1434 results about "Monocrystalline silicon" patented technology

The present invention provides a single crystal furnace and a single crystal silicon rod annealing method, the single crystal furnace comprises: a main chamber comprising a furnace body and a throat structure located above the furnace body which are connected with each other, and the furnace body is used for forming a single crystal silicon rod; the auxiliary chamber is mounted above the throat structure; the flow guide cover is arranged in the main chamber and located at the throat structure, the flow guide cover comprises a cover body, and the cover body is provided with a middle flow channel allowing the silicon single crystal rod to penetrate through and an annular flow channel surrounding the middle flow channel; the throat structure is provided with an inlet which is communicated with an inlet of the annular flow channel so as to introduce a first fluid into the annular flow channel; an inlet of the middle flow channel is communicated with the auxiliary chamber so as to receive a second fluid introduced from the auxiliary chamber; and an outlet of the annular flow channel is communicated with an outlet of the middle flow channel, so that the first fluid and the second fluid are converged to cool the monocrystalline silicon rod, and the problem that the minority carrier lifetime of monocrystalline silicon is easily shortened by a monocrystalline silicon annealing process in the prior art is solved.

The invention relates to the technical field of back contact solar cells, in particular to a back contact solar cell with a double-passivation structure and a preparation method thereof, and the front surface of the cell sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside; a back field region on the back surface of the back contact solar cell sequentially comprises a metal electrode, an antireflection film, a second phosphorus-doped polycrystalline silicon layer, a second tunneling oxide layer, a first phosphorus-doped polycrystalline silicon layer, a first tunneling oxide layer and an N-type monocrystalline silicon wafer from outside to inside; the emitter region sequentially comprises a metal electrode, an antireflection film, a transparent conductive film, a boron-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an N-type monocrystalline silicon wafer from outside to inside; the isolation area sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside. A P-type TOPCon structure of an emitter region of the TBC battery is optimized into an intrinsic amorphous silicon + P-type amorphous silicon passivation structure with better passivation performance and contact performance, and the conversion efficiency is improved.

The invention relates to the technical field of building energy supply, and aims to solve the problem of how to efficiently utilize solar photovoltaic stored energy to supply energy to a building. According to the technical scheme, a monocrystalline silicon photovoltaic module array is laid on the roof of a building, and a lithium battery pack and an alternating-current distribution box are connected through a bidirectional energy storage converter to supply power to electric equipment of the building. The meteorological data acquisition module is used for measuring an irradiance value and a temperature value, and the load monitoring module is used for acquiring electric power. In the building energy management platform, a photovoltaic power generation prediction model generates a photovoltaic output prediction curve in combination with real-time and prediction data, a building load prediction model generates a load power demand curve according to historical and regular data, and an energy storage control decision-making model performs energy storage control according to a difference matrix between the two. A lithium battery pack charging and discharging power distribution scheme is obtained through a dynamic programming algorithm, and the bidirectional energy storage converter is controlled. The system is mainly used for realizing efficient and stable solar photovoltaic energy storage and supply of buildings.

A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The invention relates to the technical field of clean energy power generation, in particular to power generation equipment based on wind, light and heat multi-energy coupling. The power generation equipment comprises a vertical axis wind power generation and heat dissipation device, a photovoltaic and temperature difference power generation composite device, a double-axis tracking device and a tower type supporting frame. The vertical axis wind power generation and heat dissipation device captures wind energy through the impeller assembly so as to drive the driving assembly and drive the heat dissipation assembly to rotate at a high speed, and active heat dissipation is provided for the photovoltaic and thermoelectric power generation composite device. The photovoltaic and thermoelectric power generation composite device comprises a monocrystalline silicon photovoltaic cell, a first annular plate, a second annular plate and a plurality of aluminum extrusion type cooling fins, light energy can be effectively utilized, and waste heat collection and thermoelectric power generation are achieved. According to the power generation equipment, structural support is provided by the tower type supporting frame, and the comprehensive utilization efficiency of energy in unit space is remarkably improved through coupling utilization of wind energy, light energy and heat energy.

