258 results about "Thermoelectric materials" patented technology

The invention relates to an ionic redox couple thermoelectric cement-based composite material, the composite material comprises a cement matrix and redox couples, and the redox couples exist in pores of the cement matrix; wherein the redox pairs are K4 [Fe (CN) 6] and K3 [Fe (CN) 6], and the porosity of the cement matrix is 25%-50%. According to the invention, the migration of ions in a cement matrix is regulated and controlled by introducing the redox couple, so that a relatively high Seebeck coefficient, conductivity and power factor are achieved while good mechanical properties are maintained, and the thermoelectric conversion efficiency is remarkably improved. Besides, the composite material can drive electrode reaction through temperature difference to generate a closed current loop, stable current output is achieved, and the problem of current output of a traditional ionic thermoelectric material is solved.

The invention relates to a textured KCu7S4 thermoelectric material and a preparation method thereof, and the method comprises the steps: sequentially adding a prepared KOH aqueous solution, CuCl2. 2H2O and Na2S. 9H2O into a high-pressure kettle, and fully stirring for dissolving; dropwise adding an N2H4.H2O aqueous solution into the mixed solution, fully stirring, sealing, transferring to a microwave chemical synthesis instrument, heating, keeping stirring, and reacting at a target temperature and self-generated pressure to generate a KCu7S4 nanowire preferentially growing along a [001] crystal orientation; and after the reaction is finished and natural cooling is carried out, a product is collected through centrifugation, full cleaning and vacuum drying are carried out, and then the KCu7S4 thermoelectric material with [001] preferred orientation in the direction perpendicular to the pressure direction is obtained through spark plasma sintering. According to the method, a surfactant and an organic solvent are not used, and macro, rapid, efficient and controllable preparation of the KCu7S4 nanowire is realized through a low-temperature, low-cost and low-energy-consumption microwave-assisted hydrothermal process.

The invention belongs to the technical field of thermoelectricity, and relates to a preparation method and application of a quasi-solid thermoelectric material capable of realizing humidity stability by means of phase separation regulation, the preparation method comprises the following steps: dissolving a negatively charged hydrophilic monomer, an electrically neutral monomer, a cross-linking agent and a photoinitiator in a solvent to obtain a precursor solution, and carrying out an ultraviolet polymerization reaction to form polyelectrolyte gel; mixing the eutectic solvent with an electrolyte aqueous solution containing redox ion pairs and lithium chloride to obtain a quaternary electrolyte system; and immersing the gel into a quaternary electrolyte system, and fully replacing the internal solution through a diffusion effect to obtain the quasi-solid thermoelectric material with stable humidity. The thermoelectric material has the advantages of excellent Seebeck coefficient, good stability, high mechanical strength, large power density and the like, can supply power to wearable electronic products in an actual humidity fluctuation environment, breaks through the main bottleneck of actual application of quasi-solid ionic thermoelectric materials based on ionized water gel, and is wide in application prospect.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses an ultra-precision polishing method for a thermoelectric material. The ultra-precision polishing method comprises the steps that S1, mechanical grinding and rough polishing are conducted on a thermoelectric material block through abrasive paper; wherein the abrasive paper sequentially uses metallographic abrasive paper with the abrasive particle mesh number from small to large; s2, diamond polishing paste or polishing liquid, CeO2 polishing liquid and Al2O3 polishing paste or polishing liquid are used as grinding materials, and mechanical polishing and fine polishing are carried out on the thermoelectric material block after mechanical grinding and rough polishing on a polishing machine; and S3, an alkaline SiO2 polishing solution or a water-based diamond polishing solution is used as a polishing medium, the thermoelectric material block subjected to mechanical polishing is subjected to repeated fine polishing and mechanochemical polishing on a polishing machine, and the thermoelectric material subjected to ultra-precision polishing is obtained. The surface roughness of the thermoelectric material obtained by the method does not exceed 1nm.

