2438 results about "Monocrystalline silicon" patented technology

The invention provides a remote monitoring and fault diagnosis method for a distributed photovoltaic power generation system, and the method comprises the steps: obtaining the real-time power generation data of a polycrystalline silicon photovoltaic module and a monocrystalline silicon photovoltaic module in the distributed photovoltaic power generation system, and extracting key parameters reflecting the power generation characteristics of different types of photovoltaic modules from the real-time power generation data, establishing a plurality of power generation characteristic models comprising a photovoltaic module layout mode and an array connection topology, wherein the power generation characteristic models are used for describing current and voltage characteristics of the photovoltaic modules under different working conditions; the method comprises the following steps: continuously tracking subsequent power generation current, voltage and power of an abnormal photovoltaic module, optimizing an abnormality diagnosis model, applying the optimized model to other distributed photovoltaic power stations adopting the same photovoltaic module model and array connection topology, and determining model parameters in combination with influences of different geographic positions and environmental conditions.

The invention relates to a back contact solar cell and a preparation method thereof. The back contact solar cell comprises a monocrystalline silicon substrate, a tunneling oxide layer, a first doping type polycrystalline silicon layer, a second doping type polycrystalline silicon layer, an intrinsic amorphous silicon layer, a first electrode and a second electrode. The tunneling oxide layer is arranged on the first side of the monocrystalline silicon substrate, the first doping type polycrystalline silicon layer, the second doping type polycrystalline silicon layer and the intrinsic amorphous silicon layer are respectively arranged on the tunneling oxide layer, and the intrinsic amorphous silicon layer is arranged between the first doping type polycrystalline silicon layer and the second doping type polycrystalline silicon layer. The back contact solar cell is provided with an isolation groove, and the isolation groove divides the intrinsic amorphous silicon layer into a first part connected to the first doping type polycrystalline silicon layer and a second part connected to the second doping type polycrystalline silicon layer. According to the back contact solar cell, the interface defect of the monocrystalline silicon substrate at the back contact solar cell is overcome, and the insulation of two different doping types of media is realized.

The invention relates to a monocrystalline silicon thermal field multi-section dynamic cooperative heating control method and system, and the method comprises the following steps: constructing a thermal field multi-section temperature coupling model, dividing a thermal field into n axial heating sections, and building a dynamic relation between power input and temperature gradient; a deep reinforcement learning agent is designed, the state space of the deep reinforcement learning agent integrates the temperature of each heating section, the crystal lifting speed, the crucible lifting speed and the temperature gradient, and the action space outputs the power adjusting quantity of each heating section; defining a multi-target reward function, and jointly optimizing temperature gradient tracking, total power change and crucible bottom safety threshold; training the intelligent agent offline based on the thermal field model, and optimizing the strategy network; an intelligent agent is deployed online, and a power adjusting instruction is generated in real time; the control strategy is dynamically corrected, and online fine adjustment is performed through setting trigger adjustment. According to the method, the defects of a traditional method in the aspects of temperature gradient control precision, energy consumption economy and abnormal working condition self-adaptability are overcome, and the growth quality and efficiency of monocrystalline silicon are remarkably improved.

The invention discloses an optimized molecular dynamics simulation method for a monocrystalline silicon cutting process. Comprising the following steps: initializing and setting parameters, creating a workpiece area, creating an abrasive particle area, creating an atomic box, setting atomic mass, fixing a boundary layer, selecting a potential function, carrying out energy minimization processing and relaxation processing, setting cutting parameters, and carrying out operation simulation and result visualization processing. According to the method, interaction between silicon atoms and interaction between silicon and carbon can be described more accurately by using Tersoft potential; the simulation stability is improved by setting time step length, temperature control and energy minimization; by defining different temperature control layers such as a constant temperature layer and a Newton layer, complex dynamic behaviors in the material cutting process can be better simulated; by optimizing a calculation model and an algorithm, the speed and the precision of atomic motion trail and stress distribution in the process of simulating the cutting of the monocrystalline silicon are remarkably improved, and the stability of the simulation process is ensured.

