934 results about "Monocrystalline silicon" patented technology

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

A semiconductor device including: a first level including: a first silicon layer including a first single crystal silicon; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a second level including a second single crystal silicon and a plurality of transistors, the second level is disposed over the second metal layer; a third metal layer disposed over the second level; a fourth metal layer disposed over the third metal layer; a via disposed through the second level, where the via has a diameter of less than 450 nm, where the second level thickness is less than four microns; and at least one temperature sensor.

The invention provides a crystal pulling method for improving the BMD defect density in monocrystalline silicon and a monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon crystal pulling, and particularly relates to the following steps: stabilizing the oxygen content in a crystal in a relatively high interval by cooperatively regulating and controlling the argon flow, the furnace pressure, the crucible rotating speed, the crystal rod rotating speed and the pulling speed, providing a sufficient oxygen source for generation of BMD defects, and improving the BMD defect density in the monocrystalline silicon on the basis of stabilizing the oxygen content in the crystal in a relatively high interval. In the equal-diameter process, temperature compensation is carried out on a crystal bar through a preset temperature compensation device, diffusion and precipitation of oxygen atoms are effectively promoted to form BMD crystal nucleuses, the BMD body defect density and the axial distribution uniformity are remarkably improved, the specification lower limit of the BMD density is promoted to be improved to 1.0 E + 11 ea / cm < 3 > or above, the internal gettering capacity of a silicon wafer is finally enhanced, and the service life of the silicon wafer is prolonged. And a reliable guarantee is provided for improving the performance and yield of the device.

This invention discloses a texturing additive for preparing monocrystalline silicon with a bamboo shoot-like textured surface and its application process. The mass percentage of each component in the texturing additive is as follows: polyvinyl alcohol 0.01-0.2%, polymeric dispersant 0.03-0.25%, texture modifier 0.005-0.025%, reaction promoter 0.4-1.5%, and the balance being water. Using the texturing additive of this invention, monocrystalline silicon wafers can be texturized once or twice. When applied to the monocrystalline silicon texturing process, the additive of this invention can obtain a "bamboo shoot-like" textured surface structure. This textured surface structure has a stronger absorption effect on sunlight than the traditional pyramid textured surface structure, resulting in a significant improvement in the current performance of the solar cells. Furthermore, the additive of this invention is applicable not only to primary and secondary texturing processes, but also to secondary texturing processes where the same type of additive is used in both texturing tanks, greatly improving production line compatibility and reducing production line supply costs.

The invention provides a semiconductor device with a trench gate and a forming method thereof, and the method comprises the steps: firstly executing a first exposure process and a first etching process to form a bottom gate oxide of a trench, then forming a monocrystalline silicon layer, executing a second exposure process and a second etching process to form a trench, exposing the top surface of the bottom gate oxide through the trench, and then forming the trench gate, the trench gate is located in the trench and located on the bottom gate oxide, the first exposure process and the second exposure process adopt the same mask, and the polarity of the second photoresist layer is opposite to that of the first photoresist layer. The unexpected effects of the invention are that the thickness of the bottom gate oxide of the groove can be more conveniently controlled, the bottom gate oxide of the groove is firstly formed, and then the monocrystalline silicon layer and the groove are formed, so that the problem that the bottom gate oxide is easy to seal in advance due to a high-density plasma process after the groove is formed is avoided, the process difficulty can be simplified, and the production efficiency is improved. And meanwhile, the possibility of thick bottom gate oxide is provided for the MOS device with a small critical size, and the density of the device can be improved.

The invention provides a photovoltaic monocrystalline silicon wafer and a solar cell comprising the same, and belongs to the technical field of solar cells, in particular to the technical field of photovoltaic silicon wafers. The resistivity of the silicon wafer is 50 to 500 omega.cm; the oxygen content of the silicon wafer is less than or equal to 8 * 10 < 17 > atom / cm < 3 >, preferably 1.5 * 10 < 17 > to 6 * 10 < 17 > atom / cm < 3 >. A battery prepared from the silicon wafer provided by the invention is high in photoelectric conversion efficiency concentration ratio.

