415results about How to "Avoid roughness" patented technology

There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms/cm<3 >and not more than 1.5x10<18 >atoms/cm<3>, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms/cm<3 >and not more than 1.5x10<18 >atoms/cm<3 >is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

The present invention has an object to provide an external dermatological formulation having satisfactory blood flow-promoting effect, antiinflammatory effect, antibacterial effect, moisturizing effect, whitening effect, UV-absorbing effect, UV-scattering effect, antioxidant effect, hair growing effect, hair nourishing effect, emusifying effect, astringent effect, wrinkle-reducing effect, cell-activating effect and/or transdermal absorption-promoting effect with a satisfactory safety and skin feeling; The object is solved by providing an external dermatological formulation comprising a saccharide derivative of α,α-trehalose and one or more members selected from substances having any one of blood flow-promoting effect, antiinflammatory effect, antibacterial effect, moisturizing effect, whitening effect, UV-absorbing effect, UV-scattering effect, antioxidant effect, hair growing efect, hair nourishing effect, emulsifying effect, astringent effect, wrinkle-reducing effect, cell-activating effect and transdermal absorption-promoting effect.

This invention relates to a method for controlling a bi-level apparatus. The method includes repeatedly measuring an airflow, choosing an expiration threshold value and choosing an inspiration threshold value. Switching to an inspiration mode takes place if the airflow is greater than the expiration threshold value in a comparison with the expiration threshold value. A switching back to the expiration mode takes place if the airflow is smaller than the inspiration threshold value in a comparison with the inspiration threshold value. Moreover, the invention relates to a bi-level apparatus for performing the method.

An ink jet recording apparatus includes a conveying device for conveying a recording medium to a recording area where ink is jetted, and a plurality of recording heads for jetting ink onto the recording medium, wherein the plurality of recording heads includes a background-color ink recording head for jetting a background-color ink, process-color ink recording heads for jetting process-color inks in respective process colors, and a transparent ink recording head for jetting a transparent ink, and wherein the background-color ink recording head is disposed on a most upstream side in a conveying direction of the recording medium, and the transparent ink recording head is disposed on a most downstream side in the conveying direction of the recording medium.

A semiconductor structure including at least one transistor located on a surface of a semiconductor substrate, wherein the at least one transistor has a sub-lithographic channel length, is provided. Also provided is a method to form such a semiconductor structure using self-assembling block copolymer that can be placed at a specific location using a pre-fabricated hard mask pattern.

The invention discloses whitening and freckle-removing cream which comprises water, hydrogenated polydecene, butanediol, glycerol, ethylhexyl palmitate, isopropyl palmitate, ceteareth-25, ceteareth-6,C12-15 alcohol-benzene formic ester, cetostearyl alcohol, polydimethylsiloxane, magnesium ascorbyl phosphate, simmondsia chinensis seed oil, preservatives, tocopheryl acetate, arbutin, xanthan gum, bisabolol, allantoin, essence, EDTA (ethylene diamine tetraacetic acid) disodium, glycyrrhiza glabra root extracts, sodium hyaluronate and citric acid. Whitening active components such as the glycyrrhiza glabra root extracts, the magnesium ascorbyl phosphate and the arbutin are added in a formula, the whitening and freckle-removing cream can penetrate into skin bottoms, melanogenesis is continuously inhibited, melanin decomposition is accelerated, skins are thoroughly whitened from inside to outside, and rapid whitening and freckle-removing effects are achieved. The magnesium ascorbyl phosphateand vitamin E achieve synergistic effects, and the whitening and freckle-removing effects are better.

A III-V group nitride system semiconductor substrate has III-V group nitride system single crystal grown on a hetero-substrate. The III-V group nitride system semiconductor substrate has a flat surface and satisfies the relationship of θ>α, where θ [deg] is given as an average in angles of the substrate surface to low index surfaces closest to the substrate surface measured at a plurality of arbitrary points in plane of the substrate, and a variation range of the measured angles to θ is represented by ±α [deg].

The invention discloses a production method of a high-strength, high-conductivity and heat-resistant copper alloy, and belongs to the technical field of copper alloy machining. Accoding to the production method of high-strength, high-conductivity and heat-resistant copper alloy, the inner liner of a crystallizer adopted in the upper-induced continuous casting process is a carbon-carbon composite material so as to ensure the lubrication, high heat conduction and high temperature resistance properties; the temperature of the upper-induced continuous casting is 1180-1230 DEG C, the casting temperature is low so that the problem that molten liquid in the crystallizer is difficult to solidify and the crystallizer inner liner is worn during casting can be effectively avoided; the pressure of protective gas nitrogen in the liquid surface of an upper-induced furnace is controlled to be 0.2-0.7 atmosphere, so that the phenomenon of solid-liquid interface separation in the crystallizer is avoided, and a copper-chromium alloy product with larger weight and length is produced; according to the production method of the high-strength, high-conductivity and heat-resistant copper alloy, the cheapelement (Mg) is used for replacing the rare noble metal, and the mechanical property and the softening resistance property of the copper-chromium alloy are improved; and the production method is a non-vacuum and short-process preparation technology, the cost is low, and the production method is suitable for large-scale industrial production and has important economic and social significances.