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

The invention discloses a back contact battery and a photovoltaic module, relates to the technical field of photovoltaic, and aims to improve the manufacturing efficiency of the back contact battery, increase the manufacturing capacity of the back contact battery and reduce the electric leakage risk of the battery. The back contact battery comprises a semiconductor substrate, a first doped silicon layer and a second doped silicon layer. The semiconductor substrate comprises a first surface and a second surface which are opposite. The first surface is provided with a first area and a second area which are distributed at an interval, and an interval area positioned between the first area and the second area; the area ratio of the first region in the first surface is greater than or equal to 50% and less than or equal to 60%. A first doped silicon layer is disposed on the first region. The material of the first doped silicon layer comprises polycrystalline silicon and / or monocrystalline silicon. A second doped silicon layer is disposed on the second region. The conductive type of the second doped silicon layer is opposite to that of the first doped silicon layer. The extinction coefficient corresponding to the first doped silicon layer is larger than the extinction coefficient corresponding to the second doped silicon layer.

The present invention provides a single crystal furnace and a single crystal silicon rod annealing method, the single crystal furnace comprises: a main chamber comprising a furnace body and a throat structure located above the furnace body which are connected with each other, and the furnace body is used for forming a single crystal silicon rod; the auxiliary chamber is mounted above the throat structure; the flow guide cover is arranged in the main chamber and located at the throat structure, the flow guide cover comprises a cover body, and the cover body is provided with a middle flow channel allowing the silicon single crystal rod to penetrate through and an annular flow channel surrounding the middle flow channel; the throat structure is provided with an inlet which is communicated with an inlet of the annular flow channel so as to introduce a first fluid into the annular flow channel; an inlet of the middle flow channel is communicated with the auxiliary chamber so as to receive a second fluid introduced from the auxiliary chamber; and an outlet of the annular flow channel is communicated with an outlet of the middle flow channel, so that the first fluid and the second fluid are converged to cool the monocrystalline silicon rod, and the problem that the minority carrier lifetime of monocrystalline silicon is easily shortened by a monocrystalline silicon annealing process in the prior art is solved.

The invention provides a method for growing an oversized diamond polycrystalline film. The method comprises the following steps: S1, cleaning and drying a monocrystalline silicon wafer at room temperature; s2, carrying out pretreatment seed crystal on the monocrystalline silicon wafer, covering a diamond nanocrystalline layer on the silicon surface, and putting the monocrystalline silicon wafer into MPCVD (Microwave Plasma Chemical Vapor Deposition) equipment; s3, the cavity is vacuumized, then hydrogen is introduced for purging, and then vacuumizing is conducted again; then hydrogen is introduced, the air pressure is regulated and controlled to be 5-8 torr, and starting is started to ignite the plasma; s4, the microwave power is increased to 70 KW to 75 KW at the speed of 4.5 KW / min to 5.5 KW / min, the air pressure is increased to 165 torr to 180 torr at the speed of 10 torr / min to 30 torr / min, and the temperature is increased to 900 DEG C to 950 DEG C at the speed of 60 DEG C / min; s5, introducing growth gas, wherein the flow rate of hydrogen is 5000-6000 sccm, the flow rate of methane is 100-150 sccm, the flow rate of oxygen is 5-8 sccm, the flow rate of nitrogen is 1-2 sccm, and the flow rate of argon is 800-1000 sccm; and S6, after the growth is finished, cooling at a rate of 30 DEG C / min, and introducing nitrogen into the cavity for vacuum breaking until the temperature is reduced to room temperature, so as to obtain the oversized diamond polycrystalline film. The size of the oversized diamond polycrystalline film reaches 12 inches.

The invention relates to the technical field of back contact solar cells, in particular to a back contact solar cell with a double-passivation structure and a preparation method thereof, and the front surface of the cell sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside; a back field region on the back surface of the back contact solar cell sequentially comprises a metal electrode, an antireflection film, a second phosphorus-doped polycrystalline silicon layer, a second tunneling oxide layer, a first phosphorus-doped polycrystalline silicon layer, a first tunneling oxide layer and an N-type monocrystalline silicon wafer from outside to inside; the emitter region sequentially comprises a metal electrode, an antireflection film, a transparent conductive film, a boron-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an N-type monocrystalline silicon wafer from outside to inside; the isolation area sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside. A P-type TOPCon structure of an emitter region of the TBC battery is optimized into an intrinsic amorphous silicon + P-type amorphous silicon passivation structure with better passivation performance and contact performance, and the conversion efficiency is improved.

