The application belongs to the technical field of
electronic information materials, and specifically provides a method for preparing M-type
barium ferrite monocrystal thin film under low temperature conditions; the method is characterized by innovative design of
liquid phase raw materials and strict design of
liquid phase epitaxy process parameters, and can grow the M-type
barium ferrite monocrystal thin film with excellent performance on SGGG (111) substrate by
liquid phase epitaxy method under low temperature conditions of 830-850 DEG C, which is not only simple in process and low in cost, but also has high
crystallization quality, no impurities and defects. The M-type
barium ferrite monocrystal thin film prepared by the method is a
single crystal material, the film thickness is up to 150 mu m, the saturation
magnetization is about 4500 Oe, the
remanence is about 1000 Oe, the easy
magnetization axis (c axis) is perpendicular to the film surface, has high uniaxial magnetic
crystal anisotropy field, and is very beneficial to realize self-bias design of the device.