4933results about "By pulling from melt" patented technology

The invention relates to a monocrystalline silicon thermal field multi-section dynamic cooperative heating control method and system, and the method comprises the following steps: constructing a thermal field multi-section temperature coupling model, dividing a thermal field into n axial heating sections, and building a dynamic relation between power input and temperature gradient; a deep reinforcement learning agent is designed, the state space of the deep reinforcement learning agent integrates the temperature of each heating section, the crystal lifting speed, the crucible lifting speed and the temperature gradient, and the action space outputs the power adjusting quantity of each heating section; defining a multi-target reward function, and jointly optimizing temperature gradient tracking, total power change and crucible bottom safety threshold; training the intelligent agent offline based on the thermal field model, and optimizing the strategy network; an intelligent agent is deployed online, and a power adjusting instruction is generated in real time; the control strategy is dynamically corrected, and online fine adjustment is performed through setting trigger adjustment. According to the method, the defects of a traditional method in the aspects of temperature gradient control precision, energy consumption economy and abnormal working condition self-adaptability are overcome, and the growth quality and efficiency of monocrystalline silicon are remarkably improved.

The present application relates to the technical field of carbon / carbon composite materials, and specifically discloses a carbon-carbon guide tube and a preparation method thereof. The preparation method of the carbon-carbon guide tube comprises: cutting carbon fibers into short fibers, combing the short fibers into a mesh; immersing the mesh into an impregnation liquid in the equipment to obtain a pre-impregnated mesh; laying multiple layers of impregnated mesh on the surface of a mold; curing the multiple layers of impregnated mesh on the mold, demolding to obtain a blank; carbonizing and graphitizing the blank; subjecting the graphitized blank to a chemical vapor deposition densification process and a pyrolytic carbon coating process in sequence to obtain a carbon-carbon guide tube. The method for preparing the carbon-carbon guide tube does not require the preparation of a preform, thereby eliminating the problem of carbon fiber waste generated during the manufacturing process of the preform, and can shorten the manufacturing cycle, improve production efficiency, and reduce production costs. The carbon-carbon guide tube prepared by the method has good mechanical properties and corrosion resistance, and can meet the use requirements of the guide tube for the thermal field of a photovoltaic direct-pull single crystal silicon furnace.

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

The invention relates to the technical field of semiconductor material preparation, and provides a method for controlling the resistivity of a fifth main group element doped crystal bar, crystal pulling time is distinguished in different crystal pulling stages, the volatilization coefficient of doped elements in different time periods is adjusted, the volatilization amount of the doped elements in each time interval is calculated more accurately, and the resistivity of the doped crystal bar is controlled. Therefore, the amount of doping elements required for controlling the resistance can be calculated more accurately, the resistance of the crystal bar can be adjusted more effectively and more accurately, the resistance difference between the head and the tail of the single-crystal crystal bar can be better reduced, meanwhile, through timely adjustment of the control process of the grade and the ending volatilization amount, the supplementary doping condition in the crystal pulling process is defined, and the crystal pulling efficiency is improved. And the resistance hit rate of the crystal bar is improved, and the head and tail resistance difference is reduced, so that the resistivity of each part of the crystal bar is accurately controlled, and the consistency of subsequent silicon wafer product quality is ensured.

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

The invention discloses an interpretable data-driven semiconductor silicon single crystal growth diameter prediction method, which comprises the following steps of: firstly, preprocessing experimental data, and calculating a maximum mutual information coefficient (MIC) to obtain an auxiliary characteristic variable related to a crystal diameter variable; estimating a time delay order between the auxiliary characteristic variable and the crystal diameter, and performing time sequence alignment of the data sequence; and establishing a crystal diameter deep learning prediction model TCN-LSTM and the like based on the time convolution network TCN and the long and short term memory network LSTM, and finally obtaining a crystal diameter prediction result. The problems that in a crystal diameter prediction method in the prior art, the number of mechanism model assumed conditions is large, the prediction result is inaccurate, and a data driving model does not have interpretability are solved.