The invention relates to the field of crystal preparation, in particular to a production device and a preparation method of monocrystalline silicon, the monocrystalline silicon and an insulated gate bipolar transistor. The apparatus for producing monocrystalline silicon comprises: a crucible for placing and melting a raw material; the heating module is arranged around the crucible and comprises a fixed heater at the upper part and a movable heater at the lower part, and the movable heater moves along the lifting direction of the crystal bar so as to accurately control the crystal growth temperature gradient and the oxygen diffusion transmission mode at different stages of crystal growth; and the magnetic field module is used for applying an asymmetric hook-shaped magnetic field in the crystal growth process so as to inhibit convection of raw materials in the crucible, reduce the oxygen concentration and improve the radial uniformity of oxygen. According to the technical scheme, on the basis of 300mm N-type monocrystalline silicon, under low oxygen (lt; 5ppma), ROGlt; and on the basis of 10%, the target of low potential type defect density can also be achieved, so that the high-quality requirements, including ultralow oxygen content, low defect density and the like, of an IGBT (Insulated Gate Bipolar Translator) on a silicon single crystal substrate are met. The efficient preparation of the ultralow-oxygen N-type silicon single crystal is realized by combining a heater with a novel structure with a CUSP magnetic field technology and matching with crystal pulling process parameter optimization. According to the silicon single crystal prepared by the method, the performance and the reliability of an IGBT (Insulated Gate Bipolar Translator) can be remarkably improved, the production cost is reduced, and the requirements of modern power electronic devices on high-performance silicon-based materials are met.

The invention relates to the technical field of polishing solutions, in particular to an efficient and environment-friendly chemical polishing solution and a preparation method thereof. The chemical polishing solution comprises the following raw materials in percentage by weight: 5%-8% of a nano metal abrasive, 2%-4% of a silicon oxide abrasive, 2%-10% of an oxidizing agent, 1%-5% of a complexing agent, 0.05%-0.5% of a corrosion inhibitor and the balance of deionized water. The chemical polishing solution further comprises a pH regulator, and the pH of the chemical polishing solution is regulated to 7.5-8.5 by adopting the pH regulator. The chemical polishing solution disclosed by the invention adopts environment-friendly raw materials, shows a good polishing effect when being used for precision machining of the monocrystalline silicon wafer, and is high in material removal efficiency, and the polished silicon wafer is smooth in surface and free of damage.

The invention provides a process for preparing a silicon single crystal rod by a multi-feeding and multi-pulling method. The invention provides a process for preparing monocrystalline silicon by a multi-feeding and multi-pulling method for quantitatively compensating volatile doping elements in a re-feeding stage, which is a method for measuring and calculating the concentration of a volatile doping agent in a residual silicon melt in the re-feeding stage of the multi-feeding and multi-pulling method. Therefore, the purposes of accurately compensating the concentration of the volatile dopant and guaranteeing the quality consistency between crystal bars are achieved. According to the method, the concentration of the volatile dopant in the residual silicon melt in the re-feeding stage can be accurately measured under the condition that a crystal pulling furnace platform is not changed at all; the compensation amount of the volatile dopant in the re-feeding stage can be accurately obtained, and the stable quality of the crystal bar is ensured; meanwhile, auxiliary equipment is not needed, the method is low in cost, good in economical efficiency, suitable for various volatile dopants, wide in application range and suitable for an existing technology for preparing monocrystalline silicon through a multiple-feeding and multiple-pulling method, the technology does not need to be changed, and the production efficiency is high.

