243results about "Liquid application" patented technology

A method and system plates CoFeX, where X is an insertion metal. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone (HPT). The plating solution being configured to provide a CoFeX film having a high saturation magnetic flux density of greater than 2.3 Tesla and not more than 3 weight percent of X. The method and system also include plating the CoFeX film on a substrate in the plating solution. In some aspects, the plated CoFeX film may be used in structures such as main poles of a magnetic recording head.

A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.

A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.

A polymer foam layer is disclosed, comprising a polymer foam and a plurality of electrically conductive particles dispersed within the polymer foam, polymer foam layer having an unabraded first surface and an opposite, second surface, wherein the electrically conductive particles essentially continuously span the polymer foam layer, and a portion of the electrically conductive particles are exposed at the first surface of the layer and another portion of the electrically conductive particles are exposed at the second surface. The foams are useful as gaskets for electromagnetic shielding, grounding pads, battery contact conductive spring elements, and the like.

A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and / or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.

An apparatus and method for highly controlled electrodeposition, particularly useful for electroplating submicron structures. Enhanced control of the process provides for a more uniform deposit thickness over the entire substrate, and permits reliable plating of submicron features. The apparatus includes a pressurized electrochemical cell to improve plating efficiency and reduce defects, vertical laminar flow of the electrolyte solution to remove surface gases from the vertically arranged substrate, a rotating wafer chuck to eliminate edge plating effects, and a variable aperture to control the current distribution and ensure deposit uniformity across the entire substrate. Also a dynamic profile anode whose shape can be varied to optimize the current distribution to the substrate. The anode is advantageously able to use metallic ion sources and may be placed close to the cathode thus minimizing contamination of the substrate.

The invention is directed to a method of magnetically linking a ferromagnetic object to a partially magnetized coating material made by applying a coating to a surface of a continuously-moving medium including the steps of providing a coating material by mixing a binder material suitable for being spread substantially and regularly over the surface and a ferromagnetic component, the binder material being a hot melt adhesive; providing a continuously-moving medium having a top surface to be substantially coated, the surface capable of receiving a substantially and regularly spread coating material; passing the coating material and continuously-moving medium between rollers to form a substantially constant thickness of the coating material substantially covering the top surface and allowing the coating material to set to form the coated medium as a magnetizable component, wherein the medium that is coated is one of a paper, a card, wallpaper, a flexible plastic sheet, a rigid plastic sheet, and walls; partially magnetizing the coating material during continuous movement of the medium to create a magnetized area and an unmagnetized area; and magnetically and temporarily linking a ferromagnetic object to the magnetized area so that the coated medium and ferromagnetic object are held together by magnetic attraction.

A cobalt-iron alloy film having saturation magnetization of at least about 2.30 Telsa. The film alloy includes about 55 wt % to about 75 wt. % iron and the remainder cobalt. The film is made by a process in which the film is electrodeposited from an aqueous medium which includes one or more ferrous salts, one or more cobaltous salts, a buffer having a pKa of about 6 to about 8, at least one carboxylic acid having a pKa of between about 3.5 and about 5.5, an aromatic sulfinic acid or its salt and optionally, a halide salt and / or a surfactant. The alloy film is useful as a write head in magnetic recording.

A magnetic garnet single crystal film formation substrate 2 for growing a thick magnetic garnet single crystal film, wherein crystal defects, warps, cracks and flaking, etc. are not caused, by liquid phase epitaxial growth is provided. The substrate 2 comprises a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth; a buffer layer 11a composed of a garnet-based single crystal thin film formed on a crystal growing surface 10a of said base substrate 10 and being stable with said flux; and a protective layer 11b formed at least on side surfaces 10b of said base substrate 10 crossing with said crystal growing surface of said base substrate 10 and being stable with said flux. By using the substrate, a high quality magnetic garnet single crystal film can be produced. The magnetic garnet single crystal film is used as an optical element, such as a Faraday element, used for an optical isolator, optical circulator and magneto-optical sensor, etc.

A laminated magnetic core, which has a number of magnetic layers and a number of insulation layers which are arranged so that an insulation layer lies between each vertically adjacent pair of magnetic layers, is formed in a method that forms the magnetic layers with an electroplating process, and the insulation layers with a sputter depositing process.

The upper magnetic pole layer and / or lower magnetic pole layer comprises a soft magnetic film having a variable region in which the chemical composition of Fe changes in the direction of thickness in at least a part thereof, and the difference of the proportions of Fe between the regions most abundant in Fe and most deficient in Fe is 4% by mass or more in the variable region. The structure of the soft magnetic film permits the saturation magnetic flux density Bs to be improved while decreasing the coercive force Hc by forming fine crystal grains, thereby enabling a thin film magnetic head excellent in high density recording to be manufactured.

