The invention provides a magnetic
random access memory and a preparation method thereof. The magnetic
random access memory is applied to a comparison circuit, and comprises a magnetic
tunnel junction comprising a free layer, a
barrier layer and a reference layer which are stacked in sequence; the spin-
orbit torque layer is located on the side, away from the reference layer, of the free layer, the conductive material layer is located on the side, away from the spin-
orbit torque layer, of the magnetic
tunnel junction, and a conductive material of the conductive material layer has the following characteristics that
spontaneous magnetization capacity is achieved, and the resistance
temperature coefficient is smaller than 0; the conductive material layer comprises a first part and a second part which are arranged at an interval, the first part is in contact with the reference layer, a first input end of the comparison circuit is electrically connected with the first part, and a second input end of the comparison circuit is electrically connected with the second part. According to the invention, the technical problems that the reading window of the magnetic
tunnel junction becomes small and even the reading is wrong and the magnetic
random access memory needs to apply an auxiliary
magnetic field along the current direction to realize the deterministic overturning of the
magnetic moment are at least solved.