The invention discloses a multi-energy coordination and monitoring platform for offshore oil and gas development, which relates to the technical field of multi-energy coordination and comprises a floating platform main body, and a solar power generation array (1), a sub power generation system (2), a main power generation system (3) and a water turbine cross beam (4) which are positioned on the floating platform main body, the floating platform main body adopts a hexagonal modular structure; the solar power generation array (1) comprises a plurality of monocrystalline silicon photovoltaic panels which are uniformly distributed on the floating platform main body; the sub power generation systems (2) are positioned at six vertexes of the floating platform main body; the main power generation system (3) is located in the center of the floating type platform body. And the water turbine cross beams (4) are uniformly distributed on the periphery of the floating platform main body. By comprehensively utilizing renewable energy sources such as solar energy, wind energy, wave energy and ocean current energy, stable and sustainable energy supply can be provided for the offshore oil and gas platform, and various pain points of a traditional energy supply mode are overcome.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention discloses a machining method for a monocrystalline silicon complex curved surface optical element. The machining method comprises the steps that S1, ultra-precision turning is conducted on the monocrystalline silicon complex curved surface optical element; s2, magneto-rheological polishing and shaping are carried out on the monocrystalline silicon complex curved surface optical element; s3, fairing the monocrystalline silicon complex curved surface optical element; and S4, the surface shape precision and the surface roughness of the monocrystalline silicon complex curved surface optical element are detected, if the detection result meets the requirement, machining is completed, and if the detection result does not meet the requirement, the step S2 is executed again. The method is simple in technological process and high in operability, after ultra-precision turning, the surface shape precision is good, subsurface damage is small, the grinding process can be omitted, the task load of the follow-up process is reduced, and the machining period of the monocrystalline silicon complex curved surface optical element is effectively shortened; by adopting a processing mode of combining ultra-precision turning and magneto-rheological polishing modification, processing and manufacturing of high-precision and high-surface-quality monocrystalline silicon complex curved surface elements can be realized.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

The invention discloses an anti-interference system for a slip ring communication technology, and belongs to the technical field of communication. Aiming at the problems of electromagnetic interference, mechanical vibration and unstable contact of monocrystalline silicon furnace equipment, a collaborative solution is provided. The system comprises a conductive slip ring assembly, a dynamic shielding module, an asymmetric differential transmission module, an intelligent filtering module, an environment sensing module and a contact impedance compensation module, and real-time cooperative control is realized through a bus controller. The dynamic shielding module adopts a liquid metal micro-channel layer and a piezoelectric driving layer, the shielding density is dynamically reconstructed according to the electromagnetic interference frequency band and the vibration intensity, and broadband noise is suppressed; the asymmetric differential transmission eliminates common-mode interference through dynamic phase compensation; the intelligent filtering module adaptively adjusts parameters of a band elimination filter based on a deep learning model, and accurately suppresses time-varying interference; the carbon nanotube composite electric brush stabilizes contact impedance through a pressure feedback mechanism. The system is obviously superior to a traditional static shielding and fixed filtering scheme, and reliable communication requirements are guaranteed.

The invention belongs to the technical field of monocrystalline silicon wafer processing, and provides a cutting processing and processing method for reducing the surface roughness of a monocrystalline silicon wafer, which comprises the following steps of: bonding and curing; preparing a cutting cooling liquid; arranging a wire net; setting cutting parameters; carrying out post-treatment; and laser repairing. Compared with a silicon wafer processed by a traditional electroplating diamond wire technology, the number of line marks of the monocrystalline silicon wafer obtained through processing is obviously reduced by adjusting cutting parameters and prolonging a bidirectional reciprocating cutting reversing period, and the number of the line marks on the surface of the monocrystalline silicon wafer can be controlled within three; according to the cutting processing method, by reducing the machine speed, the line mark depth of the monocrystalline silicon wafer can be reduced to be within 5 microns; according to the method, the processed silicon wafer is subjected to laser repairing, industrialization and automation of efficient laser repairing of the silicon wafer are expected to be achieved through the reconstruction mechanism of a monocrystalline silicon lattice structure in the laser irradiation process, line marks on the surface of the repaired silicon wafer can reach within 3 micrometers, and the surface roughness of the silicon wafer is reduced.

The invention relates to the technical field of sensor testing, in particular to monocrystalline silicon differential pressure sensor function verification testing equipment which comprises a communication switching mechanism, a low-pressure pipe and a high-pressure pipe, high-pressure input and low-pressure input can be accurately controlled by connecting the low-pressure pipe and the high-pressure pipe to different pressure sources respectively, the full-range testing requirement of a differential pressure sensor is met, and the testing efficiency is improved. Common pressure combinations such as high pressure and low pressure, low pressure and high pressure, double high pressure and double low pressure in an industrial field can be simulated through the communication switching mechanism, performance verification of the sensor in a real environment is ensured, and the problem that an existing testing device cannot simulate a real testing environment and a multi-working-condition testing scene is solved.

