44 results about "Density of states" patented technology

The invention provides a structure design of tunnel junction in Perovskite / silicon heterojunction lamination solar battery, which relates to the field of solar batteries. A tunneling composite layer TRL with narrow band gap and high doping concentration is added at the junction of the top and bottom part of a lamination battery, and the quite small energy level difference between the conduction band and the valence band can effectively strengthen the carrier recombination at the tunneling junction. The gradient band order at the bottom battery p layer and the tunneling junction can effectivelyenhance the cavity draw-off of the bottom battery and the tunneling junction, and thereby a large amount of charge accumulation among the tunneling junction interfaces can be prevented. After the adding of the TRL having high doping concentration, the defect density of states at the tunneling junction is increased. The electronic cavity assists tunneling through defects, and the probability of recombination and tunneling can be increased. With the adoption of the heterojunction, the spectrum response of the bottom battery can be effectively enhanced, and the opening and pressing loss can be reduced. The preparation method is simple and easy to carry out.

The embodiment of the invention provides a simulation method and device for predicting lithium-ion battery material electrochemical performance and equipment. The simulation method comprises the stepsthat basic crystal structure parameters of an electrode material of a battery are acquired, and a crystal structure model of the electrode material is constructed; the crystal structure model is optimized, and optimal crystal structure parameters with minimum total energy are obtained; an optimal crystal is constructed according to the optimal crystal structure parameters; energy band calculationis performed on the optimal crystal, and an energy band, density of states and dynamic parameters of the optimal crystal are acquired; phonon spectrum calculation is performed on the optimal crystal,and thermodynamic parameters of the optimal crystal are acquired; a synthetic electrode material with the optimal crystal structure parameters is synthesized; the synthetic electrode material is adopted to construct a battery sample model, and dimension parameters of the battery are acquired; charge-discharge loop testing, battery surface temperature distribution testing and temperature rise curve testing are performed on the battery; an electrochemical-thermal coupling model of the battery is constructed; and the effectiveness of the electrochemical-thermal coupling model is verified.

The invention discloses a biological / chemical sensor on the basis of organic thin-film transistors. The biological / chemical sensor comprises a substrate, a first gate electrode, a first gate insulating layer, source / drain electrodes, an organic semiconductor layer, a second gate insulating layer, a second gate electrode, a sensitive film and encapsulation layers which are sequentially laminated on one another from bottom to top. A bottom gate transistor which is arranged at the bottom of the biological / chemical sensor is formed by the first gate electrode, the first gate insulating layer, the source / drain electrodes and the organic semiconductor layer and is used as a reference device, a top gate transistor which is arranged on the top of the biological / chemical sensor is formed by the source / drain electrodes, the organic semiconductor layer, the second gate insulating layer and the second gate electrode and is used as a sensitive device, the organic thin-film transistors which are of low-voltage double-gate structures are formed by the top gate transistor and the bottom gate transistor, the top gate transistor and the bottom gate transistor have gate capacitance values which are greatly different from one another, and the organic semiconductor layer has low sub-gap density of states. The biological / chemical sensor has the advantages of low working voltage and cost, high sensitivity, detection target diversity and the like. Besides, the biological / chemical sensor is compatible to large-area high-speed printing / coating preparation processes, can be used for manufacturing wearable or mobile sensors and has a broad application prospect in the field of health monitoring and healthcare medical treatment.

A variable semiconductor all-optical buffer and method of fabrication is provided where buffering is achieved by slowing down the optical signal using a control light source to vary the dispersion characteristic of the medium based on electromagnetically induced transparency (EIT). Photonic bandgap engineering in conjunction with strained quantum wells (QWs) and quantum dots (QDs) achieves room temperature operation of EIT. Photonic crystals are used to sharpen the spectral linewidths in a quantum well structure due to its density of states and in a quantum-dot structure caused by the inhomogeneity of the dot size, typically observed in state-of-the-art QD materials. The configuration facilitates monolithic integration of an optical buffer with an amplifier and control laser to provide advantages over other material systems as candidates for optical buffers.

A method of predicting photostability of coatings with various dopants on titanium dioxide pigment particles is disclosed. Calculations of the density of states show that a doped coating which reduces the density of states near the band edge or increases the density of states within the band gap of the pigment particles increases the photostability of the doped pigment.