The invention relates to the field of Czochralski single crystal furnace crystal bar production, in particular to a Czochralski single crystal shouldering control system, which comprises a CCD (Charge Coupled Device) information acquisition unit, a computer information storage processing unit and a PLC (Programmable Logic Controller) growth regulation unit, the computer information storage processing unit receives information acquired by the CCD information acquisition unit, then performs cloud data storage processing and outputs single crystal shoulder information of a corresponding time node to the PLC growth regulation unit, and the PLC growth regulation unit performs shouldering cooling amount control, automatic crucible lifting intervention in the shouldering process, automatic intervention control of equal-diameter liquid opening distance and pulling speed control. According to the method, the problems of shouldering line breakage and equal-diameter head line breakage caused by the fact that automatic regulation of the current shouldering pulling speed does not conform to actual growth of crystals are solved, and the consistency of field process parameter management is improved.

The embodiment of the invention provides a Czochralski method crystal growth device and a regulation and control method, and relates to the technical field of crystal growth. The Czochralski method crystal growth device comprises a furnace body, a crucible, a first magnetic field device, a seed rod and a second magnetic field device, the crucible is arranged in the furnace body, and the first magnetic field device is arranged on the outer side of the crucible in a surrounding mode and located in the furnace body. The seed rod is arranged in the furnace body and is spaced from the crucible; the second magnetic field device is arranged on the seed crystal rod and is positioned in the furnace body; wherein the first magnetic field device is used for generating a magnetic field and acting on a melt in the crucible; the second magnetic field device is used for generating a magnetic field and acting on a growth interface of the melt. The Czochralski method crystal growth device can effectively inhibit convection of melt, so that solute distribution is uniform, and crystal defects are reduced; and the crystal structure can be optimized, and accurate regulation and control of solute are realized, so that the quality and the performance of the crystal are integrally improved.

Embodiments of the present disclosure provide a seed crystal holder and a crystal growth method. The seed crystal holder includes a seed crystal holder body and a connecting rod. The seed crystal holder body is fixed to one end of the connecting rod, and a seed crystal is provided on one side of the seed crystal holder body away from the connecting rod.

The invention relates to the technical field of silicon carbide single crystal preparation, in particular to a method and a device for growing silicon carbide single crystals by a liquid phase method. The embodiment of the invention provides a method for growing a silicon carbide single crystal by a liquid phase method, which comprises the following steps of: heating and melting a material containing a solvent element in a crucible resistant to high-temperature melt corrosion to obtain a high-temperature solution in the crucible; putting a raw material block prepared from silicon carbide into the high-temperature solution so as to provide a carbon element and a silicon element in the high-temperature solution; and driving a silicon carbide seed crystal to enter the crucible by using a first rotary lifting rod, so that the silicon carbide seed crystal is in contact with the liquid level of the high-temperature solution to grow the silicon carbide single crystal. The embodiment of the invention provides a method and a device for growing silicon carbide single crystals by a liquid phase method, which can realize long-time stable growth of silicon carbide crystals.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

A method of preparing a silicon-on-insulator structure includes forming an epitaxial silicon layer on a front surface of a single crystal silicon donor substrate, forming a dielectric layer on the epitaxial silicon layer to thereby form an epitaxial donor structure including the single crystal silicon donor substrate, the epitaxial silicon layer, and the dielectric layer, bonding the dielectric layer of the epitaxial donor structure to a front surface of a handle structure, the handle structure including a single crystal semiconductor handle substrate, to thereby form a bonded structure including the handle structure, the dielectric layer, the epitaxial silicon layer, and the single crystal silicon donor substrate, and removing the single crystal silicon donor substrate and a portion of the epitaxial silicon layer from the bonded structure to thereby form the silicon-on-insulator structure including the handle structure, the dielectric layer, and a silicon device layer.

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

The present invention provides a single crystal furnace and a single crystal silicon rod annealing method, the single crystal furnace comprises: a main chamber comprising a furnace body and a throat structure located above the furnace body which are connected with each other, and the furnace body is used for forming a single crystal silicon rod; the auxiliary chamber is mounted above the throat structure; the flow guide cover is arranged in the main chamber and located at the throat structure, the flow guide cover comprises a cover body, and the cover body is provided with a middle flow channel allowing the silicon single crystal rod to penetrate through and an annular flow channel surrounding the middle flow channel; the throat structure is provided with an inlet which is communicated with an inlet of the annular flow channel so as to introduce a first fluid into the annular flow channel; an inlet of the middle flow channel is communicated with the auxiliary chamber so as to receive a second fluid introduced from the auxiliary chamber; and an outlet of the annular flow channel is communicated with an outlet of the middle flow channel, so that the first fluid and the second fluid are converged to cool the monocrystalline silicon rod, and the problem that the minority carrier lifetime of monocrystalline silicon is easily shortened by a monocrystalline silicon annealing process in the prior art is solved.