The invention discloses a high-performance PbTe-PbS thermoelectric material and a charge balance doping preparation method thereof, and relates to the technical field of thermoelectric materials, Pb particles, Sb particles, Te blocks, S sheets and Ag strips are respectively weighed according to the molar ratio of 0.95: 0.033: 0.9: 0.1: 0.008 and then are loaded into a quartz tube for vacuum tube sealing, and the high-performance PbTe-PbS thermoelectric material is obtained through box-type furnace sintering, cold water quenching, box-type furnace annealing, cold water quenching and rapid hot pressing furnace sintering in sequence. The Sb, S and Ag co-doped PbTe thermoelectric material is obtained. According to the method, a Pb vacancy and an Ag gap are introduced through charge balance doping of Sb2Te3 to dynamically regulate and control chemical potential, the problems of PbS precipitation and carrier transport blocking of an n-type high-concentration doped PbTe-PbS material system are solved, the wide-temperature-range thermoelectric figure of merit of the small-bandwidth PbTe-PbS thermoelectric material is greatly improved, the process is stable and can be scaled, and technical support is provided for commercialization of PbTe-based thermoelectric devices.

The application belongs to the technical field of thermoelectric materials, and provides a preparation method of a beta-SrZrS3 thermoelectric conversion bulk material, which comprises the following steps: subjecting SrZrO3 powder to a sulfuration reaction to obtain beta-SrZrS3 powder; and subjecting the beta-SrZrS3 powder to rapid hot-press sintering to obtain the beta-SrZrS3 thermoelectric conversion bulk material. The preparation method has the advantages of low cost, simplicity and rapidness, can realize batch synthesis of SrZrS3 bulk materials, shorten the synthesis period, and obtain the beta-SrZrS3 thermoelectric conversion bulk material with pure phase, uniform composition distribution and high density. The raw material used is SrZrO3 powder which is inexpensive, non-toxic and does not require inert storage environment. The vacuum tube furnace and the rapid hot-press furnace are used, the sulfuration reaction and the hot-press sintering are used for preparation, and since the raw material, the preparation process and the target product meet the requirements of environmental friendliness, the preparation method can be directly extended to the development of the application of perovskite sulfide thermoelectric conversion, and provides a new way for the development of a new thermoelectric system.

The utility model relates to the technical field of material sorting, in particular to a semiconductor thermoelectric material sorting machine which comprises a machine frame, a control assembly is installed on the machine frame, a driving mechanism is installed on the machine frame, the driving mechanism comprises a deck plate, the deck plate is installed on the machine frame, an X-axis driving assembly is installed on the deck plate, and the X-axis driving assembly is installed on the X-axis driving assembly. The X-axis driving assembly comprises a table panel, symmetrical gratings are installed on the table panel, a plurality of feeding mechanisms are installed on the table panel, an adsorption mechanism and an upper CCD are installed at the two ends of the X-axis driving assembly respectively, a lower CCD and a material taking mechanism are installed on the table panel, the material taking mechanism comprises a material bin, and the material bin is installed on the table panel; through combination of multiple devices, products can be rapidly fed and conveyed, the products can be conveniently sorted, operation is convenient, and the efficiency is high.

The utility model discloses a large-volume concrete cooling device with additional thermoelectric materials. The large-volume concrete cooling device comprises a water pipe, a flexible joint, a thermoelectric assembly and a radiator, the multiple sections of water pipes are flexibly connected end to end through flexible joints, and water outlets and water inlets of the water pipes are communicated with an external water source to form a closed-loop water circulation path; a plurality of thermoelectric components are bonded on the outer surface of the water pipe at intervals and are connected with the radiator; the electric heating assembly is communicated with an external energy storage device. The cold end of the thermoelectric module is bonded with the aluminum pipe, and the hot end of the thermoelectric module is bonded with the copper radiator, so that real-time monitoring of the internal temperature of concrete and hydration heat power generation are synchronously realized; the thermoelectric module converts waste heat of a traditional water cooling system into electric energy through the thermoelectric power generation technology, and the problem of heat waste is solved. Meanwhile, a high-temperature area can be accurately positioned through electric signal feedback, and the crack risk is remarkably reduced.

The utility model discloses a kind of semiconductor thermoelectric material cutting device, including frame, the inside of the frame is provided with hydraulic cylinder, the telescopic end of the hydraulic cylinder is connected with bottom plate, the top of the bottom plate is fixedly connected with fixed column, the top of the fixed column is fixedly connected with clamping mechanism, the inside of the frame is provided with shell, the side of the frame is fixedly connected with scale plate. Through the above structure, some semiconductor thermoelectric materials can be solved when cutting, material loosening or offset may occur, avoid the problem that instability may occur when cutting, and avoid the problem that the quality of material cannot be guaranteed, can solve part of semiconductor thermoelectric materials when cutting, may appear the case that staff needs to measure material length by oneself, avoid the problem that semiconductor thermoelectric material after cutting may need secondary accurate cutting, and avoid the problem of cost increase that appears in secondary cutting.