A semiconductor device including: a first level including: a first silicon layer including a first single crystal silicon; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a second level including a second single crystal silicon and a plurality of transistors, the second level is disposed over the second metal layer; a third metal layer disposed over the second level; a fourth metal layer disposed over the third metal layer; a via disposed through the second level, where the via has a diameter of less than 450 nm, where the second level thickness is less than four microns; and at least one temperature sensor.

The invention discloses a secondary texturing method, a monocrystalline silicon wafer and a solar cell, the textured monocrystalline silicon wafer is immersed in a secondary texturing solution, and texturing is carried out for 100-200 s at 55-70 DEG C, so that the textured structure of the monocrystalline silicon wafer comprises a pyramid with the bottom edge length of 2-7 [mu] m, the top of the pyramid is round and full, the pyramid is overlooked, and the textured structure of the monocrystalline silicon wafer is obtained. And the side surface of the tower is provided with a step-shaped microstructure which is transited to the tower top layer by layer. The textured structure prepared by the method disclosed by the invention is beneficial to uniform growth of the amorphous silicon film, the passivation quality of amorphous silicon is improved, the service life of a carrier is prolonged, the light trapping effect is improved, and the reflectivity of a silicon wafer is reduced. Meanwhile, the prepared suede structure has a larger specific surface area, so that the contact area of the low-temperature conductive silver paste and the silicon wafer is larger, and the silver paste and the silicon wafer have better ohmic contact; the step-shaped microstructure of the tower surface enables the adhesive force of the silver paste to be increased on the surface of the pyramid, the width of the grid line can be reduced, the shading area and the silver paste consumption are reduced, and the purposes of reducing cost and improving efficiency of the HJT battery are achieved.

The invention relates to an all-silicon metasurface infrared optical filter based on a bound state in a quasi-continuous domain and a manufacturing method of the all-silicon metasurface infrared optical filter. Belongs to the technical field of micro-nano optics, and particularly relates to the technical field of all-silicon metasurface infrared optical filters. The problem that application of the metasurface optical filter under an infrared broadband light source is limited is solved. The all-silicon metasurface infrared optical filter based on the bound state in the quasi-continuous domain comprises a self-supporting silicon frame, a monocrystalline silicon thin film and a nanometer cavity array. The monocrystalline silicon thin film is attached to the self-supporting silicon frame, and a nano cavity array is etched on the surface of the monocrystalline silicon thin film; one surface of the self-supporting silicon frame attached with the monocrystalline silicon film is a light incident surface, and the other surface is a light emergent surface; incident light is irradiated to the nano cavity array on the monocrystalline silicon film in a normal or a certain incident angle to excite a surface resonance mode and a bound state in a quasi-continuous domain, the surface resonance mode and the bound state in the quasi-continuous domain are subjected to interference coupling under the same resonance frequency to form a space overlapping mode, and the incident light is modulated and emitted from the other face of the self-supporting silicon frame.

The invention relates to the technical field of monocrystalline silicon corrosion treatment, in particular to a monocrystalline silicon sample corrosion system and a corrosion process thereof, the corrosion system comprises a corrosion tank, a material carrying box and a cover plate, the corrosion tank is filled with corrosion liquid, and the corrosion tank is divided into an inner tank and an outer tank. The device is provided with the inner tank, the outer tank and the material carrying box, during corrosion operation, a corrosion liquid in the outer tank directionally flows into the inner tank, and the corrosion liquid in the inner tank flows from bottom to top, so that the corrosion liquid reacted with a monocrystalline silicon sample and a reaction product flow from bottom to top, and the corrosion liquid is separated from the reaction product. By controlling the immersion time of the monocrystalline silicon sample in the corrosive liquid, the corrosive liquid around the monocrystalline silicon sample is ensured not to react with the monocrystalline silicon sample all the time, so that the concentration of the corrosive liquid around the monocrystalline silicon sample is ensured to be unchanged as far as possible, the corrosion speed of the corrosive liquid can be accurately predicted, and the corrosion speed of the monocrystalline silicon sample can be accurately predicted by controlling the immersion time of the monocrystalline silicon sample in the corrosive liquid. Therefore, the corrosion depth and the surface appearance of the surface of the monocrystalline silicon sample can be accurately controlled.