The invention provides a single crystal silicon rod drawing method and system based on dynamic parameter linkage, and the method comprises the steps: implementing a temperature gradient dynamic control strategy according to different stages of single crystal silicon rod drawing; a linkage strategy of a rotation rate and a pulling speed is adopted, and the rotation rate of the seed crystal is kept at a high rotation speed in the initial stage of pulling to stabilize a melt interface; meanwhile, a stepped dynamic adjustment strategy is adopted for the lifting speed, low-speed lifting is kept in the initial stage so as to ensure the melt stability, and then the lifting speed is linearly increased according to the increase of the diameter of the silicon rod; and the crucible lifting speed is adjusted in real time based on a self-adaptive adjustment strategy, so that the crucible lifting speed and the increase of the diameter of the silicon rod are kept synchronous, the stability of the melt liquid level height is maintained, and the fluctuation of the dopant concentration is prevented. By dynamically adjusting the temperature gradient, the rotation rate, the pulling speed and the crucible lifting speed, thermal stress is reduced, melt convection is stabilized, the radial uniformity of the silicon wafer is improved, and the requirements of a BC battery for low-defect and high-uniformity doping are met.

The embodiment of the invention provides a crystal pulling heating power regulation and control method, device and equipment and a storage medium, and belongs to the technical field of monocrystalline silicon material production. The method comprises the steps that real-time crystal pulling parameters are obtained, wherein the real-time crystal pulling parameters comprise the real-time residual material weight and the real-time crystal pulling speed; based on the real-time residual material weight, the real-time crystal pulling speed and a pre-constructed mapping table, the current heating compensation power is determined, the current crystal pulling heating power is regulated and controlled through the heating compensation power, and the mapping table comprises the mapping relation of the residual material weight, the crystal pulling speed and the compensation power. According to the invention, based on the real-time crystal pulling parameters, the proper current heating compensation power can be rapidly determined by using the pre-constructed mapping table, so that the crystal pulling heating power is regulated and controlled to maintain the solid-liquid interface temperature of the silicon material in the crucible, the stability of the crystal pulling process is improved, and the occurrence of abnormal crystal pulling is reduced.

The invention provides a negative active material, a negative active material coating, a negative pole piece, a cylindrical lithium ion battery and an electric device, and relates to the technical field of lithium ion batteries. The negative active material comprises graphite, silicon carbon, pre-lithium silica and monocrystalline silicon; wherein the total mass of the silicon carbon material and the pre-lithium silica accounts for less than 40% of the total mass of the negative electrode active material. According to the invention, the problem that the battery capacity and the cycle life are limited because the combination and the structural design of the existing lithium ion battery negative electrode material are not optimized enough is effectively solved.

The utility model provides a monocrystalline silicon water-guided laser processing system based on double support. The monocrystalline silicon water-guided laser processing system comprises a laser; a spectroscope; a focus lens; a water guide processing head; the monocrystalline silicon wafer is subjected to water-guided laser cutting processing through water jet; transparent glass which is attached to the monocrystalline silicon wafer from the bottom direction, is integrated with the monocrystalline silicon wafer, and supports the monocrystalline silicon wafer; the clamp comprises an upper clamp and a lower clamp which are respectively used for clamping from the upper surface of the monocrystalline silicon wafer and the lower surface of the transparent glass; and a buffer layer between the upper jig and the upper surface of the monocrystalline silicon wafer. According to the utility model, the high-transmittance glass is used as a bottom support material, so that effective support is provided, laser in the processing process is dissipated, the monocrystalline silicon is prevented from being damaged, edge breakage and cracks caused by water flow impact are reduced, and the quality of monocrystalline silicon water-guided laser processing is improved. Meanwhile, the elastic gasket is additionally arranged on the contact surface of the clamp and the monocrystalline silicon wafer for buffering and protection, so that the surface quality of a processed finished product is improved.

