2114results about "By pulling from melt" patented technology

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The high-frequency heating device includes at least a phase difference detector, a frequency controller, an inverter, and an LCR circuit, and the phase difference detector detects the phase difference between the high-frequency voltage generated by the frequency controller and the high-frequency current flowing through the LCR circuit, and the inverter updates the driving frequency of the high-frequency voltage based on the phase difference to control the current in the LCR circuit.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

The invention provides a crystal growth device and a crystal growth method for separating crystals from melts, and solves the defect that polycrystals are easy to generate during crystal growth at present. The growth device comprises a heat preservation furnace, a heater, a crystal growth crucible, a lining crucible, a lifting mechanism, a ceramic lifting seat, pressing graphite, a heat conduction graphite ring and a heat preservation ring, the crystal growth crucible is coaxially arranged in the heat preservation furnace; the heater is coaxially arranged between the crystal growth crucible and the holding furnace; the lining crucible is coaxially arranged in the crystal growth crucible and comprises a crucible bottom plate, a melt transmission channel and a crucible main body which are coaxial and communicated from bottom to top; in order to reduce the influence of the melt on the crystal in the growth process, the crystal and the melt are physically separated, the growth device with the two crucibles is designed, and in consideration of the importance of stable crystal growth thermal field environment, heat transfer of the two crucibles is isolated through the heat preservation ring; the heat-conducting graphite is used for uniformizing the temperature of the center and the edge of the melt, and concave liquid surfaces are avoided.

The utility model discloses a thermal field structure for X-cut lithium niobate crystal growth, the X-axis is defined to extend upwards, the thermal field structure comprises a thermal insulation structure and a crucible, both the thermal insulation structure and the crucible are elliptical cylinders with open upper ends and closed lower ends, when the thermal field structure is used, the crucible is placed in the thermal insulation structure, the central axes of the crucible and the thermal insulation structure coincide, and the central axes of the crucible and the thermal insulation structure coincide. The heat preservation structure is provided with a long axis a1 and a short axis b1, the crucible is provided with a long axis a2 and a short axis b2, the long axis of the heat preservation structure and the long axis of the crucible both extend in the Y-axis direction, the short axis of the heat preservation structure and the short axis of the crucible both extend in the Z-axis direction, and the grown lithium niobate crystal is an elliptic cylinder. According to the utility model, the problem that the crystal is easy to crack in the prior art is solved, and the success rate of the growth of the X-axis lithium niobate crystal is improved.

The invention provides a czochralski silicon single crystal growth process multivariable monitoring method, and belongs to the technical field of czochralski silicon single crystal growth. Comprising the following steps: synchronously acquiring and pre-processing various process variable time sequence data in a czochralski silicon single crystal growth process to obtain a multivariable time sequence matrix; performing slow feature extraction on the multivariable time sequence matrix by using a multi-scale sliding window strategy, and sequentially constructing a static slow feature matrix and a dynamic slow feature matrix; the static slow feature vector and the dynamic slow feature vector of each time step are spliced into a fusion slow feature vector, all the fusion slow feature vectors form a fusion slow feature matrix, and the fusion slow feature matrix is divided into a fusion training set and a fusion test set; and constructing an auto-encoder network model, and training and testing the auto-encoder network model to obtain a multivariable monitoring result. According to the invention, accurate real-time monitoring of the growth process of the czochralski silicon single crystal in a complex environment can be realized.

