The invention discloses a super-large-scale
silicon single crystal growth method based on a high-temperature superconducting magnetic control technology, and relates to the technical field of
silicon single crystal growth, and the method comprises the following steps: setting and calibrating an initial
magnetic field intensity, and combining a gradient
graphite felt heat
conductivity coefficient function to optimize temperature
field uniformity; a dynamic
magnetic field regulation and control mechanism is introduced in the melt stage, melt
convection is inhibited through flow velocity-
magnetic field joint control, and
oxygen concentration monitoring is synchronized; a multi-
physics coupling simulation and multi-objective optimization
algorithm is adopted in the
crystal growth stage, the magnetic
field intensity, the
heating power and the
crystal pulling parameters are adjusted in real time, and the
oxygen content and the growth rate are balanced; and the
tail stress is relieved through a gradient field reduction technology, and finally, the low-defect and high-uniformity
silicon single crystal is obtained. Melt flow and temperature
field uniformity are accurately regulated and controlled through a high-temperature superconducting magnetic control technology,
dynamic monitoring and a multi-target optimization
algorithm are combined, the growth quality of silicon single crystals is remarkably improved, the defect rate and
energy consumption are reduced, and meanwhile efficient and stable production of large-size crystals is achieved.