90 results about "Zero bias" patented technology

The present invention relates to the field of inclinometer trajectory measurement, and more particularly to a calibration and correction method for a gyro inclinometer and a gyro inclinometer. The method includes establishing a gyro inclinometer zero bias calibration model to calculate the sensor output value after eliminating the zero bias; establishing a gyro inclinometer scale calibration model to calculate the sensor output value after eliminating the sensitivity error; establishing a gyro inclinometer orthogonal model to perform orthogonal error compensation; establishing a gyro inclinometer non-coaxial model to perform sensor attitude calibration; establishing a comprehensive calibration and correction model based on the above models; and based on the comprehensive calibration and correction model, sequentially assuming the attitudes required for gyro inclinometer calibration according to a calibration and correction algorithm, obtaining sensor values ​​under multiple attitudes, calculating calibration and compensation parameters, and performing calibration and correction of the gyro inclinometer. The present invention has the effect of reducing gyro inclinometer measurement errors.

The present disclosure describes moving one phase of the TLVR topology from a primary side of the topology to a secondary side. By doing so, the secondary side phase is able to drive the TLVR secondary winding current with equal magnitude and opposite direction to the primary winding current for both transient and DC. Therefore, all the TLVR inductors see zero bias of magnetic flux in the cores under any loading conditions. With this feature, TLVR inductor size can be significantly reduced by reducing the saturation current. As another option, the inductor size can remain unchanged and the Zero-Bias TLVR can be optimized for power efficiency by increasing the inductance. With higher inductance, the voltage regulator switching frequency can be reduced accordingly to boost up the power efficiency.

The invention discloses a group III nitride two-color resolution detector, an imaging array and an imaging method. The detector comprises a substrate layer, a wide forbidden band layer, a narrow forbidden band layer, an electrode cathode and an electrode anode. The array comprises a plurality of III-nitride two-color resolution detectors which are arranged in parallel. The method comprises the steps that an optical signal enters from the top of the detector, a long wavelength component in the incident light is absorbed in a narrow forbidden band layer, a short wavelength component is sequentially absorbed in the narrow forbidden band layer and a wide forbidden band layer, and the detector works under zero bias voltage or negative bias voltage to generate a negative current signal to be output; the detector works under the positive bias voltage to generate positive current output; and collecting output current signals to obtain imaging results of two different wavelengths. According to the invention, the wavelength selection detection effect and the two-color resolution detection imaging effect can be realized by a single device without filtering. The III-nitride two-color resolution detector, the imaging array and the imaging method can be widely applied to the technical field of photoelectric detection imaging.

The invention provides a current sampling zero offset correction method and device. The current sampling zero-bias correction method comprises the following steps: determining a correction trigger opportunity, wherein the correction trigger opportunity is a moment when an output voltage vector of a power converter is in a zero vector state and a theoretical value of current flowing through a current sampling resistor is zero; sampling a current sampling channel through an analog-to-digital converter at a correction triggering time, and obtaining original sampling data under a zero current condition; processing the original sampling data to obtain a current zero current bias value and updating the stored current bias data variable; a corrected current value is determined based on the updated current bias data variable. By setting the specific correction triggering time and correction mechanism, the current sampling zero bias can be dynamically tracked and corrected online, automatically and in real time in the whole operation process of the driver, adverse effects caused by static deviation and dynamic temperature excursion are overcome, and the control precision and robustness of the system under all working conditions are improved.

