1747 results about "Reverse bias" patented technology

A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.

A display device is provided, including light emitting elements, first switching transistors transmitting data signals in response to scanning signals, second switching transistors transmitting a reverse bias voltage in response to a switching signal, capacitors charging voltages based on the data signals and discharging based on the reverse bias voltage; and driving transistors, each driving a transistor connected to a driving voltage and turning on and off in response to the voltage charged in the capacitor to connect and disconnect a signal passage from the driving voltage to the light emitting element.

A trench MOSFET contains a recessed field plate (RFP) trench adjacent the gate trench. The RFP trench contains an RFP electrode insulated from the die by a dielectric layer along the walls of the RFP trench. The gate trench has a thick bottom oxide layer, and the gate and RFP trenches are preferably formed in the same processing step and are of substantially the same depth. When the MOSFET operates in the third quadrant (with the source/body-to-drain junction forward-biased), the combined effect of the RFP and gate electrodes significantly reduces in the minority carrier diffusion current and reverse-recovery charge. The RFP electrode also functions as a recessed field plates to reduce the electric field in the channel regions when the MOSFET source/body to-drain junction reverse-biased.

An organic light emitting display including a scan signal line forwarding a scan signal, a data line sending a data signal and a pixel coupled to the scan signal line and the data line, the organic light emitting diode display, wherein the pixel includes a first switching transistor transmitting a data signal from the data line in response to the scan signal of the scan signal line, a driving transistor, coupled to the first switching transistor, controlling driving current from a first power source line, a storage capacitor coupled between the driving transistor and the first power source line, an organic light emitting diode, coupled between the driving transistor and a second power source line, displaying an image with the driving current controlled by the driving transistor, an initial switching transistor, coupled between the storage capacitor and an initial power source line, initializing the storage capacitor, and a switching transistor for applying a reverse bias, coupled between the second power source line and the initial power source line, applying a reverse bias voltage to the organic light emitting diode.

A method for sensing a light emissive element in an active matrix display pixel cell further including a data line connectable to a drive element and to a first electrode of the emissive element. The data line is connected to the anode of the emissive element, and a sensing voltage to reverse bias the emissive element, and detecting any leakage current flowing through the emissive element.

A method of repairing a light-emitting device capable of performing high quality image display even if pinholes are formed when forming an organic compound layer is provided. Device contamination can be prevented during repair. By applying a reverse bias voltage to an organic light emitting element during fixed periods of time, the electric current flowing in the EL element during application of the reverse bias voltage is reduced. Further, by forming a cathode so as to contain as little as possible of the high mobility ions Li and Na, contamination of the device when the reverse bias is applied can be prevented. It is preferable to use AlMg and MgAg for this type of cathode.

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

An optical communications transceiver includes an LED coupled in series with a resistor. A microprocessor has one I/O pin connected to the LED. In a first mode or transmit mode, the LED is periodically driving in forward bias to emit light to transmit data. In a second or receive mode, the LED is periodically not driven in reverse bias, e.g., reverse bias or zero bias. Then, the LED is allowed to change charge of the capacitance of the LED's junction using a photo-current. The change in charge is measured using a timer. When the change in charge exceeds a predetermined threshold, input light is sensed. Thus, the LED can be used to receive data in the second mode.

A semiconductor power device includes trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an insulation layer covering the trenched semiconductor power device with a source-body contact trench opened therethrough the source and body regions and extending into an epitaxial layer below the body regions and filled with contact metal plug therein. The semiconductor power device further includes an embedded Schottky diode disposed near a bottom of the source-body contact trench below the contact metal plug wherein the Schottky diode further includes a Schottky barrier layer having a barrier height for reducing a leakage current through the embedded Schottky diode during a reverse bias between the drain and the source.

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junction, wherein the ferroelectric material included in the gate stack creates, due to dipole polarization with increasing gate voltage, a positive feedback in the capacitive coupling that controls the band-to-band (BTB) tunneling at the source junction of a silicon p-i-n reversed bias structure, wherein the combined effect of BTB tunneling and ferroelectric negative capacitance offers more abrupt off-on and on-off transitions in the present proposed Ferroelectric tunnel FET than for any reported tunnel FET or any reported ferroelectric FET.