The invention discloses a low-thermal-conductivity p-type liquid thermoelectric material and a preparation method thereof. The chemical formula of the low-thermal-conductivity p-type liquid thermoelectric material is Cu6GeTeS4, the low-thermal-conductivity p-type liquid thermoelectric material belongs to a cubic system and a space group, the low-thermal-conductivity p-type liquid thermoelectric material Cu6GeTeS4 forms an anion rigid framework by GeS4 tetrahedral elements isolated in unit cells and body-centered cubic Te, and Cu ions move in the framework. The p-type liquid thermoelectric material keeps a stable cubic phase at 300-873 K, and has low thermal conductivity and a high thermoelectric figure of merit; the ultra-low thermal conductivity of 0.69 to 0.57 W m <-1 > K <-1 > is realized at 300 to 873 K.

This invention discloses a method for optimizing the geometric parameters of a thermoelectric arm in a thermoelectric power generation system, relating to the field of thermoelectric power generation. The method includes: constructing a three-dimensional steady-state multiphysics coupled model of the thermoelectric power generation system; incorporating the height and cross-sectional area of ​​the thermoelectric arm as core geometric parameters to be optimized; and configuring the Seebeck coefficient, electrical conductivity, and thermal conductivity parameters corresponding to the thermoelectric material; setting boundary conditions for the model, including the target temperature at the hot end of the thermoelectric arm, the fluid velocity boundary corresponding to the cold end heat dissipation, and the system load resistance boundary, to ensure the model remains consistent with the actual working scenario. This invention improves model adaptation accuracy by constructing a multiphysics coupled model that fits the actual working conditions and dynamically adjusting material-related parameters. Combined with a parameterized scanning strategy with dynamic step sizes, it improves scanning efficiency while ensuring optimization effectiveness. The dual-objective optimization based on dynamic weights can flexibly adapt to different power supply requirements.

The invention provides anisotropic thermoelectric hydrogel, which is characterized in that hydrogel is used as a matrix, and a thermoelectric material is dispersed and fixed in the hydrogel matrix; the hydrogel matrix is formed by biocompatible macromolecules through a directional freezing method or a mechanical stretching method, and has an anisotropic internal microstructure oriented in a single direction. Through a directional freezing or mechanical stretching process, a microstructure oriented in a single direction is constructed in the thermoelectric hydrogel, so that the hydrogel has anisotropy of shrinkage characteristics. The two preparation methods disclosed by the invention are both based on physical crosslinking and orientation technologies, complex chemical modification or expensive equipment is not needed, and effective design of the shrinkage anisotropy of the material is realized by controlling freezing conditions (such as liquid level height and cooling direction) or stretching parameters (such as stretching ratio and cycle index); and mutual conversion between heat energy and electric energy can be realized through a thermoelectric material in the hydrogel network.

To provide a thermoelectric device for easy positioning and bonding processes and a thermoelectric stack for such device. A representative embodiment of the present invention is a thermoelectric stack comprising a thermoelectric material layer having a first surface and a second surface opposite each other and an isolation layer stacked on the first surface of the thermoelectric material layer, wherein the thermoelectric material layer has a magnetization component perpendicular to the first surface and the second surface, and the isolation layer comprises, when a second thermoelectric stack is stacked on the surface opposite to the surface on which the thermoelectric material layer is to be stacked, an insulation region that electrically insulates the thermoelectric material layer and an electrode region that electrically conducts the thermoelectric material layer. Also, a representative embodiment of the present invention is a thermoelectric device in which such thermoelectric stacks are stacked, wherein a plurality of first thermoelectric stacks in which thermoelectric material layers have positive transverse thermoelectric power and a plurality of second thermoelectric stacks in which thermoelectric material layers have negative transverse thermoelectric power are alternately brought into close contact with each other due to the magnetic force of their magnetized components, interposing their respective isolation layers, and are electrically connected by electrode regions of the isolation layers.

