442results about "Liquid-phase epitaxial-layer growth" patented technology

In a first aspect, the present disclosure relates to a vapor deposition method of coating a carbonaceous substrate with a tantalum carbide coating, where the method includes a coating step. The coating step includes placing the carbonaceous substrate in a reaction chamber and heating the reaction chamber to a temperature between about 1100 DEG C and about 1500 DEG C for a duration of about 1 hour to about 24 hours. The coating step further includes supplying a process gas to the reaction chamber, where the process gas comprises a halide-containing species, and where the process gas comprises less than 4 atomic% carbon and less than 10 vol% H2 within at least 15 minutes after the start of the process. Further, the coating step includes supplying a tantalum-containing substance to the reaction chamber, or placing a tantalum-containing solid into the reaction chamber. Alternatively, the method includes placing a solid comprising a tantalum halide into the reaction chamber.

Embodiments of the present disclosure provide a seed crystal holder and a crystal growth method. The seed crystal holder includes a seed crystal holder body and a connecting rod. The seed crystal holder body is fixed to one end of the connecting rod, and a seed crystal is provided on one side of the seed crystal holder body away from the connecting rod.

The utility model relates to the technical field of single crystal preparation by a liquid phase epitaxy method, in particular to a leading forced convection introducing device for single crystal growth by a resistance heating LPE method, which comprises a graphite crucible and a graphite heating component arranged on the outer side of the graphite crucible, one end of the graphite seed crystal rod extends into the graphite crucible and is connected with the graphite seed crystal support; the seed crystal is adhered to the bottom surface of the graphite seed crystal support; the graphite annular turbofan is arranged in the graphite crucible; the graphite annular turbofan is connected with the graphite seed rod through a jackscrew clamp; the other end of the graphite seed crystal rod is externally connected with a seed crystal lifting and rotating mechanism; and the graphite seed crystal rod drives the seed crystal and the graphite annular turbofan to do lifting and rotating motion. According to the device, the influence of adverse convection on the whole flow field is weakened, and the controllability of the whole flow field can be improved; and meanwhile, an ideal temperature field for growing high-quality silicon carbide crystals in the growth cavity is ensured.

A crystal growth method and system, an apparatus, and a storage medium. The crystal growth method comprises: determining a parameter set of a crystal growth device in a target heat, wherein the parameter set comprises at least one target parameter, and the target parameter is a parameter, affecting crystal growth, in the crystal growth device; acquiring a first temperature measurement value of a first temperature measurement point of the crystal growth device in a target time period of the target heat; and on the basis of the target parameter and the first temperature measurement value, by means of a crystal plane temperature determination model, determining a simulated crystal plane temperature corresponding to the first temperature measurement value.

The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The invention discloses a reinforcement learning-based constant-temperature region temperature compensation method for horizontal liquid-phase epitaxial growth equipment. The method comprises the following steps: S1, acquiring temperature data of a plurality of measurement points in a constant-temperature region of the horizontal liquid-phase epitaxial growth equipment; s2, obtaining a maximum value, a minimum value, an average value and a standard deviation in the temperature data; comparing each temperature data with an initial set temperature to obtain a deviation value; s3, inputting the maximum value, the minimum value, the average value, the standard deviation and the deviation value in the temperature data as input quantities into a pre-constructed and trained reinforcement learning training strategy model to obtain temperature compensation values of the temperature zones; wherein a mapping relation between the input quantity and the temperature compensation value is preset in the reinforcement learning training strategy model. The method has the advantages of simple operation, rapid and accurate temperature compensation and the like.

The invention relates to a random copolymer of structure (A) comprising, a carboxylic acid bearing repeat of structure (I), a 4-vinylbenzocyclobutene derived repeat unit of structure of structure (II), a styrenic repeat unit of structure (III), an alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (IV), a hydroxy functionalized alkyl acrylate or alkyl 2-methylenealkanoate derived repeat unit of structure (V), and two end groups as shown in structure (A) one of which is H and the other is a methyl moiety substituted with Rr, Rr1 and Rr2, wherein Rr1, is a C-1 to C-8 alkyl, Rr2 is selected from a C-1 to C-8 alkyl, a C-1 to C-8 alkylene hydroxy moiety (-alkylene-OH), a C-1-C-8 alkylenecarboxylic acid moiety (-alkylenne-CO2H), or a benzylic alcohol comprising moiety of structure (B), Rr is a cyano moiety (—CN) or a carbonylalkyl moiety (—C(═O)—Ri), wherein Ri is a C-1 to C-8 alkyl or an aryl moiety.