The invention discloses a phosphorus-antimony co-doped monocrystalline silicon rod, a preparation method and application, in the phosphorus-antimony co-doped monocrystalline silicon rod, the antimony element concentration is 2.3 * 10 < 16 > atoms / cm < 3 >-1.17 * 10 < 14 > atoms / cm < 3 >, and the phosphorus element concentration is 7.66 * 10 < 15 > atoms / cm < 3 >-3.9 * 10 < 13 > atoms / cm < 3 >. According to the embodiment of the invention, the silicon single crystal rod is doped with the phosphorus element and the antimony element at the same time, and when only the phosphorus element is doped in the silicon single crystal rod, the resistivity of the obtained silicon single crystal rod is usually high at the head and low at the tail; when only the antimony element is doped in the single crystal silicon rod, due to the fact that antimony is extremely volatile, the controllability of antimony doping in the preparation process is relatively low, and the resistivity is prone to occurrence of the conditions that the head is low and the tail is high, and therefore the difference of the resistivity of the single crystal silicon rod can be reduced through co-doping of phosphorus and antimony in the implementation mode of the application.

The invention relates to the technical field of building energy supply, and aims to solve the problem of how to efficiently utilize solar photovoltaic stored energy to supply energy to a building. According to the technical scheme, a monocrystalline silicon photovoltaic module array is laid on the roof of a building, and a lithium battery pack and an alternating-current distribution box are connected through a bidirectional energy storage converter to supply power to electric equipment of the building. The meteorological data acquisition module is used for measuring an irradiance value and a temperature value, and the load monitoring module is used for acquiring electric power. In the building energy management platform, a photovoltaic power generation prediction model generates a photovoltaic output prediction curve in combination with real-time and prediction data, a building load prediction model generates a load power demand curve according to historical and regular data, and an energy storage control decision-making model performs energy storage control according to a difference matrix between the two. A lithium battery pack charging and discharging power distribution scheme is obtained through a dynamic programming algorithm, and the bidirectional energy storage converter is controlled. The system is mainly used for realizing efficient and stable solar photovoltaic energy storage and supply of buildings.

A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The invention discloses a small tower footing alkali polishing additive suitable for high back contact of a TOPCon battery and a use method of the small tower footing alkali polishing additive, and relates to the technical field of monocrystalline silicon polishing. Comprising the following components: a corrosion catalyst, a multi-carboxyl polymer, a high-wetting defoaming agent, a surfactant, a chelating agent, a protective agent, hyperbranched polylysine, tannic acid, quinoline yellow, caffeine, 3-(N-morpholinyl)-2-sodium hydroxypropanesulfonate and deionized water. The alkali polishing additive is good in polishing effect under the condition of low weight loss, a relatively rough small-size tower footing can be formed on the back face of a silicon wafer after alkali polishing, and the cell conversion efficiency is gained.

The invention provides a TOPCon solar cell and a preparation method thereof, and relates to the technical field of cells, a sample is oxidized before aluminum oxide is deposited on the front side of a silicon wafer, so that silicon oxide layers with high quality are formed on the surface of a doped polycrystalline silicon layer and the surface of a boron-doped monocrystalline silicon layer; the aluminum oxide negative charge density and the silicon-hydrogen bond concentration on the surface of the TOPCon solar cell are increased, so that the stability of an aluminum oxide and silicon nitride laminated layer on the light receiving surface of the TOPCon solar cell under ultraviolet irradiation is improved, and the purpose of reducing ultraviolet induced degradation of the TOPCon cell is achieved.

The invention discloses a weak-rigidity free-form surface monocrystalline silicon reflecting lens and a processing method thereof. The method comprises the following steps: obtaining a monocrystalline silicon block; cutting into blocks; diamond wire cutting; precisely grinding the back surface; performing slicing; the free-form surface sucker adsorbs the lens; precisely grinding the front surface into a cylindrical surface; polishing the magnetorheological elastomer; releasing the lens; the cylindrical sucker adsorbs the lens; precisely grinding and thinning the back surface; releasing the lens; cutting edges and carrying out wet etching on the back surface; and carrying out ion beam modification processing to achieve the final surface shape precision of the free-form surface. According to the X-ray reflecting lens machining method, the free-form surface weak-rigidity reflecting mirror is clamped and deformed into the cylindrical surface for machining, the whole process is ultra-precision grinding and polishing of the cylindrical surface, the machining method is simple and mature, the manufacturing cost is extremely low, dependence on an ultra-high-precision multi-axis linkage machine tool is completely eliminated, and the machining precision is greatly improved. And the machining efficiency is greatly improved, and the method is suitable for mass production of reflectors.

