IR thermopile detector

A detector and thermopile technology, applied in the field of infrared detectors, can solve the problems of small optical path, lower operating temperature, high power consumption, etc.

Active Publication Date: 2015-03-11
AMS SENSORS UK LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will result in high power dissipation and lower operating maximum temperature
Also, the optical path for IR emission propagation is relatively small, so the sensor has lower sensitivity

Method used

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Examples

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Embodiment Construction

[0071] figure 1 A schematic cross-sectional view of an IR detector fabricated in an SOI process is shown. Membrane layers 2 , 3 , 4 supported by a silicon substrate 1 are provided here. The film layer includes a buried oxide layer 2 , a dielectric layer 3 and a passivation layer 4 . A thermopile consisting of several thermocouples connected together in series is formed within the membrane layer. figure 1 Also shown are thermopiles using N+ monocrystalline silicon 6 and P+ monocrystalline silicon 7 materials. The terminals of the thermopile generating electrical signals are identified as 6a and 7a. These terminals may be connected to pads (not shown) or other readout or signal processing circuitry (not shown). CMOS metal 8 is used to electrically connect the P+ and N+ layers in hot and cold thermal connections. Metal layers (made in a CMOS process) are used to connect them electrically to avoid the formation of semiconductor P / N junctions. Materials with high IR absorptio...

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Abstract

An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and / or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.

Description

technical field [0001] The invention relates to an infrared (IR) detector based on a thermopile fabricated on a microchip with a film for thermal insulation. A thermopile is made up of several thermocouples placed in series. The invention also relates to integrating an IR detector with an IR source to make a non-dispersive infrared (NDIR) sensor. Background technique [0002] It is known to fabricate thermal IR detectors on silicon substrates consisting of thin film layers (consisting of electrically insulating layers) formed by etching parts of the substrate. Incident IR radiation increases the temperature of the film - which can be measured by any of thermopiles, resistors and diodes. [0003] For example, "Optimized CMOS Infrared Detector Microsystems" by Schneeberger et al., Proc IEEE Tencon 1995, reports the fabrication of thermopile-based CMOS IR detectors. The thermopile consists of several thermocouples connected in series. KOH is used to etch the film and improv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/12H01L35/34
CPCG01J5/12G01J5/023H10N10/01G01J2005/123
Inventor F·乌德雷亚J·加德纳S·Z·阿里M·乔杜里I·波埃纳鲁
Owner AMS SENSORS UK LTD
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