The application provides a power management chip high-low side driving signal timing optimization method and system. Wherein, the method collects temperature data of the power management chip under switching transient working condition by infrared thermal imaging technology, synchronously obtains three-dimensional temperature field distribution of the surface and internal junction temperature of the packaging layer; based on the spatial continuity of the temperature field, the temperature variation characteristics of the power device area are extracted, and the temperature gradient is converted into the Seebeck voltage by using the thermoelectric material embedded in the hot spot area to construct a dynamic thermoelectric feedback network; the coupling relationship between the hot carrier concentration and the driving signal phase shift is established according to the Seebeck voltage data, the disturbance of the hot carrier mobility change on the MOSFET switching delay is quantified; based on the coupling relationship, the rising / falling edge slope of the gate voltage is adjusted, the phase deviation caused by the hot carrier effect is eliminated through dynamic compensation, and the switching performance is optimized. The application improves the dynamic response accuracy of the power management chip.

The invention relates to the technical field of energy conversion, in particular to a SnSe-based homogeneous thermoelectric device and a preparation method thereof, and the preparation method comprises the following steps: S1, adopting a Bridgman method to grow an n-type SnSe-based crystal material and a p-type SnSe-based crystal material; s2, calculating an optimal single-arm size by adopting a finite element method according to the material performance parameters; s3, cutting the n-type SnSe-based crystal material and the p-type SnSe-based crystal material into single arms confirmed by simulation according to a calculation result of the S2; and S4, the single arm and the electrode plate are welded together by adopting a surface mount technology, and the SnSe-based homogeneous thermoelectric device is prepared. The method is developed on the basis that the mechanical properties of a p-type SnSe-based material (in-plane direction) and an n-type SnSe-based material (out-plane direction) are greatly different, and the room-temperature refrigerating capacity needs to be further improved, and a new thought is provided for preparing the layered thermoelectric material into a high-performance thermoelectric device.

To provide a thermoelectric conversion material capable of improving the efficiency of thermoelectric conversion.SOLUTION: A thermoelectric conversion material includes a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at% or more and 5 at% or less. In a field of view selected such that a grain boundary crosses opposite sides of the field of view to each other that is the field of view of a cross-section of the base material, distributions of the second additive element and oxygen have a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.SELECTED DRAWING: Figure 7

The utility model discloses a self-energized multi-parameter environmental monitoring system, which comprises an environmental parameter acquisition module, a main controller, a self-energized module and a wireless communication module, the self-powered module is connected with the main controller and the wireless communication module. The environmental parameter acquisition module and the wireless communication module are both in communication connection with the main controller; the self-powered module comprises a thermoelectric power generation module, an energy acquisition module and an energy management module which are connected in sequence; the thermoelectric power generation module is used for generating power by adopting a thermoelectric material through the temperature difference between the human body surface and the outside to generate weak voltage; the energy acquisition module is used for collecting weak voltage to form large voltage; the energy management module is used for charging the battery by using the collected voltage so as to supply power to the system; the environmental parameter acquisition module comprises an oxygen concentration detection unit, a temperature and humidity detection unit, a volatile organic compound concentration detection unit, a pressure intensity detection unit and a smoke concentration detection unit. The system has the advantages of comprehensive environment monitoring and the like.

The present invention provides a mass production method for novel thermoelectric elements, comprising: (a) filling a spacer portion located inside a mold portion with thermoelectric material powder so as to surround the inside and outside of the spacer portion; (b) applying pressure to the spacer portion with a punch; (c) sintering the thermoelectric material powder using spark plasma to produce a sintered body; and (d) cutting the sintered body into a predetermined size to produce a large number of thermoelectric elements.

The invention relates to a Cs3Bi2I9 single-crystal material with double heat transfer operation parameters as well as a preparation method and application thereof, and belongs to the technical field of single-crystal materials. The preparation method comprises the following steps: uniformly mixing and grinding CsI and BiI3 according to a stoichiometric ratio, transferring into a quartz tube, vacuumizing and packaging, and sequentially carrying out high-temperature melting, quenching and annealing to obtain a Cs3Bi2I9 polycrystalline cast ingot of which the density is not less than 97%; placing the Cs3Bi2I9 polycrystalline cast ingot in a sealed quartz tube, placing the sealed quartz tube in which the Cs3Bi2I9 polycrystalline cast ingot is packaged in a vertical temperature gradient furnace, melting at high temperature, and cooling to room temperature, thereby obtaining the Cs3Bi2I9 single crystal material with the double heat transfer operation mode. Compared with the prior art, the Cs3Bi2I9 single crystal material with a unique double-heat transport behavior is innovatively prepared, a new design idea is provided for regulating and controlling heat transport through a crystal chemical means, and a new path is opened up for developing an anisotropic thermoelectric material with a heat management function.