An integrated configurable photodetector with an ultra-high circular polarization extinction ratio and a preparation method therefor are provided. The photodetector includes a metal reflective layer, a dielectric layer, an electrode layer, and a two-dimensional material layer. The electrode layer includes symmetrically arranged Z-shaped metallic optical antenna arrays which are respectively integrated with a source electrode and a drain electrode and have opposite chirality. The photodetector operates at zero bias state, and a photo-response is photovoltaic effect, hot electron injection, photo-thermoelectric effect and so on induced by a Schottky junction composed of the source electrode, the drain electrode and the two-dimensional material. By adjusting the distribution of the incident light in the source and drain electrode regions, under specific Circularly polarized light, photocurrents of equal magnitude but opposite directions cancel each other out, resulting in a net output of zero and significantly reducing noise.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

The invention discloses a width gradient tungsten disulfide nanobelt, a preparation method thereof and an application of the width gradient tungsten disulfide nanobelt in a self-driven photoelectric detector, a Ni film is deposited on a substrate and is annealed to form catalytic particles, and a chemical vapor deposition system is utilized to accurately control the temperature gradient between tungsten trioxide in a central temperature zone and a growth substrate in a downstream temperature zone, so that the width gradient tungsten disulfide nanobelt is obtained. And the solid sulfur source is propelled at a constant rate, the dynamic change of the sulfur / tungsten atomic ratio in the reaction environment is regulated and controlled, and a growth mode is guided to be converted from a gas-liquid-solid mechanism to a gas-solid mechanism, so that controllable preparation of the tungsten disulfide nanobelt with the width continuously and progressively decreased in the axial direction is realized. The width of the nanobelt gradually changes from 150-500 nm to 50-120 nm, the length of the nanobelt reaches 3-12 [mu] m, and the nanobelt has an armchair edge and a 3R phase stacking structure. A self-driven photoelectric detector constructed based on the nanobelt realizes high-sensitivity detection of 532 nm laser under zero bias voltage, the responsivity reaches 5.04 A / W, the detectivity reaches 3.23 * 10 < 12 > Jones, and the nanobelt shows important application value in the fields of optical signal detection, optical switches and wireless optical communication.

The invention discloses an atomic magnetometer longitudinal magnetic field interference resisting method and system based on zero offset point control, and the method comprises the steps: building a system response model containing a zero offset error, and respectively setting the zero offset points of first harmonic and second harmonic response signals as closed-loop control targets of x-axis and y-axis magnetic fields; and the output response of the double-loop closed-loop feedback control system is stabilized at a zero offset point, so that the interference of longitudinal magnetic field fluctuation on transverse magnetic field measurement is isolated in principle, and the real-time decoupling measurement of the transverse magnetic field to be measured is realized. The problem that quasi-static and dynamic longitudinal magnetic field interference cannot be suppressed at the same time in the prior art is solved, and the device has the advantages of being completely free of longitudinal magnetic field interference, biaxial decoupling measurement and long-term stable work.

This invention discloses a high-performance tin-based perovskite photodetector, its fabrication method, and its application in covert optical information transmission. The photodetector sequentially comprises a conductive substrate, an electron transport layer, a tin-based perovskite layer, a hole transport layer, and a metal electrode layer. The tin-based perovskite layer is FASnI3, and 1,4-butanediamine hydroiodate is introduced as a molecular additive to suppress Sn. 2+ Oxidation and reduction of defect state density optimize film quality. Based on this, FASnI3 perovskite films with an inverse opal structure were successfully prepared. The slow photon effect significantly enhances perovskite light absorption and promotes carrier transport, and the "lotus leaf effect" introduced by the photonic crystal significantly improves the stability of Sn-based perovskites. The photodetector prepared by this invention achieves highly sensitive, self-powered near-infrared detection under zero bias conditions, exhibiting high responsivity, high detectivity, low dark current, and excellent stability. It can be used in optical communication, information transmission, sensing, and security optoelectronic systems.

The invention discloses a noise component calculation method and device of a hemispherical resonator gyroscope. The method comprises the following steps: acquiring a test result of the zero-bias stability of the hemispherical resonator gyroscope; carrying out ALLAN variance analysis on the test result of the zero bias stability, and determining a quantization noise coefficient, an angle random walk coefficient, a zero bias instability coefficient, a rate random walk coefficient and a rate slope noise coefficient; and calculating and determining a quantization noise component, an angle random walk noise component, a zero offset instability noise component, a rate random walk noise component and a rate slope noise component according to the quantization noise coefficient, the angle random walk coefficient, the zero offset instability coefficient, the rate random walk coefficient and the rate slope noise coefficient. According to the method, contributions of different noise components in the zero offset error source of the hemispherical resonator gyroscope can be obtained, and the long-term stability and the measurement precision of the hemispherical resonator gyroscope are improved.

