738 results about "Monocrystalline silicon" patented technology

A memory device includes a diode driver and a data storage element, such as an element comprising phase change memory material, and in which the diode driver comprises a silicide element on a silicon substrate with a single crystal silicon node on the silicide element. The silicide element separates the single crystal silicon node from the underlying silicon substrate, preventing the flow of carriers from the single crystal silicon node into the substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The single crystal silicon node acts as one terminal of a diode, and a second semiconductor node is formed on top of it, acting as the other terminal of the diode.

Monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications, in the form of a single crystalline diamond structure having one or more diamond layers, at least one of which is formed by a CVD process. The diamond layers are “lattice-matched” or “lattice-mismatched” to each other to provide a desired level of strain.

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Monocrystalline silicon solaode chemical etching, washing, drying method and integral processor belong to technique field of chemical etching technique and washing. It characterized in that it not only includes water, acid, alkali, but also ultrasonic participates in etching and washing course: it includes following steps: (1) ultrasonic washes and heats in advance, (2) ultrasonic removes damnification layer, (3) ultrasonic makes herbs into wool, (4) ultrasonic rinses, (5) washing with acid to counteract, (6) ultrasonic rinses, (7) cutting water, (8) hot enthalpy to dry. Positive effects of the invention are: adopting ultrasonic to etch and wash, liquid of making wool can be acted with silicon piece, similar coarseness degree can be generated on surface, perfect pyramid pattern can be obtained; it also eliminates kalium, natrium ion from alkalescent solution, and extends service life of silicon piece; pollution can be decreased, energy consumption and water source can be saved greatly, it is a practical invention.

A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step.

A treatment and reclaim method of single crystal silicon cutting waste liquid comprises the steps: (1). the waste liquid is treated with diluted hydrochloric acid then is stirred and mixed to enable the liquid to become a flowable mixture; (2). the mixed material is heated to separate solid and liquid, by which water and polyethylene glycol are extracted. The polyethylene glycol is obtained by the process of condensation, dehydration and recovery. The solid after being separated is a crude solid mixture of silicon carbide and silicon; (3). the quadratic-cleaning solid mixture of silicon diluted and silicon is obtained after quadratic cleaning to the crude solid mixture obtained in step 2; (4). the mixture is treated by mixed acid liquid comprising HNO3+HF to recover and get silicon diluted and silicon. The method has easy operation, simple equipment, low cost, high efficiency in treatment and recovery. The allover recovery rate calculated based on the weight of waste liquid can reach 26-46 percent and the recovering material can reach or close to the standard index, and can be directly used in solar energy battery production, so the invented method has good economic benefit and also can greatly contribute to environment protective, thereby having large exploration prospect.

A silicon on insulator (SOI) device and methods for fabricating such a device are provided. The device includes an MOS capacitor coupled between voltage busses and formed in a monocrystalline semiconductor layer overlying an insulator layer and a semiconductor substrate. The device includes at least one electrical discharge path for discharging potentially harmful charge build up on the MOS capacitor. The MOS capacitor has a conductive electrode material forming a first plate of the MOS capacitor and an impurity doped region in the monocrystalline silicon layer beneath the conductive electrode material forming a second plate. A first voltage bus is coupled to the first plate of the capacitor and to an electrical discharge path through a diode formed in the semiconductor substrate and a second voltage bus is coupled to the second plate of the capacitor.

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron/gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.

The invention discloses a device for measuring object stress by utilizing a graphene membrane, and a preparation method and a testing method of the device. The testing method is characterized in that graphene is arranged on a flexible stretchable substrate by utilizing a growth and transfer technology of the graphene and is tightly adhered to the surface of a to-be-measured object or a single crystal silicon substrate which is provided with a through hole, a characteristic peak of a Raman spectrum of the graphene can be subjected to shifting and splitting when the to-be-measured object is subjected to deformation or gas pressure difference exists between the internal part and the external part of the through hole, and sensing on strain or gas pressure can be realized basing on shifting and splitting amount of the characteristic peak. According to the device, the preparation method and the testing method, disclosed by the invention, the technical design is simple, the performance is stable, non-contact with the to-be-measured object is realized, and the complexity of an electrical measurement method which is in need of arranging leading wires can be avoided; the strain loading range is large, and the stress measurement accuracy degree is high.