According to the method, a high-pressure induction heating furnace is adopted, and under the nitrogen atmosphere of 2-5 MPa, a graphite crucible with the inner wall coated with silicon carbide (SiC) and a porous SiC carbon source are utilized to control the nitrogen content in a silicon melt and stabilize components; by introducing 0.05-0.30 wt% of an aluminum or yttrium cosolvent, the nitrogen dissolving efficiency and wettability are improved, in the method, a 10-30 DEG C temperature gradient of a carbon source region and a seed crystal region is established, convection of a nitrogen-containing silicon melt is induced, epitaxial growth of the beta-SiN single crystal is promoted, and the growth of the beta-SiN single crystal is further improved by controlling the immersion depth and the cooling rate of the seed crystal. And finally, the (0001)-oriented high-quality beta-SiN single crystal substrate with the thickness larger than or equal to 500 m and the dislocation density smaller than or equal to 1 * 10 cm is prepared. Compared with the traditional PVT and CVD methods, the method provided by the invention can effectively reduce the growth temperature and thermal stress, inhibit Si evaporation and significantly improve the crystal size and quality, and is suitable for the field of high-frequency and high-power semiconductor device manufacturing.

The invention relates to the field of epitaxial growth of thin film materials, in particular to a graphite boat and method for improving the quality of a liquid phase epitaxial thin film, the graphite boat comprises a bottom support, a sliding strip, a mother liquor tank and a sliding upper cover, the bottom support is of a surrounding structure and is used for supporting the sliding strip, the mother liquor tank and the sliding upper cover; the sliding strip is positioned in the bottom support and is used for loading a substrate; the mother liquor tank is positioned above the sliding strip, is positioned in the bottom support and is fixed with the bottom support; and the sliding upper cover is positioned above the mother liquor tank, is positioned in the bottom support and is used for sealing. The tellurium-cadmium-mercury thin film which is bright in surface and free of macroscopic ripples is prepared, the difficulty of a subsequent device process can be effectively reduced, a series of problems of interconnection failure, shading and the like caused by poor thickness uniformity are solved, and great contribution is made to improvement of device performance.

The invention provides a liquid phase epitaxy graphite boat for reducing mother liquor residue, which comprises a mother liquor cover plate, a mother liquor plate, a substrate plate and a bottom plate, the mother liquor plate is provided with at least one mother liquor groove, the back surface of the mother liquor plate is provided with at least one first groove, the substrate plate is provided with a substrate groove for placing a substrate and a second groove, and the bottom plate is provided with at least one second groove. The substrate plate is arranged between the mother liquor plate and the bottom plate in a sliding manner, and the bottom plate is provided with a pushing structure which is used for jacking up the substrate at the first groove and enabling the substrate to incline towards one side of the second groove. Through the design of the pushing structure, after epitaxial growth of each layer is completed, the horizontally-arranged substrate can be inclined, mother liquor flows into the second groove of the substrate plate due to gravity, the purpose of removing the mother liquor is achieved, mother liquor residues on the epitaxial surface after growth of each layer of epitaxial film are effectively reduced, and the production efficiency is improved. Mother liquor mutual pollution caused by residue of the upper layer of epitaxial mother liquor is avoided, meanwhile, the available area of an epitaxial film is increased, and the epitaxial wafer cracking risk caused by cooling stress of the residual mother liquor is reduced.