The invention relates to an integrated carbon / carbon composite material crucible containing an yttrium oxide coating, and belongs to the technical field of thermal field parts for monocrystalline silicon. The crucible comprises a carbon / carbon composite material crucible body, a glassy carbon coating and an yttrium oxide coating, the glassy carbon coating can effectively relieve thermal mismatch between the yttrium oxide coating and the carbon / carbon composite material crucible body, and carbon in the carbon / carbon composite material crucible body can be effectively prevented from escaping; impurities are not introduced into the yttrium oxide coating in the silicon melting process, so that the purity of a silicon material can be effectively ensured, and the yttrium oxide coating has excellent silicon erosion resistance and high-temperature stability; the carbon / carbon composite material crucible body is formed by densifying a carbon fiber prefabricated body which is formed by needling and laying a pure net tire for spraying resin, and the inner surface of the carbon / carbon composite material crucible body is a net tire which is wholly approximately isotropic, so that the overall mechanical strength of the crucible can be ensured, and a good combination effect with a subsequent functional coating can be ensured; and the service life of the crucible can be prolonged.

The automatic ash removal equipment comprises a furnace body, a furnace bottom plate is arranged below the furnace body, a waste discharge port used for discharging dust or waste gas in the furnace body is formed in the furnace bottom plate, an ash removal device is arranged on one side of the waste discharge port, and an ash removal device is arranged on the other side of the waste discharge port. The ash removal device partially extends into the waste discharge port to automatically clean accumulated ash on the inner wall during ash removal, and after ash removal is completed, the ash removal device is separated from the waste discharge port, so that dust or waste gas can be discharged from the waste discharge port. When the ash cleaning device of the automatic ash cleaning equipment is used for cleaning ash, the ash cleaning device can extend into the waste discharge port to automatically clean accumulated ash on the inner wall of the waste discharge port on the furnace bottom plate, so that the influence on the growth quality of monocrystalline silicon and the environment in the furnace chamber due to blockage caused by dust accumulation on the inner wall of the waste discharge port is avoided; and after dust removal is completed, the dust can be separated from the waste discharge port, so that the dust removal effect of the dust removal device is prevented from being influenced by dust accumulation at the waste discharge port for a long time.

A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

The invention relates to the technical field of clean energy power generation, in particular to power generation equipment based on wind, light and heat multi-energy coupling. The power generation equipment comprises a vertical axis wind power generation and heat dissipation device, a photovoltaic and temperature difference power generation composite device, a double-axis tracking device and a tower type supporting frame. The vertical axis wind power generation and heat dissipation device captures wind energy through the impeller assembly so as to drive the driving assembly and drive the heat dissipation assembly to rotate at a high speed, and active heat dissipation is provided for the photovoltaic and thermoelectric power generation composite device. The photovoltaic and thermoelectric power generation composite device comprises a monocrystalline silicon photovoltaic cell, a first annular plate, a second annular plate and a plurality of aluminum extrusion type cooling fins, light energy can be effectively utilized, and waste heat collection and thermoelectric power generation are achieved. According to the power generation equipment, structural support is provided by the tower type supporting frame, and the comprehensive utilization efficiency of energy in unit space is remarkably improved through coupling utilization of wind energy, light energy and heat energy.

The invention provides a silicon single crystal rod resistance control method, a silicon single crystal rod, a silicon wafer and a solar cell. The control method comprises the following steps: obtaining phosphorus concentration and antimony concentration in a compound feed; obtaining the phosphorus concentration and the antimony concentration in the residual material in the crucible; calculating the concentration of phosphorus in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the phosphorus concentration in the re-fed material and the residual material in the crucible, and calculating the concentration of antimony in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the antimony concentration in the re-fed material and the residual material in the crucible; calculating phosphorus demand concentration according to the phosphorus concentration ratio, and calculating antimony demand concentration according to the antimony concentration ratio; calculating the doping amount of the phosphorus master alloy according to the phosphorus demanded concentration, the total weight of the full pot of the current feeding section and the concentration of the phosphorus master alloy, and calculating the antimony doping amount according to the antimony demanded concentration and the total weight of the full pot of the current feeding section. According to the control method provided by the invention, the doping amount of the phosphorus master alloy and the antimony can be accurately calculated, so that the accurate control on the resistance of the silicon single crystal rod is realized, and the silicon single crystal rod and the silicon wafer have excellent resistance uniformity.