The invention belongs to the field of photoelectricity and building materials and particularly relates to a double-side photovoltaic battery curtain wall assembly and the fabrication method thereof. The double-side photovoltaic battery curtain wall assembly comprises an upper glass layer, a bottom glass layer, and solar battery slices, wherein the upper glass layer, the bottom glass layer and the solar battery slices are hermetically bonded with each other through EVA; the solar battery slice is a double-side monocrystalline silicon solar battery slice; double-side monocrystalline silicon solar battery slices are connected with each other through interconnection strips; and each solar battery slice groups is connected with a terminal box through a bus bar. The fabrication method of the double-side photovoltaic battery curtain wall assembly is also provided. The invention can solve the purpose problem of double-side battery, so that the double-side batteries can be used in the photoelectrical field more generally. The double-side solar battery, i.e. the positive and the negative side of the battery slice, can generate corresponding power under the irradiation of solar light, so that the power of the photovoltaic assembly is increased indirectly, the conversion efficiency of the single battery slice is improved.

The invention relates to a corrosive liquid for preparing monocrystal silicon textured surfaces and a method thereof. The corrosive liquid comprises an alkali solution, sodium silicate and isopropanol, and is characterized by also comprising a perfluoro octoate aqueous solution, wherein the perfluoro octoate aqueous solution has the volume percent of 0.2-1 percent and the concentration within a range of 5*10<-5>-5*10<-3>mol/L; the alkali solution has the mass percent of 1-2.5 percent, the sodium silicate has the mass percent of 0.1-2 percent, and the isopropanol has the volume percent of 0.3-2 percent; and the alkali solution is sodium hydroxide or potassium hydroxide or sodium carbonate. The corrosive liquid has low cost, pyramids formed on the prepared monocrystal silicon textured surfaces have small and uniform sizes, and the corrosive liquid is favorable for solar energy absorption and can be widely applied to the field of solar batteries.

The invention discloses a preparation and purification process of quartz sand and quartz powder and products thereof. The preparation and purification process of quartz sand comprises raw quartz ore, rough separation, fragmentation, water separation, roasting, water fragmentation, soaking in oxalic acid or citric acid, dry grinding or wet grinding, high-gradient magnetic separation, classification, combined process washing, floatation, deionized water washing, special drying. The preparation and purification process of quartz powder comprises quartz sand flotation, ultra fine grinding (dry grinding or wet grinding ), combined process washing, high-gradient magnetic separation, electrostatic separation, deionized water washing, classification, special drying, and vacuum packing. The quartz sand and quartz powder produced with the process of the invention can not foam in the production of glass and chips, an optical fibre and an optical cable can not be broken, the glass does not have water streaks, and the application area is widened. The quartz sand and the quartz powder is suitable for being applied in the fields of monocrystal line silicon, chips, optical fibre and optical cables, war industry, fine chemistry industry and micro-electronics.

The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.

This invention provides a new type of type-N monocrystal silicon solar cells of Al back emission junction including: 1, Ag grating positive electrode, 2, SiNx reduction reflection layer of 80nm thick, 3, a positive N+phosphor diffusion layer of 0.3-0.5um thick, 4, type-N monocrystal silicon chip with the resistivity of 0.2-15ohmcm, 5, a P+ Al-Si alloy layer, 6,a back Al electrode, 7, a back AgAl master grating elctrode, in which, sintering of AlSi alloy and that of the back electrode are separated by two times of silk screen printing Al slurry and two times of sintering.

The invention relates to a NAND memory and a preparing method thereof. The NAND memory comprises a plurality of NAND strings and a monocrystalline silicon layer formed on the plurality of NAND strings. The monocrystalline silicon layer is in contact connection with the NAND strings. Each of the said NAND strings comprises a plurality of conductors/insulator lamination layers, a semi-conductor channel which extends at the vertical direction and traverses through the plurality of conductors/insulator lamination layers; a tunnel layer formed between the plurality of conductors/insulator lamination layers and the semi-conductor channel; and a memory cell layer formed between the tunnel layer and the plurality of conductors/insulator lamination layers. The invention is advantageous in that through separating the preparation of array devices and peripheral devices, it can be prevented that the producing of one device will affect that of the other device; the problem of the prior art that thetemperature is limited due to the fact that the producing of the latter layer is affected by the producing of the former layer can be resolved; good peripheral device performance can be obtained; asthe array device is superposed on the peripheral device, high device density can be realized.