The invention relates to the technical field of silicon carbide single crystal production, and discloses a seed crystal supporting and protecting structure for growing a silicon carbide single crystal by a liquid phase method, comprising: a seed crystal fixing and supporting rod, which comprises a supporting part and a rod part, the supporting part and the rod part are integrally formed; the silicon carbide seed crystal plate is mounted on the seed crystal fixing and supporting rod; the seed crystal protection ring is mounted on the seed crystal fixing and supporting rod, the upper end surface of the seed crystal protection ring is flush with the upper end surface of the middle supporting part of the seed crystal fixing and supporting rod, and the lower end surface of the seed crystal protection ring is flush with the seed crystal bonding end surface of the silicon carbide seed wafer, so that the flat embedding type layout of the silicon carbide seed wafer is formed. According to the invention, the stability of a seed crystal-melt interface is ensured through the integrally designed seed crystal fixing and supporting rod; the seed crystal protection ring and the convection blocking ring are combined for use, so that triple stable control on a temperature field, a flow field and a concentration field of the edge of the seed crystal is realized; the problems of edge polycrystal parasitism, inclusion defects and interface instability are effectively inhibited, so that the single crystal growth quality and yield are remarkably improved.

A single crystal furnace thermal field, comprising a thermal insulation cylinder, a first heater, and a crucible for containing silicon materials, wherein the thermal insulation cylinder is arranged around the crucible; a groove is provided in the inner wall of the thermal insulation cylinder opposite the crucible, with an opening of the groove facing the crucible; and at least part of the first heater is arranged in the groove. A groove wall of the groove can block the longitudinal thermal radiation of the first heater, thereby preventing heat transfer from the first heater to the bottom, such that heat loss is reduced.

The invention relates to a gallium indium tin oxide film and a preparation method thereof. The preparation method of the gallium indium tin oxide thin film comprises the following steps: carrying out corona treatment on the surface of a substrate to obtain a pretreated substrate; preparing a liquid gallium-indium-tin alloy; and coating the surface of the pretreated substrate with a liquid gallium-indium-tin alloy to obtain the gallium-indium-tin oxide film. The preparation method of the Ga-ITO film has the advantages of being short in flow process, high in controllability, low in energy consumption, high in adjustability and the like, raw materials needed in the preparation process are non-toxic, convenient to collect and reusable, and the preparation cost of the Ga-ITO film can be greatly reduced.

A device for growing silicon carbide single crystals by a liquid phase method, the device comprising a growth crucible, a seed rod, an induction heating device and a material block capable of providing growth raw materials. The growth crucible comprises a crucible body and a crucible cover, the crucible body is filled with the growth raw materials, the crucible cover has an opening, and one end of the seed rod for fixing seed crystals extends into the crucible body through the opening; and the material block has a smaller density than the liquid growth raw materials, and the material block floats on a surface of the liquid growth raw materials. The device can reduce a carbon supply distance, provide a sufficient and long-term stable carbon source for a growth process of silicon carbide single crystals, greatly reduce the generation of inclusions, effectively improve the quality of single crystal growth, effectively inhibit a crucible wall from being melted through, and prevent the leakage of an auxiliary solution from affecting a temperature field and even damaging a single crystal furnace.

The application relates to the technical field of liquid phase epitaxy growth, and discloses a liquid phase epitaxy tool and a method for growing a thin film by using the same. The tool comprises a base, a sliding strip, a detachable supporting component, a mother liquid plate and a cover plate. The detachable supporting component comprises a sleeved inner core and an outer ring. The mother liquid plate is provided with a mother liquid groove for containing mother liquid. The base is provided with a first groove matched with the sliding strip, and the upper surface of the base is provided with a second groove. The sliding strip is located in the first groove, and is provided with a through hole penetrating through the thickness. The detachable supporting component is located in the through hole, and the upper surface of the detachable supporting component is used for placing a substrate. The depth of the second groove is not less than the thickness of the substrate, the width of the second groove is matched with the thickness of the outer ring, and the outer ring falls into the second groove when the sliding strip moves to above the second groove, so that the edge of the substrate protrudes from the inner core. The mother liquid plate is located on the upper surface of the base and the sliding strip. The tool can disconnect the thin film from the surrounding when the mother liquid is in a molten state, and the yield of the thin film is improved.