The invention discloses a silicon single crystal growth interface deformation detection method, system, equipment and medium, and relates to the technical field of silicon single crystal growth soft measurement modeling. Comprising the following steps: acquiring a process parameter set in a silicon single crystal production process; the process parameters in the process parameter set serve as nodes, mutual information indexes between the nodes serve as edges, and a graph structure model is constructed; performing multi-layer neighborhood aggregation operation on the graph structure model to obtain initial features; performing attention mechanism operation on the initial features to obtain aggregated features; and carrying out weighting operation on the aggregation characteristics by adopting a long-short-term memory network to obtain a deformation detection result of the silicon single crystal growth interface. According to the method, the modeling expressive power of a complex dynamic process is improved, and the sensitivity and the response speed of an abnormal deformation evolution trend are also remarkably enhanced.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

In a first step S101, the raw material is directly induction heated using a high-frequency induction heating coil (103) while cooling the outer periphery of a raw material (151) to or below the melting point of the raw material by a cooling mechanism (102) to form a raw material melt (152) (raw material melting step). In a second step S102, a seed crystal (161) is brought into contact with the melt (seeding step). In a third step S103, a crystal (153) is grown from the seed crystal (crystal growth step). In the third step S103, the high-frequency induction heating coil and the seed crystal are gradually separated from each other while maintaining the relative distance between the high-frequency induction heating coil and the outer periphery of the raw material, and the crystal is grown in the melt.

The invention relates to a quartz crucible coating and a preparation method thereof.The coating is of a double-layer composite structure and comprises a substrate layer and a functional layer, the substrate layer is composed of 40-65 vol% of polycrystalline silicon powder (the particle size D50 ranges from 1 micrometer to 5 micrometers) and 35-60 vol% of nanometer silica sol, and the functional layer covers the surface of the substrate layer and is composed of 50-70 vol% of polycrystalline silicon powder, 20-35 vol% of nanometer silica sol and 5-15 vol% of calcium fluoride powder (the particle size D90 is smaller than 0.5 micrometer). The preparation method comprises the following steps: preparing a substrate layer slurry and a functional layer slurry, sequentially coating the inner wall of a crucible with the slurry, drying, and sintering in an inert atmosphere according to a three-step temperature control program to finally form a coating with the thickness of 180-300 microns and the porosity of 8-15 vol%; the coating structure can avoid pollution of silicon nitride or silicon carbide particles, has excellent demolding performance, thermal stability and adhesive force, further improves the service life of a crucible and the purity of a silicon ingot, and meets the requirements of an advanced semiconductor process for cleanliness and reliability.

The utility model relates to a crucible lifting and fixing device and crucible transferring equipment and relates to the technical field of silicon carbide growth, the crucible lifting and fixing device comprises a lifting support, a driving assembly, a sliding rod and two positioning supporting pieces, the lifting support serves as an integral supporting frame body, and the driving assembly is arranged on the lifting support; the sliding rod is arranged on the lifting support and located on the bottom side of the driving assembly. The two positioning supporting pieces are arranged on the sliding rod in a sliding mode and are in transmission connection with the driving assembly. Wherein the two positioning supporting pieces are configured to be far away from each other or close to each other under the driving of the driving assembly so as to be positioned and clamped on the inner wall of the outer crucible or be separated from the outer crucible. Compared with the prior art, the crucible lifting and fixing device provided by the utility model has the advantages that the outer crucible hole position can be automatically clamped, the problem of clamping caused by screwing and unscrewing of a conventional bolt buckle is avoided, and time and labor are saved.

An ingot puller apparatus for producing a single crystal ingot includes a housing defining a growth chamber and a growth chamber outlet, a crucible positioned in the growth chamber for containing a melt of semiconductor material, a cooling jacket positioned in the growth chamber between the crucible and the growth chamber outlet, the cooling jacket defining a cooling passage having an inlet proximate the crucible and an outlet proximate the growth chamber outlet, a puller positioned to contact a seed crystal with a surface of the melt and pull the single crystal ingot from the melt and through the cooling passage, and an actuator connected to the cooling jacket and operable to move the cooling jacket in the growth chamber to control a cooling profile of the single crystal ingot.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention relates to the technical field of crystal growth, in particular to a device and a method for diversion growth of silicon carbide single crystals. The invention provides a device for diversion growth of silicon carbide single crystals. The device comprises a crucible, a first rotary lifting shaft and a turbine liquid pump kit, the turbine liquid pump kit comprises a flow guide baffle, the upper portion of the flow guide baffle is connected with the first rotary lifting shaft, a seed crystal support with seed crystals is installed on the lower portion of the flow guide baffle, turbine blades are installed on the flow guide baffle and evenly distributed around the seed crystals, and the height of the lower ends of the turbine blades is smaller than that of the seed crystals. The invention provides a device and a method for diversion growth of silicon carbide single crystals, which can improve the transmission stability and transmission efficiency of solute in a solution and improve the long-time growth stability of crystals.