A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

The present invention is related to a method for forming a structure that contains alternating first and second ferromagnetic layers of different material compositions. A substrate containing a supporting matrix with at least one open pore and a conductive base layer is first formed. Electroplating of the substrate is then carried out in an electroplating solution that contains at least one ferromagnetic metal element and one or more additional, different metal elements. A pulsed current with alternating high and low potentials is applied to the conductive base layer of the substrate structure to thereby form alternating ferromagnetic layers of different material compositions in the open pore of the supporting matrix.

An R-T-B system permanent magnet 1 comprises a magnet body 2 comprising a sintered body comprising at least a main phase comprising R2T14B grains (wherein R represents one or more rare earth elements, and T represents one or more transition metal elements including Fe or Fe and Co essentially) and a grain boundary phase containing R in a larger amount than the main phase, the magnet body 2 having a 300 μm or less thick (not inclusive of zero thick) hydrogen-rich layer 21 having a hydrogen concentration of 300 ppm or more formed in the surface layer portion, and an overcoat 3 covering the surface of the magnet body 2 can improve the corrosion resistance of the R-T-B system permanent magnet 1 with an overcoat 3 formed thereon without degrading the magnetic properties thereof. The present invention can be applied to formation of the overcoat 3 by electrolytic plating, can fully ensure the corrosion resistance as a primary target of the overcoat 3 formation without substantially degrading the production efficiency, and can provide the R-T-B system permanent magnet 1 with a high dimensional precision by suppressing the partial collapse (detachment of grains) of the surface thereof.

The invention discloses a preparing method of high square ratio magnetic one-dimensional nanometer line array, which comprises the following steps: adopting source voltage of impulsion; proceeding electrical plating deposition for porous aluminum oxide mold with time at 5-50 h; getting the product; setting square ratio (remanence ratio) bigger than 90% and coercitive force at 500-2000Oe. This invention possesses simple operating course, which can increase the square ratio (remanence ratio) and coercitive force and controllability of nanometer line array growth.

A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FewCoxNiyVz in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA / cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density Bs greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similary high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel / non-magnetic metal layers.

An electromagnetic valve includes an extra-high pressure injection system control valve having soft metal powder particles in a magnetic stator core. Electroless nickel plating is applied to the stator core to provide an intermediate surface to absorb grinding wheel stress as a working face is exposed during manufacturing, as well as an external compression layer or casing to hold or encapsulate the powder particles in place and together during assembly and use.

The invention relates to an yttrium iron garnet film structure which belongs to the field of electronic material, in particularly to a method for preparing radio frequency magnetron sputtering of yttrium iron garnet film materials. The film structure consists of a Si substrate and an yttrium iron garnet film layer, wherein a CeO2 transient layer is also arranged between the Si substrate and the yttrium iron garnet film layer. The yttrium iron garnet film structure has the advantages that: surface of the film is improved greatly, surface roughness is reduced obviously, saturation magnetization and remnant magnetization of the film is improved, and coercive force is reduced.

The invention relates to the field of electronic components, in particular to a preparation method of a laminated magnetic bead. A dry casting process is adopted for producing an upper substrate and a lower substrate of the laminated magnetic bead; a wet casting process is adopted for producing an internal dielectric film, and an internal coil of the laminated magnetic bead is manufactured by combining a screen printing process; and an isostatic pressing method is adopted by subsequent procedures, thereby ensuring the consistency of magnet shrinkage rates of a dry method and a wet method. The problems of a long production cycle and low efficiency are solved; and meanwhile, the quality problem of a laminated magnetic bead stress jumper is also solved. According to the preparation method, the magnet shrinkage rate of the magnetic bead is reduced, the production efficiency is improved and the production cycle of the magnetic bead is shortened to within 12 days from 15 days.

The magnetic thin film has high saturation magnetic flux density and superior soft magnetic characteristics. The magnetic thin film of the present invention comprises: a base layer being made of FeCo / NiFe; and a plated layer being formed on the base layer, the plated layer being made of FeCo.

A CoPt- or FePt-alloy magnetic material in which a temperature to transform into an L10-ordered alloy is reduced and magnetic anisotropy energy is controlled, and a method for manufacturing the magnetic material are provided. In a CoPt- or FePt-alloy magnetic material obtained according to plating, at least one element of Cu, Ni and B is contained with an atomic percent equal to or more than 1% and equal to or less than 40%. A method for manufacturing a magnetic material includes a step of depositing a magnetic material in which at least one element of Cu, Ni and B is contained in a CoPt- or FePt-alloy magnetic material with an atomic percent equal to or more than 1% and equal to or less than 40%, from a plating solution, and a step of transforming the deposited magnetic material into an L10-ordered alloy according to annealing at a temperature equal to or lower than 500° C.