The utility model discloses a monocrystalline silicon leftover material multi-face scrubbing device which comprises a scrubbing box, a conveying roller, a pressing roller, a conveying driving piece, a spraying pipe, a spraying head and a scrubbing component, the conveying roller is horizontally and rotatably arranged in the scrubbing box, and the pressing roller is rotatably arranged in the scrubbing box and matched with the conveying roller. The transmission driving part is fixedly arranged in the scrubbing box and used for driving the transmission roller to rotate, the spraying pipe is fixedly arranged in the scrubbing box, a plurality of spraying heads are arranged on the spraying pipe, and the scrubbing part is arranged in the scrubbing box and matched with the edge leather on the transmission roller. And parts such as the conveying rollers and the pressing rollers are matched for use, so that the edge skins can be conveyed in batches for cleaning, and the cleaning efficiency can be effectively improved.

The invention discloses an intelligent control spraying device driven by a gear connecting rod, and relates to the technical field of intelligent spray-washing, a driving rod is arranged between a spray-washing head and the surface of a cylinder to be spray-washed, the driving rod controls the inclination angle of the spray-washing head according to the distance between the spray-washing head and the surface of the cylinder, and a spray pressure control valve is arranged in the spray-washing head. The single crystal silicon column spraying device has the advantages that self-adaption resetting of the spraying device can be promoted through elastic force, additional manual adjustment is not needed, operation steps are reduced, meanwhile, when the spraying control rod is moved to the position making contact with a single crystal silicon column, the spraying device can be conveniently adjusted, and the spraying device is convenient to use and high in practicability. And the sealing ring on the other side can be sealed in a self-adaptive mode according to the rotating direction of the driving rod, so that the sealing ring can be sprayed to the outer wall of the monocrystalline silicon column more accurately during spraying, and the operation convenience and the self-adaption degree are improved.

The invention provides a preparation method for improving resistivity uniformity of a whole rod of heavily-doped monocrystalline silicon, and relates to the technical field of heavily-doped monocrystalline silicon drawing, in the crystal drawing process, crystal bar drawing is carried out through first furnace pressure from seeding to growing to a first equal-diameter preset length; drawing a second equal-diameter predetermined length from the first equal-diameter predetermined length, and reducing the furnace pressure according to a predetermined rate to reduce the first furnace pressure to a second furnace pressure; after the diameter is equal to a second preset length, crystal bar drawing is carried out through second furnace pressure; in the crystal growth process, along with crystal growth and furnace pressure stage reduction, segregated doped gas is continuously volatilized, so that the resistivity of the tail of a crystal bar is improved, the axial resistivity fluctuation range is controlled within + / -5%, and the harsh requirement of a high-end semiconductor device for a substrate material is met.

A photovoltaic monocrystalline silicon wafer and a solar cell comprising same, belonging to the technical field of solar cells, and in particular to the technical field of photovoltaic silicon wafers. The resistivity of the silicon wafer is 50-500 Ω•cm; and the oxygen content of the silicon wafer is less than or equal to 8x1017 atom / cm3, preferably 1.5×1017-6×1017 atom / cm3. Solar cells manufactured from the silicon wafer have high consistency in photoelectric conversion efficiency.

The invention discloses a far-infrared silicon-based high-transmittance metasurface and a designing and processing method, and relates to the field of micro-nano optical devices. The metasurface is of a layered stacking structure with a hole-type metasurface atom array layer as a center layer, and an upper antireflection film layer, an upper substrate layer, the hole-type metasurface atom array layer, a lower substrate layer and a lower antireflection film layer are sequentially arranged on the metasurface from the incident side to the emergent side. Each of the upper antireflection film layer and the lower antireflection film layer comprises a first antireflection layer and a second antireflection layer which are sequentially arranged from inside to outside; the hole-type super-structure atom array layer, the upper substrate layer and the lower substrate layer are all made of monocrystalline silicon. According to the invention, the equivalent refractive index of the matching interface is designed through the sub-wavelength structure, the reflectivity of the far infrared band of 8-12 [mu] m is improved to 95% or more under the condition of no loss, the process route is simple, and the microstructure units of the surface of the super-structure are packaged and protected by using the silicon-silicon bonding process, so that the stability of the surface of the super-structure in processing and application is improved.