The invention provides a single crystal furnace crystal pulling ending parameter control method and system based on adaptive regulation, and the method comprises the steps: collecting production data and parameter data of an ending starting point through a distributed sensor network and a processing equipment interface, and processing the data to obtain current state data of a crystal; and performing similarity comparison on the current state data of the crystal to obtain initial process parameters of the ending stage, and deducing and predicting state expectation evolution data of the crystal in the ending process based on the current state data of the crystal and the initial process parameters. According to the method, through the synergistic effect of full-state perception, foresight deduction, risk quantification and self-adaptive regulation and control, the bubble capture risk index is stably controlled to be 0.5 or below, the stability of a solid-liquid interface in the ending stage is improved, the technological process is not affected by the experience level of operators, and the optical uniformity consistency between batches is greatly improved.

The invention relates to the field of crystal growth, in particular to a sapphire crystal heating device and method.The sapphire crystal heating device is suitable for a sapphire furnace, the sapphire furnace comprises a furnace body and a crucible, and the crucible is located in the furnace body; the sapphire crystal heating device comprises a heat preservation unit located between the furnace body and the crucible, a heat preservation cavity is formed in the heat preservation unit, the crucible is covered with the heat preservation unit, and the heat preservation unit is used for conducting heat preservation on the environment in the heat preservation cavity; a through hole allowing the lifting rod to enter the heat preservation cavity is formed in the top face of the heat preservation unit, and the diameter of the through hole is 2-5 times that of the lifting rod; the heating unit is located in the heat preservation cavity, and the heating unit is used for heating the raw materials in the crucible; and the temperature monitoring unit is used for penetrating through the through hole to measure the temperature of the raw material in the crucible. By designing the diameter of the through hole, the temperature measurement visual angle and heat control are considered, and the technical effect of improving the sapphire crystal growth quality is achieved.

The invention provides a crystal pulling method for improving the BMD defect density in monocrystalline silicon and a monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon crystal pulling, and particularly relates to the following steps: stabilizing the oxygen content in a crystal in a relatively high interval by cooperatively regulating and controlling the argon flow, the furnace pressure, the crucible rotating speed, the crystal rod rotating speed and the pulling speed, providing a sufficient oxygen source for generation of BMD defects, and improving the BMD defect density in the monocrystalline silicon on the basis of stabilizing the oxygen content in the crystal in a relatively high interval. In the equal-diameter process, temperature compensation is carried out on a crystal bar through a preset temperature compensation device, diffusion and precipitation of oxygen atoms are effectively promoted to form BMD crystal nucleuses, the BMD body defect density and the axial distribution uniformity are remarkably improved, the specification lower limit of the BMD density is promoted to be improved to 1.0 E + 11 ea / cm < 3 > or above, the internal gettering capacity of a silicon wafer is finally enhanced, and the service life of the silicon wafer is prolonged. And a reliable guarantee is provided for improving the performance and yield of the device.

A crystal pulling method and system for fabricating a large-diameter silicon single crystal, and a silicon single crystal and a medium. The method can comprise: performing global two-dimensional simulation on a crystal pulling process, and acquiring a global temperature distribution, a velocity field distribution and an initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus and a preset crystal pulling parameter; on the basis of the global temperature distribution and the velocity field distribution, determining a boundary condition, and on the basis of the boundary condition, performing local three-dimensional simulation on the crystal pulling process to determine a target solid-liquid interface value; adjusting the preset crystal pulling parameter until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and using the adjusted preset crystal pulling parameter as a reference crystal pulling parameter; on the basis of the reference crystal pulling parameter, simulating and calculating a simulated defect during the crystal pulling process; on the basis of the simulated defect, iteratively optimizing the reference crystal pulling parameter until the simulated defect meets a preset condition, and using the optimized reference crystal pulling parameter as a target crystal pulling parameter; and fabricating a defect-free silicon single crystal.