The utility model discloses a bottom solution residue prevention sample holder for vertical tellurium-cadmium-mercury liquid-phase epitaxial growth, which belongs to the field of infrared semiconductor material preparation and comprises a conical flow guide base, a micro-groove array, a SiC / SiO2 super-lyophobic functional layer and a thermal gradient regulation and control module. During working, the frame body is preheated, the melt flows back along the chamfer surface under the action of gravity during lifting, the micro-grooves generate capillary force for directional diversion, the super-lyophobic layer reduces the adhesion work, and the thermal gradient inhibits solution solidification. By applying the sample holder, the residual quantity of a melt can be greatly reduced, the defect density of an epitaxial layer is reduced, the available area is increased to more than 95%, and the problem of millimeter-scale particle residue in the traditional LPE growth is solved.

The present invention makes it possible to provide a production method for a β-Ga2O3 / β-Ga2O3 laminate that has, on a β-Ga2O3 substrate, a layer which includes a β-Ga2O3 single crystal, said method comprising a step for using a gallium oxide melt which contains a tetravalent differing element and a divalent differing element to form, on a β-Ga2O3 substrate, a layer which includes a β-Ga2O3 single crystal via a liquid phase epitaxial growth method, wherein: the difference in concentration between the tetravalent differing element and the divalent differing element in the obtained layer which includes the β-Ga2O3 single crystal is -1×1019 to +1×1019 atoms / cm3; and the total content of the differing elements in the obtained layer which includes the β-Ga2O3 single crystal is less than 0.01 mol%.

This invention provides a method for growing single crystals of group III nitrides that can improve crystal quality. [Solution] A method for growing a group III nitride single crystal, comprising: an initial nucleation step S1 in which a seed substrate having a plurality of seed crystals made of group III nitride single crystals formed on its upper surface is immersed in a mixed molten liquid stored in a crucible to form a plurality of initial nuclei; a planarization step S2 in which the seed substrate is repeatedly immersed in the mixed molten liquid and then lifted out, and heated in a nitrogen atmosphere to fill the spaces between adjacent initial nuclei with group III nitride single crystals and flatten the crystal plane; and a thickening step S3 in which the seed substrate having the flattened crystal plane is immersed in a mixed molten liquid stored in a crucible to form a thickened group III nitride single crystal on the seed substrate, wherein in the initial nucleation step S1, the mixed molten liquid does not contain alkali metals and alkaline earth metals other than Na, and in the thickening step S3, the mixed molten liquid contains alkali metals or alkaline earth metals other than Na.

The invention discloses a method for in-situ measurement and regulation of wafer warping change in a liquid phase epitaxy process, and the method comprises the steps: starting a wafer warping in-situ measurement unit at a stage of liquid phase epitaxy growth of a rare earth iron garnet single crystal film, and measuring the warping degree of a wafer in a furnace body in real time; dynamically adjusting the rotation speed of the wafer according to the position change of the light spot on the wafer warping in-situ measurement unit until the growth is finished; the dynamic adjustment comprises a high-speed stage change and a low-speed stage change. According to the technical scheme, in-situ monitoring of the crystal growth process is achieved, the warping condition of crystal growth can be adjusted by adjusting the rotating speed, and fluctuation of the wafer cutting yield caused by the difference between a substrate and equipment is effectively improved. According to the warping change of the wafer, the rotation speed is continuously adjusted in the growth process, so that the warping is controlled within a certain range, the problem of wafer cracking is reduced, the product yield is improved, and the growth of a large-size Faraday optical rotation sheet wafer is facilitated.

The invention discloses a silicon carbide epitaxial wafer for inhibiting irradiation induced defects, a preparation method and application, and belongs to the technical field of semiconductor materials, the silicon carbide epitaxial wafer comprises an n-type or p-type silicon carbide wafer as a substrate, and an epitaxial layer doped with group IV atoms is epitaxially grown on the substrate. The preparation method comprises the following steps: cleaning an n-type or p-type silicon carbide wafer; placing the cleaned silicon carbide wafer in epitaxial growth equipment and keeping a vacuum environment; raising the temperature of the vacuum environment, and introducing monosilane, propane, nitrogen / hydrogen carrying trimethyl aluminum and gas containing at least one atom of germanium, tin and lead after the temperature is stable; and growing an epitaxial layer on the silicon carbide wafer. The silicon carbide epitaxial wafer is used for producing an anti-radiation silicon carbide power device. According to the invention, generation of carbon vacancies in a silicon carbide device in an irradiation process and minority carrier lifetime degradation caused by the generation of the carbon vacancies can be effectively inhibited, so that the reliability of the silicon carbide epitaxial wafer and a power device thereof under particle irradiation application is improved.