The invention discloses a suede structure, a perovskite solar cell and a preparation method. The preparation method of the textured structure comprises the following steps: providing a substrate containing monocrystalline silicon, wherein the monocrystalline silicon is positioned on the surface of the substrate; a tower footing is formed on the surface of the substrate by etching a specific crystal face of monocrystalline silicon, the tower footing comprises a tower bottom and side walls surrounding the tower bottom, and the side walls of the tower footing form a net-shaped frame; forming a protective layer on the surface of the base, wherein the thickness of a first part, corresponding to the side wall of the tower footing, in the protective layer is greater than that of a second part, corresponding to the tower bottom of the tower footing, in the protective layer; cleaning the protective layer, completely removing the second part, and partially removing the first part; preparing a suede structure at the tower bottom of the tower footing; and cleaning to remove the remaining first part. The textured structure prepared by the preparation method can improve the photoelectric conversion efficiency of the perovskite solar cell.

According to the invention, heavy arsenic doping 1t is reduced; 111gt, 111gt; the invention relates to a crystal pulling method based on crystal orientation monocrystalline silicon section defect density and a monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon pulling. In the equal-diameter process, the liquid opening distance is constant, the pulling speed of the crystal bar is gradually reduced according to the length of the crystal bar, and the ratio (CR / SR) of crystal rotation / pot rotation is adjusted, so that heat conduction is uniformly transmitted in the radial direction of the crystal bar by controlling the growth rate of crystals, the temperature gradient of a solid-liquid interface and precipitation of oxides, and the heat conduction efficiency is improved. And in the crystal growth process, point defects such as interstitial atoms and vacancies have more opportunities to diffuse outwards, so that the generation of the point defects and impurity decorations is inhibited, the defect density of the section of the single crystal silicon rod is reduced, and the quality of the heavily arsenic-doped crystal rod is improved.

The application discloses a vertical micro-mirror structure optical computing chip and a wafer-level intelligent manufacturing method thereof, and relates to the field of optical computing chips.The optical computing chip comprises a plurality of optical modulators and a plurality of quantum logic gates, and the optical modulators are provided with interference light paths based on vertical micro-mirrors, so that optical modulation is realized; the quantum logic gates construct stable light paths through the mirrors provided by the vertical micro-mirrors, realize interference by means of a beam splitter, and perform Hadamard transformation by a wave plate at the entrance or exit of a target light path, so that optical computing is realized; a deep-groove beam splitter or a deep-wall beam splitter is used as the beam splitter, the silicon walls in the deep-wall beam splitter are provided with a predetermined included angle perpendicular to the two side walls of the substrate, and the deep-groove beam splitter is manufactured in the following manner: a deep groove pattern is photoetched on the surface of a single-crystal silicon wafer; the deep groove with the predetermined angle is etched by deep etching and the side walls are smoothed; an optical thin film is deposited in the deep groove; the shape of the deep-groove beam splitter is photoetched and etched by deep etching, and the side walls are smoothed; and an optical antireflection film is grown on the vertical side walls.

The utility model relates to monocrystalline silicon processing technical field, and disclose a cutting silicon core blanking device for monocrystalline silicon processing, including guide table, guide chute, protective layer, transport device, conveyer belt, fixed clamp holder, adjustable clamp holder, limit hole, screw shaft, clamping layer, nut, in the utility model, when the monocrystalline silicon rod is cut by diamond wire and forms the silicon wafer blanking, the silicon wafer can be buffered and received by the protective layer and downwardly rolls and guides, and the fixed clamp holder and adjustable clamp holder on the conveyer belt correspond to the position of guide chute, at this time, the silicon wafer can roll down and fall into the fixed clamp holder and adjustable clamp holder between the guide chute and be collected, and the clamping layer between the fixed clamp holder and adjustable clamp holder can clamp and protect the falling silicon wafer, and the adjustable clamp holder can be located outside the screw shaft and slide and adjust to adapt to the silicon wafer thickness, when the transport device drives the conveyer belt and starts conveying, the silicon wafer between the fixed clamp holder and adjustable clamp holder can be automatically collected and conveyed.