A device for crystal growth and a crystal growth method. The device comprises a seed crystal holder, a seed crystal connecting rod, and a state detection assembly. The seed crystal holder is connected to one end of the seed crystal connecting rod, and the state detection assembly is configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects the state of the seed crystal holder relative to a melt, and the melt is used for crystal growth.

A Czochralski round silicon core growth furnace, comprising a furnace body, a pulling and rotating device, a multi-axis pulling disc device and a heat shield lifting device, wherein the furnace body comprises a main furnace chamber and an auxiliary furnace chamber, and the auxiliary furnace chamber is detachably connected to the main furnace chamber; the pulling and rotating device comprises a crystal pulling and lifting mechanism and a rotating mechanism; the multi-axis pulling disc device comprises a housing and a gear transmission mechanism located in the housing; the crystal pulling and lifting mechanism is connected to the housing; the rotating mechanism is connected to the gear transmission mechanism; the gear transmission mechanism is connected to a plurality of sets of seed crystals; and the heat shield lifting device comprises a lifting drive device and a perforated water-cooled jacket connected to the lifting drive device. The perforated water-cooled jacket is lifted by means of the lifting device to move up and down, and the auxiliary furnace chamber is detachably connected to the main furnace chamber, such that the function of cleaning ash without furnace shutdown is achieved, thereby effectively preventing impurities from falling, and ensuring the purity of a silicon melt.

The invention provides a crystal pulling method for improving light boron-doped crystal BMD and a silicon single crystal rod, and belongs to the technical field of silicon single crystal pulling, crystal rod pulling is carried out in a predetermined thermal field to change the temperature gradient in the thermal field and increase the interval length of the BMD nucleation temperature, and in the crystal pulling process, the BMD nucleation temperature is increased. According to the present invention, the crystal rotation, the crucible rotation and the pulling speed are adjusted so as to improve the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar, such that the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar are pre-improved so as to provide sufficient raw materials for BMD nucleation, and then the temperature gradient in the thermal field is changed so as to increase the interval length of the BMD nucleation temperature, interstitial oxygen and vacancies are promoted to generate BMD, and then the BMD defect density in the light boron-doped crystal is remarkably improved through the synergistic effect of a preset thermal field, crystal transition, crucible transition and the pulling speed.