An optical amplifier having a uniform gain profile uses a photonic crystal to tune the density-of-states of a gain medium so as to modify the light emission rate between atomic states. The density-of-states of the gain medium is tuned by selecting the size, shape, dielectric constant, and spacing of a plurality of microcavity defects in the photonic crystal. The optical amplifier is particularly useful for the regeneration of DWDM signals in long optical fibers.

The invention belongs to the micro nano manufacture technical field, and discloses a full-inorganic perovskite solar energy cell comprising a substrate glass, an ITO conductive layer and a photoanode, a luminous absorption layer and a carbon counter electrode layer; the photoanode is a CdS nanorod array structure having aperture structures; the luminous absorption layer is a CsPbBr3 inorganic perovskite layer embedded in the aperture structures of the photoanode, thus tightly contacting with the photoanode; the carbon counter electrode layer is paved on the top surface of the ITO conductive layer and the top surface of the luminous absorption layer, and formed by screen printing films. The contact areas between the perovskite layer and an electron transmission layer can be obviously improved, thus increasing the charge transmission channels; UV ozone processing is carried out for the grown CdS nanorod array, thus obviously improving the CdS film interface characteristics, reducing crystal grain boundaries, reducing electron defect density of states, reducing unfavorable charge recombination, and improving the electron transmission characteristics.

The invention describes a detection device that comprise nanostructures and which detection mechanism is based on the quantum confinement effects. The analyte species are sensed by measuring charge or / and energy transfer between the species and the nanostructures, which will be proportional to the overlap between the density of states distribution in the nanostructures and the density of states distribution in the targeted analyte species.

A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.

A method of radiative cooling of optoelectronic devices using a hyperbolic metamaterial TIM layer below the heat generating optoelectronics is disclosed. Optoelectronic devices are optimized for high radiative heat conductance due to broad hyperbolic frequency band in the Long-Wavelength Infrared (LWIR) range with an efficient electromagnetic black hole thermal interface between the metamaterial TIM layer and a metallic heat sink. A modified Stefan-Boltzmann law in the hyperbolic metamaterial layer enables domination of the radiative heat transfer in the TIM layer. The broadband divergence of the photonic density of states in hyperbolic metamaterials leads to an increase in radiative heat transfer, beyond the limit set by the Stefan-Boltzmann law. The resulting radiative thermal hyper-conductivity approach or even exceed heat conductivity via electrons and phonons in regular solids.

The invention discloses a TVS device chip in the technical field of TVS devices. The TVS device chip comprises a package casing, a TVS chip layer, an overcurrent chip layer, a first pin and a second pin. The inner cavity of the package casing is provided with the TVS chip layer and the overcurrent chip layer, the bottom of the TVS chip layer is connected to one end of the first pin by a wire, andthe top of the overcurrent chip layer is connected to one end of the second pin through a wire. Through the novel design of two chips in a TVS, one chip can satisfy a transient voltage clamp protection function, the other chip is automatically disconnected when over-current is continuous, through a high-molecular polymer in a reset over-current filler, when power-off and fault are removed, the collection temperature is reduced, the density of states is increased, the phase transition recovers, nanocrystals are reduced to a chain-like conductive path, the TVS device is restored to a normal state, therefore, the circuit is not short-circuited, and the fire of a circuit is not caused.

A method of predicting photostability of coatings with various dopants on titanium dioxide pigment particles is disclosed. Calculations of the density of states show that a doped coating which reduces the density of states near the band edge or increases the density of states within the band gap of the pigment particles increases the photostability of the doped pigment.

The invention discloses a method for calculating electric conductivity under intrinsic defect of monolayer graphene. The invention can be used to calculate the change of the structure and the electronic characteristic after the intrinsic defect occurs in the perfect graphene crystal cell structure, so as to obtain the change of the electric conductivity of the perfect graphene crystal cell. At first, that invention establishs a cell configuration model of each type of intrinsic defect of the monolayer graphene; Then the most stable unit cell constant of the defect structure is obtained by using the first principle. By comparing cell structures, static states and density of states of perfect the cell and perfect defect cells, the conductivity changes of graphene after intrinsic defects areanalyzed and deduced theoretically. The invention expands the experimental measurement based on the rigorous theoretical analysis means and is suitable for the extremely sensitive influence analysis of graphene defects on the conductivity thereof.

The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W / cm2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

A method of predicting photostability of coatings with various dopants on titanium dioxide pigment particles is disclosed. Calculations of the density of states show that a doped coating which reduces the density of states near the band edge or increases the density of states within the band gap of the pigment particles increases the photostability of the doped pigment.