The invention relates to a monocrystalline silicon wafer alcohol-free texturing process and a texturing additive. Firstly, a silicon wafer is placed in preprocessing liquid so as to be preprocessed for 60 s to 300 s, and the silicon wafer is then placed in texturing liquid for texturing. The monocrystalline silicon texturing process includes the steps that deionized water is heated to 70 DEG C to 90 DEG C, sodium hydroxide or potassium hydroxide is added, and monocrystalline silicon texturing corrosive liquid is acquired. When the texturing additive is adopted for texturing, isopropanol or ethyl alcohol is not needed, tiny, even and dense pyramid texturing faces can be acquired, texturing cost is reduced, and environmental pollution is avoided. The preprocessing process is added before the texturing step, the silicon wafer acquired after texturing can be cleaner, rework caused by white spot fingerprints and the like can be reduced, and certain practical value is achieved.

The invention relates to a Zr-Co-Re thin film getter provided with a protection layer, and a preparation method thereof. The Zr-Co-Re thin film getter is composed of a getter layer and the protection layer; main components of the getter layer are Zr, Co, and one or more selected form rare earth elements La, Ce, Pr, and Nd; and main component of the protection layer is Ni. Pulsed laser deposition film plating is adopted, and deposition of the double-layer structured thin film getter containing the protection layer and the getter layer on texture monocrystalline silicon is carried out. The texture substrate is capable of increasing effective area of the getter thin film, and so that inspiratory flow rate and inspiratory capacity are increased. The surface of the getter layer is plated with a Ni protection layer; Ni is capable of realizing dissociation of hydrogen, and increasing absorption amount of hydrogen; and the Ni protection layer is capable of inhibiting absorption of oxygen and reducing activation temperature. Activation of the Zr-Co-Re thin film getter can be realized in roasting processes at a temperature of 180 to 350 DEG C; after roasting, the Zr-Co-Re thin film getter possesses excellent inspiration performance at room temperature, can be used for internal gas residue removing of high vacuum microelectronic devices.

The invention discloses a method for detecting microdefects of quasi monocrystalline silicon sheets. The method includes a manually and mechanically polishing step of manually and mechanically polishing aquasi monocrystalline silicon sheet to be etched and flushing the quasi monocrystalline silicon sheet with deionized water; a chemical etch polishing step of chemically etching and polishing the silicon sheet subjected to the mechanical polishing and rinsing the silicon sheet with deionized water; a preferential microdefect etching step of carrying out preferential microdefect etching on the silicon sheet subjected to the chemically etching and polishing, rinsing the silicon sheet with deionized water and drying the silicon sheet in a baking oven; and a microdefect observation process of carrying out minority carrier lifetime and iron-boron opposite scanning for the etched silicon chip, observing the minority carrier lifetime scanning color distribution by a metallographic microscope, accurately positioning the microdefect positions, classifying the defect types, positioning and cutting the silicon chip into pieces, and marking the pieces. The method is rapid, accurate, energy-saving, environmental-friendly, pollution-free and highly practical.

The invention relates to a corrosive liquid used for monocrystal line silicon matte preparation and a use method thereof. The components of the corrosive liquid are 1-5% (mass ratio) of NaOH or KOH aqueous solution, 1-50mg/L sodium dodecyl sulfate and 0-6% (mass ratio) of sodium silicate. Monocrystal line silicon slice is immerged in the corrosive liquid when preparing the matte and corroded for 10-60 minutes at the temperature of 70-95 DEG C, and the matte is obtained. The method of the invention is simple, inexpensive and stable and is applicable to mass industrialization.

The present invention relates to cantilever structure manufactured based on the anisotropic silicon etching and its making process, and belongs to the field of microelectronic mechanical system. The present invention features that the cantilever has pentagonal cross section, upper surface of (100) monocrystalline silicon face and lower surface of two (111) monocrystalline silicon faces. The cantilever structure is manufactured through anisotropic etching with the (111) faces as the automatic etching terminating face, and may be controlled precisely to result in high product quality. The present invention may be used in several MEMS devices, such as capacitance type acceleration sensor, resistance type acceleration sensor, micro mechanical gyro, etc for raised device manufacturing control level and device quality.

The invention provides a capacitance micro-machining ultrasonic sensor for measuring density and a production method thereof. The capacitance micro-machining ultrasonic sensor comprises a monocrystalline silicon substrate, a cavity formed by corrosion arranged on the monocrystalline silicon substrate, a first silica thin layer arranged on the upper end surface of the monocrystalline silicon substrate and sealing the cavity, a metal electrode layer formed by sputtering on the silica thin layer, and a silicon nitride thin layer and a second silica thin layer formed by successively etching on the metal electrode layer. The sensor disclosed herein has the characteristics of insulation, corrosion resistance and high temperature resistance, and can guarantee the reliability of CMUT in different measurement environments and the measurement precision.