This invention relates to a method for amplifying the polarization ratio of a photodetector based on a two-dimensional semi-metallic material and a heterostructure, belonging to the field of photodetection technology. Based on a strategy combining a two-dimensional semi-metallic material and a heterostructure, a BP / MoS2 / WTe2 heterojunction is constructed, where BP is the light-absorbing layer, MoS2 is the barrier layer, and WTe2 is the contact layer. This invention not only achieves selective carrier transport and reduces dark current, but also allows WTe2 to reduce contact resistance and provide a fast carrier extraction channel, realizing asymmetric amplification of the photocurrent, thereby achieving active amplification of the polarization ratio even at zero bias. This invention breaks the limitation of the inherent anisotropy of materials on the magnitude of the polarization ratio, and uses a completely dry transfer process to fabricate polarization detection photodetectors, eliminating the need for additional polarization elements and chemical solution treatment. It boasts advantages such as simple process, low cost, high repeatability, and no pollution.

The application discloses a low-voltage and low-power reference voltage circuit with temperature compensation, comprising: a starting circuit connected with a power supply, used for making the reference voltage circuit deviate from the original zero bias point and enter a working state; a bias circuit, used for converting a bias current into a bias voltage of an operational amplifier circuit; the operational amplifier circuit, used for voltage clamping the voltage between two preset points in a voltage reference core circuit; the voltage reference core circuit, used for outputting a first-order temperature compensation reference voltage, and clamping the first-order temperature compensation reference voltage to another output point on the voltage reference core circuit through the operational amplifier circuit, so as to generate the bias current; and a temperature compensation circuit, used for generating a temperature compensation current, which is used for temperature compensation of the current flowing through the output end of the temperature compensation circuit. The application can meet the requirements of temperature performance, low power consumption and low power supply voltage, and can be widely applied in the field of circuit systems.

This application discloses a method and related equipment for zero-bias and amplitude calibration of a signal. The method is applied to an adaptive notch filter equipped with a low-pass filter, and includes: real-time acquisition of the signal to be measured corresponding to the rotor position detection; normalization processing of the signal to be measured to obtain a first signal; inputting the first signal into a phase-locked loop for angle tracking processing to obtain a second signal; inputting the first signal and the second signal into the adaptive notch filter to calculate the amplitude of the signal to be measured; acquiring the output signal of the low-pass filter in the adaptive notch filter, and obtaining the zero-bias value of the signal to be measured based on the output signal. This application achieves low computational cost and low storage space extraction of signal amplitude and zero-bias by adding a low-pass filter to the adaptive notch filter to filter out DC signals, while reducing the impact of noise and improving the accuracy of the results.

The invention discloses a two-dimensional ferroelectric vertical heterojunction self-powered X-ray synapse transistor and a manufacturing method thereof, and belongs to the field of X-ray synapse transistors, the two-dimensional ferroelectric vertical heterojunction self-powered X-ray synapse transistor comprises a substrate, the substrate is provided with a bottom layer, a ferroelectric functional layer and a top layer which are stacked in sequence, the bottom layer is connected with a first electrode, and the top layer is connected with a second electrode. The bottom layer and the top layer are independently made of a two-dimensional semi-metal material, the ferroelectric functional layer comprises a two-dimensional ferroelectric material, the bottom layer is not in contact with the top layer, and the work function of the bottom layer is not equal to that of the top layer. According to the invention, a built-in electric field induced by ferroelectric polarization is combined, self-powered X-ray detection under zero bias voltage is realized, synaptic enhancement or inhibition can be realized through bias voltage regulation and control if X-ray pulse is taken as a stimulation signal, and short-term or long-term synaptic plasticity can be simulated. The device is simple in preparation process and excellent in stability, can be widely applied to the fields of medical diagnosis, security check screening, radiation monitoring and intelligent sensing, and provides core technical support for a'detection-synapse 'integrated device.