The invention provides a method for improving passivation contact performance of a p region of a TBC battery, which comprises the following steps of: pretreating an n-type monocrystalline silicon wafer, depositing a SiO2 layer and boron (B) doped polycrystalline silicon (poly-Si), etching, performing laser ablation and the like, then depositing phosphorus (P) doped poly-Si, and finally depositing a passivation and anti-reflection layer and preparing a metal electrode. A tunneling oxide layer and boron in-situ doped polycrystalline silicon are deposited in a p region by adopting an ultra-low temperature plasma enhanced chemical deposition (PECVD) mode, the reaction of SiH4 and N2O is introduced to improve the deposition effect of the oxide layer at low temperature, the compactness of a film layer at low temperature is ensured to improve the separation of B on a SiO2 / c-Si interface, and the passivation performance is improved; b doping poly-Si is adopted in the p region, meanwhile, processing is matched with a nanosecond laser, non-equilibrium doping of the B to the poly-Si is achieved, the ultrahigh doping concentration is obtained, the p region passivation performance of the TBC is improved, and then the open-circuit voltage and the conversion efficiency of the TBC battery are finally improved.

The invention provides a pickling additive, a use method, a monocrystalline silicon wafer and a solar cell. The pickling additive comprises the following components in parts by weight: 1-5 parts of organic acid, 0.1-0.5 part of a nonionic surfactant, 0.2-2 parts of a corrosion inhibitor, 1-5 parts of a chelating agent, 5-20 parts of an accelerator, 3-5 parts of an oxidant, 1-5 parts of a solvent and 60-80 parts of deionized water. Wherein the mass ratio of the accelerator to the oxidant is (1.5-5): 1; the solvent dielectric constant is greater than or equal to 30. By adopting the acid pickling additive disclosed by the invention, the dosage of HF can be reduced, impurities on the surface of a silicon wafer can be effectively cleaned in a wet process HF tank, the surface of the silicon wafer cannot be damaged, the physical and chemical properties of the silicon wafer cannot be influenced, and residues of organic matters and metal ions on the surface of the silicon wafer can be reduced; and adverse effects of impurities on subsequent processes of battery production are reduced, so that the yield and efficiency of solar battery production are improved.

The invention provides a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, the silicon single crystal rod contains hydrogen element, the silicon single crystal rod has a center and an edge along the radial direction of the silicon single crystal rod, and (CH1-CH2) / CH2 is more than or equal to 0 and less than or equal to 35%; and the dislocation density of the silicon single crystal rod meets the condition that (rho1-rho2) / rho1 is greater than or equal to-80% and less than or equal to 80%. According to the silicon single crystal rod provided by the invention, the hydrogen element is doped, and the distribution uniformity of the hydrogen element in the radial direction of the silicon single crystal rod is controlled, so that the recombination effect of defects such as dislocation and vacancy on carriers is effectively reduced in the radial range of the whole silicon single crystal rod, the minority carrier lifetime is prolonged, meanwhile, the stress distribution in the silicon single crystal rod is improved, and the service life of the silicon single crystal rod is prolonged. And the stress is more uniformly released on the cross section of the whole silicon single crystal rod, so that the mechanical property of the silicon rod is enhanced.

The invention provides a crystal pulling method for improving the BMD defect density in monocrystalline silicon and a monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon crystal pulling, and particularly relates to the following steps: stabilizing the oxygen content in a crystal in a relatively high interval by cooperatively regulating and controlling the argon flow, the furnace pressure, the crucible rotating speed, the crystal rod rotating speed and the pulling speed, providing a sufficient oxygen source for generation of BMD defects, and improving the BMD defect density in the monocrystalline silicon on the basis of stabilizing the oxygen content in the crystal in a relatively high interval. In the equal-diameter process, temperature compensation is carried out on a crystal bar through a preset temperature compensation device, diffusion and precipitation of oxygen atoms are effectively promoted to form BMD crystal nucleuses, the BMD body defect density and the axial distribution uniformity are remarkably improved, the specification lower limit of the BMD density is promoted to be improved to 1.0 E + 11 ea / cm < 3 > or above, the internal gettering capacity of a silicon wafer is finally enhanced, and the service life of the silicon wafer is prolonged. And a reliable guarantee is provided for improving the performance and yield of the device.