The invention relates to the field of crystal preparation, in particular to a production device and a preparation method of monocrystalline silicon, the monocrystalline silicon and an insulated gate bipolar transistor. The apparatus for producing monocrystalline silicon comprises: a crucible for placing and melting a raw material; the heating module is arranged around the crucible and comprises a fixed heater at the upper part and a movable heater at the lower part, and the movable heater moves along the lifting direction of the crystal bar so as to accurately control the crystal growth temperature gradient and the oxygen diffusion transmission mode at different stages of crystal growth; and the magnetic field module is used for applying an asymmetric hook-shaped magnetic field in the crystal growth process so as to inhibit convection of raw materials in the crucible, reduce the oxygen concentration and improve the radial uniformity of oxygen. According to the technical scheme, on the basis of 300mm N-type monocrystalline silicon, under low oxygen (lt; 5ppma), ROGlt; and on the basis of 10%, the target of low potential type defect density can also be achieved, so that the high-quality requirements, including ultralow oxygen content, low defect density and the like, of an IGBT (Insulated Gate Bipolar Translator) on a silicon single crystal substrate are met. The efficient preparation of the ultralow-oxygen N-type silicon single crystal is realized by combining a heater with a novel structure with a CUSP magnetic field technology and matching with crystal pulling process parameter optimization. According to the silicon single crystal prepared by the method, the performance and the reliability of an IGBT (Insulated Gate Bipolar Translator) can be remarkably improved, the production cost is reduced, and the requirements of modern power electronic devices on high-performance silicon-based materials are met.

The invention provides a process for preparing a silicon single crystal rod by a multi-feeding and multi-pulling method. The invention provides a process for preparing monocrystalline silicon by a multi-feeding and multi-pulling method for quantitatively compensating volatile doping elements in a re-feeding stage, which is a method for measuring and calculating the concentration of a volatile doping agent in a residual silicon melt in the re-feeding stage of the multi-feeding and multi-pulling method. Therefore, the purposes of accurately compensating the concentration of the volatile dopant and guaranteeing the quality consistency between crystal bars are achieved. According to the method, the concentration of the volatile dopant in the residual silicon melt in the re-feeding stage can be accurately measured under the condition that a crystal pulling furnace platform is not changed at all; the compensation amount of the volatile dopant in the re-feeding stage can be accurately obtained, and the stable quality of the crystal bar is ensured; meanwhile, auxiliary equipment is not needed, the method is low in cost, good in economical efficiency, suitable for various volatile dopants, wide in application range and suitable for an existing technology for preparing monocrystalline silicon through a multiple-feeding and multiple-pulling method, the technology does not need to be changed, and the production efficiency is high.

The invention discloses a phosphorus-antimony co-doped monocrystalline silicon rod, a preparation method and application, in the phosphorus-antimony co-doped monocrystalline silicon rod, the antimony element concentration is 2.3 * 10 < 16 > atoms / cm < 3 >-1.17 * 10 < 14 > atoms / cm < 3 >, and the phosphorus element concentration is 7.66 * 10 < 15 > atoms / cm < 3 >-3.9 * 10 < 13 > atoms / cm < 3 >. According to the embodiment of the invention, the silicon single crystal rod is doped with the phosphorus element and the antimony element at the same time, and when only the phosphorus element is doped in the silicon single crystal rod, the resistivity of the obtained silicon single crystal rod is usually high at the head and low at the tail; when only the antimony element is doped in the single crystal silicon rod, due to the fact that antimony is extremely volatile, the controllability of antimony doping in the preparation process is relatively low, and the resistivity is prone to occurrence of the conditions that the head is low and the tail is high, and therefore the difference of the resistivity of the single crystal silicon rod can be reduced through co-doping of phosphorus and antimony in the implementation mode of the application.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The preparation method of the quartz crucible comprises the following steps that a crucible green body is prepared, the crucible green body comprises a first quartz sand layer and a second quartz sand layer which are sequentially arranged from outside to inside, and the second quartz sand layer comprises quartz sand and barium carbonate; the purity of the quartz sand in the first quartz sand layer is smaller than that of the quartz sand in the second quartz sand layer; the crucible green body is fired, and a crucible body is obtained; a protective coating is sprayed to the inner surface of a crucible body through inert gas, then gradient heating heat treatment is conducted after carbon dioxide gas is introduced, the quartz crucible is obtained, the quartz crucible comprises the crucible body and a protective layer located on the inner surface of the crucible body, and the protective layer comprises barium carbonate, nano silicon dioxide and barium borate. According to the preparation method of the quartz crucible, the binding force between the protective coating and the inner surface of the quartz crucible can be improved, the corrosion resistance of the quartz crucible is improved, and the service life of the quartz crucible is prolonged.