The carrier concentration of the drift region (87) is controlled in the semiconductor substrate in response to a voltage applied to the gate electrode (81) of the gate-controlled diode (203). In the reverse recovery state, a voltage signal of zero bias or positive bias that causes an electron layer at the interface of the gate electrode (81) is applied between the gate electrode (81) and the anode electrode (86). In the forward recovery state, a voltage signal of negative bias that causes a hole layer at the interface of the gate electrode (81) is applied between the gate electrode (81) and the anode electrode (86). After the forward recovery state, the voltage signal of zero bias or positive bias is switched from the negative bias. The gate-controlled diode (203) variably controls the period during which the voltage signal of zero bias or positive bias is applied in accordance with the non-conduction period of the IGBT connected in series therewith.

This invention relates to the field of photoelectric detection technology, specifically to a diamond immersion detector. The invention utilizes ultra-wide bandgap boron-doped p-type diamond single crystal (PDSC) as the photoelectrode to construct a vacuum ultraviolet immersion photodetector with a PDSC-ultrapure water-Pt structure. The PDSC immersion photodetector prepared by this invention exhibits a responsivity as high as 87.8 mA / W under zero bias and 193 nm excitation wavelength conditions, which is close to the photoresponsivity shown by standard commercial Si detectors; furthermore, under low optical power excitation, the responsivity of the PDSC immersion detector can reach as high as 670 mA / W. The immersion detector of this invention is a low-cost, self-powered, and highly sensitive vacuum ultraviolet photodetector with good stability, showing promising application prospects for 193 nm power monitoring in deep ultraviolet light source lithography machines.

The application provides a piezoelectric driving self-biased very low frequency mechanical transmitting antenna and a preparation method thereof. The preparation method comprises the following steps: step one, preparing piezoelectric ceramic material; step two, cutting and slotting; step three, pouring resin; step four, cutting layer sheet; step five, packaging; step six, polarization treatment; step seven, preparing adhesive layer; and step eight, hot-pressing compounding. Compared with the existing magnetoelectric antenna, the self-biased very low frequency mechanical transmitting antenna has the characteristics of self-bias, high piezoelectricity, miniaturization, no additional noise source and electromagnetic interference, and the like, has the advantages of high stress transmission efficiency and small ohmic loss, can realize the miniaturization requirement of the magnetoelectric mechanical antenna, is easy to form a large-scale array, improves the magnetic transmitting performance under zero bias, and achieves the low frequency communication effect.

According to the technical scheme provided by the invention, a structure combining an elliptical annular structure and a comb tooth structure is provided to form a lever effect to amplify the displacement of a sensitive mode, a parasitic mode between a driving mode and the sensitive mode is eliminated, and meanwhile, the long-term and short-term zero-bias stability of the gyroscope is improved; according to the technical scheme, the symmetrical large-area sensitive mass blocks are adopted, the advantage of decoupling of a driving mode and a detection mode is achieved, and meanwhile large signal output gain is achieved; the sensitive mass block and the detection frame which are symmetrical are adopted, differential detection can be achieved, the same external interference is differentiated, and the sensitivity and the anti-interference capacity are further guaranteed; and the symmetrical structure can effectively restrain machining errors, so that the stability of the gyroscope is improved.