The invention provides a single crystal furnace and a monocrystalline silicon preparation method, and belongs to the technical field of semiconductors. The single crystal furnace comprises a furnace body; the graphite crucible is positioned in the furnace body; the quartz crucible is positioned in the graphite crucible and is used for containing a multi-silicon crystal material to be molten; the cylindrical side heater is coaxial with the furnace body and is arranged on the outer side of the graphite crucible in a sleeving manner; the bottom heater is arranged at the bottom of the graphite crucible; the guide cylinder is positioned above the quartz crucible; the controller is connected with the side heater and the bottom heater through electrodes and used for controlling power output to the side heater and the bottom heater. According to the invention, a uniform and controllable thermal environment can be provided, the yield of the silicon single crystal rod is improved, and the quality of the drawn silicon single crystal rod is ensured.

The invention discloses a multi-energy coordination and monitoring platform for offshore oil and gas development, which relates to the technical field of multi-energy coordination and comprises a floating platform main body, and a solar power generation array (1), a sub power generation system (2), a main power generation system (3) and a water turbine cross beam (4) which are positioned on the floating platform main body, the floating platform main body adopts a hexagonal modular structure; the solar power generation array (1) comprises a plurality of monocrystalline silicon photovoltaic panels which are uniformly distributed on the floating platform main body; the sub power generation systems (2) are positioned at six vertexes of the floating platform main body; the main power generation system (3) is located in the center of the floating type platform body. And the water turbine cross beams (4) are uniformly distributed on the periphery of the floating platform main body. By comprehensively utilizing renewable energy sources such as solar energy, wind energy, wave energy and ocean current energy, stable and sustainable energy supply can be provided for the offshore oil and gas platform, and various pain points of a traditional energy supply mode are overcome.

The utility model discloses a conveying device for cleaning leftover materials, and relates to the technical field of monocrystalline silicon leftover material processing equipment. Comprising more than one cleaning and conveying unit; the cleaning and conveying units are communicated side by side; the cleaning conveying units located at the head end and the tail end are provided with a feeding port and a discharging port correspondingly. The leftover materials are cleaned once when passing through one cleaning and conveying unit; the cleaning and conveying units are used for conveying leftover materials through a conveying chain; a conveying roller assembly is movably arranged on the inner side of the conveying chain; material shifting rods are fixed to the conveying chain at intervals. The shifting rod shifts the edge leather along the conveying roller assembly to move along the surface of the conveying roller assembly; by means of the device, continuous operation is formed, meanwhile, the cleaning time is shortened through the cleaning mode of physical friction and spraying, secondary pollution is avoided, and meanwhile the cleaning efficiency is improved.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention belongs to the technical field of single crystal furnaces, and particularly relates to a magnetic control Czochralski single crystal device which comprises a superconducting magnet, the superconducting magnet is arranged in the single crystal furnace; the periphery of the superconducting magnet is sleeved with a cooling unit; the cooling unit comprises two mounting ring plates arranged at the top and the bottom of the outer ring of the superconducting magnet; two annular water pipes are fixedly connected to the surfaces, close to each other, of the two mounting annular plates; a plurality of pairs of cooling pipes are arranged between the two mounting ring plates in a surrounding manner; the two ends of one cooling pipe in each pair are communicated with the two annular water pipes of the inner ring; the two ends of the other cooling pipe in each pair are communicated with the two annular water pipes of the outer ring; the flowing directions of cooling liquid in each pair of annular water pipes are opposite; the cooling liquid in each pair of cooling pipes flows relatively, and the superconducting magnet is uniformly surrounded by the plurality of pairs of cooling pipes, so that the temperature difference condition generated when the superconducting magnet is cooled is reduced, and the production quality of monocrystalline silicon is improved.