A fixed frequency continuously beam-steerable leaky-wave antenna in microstrip is disclosed. The antenna's radiating strips are loaded with identical shunt-mounted variable-reactance elements, resulting in low reverse-bias-voltage requirements. By varying the reverse-bias voltage across the variable-reactance elements, the main beam of the antenna may be scanned continuously at fixed frequency. The antenna may consist of an array of radiating strips, wherein each strip includes a variable-reactance element. Changing the element's reactance value has a similar effect as changing the length of the radiating strips. This is accompanied by a change in the phase velocity of the electromagnetic wave traveling along the antenna, and results in continuous fixed-frequency main-beam steering. Alternatively, the antenna may consist of two long radiating strips separated by a small gap, wherein identical variable-reactance elements are mounted in shunt across the gap at regular intervals. A continuous change in the reactance value has a similar effect as changing continuously the width of the radiating strips. This results in a continuous change in the phase velocity of the electromagnetic wave traveling along the antenna, thereby achieving continuous fixed-frequency main-beam steering.

An AC driven LED light string assembly is provided possessing reduced harmonic distortion and improved electrical efficiency when one or more series blocks of LED lamps is employed. In one embodiment, there is provided an LED light string employing a capacitor coupled in parallel across the light string AC input, or end connector terminals. According to another embodiment, LED light strings are to be manufactured with a substantially equal number of light strings produced with all LEDs in forward bias (anode first) and reverse bias (cathode first). This allows true randomness when large numbers of single series block LED light strings are connected in an end-to-end manner. It is possible to apply this concept to single LED lamps having two chips where one chip is powered in reverse bias to the second chip; thereby providing self-canceling harmonics within the single LED lamp.

A controller for controlling the reverse-bias voltage of an avalanche photodiode in a transceiver or receiver. The controller includes memory for storing information related to the avalanche photodiode, and analog to digital conversion circuitry for receiving an analog signal corresponding to the temperature of the avalanche photodiode, converting the received analog signal into a digital value, and storing the digital value in a predefined location within the memory. Control circuitry in the controller controls the operation of the avalanche photodiode in accordance with the digital value corresponding to the temperature of the avalanche photodiode and a temperature lookup table stored in the memory. A serial interface is provided to enable a host device to read from and write to locations within the memory. The invention is also implemented as a method for controlling the reverse-bias voltage of an avalanche photodiode in a transceiver or receiver and a method for calibrating a transceiver or receiver having an avalanche photodiode.

An alternating current light-emitting device includes a substrate, a plurality of microdie light-emitting elements formed on the substrate, a rectifying element-dedicated member formed on a surface of a portion of microdie light-emitting elements, a rectifying unit formed on the rectifying element-dedicated member and provided with at least four rectifying elements forming a Wheatstone bridge circuit, and an electrically conductive structure electrically connecting the rectifying elements and the microdie light-emitting elements. With the rectifying unit being formed on the rectifying element-dedicated member, the rectifying elements are highly tolerant of reverse bias and feature low starting forward bias. Also, the present invention provides a method for fabricating an alternating current light-emitting device.

An organic electroluminescent display supplies a reverse bias voltage to an Organic Light-Emitting Diode (OLED) for emitting light. The organic electroluminescent display additionally includes a reverse bias transistor to supply the reverse bias voltage. The reverse bias transistor is connected between an anode of the OLED and a reverse bias power supply, between the anode of the OLED and a first power line supplying a positive source voltage, or between the anode of the OLED and a data line. Furthermore, the reverse bias transistor can be connected between an initialization line and the anode of the OLED. The reverse bias voltage is supplied to the OLED before displaying an image or within a non-display period of a vertical synchronous signal, thereby enabling detection of whether or not the OLED has a defect.

The present invention provides an organic electroluminescence element driving circuit that is capable of realizing application of reverse bias without increasing power consumption and cost. The connected relationship between a power supply potential V_cc and the GRD is changed by manipulating switches. With this arrangement, application of reverse bias to an organic electroluminescence element can be realized without newly preparing additional power supplies such as a negative power supply, and the like, whereby the life of an organic electroluminescence element can be increased.

The electron beam is irradiated several times at predetermined intervals to the wafer surface on which the plugs are exposed in the course of the manufacturing process so that the pn junction is in the reverse bias state. Then, the irradiation conditions of the electron beam are changed while monitoring the charging voltage on the plug surface, and the secondary electron signals of the circuit pattern are obtained under the irradiation conditions that the charging is within a desired range, thereby evaluating the leakage property. Since the charging voltage of the pn junction is relaxed depending on the magnitude of the leakage current during the interval, the leakage property is evaluated based on the luminance signals of the voltage contrast image. By measuring the charging voltage and setting it within a desired range, the evaluation result reflects the state in the actual operation. Therefore, the accuracy is enhanced.