The present invention provides: a thermoelectric conversion member that makes it possible to reduce contact resistance between a MgAgSb-based thermoelectric material and an electrode; a production method for the same; and a thermoelectric conversion element.　A thermoelectric conversion member according to the present invention comprises at least: a thermoelectric conversion layer which comprises a p-type thermoelectric material that includes magnesium (Mg), silver (Ag), and antimony (Sb); and an Sb layer which is positioned on at least one end surface of the thermoelectric conversion layer. A production method for a thermoelectric conversion member according to the present invention comprises at least: forming a laminate of a raw material that includes Sb as a raw material for an Sb layer, and a p-type thermoelectric material or a raw material mixture for a p-type thermoelectric material that is obtained by mixing a raw material containing magnesium (Mg), a raw material containing silver (Ag), and a raw material containing antimony (Sb); and sintering the laminate.

The application provides a thermoelectric material, a preparation method thereof and a thermoelectric device, and the chemical formula of the thermoelectric material is Sn (1‑x‑y) Cu x La y Se, wherein 0<=x<=0.2 and 0 The thermoelectric material provided by the application is doped with lanthanum (La) and / or copper (Cu) to effectively control the polycrystalline tin selenide lattice arrangement and macroscopically, so that the thermoelectric material has high hole carrier concentration and dense crystal defects, thereby improving the ZT value of the thermoelectric material Sn (1‑x‑y) Cu x La y Se, and further improving the thermoelectric conversion efficiency of the thermoelectric material. Meanwhile, the thermoelectric material has a wide temperature range, can effectively utilize heat energy exceeding 200 DEG C, and has good application prospect.

The invention provides an N-type bismuth-antimony alloy polycrystalline thermoelectric material as well as a preparation method and application thereof. The preparation method comprises the following steps: sealing Bi and Sb in a quartz tube according to a stoichiometric ratio, and smelting to obtain an ingot material; loading the ingot into a quartz tube with a nozzle, heating and melting the ingot, spraying the ingot into a metal mold through the nozzle, and carrying out ultrafast quenching to obtain an alloy bar; and then the alloy bar is subjected to annealing treatment. According to the preparation method, the bismuth-antimony alloy is prepared by adopting an ultrafast quenching technology and combining with annealing treatment for the first time, and the N-type bismuth-antimony alloy polycrystalline thermoelectric material with highly uniform components and large grain size is obtained. According to the method, the thermodynamic characteristics of the liquid phase are reserved, the oxidation problem is avoided, and the method is very beneficial to the realization of the optimal electron and lattice transport performance, so that the industrialization of the Bi-Sb thermoelectric material becomes possible, and the Bi-Sb thermoelectric material has an opportunity to enter the market and be used for preparing high-performance thermoelectric devices.

In the present invention, a flexible thermoelectric material for use in a semiconductor device includes silver sulfide nanoparticles and poly(3,4-ethylenedioxythiophene) coated around the silver sulfide nanoparticles, the chemical formula of the silver sulfide nanoparticles being Ag x A flexible thermoelectric material and a manufacturing method thereof are disclosed, which is TeS (wherein x=3.9-4.1) and is used in semiconductor devices in the technical field of thermoelectric materials. In the present invention, poly(3,4-ethylenedioxythiophene) has delocalized π bonds, and therefore has a certain conductive ability and can be used as an organic polymer semiconductor. The manufactured silver sulfide nanoparticles have good thermoelectric performance, and the synergistic effect of electrical conductivity and thermal conductivity is achieved, thereby realizing the effect of improving thermoelectric conversion efficiency. By putting silver sulfide nanoparticles into the organic skeleton of poly(3,4-ethylenedioxythiophene), the structure becomes compact, and the electron transfer rate is improved. The flexible thermoelectric material of the present invention has high electrical conductivity and Seebeck coefficient, and therefore the power coefficient of the material is improved.

