1269 results about "Magnetic moment" patented technology

The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co₆₀Fe₂₀B₂₀. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

A method is provided for determining an electric conductivity of an earth formation formed of different earth layers, which earth formation is penetrated by a wellbore containing a wellbore fluid, is provided. The method includes the steps of: lowering an induction logging tool into the wellbore to a location surrounded by a selected one of the earth layers, the tool having a magnetic field transmitter effective to induce magnetic fields of different frequencies in the earth formation, and a magnetic field receiver effective to receive response magnetic fields and to provide a signal representative of each response magnetic field, at least one of the transmitter and the receiver having a plurality of magnetic dipole moments in mutually orthogonal directions. At least two of the different frequencies are selected, and for each selected frequency, the transmitter is operated so as to induce a magnetic field in the earth formation and the receiver is operated so as to provide a signal representing a response magnetic field, wherein the at least one of the transmitter and receiver is operated in the mutually orthogonal directions. The signals are combined in a manner so as to create a combined signal having a reduced dependency on the electric conductivity in the wellbore region. The formation resistivity and the relative orientation of the logging tool with respect to the formation layering is determined from the combined signal.

An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high B_sat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high B_sat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.

A method and system provide a magnetic transducer that includes an air-bearing surface (ABS). The magnetic transducer includes an underlayer and a main pole residing on the underlayer. The main pole includes a front and a rear. The front resides at the ABS, while the rear is distal from the ABS. The main pole also includes a first portion having a first magnetic moment and a second portion having a second magnetic moment. The first portion has a front face at the ABS and terminates between the ABS and the rear of the main pole. A part of the second portion resides on the first portion, while another part of the second portion resides between the first portion of the main pole and the rear of the main pole. The first magnetic moment is less than the second magnetic moment.

A magnetic shift register utilizes a data column comprising a thin wire of magnetic material. A writing element selectively changes the direction of the magnetic moment in the magnetic domains to write the data to the data column. Associated with each domain wall are large magnetic fringing fields concentrated in a very small space. These magnetic fringing fields write to and read from the magnetic shift register. When the domain wall is moved close to another magnetic material, the fringing fields change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material. A reading element similar to a tunneling junction comprises a free layer and a pinned layer of magnetic material. Fringing fields change the direction of the magnetic moment in the free layer with respect to the pinned layer, changing electrical resistance of the reading element and “reading” data stored in the magnetic shift register.

One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.

A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.

A system for magnetically imaging an operating region in a subject and magnetically navigating a medical device within the operating region includes a first magnet for applying a static magnetic field to the operating region of sufficient strength for magnetically imaging the operating region and sufficiently strong to permit a medical device to be oriented in the operating region by creating a magnetic moment at the distal end of the medical device, and a second magnet for applying a static magnetic field to the operating region of sufficient strength for magnetically imaging the operating region and sufficiently strong to permit a medical device to be oriented in the operating region by creating a magnetic moment at the distal end of the medical device. In an alternate construction, the system includes a first magnet that is movable between a first position to apply a first static magnetic field to the operating region and a second position to apply a second static magnetic field to the operating region. The method of the invention includes applying a first static magnetic field to the operating region and MR imaging and magnetically navigating a device in the first static field, and then applying a second static magnetic field to the operating region, in a different direction than the first direction, and MR imaging and magnetically navigating a device in the second static field.

A reading device reads the direction of the magnetic moment of domains in a magnetic shift register, thus reading information stored in the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to read data stored on to the magnetic shift register. The reading device reads the direction of the magnetic moment in a magnetic shift register, thus reading information stored in the domains.

A method of navigating a medical device in an operating region in a subject. The method includes applying a magnetic field to the operating region and changing the magnetic moment of the medical device by selectively changing a physical condition of at least one magnet element in the medical device to change the orientation of the device with respect to the applied magnetic field.

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

A thin dual magnetic tunnel junction head having a free layer and first and second antiparallel (AP) pinned layer structures positioned on opposite sides of the free layer, each of the AP pinned layer structures including at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers of each AP pinned layer structure being separated by an AP coupling layer. A first barrier layer is positioned between the first AP pinned layer structure and the free layer. A second barrier layer is positioned between the second AP pinned layer structure and the free layer. The head does not have any antiferromagnetic layers, and so is much thinner than dual magnetic tunnel junction sensors heretofore known. As such, dual magnetic tunnel junction heads can be fabricated at a thickness of less than about 500 Å.

A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.