The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to a silicon dopant volatilization compensation evaluation method and system based on process analysis, and the method comprises the steps: obtaining a doping target instruction in a monocrystalline silicon drawing process, analyzing the doping target instruction, and obtaining a dopant target concentration value and a dopant target uniform characteristic value of each drawing stage; aiming at each drawing stage, setting a corresponding monitoring frequency, and monitoring drawing process parameters according to the monitoring frequency to obtain a real-time process parameter set; performing doping volatilization analysis on the real-time process parameter set to obtain an actual concentration value and an actual uniform characteristic value of the dopant under the process condition; based on the dopant target concentration value, the dopant actual concentration value, the dopant target uniform characteristic value and the dopant actual uniform characteristic value, calculating concentration deviation and uniform characteristic deviation; the device can be dynamically adjusted along with the propulsion of the drawing process and the change of technological parameters, so that the high-efficiency compensation on the volatilization of the dopant is realized.

This invention discloses a texturing additive for preparing monocrystalline silicon with a bamboo shoot-like textured surface and its application process. The mass percentage of each component in the texturing additive is as follows: polyvinyl alcohol 0.01-0.2%, polymeric dispersant 0.03-0.25%, texture modifier 0.005-0.025%, reaction promoter 0.4-1.5%, and the balance being water. Using the texturing additive of this invention, monocrystalline silicon wafers can be texturized once or twice. When applied to the monocrystalline silicon texturing process, the additive of this invention can obtain a "bamboo shoot-like" textured surface structure. This textured surface structure has a stronger absorption effect on sunlight than the traditional pyramid textured surface structure, resulting in a significant improvement in the current performance of the solar cells. Furthermore, the additive of this invention is applicable not only to primary and secondary texturing processes, but also to secondary texturing processes where the same type of additive is used in both texturing tanks, greatly improving production line compatibility and reducing production line supply costs.

The invention discloses a method for automatically measuring resistivity in a crystal pulling process. The method comprises the following steps: arranging an exciting coil in a water cooling screen of a crystal pulling furnace, introducing alternating current to generate a magnetic field, cutting the magnetic field by utilizing rotation and lifting motion of a crystal bar to generate eddy current, measuring impedance change of the coil, and calculating the resistivity in combination with a formula. According to different pulling speeds of seeding, shouldering, shoulder rotating and equal-diameter stages in the crystal pulling process, the alternating current frequency and the sampling rate are dynamically adjusted, and the eddy current signal sensitivity is optimized. The surface temperature of the crystal bar is obtained in real time by adopting a temperature monitoring device, and the error of the temperature to the resistivity is corrected by combining first principle calculation or molecular dynamics simulation. A machine learning algorithm predicts shoulder resistivity based on a historical doping database. According to the method, real-time and accurate resistivity measurement in the crystal pulling process is achieved, the product yield is remarkably improved, resistance reverse cutting is reduced, the method is suitable for photovoltaic and semiconductor monocrystalline silicon production, and an efficient and reliable solution is provided for process optimization.

The invention provides a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell. The invention provides a silicon single crystal rod. The silicon single crystal rod contains a hydrogen element. The ratio of the resistivity of the head of the monocrystalline silicon rod to the resistivity of the tail of the monocrystalline silicon rod is 0.8-2.0; and the dislocation density of the silicon single crystal rod meets the condition that (rho1-rho2) / rho1 is greater than or equal to-80% and less than or equal to 80%. The silicon single crystal rod provided by the invention is doped with the hydrogen element, so that the distribution uniformity of the doped element in the silicon single crystal rod is improved, the internal defects of the silicon single crystal rod in the growth process are reduced, and the overall mechanical property and electrical property of the silicon single crystal rod are improved by controlling the distribution of the dislocation density of the silicon single crystal rod within a reasonable interval.