The utility model provides a liquid phase epitaxy wafer taking shovel, and relates to the technical field of semiconductor material preparation. The liquid phase extension slice taking shovel comprises a bearing shovel and a transparent shovel, the bearing shovel comprises a bearing shovel handle and a bearing shovel support, the transparent shovel comprises a transparent shovel handle and a transparent shovel support, the two opposite sides of the bearing shovel support are each provided with a baffle, and the two opposite sides of the transparent shovel support are rotationally connected to the two baffles respectively; the liquid-phase epitaxial wafer taking shovel has a preparation process and an observation process in sequence, an epitaxial wafer is placed on a transparent shovel support in the preparation process, the back face of the epitaxial wafer is attached to the transparent shovel support, a transparent shovel handle moves towards a bearing shovel handle in the observation process, and the end, away from the transparent shovel handle, of the transparent shovel support tilts up; an observation space is formed between the transparent shovel support and the bearing shovel support, so that a user can observe whether mother liquor remains on the back of the epitaxial wafer through the transparent shovel support. On the basis, when whether mother liquor remains on the back face of the epitaxial wafer is observed, the risk that the epitaxial wafer is scratched and falls off can be reduced.

Provided is a single-crystal diamond wherein: the half width of an X-ray diffraction rocking curve is 20 seconds or less, the half width of the X-ray diffraction rocking curve being measured using CuKα rays in X-ray diffraction by means of a double-crystal method in which a diamond crystal is used as a first crystal, with a (0004) plane parallel arrangement; the half width of a peak at the Raman shift of 1332 cm-1 to 1333 cm-1 in the Raman spectrum is 2.0 cm-1 or less; the etch pit density is 10000 / cm2 or less, the etch pit density being measured by means of an etching test; and the nitrogen content in terms of the number of atoms is more than 0.1 ppm and at most 50 ppm.

This invention discloses a growth apparatus and method suitable for mass production of crystals using liquid-phase methods. The growth method includes: placing a seed crystal and liquid-phase growth material in a first growth container; placing the seed crystal in a second growth container; maintaining the temperature of a first temperature zone at a first temperature T1, the temperature of a second temperature zone at a second temperature T2, and the temperature of a third temperature zone at a third temperature T3, where T1 < T2 > T3; and providing other growth conditions required for crystal growth within the growth chamber; rotating a rotating lifting frame to drive the second growth container and its carried seed crystal along a selected rotation trajectory, so that the second growth container and its carried seed crystal are repeatedly transferred between the first and second temperature zones and repeatedly immersed in the liquid-phase growth material in the first growth container. This invention enables industrial-scale, mass production of high-quality gallium nitride and other single crystals of different sizes, improving production efficiency and quality.

The application belongs to the technical field of epitaxial growth of thin film materials, and particularly relates to a graphite boat for improving surface morphology of thin film materials in horizontal liquid phase epitaxial growth and a growth method of thin films. By using the graphite boat and the growth method of epitaxial thin films provided by the application, macroscopic ripple defects of the epitaxially grown thin film materials caused by solute convection and mercury pressure difference during the preparation of the thin film materials by horizontal liquid phase epitaxy can be eliminated, the uniformity and flatness of the thickness and components of the thin film materials are improved, and the imaging "ghost" phenomenon of the detector is improved.