The invention discloses a polyimide-aluminum oxide composite film material and a preparation method thereof, the composite film material is composed of a polyimide layer and an aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the thickness of the polyimide layer and the thickness of the aluminum oxide layer are both nanoscale; the composite film material is prepared by using atomic layer deposition equipment, and the preparation method comprises the following steps: firstly, depositing a nanoscale polyimide layer on a monocrystalline silicon piece carrier according to a set program by taking pyromellitic dianhydride and hexamethylenediamine as precursor raw materials; and depositing and combining a nanoscale aluminum oxide layer on the upper surface of the polyimide layer according to a set program by taking trimethylaluminum and distilled water as precursor raw materials. The prepared composite film material is different from a current composite film material prepared by blending polyimide and aluminum oxide and then carrying out film casting, the composite film material has a nano-scale polyimide layer with uniform thickness and a nano-scale aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the composite film material has a good radiation refrigeration effect.

The invention discloses a preparation method of a metal surface micro-pattern texture, and belongs to the technical field of metal materials and machining thereof. The method comprises the following steps: S1, depositing a metal shading layer on a monocrystalline silicon wafer and patterning, spin-coating a polysiloxane precursor, curing and stripping to prepare a flexible transparent photoetching template; s2, conformally attaching a template to the cleaned bent metal surface, and performing ultraviolet exposure and development to form a cured photoresist mask; and S3, the metal workpiece with the mask serves as an anode, the metal workpiece with the mask is placed in HF-HCl mixed electrolyte for electrochemical etching, the voltage is controlled to be 2.0-5.0 V, the time is 2-8 min, and the micron-sized surface texture of 0.5-2.5 microns is obtained. And the thickness of the template is 0.3-3.0 mm, so that the template can adapt to metal surfaces with different curvature radiuses. According to the method, the photoetching-electrochemical etching process is successfully extended to the curved metal surface for the first time, the pattern fidelity is high, the texture depth is controllable, and the method can be widely applied to key parts, needing mechanical sealing and lubricating, of a carrier vehicle body.

The invention relates to the technical field of semiconductor processing, in particular to an oxidation induced fault suppression system for a monocrystalline silicon rapid heat treatment process, comprising: an RTP reaction chamber having an outer reaction chamber and a quartz reaction chamber arranged therein; the heating unit is provided with an upper heating unit and a lower heating unit which are respectively positioned at the top and the bottom of the quartz reaction cavity; the gas path structure is provided with an upper-layer process gas pipeline and a lower-layer process gas pipeline which are connected to the interior of the quartz reaction cavity, high-purity argon is introduced into the upper layer, nitrogen-hydrogen mixed gas is injected into the lower layer, and oxygen readsorption is inhibited through gas layering; the in-situ monitoring module is arranged on the lower side of the quartz reaction cavity and is used for monitoring the crystal temperature gradient and the oxygen precipitation density.

The utility model belongs to the technical field of monocrystalline silicon processing equipment, and discloses low-loss high-precision monocrystalline silicon square rod loop line squaring equipment which comprises a transverse plate, a lifting block is fixedly mounted in the middle of the rear end of the transverse plate, and connecting rods are movably sleeved on the left side and the right side in the transverse plate respectively. Through the arrangement of the connecting rod, the inclined rod, the rectangular plate and the driving motor, after the driving motor is started, the driving lead screw rotates, and due to the fact that the outer surface of the driving lead screw is in threaded connection with the inner surface of the rectangular plate in a sleeving mode, under the action of the driving lead screw, the rectangular plate drives one end of the inclined rod to move along the outer surface of a limiting rod; the other end of the inclined rod generates pulling force on the connecting rods, the two connecting rods are pulled to drive the first fixing block and the second fixing block to move oppositely, the length of the cutting line can be adjusted, and therefore the situation that the cutting line is too long and is prone to loosening, and then the cutting precision is affected is prevented.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

The invention discloses a czochralski silicon thermal field and a single crystal furnace structure. The thermal field comprises a heater assembly, a middle-upper heat preservation and supporting assembly, a lower heat preservation and crucible supporting assembly and a water-cooling heat insulation assembly, and the heater assembly is fixed on a furnace cover. According to the thermal field structure, the structural form that all assemblies of an existing thermal field are arranged on the furnace bottom plate is changed, a thermal insulation and thermal field supporting structure of the thermal field is fixedly installed in the main furnace chamber, and a heater of the heater assembly is connected to the furnace cover. The heater assembly of the thermal field adopts a hoisting type design, corrosion of oxides to heater feet and copper electrodes is greatly weakened, the service life of the device is prolonged, an upper lifting mechanism is reduced and the time for cleaning the thermal field and replacing a crucible is shortened in cooperation with an open type structure of the furnace bottom of the single crystal furnace, so that the production efficiency is greatly improved, and the production cost is reduced. The safety is better, and the functionality is stronger.

