and array uniformity, and is suitable for the large-scale fabrication of high-density infrared detector planar arrays.

The application belongs to InGaAs infrared focal plane detector, and provides a preparation method of a new type of InGaAs short-wave infrared detector. After growing P electrode, N electrode, P type metal and N type metal to form ohmic contact, growing connecting layer metal, thinning and polishing InP substrate to form a flat mirror surface, corresponding photoetching on a readout circuit wafer, growing lower electrode metal and indium column, and then carrying out metal stripping; InP epitaxial wafer PDA and readout circuit are uniformly glued, protected, and diced to form independent single; PDA and readout circuit are inversely interconnected to form an infrared detector, and secondary polishing treatment and growth of anti-reflection coating are carried out. The indium column is grown at the end of the readout circuit, and one-step photoetching can be completed. The PDA chip end can reduce the growth of the lower electrode, the growth of the indium column, and the growth of the corresponding passivation layer and the opening of the passivation layer. The process steps are reduced, the probability of defects is reduced, the production cost is reduced, and the final yield of the product is further improved.

The invention discloses a phase change material spectrum modulator based on Bayesian optimization and a long-wave infrared spectrum imaging system. According to the invention, a GSST and Sb2S3 double-layer circular nano-column structure is adopted as a main structural unit of the phase change material metasurface spectrum modulator, 25 different metasurface phase states are realized through light regulation and control of crystal fractions of the two materials, a plurality of spectrum modulation states are dynamically generated, and structural parameters of the phase change material metasurface spectrum modulator are automatically optimized through a Bayesian optimization algorithm. The imaging system comprises a spectrum modulation part and a calculation reconstruction part. The phase-change material metasurface spectrum modulator is directly integrated with an infrared detector pixel, so that single snapshot type information acquisition can be carried out while dynamic spectrum coding is realized; and the Transform encoder is used for carrying out end-to-end reconstruction on the modulation signal and outputting a high-precision space-spectrum three-dimensional data cube. The imaging system has the characteristics of micron size, multiple modulation states, high sampling efficiency, excellent reconstruction quality, high spectral resolution and the like.

The invention provides a mercury-cadmium-telluride material, a surface passivation heat treatment method thereof and an infrared detector, the surface passivation heat treatment method of the mercury-cadmium-telluride material comprises the following steps: S1, pretreating the surface of a mercury-cadmium-telluride substrate; s2, depositing and growing a high-component HgCdTe film layer on the surface of the tellurium-cadmium-mercury substrate; s3, depositing and growing a CdTe passive film layer on the surface of the high-component HgCdTe film layer; s4, depositing and growing a ZnS passive film layer on the surface of the CdTe passive film layer; and S5, carrying out passive heat treatment on the tellurium-cadmium-mercury substrate treated in the step S4 under the protection of an inert atmosphere. The three composite passivation film layers are adopted, and the high-component HgCdTe film layer and the HgCdTe substrate material are basically consistent in component, crystal structure and lattice constant, so that the problems that the CdTe film layer preparation process is high in requirement, CdTe / HgCdTe generates stress and dislocation and the like when the traditional CdTe passivation film layer is adopted as the first passivation material layer are solved; the process requirement of preparation of the CdTe passive film layer is reduced, the complexity of a heat treatment process is reduced, and the process window of HgCdTe device processing is widened.

The utility model relates to the field of infrared detection, and discloses an infrared detector module and infrared imaging equipment, the infrared detector module comprises a circuit board, a shell, an infrared detector and a light-transmitting piece, the shell is provided with a window and a ventilation hole; the shell is fixedly connected with the surface of the circuit board, the light-transmitting piece is located in the window, and the shell, the light-transmitting piece and the circuit board form a cavity; the light-transmitting part is located on an incident light path of the infrared detector; the infrared detector is positioned in the cavity and is electrically connected with the circuit board; the ventilation hole is communicated with the cavity and used for releasing heat in the cavity. The shell and the light-transmitting piece play a role in protecting the infrared detector, and the influence of particles on imaging of the infrared detector can be reduced. The heat in the cavity can be discharged to the outside of the cavity through the ventilation hole, so that the heat in the cavity is prevented from causing expansion of the shell and affecting the combination degree between the shell and the circuit board, meanwhile, the influence of the heat on imaging of the infrared detector can be avoided, and the yield of the infrared detector module is improved.

The invention discloses a high-absorptivity absorption layer of a pyroelectric chip, a preparation method and application thereof. The preparation method comprises the following steps: (1) mixing multi-walled carbon nanotubes, a binder, deionized water and absolute ethyl alcohol, and performing ultrasonic treatment to form an absorption layer dispersion liquid; (2) dispensing an absorption layer dispersion liquid on the surface of the pyroelectric chip, and then uniformly depositing and preparing an absorption layer film on the surface of the pyroelectric chip by utilizing mass transfer motion of a Marangei effect; and (3) drying and curing the absorption layer film by using a vacuum drying oven. Compared with the full-wave band absorption rate (about 50-60%) of a traditional Cr: Ni metal film absorption layer, the absorption rate of the absorption layer reaches up to 90% or above, and the adhesive force of the absorption layer on the target surface is greatly improved by optimizing the binder on the premise that the absorption rate of the absorption layer is not affected. The absorption layer has the advantages of being uniform, high in absorption rate, high in mechanical robustness, easy to prepare and the like, the performance of the pyroelectric infrared detector based on the absorption layer is improved by 40%, and the application prospect is wide.

The utility model relates to the technical field of detector auxiliary equipment, and discloses a mounting base structure of an infrared detector, which comprises a carrying rod, a carrying plate movably mounted on the carrying rod, a first connecting ring and a top rod movably mounted in the carrying rod, a first hanging rod fixedly mounted at the lower end of the first connecting ring, and a second hanging rod movably mounted on the outer side of the first hanging rod. Fixing plates are fixedly mounted at the lower ends of the second suspenders. The carrying rod and the carrying plate are rotationally connected, the first connecting ring is further rotationally installed in the carrying rod, the first hanging rod is fixedly installed at the lower end of the first connecting ring, and the second hanging rod capable of being telescopically adjusted is installed on the outer side of the first hanging rod in a penetrating mode, so that installation and multi-angle adjustment of the infrared detector can be achieved in cooperation with the fixing plate; and the rotary connection of the carrying rod, the carrying plate and the first connecting ring can be synchronously fixed, so that the multi-structure connection and fixation efficiency of the whole device is improved, and the angle adjustment precision of the infrared detector is improved.