The present invention relates to a rubidium fluoro-scandium borate compound, a rubidium fluoro-scandium borate nonlinear optical crystal, and a preparation method and application thereof. The rubidium fluoro-scandium borate compound has a chemical formula Rb2ScB3O6F2, does not contain a symmetry center and has a molecular weight of 382.33 g / mol. The rubidium fluoro-scandium borate nonlinear optical crystal belongs to the monoclinic crystal system, and belongs to the non-centrosymmetric space group P21, and the unit cell parameters are: a=4.0372(10) Å, b=11.800(3) Å, c=8.823(2) Å, α=γ=90°, β=98.327(11)°, Z=2. The present invention adopts a high-temperature vacuum packaging method or a solid-state synthesis method to prepare rubidium fluoro-scandium borate compounds. The present invention adopts a fluxing agent method to prepare a rubidium fluoro-scandium borate nonlinear optical crystal, which have the advantages of short absorption cutoff edge, large nonlinear optical effect, good thermal stability, and stable physical and chemical properties. The rubidium fluoro-scandium borate nonlinear optical crystal of the present invention can be used to fabricate nonlinear optical devices, which have important applications in fields such as optics, military, laser lithography, and communication, etc.

The present invention relates to a large-area halide perovskite single crystal heterojunction and a growth method thereof and an application in a nuclear radiation detector. The growth method of the large-area halide perovskite single crystal heterojunction comprises the following steps: placing a pretreated cesium-bromine-lead or cesium-bromine-bismuth substrate in a reagent bottle containing a perovskite precursor solution, and then sealing it; fixing the sealed reagent bottle in a water tank, and performing epitaxial growth of a large-area halide perovskite single crystal film on the substrate by an inversion crystallization method or a cooling crystallization method to obtain a large-area halide perovskite single crystal heterojunction. The method of the present invention has the advantages of low cost, simplicity and high efficiency; the perovskite single crystal heterojunction detector of the present invention can effectively suppress the dark current drift caused by ion migration under reverse bias, thereby obtaining a detection effect with high sensitivity and low detection limit.

The application relates to the technical field of semiconductor material preparation, in particular to a liquid phase epitaxial growth method and equipment for dynamically regulating lattice mismatch. The specific content is as follows: a substrate is pretreated to prepare micro pits and grooves of the substrate, and a uniform solution is prepared according to phase diagram information; a temperature gradient is set in a multi-zone temperature control epitaxial furnace, and the epitaxial growth of the substrate is controlled through a boat device; the substrate and the solution pool are sequentially moved into the furnace; during the epitaxial growth process, the lattice constant error, morphology and photoelectric properties of the growth are detected, and when the detection signal deviates from the predetermined threshold, the lattice mismatch is compensated by adjusting the solution concentration and the temperature; during the displacement process, the mother liquor remaining between different layers is poured into the grooves of the substrate through the inclined substrate. The application solves the problem of lattice mismatch control by real-time detection and real-time regulation of the lattice mismatch, and improves the quality and performance of the epitaxial layer.

Provided is a group-III element nitride semiconductor substrate which, even when the off-orientation varies, exhibits little behavior change in crystal growth during epitaxial growth, and in which in-plane morphological disturbance and characteristic variation are unlikely to occur. A group-III element nitride semiconductor substrate according to one embodiment of the present invention is provided with a first surface and a second surface. A c-surface is inclined with respect to the orientation of the first surface. The direction of the inclination is oriented between the <1-100> direction and the <11-20> direction.

The utility model relates to the technical field of liquid phase epitaxy, and provides a sample holder for vertical liquid phase epitaxy growth, which comprises a main body and a plurality of fixing components arranged on the main body, and the main body is provided with a plurality of mounting positions for mounting substrates; the plurality of fixing assemblies are in one-to-one correspondence with the plurality of mounting positions, and each fixing assembly comprises a first clamping block and a second clamping block which are detachably arranged on the main body; the first clamping block and the second clamping block are arranged on the left side and the right side of the installation position respectively, the distance between the first clamping block and the second clamping block can be adjusted, and the first clamping block and the second clamping block are used for clamping or loosening a substrate placed on the installation position. According to the sample holder, the substrate is fixed through the first clamping block and the second clamping block which are arranged on the two sides and have the adjustable distance, mother liquor cannot be left between the sample holder and the fixing assembly in the actual application process, and therefore the sample holder can be rapidly assembled and disassembled without polluting the back face of the substrate, and the working efficiency is greatly improved.