The application belongs to the technical field of functional crystal materials, and more particularly relates to a high-stability two-dimensional Dion-Jacobson type non-lead polar hybrid perovskite crystal and a preparation method and application thereof. The high-stability two-dimensional Dion-Jacobson type non-lead polar hybrid perovskite crystal has a chemical formula of (4AMPY)2AgBiBr8, belongs to a monoclinic system, and has a space group of P21. The crystal is prepared into an X-ray detector, which can realize efficient and stable X-ray detection under zero bias voltage and high bias voltage. The single crystal is irradiated by different X-ray irradiation doses, and the X-ray response performance thereof is tested. When the crystal is irradiated by different X-ray irradiation doses, the crystal exhibits obvious light response, and the result shows that the material has potential application value as an X-ray detection material.

According to the method, a target function of three-direction equivalent zero offset and real number deflection matrixes of the strapdown three-axis magnetometer is constructed, an overdetermined equation set related to the Euler angle of the strapdown three-axis magnetometer is constructed, the solving problem of the target function and the overdetermined equation set is converted into a constraint optimization problem, a sequential quadratic programming algorithm is adopted for solving, a telescopic factor is introduced, and the Euler angle of the strapdown three-axis magnetometer is obtained. And calculating a correction value of the magnetic gradient tensor measured by the strapdown three-axis cross magnetic array, and completing self-calibration of the strapdown three-axis cross magnetic array under the condition that the reference magnetic field is unknown. According to the method, all parameters of the strapdown three-axis cross magnetic array measurement model can be automatically and accurately calibrated under the condition that a reference magnetic field vector model is not provided, a calibration link of alignment errors does not exist, and a high-precision three-axis magnetometer or a scalar magnetometer does not need to be used for measuring the reference magnetic field vector model in the calibration process. The method does not have an iterative process and mathematical approximation, so that an iterative calculation initial value does not need to be provided, and the calibration algorithm is rapid and high in precision.

The invention discloses a position-sensitive Te nanowire photoelectric detector and a preparation method and application thereof, and belongs to the technical field of photoelectric detection and neuromorphic calculation. The invention discloses a suspended Te nanowire to minimize parasitic interference of a substrate so as to improve the collection efficiency of photon-generated carriers, and also can realize rapid thermal isolation to accurately control the temperature gradient so as to realize the photoelectric response of a wide spectrum at 1310-1650nm under a zero offset value. The position-adjustable positive and negative photoconductive characteristics generated by the Seebeck effect are utilized to show the calculation application of the device in the sensing under the zero offset value, 85% of accuracy is realized in the image identification application, and the problems that the calculation power consumption in the traditional sensing is large, the device separation degree is poor, the application in the communication wave band is difficult to realize and the like are solved. The device provides a thought for developing a low-power-consumption visual sensing system under wide spectrum response.

The application belongs to the technical field of photoelectric detectors, and discloses a preparation method of t-Se / Si and BP / t-Se / Si heterojunction photodetectors. First, a few-layer black phosphorus nanosheet dispersion liquid is prepared, then a trigonal selenium film is deposited on a silicon substrate to construct a t-Se / Si composite structure, and then black phosphorus nanosheets are spin-coated to form a BP / t-Se / Si heterojunction. Electrodes are prepared on the two structures respectively to obtain t-Se / Si and BP / t-Se / Si unit detectors with significantly different photoelectric response characteristics. The two units are arranged and integrated according to a preset pattern to form a patterned detector array. The array has wide spectral response and low dark current characteristics under zero bias, and can be used for non-contact displacement monitoring of precision instruments.

This invention discloses a gallium nitride Schottky diode with a quasi-depletion layer, the structure of which, from bottom to top, comprises: a substrate layer, a buffer layer, and an N-type diode. + -GaN contact layer, N ‑ -GaN drift layer, quasi-depletion layer, and anode Schottky contact layer disposed on the quasi-depletion layer and disposed on N + A cathode ohmic contact layer above a GaN contact layer; wherein the doping concentration and thickness of the quasi-depletion layer must satisfy the following: the thickness of the quasi-depletion layer is less than the width of the depletion layer of the diode at zero bias voltage. This invention significantly reduces the turn-on voltage of the diode by setting a highly doped quasi-depletion layer on the surface of the drift layer. With the combination of doping concentration and quasi-depletion layer thickness, the quasi-depletion layer is in a fully depleted state under zero bias voltage, while under reverse bias voltage, based on the characteristic that the quasi-depletion layer is already depleted at zero bias voltage, the reverse voltage is mainly due to the N-type cathode ohmic contact layer below. ‑ The GaN drift layer effectively reduces reverse leakage current.