The invention provides a semiconductor device with a trench gate and a forming method thereof, and the method comprises the steps: firstly executing a first exposure process and a first etching process to form a bottom gate oxide of a trench, then forming a monocrystalline silicon layer, executing a second exposure process and a second etching process to form a trench, exposing the top surface of the bottom gate oxide through the trench, and then forming the trench gate, the trench gate is located in the trench and located on the bottom gate oxide, the first exposure process and the second exposure process adopt the same mask, and the polarity of the second photoresist layer is opposite to that of the first photoresist layer. The unexpected effects of the invention are that the thickness of the bottom gate oxide of the groove can be more conveniently controlled, the bottom gate oxide of the groove is firstly formed, and then the monocrystalline silicon layer and the groove are formed, so that the problem that the bottom gate oxide is easy to seal in advance due to a high-density plasma process after the groove is formed is avoided, the process difficulty can be simplified, and the production efficiency is improved. And meanwhile, the possibility of thick bottom gate oxide is provided for the MOS device with a small critical size, and the density of the device can be improved.

The invention belongs to the technical field of gas sensors, and particularly relates to an ultra-low power consumption nano-electromechanical resonant NO2 gas sensor based on an audio frequency comb and a method. Wherein the drain electrode and the source electrode are respectively arranged on the silicon dioxide insulating layer, an I-shaped groove is embedded in the silicon dioxide insulating layer between the drain electrode and the source electrode, an I-shaped gate electrode is arranged in the I-shaped groove, and the adsorption layer is laid on the silicon dioxide insulating layer and covers the surfaces of the drain electrode and the source electrode. The middle part of the adsorption layer is suspended above the I-shaped gate electrode, and the silicon dioxide insulating layer is arranged on the monocrystalline silicon substrate; specific detection of NO2 is achieved through single-layer graphene, the internal resonance excitation audio frequency comb phenomenon is introduced, the gas detection sensitivity and resolution are greatly improved, and sub-ppb-level NO2 gas detection is achieved.

The invention provides a photovoltaic monocrystalline silicon wafer and a solar cell comprising the same, and belongs to the technical field of solar cells, in particular to the technical field of photovoltaic silicon wafers. The resistivity of the silicon wafer is 50 to 500 omega.cm; the oxygen content of the silicon wafer is less than or equal to 8 * 10 < 17 > atom / cm < 3 >, preferably 1.5 * 10 < 17 > to 6 * 10 < 17 > atom / cm < 3 >. A battery prepared from the silicon wafer provided by the invention is high in photoelectric conversion efficiency concentration ratio.

The invention provides a high performance liquid chromatography detection method of a monocrystalline silicon wafer cutting fluid. The monocrystalline silicon wafer cutting fluid is subjected to high performance liquid chromatography detection so as to quantitatively determine components of the monocrystalline silicon wafer cutting fluid. A chromatographic column is Poroshell 120EC-C18, a mobile phase is prepared from acetonitrile and water according to a volume ratio of (68-72): (28-32), the flow velocity of the mobile phase is 0.5-1.0 mL / min, the detection wavelengths are 205-215 nm and 236-240 nm, the column temperature of the chromatographic column is 30-40 DEG C, the sample injection volume is 20-30 [mu] L, and a detector is a DAD detector; the monocrystalline silicon wafer cutting fluid comprises a dispersing agent, a wetting agent and a solvent; the dispersing agent is EO / PO block polyether; the wetting agent is selected from at least one of polyether modified organic silicon and polyethylene glycol; the solvent is water. The problems that in the prior art, the component analysis cost of the cutting fluid is high, and the requirement for operators is high are solved.

The invention relates to the technical field of semiconductor manufacturing, and discloses a method for manufacturing a semiconductor isolation structure, which comprises the following steps of: (1) forming a plurality of shallow isolation corrosion grooves on one surface of a monocrystalline silicon substrate by using an STI (shallow trench isolation) process; forming a plurality of deep isolation corrosion grooves in the other surface of the monocrystalline silicon substrate by using a Trench process; (2) etching and forming an isolation channel with the design thickness of d1 on the monocrystalline silicon substrate with the plurality of shallow isolation etching grooves and the plurality of deep isolation etching grooves by using a wet etching process, so that the isolation channel, the plurality of shallow isolation etching grooves and the plurality of deep isolation etching grooves are communicated with one another to form an isolation structure; and (3) putting the monocrystalline silicon substrate with the isolation structure into thermal oxidation equipment, filling the isolation structure with silicon dioxide by using a thermal oxidation process, and expanding the thickness of an isolation channel from a design thickness d1 to a target thickness d2. The isolation structure prepared by the method is good in electrical isolation capability, and can meet the requirements of products with high working voltage and large working current.