An electronic component having: a substrate, a lower conductor layer provided on the substrate; an inorganic dielectric film that covers the lower conductor layer; and an upper conductor layer having an upper electrode portion provided on the inorganic dielectric film. The lower conductor layer has a lower electrode portion that together with the upper electrode portion and the inorganic dielectric film constitutes a capacitor, and a coil portion that constitutes an inductor. The entire inorganic dielectric film is formed integrally, and the lower conductor layer is in contact only with the substrate, inorganic dielectric film, and upper conductor layer.

The object of the present invention is to provide a face wash which effectively removes pore stains and aged horny layers of the skin and gives whitening effect but has lesser stimulant feel. The present invention solves the object by providing a face wash comprising a protein-degrading enzyme, lipid-degrading enzyme, trehalose, D-glucose, and ascorbic acid and/or a derivative thereof as effective ingredients.

A process prevents a reduction in the strength of the joint between the liner components, and assures high productivity without impairment. The peripheral walls (6, 7) of the liner component (4) and each of the second liner components (5) are brought into contact with each other, a probe (22) of friction agitation joining tool (20) is placed into the two liner components across the contact portions thereof, and the probe (22) in rotation is thereafter moved relative to the two liner components (4, 5). Assuming that the number of revolutions of the probe (22) is R rpm and that the speed of joining of the two liner components (4, 5) is V mm/min, R/V is in the range of 2≦R/V≦12.

A leash assembly having a strap or leash that can be winded off or winded up for walking animals. The assembly has a handle and a housing attached thereto in which the strap is arranged on a turnable roller device for being wound up or wound off. The assembly also includes a brake key that can stop and prevent rotation of the roller device to restrict a part of the strap extending externally of the housing to a desired length. In addition, the assembly includes an exit opening through which the strap extends externally of the housing. Preferably, the exit opening is formed as a slit, and the slit has a central region along its longitudinal extension that has an enlarged opening portion extending laterally from at least one side of the slit.

The invention discloses a tail-cover-free embedding process of an electric connector and a testing method. According to a mould designed in the invention, glue injection is carried out from the bottom of the mould, and exhaust holes arranged at two sides of a wire hole are used for exhaust. Bubble-free embedding of the electric connector is realized, so that the requirement of insulativity of the electric connector is satisfied, and the quality of embedding is improved. The material of the mould is polytetrafluoroethylene, thereby reducing production cost of the mould. During embedding, demoulding is directly performed without coating of a releasing agent, so that a rough surface, due to uneven coating of the releasing agent, of an embedded body is prevented. According to the tail-cover-free embedding process adopted in the invention, the problem above is overcome; weight reduction is realized; tedious processing of the tail cover in the prior art is eliminated; and the reliability of a cable network is improved.

In a production process for a semiconductor device employing an SiC semiconductor substrate (1), the SiC semiconductor substrate (1) is mounted on a susceptor (23), and a C heating member (3) of carbon is placed on a surface of the SiC semiconductor substrate (1). An annealing process is performed to form an impurity region in the surface of the SiC semiconductor substrate (1) by causing the susceptor (23) and the C heating member (3) to generate heat at high temperatures.

A method of manufacturing a semiconductor device having a silicon substrate containing an impurity diffusion layer is disclosed, that comprises the steps of doping impurities to the silicon substrate through a silicon oxide film with a thickness of 2.5 nm or less at an accelerating voltage of 3 keV or less, the silicon oxide film being formed on the silicon substrate and annealing the silicon substrate with the oxide film left.

The invention discloses a method for preparing a Bi high temperature superconducting line or strip material. The method comprises the following steps: firstly, preparing a primary composite body; secondly, drawing the primary composite body, and then annealing the drawn primary composite body so as to obtain a line material; thirdly, bundling a plurality of line materials, and then packing into a silver-base alloy pipe so as to prepare a secondary composite body; fourthly, drawing the secondary composite body, and then annealing the drawn secondary composite body so as to obtain a Bi line material; and fifthly, putting the Bi line material into an atmosphere furnace for heat treatment so as to obtain the Bi high temperature superconducting line material; or rolling the Bi line material into a Bi strip material, and then putting into the atmosphere furnace for heat treatment so as to obtain the Bi high temperature superconducting strip material. According to the method, the manufacturing dislocation quantity of silver and silver-manganese alloy is effectively controlled by adopting an unconventional annealing process, so that the phenomenon that a silver super interface is severely rough caused by an excessively soft silver sheath is effectively avoided, and the current-carrying performance of the Bi line or strip material is improved.