The invention relates to the technical field of biomedical sensing and wearable health monitoring, and discloses a photoelectrochemical sensing microneedle, a preparation method thereof, a monitoring system and a detection method. The sensing microneedle comprises a swellable dual-network hydrogel microneedle substrate, a three-dimensional conductive network and a semiconductor nanostructure, wherein the three-dimensional conductive network is composed of high-length-diameter-ratio metal nanowires with a local surface plasma resonance effect, and the semiconductor nanostructure is compounded on the surfaces of the metal nanowires and forms a Schottky heterojunction. The mechanical constraint of the rigid polymer skeleton and the high length-diameter ratio of the metal nanowire cooperate to ensure the continuity of the conductive network in a swelling state. Under the irradiation of exciting light, hot electrons are migrated to the surface of a semiconductor through a Schottky junction built-in electric field to generate reactive oxygen free radicals, non-enzymatic catalytic oxidation is carried out on a target analyte in interstitial fluid under zero bias voltage or low bias voltage, a photocurrent signal is generated, and integration of minimally invasive sampling and in-situ high-selectivity detection is realized.

The present invention provides a self-calibration method for a fiber optic gyroscope and a fiber optic gyroscope. The self-calibration method includes applying a calibration signal to an optical phase modulator; performing time-series demodulation on a signal collected by a light detector to obtain gyro outputs in the first and second half-cycles of a calibration state; calculating a calibrated scale factor; calculating a zero-position error caused by scale factor drift and a primary calibration gyro output for scale factor calibration; calculating a secondary calibration gyro output for zero-position calibration based on the time-series demodulation result; and calculating the gyro output after the secondary calibration. A calibration state is introduced into the fiber optic gyroscope signal processing. In the calibration state, a periodic calibration signal is output and loaded onto a phase modulator to simulate the positive and negative rotational speeds of the gyroscope. The gyro zero bias and scale factor are adjusted through calibration calculations.

The invention discloses a reading head front end and a signal conditioning circuit. The reading head front end comprises a reading head front end circuit, the signal conditioning circuit and a connecting cable. Wherein the reading head front-end circuit comprises a photodiode front-end photoelectric conversion circuit and a light-emitting diode constant current source for power supply. The signal conditioning circuit comprises a quadrature phase calibration part and an FPGA digital signal processing part. A rear-end signal conditioning module completes quadrature signal zero adjustment, non-quadrature adjustment, amplitude adjustment output, zero bias automatic adjustment and phase detection functions. A photoelectric conversion circuit at the front end of a photodiode is realized through trans-impedance amplification with wide bandwidth and high gain, and acquisition of optical signals of a reading head is completed; a high-precision and high-stability constant current source power supply circuit is designed to realize high-quality output of a light source; the orthogonal phase calibration circuit can realize manual signal amplitude gain, phase adjustment range selection and phase orthogonality calibration; the FPGA digital signal processing part realizes automatic calibration of a bias level through high-speed ADC sampling and high-precision DAC output level, an FPGA obtains output signal phase information through amplitude phase discrimination, and a rear-end processing board is small in size and is integrated to a DB15 cable plug; and the connecting cable adopts a 12-core high-flexibility double-layer shielding bending-resistant cable, so that the integrity of signal transmission is ensured.