The invention discloses a silicon wafer and a preparation method therefor, a cell sheet, a cell slice, a cell string, and a photovoltaic module. The monocrystalline silicon wafer comprises a silicon wafer main body and an extension edge that extends outwards from an edge of the silicon wafer main body, the silicon wafer main body is a right-angled square slice or a rounded square slice, the extension edge is a ribbon-shaped structure parallel to the edge of the silicon wafer main body, and the extension edge is used to overlap below the adjacent monocrystalline silicon wafer during welding. By making the extension edge overlap below the adjacent cell sheet or cell slice, a sheet gap is reduced, an increase in an arrangement density of the cell sheets or cell slices is facilitated, and an efficiency of a photovoltaic module is increased. Since the adjacent cell sheet or cell slice shields the extension edge rather than the silicon wafer main body, the area of the cell sheet or cell slice involved in power generation is increased, and an increase in the power of the photovoltaic module is facilitated.

The invention discloses a TBC crystalline silicon cell doped on the back step by step and region and a preparation method of the TBC crystalline silicon cell. The preparation method comprises the steps that an N-type monocrystalline silicon substrate is provided, the substrate comprises a front face and a back face, annealing treatment is carried out on the back face in a partitioned and step-by-step mode, and doping activation of independent areas is carried out; preparing a textured structure with pyramid morphology on the front surface of the N-type monocrystalline silicon substrate to enhance the light trapping effect; and performing a metal slurry screen printing process on the first region and the second region, performing high-temperature sintering, forming a metal electrode in contact with the first doping layer in the first region, forming a metal electrode in contact with the second doping layer in the second region, and preparing the TBC crystalline silicon battery. According to the invention, the technical problems of incompatibility of boron and phosphorus doped region doping processes, increase of the complexity of a process route, influence on the cell performance and the like in the prior art can be solved, the open-circuit voltage and the fill factor of the cell can be effectively improved, and the photoelectric conversion efficiency of the TBC crystalline silicon cell is improved.

The invention discloses a monocrystalline silicon wafer alkali polishing additive and a preparation method and application thereof, and the alkali polishing additive comprises the following components by mass content: 0.5-4% of a reaction accelerator, 2-5% of a corrosion and scale inhibitor, 1.5-3% of a chelating agent, 1-3% of a pH regulator, 1-5% of a surfactant, 3-10% of a cosolvent and the balance of water according to the total mass of 100%. The alkali polishing additive is obvious in performance gain, good in etching selectivity and small in silicon wafer weight loss; the back polishing effect can be improved, the reflectivity of the silicon wafer is high, and the photoelectric conversion efficiency of a photovoltaic cell is improved; the anti-crystallization performance is excellent, and the environment is protected.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a monocrystalline silicon preparation method for improving forward voltage drop of a power device, the power device and monocrystalline silicon, and the method comprises the following steps: when a monocrystalline silicon rod is drawn by a czochralski method, the growth crystal orientation is 1t by controlling crystal pulling parameters and cooling parameters in an equal-diameter process; 111gt, 111gt; the silicon single crystal rod, the crystal pulling parameters and the cooling parameters are configured as follows: interstitial oxygen precipitation can be inhibited to form silicon dioxide precipitation, so that the volume microdefect density in the grown silicon single crystal is lower than a preset threshold value, and the method provided by the invention inhibits the interstitial oxygen precipitation process by reasonably configuring the crystal pulling parameters and the cooling parameters, so that the yield of the silicon single crystal is improved. According to the present invention, the silicon dioxide deposition formation is reduced, such that the volume micro-defect density in the grown monocrystalline silicon is lower than the preset threshold value, and when the monocrystalline silicon is applied to the ultra-fast recovery diode product, the forward voltage drop value VF can be reduced so as to be within the range of 1.3-1.7 V so as to meet the customer requirements.