The application provides a magnesium-based thermoelectric material and a preparation method and device thereof. The preparation method comprises the following steps: placing reaction raw materials of the magnesium-based thermoelectric material into a yttria-doped zirconia crucible; sealing the yttria-doped zirconia crucible containing the reaction raw materials into a tantalum crucible; sealing the tantalum crucible obtained in the step (2) into a quartz tube; and placing the sealed quartz tube into a rocking growth furnace to perform grain growth and solidification of the magnesium-based thermoelectric material. The preparation method provided by the application can prepare a magnesium-based thermoelectric material with higher performance and large grain size through a high-temperature melting method.

The application belongs to the technical field of thermoelectric device preparation and connectors, and aims to solve the problem of Te 0.985 Sb 0.015 During the connection of thermoelectric materials and Ni electrodes, a large number of aggregated pores and segregation of doped elements Sb are generated at the interface, which seriously weakens the electrical transport performance and thermal stability at the interface. A method for improving the performance and thermal stability of Te-based thermoelectric arms by using topological dense packing is provided. A topological dense packing NiTe 2‑x , 0≤ x ≤0.9 is synthesized by a solid phase reaction method, which is introduced into the Ni and Te 0.985 Sb 0.015 between them to form a Ni / NiTe 2‑x / Te 0.985 Sb 0.015 / NiTe 2‑x / Ni gradient connection structure. The problem of a large number of aggregated pores and segregation of doped elements Sb due to the severe diffusion of Ni into Te 0.985 Sb 0.015 and reaction at the interface is successfully eliminated, and the performance and service life of the thermoelectric connector are improved.

An apparatus for creating pressure gradients in gas, includes a thermoelectric stack that includes a plurality of thin films of thermoelectric material separated by a thermal and electrical insulator, wherein each thin film, of the plurality of thin films, is in communication with a gas in which a pressure gradient is created. The apparatus further includes at least one aperture connecting two volumes of the gas at opposite sides of the thermoelectric stack, at least one electrical conductor connecting the plurality of thin films, where the at least one electrical conductor includes walls of the aperture or a separate element, and an electric current supply to supply electrical current to the plurality of thin film.

The application relates to a preparation method of a ternary alloy nanoflower and an organic hybrid composite film thereof, and belongs to the technical field of nanometer materials and functional films. BiCl3, SbCl3 and TeO2 are dissolved in ethylene glycol, NaOH and PVP K30 are added, stirring is carried out at room temperature until a clear solution is obtained, the solution is transferred to a reaction kettle, and reaction is carried out in a blast drying oven; after cooling, centrifugal washing is carried out; after drying, a Bi-Sb-Te alloy nanoflower is obtained; the Bi-Sb-Te alloy nanoflower is mixed with a PEDOT:PSS aqueous solution; a conductive enhancer is added, ultrasonic dispersion is carried out to form a uniform slurry; the slurry is deposited on the surface of a glass substrate by using a drying machine through a flow casting method; after annealing, the film is peeled off, vacuum drying is carried out, and a flexible thermoelectric composite film is formed. Through the establishment of a trinity technology of "nanoflower morphology design-in-situ interface optimization-low temperature solution process", the problems of poor flexibility of traditional thermoelectric materials, nanocomposite interface failure and unsustainable high-temperature process are solved.

This invention discloses a body-temperature power-generating fabric and its preparation method, belonging to the field of thermoelectric power generation technology. The body-temperature power-generating fabric comprises an upper layer of high thermal conductivity insulating fabric, a lower layer of high thermal conductivity insulating fabric, thermoelectric units, and an insulation layer. Conductive circuits are printed on both the upper and lower layers of high thermal conductivity insulating fabric. The thermoelectric units are arranged between the upper and lower layers and electrically connected to the conductive circuits. The insulation layer fills the area around the thermoelectric units. The preparation method includes: printing conductive circuits on the high thermal conductivity insulating fabric; arranging P-type and N-type thermoelectric materials; filling with insulation material; and assembling to obtain the body-temperature power-generating fabric. This invention organically combines textile processing technology with thermoelectric power generation technology, achieving high efficiency in body-temperature power generation while ensuring the comfort of the fabric itself. The power generation is adjustable and easy to prepare, making it suitable for mass production.