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4250 results about "Iodine" patented technology

Iodine is a chemical element with the symbol I and atomic number 53. The heaviest of the stable halogens, it exists as a lustrous, purple-black non-metallic solid at standard conditions that melts to form a deep violet liquid at 114 degrees Celsius, and boils to a violet gas at 184 degrees Celsius. The element was discovered by the French chemist Bernard Courtois in 1811. It was named two years later by Joseph Louis Gay-Lussac from this property, after the Greek ἰώδης "violet-coloured".

Process for control of the shape of the etch front in the etching of polysilicon

The present disclosure pertains to our discovery that the use of a particular combination of etchant gases results in the formation of a substantially flat etch front for polysilicon etching applications. In general, the process of the invention is useful for controlling the shape of the etch front during the etchback of polysilicon. Typically, the process comprises isotropically etching the polysilicon using a plasma produced from a plasma source gas comprising a particular combination of reactive species which selectively etch polysilicon. The plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. One preferred mixture is SF6, Cl2 and HBr. A preferred method of the invention, used to perform recess etchback of a polysilicon-filled trench in a substrate, comprises the following steps: a) providing a trench 3 formed in a semiconductor structure, wherein the structure includes a substrate 2, at least one gate dielectric layer 6 overlying a surface of the substrate, and at least one etch barrier layer 8 overlying the gate dielectric layer; b) forming a conformal dielectric film 10 overlying the etch barrier layer and the sidewall and bottom of the trench; c) filling the trench with a layer of polysilicon 12 which overlies the conformal dielectric film; and d) isotropically etching the polysilicon back to a predetermined depth within the trench using a plasma produced from the invention plasma source gas. Also disclosed herein is a method of forming a trench capacitor in a single-crystal silicon substrate, the trench capacitor including a dielectric collar and a buried strap.
Owner:APPLIED MATERIALS INC
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