The invention discloses high-purity
graphite for
silicon carbide crystal growth and a purification process thereof, and the purification process comprises the following steps: placing
graphite in a purification furnace, and starting vacuum at the pressure of 0.1-100 Pa; the temperature is increased to 1900-2100 DEG C, heat preservation is conducted,
mixed gas containing
chlorine gas /
argon gas is introduced during heat preservation, the
volume content ratio is (2-10): 100, a gas inlet is closed after gas introduction is conducted for 10-20 min, heat preservation is conducted for 10-20 min, then vacuum is started, the pressure is 0.1-100 Pa, and circulation is conducted for multiple times; the temperature is increased to 2100-2300 DEG C, heat preservation is carried out,
mixed gas of
chlorine-containing gas /
fluorine-containing gas /
argon is introduced during heat preservation, the
volume content ratio is (2-5): (4-10): 100, a gas inlet is closed after gas introduction is carried out for 10-20 min, the gas is kept for 10-20 min, vacuum is started, and circulation is carried out for multiple times; the temperature is increased to 2300-2500 DEG C, heat preservation is conducted,
argon is introduced during heat preservation, vacuum is started, the pressure is 1-10 KPa, and after heat preservation is finished, natural cooling is conducted to the
room temperature; the
graphite cooled to the
room temperature is ultrasonically cleaned and dried after being cleaned, the graphite material with the purity larger than or equal to 99.9999% is obtained, the
energy consumption is low, and the purification efficiency is high.