This invention relates to a method, apparatus, and device for zero-bias compensation of microelectromechanical gyroscopes (MEMS) based on temperature control, and pertains to the field of inertial sensor technology. The method includes: placing a heating chip on the back of the MEMS chip and constructing a chip-level temperature control system; adjusting the temperature to a preset desired temperature and maintaining a constant temperature state using the driving frequency as the controlled variable; collecting zero-bias output data, driving force data, and driving frequency data of the MEMS chip under constant temperature conditions as a sample set to calculate a final bivariate cubic fitting model; continuously maintaining the constant temperature state of the MEMS chip and collecting real-time driving force and driving frequency under the current operating state; then substituting these values ​​into the final bivariate cubic fitting model to calculate the zero-bias compensation value; and finally subtracting the zero-bias compensation value from the current zero-bias output result of the MEMS chip to complete the zero-bias compensation. This invention effectively suppresses the influence of temperature and operating parameters on zero-bias, improving the measurement accuracy and stability of the MEMS gyroscope.

The method comprises the following steps of: decomposing a measurement matrix of each strapdown triaxial magnetometer into a unit orthogonal matrix and a symmetric positive definite matrix by utilizing the characteristic that a magnetic field modulus is independent of the unit orthogonal matrix and adopting a polar decomposition technology, and obtaining an equivalent zero offset and the symmetric positive definite matrix of each strapdown triaxial magnetometer by adopting ellipsoid equation iteration linear least square fitting; a virtual coordinate system is introduced, a vector modulus value correction value of measurement data of each strapdown triaxial magnetometer is calculated, a correction value of a magnetic field horizontal modulus gradient is further obtained, and calibration of the strapdown triaxial cross magnetic array is completed. According to the method, the ellipsoid equation is solved with high precision by adopting the iterative linear least square method, the strapdown three-axis cross magnetic array does not need to be accurately rotated, high-precision calibration can be carried out under the condition of providing the geomagnetic field modulus, and the operation is simple and convenient; the iterative linear least square algorithm is simple, the calculation amount is small, and engineering implementation is easy.

The invention provides a tunneling photodiode with a bias voltage regulation and control dynamic range and a preparation method and application thereof, and belongs to the technical field of photodiodes. The diode comprises a conductive substrate, a first light absorption layer, a tunneling layer, a second light absorption layer and a metal electrode which are sequentially stacked from bottom to top, and the first light absorption layer and the second light absorption layer form an I-type energy band heterojunction. The ultra-thin tunneling layer is introduced to the I-type heterojunction interface to construct the tunneling photodiode, so that the dynamic range of the tunneling photodiode can be continuously and quickly adjusted by adjusting the external bias voltage, and the tunneling photodiode can adapt to different illumination conditions. Under positive bias voltage, the device has high gain and is suitable for strong light detection; under reverse bias, the gain of the device is reduced, the saturation effect under strong light is avoided, and the device is suitable for medium-strong light detection; under zero bias voltage, the device has extremely low dark current, the signal-to-noise ratio is optimized, the weak light detection sensitivity is improved, and the device is suitable for weak light detection, so that a high dynamic range is realized.

The application provides a MEMS gyroscope, which comprises a MEMS inertial sensing part, a gyroscope interface circuit, wherein the MEMS inertial sensing part comprises a driving capacitor group, a driving detection capacitor group and a detection capacitor group of one or more axes; the gyroscope interface circuit comprises a driving circuit, a detection circuit of one or more axes, a correction capacitor group of one or more axes and a digital processing circuit; the driving circuit comprises a driving charge amplifier, the detection circuit comprises a detection charge amplifier of one or more axes, one end of a first correction capacitor in the correction capacitor group of each axis is connected to a first output end of the driving charge amplifier, the other end is connected to a first input end of the detection charge amplifier of the corresponding axis, one end of a second correction capacitor in the correction capacitor group of each axis is connected to a second output end of the driving charge amplifier, and the other end is connected to a second input end of the detection charge amplifier of the corresponding axis. In this way, the quadrature error can be eliminated, and the gyroscope zero bias stability and noise level are improved.