The invention provides a quartz crucible crushing device and method.The quartz crucible crushing device comprises a vibration platform, a clamping assembly and a knocking assembly, the vibration platform is used for placing a carbon-carbon crucible with a quartz crucible, the outer side wall of the carbon-carbon crucible is placed on the vibration platform, and the clamping assembly is used for clamping the carbon-carbon crucible; the clamping assemblies are oppositely arranged on the two sides of the vibration platform and used for clamping the carbon-carbon crucible, and the knocking assembly is arranged on the side, not provided with the clamping assemblies, of the vibration platform, can move along the inner side wall of the quartz crucible and is used for knocking the inner side wall of the quartz crucible. The automatic crushing device has the beneficial effects that automatic crushing of the quartz crucible is achieved in a knocking and vibrating mode, the crushing effect is guaranteed, the working intensity is reduced, potential safety hazards are reduced, the working efficiency is improved, damage to the carbon-carbon crucible is reduced, and the service life of the carbon-carbon crucible is prolonged.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention discloses a method for automatically measuring resistivity in a crystal pulling process. The method comprises the following steps: arranging an exciting coil in a water cooling screen of a crystal pulling furnace, introducing alternating current to generate a magnetic field, cutting the magnetic field by utilizing rotation and lifting motion of a crystal bar to generate eddy current, measuring impedance change of the coil, and calculating the resistivity in combination with a formula. According to different pulling speeds of seeding, shouldering, shoulder rotating and equal-diameter stages in the crystal pulling process, the alternating current frequency and the sampling rate are dynamically adjusted, and the eddy current signal sensitivity is optimized. The surface temperature of the crystal bar is obtained in real time by adopting a temperature monitoring device, and the error of the temperature to the resistivity is corrected by combining first principle calculation or molecular dynamics simulation. A machine learning algorithm predicts shoulder resistivity based on a historical doping database. According to the method, real-time and accurate resistivity measurement in the crystal pulling process is achieved, the product yield is remarkably improved, resistance reverse cutting is reduced, the method is suitable for photovoltaic and semiconductor monocrystalline silicon production, and an efficient and reliable solution is provided for process optimization.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention relates to a silicon single crystal drawing method capable of reducing the resistivity range of a whole silicon single crystal rod, which belongs to the technical field of wafer processing and comprises the following operation steps of: 1, completely melting a solid silicon material and a doping agent into liquid in a crucible a; and 2, slowly lowering the crucible position in the crucible b to realize that a part of liquid at the bottom of the crucible is slowly solidified into a solid from the bottommost part. And 3, after the crucible in the crucible c is slowly lowered and stopped, seeding, shouldering and equal-diameter operation are carried out. And 4, carrying out an equal-diameter growth stage in the d crucible. And 5, continuously growing the single crystal rod in the e crucible. And 6, finishing silicon single crystal drawing in the crucible f through an ending process. An initial state of'high-concentration melt + low-concentration solid 'is constructed before crystal pulling, and real-time and dynamic dilution compensation is performed on the concentration of a dopant of a main melt, so that the inherent defect of resistivity axial non-uniformity caused by a segregation effect in a traditional Czochralski method is effectively overcome.

The invention belongs to the technical field of semiconductor crystal growth, and particularly relates to a magnetic field dynamic adaptation system and method for improving single crystal oxygen content uniformity, the melt liquid level height H is sensed in real time through a liquid level position sensing unit, thermal field state data W is obtained through a temperature zone monitoring unit, and the single crystal oxygen content uniformity is improved on the basis of the melt liquid level height H and the thermal field state data W. And the control module converts the target position Pz into a driving instruction and sends the driving instruction to the magnetic field execution module to drive the magnetic field execution module to synchronously and dynamically adjust the magnetic field space position of the magnetic field generator, converts the target intensity Btarget into a driving instruction and sends the driving instruction to the magnetic field execution module to drive the magnetic field execution module to synchronously and dynamically adjust the magnetic field intensity of the magnetic field generator. The magnetic field space position of the magnetic field generator is dynamically adjusted to promote oxygen to be conveyed uniformly, so that the radial oxygen concentration CV value is reduced, the magnetic field intensity of the magnetic field generator is dynamically adjusted to avoid nonlinear fluctuation in the oxygen segregation process, and the linearity of an axial oxygen distribution curve is improved.

The invention provides a semiconductor silicon single crystal growth value prediction method based on event trigger learning, and belongs to the technical field of silicon single crystal growth prediction. Comprising the following steps: constructing a value state space model according to a silicon single crystal growth mechanism; embedding the value state space model into a long short-term memory network to construct a network model; an attention mechanism is introduced into the network model, weighted fusion processing and physical constraint mapping processing are carried out in sequence, and the network model is constructed; based on an event triggering learning mechanism, training and adjusting the network model by utilizing historical time sequence data of the semiconductor silicon single crystal growth value to obtain a trained network model; and inputting the technological parameters at the current moment into the trained network model, and predicting the growth value of the semiconductor silicon single crystal at the next moment. According to the method, the accuracy, the real-time performance and the self-adaptive updating capability of semiconductor silicon single crystal growth value prediction can be improved.