The invention relates to a temperature regulation and control method for a sapphire crystal growing furnace, the temperature regulation and control method is applied to the sapphire crystal growing furnace, the sapphire crystal growing furnace comprises a heat preservation structure, the heat preservation structure comprises at least two heat preservation units, and the heat preservation units are annular and stacked to form a cylindrical heat preservation structure; a medium cavity is formed in each heat preservation unit and used for containing a gas heat preservation medium. The number of the circulating units is the same as that of the heat preservation units, the circulating units are in one-to-one correspondence with the heat preservation units, and the circulating units are correspondingly connected with one heat preservation unit; in the first stage of crystal growth, gas heat preservation media with the same content are injected into the medium cavities of all the heat preservation units; in the second crystal growth stage, the content of the gas heat preservation medium in the medium cavity is gradually reduced in the direction from bottom to top. The technical problem that the sapphire crystal growth quality is poor is solved, and the technical effect of improving the sapphire crystal growth quality is achieved.

The invention relates to the technical field of monocrystalline silicon manufacturing, provides a manufacturing method of a monocrystalline silicon rod and a silicon wafer, and at least facilitates the control of the resistivity uniformity of the monocrystalline silicon rod. The method comprises the steps that a test single crystal silicon rod is prepared, an initial doping concentration model is simulated according to the test single crystal silicon rod, and the initial doping concentration model is characterized in that in the equal-diameter process, the change trend of the concentration of a doping agent in the test single crystal silicon rod along with time is tested; the initial doping concentration model is optimized according to the target concentration interval to obtain a prediction model, the prediction model represents the variation trend of the concentration of the doping agent in the single crystal silicon rod along with time under the condition of multiple times of doping agent supplementation in the equal-diameter process, the prediction model comprises multiple concentration inflection points and multiple doping supplementation time points, and the concentration inflection points are different from the doping supplementation time points; each supplementary doping time point is correspondingly prior to a concentration inflection point; and preparing a target single crystal silicon rod, and in the equal-diameter process of preparing the target single crystal silicon rod, supplementing the dopant according to the supplementing time point.

The invention provides an edge-defined film-fed growth gallium oxide crystal interface deformation degree determination method and optimization method.The method comprises the steps that a target crystal interface is determined from a target computational domain, steady-state calculation is conducted on the target computational domain, and a temperature field where the target crystal interface is located is obtained; determining a target function corresponding to the target crystallization interface according to the temperature field; calculating a directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system; determining a temperature change factor of the target grid surface according to the three-dimensional coordinate and the directional derivative of the target grid surface in the three-dimensional rectangular coordinate system; and determining the deformation degree of the target crystal interface according to the temperature change factor of each target grid surface. According to the embodiment of the invention, the deformation degree of the target crystal interface is determined by taking the temperature change factor of each target grid surface as a judgment basis, the subjective judgment of observers is not depended on, and the accuracy and the automation degree of determining the deformation degree of the crystal interface are improved.

The invention belongs to the technical field of new energy materials, and discloses a fused salt auxiliary valence gradient doped modified single crystal positive electrode material and a preparation method and application thereof. The preparation method comprises the following steps: mixing a transition metal source, a lithium source, a manganese source and a molten salt auxiliary agent, sequentially carrying out first sintering and second sintering, and removing the molten salt auxiliary agent to obtain a doped modified single crystal positive electrode material precursor; and tempering the doped modified single-crystal positive electrode material precursor to obtain the fused salt auxiliary valence gradient doped modified single-crystal positive electrode material, the doped modified single crystal positive electrode material prepared by the invention can effectively avoid the capacity loss of the material, significantly reduce lattice mismatch in the lithium intercalation / deintercalation process, and relieve the volumetric strain in the charge-discharge process. Meanwhile, the formed M-O bond can enhance the structural stability of the material and inhibit the formation of microcracks of the material. The preparation method of the positive electrode material is convenient for industrial application, and provides a thought for commercial modification of the positive electrode material.

A differential lifting / lowering device for multiple circles of seed crystals and a method for the differential lifting / lowering of multiple circles of seed crystals. The device comprises: a seed crystal holding mechanism provided with multiple circles of holders for holding seed crystals; at least one lifting / lowering mechanism for driving at least one circle of holders to perform lifting / lowering motion; and a control device for controlling the speed of the at least one lifting / lowering mechanism on the basis of a diameter change obtained from the diameter of at least one crystal rob among crystal rods generated by the circles of seed crystals held by the seed crystal holding mechanism.

The invention relates to an integrated carbon / carbon composite material crucible containing an yttrium oxide coating, and belongs to the technical field of thermal field parts for monocrystalline silicon. The crucible comprises a carbon / carbon composite material crucible body, a glassy carbon coating and an yttrium oxide coating, the glassy carbon coating can effectively relieve thermal mismatch between the yttrium oxide coating and the carbon / carbon composite material crucible body, and carbon in the carbon / carbon composite material crucible body can be effectively prevented from escaping; impurities are not introduced into the yttrium oxide coating in the silicon melting process, so that the purity of a silicon material can be effectively ensured, and the yttrium oxide coating has excellent silicon erosion resistance and high-temperature stability; the carbon / carbon composite material crucible body is formed by densifying a carbon fiber prefabricated body which is formed by needling and laying a pure net tire for spraying resin, and the inner surface of the carbon / carbon composite material crucible body is a net tire which is wholly approximately isotropic, so that the overall mechanical strength of the crucible can be ensured, and a good combination effect with a subsequent functional coating can be ensured; and the service life of the crucible can be prolonged.

The high-frequency heating device includes at least a phase difference detector, a frequency controller, an inverter, and an LCR circuit, and the phase difference detector detects the phase difference between the high-frequency voltage generated by the frequency controller and the high-frequency current flowing through the LCR circuit, and the inverter updates the driving frequency of the high-frequency voltage based on the phase difference to control the current in the LCR circuit.

A flow guide tube apparatus for a single crystal furnace, a single crystal furnace and a single crystal silicon rod; the flow guide tube apparatus comprises a bottom surface that undulates in a wave-like manner along a radial direction, thereby guiding an inert gas in a manner that increases the flow rate of the inert gas.

The invention relates to an erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal as well as a preparation method and application thereof, and belongs to the field of nonlinear optical crystals. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal provided by the invention is prepared from Li2CO3, Nb2O5 and Er2O3 and / or Yb2O3 with the purity of 99.99%; wherein the atomic molar ratio of Li to Nb is 0.80-0.92, and the doping molar fraction of Er2O3, the doping molar fraction of Yb2O3 and the total doping molar fraction of Er2O3 and Yb2O3 are respectively 0.75%-1.25%. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal prepared by the invention is high in crystallization quality, large in doping concentration, uniform and transparent as a whole and free from obvious macroscopic defects, and can be used for preparing a high-quality lithium niobate bulk material and a submicron lithium niobate film so as to further prepare high-efficiency photoelectric functional devices such as a laser, an amplifier and a detector; and a foundation is laid for development of the fields of integrated photonics and the like.

The invention relates to the technical field of photovoltaic crystal growth, in particular to a method for improving the axial resistance uniformity of an antimony-doped silicon single crystal and the antimony-doped silicon single crystal. The method provided by the invention comprises the following steps: growing the antimony-doped silicon single crystal by adopting a czochralski method, and at an equal-diameter stage, controlling the furnace pressure to be 4-13torr; in the czochralski method, after leading and releasing are failed or growth of a single antimony-doped silicon single crystal is completed, supplemental doping of an antimony element is carried out according to the volatilization amount of the antimony element. In the method disclosed by the invention, the tail resistance and the head resistance of the prepared antimony-doped silicon single crystal are kept highly consistent by controlling the furnace pressure at the equal-diameter stage, regulating and controlling the volatilization rate of the antimony element, combining the segregation phenomenon of the antimony element in silicon and determining the supplementary doping time of the antimony element.